CN101533876B - Method for passivating amorphous InGaAs thin-film material - Google Patents
Method for passivating amorphous InGaAs thin-film material Download PDFInfo
- Publication number
- CN101533876B CN101533876B CN2009100668144A CN200910066814A CN101533876B CN 101533876 B CN101533876 B CN 101533876B CN 2009100668144 A CN2009100668144 A CN 2009100668144A CN 200910066814 A CN200910066814 A CN 200910066814A CN 101533876 B CN101533876 B CN 101533876B
- Authority
- CN
- China
- Prior art keywords
- amorphous
- film
- ingaas
- film material
- ingaas thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to an amorphous InGaAs thin-film material which belongs to the technical field of optoelectronic material. The amorphous InGaAs thin-film material is essentially applied to infrared detector material. The prior magnetron sputtering method for preparing the material has the disadvantages that the internal defects are excessive, and the material is difficult to achieve the application level. The invention provides a method for passivating the amorphous InGaAs thin-film material in a way of forming a film while passivating to ensure that the quality of the amorphous InGaAs thin-film material prepared by the magnetron sputtering method is improved greatly, and the defect concentration is reduced greatly. The invention can ensure that the amorphous InGaAs thin-film material is applied practically, and the invention lays a foundation for developing 1.5-3.0mum high-performance infrared detector components and parts.
Description
Technical field
The present invention relates to technical field of semiconductor, belong to the surface passivation technique field of semi-conductor photoelectronic new material.
Background technology
The amorphous InGaAs thin-film material preparation cost is low, is a kind of emerging new material of preparation Infrared Detectors.The key that impact preparation amorphous InGaAs thin-film material is used is the interior a large amount of defectives of itself film, because the existence of a large amount of defectives, so that electronics, hole are compound in a large number at fault location, a large amount of charge carriers that consume, have a strong impact on the conductivity mobility, illumination response speed of amorphous InGaAs film etc., therefore must consider to use necessary technological means reduce injection defect.
Can effectively improve film surface and internal structure based on passivating technique, membrane structure is recombinated, greatly reduce the inside and outside defect concentration of film, the operating characteristic such as corresponding lifting film conductivity mobility, response speed.Therefore, we propose a kind of method of passivating amorphous InGaAs thin-film material, have realized the very big lifting of amorphous InGaAs thin-film material quality.So that be protected for relating to the application of amorphous InGaAs thin-film material at Infrared Detectors etc.
Summary of the invention
Common passivating method is realized by in certain ion atmosphere material being carried out surface rearrangement material surface.Different from passivating method in the past is, what the passivating amorphous InGaAs film process of our invention adopted is the mode that film forming and passivation are carried out simultaneously.Namely in the process that film forms, carry out passivation.
Embodiment
In magnetron sputtering apparatus, place backing material at slide holder, be higher than 99.999% InAs quality purity with quality purity respectively and be higher than the 99.999%GaAs material as the target material of wanting sputter; In the vacuum chamber vacuum less than 2 * 10
-4During Pascal, begin to pass into that bulk purity is higher than the 99.999%18-40sccm argon gas and bulk purity is higher than the mist of 99.999%2-15sccm hydrogen as the reacting gas of wanting ionization; Logical reaction gas 3-7 minute, adjusting slide holder rotary speed per minute 40-70 turns, in the vacuum chamber internal gas pressure is stabilized in 2-50 Pascal scope during certain value, the power source that unlatching links to each other with two targets, adjust sputtering power, by the ratio of component of each element in the sputtering power control amorphous InGaAs film, two target power output control ranges are in 45 watts of-200 watts of scopes; Substrate slide holder temperature is controlled in the 280-410 ℃ of scope; The magnetron sputtering time is controlled at 60-120 minute; Magnetron sputtering is complete, closes power source, and the vacuum chamber vacuum is evacuated to less than 2 * 10
-4Pascal under this vacuum pressure, closes chip bench temperature control power supply, naturally cools to 50 ℃ of taking-ups with the substrate of amorphous InGaAs film.
Claims (1)
1. the method for a passivating amorphous InGaAs thin-film material is characterized in that mixing in the film forming procedure hydrogen, mixes simultaneously and carries out passivation in the hydrogen process:
(1) quality purity is higher than 99.999% InAs and quality purity and is higher than 99.999% GaAs material as the target material of wanting sputter;
(2) the vacuum chamber vacuum is less than 2 * 10
-4Behind the Pascal, pass into that bulk purity is higher than 99.999%, 18-40sccm argon gas and bulk purity are higher than 99.999%, the mixed gas of 2-15sccm hydrogen is as the gas of pre-reaction ionization;
(3) logical argon gas, hydrogen mixed gas are 3-7 minute, adjusting slide holder rotary speed per minute 40-70 turns, in the vacuum chamber internal gas pressure is stabilized in 2-50 Pascal scope, the power source that unlatching links to each other with two targets, adjust sputtering power, by the ratio of component of each element in the sputtering power control amorphous InGaAs film, two target power output control ranges are in 45 watts of-200 watts of scopes; Substrate slide holder temperature is controlled in the 280-410 ℃ of scope;
(4) the magnetron sputtering time is controlled at 60-120 minute; Magnetron sputtering is complete, closes power source, and the vacuum chamber vacuum is evacuated to less than 2 * 10
-4Pascal under this vacuum pressure, closes chip bench temperature control power supply, naturally cools to 50 ℃, after ventilation reaches atmospheric pressure in the vacuum chamber, takes out the substrate with the amorphous InGaAs film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100668144A CN101533876B (en) | 2009-04-14 | 2009-04-14 | Method for passivating amorphous InGaAs thin-film material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100668144A CN101533876B (en) | 2009-04-14 | 2009-04-14 | Method for passivating amorphous InGaAs thin-film material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101533876A CN101533876A (en) | 2009-09-16 |
| CN101533876B true CN101533876B (en) | 2013-03-20 |
Family
ID=41104356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100668144A Expired - Fee Related CN101533876B (en) | 2009-04-14 | 2009-04-14 | Method for passivating amorphous InGaAs thin-film material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101533876B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9469107B2 (en) | 2013-07-12 | 2016-10-18 | Hewlett-Packard Development Company, L.P. | Thermal inkjet printhead stack with amorphous metal resistor |
| WO2015005933A1 (en) | 2013-07-12 | 2015-01-15 | Hewlett-Packard Development Company, L.P. | Thermal inkjet printhead stack with amorphous thin metal protective layer |
| US10177310B2 (en) | 2014-07-30 | 2019-01-08 | Hewlett Packard Enterprise Development Lp | Amorphous metal alloy electrodes in non-volatile device applications |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101235486A (en) * | 2007-11-07 | 2008-08-06 | 江苏南大光电材料股份有限公司 | Container for packaging solid high-purity metal organic compound and application thereof |
| CN101307428A (en) * | 2008-05-29 | 2008-11-19 | 玉环县金源比特科技发展有限公司 | Combined vacuum coating process of magnetron sputtering and multisphere ion plating |
| CN101323971A (en) * | 2008-07-16 | 2008-12-17 | 上海大学 | Method for preparing high quality ZnO film using cushioning layer |
-
2009
- 2009-04-14 CN CN2009100668144A patent/CN101533876B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101235486A (en) * | 2007-11-07 | 2008-08-06 | 江苏南大光电材料股份有限公司 | Container for packaging solid high-purity metal organic compound and application thereof |
| CN101307428A (en) * | 2008-05-29 | 2008-11-19 | 玉环县金源比特科技发展有限公司 | Combined vacuum coating process of magnetron sputtering and multisphere ion plating |
| CN101323971A (en) * | 2008-07-16 | 2008-12-17 | 上海大学 | Method for preparing high quality ZnO film using cushioning layer |
Non-Patent Citations (1)
| Title |
|---|
| YAO Yanping等.Optical and Electrical Properties of a-InGaAs:H Films Prepared by Double-Target Magnetron Co-sputtering.《2008 2nd IEEE International Nanoelectronics Conference》.2008,第1-3卷 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101533876A (en) | 2009-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101573782B (en) | Semiconductor layer manufacturing method, semiconductor layer manufacturing apparatus and semiconductor device manufactured by using such method and apparatus | |
| EP4191688A1 (en) | Coating apparatus, method and system, solar cell, module, and power generation system | |
| CN101533876B (en) | Method for passivating amorphous InGaAs thin-film material | |
| CN105244416B (en) | A kind of low temperature deposition process of copper antimony Se solar cell light absorbing zone film | |
| JP5387248B2 (en) | Semiconductor oxide thin film | |
| CN101820018A (en) | Preparation method of CdS thin-film | |
| US9828667B2 (en) | Method for making tin oxide thin film | |
| CN103262219A (en) | Method for the hydrogen passivation of semiconductor layers | |
| CN106299121B (en) | Based on CH3NH3PbI3Cmos device of material and preparation method thereof | |
| KR20110060211A (en) | Fabrication of cuinxga1-xse2 thin films solar cell by selenization process with se solution | |
| CN102212792A (en) | Method for preparing nitrogen-doped P-type zinc oxide film in one step by using nitrogen as doping source | |
| CN102934206B (en) | The manufacturing installation of solar cell and the manufacture method of solar cell | |
| CN102051576A (en) | Method for preparing n type doped cubic boron nitride pellicle | |
| CN101777604A (en) | Method for preparing thin film solar cell adsorbing layer CuInSe2 film | |
| CN108754420A (en) | A method of preparing Cu doping AlN diluted semi-conductor thin-films | |
| US20160326634A1 (en) | Tin oxide sputtering target and method for making the same | |
| US20100267191A1 (en) | Plasma enhanced thermal evaporator | |
| CN104810431A (en) | Method for preparing copper indium gallium selenide thin film through screen printing process | |
| JP5387247B2 (en) | Conductive oxide | |
| CN103000502A (en) | Method for implementing aluminum diffusion on silicon wafer | |
| KR101237466B1 (en) | Device for forming light absorbing layer by selenization | |
| CN102560362A (en) | Method for preparing p-type CuAlO2 transparent conductive film | |
| Choi et al. | Effect of process pressure and substrate temperature on CdS buffer layers deposited by using RF sputtering for Cu (In, Ga) Se 2 solar cells | |
| KR20130038769A (en) | Inline system apparatus for high speed manufacturing of large-sized cigs thin film on glass substrate using multi-stage process and methods mnufacturing large-sized cigs thin film | |
| CN102816999A (en) | Selenium film deposition method and system and plasma head thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130320 Termination date: 20140414 |