CN101323971A - Method for preparing high quality ZnO film using cushioning layer - Google Patents
Method for preparing high quality ZnO film using cushioning layer Download PDFInfo
- Publication number
- CN101323971A CN101323971A CNA2008100406397A CN200810040639A CN101323971A CN 101323971 A CN101323971 A CN 101323971A CN A2008100406397 A CNA2008100406397 A CN A2008100406397A CN 200810040639 A CN200810040639 A CN 200810040639A CN 101323971 A CN101323971 A CN 101323971A
- Authority
- CN
- China
- Prior art keywords
- film
- zno
- substrate
- minutes
- acetone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to a method that prepares a high-quality ZnO film by utilizing a buffer layer, which comprises following main steps: a silicon substrate is preprocessed and placed into a reaction chamber of a hot filament chemical vapor depositing device as a deposited substrate; nucleation and growth of a diamond film are implemented in mixed reaction gases of hydrogen and acetone, and the silicon substrate is soaked and rusted in a mixed solution of HNO3 and HF, thus forming the self-supporting diamond film; the ZnO film is prepared on the self-supporting diamond film by the direct current magnetron sputtering method, the ZnO buffer layer is firstly sputtered and deposited in Ar and O2, and then a ZnO main layer is deposited. The method that prepares the high-quality ZnO film has simplified techniques and low cost and is favor for promoting large-scale application of high-quality ZnO film devices. The produced ZnO film has small crystal grain size, high crystal quality and low surface roughness.
Description
Technical field
The present invention relates to a kind of method of utilizing buffer layer to prepare high quality ZnO film, belong to ceramic manufacturing process field.
Background technology
Development along with third generation mechanics of communication, the frequency of utilization of surface acoustic wave (SAW) device improves constantly, develop into present several GHz from initial several MHz, as be applied to the personal communication services (PCS) system of 1.9GHz, the WLAN system of 2.4GHz and be higher than the wireless multiterminal transmitting system of 5GHz.The continuous development of these frequency applications systems has enlarged markedly the market requirement of high-frequency sound surface wave device.And traditional SAW material velocity of sound is low, is usually less than 4000m/s, only can prepare the low relatively device of frequency.
Diamond tool acoustic wave propagation velocity is the fastest in all material, and therefore, under the identical condition of state of the art, diamond can be prepared the device of upper frequency.Meanwhile diamond has electricity, light, heat and mechanical property and high anti-irradiation intensity and physical and chemical stability etc. of many excellences.As low-k (5.7), high-breakdown-voltage (10
7V/cm), high electronics, hole mobility (are respectively 1800cm
2/ VS and 1200cm
2/ VS), high heat conductance (20W/cmK).Even these unique performances make device be in rugged environments such as high temperature, severe radiation, work that also can safety and stability under the situation of no any protection.Therefore the surface acoustic wave device that with the diamond is substrate has received increasing concern.But, because diamond itself is not a piezoelectric, can't excite and the receiving surface ripple, therefore need deposit one deck piezoelectric membrane in the above makes multiwalled film SAW device.
ZnO is as a kind of piezoelectric, and it has stronger electromechanical coupling factor, it is had on ultrasonic transducer, Bragg inflector, frequency spectrum analyser, high frequency filter, high-speed optical switch and micromechanics quite widely use.These devices are intercepted at wavelength-division multiplex, fiber phase modulation, the dynamic frequency measurement of counter radar, the electronics of large vol, two-forty opticfiber communication, satellite mobile communication, parallel optical information processing etc. are civilian and application of military field is also very extensive.Along with the increase of development of Communication Technique and communication flows, hasten towards saturation in the lower frequency traffic, make communication frequency develop to high frequency, mobile communication also requires to have higher frequency simultaneously.In being higher than the range of frequency of 1.5GHz, having the constant low-loss high frequency wave filter becomes one of most critical parts of mobile communication system.And ZnO is the preferred material of making this high-frequency surface acoustic wave device.
At present, the preparation of the surface acoustic wave device of ZnO/diamond structure still is in development.The used diamond thin of SAW device must have high nucleation density, low surface roughness and high duplication, particularly to high frequency SAW device, require very smooth diamond surface to come the IDT electrode pattern of etching submicron, could must improve device so to greatest extent and get frequency and reduce to insert loss.
Solve at present diamond thin planarization problem and mainly contain following method: 1. mechanical polishing diamond surface.This method just is used at present, but the polishing difficulty is big and time-consuming; 2. growing nano polycrystalline diamond (NCD).This method has certain feasibility, but surface impedance is not suitable for directly making IDT at diamond surface.
Can see that thus traditional method all is to be prerequisite with the aufwuchsplate that adopts diamond thin.But the nucleation face of test discovery diamond thin is the knot of diamond and Si substrate touches face, has well shone upon the configuration of surface of Si substrate.The diamond grain size of the self-supporting diamond thin film nucleation face of employing minute surface Si substrate growth also is in the nano level of nucleation stage, so surfaceness is quite low.Therefore adopt the platform of free-standing diamond film nucleation face, can all reach a higher standard aspect surfaceness and the film quality, and guarantee film thickness, satisfy of the requirement of SAW device the diamond thin substrate as growing ZnO thin-film.
The used piezoelectric membrane of SAW device requires to have the c axle orientation of height simultaneously, and the profile pattern of height also will have higher resistivity and piezoelectricity, could improve the frequency of device so to greatest extent and reduce to insert loss.There are the crystal grain of nothing orientation and the performance that other defect all will reduce device in the film, increase and insert loss.As the defect scattering meeting scattered sound waves on surface, generate energy loss; Except the influence on surface, crystal boundary and room also can produce similar scattering and power loss, when the size of crystal grain and wave length of sound during at the same order of magnitude scattering particularly serious.Therefore, control piezoelectric membrane ZnO surface and inner microstructure characteristic also are very crucial to making low device and the optimized device performance of decreasing of high frequency.Be to improve the ZnO film performance, the present invention introduces the process of growth of ZnO film with homogeneous buffer layer, and the thin layer that this performance is good especially provides film growth and relaxes internal stress and template action, makes high performance ZnO film be produced out.
Summary of the invention
The purpose of this invention is to provide a kind of method of utilizing buffer layer to prepare high quality ZnO film.
The objective of the invention is to be achieved through the following technical solutions.
A kind of method of utilizing buffer layer to prepare high quality ZnO film is characterized in that this technology has following process and step:
(1) preparation of self-supporting diamond thin film:
With the Si sheet is substrate, adopts heated filament CVD legal system to be equipped with diamond thin.Adopt the method for chemical degradation to remove the Si substrate then, obtain self-supporting diamond thin film.
(1) tantalum wire pre-treatment:
Adopt tantalum wire as heating source in hot-wire chemical gas-phase deposition (HFCVD) method, but often there are zone of oxidation and other impurity in the surface of tantalum wire, and tantalum be heated after also volatilization easily, can cause pollution as direct use, so be very necessary to the pre-treatment of tantalum wire to substrate.Earlier the tantalum wire surface finish is clean with rubber, vacuumize finish after, feed hydrogen and acetone to 4～6KPa then, wherein the ratio of hydrogen and acetone is 1: 1～5: 1, is heated to 420～450 ℃ of left and right sides pre-treatment 20～30 minutes.So not only removed the zone of oxidation impurity on tantalum wire surface, also formed one deck carbide tectum,, reduced the introducing of impurity to suppress the volatilization of tantalum in the subsequent process on the tantalum wire surface.
(2) substrate and pre-treatment thereof
Among the present invention, the growth of diamond film is a substrate with p type 1cm * 1cm silicon chip, and with its minute surface as the diamond film face, purpose is in order to reduce the diamond surface roughness.Before the growth, silicon substrate must its objective is and remove the silicon surface oxidation layer through the pre-treatment of certain step, clean surface, and suitably increase the diamond nucleation center of substrate surface.
Adopt the novel method of ultra-fine adamantine stone flour hand lapping: promptly place HF solution 5～10 minutes earlier to remove the Si surface oxide layer, be the ultra-fine adamantine stone flour of 100nm and the hand lapping of glycerine mixed solution 10～15 minutes with granularity then, must be noted that dynamics and homogeneity during grinding, avoid forming too dark cut.After finishing, grinding place the acetone soln ultra sonic bath to clean 10～15 minutes substrate, to remove the substrate surface greasy dirt, place deionized water for ultrasonic to bathe then and cleaned 10～15 minutes, repeat above-mentioned cleaning step 3～5 times, very clean until the surface, take out the substrate oven dry at last.
(3) deposition of diamond film
After tantalum wire pre-treatment and substrate pre-treatment are finished, silicon chip is placed on the sample bench, minute surface upwards carries out the deposition of diamond film then, and its operation steps is as follows successively:
(a) vacuumize: utilize vacuum pump successively reaction chamber, hydrogen branch road and acetone branch road to be vacuumized, finally make reaction chamber base vacuum＜5Pa;
(b) gas flow, air pressure adjustment: vacuumize finish after, open mass flowmeter successively and feed hydrogen and acetone, the ratio of hydrogen and acetone is 1: 1～5: 1, again by the adjusting reducing valve with the stable gas pressure of reaction chamber at design load 0.8～1.5Pa;
(c) heat up: after the stable gas pressure, open water coolant and heater voltage, and, finally make temperature of reaction be in 580～620 ℃, add bias current 4A, nucleation 30 minutes with the speed rising heater voltage of about 1/2V/min;
(d) cooling: kept processing condition 80～120 hours, and stopped to feed acetone, and reduce voltage to reduce temperature of reaction, close hydrogen and water coolant at last, take out sample until room temperature with the speed of about 1/3V/min;
(4) silicon substrate is peeled off
In order to obtain free-standing diamond film, after above-mentioned processing finishes, the diamond thin with very big thickness for preparing is placed HF and HNO
3Volumetric molar concentration is in 1: 1 the solution, at room temperature to corrode 10～15 hours, treats can obtain required self-supporting shape diamond thin after the dissolving of Si substrate;
(2) direct current magnetron sputtering process prepares ZnO film
In general, form good reproducibility, defective is few, piezoelectric property is good ZnO film and be not easy, the nothing orientation crystal grain that exists in the film, surface imperfection, crystal boundary, rooms etc. all can produce detrimentally affect to device performance.Introduce the ZnO homogeneous buffer layer to relaxing the stress between film and substrate, the film that obtains good crystallinity, excellent property plays a part very big.
Among the present invention, adopt dc reactive magnetron sputtering technique to prepare ZnO film, and with self-supporting diamond as substrate, target is 99.99% metallic zinc target.In the deposition process, hydrogen (Ar) is sputter gas, oxygen (O
2) be reactant gases.
(1) self-supporting diamond thin film surface cleaning
For eliminating the influence of surperficial dirt and particulate to thin film deposition, place diamond substrate the acetone ultra sonic bath to clean 10～15 minutes earlier, place deionized water for ultrasonic bathe to clean then 10～15 minutes, it is very clean until the surface to repeat above-mentioned cleaning step 3～5 times, takes out the substrate oven dry at last.
(2) preparation ZnO buffer layer on self-supporting diamond thin film
The self-supporting diamond substrate is fixed in the magnetron sputtering cavity, and minute surface is downward, carries out the deposition of ZnO film then, and its operation steps is as follows successively:
(a) vacuumize: utilize unit contruction pump reaction chamber, Ar gas and O
2Feed channel vacuumizes, and finally makes reaction chamber base vacuum＜5Pa; Utilize molecular pump that reaction chamber is vacuumized, finally make reaction chamber base vacuum＜3 * 10
-3Pa
(b) starter: vacuumize finish after, open the Ar mass flowmeter and feed Ar gas, and regulate flow＞150sccm (standard-state cubic centimeter per minute mark condition milliliter per minute), open the constant-current source starter.
(c) gas flow, operating air pressure is regulated: after treating that the aura district is stable, feed O
2Gas is regulated Ar, O
2Throughput ratio Ar: O
2Between 1: 1～1: 3, regulate operating air pressure 0.2～0.9Pa.
(d) adjustment of sputtering power: adjust sputtering power 50～100W, treat each parameter stability after, kept sputtering time 20～60 minutes, deposition ZnO buffer layer.
(3) deposition of ZnO main stor(e)y
After the preparation of ZnO buffer layer finishes, adjustments of gas Flow-rate adjustment Ar, O
2Throughput ratio Ar: O
2Between 1: 2～1: 4, regulate operating air pressure 0.3～0.8Pa, adjust sputtering power 100～200W, open the sample disc rotation, substrate is heated to 200～250 ℃, and depositing time is 3～5 hours.
Compare with prior art, the present invention has following remarkable advantage:
(1) adopts the depositional plane of the back side (nucleation face) of free-standing diamond film, the contradiction between fine solution diamond substrate thickness of energy and the surfaceness as follow-up ZnO film.
(2) adopt two-step approach to prepare the high orientation ZnO film.Adopt dc sputtering, can use the Metal Zn target, this target is easily manufactured, can realize high-purity, cheap, the rate of film build height.Introduce the ZnO buffer layer, have great importance, obtain high c axle orientation probably, the ZnO film of good crystallinity, excellent property for the ZnO that on diamond thin, prepares.
Description of drawings
Fig. 1 is the present invention/ZnO homogeneous buffer layer/self-supporting diamond thin film structural representation.
Fig. 2 is ZnO film X-ray diffraction of the present invention (XRD) collection of illustrative plates
Fig. 3 is ZnO film atomic force microscope of the present invention (AFM) figure
Embodiment
Below specific embodiments of the invention are described in detail.
Embodiment 1
The technological process and the step of present embodiment are as follows:
(1) preparation of self-supporting diamond thin film:
(1) tantalum wire pre-treatment:
With rubber that the tantalum wire surface finish is clean, be evacuated down to 5Pa, feed hydrogen and acetone then and be respectively 200sccm and 50sccm, adjust air pressure 5KPa, be heated to 430 ℃, pre-treatment 30 minutes.
(2) substrate and pre-treatment thereof
1cm * the 1cm silicon chip is a substrate to adopt the p type, and with its minute surface as the diamond film face.Si was placed HF solution earlier 10 minutes, was the ultra-fine adamantine stone flour of 100nm and the hand lapping of glycerine mixed solution 15 minutes with granularity then.Place the acetone soln ultra sonic bath to clean 15 minutes substrate after grinding finishes, place deionized water for ultrasonic to bathe then and cleaned 15 minutes, repeat above-mentioned cleaning step 3 times, take out the substrate oven dry at last.
(3) deposition of diamond film
Silicon chip is placed on the sample bench, and minute surface upwards carries out the deposition of diamond film then, and its operation steps is as follows successively:
(a) vacuumize: utilize vacuum pump successively reaction chamber, hydrogen branch road and acetone branch road to be vacuumized, finally make reaction chamber base vacuum 4.5Pa;
(b) gas flow, air pressure adjustment: vacuumize finish after, open mass flowmeter successively and feed hydrogen and acetone, wherein hydrogen and acetone sulfur content are respectively 200sccm and 65sccm, again by regulate reducing valve with the stable gas pressure of reaction chamber at 1Pa;
(c) heat up: after the stable gas pressure, open water coolant and heater voltage, and, finally make temperature of reaction be in 620 ℃, add bias current 4A, nucleation 30 minutes with the speed rising heater voltage of 1/2V/min.
Adjust hydrogen and acetone flow and be respectively 200sccm and 50sccm, temperature of reaction is 680 ℃, operating air pressure 5Pa, depositing time 120 hours;
(d) cooling: keep processing condition to preset time, stop to feed acetone earlier, and reduce voltage,, close hydrogen and water coolant at last, take out sample to reduce temperature of reaction until room temperature with the speed of about 1/3V/min;
(4) silicon substrate is peeled off
The diamond thin with very big thickness of preparation places HF and HNO
3Volumetric molar concentration is in 1: 1 the solution, at room temperature to corrode 12 hours, treats to obtain required self-supporting shape diamond thin after the dissolving of Si substrate;
(2) direct current magnetron sputtering process prepares ZnO film:
Among the present invention, adopt dc reactive magnetron sputtering technique to prepare ZnO film, and with self-supporting diamond as substrate, about 400 μ m of self-supporting diamond thickness wherein.The purity of used zinc target is 99.99%, target diameter 120mm, and thickness 5mm, the distance of target and substrate is 80mm, in the reactive deposition process, hydrogen (Ar) is sputter gas, oxygen (O
2) be reactant gases, purity is 99.99%.
(1) self-supporting diamond thin film surface cleaning
Earlier place diamond substrate the acetone ultra sonic bath to clean 10 minutes, place deionized water for ultrasonic to bathe then and cleaned 15 minutes, it is very clean until the surface to repeat above-mentioned cleaning step 3 times, takes out the substrate oven dry at last;
(2) preparation ZnO buffer layer on self-supporting diamond thin film
The self-supporting diamond substrate is fixed in the magnetron sputtering cavity, and minute surface is downward, carries out the deposition of ZnO film then, and its operation steps is as follows successively:
(a) vacuumize: utilize unit contruction pump reaction chamber, Ar gas and O
2Feed channel vacuumizes, and finally making the reaction chamber base vacuum is 4.5Pa; Utilize molecular pump that reaction chamber is vacuumized, finally making the reaction chamber base vacuum is 2 * 10
-3Pa
(b) starter: vacuumize finish after, open the Ar mass flowmeter and feed Ar gas, and regulate flow 160sccm, open the constant-current source starter;
(c) gas flow, operating air pressure is regulated: after treating that the aura district is stable, feed O
2Gas is regulated Ar, O
2Throughput ratio Ar: O
2Be 1: 1, regulate operating air pressure 0.2Pa;
(d) adjustment of sputtering power: adjust sputtering power 100W, treat each parameter stability after, kept sputtering time 30 minutes, deposition ZnO buffer layer;
(3) deposition of ZnO main stor(e)y
After the preparation of ZnO buffer layer finishes, adjustments of gas Flow-rate adjustment Ar, O
2Throughput ratio is 1: 3, regulates operating air pressure 0.5Pa, adjusts sputtering power 200W, opens the sample disc rotation, and substrate is heated to 250 ℃, and depositing time is 3 hours.
Have well-crystallized quality and c axle orientation by prepared as can be seen ZnO film on X-ray diffraction (XRD) collection of illustrative plates (accompanying drawing 2); Atomic force microscope (AFM) (accompanying drawing 3) test finds that the ZnO film grain-size is little, the crystal mass height of film, and surfaceness is low.
Claims (1)
1. method of utilizing buffer layer to prepare high quality ZnO film is characterized in that this method has following technological process and step:
(1) preparation of self-supporting diamond thin film
1) tantalum wire pre-treatment: adopt tantalum wire in the hot-wire chemical gas-phase deposition method as heating source, earlier the tantalum wire surface finish is clean with rubber, vacuumize finish after, feed hydrogen and acetone to 4～6KPa, wherein the ratio of hydrogen and acetone is 1: 1～5: 1, is heated to 420～450 ℃ of left and right sides pre-treatment 20～30 minutes;
2) substrate pre-treatment: earlier p type 1cm * 1cm silicon chip was placed HF solution 5～10 minutes, be hand lapping 10～15 minutes in the ultra-fine adamantine stone flour of 100nm and the glycerine mixed solution in granularity then, place the acetone soln ultra sonic bath to clean 10～15 minutes silicon chip, placing deionized water for ultrasonic to bathe then cleaned 10～15 minutes, repeat above-mentioned cleaning step 3～5 times, very clean until the surface, take out the silicon chip oven dry at last;
3) deposition of diamond film: pretreated silicon chip is placed on the sample bench as substrate, and its minute surface carries out the deposition of diamond film upwards as the diamond film face; (a) vacuumize: utilize vacuum pump successively reaction chamber, hydrogen branch road and acetone branch road to be vacuumized, finally make reaction chamber base vacuum＜5Pa; (b) gas flow, air pressure adjustment: open mass flowmeter successively and feed hydrogen and acetone, the ratio of hydrogen and acetone is 1: 1～5: 1, again by the adjusting reducing valve with the reaction chamber stable gas pressure at 0.8～1.5Pa; (c) heat up: open water coolant and heater voltage switch, the speed rising heater voltage with about 1/2V/min finally makes temperature of reaction be in 580～620 ℃, adds bias current 4A, nucleation 30 minutes; (d) carry out the deposition 80～120 hours of diamond film, stop to feed acetone, and reduce voltage to reduce temperature of reaction, close hydrogen and water coolant at last, take out sample until room temperature with the speed of about 1/3V/min;
4) silicon substrate is peeled off: the diamond thin of preparation is placed HF and HNO
3Volumetric molar concentration is in 1: 1 the solution, at room temperature to corrode 10～15 hours, treats to obtain required self-supporting diamond thin film after the dissolving of Si substrate;
(2) direct current magnetron sputtering process prepares ZnO film
1) self-supporting diamond thin film surface cleaning: place the acetone ultra sonic bath to clean 10～15 minutes diamond substrate, placing deionized water for ultrasonic to bathe then cleaned 10～15 minutes, repeat above-mentioned cleaning step 3～5 times, very clean until the surface, take out the substrate oven dry at last;
2) preparation ZnO buffer layer on self-supporting diamond thin film: the self-supporting diamond substrate is fixed in the magnetron sputtering cavity, and minute surface is downward, carries out the deposition of ZnO film then; (a) vacuumize: utilize unit contruction pump reaction chamber, Ar gas and O
2Feed channel vacuumizes, and finally makes reaction chamber base vacuum＜5Pa; Utilize molecular pump that reaction chamber is vacuumized, finally make reaction chamber base vacuum＜3 * 10
-3Pa; (b) starter: vacuumize finish after, feed Ar gas, and regulate flow＞150 mark condition milliliter per minutes, open the constant-current source starter; (c) gas flow, operating air pressure is regulated: after treating that the aura district is stable, feed O
2Gas is regulated Ar, O
2Throughput ratio Ar: O
2Between 1: 1～1: 3, the adjusting operating air pressure is 0.2～0.9Pa; (d) adjustment of sputtering power: adjust sputtering power 50～100W, treat each parameter stability after, kept sputtering time 20～60 minutes, deposition ZnO buffer layer;
3) deposition of ZnO main stor(e)y: after the preparation of ZnO buffer layer finishes, adjustments of gas Flow-rate adjustment Ar, O
2Throughput ratio Ar: O
2Between 1: 2～1: 4, the adjusting operating air pressure is 0.3～0.8Pa, adjusts sputtering power 100～200W, opens the sample disc rotation, and substrate is heated to 200～250 ℃, and depositing time is 3～5 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100406397A CN101323971A (en) | 2008-07-16 | 2008-07-16 | Method for preparing high quality ZnO film using cushioning layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100406397A CN101323971A (en) | 2008-07-16 | 2008-07-16 | Method for preparing high quality ZnO film using cushioning layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101323971A true CN101323971A (en) | 2008-12-17 |
Family
ID=40187668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008100406397A Pending CN101323971A (en) | 2008-07-16 | 2008-07-16 | Method for preparing high quality ZnO film using cushioning layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101323971A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101866860A (en) * | 2010-05-26 | 2010-10-20 | 上海大学 | Preparation method of ZnO thin film field-effect transistor |
| CN102352484A (en) * | 2011-09-13 | 2012-02-15 | 山东理工大学 | Method for preparing titanium-doped zinc oxide transparent conductive film on polyethylene terephthalate (PET) flexible substrate |
| CN102699804A (en) * | 2012-06-14 | 2012-10-03 | 北京科技大学 | Method for leveling surface of diamond self-supporting membrane |
| CN101533876B (en) * | 2009-04-14 | 2013-03-20 | 长春理工大学 | Method for passivating amorphous InGaAs thin-film material |
| CN105951056A (en) * | 2016-05-26 | 2016-09-21 | 无锡特固新材料有限公司 | Preparation method of self-support ultrathin diamond single-crystal particles |
| CN106338347A (en) * | 2016-11-02 | 2017-01-18 | 清华大学 | Interdigital electrode material for high temperature surface acoustic wave sensor and the preparation method thereof |
| CN112430803A (en) * | 2020-11-16 | 2021-03-02 | 北京科技大学 | Preparation method of self-supporting ultrathin diamond film |
| CN112909281A (en) * | 2021-01-21 | 2021-06-04 | 深圳大学 | Stainless steel metal bipolar plate, preparation method thereof and fuel cell |
-
2008
- 2008-07-16 CN CNA2008100406397A patent/CN101323971A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533876B (en) * | 2009-04-14 | 2013-03-20 | 长春理工大学 | Method for passivating amorphous InGaAs thin-film material |
| CN101866860A (en) * | 2010-05-26 | 2010-10-20 | 上海大学 | Preparation method of ZnO thin film field-effect transistor |
| CN102352484A (en) * | 2011-09-13 | 2012-02-15 | 山东理工大学 | Method for preparing titanium-doped zinc oxide transparent conductive film on polyethylene terephthalate (PET) flexible substrate |
| CN102699804A (en) * | 2012-06-14 | 2012-10-03 | 北京科技大学 | Method for leveling surface of diamond self-supporting membrane |
| CN102699804B (en) * | 2012-06-14 | 2015-06-10 | 北京科技大学 | Method for leveling surface of diamond self-supporting membrane |
| CN105951056A (en) * | 2016-05-26 | 2016-09-21 | 无锡特固新材料有限公司 | Preparation method of self-support ultrathin diamond single-crystal particles |
| CN106338347A (en) * | 2016-11-02 | 2017-01-18 | 清华大学 | Interdigital electrode material for high temperature surface acoustic wave sensor and the preparation method thereof |
| CN112430803A (en) * | 2020-11-16 | 2021-03-02 | 北京科技大学 | Preparation method of self-supporting ultrathin diamond film |
| CN112430803B (en) * | 2020-11-16 | 2022-04-01 | 北京科技大学 | Preparation method of self-supporting ultrathin diamond film |
| CN112909281A (en) * | 2021-01-21 | 2021-06-04 | 深圳大学 | Stainless steel metal bipolar plate, preparation method thereof and fuel cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101323971A (en) | Method for preparing high quality ZnO film using cushioning layer | |
| CN104805405B (en) | Aluminium nitride piezoelectric film and preparation method thereof | |
| CN108570655B (en) | Preparation method of self-supporting nano diamond thick film | |
| WO2021047643A1 (en) | Reinforced nanofilm for outer cover of electronic equipment and preparation method therefor and use thereof | |
| CN106244984B (en) | Enhanced AlN films of a kind of a axis orientation and preparation method thereof | |
| CN101824592B (en) | Deposition method capable of enhancing preferred orientation growth of AlN film | |
| CN109545657A (en) | A kind of method of the gallium oxide film grown in improvement silicon carbide substrates | |
| CN107012439B (en) | A kind of scandium doped aluminum nitride film and preparation method thereof | |
| JP2003505596A (en) | Plasma CVD method and apparatus for producing microcrystalline Si: H film | |
| CN106011759B (en) | A kind of high c-axis orientation AlN films and the preparation method and application thereof | |
| CN100555853C (en) | Diamond multi-layered film structure surface acoustic wave device and preparation method thereof | |
| CN103594306B (en) | A kind of diamond/metallic composite supporting rod and preparation method | |
| CN101323982B (en) | Preparation of high quality cubic boron nitride film | |
| CN105506575A (en) | Manufacturing equipment and method of low temperature nanometer/ultrananocrystalline diamond film | |
| CN103700576A (en) | Preparing method of self-assembly forming-dimension-controllable silicon nanocrystal films | |
| CN110943708A (en) | Preparation method of ScAlN SAW resonator | |
| CN101768741A (en) | High-performance multi-layered membrane structure-borne noise surface wave device and preparation method thereof | |
| JP2019193242A (en) | Composite substrate for surface acoustic wave device and manufacturing method thereof | |
| CN102185583A (en) | AlN/GaN/freestanding diamond structured surface acoustic wave (SAW) device and preparation method thereof | |
| CN101805894B (en) | Preparation method for hydrogenated crystalline state nanometer carborundum films under low temperature | |
| CN102611405A (en) | Zinc oxide piezoelectric film for SAW (Surface Acoustic Wave) device and manufacturing method thereof | |
| CN106498395B (en) | The face high quality a aluminium nitride film and the preparation method and application thereof | |
| CN102286722B (en) | Preparation method of zinc oxide/diamond-like carbon surface acoustic wave device composite film | |
| CN106435503B (en) | A kind of silicon oxide film and its deposition method of big positive temperature coefficient | |
| CN101736313A (en) | Method for preparing diamond-like film on germanium substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20081217 |