CN102611406A - Surface acoustic wave device based on ALN (aluminum nitride) piezoelectric films in double crystal orientations and preparation method for same - Google Patents
Surface acoustic wave device based on ALN (aluminum nitride) piezoelectric films in double crystal orientations and preparation method for same Download PDFInfo
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Abstract
A novel high-frequency surface acoustic wave device based on ALN (aluminum nitride) piezoelectric films in double crystal orientations comprises a nano-diamond substrate, the ALN film in the a-axis preferred orientation, the ALN film in the c-axis preferred orientation and an IDT (inter-digital transducer) in sequential stacking, so that an IDT/c-ALN/a-ALN/ diamond multilayer film structure is formed. The preparation method for the surface acoustic wave device includes the steps: 1) preparing the nano-diamond substrate by the aid of an MPCVD (microwave plasma chemical vapor deposition) method; 2) preparing the ALN piezoelectric films by the aid of a radio-frequency sputtering method; and 3) preparing the IDT by the aid of an electron beam evaporation method. The novel high-frequency surface acoustic wave device and the preparation method have the advantages that the high-frequency surface acoustic wave device is high in frequency and electromechanical coupling coefficient, and is capable of meeting the requirements of high frequency and high-power mobile communication; and the preparation method is simple in used equipment, convenient and feasible in process conditions and beneficial to extensive popularization and application and is of great significance to production practice.
Description
Technical field
The invention belongs to the SAW device technical field, particularly a kind of based on the AlN twin crystal to SAW device of piezoelectric membrane and preparation method thereof.
Background technology
In recent years; Development along with telecommunications; The particularly raising of semiconductor process technology makes the production of high-frequency sound surface wave filter resonator become possibility, from satellite communication, radar guidance, wireless remote control, radio and television to mobile communication; All extensively adopt SAW device, make radio communication frequency bands become a limited and valuable natural resources.For GSM, the frequency band that is lower than 1GHz has been taken (first generation digital system); The frequency of second generation digital system is from 900MHz to 1.9GHz; In third generation digital system, the global roaming frequency range is 1.8-2.2GHz, and global position system (GPS) frequency is 1.575GHz, and the applying frequency scope of the new satellite communication of Low Earth Orbit (LEO) is 1.6GHz-2.5GHz.Therefore, the applying frequency of present GSM is increasingly high, is badly in need of surface acoustic wave (SAW) filter of high frequency, and moves logical moving communicator and all require the try one's best miniaturization and have bigger power bearing ability of surface acoustic wave SAW filter.
For conventional SAW material, like quartzy, LiNbO
3, LiTaO
3, ZnO etc., the velocity of sound is lower, all is lower than 4000m/s; With its SAW device of making 2.5GHz, its IDT finger beam d must be less than 0.4 μ m, and the finger beam d of 5GHz correspondence is less than 0.2 μ m; Approach the limit of present semi-conductor industry level, cause severed finger serious, rate of finished products is too low.And d is more little, and resistance is just big more, and power bearing ability is more little, has seriously restricted the further raising of SAW device frequency, hankers after both at home and abroad at present reaching the effect that improves frequency through improving velocity of sound V.Because diamond has the highest modulus of elasticity (E=1200Gpa) and the low (ρ=3.519/cm of density of material in all material
3), the highest longitudinal wave velocity characteristics such as (18000m/s), so diamond is the optimal material of this method.And diamond itself does not have piezoelectric property, can't carry out acoustic-electric conversion, still adopt diamond to combine with piezoelectric the multilayer film system, the performance of SAW is determined by piezoelectric membrane and diamond substrate jointly.C-AlN has high electromechanical coupling factor, but the velocity of sound is 5600m/s, differs bigger with the adamantine velocity of sound, cause velocity of sound frequency dispersion easily, and phase velocity alters a great deal with the frequency difference.
Therefore, press at present and develop a kind of multilayer film substrate that can improve the SAW device frequency, and electromechanical coupling factor is high through minimizing velocity of sound frequency dispersion.
Summary of the invention
The objective of the invention is to above-mentioned technical Analysis and existing problems; A kind of novel high-frequency SAW device and preparation method based on piezoelectric membrane is provided; This high-frequency sound surface wave device frequency is high, electromechanical coupling factor is high, can satisfy the requirement of high-frequency and high-power mobile communication; This preparation method's device therefor is simple, process conditions are convenient and easy, help applying on a large scale, is of great practical significance.
Technical scheme of the present invention:
A kind of novel high-frequency SAW device based on the AlN piezoelectric membrane; By the AlN film of the AlN film of Nano diamond substrate, a axle preferrel orientation, c axle preferrel orientation and interdigital transducer (IDT) formation that superposes successively, form IDT/c-AlN/a-AlN/ diamond multilayer membrane structure.
Said Nano diamond substrate film thickness is 3-μ m, and the thickness of a-axle preferrel orientation AlN film is 300nm, and the thickness of c axle preferrel orientation AlN film is 300nm.
A kind of preparation method of said novel high-frequency SAW device based on the AlN piezoelectric membrane, step is following:
1) adopts microwave plasma chemical vapor deposition (MPCVD) method to prepare the Nano diamond substrate, put it into then and carry out the piezoelectric membrane preparation in the sputtering equipment;
2) preparation AlN piezoelectric membrane: as target, adopt radio frequency sputtering method to prepare a-axle preferrel orientation AlN film at above-mentioned Nano diamond substrate surface with the Al target, preparation slowly is cooled to 300 ℃, the film of a axle preferrel orientation of formation after accomplishing in nitrogen environment; Be under 300 ℃ of conditions in temperature then, as target, adopt radio frequency sputtering method to continue at above-mentioned a-axle preferrel orientation AlN film-substrate surface preparation c-axle preferrel orientation AlN film with the Al target, preparation slowly is cooled to normal temperature after accomplishing in nitrogen environment;
3) on above-mentioned c-AlN/a-AlN/ diamond substrate, adopt electron-beam vapor deposition method to prepare interdigital transducer IDT.
The technological parameter that said employing MPCVD legal system is equipped with the Nano diamond substrate is: microwave power 4000W, pressure 70torr, working gas H2: CH4: O2=546: 45: 9, the flow of mist are that 600sccm, sedimentation time are 2 hours.
The said radio frequency sputtering technological parameter for preparing a-axle preferrel orientation AlN film at the Nano diamond substrate surface is: in nitrogen and argon gas mist, react; The flow of mist is 20sccm; The volume ratio of nitrogen and argon gas is 12: 8; The purity of nitrogen and argon gas is 99.999%; Underlayer temperature is that 400 ℃, target-substrate distance 10cm, sputtering power are that 150W, operating air pressure 0.6Pa, sputtering time are 2 hours, closes the argon gas continued and feeds nitrogen and slowly be cooled to 300 ℃, and temperature fall time is 1 hour.
The said radio frequency magnetron technological parameter for preparing c-axle preferrel orientation AlN at the AlN of a-axle preferrel orientation film surface is: in nitrogen and argon gas mist, react; The flow of mist is 20sccm; The volume ratio of nitrogen and argon gas is 12: 8; The purity of nitrogen and argon gas is 99.999%; Underlayer temperature is 300 ℃, target-substrate distance 6cm, radio-frequency power 150W, operating air pressure 0.5Pa, sputtering time 2 hours, closes the argon gas continued and feeds nitrogen and slowly be cooled to normal temperature, and temperature fall time is 2 hours.
Advantage of the present invention is: this high-frequency sound surface wave device is an IDT/c-axle preferrel orientation AlN/a-axle preferrel orientation AlN/ Nano diamond multi-layer film structure; This structure SAW device frequency is high, electromechanical coupling factor is high, can satisfy the requirement of high-frequency and high-power mobile communication; This preparation method's device therefor is simple, process conditions are convenient and easy, help applying on a large scale, is of great practical significance.
Description of drawings
Fig. 1 is this high-frequency sound surface wave device structural representation.
Fig. 2 is the infrared spectrogram of this high-frequency sound surface wave device AlN film.A point expression AlN structure among the figure.
Fig. 3 is the sem photograph of this high-frequency sound surface wave device AlN film.
Embodiment
In order to make those skilled in the art person understand the present invention program better, the present invention is done further detailed description below in conjunction with accompanying drawing and execution mode.
Embodiment:
A kind of novel high-frequency SAW device based on the AlN piezoelectric membrane; As shown in Figure 1; By the AlN film of the AlN film of Nano diamond substrate, a axle preferrel orientation, c axle preferrel orientation and interdigital transducer (IDT) formation that superposes successively, form IDT/c-ALN/a-ALN/ diamond multilayer membrane structure, Nano diamond substrate film thickness is 4 μ m; The thickness of a-axle preferrel orientation AlN film is 300nm, and the thickness of c axle preferrel orientation AlN film is 300nm.
A kind of preparation method of said novel high-frequency SAW device based on the AlN piezoelectric membrane, step is following:
1) adopt microwave plasma chemical vapor deposition (MPCVD) method to prepare the Nano diamond substrate that thickness is 3 μ m-5 μ m; Device therefor is that the model of Japanese SEKI company is the MPCVD of AX6500; Technological parameter is: microwave power 4000W, pressure 70torr, working gas H2: CH4: 02=546: 45: 9, the flow of mist are that 600sccm, sedimentation time are 2 hours, put it into then and carry out the piezoelectric membrane preparation in the sputtering equipment;
2) preparation AlN piezoelectric membrane: sputtering equipment is that the model that Shenyang Scientific Instrument Research & Mfg. Center Co., Ltd., C.A.S produces is the ultra-high vacuum multifunctional sputtering equipment of JGP450; With the Al target as target; Adopt radio frequency sputtering method to prepare the a-axle preferrel orientation AlN film that thickness is 300nm at above-mentioned Nano diamond substrate surface; Technological parameter is: in nitrogen and argon gas mist, react, the flow of mist is 20sccm, and the volume ratio of nitrogen and argon gas is 12: 8; The purity of nitrogen and argon gas is 99.999%; Underlayer temperature is that 400 ℃, target-substrate distance 10cm, sputtering power are that 150W, operating air pressure 0.6Pa, sputtering time are 2 hours, closes the argon gas continued and feeds nitrogen and slowly be cooled to 300 ℃, and temperature fall time is 1 hour; Be under 300 ℃ of conditions in temperature then; As target, adopting radio frequency sputtering method to continue at above-mentioned a-axle preferrel orientation AlN film-substrate surface preparation thickness is the c-axle preferrel orientation AlN film of 300nm with the Al target, and technological parameter is: in nitrogen and argon gas mist, react; The flow of mist is 20sccm; The volume ratio of nitrogen and argon gas is 12: 8, and the purity of nitrogen and argon gas is 99.999%, and underlayer temperature is 300 ℃, target-substrate distance 6cm, radio-frequency power 150W, operating air pressure 0.5Pa, sputtering time 2 hours; Close argon gas continued feeding nitrogen and slowly be cooled to normal temperature, temperature fall time is 2 hours;
3) on above-mentioned c-AlN/a-AlN/ diamond substrate, adopt electron-beam vapor deposition method to prepare interdigital transducer IDT.
Fig. 2 is the infrared spectrogram of this high-frequency sound surface wave device AlN film, shows among the figure: abscissa 667 place's reflection peaks are represented the AlN film.
Fig. 3 is the sem photograph of this high-frequency sound surface wave device AlN film, shows among the figure: the ESEM result shows that thin film surface planeness satisfies the SAW device requirement.
Claims (6)
1. novel high-frequency SAW device based on the AlN piezoelectric membrane; It is characterized in that:, form IDT/c-AlN/a-AlN/ diamond multilayer membrane structure by the AlN film of the AlN film of Nano diamond substrate, a axle preferrel orientation, c axle preferrel orientation and interdigital transducer (IDT) formation that superposes successively.
2. according to the said novel high-frequency SAW device of claim 1 based on the AlN piezoelectric membrane; It is characterized in that: said Nano diamond substrate film thickness is 3-5 μ m; The thickness of a-axle preferrel orientation AlN film is 300nm, and the thickness of c axle preferrel orientation AlN film is 300nm.
3. one kind according to claim 1 based on the preparation method of the novel high-frequency SAW device of AlN piezoelectric membrane, it is characterized in that step is following:
1) adopts microwave plasma chemical vapor deposition (MPCVD) method to prepare the Nano diamond substrate, put it into then and carry out the piezoelectric membrane preparation in the sputtering equipment;
2) preparation AlN piezoelectric membrane: as target, adopt radio frequency sputtering method to prepare a-axle preferrel orientation AlN film at above-mentioned Nano diamond substrate surface with the Al target, preparation slowly is cooled to 300 ℃, the film of a axle preferrel orientation of formation after accomplishing in nitrogen environment; Be under 300 ℃ of conditions in temperature then, as target, adopt radio frequency sputtering method to continue at above-mentioned a-axle preferrel orientation AlN film-substrate surface preparation c-axle preferrel orientation AlN film with the Al target, preparation slowly is cooled to normal temperature after accomplishing in nitrogen environment;
3) on above-mentioned c-AlN/a-AlN/ diamond substrate, adopt electron-beam vapor deposition method to prepare interdigital transducer IDT.
4. according to the preparation method of the said novel high-frequency SAW device based on the AlN piezoelectric membrane of claim 3, it is characterized in that: the technological parameter that said employing MPCVD legal system is equipped with the Nano diamond substrate is: microwave power 4000W, pressure 70torr, working gas H2: CH4: O2=546: 45: 9, the flow of mist are that 600sccm, sedimentation time are 2 hours.
5. according to the preparation method of the said novel high-frequency SAW device based on the AlN piezoelectric membrane of claim 3; It is characterized in that: the said radio frequency sputtering technological parameter for preparing a-axle preferrel orientation AlN film at the Nano diamond substrate surface is: in nitrogen and argon gas mist, react; The flow of mist is 20sccm; The volume ratio of nitrogen and argon gas is 12: 8, and the purity of nitrogen and argon gas is 99.999%, and underlayer temperature is that 400 ℃, target-substrate distance 10cm, sputtering power are that 150W, operating air pressure 0.6Pa, sputtering time are 2 hours; Close argon gas continued feeding nitrogen and slowly be cooled to 300 ℃, temperature fall time is 1 hour.
6. according to the preparation method of the said novel high-frequency SAW device based on the AlN piezoelectric membrane of claim 3; It is characterized in that: the said radio frequency magnetron technological parameter for preparing c-axle preferrel orientation AlN at the AlN of a-axle preferrel orientation film surface is: in nitrogen and argon gas mist, react; The flow of mist is 20sccm; The volume ratio of nitrogen and argon gas is 12: 8, and the purity of nitrogen and argon gas is 99.999%, and underlayer temperature is 300 ℃, target-substrate distance 6cm, radio-frequency power 150W, operating air pressure 0.5Pa, sputtering time 2 hours; Close argon gas continued feeding nitrogen and slowly be cooled to normal temperature, temperature fall time is 2 hours.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103095244A (en) * | 2013-01-23 | 2013-05-08 | 天津理工大学 | Preferred orientation AIN piezoelectric film and preparation method thereof |
| CN104359584A (en) * | 2014-11-12 | 2015-02-18 | 中国科学院微电子研究所 | High-temperature surface acoustic wave temperature sensor |
| CN105978520A (en) * | 2016-05-12 | 2016-09-28 | 电子科技大学 | SAW device of multilayer structure and preparation method of SAW device |
| CN106160691A (en) * | 2016-07-05 | 2016-11-23 | 电子科技大学 | A kind of High Frequency SAW Device based on Si base and preparation method thereof |
| CN112467005A (en) * | 2020-11-18 | 2021-03-09 | 福建中晶科技有限公司 | Preparation method of multi-composite-layer patterned sapphire substrate |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103095244A (en) * | 2013-01-23 | 2013-05-08 | 天津理工大学 | Preferred orientation AIN piezoelectric film and preparation method thereof |
| CN104359584A (en) * | 2014-11-12 | 2015-02-18 | 中国科学院微电子研究所 | High-temperature surface acoustic wave temperature sensor |
| CN105978520A (en) * | 2016-05-12 | 2016-09-28 | 电子科技大学 | SAW device of multilayer structure and preparation method of SAW device |
| CN105978520B (en) * | 2016-05-12 | 2019-04-05 | 电子科技大学 | A kind of SAW device of multilayered structure and preparation method thereof |
| CN106160691A (en) * | 2016-07-05 | 2016-11-23 | 电子科技大学 | A kind of High Frequency SAW Device based on Si base and preparation method thereof |
| CN112467005A (en) * | 2020-11-18 | 2021-03-09 | 福建中晶科技有限公司 | Preparation method of multi-composite-layer patterned sapphire substrate |
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Application publication date: 20120725 |