CN110350900A - A kind of single-pole single-throw switch (SPST) and single-pole double-throw switch (SPDT) - Google Patents
A kind of single-pole single-throw switch (SPST) and single-pole double-throw switch (SPDT) Download PDFInfo
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- CN110350900A CN110350900A CN201910565541.1A CN201910565541A CN110350900A CN 110350900 A CN110350900 A CN 110350900A CN 201910565541 A CN201910565541 A CN 201910565541A CN 110350900 A CN110350900 A CN 110350900A
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- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
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- 239000013078 crystal Substances 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The invention discloses a kind of single-pole single-throw switch (SPST) and single-pole double-throw switch (SPDT)s.The single-pole single-throw switch (SPST) includes transistor, inductance and capacitor；The first end of transistor and one end of inductance connect, and the other end of inductance and one end of capacitor connect, and the other end of capacitor and the third end of transistor connect；The second end of transistor is connect with control voltage；The transistor turns when controlling voltage and taking high level, inductance and capacitor in parallel, form parallel resonance at centre frequency at this time, switch in an off state.When control voltage takes low level, transistor is turned off at this time, can be equivalent to shutdown capacitor, turns off capacitor and inductance forms series resonance at centre frequency, switch in the conductive state.As it can be seen that switch of the invention, when in the conductive state, the shutdown capacitor of transistor of the invention is not only without reducing switch performance, instead as a part of series resonance, the performance of switch is improved, and, strings of transistors joins in circuit, has very strong power handling capability.
Description
Technical field
The present invention relates to field of wireless communication, in particular to a kind of single-pole single-throw switch (SPST) and single-pole double-throw switch (SPDT).
Background technique
With the fast development of wireless communication technique, requirement of the modern wireless communication systems for integrated level and cost is more next
It is higher.Complementary metal oxide semiconductor (CMOS) technology has at low cost, high reliability.Most importantly CMOS skill
Art can be integrated on one chip by all modules of wireless transceiver system, substantially increases integrated level.Therefore, it is based on CMOS
The phased array receive-transmit system of technique increasingly becomes research hotspot in recent years.
But the performance of the switch in phased array receive-transmit system, the performance of phased array receive-transmit system is directly affected, in order to
Improve the performance of switch, scientific and technological circle and industry have had investigated many constructions of switch.Application number 201710225103.1,
Application publication number CN106972845A provides a kind of CMOS RF switch, and strings of transistors is utilized and folds technology, is changed by dividing
The power handling capability of kind RF switch, and direct current biasing and the suspension of grid body are provided for transistor using big resistance, have preferable
Insertion Loss and isolation.It is substantially reduced compared to other process costs, there is the high-performance as other techniques at the same time.
But with the raising of frequency, the influence of the electric conductivity of transistor substrate will be more and more obvious, meanwhile, transistor
Shutdown capacitor leaks also more obvious caused by signal.In order to make switch application in higher frequency range (such as millimeter wave frequency
Section), it can reduce the size of transistor.But power-performance in this way can be limited again.
Summary of the invention
The object of the present invention is to provide a kind of single-pole single-throw switch (SPST) and single-pole double-throw switch (SPDT)s, to meet phased array receive-transmit system
High band operation and high power performance demand.
To achieve the above object, the present invention provides following schemes:
The present invention provides a kind of single-pole single-throw switch (SPST), and the single-pole single-throw switch (SPST) includes transistor, inductance and capacitor；
The first end of the transistor is connect with one end of the inductance, and the one of the other end of the inductance and the capacitor
End connection, forms the output end of single-pole single-throw switch (SPST)；The other end of the capacitor is connect with the third end of the transistor, is formed
The input terminal of single-pole single-throw switch (SPST)；
The second end of the transistor is connect with control voltage；
The capacitance C of the capacitor, the inductance value L of the inductance and centre frequency f0Relationship are as follows:
The shutdown capacitance C of the transistorOFF, the inductance inductance value L and centre frequency f0Relationship are as follows:
Optionally, the single-pole single-throw switch (SPST) further includes floating gate resistance；
The floating gate resistance is connected between control power supply and the second end of the transistor.
Optionally, the transistor is bipolar transistor, emitter, base stage and the collector of the bipolar transistor
Respectively correspond the first end, second end and third end of the transistor.
Optionally, the transistor is field effect transistor, source electrode, grid and the drain electrode difference of the field effect transistor
First end, second end and the third end of the corresponding transistor.
Optionally, the centre frequency is 26GHz.
The present invention also provides a kind of single-pole double-throw switch (SPDT) applied to phased array receive-transmit system, the single-pole double-throw switch (SPDT) packet
Include two single-pole single-throw switch (SPST)s, respectively the first single-pole single-throw switch (SPST) and the second single-pole single-throw switch (SPST)；
The input terminal of the input terminal of first single-pole single-throw switch (SPST) and second single-pole single-throw switch (SPST) respectively with antenna
Connection；
The output end of first single-pole single-throw switch (SPST) and the output end of transmitting line connect, and second single-pole single-throw(SPST is opened
The output end of pass is connect with the input terminal for receiving circuit.
Optionally, the centre frequency of the centre frequency of first single-pole single-throw switch (SPST) and second single-pole single-throw switch (SPST)
It is equal with the transmitting-receiving frequency of the antenna.
The specific embodiment provided according to the present invention, the invention discloses following technical effects:
The invention discloses a kind of single-pole single-throw switch (SPST) and single-pole double-throw switch (SPDT)s.The single-pole single-throw switch (SPST) includes crystal
Pipe, inductance and capacitor；The first end of the transistor is connect with one end of the inductance, the other end of the inductance and the electricity
One end of appearance connects, and the other end of the capacitor is connect with the third end of the transistor；The second end and control of the transistor
Voltage connection processed；The transistor turns when controlling voltage and taking high level, inductance and capacitor in parallel at this time, the shape at centre frequency
At parallel resonance, switch in an off state.When control voltage takes low level, transistor is turned off at this time, can be equivalent to turn off
Capacitor, turns off capacitor and inductance forms series resonance at centre frequency, switchs in the conductive state.As it can be seen that of the invention opens
It closes when in the conductive state, the shutdown capacitor of transistor of the invention is not only without reducing switch performance, instead as series connection
A part of resonance improves the performance of switch, moreover, strings of transistors connection is in circuit, has very strong power handling capability.
Floating gate resistance R is added in switch of the invention, can further decrease the insertion loss of switch, and improve the power of switch
Processing capacity.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without any creative labor, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the structure chart of phased array receive-transmit system provided by the invention；
Fig. 2 is a kind of circuit diagram of single-pole single-throw switch (SPST) provided by the invention；
Fig. 3 is a kind of schematic diagram of the off state of single-pole single-throw switch (SPST) provided by the invention；
Fig. 4 is a kind of schematic diagram of the on state of single-pole single-throw switch (SPST) provided by the invention；
Fig. 5 is a kind of circuit diagram of the single-pole double-throw switch (SPDT) applied to phased array receive-transmit system provided by the invention；
Fig. 6 provides the analogous diagram of the power handling capability of single-pole double-throw switch (SPDT) for the present invention.
Specific embodiment
The object of the present invention is to provide a kind of single-pole single-throw switch (SPST) and single-pole double-throw switch (SPDT)s, to meet phased array receive-transmit system
High band operation and high power performance demand.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Mode is applied to be described in further detail invention.
Fig. 1 is a simple phased array receive-transmit system, and single-pole double-throw switch (SPDT) is important component therein, its three
A port is connected respectively to antenna, the input terminal of low-noise amplifier (LNA) and the output end of power amplifier (PA), can control
System processed receives and the switching of transmitting link.
In order to meet the high band operation and high power performance demand of phased array receive-transmit system, the present invention provides a kind of hilted broadsword
Single-throw switch, as shown in Fig. 2, single-pole single-throw switch (SPST) of the invention includes: transistor M0, inductance L0With capacitor C0；The hilted broadsword list
Throw switch further includes floating gate resistance R0；The floating gate resistance R0It is connected to the control power supply and the transistor M0Second end
Between.The transistor M0First end and the inductance L0One end connection, the inductance L0The other end and the capacitor C0
One end connection, form the output end of single-pole single-throw switch (SPST)；The capacitor C0The other end and the transistor M0Third end connect
It connects, forms the input terminal of single-pole single-throw switch (SPST)；
The transistor M0For bipolar transistor or field effect transistor, as the transistor M0For bipolar transistor
When, emitter, base stage and the collector of the bipolar transistor respectively correspond the transistor M0First end, second end and
Third end.As the transistor M0When for field effect transistor, the source electrode of the field effect transistor, grid and drain electrode are right respectively
Answer the transistor M0First end, second end and third end.
The working principle of single-pole single-throw switch (SPST) of the present invention are as follows: control voltage VCTransistor M when taking high level0Conducting,
Its equivalent circuit is as shown in figure 3, due to transistor M0Conducting resistance very little, so inductance L can be regarded as at this time0With capacitor C0And
Connection, the appropriate value for choosing inductance L and capacitor C, makes capacitor C0Capacitance C, the inductance L0Inductance value L and centre frequency f0
Relationship are as follows:The centre frequency is 26GHz；Inductance capacitance can be made to be formed at centre frequency (26GHz)
Parallel resonance, and impedance of such a series resonant network at centre frequency (26GHz) is infinitely great, so opening at this time
It closes in an off state.As control voltage VCWhen taking low level, equivalent circuit is as shown in figure 4, transistor M at this time0Shutdown, can
It is equivalent to shutdown capacitor COFF.It can be by choosing transistor M1Different sizes come adjust transistor shutdown capacitor COFFIt is big
It is small, make the transistor M0Shutdown capacitance COFF, the inductance L0Inductance value L and centre frequency f0Relationship are as follows:It can make to turn off capacitor COFFSeries resonance is formed at centre frequency with inductance L, this series resonance is in
Impedance at frequency of heart is 0, therefore VCSwitch conduction when for low level.The addition of floating gate resistance R can further decrease switch
Insertion loss, and improve the power handling capability of switch.
The present invention also provides a kind of single-pole double-throw switch (SPDT) applied to phased array receive-transmit system, the hilted broadswords as shown in Figure 5
Commutator includes two single-pole single-throw switch (SPST)s, respectively the first single-pole single-throw switch (SPST) and the second single-pole single-throw switch (SPST)；Described
The input terminal of the input terminal of one single-pole single-throw switch (SPST) and second single-pole single-throw switch (SPST) is connect with antenna respectively；Described first is single
The output end of monopole single throw switch and the output end of transmitting line connect, the output end and reception electricity of second single-pole single-throw switch (SPST)
The input terminal on road connects.The centre frequency of the centre frequency of first single-pole single-throw switch (SPST) and second single-pole single-throw switch (SPST)
It is equal with the transmitting-receiving frequency of the antenna.
Wherein, the first single-pole single-throw switch (SPST) includes: transistor M1, inductance L1, capacitor C1With floating gate resistance R1；The floating gate
Resistance R1It is connected to the control power supply and the transistor M1Second end between.The transistor M1First end with it is described
Inductance L1One end connection, the inductance L1The other end and the capacitor C1One end connection, formed the first single-pole single-throw switch (SPST)
Output end, the capacitor C1The other end and the transistor M1Third end connection, formed the first single-pole single-throw switch (SPST) it is defeated
Enter end.
Second single-pole single-throw switch (SPST) includes: transistor M2, inductance L2, capacitor C2With floating gate resistance R2；The floating gate resistance R2
It is connected to the control power supply and the transistor M2Second end between.The transistor M2First end and the inductance L2
One end connection, the inductance L2The other end and the capacitor C2One end connection, formed the second single-pole single-throw switch (SPST) output
End, the capacitor C2The other end and the transistor M2Third end connection, formed the second single-pole single-throw switch (SPST) input terminal.
The working principle of single-pole double-throw switch (SPDT) of the invention and the working principle of single-pole single-throw switch (SPST) are similar, when RX mode work
When making, VCRLow level is taken, forms series resonance, impedance 0 between the end RX and the end ANT.Meanwhile VCTTake high level, the end ANT and
Parallel resonance is formed between the end TX, impedance is infinitely great, to hinder signals leakiness to the end TX.When the work of TX mode, VCTIt takes low
Level forms series resonance, impedance 0 between the end TX and the end ANT.Meanwhile VCRHigh level is taken, is formed between the end ANT and the end RX
Parallel resonance, impedance is infinitely great, to hinder signals leakiness to the end RX.
As shown in fig. 6, the analogous diagram of single-pole double-throw switch (SPDT) power handling capability of the invention, the abscissa representative of Fig. 6 is opened
Work is closed in TX mode, the input power (unit is dBm) at the end TX, ordinate represents the output power at the end RX at this time, it is seen that
The input 1dB compression point of the switch is greater than 22dBm.As shown in Figure 6, switch proposed by the invention has at very strong power
Reason ability.And it has the advantages that
1. work is at millimeter wave frequency band (26GHz).
2. the shutdown capacitor of transistor will be greatly reduced the performance of switch for traditional switch.And in the present invention, crystal
The shutdown capacitor of pipe not only improves the performance of switch instead as a part of series resonance without reducing switch performance.
3, in the present invention, strings of transistors connection in circuit, improves the power handling capability of circuit.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
Specific examples are used herein to describe the principles and implementation manners of the present invention, the explanation of above embodiments
Method and its core concept of the invention are merely used to help understand, described embodiment is only that a part of the invention is real
Example is applied, instead of all the embodiments, based on the embodiments of the present invention, those of ordinary skill in the art are not making creation
Property labour under the premise of every other embodiment obtained, shall fall within the protection scope of the present invention.
Claims (7)
1. a kind of single-pole single-throw switch (SPST), which is characterized in that the single-pole single-throw switch (SPST) includes transistor, inductance and capacitor；
The first end of the transistor is connect with one end of the inductance, and one end of the other end of the inductance and the capacitor connects
It connects, forms the output end of single-pole single-throw switch (SPST)；The other end of the capacitor is connect with the third end of the transistor, forms hilted broadsword
The input terminal of single-throw switch；
The second end of the transistor is connect with control voltage；
The capacitance C of the capacitor, the inductance value L of the inductance and centre frequency f0Relationship are as follows:
The shutdown capacitance C of the transistorOFF, the inductance inductance value L and centre frequency f0Relationship are as follows:
2. single-pole single-throw switch (SPST) according to claim 1, which is characterized in that the single-pole single-throw switch (SPST) further includes floating gate electricity
Resistance；
The floating gate resistance is connected between control power supply and the second end of the transistor.
3. single-pole single-throw switch (SPST) according to claim 1, which is characterized in that the transistor is bipolar transistor, institute
Emitter, base stage and the collector for stating bipolar transistor respectively correspond the first end of the transistor, second end and third end.
4. single-pole single-throw switch (SPST) according to claim 1, which is characterized in that the transistor is field effect transistor, institute
The source electrode, grid and drain electrode for stating field effect transistor respectively correspond the first end of the transistor, second end and third end.
5. single-pole single-throw switch (SPST) according to claim 1, which is characterized in that the centre frequency is 26GHz.
6. a kind of single-pole double-throw switch (SPDT) applied to phased array receive-transmit system, which is characterized in that the single-pole double-throw switch (SPDT) includes
Two described in any item single-pole single-throw switch (SPST)s of claim 1-5, respectively the first single-pole single-throw switch (SPST) and the second single-pole single-throw(SPST
Switch；
The input terminal of the input terminal of first single-pole single-throw switch (SPST) and second single-pole single-throw switch (SPST) is connect with antenna respectively；
The output end of first single-pole single-throw switch (SPST) and the output end of transmitting line connect, second single-pole single-throw switch (SPST)
Output end is connect with the input terminal for receiving circuit.
7. a kind of single-pole double-throw switch (SPDT) applied to phased array receive-transmit system according to claim 6, which is characterized in that institute
Receipts of the centre frequency of the centre frequency and second single-pole single-throw switch (SPST) of stating the first single-pole single-throw switch (SPST) with the antenna
It is equal to send out frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910565541.1A CN110350900A (en) | 2019-06-27 | 2019-06-27 | A kind of single-pole single-throw switch (SPST) and single-pole double-throw switch (SPDT) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910565541.1A CN110350900A (en) | 2019-06-27 | 2019-06-27 | A kind of single-pole single-throw switch (SPST) and single-pole double-throw switch (SPDT) |
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| Publication Number | Publication Date |
|---|---|
| CN110350900A true CN110350900A (en) | 2019-10-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910565541.1A Pending CN110350900A (en) | 2019-06-27 | 2019-06-27 | A kind of single-pole single-throw switch (SPST) and single-pole double-throw switch (SPDT) |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113572466A (en) * | 2021-07-01 | 2021-10-29 | 陈力生 | Symmetrical single-pole double-throw switch based on power distribution and impedance transformation network technology |
| CN113852394A (en) * | 2021-12-01 | 2021-12-28 | 华南理工大学 | Filtering switch chip and wireless communication transceiver |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010049265A1 (en) * | 1998-10-07 | 2001-12-06 | Murata Manufacturing Co., Ltd. | SPST switch, SPDT switch, and communication apparatus using the SPDT switch |
| JP2007174480A (en) * | 2005-12-26 | 2007-07-05 | Murata Mfg Co Ltd | High frequency switch device and communication apparatus |
| US20090189718A1 (en) * | 2008-01-25 | 2009-07-30 | National Taiwan University | Transistor single-pole-single-throw circuit device |
| CN109194318A (en) * | 2017-09-18 | 2019-01-11 | 胡建全 | A kind of fully integrated single-pole double-throw switch (SPDT) circuit |
-
2019
- 2019-06-27 CN CN201910565541.1A patent/CN110350900A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010049265A1 (en) * | 1998-10-07 | 2001-12-06 | Murata Manufacturing Co., Ltd. | SPST switch, SPDT switch, and communication apparatus using the SPDT switch |
| JP2007174480A (en) * | 2005-12-26 | 2007-07-05 | Murata Mfg Co Ltd | High frequency switch device and communication apparatus |
| US20090189718A1 (en) * | 2008-01-25 | 2009-07-30 | National Taiwan University | Transistor single-pole-single-throw circuit device |
| CN109194318A (en) * | 2017-09-18 | 2019-01-11 | 胡建全 | A kind of fully integrated single-pole double-throw switch (SPDT) circuit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113572466A (en) * | 2021-07-01 | 2021-10-29 | 陈力生 | Symmetrical single-pole double-throw switch based on power distribution and impedance transformation network technology |
| CN113572466B (en) * | 2021-07-01 | 2024-02-20 | 西安电子科技大学杭州研究院 | Symmetrical single-pole double-throw switch based on power distribution and impedance transformation network technology |
| CN113852394A (en) * | 2021-12-01 | 2021-12-28 | 华南理工大学 | Filtering switch chip and wireless communication transceiver |
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