CN102122936A - Aluminum nitride piezoelectric membrane for surface acoustic wave (SAW) device and preparation method thereof - Google Patents
Aluminum nitride piezoelectric membrane for surface acoustic wave (SAW) device and preparation method thereof Download PDFInfo
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- CN102122936A CN102122936A CN2011100878510A CN201110087851A CN102122936A CN 102122936 A CN102122936 A CN 102122936A CN 2011100878510 A CN2011100878510 A CN 2011100878510A CN 201110087851 A CN201110087851 A CN 201110087851A CN 102122936 A CN102122936 A CN 102122936A
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Abstract
The invention discloses an aluminum nitride (AlN) piezoelectric membrane for a surface acoustic wave (SAW) device, which is formed by a diamond substrate and a layer of aluminum nitride membrane formed on the surface of the substrate. The aluminum nitride membrane is a nano membrane with the thickness of 0.6-0.7 mu m. A preparation method of the aluminum nitride piezoelectric membrane for the SAW device comprises the followings steps of: performing plasma cleaning on the surface of the diamond substrate in a sample introduction chamber of a metal organic chemical vapor deposition (MOCVD) system; and then depositing a layer of aluminum nitride membrane on the surface of the diamond substrate by a magnetron sputtering technology. The invention has the advantages that: the AlN piezoelectric membrane for the high-performance SAW device is provided; the SAW device prepared from the AlN piezoelectric membrane has a high frequency (more than or equal to 2.5GHz) and can bear high power (more than or equal to 37dBm); and the SAW device can meet the requirement of high-frequency and/or high power mobile communication. The conditions of the preparation method of the piezoelectric membrane are convenient and easy, and the preparation method is favorable for large-scale popularization and application, and has production and practice significance.
Description
Technical field
The present invention relates to the SAW (Surface Acoustic Wave) device technical field, particularly relate to a kind of aluminum nitride piezoelectric film that is used for SAW (Surface Acoustic Wave) device and preparation method thereof.
Background technology
In recent years, mobile communication rapid development makes radio communication frequency bands become a limited and valuable natural resources.For mobile communication system, the frequency band that is lower than 1GHz has been taken (first generation digital system); The frequency of second generation digital system from 900 MHz to 1.9 GHz; In third generation digital system, global roaming trip trip frequency range is GHz l.8～2.2, global position system (GPS) frequency is 1.575 GHz, the applying frequency scope of the new satellite communication of Low Earth Orbit (LEO) is 1.6GHz～2.5GHz, therefore, the applying frequency of present mobile communication system is more and more higher, be badly in need of surface acoustic wave (SAW) filter of high frequency, and, move logical moving communicator and all require the try one's best miniaturization and have bigger power bearing ability of surface acoustic wave SAW filter.
Conventional SAW material is as quartzy, lithium niobate LiNbO
3, zinc oxide ZnO etc., the surface acoustic wave phase velocity is lower, generally be lower than 4000m/s, making frequency with it is the SAW device of 2.5GHz, its interdigital transducer (IDT) finger beam d must be less than 0.4 μ m, frequency is that the pairing IDT finger beam of the SAW device d of 5GHz is less than 0.2 μ m, approached the limit of present semi-conductor industry level, variety of issue such as therefore can run into aborning that for example severed finger is serious, poor reliability, rate of finished products are low, cost an arm and a leg, thus the further raising of SAW device frequency seriously restricted; And, the transmitting terminal of mobile communication system (TX) filter is to high-power signal filtering, thin IDT finger beam d like this, resistance is bigger, can produce a large amount of burn-offs, the thermal conductivity of adding these conventional SAW materials is low, so can't bear high-powerly, this makes the SAW device of being made by above-mentioned conventional SAW material be difficult to satisfy the requirement of high-frequency and/or high-power mobile communication.
Therefore, press at present and develop a kind of piezoelectric membrane, be used to prepare the frequency height, and can bear powerful SAW device, can satisfy the requirement of high-frequency and/or high-power mobile communication.
Summary of the invention
The objective of the invention is: for overcoming the deficiencies in the prior art, a kind of aluminium nitride (AlN) piezoelectric membrane that is used for SAW (Surface Acoustic Wave) device is provided, with the SAW device frequency height of its preparation, and can bear high-powerly, can satisfy the requirement of high-frequency and/or high-power mobile communication; In addition, the present invention also provides a kind of preparation method who is used for the AlN piezoelectric membrane of SAW (Surface Acoustic Wave) device, and these preparation method's process conditions are convenient and easy, help applying on a large scale, are of great practical significance.
Technical scheme of the present invention:
A kind of aluminum nitride piezoelectric film that is used for SAW (Surface Acoustic Wave) device, one deck aluminium nitride film that is formed by diamond substrate and this substrate surface constitutes, and described aluminium nitride film is that thickness is the nano thin-film of 0.6-0.7 μ m.
A kind of described preparation method who is used for the aluminum nitride piezoelectric film of SAW (Surface Acoustic Wave) device may further comprise the steps:
1) at the Sample Room of MOCVD depositing system, plasma clean is carried out on the diamond substrate surface;
2), adopt magnetron sputtering technique at diamond substrate surface deposition one deck aluminium nitride film in the settling chamber of MOCVD depositing system.
Describedly the surface plasma cleaning method is carried out on the diamond substrate surface be: at the Sample Room of MOCVD depositing system, diamond substrate is carried out plasma treatment in the mist atmosphere of argon gas and nitrogen, the mass flow ratio of argon gas and nitrogen is that the filament voltage of 20:4, plasma clean power supply is that 60-80V, accelerating voltage are 80-120V.
Described magnetron sputtering technique parameter at diamond substrate surface deposition one deck aluminium nitride film is: base vacuum degree 3 * 10
-4Pa, substrate rotating platform rotating speed 30Hz, plasma source power 100W, N
2Flow 300sccm, NH
3Flow 30sccm, operating pressure 5.5 Torr, underlayer temperature 700-1000 ℃, 21.5 ℃ of Al source temperatures, carrier gas H
2Flow 65sccm, sedimentation time 1-2 hour.
Principle analysis of the present invention:
In order to satisfy the requirement of high-frequency and/or high-power mobile communication, must select for use the high velocity of sound, high elastic modulus, high heat conductance, low-density material to prepare the SAW device.In all material, adamantine modulus of elasticity the highest (elastic modulus E=1200Gpa), the lower (ρ=3.51 g/cm of density
3), thereby has the velocity of sound the highest in all substances, multilayer film SAW device with its making, IDT finger beam d be 2.5 times of the same frequency conventional material (for example, frequency is that the finger beam d of the SAW device correspondence of 2.5GHz can be greater than 1 μ m, frequency is that the finger beam d of the SAW device correspondence of 5GHz can be greater than 0.5 μ m), and resistance has only 2/5 of conventional material, the burn-off of the consumption that produces also has only 2/5 of conventional material, it is the highest in all material to add adamantine thermal conductivity, make diamond thin become high-frequency, high-power SAW device, i.e. optimal high-sound-velocity material in " piezoelectric membrane/high velocity of sound film " multilayer film surface acoustic wave SAW device.The performance of SAW device is then determined jointly by piezoelectric membrane and diamond substrate.
In " piezoelectric membrane/high velocity of sound film " multilayer film SAW device architecture, high velocity of sound film is used for propagating surface acoustic wave, and piezoelectric crystalline film is used for realizing the power conversion of electromagnetic wave and surface acoustic wave.III-V compounds of group film III-N(such as AlN, h-BN) in " piezoelectric membrane/diamond thin " multi-layer film structure, be used as piezoelectric membrane, realize the power conversion of electromagnetic wave and surface acoustic wave.
Aluminium nitride AlN phase velocity height, material temperature coefficient are approximately zero, can be used as piezoelectric membrane suitable in the SAW device.AlN phase speed ratio zinc oxide ZnO and lithium niobate LiNbO
3Height, therefore, the phase velocity of " AlN/ diamond " structure SAW device should be higher than " ZnO/ diamond " and " LiNbO
3/ diamond " phase velocity of structure SAW device.Like this, when interdigital transducer finger beam d was identical, it is higher that the frequency of SAW device can reach; Bigger and the adamantine phase velocity difference of the phase velocity of AlN is also less, thereby has reduced the speed frequency dispersion of this structure greatly, and promptly phase velocity is very little with the different variations of frequency; The temperature coefficient of diamond and AlN film is all very little, is approximately zero, and therefore, when the SAW device temperature raise, the centre frequency of SAW device was drifted about very little with the temperature rising.
Advantage of the present invention is: compared with prior art, the invention provides a kind of AlN piezoelectric membrane that is used for high-performance surface acoustic wave (SAW) device, SAW device frequency height (〉=2.5 GHz) with its preparation, and can bear high-power (〉=37dBm), can satisfy the requirement of high-frequency and/or high-power mobile communication, in addition, the present invention also provides a kind of preparation method who is used for the AlN piezoelectric membrane of high-performance surface acoustic wave (SAW) device, these preparation method's process conditions are convenient and easy, help applying on a large scale, be of great practical significance.
Description of drawings
Accompanying drawing is on the diamond thin substrate during physical sputtering depositing Al N, the displayed map of Fourier transformation infrared spectrometer FTIR.
Embodiment
In order to make those skilled in the art person understand the present invention program better, the present invention is described in further detail below in conjunction with drawings and embodiments.
Embodiment 1:
1) surface plasma being carried out on the diamond substrate surface cleans
At the Sample Room of MOCVD depositing system, diamond substrate is carried out plasma treatment in the mist atmosphere of argon gas and nitrogen, and the mass flow ratio of argon gas and nitrogen is that the filament voltage of 20:4, plasma clean power supply is that 65V, accelerating voltage are 110V.This processing has guaranteed the cleaning of sample surfaces and the reliability of technology, the film of deposition and the bond strength between substrate have subsequently also been strengthened simultaneously, and the chemical combination of nitrogen Al and N when the preliminary treatment of substrate surface is helped depositing Al N film subsequently, thereby help the AlN film of depositing high-quality.
2) sputtering sedimentation AlN film on diamond substrate
In the settling chamber of MOCVD depositing system, adopt MOCVD technology at diamond substrate surface deposition one deck aluminium nitride film, the Al source is trimethyl indium (TMAl), the N source is ammonia (NH
3), the MOCVD technological parameter is: base vacuum degree 3 * 10
-4Pa, substrate rotating platform rotating speed 30Hz, plasma source power 100W, N
2Flow 300sccm, NH
3Flow 30sccm, operating pressure 5.5 Torr, 830 ℃ of underlayer temperatures, 20 ℃ of Al source temperatures, carrier gas H
2Flow 65sccm, sedimentation time 1 hour.Formed nanometer AlN film thickness is 0.62 μ m.
Accompanying drawing is on the diamond thin substrate during physical sputtering depositing Al N, the displayed map of Fourier transformation infrared spectrometer FTIR.Show among the figure: in wave number is 670cm
-1Near the absworption peak of AlN is arranged.
Embodiment 2:
1) surface plasma being carried out on the diamond substrate surface cleans
At the Sample Room of MOCVD depositing system, diamond substrate is carried out plasma treatment in the mist atmosphere of argon gas and nitrogen, and the mass flow ratio of argon gas and nitrogen is that the filament voltage of 20:4, plasma clean power supply is that 80V, accelerating voltage are 90V.This processing has guaranteed the cleaning of sample surfaces and the reliability of technology, the film of deposition and the bond strength between substrate have subsequently also been strengthened simultaneously, and the chemical combination of nitrogen Al and N when the preliminary treatment of substrate surface is helped depositing Al N film subsequently, thereby help the AlN film of depositing high-quality.
2) sputtering sedimentation AlN film on diamond substrate
In the settling chamber of MOCVD depositing system, adopt MOCVD technology at diamond substrate surface deposition one deck aluminium nitride film, the Al source is trimethyl indium (TMAl), the N source is ammonia (NH
3), the MOCVD technological parameter is: base vacuum degree 3 * 10
-4Pa, substrate rotating platform rotating speed 30Hz, plasma source power 100W, N
2Flow 300sccm, NH
3Flow 30sccm, operating pressure 5.0 Torr, 900 ℃ of underlayer temperatures, 21.5 ℃ of Al source temperatures, carrier gas H
2Flow 60sccm, sedimentation time 90 minutes.Formed nanometer AlN film thickness is 0.7 μ m.
In sum, compared with prior art, the invention provides a kind of AlN piezoelectric membrane that is used for high-performance surface acoustic wave (SAW) device, SAW device frequency height with its preparation, and can bear high-power, can satisfy the requirement of high-frequency and/or high-power mobile communication, in addition, the present invention also provides a kind of preparation method who is used for the AlN piezoelectric membrane of high-performance surface acoustic wave (SAW) device, these preparation method's process conditions are convenient and easy, help applying on a large scale, be of great practical significance.
The above only is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (4)
1. aluminum nitride piezoelectric film that is used for SAW (Surface Acoustic Wave) device is characterized in that: one deck aluminium nitride film that is formed by diamond substrate and this substrate surface constitutes, and described aluminium nitride film is that thickness is the nano thin-film of 0.6-0.7 μ m.
2. preparation method who is used for the aluminum nitride piezoelectric film of SAW (Surface Acoustic Wave) device according to claim 1 is characterized in that may further comprise the steps:
1) at the Sample Room of MOCVD depositing system, plasma clean is carried out on the diamond substrate surface;
2), adopt magnetron sputtering technique at diamond substrate surface deposition one deck aluminium nitride film in the settling chamber of MOCVD depositing system.
3. according to the described preparation method who is used for the aluminum nitride piezoelectric film of SAW (Surface Acoustic Wave) device of claim 2, it is characterized in that: describedly the surface plasma cleaning method is carried out on the diamond substrate surface be: at the Sample Room of MOCVD depositing system, diamond substrate is carried out plasma treatment in the mist atmosphere of argon gas and nitrogen, the mass flow ratio of argon gas and nitrogen is that the filament voltage of 20:4, plasma clean power supply is that 60-80V, accelerating voltage are 80-120V.
4. according to the described preparation method who is used for the aluminum nitride piezoelectric film of SAW (Surface Acoustic Wave) device of claim 2, it is characterized in that: described magnetron sputtering technique parameter at diamond substrate surface deposition one deck aluminium nitride film is: base vacuum degree 3 * 10
-4Pa, substrate rotating platform rotating speed 30Hz, plasma source power 100W, N
2Flow 300sccm, NH
3Flow 30sccm, operating pressure 5.5 Torr, underlayer temperature 700-1000 ℃, 21.5 ℃ of Al source temperatures, carrier gas H
2Flow 65sccm, sedimentation time 1-2 hour.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102611404A (en) * | 2012-03-09 | 2012-07-25 | 天津理工大学 | Hexagonal boron-nitride piezoelectric film for SAW (Surface Acoustic Wave) device and manufacturing method thereof |
| CN102778509A (en) * | 2012-08-17 | 2012-11-14 | 天津理工大学 | SAW (surface acoustic wave) gas sensor substrate |
| US9484198B1 (en) | 2014-04-25 | 2016-11-01 | Ming Chi University Of Technology | Physical vapor deposition of an aluminum nitride film |
| WO2021134606A1 (en) * | 2019-12-31 | 2021-07-08 | Applied Materials, Inc. | Method and apparatus for deposition of piezo-electric materials |
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|---|---|---|---|---|
| CN102611404A (en) * | 2012-03-09 | 2012-07-25 | 天津理工大学 | Hexagonal boron-nitride piezoelectric film for SAW (Surface Acoustic Wave) device and manufacturing method thereof |
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| US9484198B1 (en) | 2014-04-25 | 2016-11-01 | Ming Chi University Of Technology | Physical vapor deposition of an aluminum nitride film |
| WO2021134606A1 (en) * | 2019-12-31 | 2021-07-08 | Applied Materials, Inc. | Method and apparatus for deposition of piezo-electric materials |
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Application publication date: 20110713 |