CN109450419A - RF switch chip - Google Patents
RF switch chip Download PDFInfo
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- CN109450419A CN109450419A CN201811463780.8A CN201811463780A CN109450419A CN 109450419 A CN109450419 A CN 109450419A CN 201811463780 A CN201811463780 A CN 201811463780A CN 109450419 A CN109450419 A CN 109450419A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
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Abstract
The invention discloses a kind of RF switch chips, including including signal port, antenna, N number of first switch module, N number of second switch module, biasing and control circuit, each switch module of N number of first switch module and N number of second switch module is connected in series between signal port and antenna by signal wire；N number of first switch module and N number of second switch module are arranged by formed symmetrical of the antenna；Biasing and control circuit are connect with N number of first switch module and N number of second switch module respectively, the biasing and control circuit, for controlling a switch module in N number of first switch module or the switch module conducting in N number of second switch module, for the switching molding block transmission signals between signal port and antenna by being uniquely connected.The present invention solves the problems, such as radio signal transmission quality, improves response speed.
Description
Technical field
The present invention relates to radio frequency arts, in particular to a kind of RF switch chip.
Background technique
RF switch, including switch core and switch controller, for controlling the on-off of radio communication number connection transmitting antenna.
It is the smart phone for representing the multi mode multi band of wireless technology of 3G/4G with LTE technology with the fast development of wireless technology
In system, the quantity of mode and frequency range is being constantly increasing, such as operating mode has GSM, TDSCDMA, WCDMA and TDD-
LTE etc., frequency range cover the range from 700MHz to 6GHz, and the mobile terminals such as smart phone pass through needed for RF switch selection
The channel of power amplification multiplying power, establishment model and frequency band signals is realized by controlling the on-off of unlike signal in different mode
Switch between frequency range.This just needs RF switch in the case where keeping the performances such as linear, and there are more channel paths to locate
Manage wider array of frequency range.
Switch core is made of multiple element circuits, and each element circuit is connected in series by multiple transistor legs.It is wrapping
It is mixed and disorderly inconsistent due to element circuit domain disposing way in RF switch chip containing multiple RF switches, influence letter
Number transmission quality, reduce RF switch response speed.
Summary of the invention
The main object of the present invention is to propose a kind of RF switch chip, it is intended to solve the response speed of RF switch.
To achieve the above object, the present invention proposes a kind of RF switch chip, including signal port, antenna, N number of first opens
Close module, N number of second switch module, biasing and control circuit, N number of first switch module and N number of second switch mould
Each switch module of block is connected in series between the signal port and the antenna by signal wire；N number of described first opens
Module and N number of second switch module is closed to be arranged by formed symmetrical of the antenna；
The biasing and control circuit are connect with N number of first switch module and N number of second switch module respectively,
The biasing and control circuit, for controlling the switch module or N number of described second in N number of first switch module
Switch module conducting in switch module, for the switch between the signal port and the antenna by being uniquely connected
Module transfer signal.
Optionally, N number of first switch module is at single setting, and orientation and N number of first switch module
Consistent with the symmetry axis extending direction of N number of second switch module, N number of second switch module corresponds to N number of described first
Switch module setting.
Optionally, N number of first switch module is arranged relative to the antenna inside and outside two rows, and the arrangement side of each row
To, the institute of inside and outside two rows consistent with the symmetry axis extending direction of N number of first switch module and N number of second switch module
It states first switch module and mutually staggers setting in its orientation, N number of second switch module corresponds to N number of described first and opens
Close module setting.
Optionally, the quantity that the first switch module of inside and outside two rows mutually staggers in its orientation be one or
Person is multiple, and N number of second switch module corresponds to N number of first switch module setting.
Optionally, the spacing in N number of first switch module between any two adjacent first switch modules be greater than or
Person is equal to 150 microns；
And/or
Spacing in N number of second switch module between any two adjacent second switch modules is more than or equal to
150 microns.
Optionally, the switch module in the RF switch chip includes rf inputs, RF output end, switch unit
Circuit, gate voltage control circuit and body pole control circuit, wherein
The switch unit circuit includes multiple switch unit, and multiple switch units are sequentially connected in series to be penetrated in described
Between frequency input terminal and the RF output end, the grid of each switch unit in the switch unit circuit is connected with each other,
Public grid is formed, body pole is connected with each other, and forms common body pole；
The rf inputs are connect with the source electrode of the switch unit circuit, and the RF output end and the switch are single
The drain electrode of first circuit connects, and the public grid of the switch unit circuit is connect with the gate voltage control circuit, described to open
The common body pole closed in element circuit is connect with body pole control circuit.
Optionally, the gate voltage control circuit includes public grid biasing resistor, first resistor and first capacitor；
The first end of the public grid biasing resistor is connect with the grid of multiple switch units, the public grid
The second end of biasing resistor is separately connected with the first end of the first resistor and the first end of the first capacitor, and described first
The second end of resistance is connect with the grid-control voltage, the second end ground connection of the first capacitor；
Body pole control circuit includes common body pole biasing resistor, second resistance and the second capacitor；
The first end of common body pole biasing resistor is connect with the body of each switching tube common end extremely interconnected, described
The second end of common body pole biasing resistor and the first end of the first end of the second resistance and second capacitor are separately connected,
The second end of the second resistance and the second end of second capacitor are grounded respectively.
Optionally, each switch module in the first switch module and second switch module includes identical quantity
Switch unit, each switch unit include the switching tube that the common gate of identical quantity is connected in parallel.
Optionally, each switch module in the first switch module and second switch module includes the switch unit
Quantity be 6.
Optionally, the switching tube in each switch unit is SOI transistor, the quantity of the SOI transistor
It is 100.
Technical solution of the present invention includes signal port, antenna, N number of first switch module, N number of by RF switch chip
Two switch modules, biasing and control circuit, each switch of N number of first switch module and N number of second switch module
Module is connected in series between the signal port and the antenna by signal wire；N number of first switch module and N number of institute
Second switch module is stated to be arranged by formed symmetrical of the antenna；The biasing and control circuit are opened with N number of described first respectively
It closes module to connect with N number of second switch module, the biasing and control circuit, for controlling N number of first switch mould
Switch module conducting in a switch module or N number of second switch module in block, for the signal end
Switching molding block transmission signals between mouth and the antenna by being uniquely connected.The present invention, which realizes, to be reduced radiation interference, reduces
Parasitic capacitance etc. improves the response of RF switch chip to solve the problems, such as RF switch chip signal transmission quality
Speed.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the switch topology domain of one embodiment of RF switch chip of the present invention；
Fig. 2 is the switch topology domain of another embodiment of RF switch chip of the present invention；
Fig. 3 is the structural block diagram of one embodiment of RF switch microarray biochip of the present invention；
Fig. 4 is one embodiment electrical block diagram of RF switch chip of the present invention；
Fig. 5 is circuit reduction structural schematic diagram shown in Fig. 4；
Fig. 6 is the switch unit electrical block diagram of one embodiment of RF switch chip of the present invention；
Fig. 7 is circuit reduction structural schematic diagram shown in fig. 6.
Drawing reference numeral explanation:
| Label | Title | Label | Title |
| 10 | Signal port | Vg | Grid-control voltage |
| 20 | Antenna | GND | Ground terminal |
| 30 | First switch module | Rg | Public grid biasing resistor |
| 40 | Second switch module | Rb | Common body pole biasing resistor |
| 50 | Signal wire | R1 | First resistor |
| 310 | Rf inputs | R2 | Second resistance |
| 320 | RF output end | C1 | First capacitor |
| 330 | Switch unit circuit | C2 | Second capacitor |
| 340 | Gate voltage control circuit | 510 | Switching tube |
| 350 | Body pole control circuit |
The realization of the object of the invention, functional characteristics and it can put that the embodiments will be further described with reference to the accompanying drawings.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that if relating to directionality instruction (such as up, down, left, right, before and after ...) in the embodiment of the present invention,
Then directionality instruction be only used for explain under a certain particular pose (as shown in the picture) between each component relative positional relationship,
Motion conditions etc., if the particular pose changes, directionality instruction is also correspondingly changed correspondingly.
In addition, being somebody's turn to do " first ", " second " etc. if relating to the description of " first ", " second " etc. in the embodiment of the present invention
Description be used for description purposes only, be not understood to indicate or imply its relative importance or implicitly indicate indicated skill
The quantity of art feature." first " is defined as a result, the feature of " second " can explicitly or implicitly include at least one spy
Sign.It in addition, the technical solution between each embodiment can be combined with each other, but must be with those of ordinary skill in the art's energy
It is enough realize based on, will be understood that the knot of this technical solution when conflicting or cannot achieve when occurs in the combination of technical solution
Conjunction is not present, also not the present invention claims protection scope within.
The present invention proposes that a kind of RF switch chip, RF switch chip refer to radio signal communications being converted into one
Fixed radio signal waveform, and the electronic component sent by antenna resonance.RF switch microarray biochip packet
Include receiving channel and transmission channel two large divisions.The RF switch chip category cable television network or communications field signaling switch,
It is logical applied to carrier telephone switching, cable TV signal switching, cable TV signal switch, rf channel switching, control radio frequency
The on-off etc. of signal connection transmitting antenna.In existing RF switch chip, due to each switch version of RF switch chip
Figure disposing way it is mixed and disorderly inconsistent, lead to the area and cost increase of RF switch, while having between RF switch chip
Signal interference influences the signal port from RF switch chip to the signal transmission antenna, results in transmission process
The reduction of signal quality reduces the performances such as RF switch chip response speed.
To solve the above problems, in an embodiment of the present invention, reference is as shown in Figure 1, the RF switch chip includes packet
Include signal port 10, antenna 20, N number of first switch module 30, N number of second switch module 40, biasing and control circuit (in figure not
Draw), each switch module of N number of first switch module 30 and N number of second switch module 40 passes through signal wire 50
It is connected in series between the signal port 10 and the antenna 20；N number of first switch module 30 and N number of described second is opened
Module 40 is closed with the antenna 20 as formed symmetrical setting；
It is described biasing and control circuit respectively with N number of first switch module 30 and N number of second switch module 40
Connection, the biasing and control circuit, for controlling a switch module in N number of first switch module 30 or N number of
Switch module conducting in the second switch module 40, for passing through only between the signal port and the antenna 20
The switching molding block transmission signals of one conducting.
It is N number of using the axis of antenna 20 as symmetrical center line in the design layout of RF switch chip in the present embodiment
The first switch module 30 and N number of second switch module 40 are arranged with the formed symmetrical of the antenna 20, that is to say as
3 first switch module 30 and 3 second switch modules 40 are set in RF switch chip shown in Fig. 1 with the formed symmetrical of antenna 20
It sets, it is to be understood that formed symmetrical of the multiple switch module on 20 axis both sides of antenna along antenna 20, symmetrical multiple switch
Modular structure is identical, any one switch in N number of first switch module 30 and N number of second switch module 40
Module can be symmetricly set on any position of RF switch chip according to this, herein without limitation.Pass through RF switch chip
In multiple switch module be arranged along 20 formed symmetrical of antenna, with reach RF switch chip switch domain it is compact put it is consistent,
Reduce the area of RF switch chip layout so that parasitic capacitance effectively reduces, thus control RF switch chip at
In the case where this, the response speed of RF switch is improved.
In the present embodiment, biasing and control circuit can control unlatching and the pass of RF switch chip in RF switch chip
It is disconnected, when a switch module of N number of first switch module and N number of second switch module in control RF switch chip
When conducting, it is all off just to control remaining switch, that is to say only one switching molding in synchronization, RF switch chip
Block conducting further can be decoder, such as 3-8 decoder in biasing and control circuit, 5-32 decoder etc. is same
At the moment, only one switch module can be connected under the selection of decoder.Thereby realize signal port and antenna it
Between by the switching molding block transmission signals that are uniquely connected, there is no switching moldings caused by multiple switch module simultaneous transmission of signals
Interfering with each other between block, the present embodiment, which realizes, reduces interfering with each other between each switch module, in signals transmission
In improve the response speed of RF switch.
Wherein, biasing and control circuit can be set in the gap of each switch and antenna, are also possible to setting and are penetrating
The other positions of frequency switch chip layout design, with N number of first switch module, N number of second switch module and antenna
Between maintain a certain distance, herein without limitation, biasing and control circuit can be convenient in the case where guaranteeing to reduce interference
The wiring of RF switch chip layout and the chip area for controlling RF switch chip, while also reducing biasing and control circuit pair
The interference of signal transmission.
In the present embodiment, when a switch module is connected, radiofrequency signal can be the switch module signal end from conducting
Mouth input is connected switch module and is transferred to antenna output, be also possible to receive external signal by antenna, through conducting switching molding
Block is transferred to signal port output, it is to be understood that is transferred to signal port output and refers to that antenna receives external signal warp
Conducting switch module is transferred to signal port and is output to internal circuit processing.
In the present embodiment, the quantity of switch module is 6 in RF switch chip, and the both sides of axis are respectively set in antennas
3, according to each switch module alignment as shown in Figure 1, it is to be understood that can also in the way of the arrangement of this domain
To be 8,10,12 etc., herein without limitation；Be also possible to it is staggered according to each switch as shown in Figure 2, in day
The both sides of line axis are respectively set 4, it is to be understood that by this domain arrangement in the way of be also possible to 6,10,
12 etc., herein without limitation.
In above-described embodiment, by being arranged between each switch module in RF switch chip along antenna formed symmetrical, with
And the control that biasing and control circuit open and shut off each switch module in RF switch chip, it realizes in control radio frequency
The area of switch chip reduces the signal interference in RF switch chip between each switch module, improves radiofrequency signal
Transmission quality, improve the response speed of RF switch chip.
In one embodiment, as shown in Figure 1, N number of first switch module 30 is at single setting, and orientation and N
A first switch module 30 is consistent with the symmetry axis extending direction of N number of second switch module 40, and N number of described second opens
The corresponding N number of first switch module 30 of module 40 is closed to be arranged.
In the present embodiment, the symmetry axis of N number of first switch module and N number of second switch module is antenna
N number of first switch module and N on axis both sides in antennas is arranged here using antenna axis extending direction as standard in axis
A second switch module along antenna central axis direction arrange, and N number of first switch module along antenna central axis direction at one
Row's setting, N number of second switch module is along the setting in a row of antenna central axis direction, it is to be understood that N number of described first opens
Closing module and the setting in a row of N number of second switch module is the setting aligned with each other of every two adjacent switch module, i.e.,
It is that the multiple switch module on antenna axis both sides is can be between each other according to the mutual proper alignment of each switch as shown in Figure 1
Setting, the domain compact arrangement that multiple switch module in RF switch chip is furthermore achieved is consistent, controls RF switch
The area of chip, so that parasitic capacitance effectively reduces, to improve and penetrate in the case where controlling RF switch chip cost
The response speed of frequency switch.
In one embodiment, as shown in Fig. 2, N number of first switch module 30 relative to the antenna 20 inside and outside two rows
Setting, and the symmetry axis of the orientation of each row and N number of first switch module 30 and N number of second switch module 40
Extending direction is consistent, and the first switch module 30 of inside and outside two rows mutually staggers setting in its orientation, and N number of described
The corresponding N number of first switch module 30 of two switch modules 40 is arranged.
In the present embodiment, the symmetry axis of N number of first switch module and N number of second switch module is antenna
N number of first switch module and N on axis both sides in antennas is arranged here using antenna axis extending direction as standard in axis
A second switch module along antenna central axis direction arrange, and N number of first switch module along antenna central axis direction at interior
Outer two rows of settings, N number of second switch module is along antenna central axis direction inside and outside two rows of settings, it is to be understood that N number of institute
The switch module for stating first switch module and N number of second switch module every one side of axis in antennas mutually staggers into inside and outside two
Row is arranged, and is that the multiple switch module on antenna axis both sides can be open according to each of as shown in Figure 2 between each other
The staggered setting of mutual relative angle is closed, the first switch module or the second switch module of inside and outside two rows are in its arrangement
The quantity mutually staggered on direction is one or more, and the version of multiple switch module in RF switch chip is furthermore achieved
Figure arrangement is consistent, controls the area of RF switch chip, reduces the cost of RF switch chip.
In one embodiment, the spacing in N number of first switch module between any two adjacent first switch modules
More than or equal to 150 microns；
And/or
Spacing in N number of second switch module between any two adjacent second switch modules is more than or equal to
150 microns.
In the present embodiment, the both sides of the axis in antennas of each switch module in RF switch chip are arranged,
The preset value that the distance between any two adjacent switch module is more than or equal to is 150 microns, to be further ensured that each open
It closes between module not by signal interference, signal cross-talk.If the distance between any two adjacent switch module less than 150 microns,
Signal interference or signal cross-talk will be generated between each switch module, influences the transmission quality of radiofrequency signal, reduce radio frequency
The response speed of switch chip.The present embodiment is greater than 150 microns using the distance between each switch module, further solves
Between each switch of RF switch chip the problem of signal interference, the response speed of RF switch chip is improved.
In one embodiment, as shown in figure 4, the switch module in the RF switch chip include rf inputs 310,
RF output end 320, switch unit circuit 330, gate voltage control circuit 340 and body pole control circuit 350, wherein
The switch unit circuit 330 includes multiple switch unit, and multiple switch units are sequentially connected in series in institute
It states between rf inputs 310 and the RF output end 320, each switch unit in the switch unit circuit 330
Grid is connected with each other, and forms public grid, and body pole is connected with each other, and forms common body pole；
The rf inputs 310 are connect with the source electrode of the switch unit circuit 330, the RF output end 320 with
The drain electrode of the switch unit circuit 330 connects, and the public grid and the grid voltage of the switch unit circuit 330 control
Circuit 340 connects, and the common body pole in the switch unit circuit 330 is connect with body pole control circuit 350.
In the present embodiment, rf inputs 310, switch unit circuit 330 and RF output end 320 are sequentially connected, grid
Voltage control circuit 340 is electrically connected with switch unit circuit 330, and radiofrequency signal is inputted from rf inputs 310, through switch unit
It after circuit 330, is exported from RF output end 320, that is to say bias and control electricity in the arrangement of RF switch chip layout here
The transmission of radiofrequency signal in the switch module of road control conducting, rf inputs 310 are the signal port of switch module, radio frequency
Output end 320 is to connect with signal wire, and radiofrequency signal is exported through RF output end 320, then is transferred to antenna through signal wire.
In one embodiment, gate voltage control circuit 340 includes public grid biasing resistor Rg, first resistor R1 and the
One capacitor C1；The first end of the public grid biasing resistor Rg is connect with the grid of multiple switch unit, the public grid
The second end of biasing resistor Rg is separately connected with the first end of the first resistor R1 and the first end of the first capacitor C1, institute
The second end for stating first resistor R1 is connect with the grid-control voltage Vg, the second end ground connection of the first capacitor C1.
In the present embodiment, due to being provided with public grid biasing resistor Rg, first resistor in gate voltage control circuit
R1 and first capacitor C1 can make the source voltage of each switch unit in switch unit circuit and drain voltage open
It closes and restores rapider when becoming shutdown from unlatching, so that the symmetry for quickly restoring direct current biasing point can be realized.Wherein, due to
When switching unlatching, the grid of all switch units all connects with gate voltage control circuit respectively in switch unit circuit
It connects, is gate bias resistor one parallel resistance of formation on all switch units, it is to be understood that all switches
The public grid biasing resistor Rg connection in parallel resistance and gate voltage control circuit that gate bias resistor on pipe is formed.
It realizes and improves external resistance value, improve the efficiency of grid equivalent AC impedance.
In the present embodiment, body pole control circuit 350 includes common body pole biasing resistor Rb, second resistance R2 and the second capacitor
C2；The first end of the common body pole biasing resistor Rb is connect with the body of each switch unit common end extremely interconnected, described
The first end point of the first end and the second capacitor C2 of the second end of common body pole biasing resistor Rb and the second resistance R2
It does not connect, the second end of the second end of the second resistance R2 and the second capacitor C2 are grounded respectively, solve RF switch
Chip inhibits the ability of noise, further solves the linear characteristic of switch.
6 switch units in each switch module of the present embodiment are sequentially connected in series to be exported in rf inputs and radio frequency
It is rf inputs connection if assigning each switch unit in switch unit circuit as level-one switch unit between end
To the source electrode of first order switch unit, the source electrode of the drain electrode connection second level switch unit of first order switch unit, the second level is opened
The source electrode of the drain electrode connection third level switch unit of unit is closed, the drain electrode connection fourth stage switch unit of third level switch unit
Source electrode, then the source electrode of the drain electrode connection level V switch unit of fourth stage switch unit, the drain electrode of level V switch unit connect
The source electrode of 6th grade of switch unit, the drain electrode of the 6th grade of switch unit are the RF output end of the switch.
It should be noted that switch as shown in Figure 4 can simplify as shown in Fig. 5, including rf inputs 310, grid
Control voltage Vg and RF output end 320.
In one embodiment, as shown in fig. 6, the switch unit includes the switching tube 510 that multiple common gates are connected in parallel,
It is understood that multiple switch pipe is connected in turn between input terminal and output end by source electrode and drain electrode, multiple switch pipe
Grid be connected in parallel with each other, wherein the input terminal and output end of switch unit be above-mentioned series connection switch in each open
The source electrode and drain electrode of pass, the switching tube 510 can be metal-oxide-semiconductor, triode, SOI transistor etc., herein without limitation.It needs
Illustrate, switch unit as shown in FIG. 6 can simplify as shown in Fig. 7, to facilitate in RF switch chip switch unit electricity
Each switch unit is connected in series with each other in road.
In one embodiment, each switch module in the first switch module and second switch module includes identical
The switch unit of quantity, each switch unit include the switching tube that the common gate of identical quantity is connected in parallel.
In the present embodiment, each switch module in first switch module and second switch module includes the number of switch unit
Amount is 6.It is understood that each switch module in first switch module and second switch module includes switch unit
Quantity be also possible to 9,12 etc., herein without limitation.
In one embodiment, the switching tube that each switch unit in each switch module includes is SOI transistor, described
The quantity of SOI transistor is 100, it is to be understood that the SOI switching tube in switch unit is also possible to 150,200
It is determined Deng, switching tube number in parallel according to the performance of pressure resistance and switch, herein without limitation.
In the present embodiment, 100 SOI transistors are connected in parallel, it is to be understood that in the SOI transistor being connected in parallel
Each SOI transistor source electrode be connected with each other, drain electrode be connected with each other, so as to improve being opened in RF switch chip switch unit
The voltage endurance capability for closing pipe, improves the overall performance of RF switch chip.
The foregoing is merely alternative embodiments of the invention, are not intended to limit the scope of the invention, all at this
Under the inventive concept of invention, using equivalent structure transformation made by description of the invention and accompanying drawing content, or directly/use indirectly
It is included in other related technical areas in scope of patent protection of the invention.
Claims (10)
1. a kind of RF switch chip, which is characterized in that opened including signal port, antenna, N number of first switch module, N number of second
Close module, biasing and control circuit, each switch module of N number of first switch module and N number of second switch module
It is connected in series between the signal port and the antenna by signal wire；N number of first switch module and N number of described
Two switch modules are arranged by formed symmetrical of the antenna；
The biasing and control circuit are connect with N number of first switch module and N number of second switch module respectively, described
Biasing and control circuit, for controlling a switch module or N number of second switch in N number of first switch module
Switch module conducting in module, for the switch module between the signal port and the antenna by being uniquely connected
Transmit signal.
2. RF switch chip as described in claim 1, which is characterized in that N number of first switch module at single setting,
And orientation is consistent with the symmetry axis extending direction of N number of first switch module and N number of second switch module, it is N number of
The second switch module corresponds to N number of first switch module setting.
3. RF switch chip as described in claim 1, which is characterized in that N number of relatively described day of first switch module
Line is arranged inside and outside two rows, and the orientation of each row and N number of first switch module and N number of second switch module
Symmetry axis extending direction it is consistent, the first switch module of inside and outside two rows mutually staggers setting in its orientation, N number of
The second switch module corresponds to N number of first switch module setting.
4. RF switch chip as claimed in claim 3, which is characterized in that the first switch module of inside and outside two rows is at it
The quantity mutually staggered in orientation is one or more, and N number of second switch module corresponds to N number of first switch
Module setting.
5. the RF switch chip as described in claim 1-4 any one, which is characterized in that N number of first switch module
In spacing between any two adjacent first switch modules be more than or equal to 150 microns；
And/or
It is micro- that spacing in N number of second switch module between any two adjacent second switch modules is more than or equal to 150
Rice.
6. RF switch chip as described in claim 1, which is characterized in that the switch module packet in the RF switch chip
Include rf inputs, RF output end, switch unit circuit, gate voltage control circuit and body pole control circuit, wherein
The switch unit circuit includes multiple switch unit, and multiple switch units are sequentially connected in series defeated in the radio frequency
Enter between end and the RF output end, the grid of each switch unit in the switch unit circuit is connected with each other, and is formed
Public grid, body pole are connected with each other, and form common body pole；
The rf inputs are connect with the source electrode of the switch unit circuit, the RF output end and switch unit electricity
The drain electrode on road connects, and the public grid of the switch unit circuit is connect with the gate voltage control circuit, and the switch is single
Common body pole in first circuit is connect with body pole control circuit.
7. RF switch chip as claimed in claim 6, which is characterized in that the gate voltage control circuit includes common gate
Pole biasing resistor, first resistor and first capacitor；
The first end of the public grid biasing resistor is connect with the grid of multiple switch units, the public grid biasing
The second end of resistance is separately connected with the first end of the first resistor and the first end of the first capacitor, the first resistor
Second end connect with the grid-control voltage, the second end of first capacitor ground connection；
Body pole control circuit includes common body pole biasing resistor, second resistance and the second capacitor；
The first end of common body pole biasing resistor is connect with the body of each switching tube common end extremely interconnected, described public
The second end of body pole biasing resistor and the first end of the first end of the second resistance and second capacitor are separately connected, described
The second end of second resistance and the second end of second capacitor are grounded respectively.
8. RF switch chip as described in claim 1, which is characterized in that the first switch module and second switch module
In each switch module include identical quantity switch unit, each switch unit includes the total grid of identical quantity
The switching tube that pole is connected in parallel.
9. RF switch chip as claimed in claim 8, which is characterized in that the first switch module and second switch module
In each switch module include the switch unit quantity be 6.
10. RF switch chip as claimed in claim 8, which is characterized in that the switch in each switch unit
Pipe is SOI transistor, and the quantity of the SOI transistor is 100.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811463780.8A CN109450419A (en) | 2018-11-30 | 2018-11-30 | RF switch chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811463780.8A CN109450419A (en) | 2018-11-30 | 2018-11-30 | RF switch chip |
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| CN109450419A true CN109450419A (en) | 2019-03-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811463780.8A Pending CN109450419A (en) | 2018-11-30 | 2018-11-30 | RF switch chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118471937A (en) * | 2024-06-20 | 2024-08-09 | 睿思微系统(烟台)有限公司 | Radio frequency switch chip and radio frequency switch module |
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