CN106498395A - High-quality a faces aluminium nitride film and preparation method and application - Google Patents
High-quality a faces aluminium nitride film and preparation method and application Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
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Abstract
The invention discloses high-quality a faces aluminium nitride film and preparation method and application.The method comprises the steps：(1) molybdenum bisuphide coating is prepared in substrate surface, obtain the substrate of molybdenum bisuphide covering；(2) depositing zinc oxide on the substrate that the molybdenum bisuphide is covered, obtains the substrate of zinc bloom buffer layer thin film covering；(3) reactive sputtering is utilized, cvd nitride aluminium film on the substrate that the zinc bloom buffer layer thin film is covered, you can obtain a faces aluminium nitride film.Due to using molybdenum bisuphide substrate and zinc bloom buffer layer, the a faces aluminium nitride film that the present invention is prepared, scan its (1120) face rocking curve halfwidth and can be less than 1 °, with low spiral shell type and edge dislocation density, a faces aluminum nitride crystal quality is significantly improved；The problem of lattice mismatch aln layer and substrate layer between and coefficient of thermal expansion mismatch is effectively alleviated；Can be used to prepare high frequency, the SAW device of high-power, high electromechanical coupling factor.
Description
Technical field
The invention belongs to information electronic materials technical field, and in particular to high-quality a face aluminium nitride films and its preparation side
Method and application.
Background technology
In the past few decades, surface acoustic wave (SAW) device is due to excellent with small volume, light weight, signal handling capacity
The features such as different, good stability, it is widely used in mobile communication, television broadcasting and various military communications.With 4G networks with
And the appearance and development of the higher communication network of frequency, the usage frequency of SAW device improves constantly.Aluminium nitride is due to which
There is high heat conductance, high rigidity, high-melting-point, the chemical stability that dispersion is little, the velocity of sound is high, high, big disruptive field intensity and low Jie
Electrical loss, can be widely used for SAW device, various sensors, energy and collects in device.By the piezoelectric property of material, carry out
Acoustic-electric, power electricity conversion, enter transmission, process and the energy conversion of row information.Aluminium nitride film has all inorganic non-piezoelectric materials
Middle highest acoustic surface wave speed, therefore can become the piezoelectric for effectively improving center frequency of acoustic surface wave device.And with
General aluminium nitride film is compared, and highly oriented aluminium nitride film has many excellent performances.Aluminium nitride film is generally along pole
Property the growth of c-axis [0001] direction, and with regard to nonpolar a facesThe report of aluminium nitride is little.In fact, a faces aluminium nitride ratio
C faces aluminium nitride has more preferable piezoelectricity and surface acoustic wave high-speed transfer, therefore prepares a faces aluminium nitride film and will lift sound
Surface wave device phase velocity and electromechanical coupling factor.This has great meaning for preparing high-frequency sound surface wave device.At present, nitrogen
Change aluminium film and be typically grown in foreign substrate (sapphire, carborundum, silicon etc.).But, due between a faces aluminium nitride and substrate
There is larger lattice mismatch and thermal mismatching, cause aluminium nitride film crystal mass poor, exist higher dislocation density and compared with
Big stress, has had a strong impact on the performance of SAW device.So according to problem above, growth high-quality a faces aluminum nitride thin
Film is the key for preparing above-mentioned SAW device.
Content of the invention
It is an object of the invention to provide high-quality a faces aluminium nitride film and preparation method and application, the method utilizes two
Molybdenum sulfide substrate growth aluminium nitride film not only increases a planar orientations, and reduces the dislocation density of aluminium nitride film and answer
Power, a faces aluminium nitride film for preparing can make electromechanical conversion efficiency and biography when the piezoelectric membrane of SAW device is used as
Velocity of sound increase is broadcast, insertion loss reduces, is therefore suitable for preparing high frequency, high-power, high machine coefficient of coup SAW device.
The preparation method of a faces aluminium nitride film that the present invention is provided, comprises the steps：(1) two are prepared in substrate surface
Sulfuration molybdenum coating, obtains the substrate of molybdenum bisuphide covering；(2) depositing zinc oxide on the substrate that the molybdenum bisuphide is covered, obtains
To the substrate that zinc bloom buffer layer thin film is covered；(3) reactive sputtering is utilized, in the substrate that the zinc bloom buffer layer thin film is covered
Upper cvd nitride aluminium film, you can obtain a faces aluminium nitride film.
Above-mentioned preparation method, in step (1), the typical substrate that the substrate can be used using growth a faces aluminium nitride,
Including but not limited to：Sapphire, lanthanum aluminate or carborundum.
Above-mentioned preparation method, in step (1), on the substrate before molybdenum bisuphide described in spin coating, methods described is also
May include following steps：The substrate is cleaned with acetone, ethanol and/or deionized water, following steps are specifically may include：Use successively
Acetone, ethanol and deionized water clean the substrate.
Above-mentioned preparation method, in step (1), the molybdenum bisuphide coating can be made by the steps and obtain：By two
Molybdenum sulfide is spun on the substrate.
The spin coating is comprised the following steps that：Molybdenum bisuphide is scattered in ethanol or water the dispersion for obtaining molybdenum bisuphide
Liquid；By the dispersant liquid drop on the substrate for being positioned over equal glue machine, the equal glue machine rotation, drying is made.
The concentration of the dispersion liquid can be 0.05～0.1mg/mL, concretely 0.05mg/mL；
Control the equal glue machine and 5～10s is rotated with the rotating speed of 1000～5000r/min, be evenly distributed on molybdenum bisuphide
On the substrate, afterwards the flexible substrate is rapidly moved on 100～120 DEG C of warm table, dries stand-by, tool after 5～10min
Body can rotate 10～20s, 10s or 20s with the rotating speed of 2000～3000r/min, 2000r/min or 3000r/min, afterwards will lining
Bottom is rapidly moved on 150 DEG C of warm table, dries 10min.
Above-mentioned preparation method, in step (2), the thickness of the ZnO buffer thin film can be 5～40nm, concretely
40nm.
Above-mentioned preparation method, in step (2), the deposition can utilize magnetron sputtering, pulsed laser deposition, metal organic
The deposition of zinc oxide method such as compound chemical vapor deposition.
In the MOCVD,
The zinc source for being adopted can be diethyl zinc (DEZ)；
The flow in the zinc source can be 300～400 μm of ol/min, concretely 342～360 μm of ol/min, 342 μm of ol/
Min or 360 μm of ol/min；
The oxygen source for being adopted can be oxygen；
The flow of the oxygen source can be 450～500 μm of ol/min, concretely 450 μm of ol/min or 500 μm of ol/min；
Reaction pressure can be 3～6Torr, concretely 5Torr；
Depositing temperature can be 600～700 DEG C, concretely 600 DEG C；
Sedimentation time can be 1～5min, concretely 3～4min, 3min or 4min.
Above-mentioned preparation method, in step (3),
The reactive sputtering can be 10 in vacuum-6Pa～10-4Carry out under conditions of Pa, specifically can vacuum be 5 ×
10-5Carry out under conditions of Pa；
The working gas of the reactive sputtering can be the mixed gas of nitrogen and argon；In the working gas, the nitrogen
Gas can be (0.5～1) with the volume ratio of the argon：1, concretely 1：1；The purity of the argon can be 99.999%, institute
The purity for stating nitrogen can be 99.999%；The mode that is passed through of the working gas can be first to be passed through argon be passed through nitrogen again.
The working gas is to be passed into the true of the magnetron sputtering coater dynamically in real time by flow controller
In cavity；The flow for controlling the working gas can be 6～60mL/min, concretely 18mL/min.
Above-mentioned preparation method, in step (3), the reactive sputtering be direct current reaction magnetron sputtering, the reactive sputtering
Controlled sputtering source be flat target controlled sputtering source；
The power of the reactive sputtering can be 100～250W, concretely 200～250W, 200W or 250W；
The temperature of the reactive sputtering can be 500～600 DEG C, concretely 500 DEG C or 600 DEG C；
The time of the reactive sputtering is 20～60min, concretely 40min；
The target of the reactive sputtering can be aluminum target, and the diameter of the metallic aluminium target can be 75mm, and purity can be
99.999%；The distance between substrate that the target is covered with the zinc bloom buffer layer thin film can be 60mm～80mm, have
Body can be 60mm；
The pressure of the working gas can be 0.2～0.8Pa, concretely 0.4～0.8Pa, 0.4Pa or 0.8Pa.
After the completion of the reactive sputtering, also include treating chip bench temperature less than 100 DEG C, to the magnetron sputtering coater
It is atmospheric pressure to be filled with high pure nitrogen to vacuum indoor pressure in vacuum chamber, the step of take out prepared aluminium nitride film.
Invention further provides a kind of a faces aluminium nitride film prepared by above-mentioned preparation method.The a faces
The thickness of aluminium nitride film can be 600～800nm, such as 600nm or 800nm.A faces aluminium nitride filmShake in face
Pendulum curve halfwidth can be less than 1 °, and with low spiral shell type and edge dislocation density, a faces aluminum nitride crystal quality has and significantly carries
High.
Present invention also offers a kind of application of above-mentioned a faces aluminium nitride film in SAW device is prepared.The sound
Surface wave device can be high-frequency sound surface wave device, such as device center frequency 1.52GHz, and the velocity of sound is up to 6480m/s.
The present invention has the advantages that：
1st, due to adopting molybdenum bisuphide substrate and zinc bloom buffer layer used by the present invention, the present invention to prepare a faces nitrogen
Change aluminium film, scan its (1120) face rocking curve halfwidth and can be less than 1 °, with low spiral shell type and edge dislocation density, a faces
Aluminum nitride crystal quality is significantly improved.
2nd, the present invention is using molybdenum bisuphide substrate and zinc bloom buffer layer, effectively alleviate aln layer and substrate layer it
Between lattice mismatch and coefficient of thermal expansion mismatch problem so that the present invention prepare aluminium nitride film in stress ratio relatively low.
3rd, high-quality a faces aluminum nitride piezoelectric film prepared by the present invention can be used to prepare high frequency, high-power, high mechanical-electric coupling
The SAW device of coefficient, product reliability is strong, high yield rate and low cost.Present invention process is simple to operate, with low cost, it is easy to
Implement, be conducive to large-scale promotion application.
Description of the drawings
Fig. 1 is the cross-sectional view of a faces aluminium nitride film prepared by the present invention.
Fig. 2 is the SEM photograph in the embodiment of the present invention 1 being spin-coated on molybdenum bisuphide on substrate.
Fig. 3 is the AFM photos in the embodiment of the present invention 1 after developing zinc oxide.
Fig. 4 is the XRD figure of a faces aluminium nitride film prepared by the embodiment of the present invention 1, and illustration is a faces aluminium nitrideBrilliant
The rocking curve figure in face.
Fig. 5 is the AFM figures of a faces aluminium nitride film prepared by the embodiment of the present invention 1.
The TEM figures of a faces aluminium nitride film prepared by Fig. 6 embodiment of the present invention 1.
The SAW device signal of a faces aluminium nitride film prepared by Fig. 7 embodiment of the present invention 1.
Fig. 8 is the XRD figure of a faces aluminium nitride film prepared by the embodiment of the present invention 2, and illustration is a faces aluminium nitrideBrilliant
The rocking curve figure in face.
Fig. 9 is the AFM figures of a faces aluminium nitride film prepared by the embodiment of the present invention 2.
Specific embodiment
Experimental technique used in following embodiments if no special instructions, is conventional method.
In following embodiments, material used, reagent etc., if no special instructions, commercially obtain.
Embodiment 1, it is coated with direct current reaction magnetron sputtering depositing high-quality a faces in the r surface sapphire substrates of molybdenum bisuphide
Aluminium nitride film
(1) r surface sapphire substrates are respectively cleaned by ultrasonic 5min with acetone, ethanol and deionized water successively, then are blown with nitrogen
Dry, the substrate after cleaning is placed on equal Jiao Tai.
(2) compound concentration is the dispersion liquid of 0.05mg/mL molybdenum bisuphide and ethanol, by molybdenum bisuphide and the dispersion liquid of ethanol
Dropwise drop on substrate, start equal glue machine so as to the rotating speed rotation 20s of 3000r/min, make molybdenum bisuphide be evenly distributed on lining
On bottom, afterwards substrate is rapidly moved on 150 DEG C of warm table, stand-by after drying 10min.
In the step, the SEM photograph that molybdenum bisuphide is spun on substrate is as shown in Fig. 2 can be seen that substrate by the figure
On be dispersed with one layer of very thin curing molybdenum sheet.
(3) substrate in step (2) is put into metal organic chemical vapor deposition MOCVD reative cells, room temperature will be reacted
Degree is raised to 600 DEG C, by pressure rise to 5Torr, is passed through diethyl zinc (DEZ) and oxygen successively as reactant gas source, the stream of DEZ
Measure as 342 μm of ol/min, oxygen flow is 500 μm of ol/min, sedimentation time 3min.MOCVD reaction chamber temperatures are down to room temperature
Take out sample afterwards, obtain zinc bloom buffer layer thin film, as indicated at 3, zinc oxide surface is smooth, dense non-porous for its AFM photo, oxidation
R.m.s. roughness RMS=0.3nm of zinc film surface.
(4) the substrate iron wire in step (3) is fixed on the chip bench of magnetron sputtering, substrate is together with chip bench
Load vacuum chamber.Apart from target 60mm, target is that (99.999%) a diameter of 75mm, purity are to highly purified Al targets to substrate.Open
Dynamic mechanical pump and molecular pump are evacuated to 5 × 10-5Pa, during sputtering aluminium nitride, working gas is that (purity is high-purity argon gas
99.999%) with nitrogen (purity is 99.999%) mixed gas, wherein argon flow amount is 18mL/min, and nitrogen flow is
18mL/min.Operating air pressure is 0.4Pa, and radio-frequency power is 200W, and reaction temperature is 500 DEG C, and the rotational velocity of chip bench is 5r/
Min, sputtering time are 40min.Before formal sputtering is started, target is blocked with baffle plate.Al targets are bombarded with 250W incident powers
5min, removes target material surface impurity and oxide layer.High pure nitrogen, pre-sputtering 5min or so are passed through again, after power supply registration is stable,
Target baffle plate is opened, starts thin film growth.After the completion of reactive sputtering, stop heating chip bench, when temperature is less than 100 DEG C, to
It is atmospheric pressure that air is filled with the vacuum chamber of magnetron sputtering coater to vacuum indoor pressure, begins to speak to take out prepared aluminium nitride
Thin film, prepares the aluminium nitride film that average thickness is 800nm, and its structural representation is as shown in Figure 1.
The XRD spectrum of aluminium nitride film manufactured in the present embodiment as shown in figure 4, as can be seen from Figure 4 except substrate and
Outside the diffraction maximum of cushion zinc oxide, only there is diffraction maximum at 59.4 °, show using molybdenum bisuphide transition zone and oxidation zno buffer
Layer growing aluminum nitride thin film hasOrientation；Which can be seen that by Fig. 4 illustrationsFace rocking curve halfwidth is
0.91 °, hence it is evident that better than the sample for not adding molybdenum bisuphide transition zone, show that a faces aluminium nitride film crystal mass for growing is high.
The AFM figures of aluminium nitride film manufactured in the present embodiment are as shown in figure 5, can be seen that aluminium nitride film cause by the figure
Close non-porous, grain size is more uniform, and crystal grain arrangement is closely；R.m.s. roughness RMS=1.59nm on aluminium nitride film surface,
Fully meet the requirement for making SAW device.
The high-resolution TEM figures of aluminium nitride film manufactured in the present embodiment are as shown in fig. 6, illustration is diffraction spot.By the figure
As can be seen that aluminium nitride and Zinc Oxide Interface are clear, without conversion zone.ZnO film thickness average out to 40nm；Diffraction pattern is by clear
Clear sharp keen diffraction spot composition, the corresponding wurtzite structure of these diffraction patterns show that thin film is mono-crystalline structures, and without appointing
What his impurities phase.
Aluminium nitride SAW device signal manufactured in the present embodiment is as shown with 7.Device center frequency 1.52GHz, the velocity of sound are reachable
6480m/s, it is seen that the SAW device that high frequency can be prepared using a faces aluminium nitride.
Can be seen that using a faces nitridation grown on molybdenum bisuphide substrate and zinc bloom buffer layer by above-mentioned test result
Aluminium film crystal mass is high, the advantages of surface smooths, is fully achieved the requirement of sound surface device, has a good application prospect.
Embodiment 2, it is coated with the lanthanum aluminate substrate of molybdenum bisuphide the nitridation of direct current reaction magnetron sputtering depositing high-quality a faces
Aluminium film
(1) lanthanum aluminate substrate is respectively cleaned by ultrasonic 5min with acetone, ethanol and deionized water successively, then is dried up with nitrogen,
Substrate after cleaning is placed on equal Jiao Tai.
(2) compound concentration is the dispersion liquid of 0.05mg/mL molybdenum bisuphide and ethanol, by molybdenum bisuphide and the dispersion liquid of ethanol
Dropwise drop on substrate, start equal glue machine so as to the rotating speed rotation 10s of 2000r/min, make molybdenum bisuphide be evenly distributed on lining
On bottom, afterwards substrate is rapidly moved on 150 DEG C of warm table, stand-by after drying 10min.
(3) substrate in step (2) is put into metal organic chemical vapor deposition MOCVD reative cells, room temperature will be reacted
Degree is raised to 600 DEG C, by pressure rise to 5Torr, is passed through diethyl zinc (DEZ) and oxygen successively as reactant gas source, the stream of DEZ
Measure as 360 μm of ol/min, oxygen flow is 450 μm of ol/min, sedimentation time 4min.MOCVD reaction chamber temperatures are down to room temperature
Take out sample afterwards, obtain zinc bloom buffer layer thin film.
(4) the substrate iron wire in step (3) is fixed on the chip bench of magnetron sputtering, substrate is together with chip bench
Load vacuum chamber.Apart from target 60mm, target is that (99.999%) a diameter of 75mm, purity are to highly purified Al targets to substrate.Open
Dynamic mechanical pump and molecular pump are evacuated to 5 × 10-5Pa, during sputtering aluminium nitride, working gas is that (purity is high-purity argon gas
99.999%) with nitrogen (purity is 99.999%) mixed gas, wherein argon flow amount is 18mL/min, and nitrogen flow is
18mL/min.Operating air pressure is 0.8Pa, and radio-frequency power is 250W, and reaction temperature is 600 DEG C, and the rotational velocity of chip bench is 5r/
Min, sputtering time are 40min.Before formal sputtering is started, target is blocked with baffle plate.Al targets are bombarded with 250W incident powers
5min, removes target material surface impurity and oxide layer.High pure nitrogen, pre-sputtering 5min or so are passed through again, after power supply registration is stable,
Target baffle plate is opened, starts thin film growth.After the completion of reactive sputtering, stop heating chip bench, when temperature is less than 100 DEG C, to
It is atmospheric pressure that air is filled with the vacuum chamber of magnetron sputtering coater to vacuum indoor pressure, begins to speak to take out prepared aluminium nitride
Thin film, prepares the aluminium nitride film that average thickness is 600nm.
The XRD spectrum of aluminium nitride film manufactured in the present embodiment as shown in figure 8, as can be seen from Figure 8 except substrate and
Outside the diffraction maximum of cushion zinc oxide, only there is diffraction maximum at 59.4 °, show using molybdenum bisuphide transition zone and oxidation zno buffer
Layer growing aluminum nitride thin film hasOrientation；Which can be seen that by Fig. 8 illustrationsFace rocking curve halfwidth is
1.1 °, show that a faces aluminium nitride film crystal mass for growing is high.
The AFM figures of aluminium nitride film manufactured in the present embodiment are as shown in figure 9, can be seen that aluminium nitride film cause by the figure
Close non-porous, grain size is more uniform, and crystal grain arrangement is closely；R.m.s. roughness RMS=1.65nm on aluminium nitride film surface,
Fully meet the requirement for making SAW device.
Can be seen that using a faces nitridation grown on molybdenum bisuphide substrate and zinc bloom buffer layer by above-mentioned test result
The advantages of aluminium film, crystal mass height, homogeneous grain size, smooth surface, the requirement of sound surface device is fully achieved, with good
Good application prospect.
Claims (10)
1. a kind of preparation method of a faces aluminium nitride film, comprises the steps：(1) molybdenum bisuphide coating is prepared in substrate surface,
Obtain the substrate of molybdenum bisuphide covering；(2) depositing zinc oxide on the substrate that the molybdenum bisuphide is covered, obtains aoxidizing zno buffer
The substrate that layer film is covered；(3) reactive sputtering is utilized, cvd nitride aluminum on the substrate that the zinc bloom buffer layer thin film is covered
Thin film, you can obtain a faces aluminium nitride film.
2. preparation method according to claim 1, it is characterised in that：In step (1), the substrate is sapphire, aluminic acid
Lanthanum or carborundum.
3. preparation method according to claim 1 and 2, it is characterised in that：In step (1), the molybdenum bisuphide coating is led to
Cross following steps to prepare：Molybdenum bisuphide is spun on the substrate.
4. the preparation method according to any one of claim 1-3, it is characterised in that：In step (2), the ZnO bufferings
The thickness of layer film is 5nm～40nm.
5. the preparation method according to any one of claim 1-4, it is characterised in that：In step (2), the deposition is utilized
MOCVD.
6. preparation method according to claim 5, it is characterised in that：The MOCVD
In,
The zinc source for being adopted is diethyl zinc (DEZ)；
The flow in the zinc source is 300～400 μm of ol/min；
The oxygen source for being adopted is for oxygen；
The flow of the oxygen source is 450～500 μm of ol/min；
Reaction pressure is 3～6Torr；
Depositing temperature is 600～700 DEG C；
Sedimentation time is 1～5min.
7. the preparation method according to any one of claim 1-6, it is characterised in that：In step (3),
The reactive sputtering is 10 in vacuum-6Pa～10-4Carry out under conditions of Pa；
The working gas of the reactive sputtering is the mixed gas of nitrogen and argon；In the working gas, the nitrogen and institute
The volume ratio for stating argon is (0.5～1)：1；
The flow for controlling the working gas is 6mL/min～60mL/min.
8. the preparation method according to any one of claim 1-7, it is characterised in that：The reactive sputtering is direct current reaction
Magnetron sputtering, the controlled sputtering source of the reactive sputtering is flat target controlled sputtering source；
The power of the reactive sputtering is 100W～250W；
The temperature of the reactive sputtering is 500 DEG C～600 DEG C；
The time of the reactive sputtering is 20min～60min；
The target of the reactive sputtering is aluminum target；Between the substrate that the target and the zinc bloom buffer layer thin film are covered away from
From for 60mm～80mm；
The pressure of the working gas is 0.2Pa～0.8Pa.
9. a faces aluminium nitride film that the preparation method any one of claim 1-8 is prepared.
10. application of a faces aluminium nitride film described in claim 9 in SAW device is prepared.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110149102A (en) * | 2018-04-26 | 2019-08-20 | 北京纳米能源与系统研究所 | SAW device based on two-dimensional piezoelectric material film |
| CN110149102B (en) * | 2018-04-26 | 2023-12-08 | 北京纳米能源与系统研究所 | Surface acoustic wave device based on two-dimensional piezoelectric material film |
| CN113174574A (en) * | 2021-03-31 | 2021-07-27 | 奥趋光电技术(杭州)有限公司 | Preparation method of high-quality scandium-doped aluminum nitride film template |
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