CN104993812B - High-isolation RF switch with trapper structure - Google Patents
High-isolation RF switch with trapper structure Download PDFInfo
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- CN104993812B CN104993812B CN201510430671.6A CN201510430671A CN104993812B CN 104993812 B CN104993812 B CN 104993812B CN 201510430671 A CN201510430671 A CN 201510430671A CN 104993812 B CN104993812 B CN 104993812B
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Abstract
The invention discloses a kind of high-isolation RF switch with trapper structure, it includes a T-shaped trapper unit of basic matched single-pole single-throw(SPST RF switching unit and a bridge.The present invention adds resistance R on the basis of basic matched single-pole single-throw(SPST RF switching unit7b, bonding wire stray inductance L2b, bonding wire stray inductance L4bWith inductance L3b.When RF switch is OFF state, inductance L2b, inductance L4bWith inductance L3bBe in series the inductance L to be formed2b+3b+4bWith metal-oxide-semiconductor M1b, metal-oxide-semiconductor M2bThe parasitic capacitance formed in OFF state between source-drain electrode, with the metal-oxide-semiconductor M4b dead resistances formed in conducting state between source-drain electrode and resistance R7bConstitute the T-shaped trapper structure of bridge.By adjusting the T-shaped trapper resistance R of bridge7bWith inductance L3bValue can targetedly determine needed for suppress frequency, the isolation that high 10~15dB is switched than conventional radio frequency can be obtained in selected frequency range using this topological structure.
Description
Technical field
The present invention relates to a kind of RF switch, more particularly to a kind of high-isolation RF switch with trapper structure,
All kinds of RF switch fields that it is directly applied in microwave IC.
Background technology
RF switch is the control device for controlling radio signal transmission path, is that the electronic systems such as communication realize high property
The critical component of energy, in honeycomb GSM, UMTS, cable modem, direct broadcast system, point-to-point and Point To Multipoint Multicast
Widely used in the military field such as the business RF communication systems such as system and radar, electronic countermeasure, with information transfer
The increase of complex characteristics, the requirement to RF switch isolation, bandwidth of operation, integrability is also improved constantly.
Conventional radio frequency is switched as shown in figure 1, due to generally using standard CMOS/BiCMOS technique limitation so that radio frequency is opened
The reference ground of pass needs to be connected to ground by bonding wire, due to the influence of bonding wire stray inductance, causes the isolation of RF switch
Degree reduction.Parasitic parameter between the reference ground of RF switch is connected to ground is smaller, and the influence to RF switch performance is smaller.
In practice, the stray inductance L that the bonding wire being connected to ground is introduced1aValue is generally 0.3~0.5nH.
Isolation directly determines RF switch performance and application as the critical index of RF switch, in order to obtain
More preferable isolation index, the technique such as GaAs/GaN introduces to ground through hole to replace bonding wire, achieves preferable effect.But
Because GaAs/GaN techniques are present, cost is higher, and control level is high, the more low deficiency of integrated level, as signal processing system is more next
More to low price, low pressure, integrated development, its application is very limited.
And under standard processing conditions, it is general to use increase RF switch string simultaneously in order to improve the isolation of RF switch
Join the method for FET transistor series, such a process increases the complexity of RF switch mechanism, not only can increasing circuit domain
Area, and due to adding series connection and FET transistor series in parallel on signal path, cause insertion loss to become big, work band
Width narrows, a series of problems, such as input/output standing-wave ratio is deteriorated.
The content of the invention
In consideration of it, the present invention provides a kind of high-isolation RF switch with trapper structure, by using transistor
OFF state parasitic capacitance, makes RF switching unit be combined with the T-shaped trapper unit of bridge, make RF switch selected frequency range every
It is improved from degree.
To reach above-mentioned purpose, the present invention provides following technical scheme：A kind of high-isolation with trapper structure is penetrated
Frequency is switched, including single-pole single-throw(SPST RF switching unit, and the single-pole single-throw(SPST RF switching unit includes metal-oxide-semiconductor M1b, metal-oxide-semiconductor M2b、
Metal-oxide-semiconductor M3b, metal-oxide-semiconductor M4b, metal-oxide-semiconductor M5bRespectively with metal-oxide-semiconductor M4bSource electrode, metal-oxide-semiconductor M5bSource electrode connection bonding wire it is parasitic
Inductance L1b, the RF switch is also including the T-shaped trap wave unit of bridge, and the T-shaped trap wave unit of bridge includes bonding wire stray inductance
L2b, inductance L3b, bonding wire stray inductance L4b, resistance R7b, metal-oxide-semiconductor M1bWith metal-oxide-semiconductor M2bIn OFF state between source electrode and drain electrode
The parasitic capacitance and metal-oxide-semiconductor M of formation4bThe dead resistance formed in conducting state between source electrode and drain electrode；The bonding wire is parasitic
Inductance L2b, inductance L3b, bonding wire stray inductance L4bMetal-oxide-semiconductor M is parallel to after being sequentially connected1bDrain electrode and metal-oxide-semiconductor M2bSource electrode
Between, bonding wire stray inductance L2bWith metal-oxide-semiconductor M1bDrain electrode connection, bonding wire stray inductance L4bWith metal-oxide-semiconductor M2bSource electrode connect
Connect, the resistance R7bIt is series at metal-oxide-semiconductor M4bSource electrode and bonding wire stray inductance L1bBetween, bonding wire stray inductance L1bGround connection.
It is preferred that, the single-pole single-throw(SPST RF switching unit also includes resistance R1b, resistance R2b, resistance R3b, resistance R4b, electricity
Hinder R5bAnd resistance R6b, the metal-oxide-semiconductor M1bDrain electrode and signal input part VINConnection, metal-oxide-semiconductor M1bSource electrode and metal-oxide-semiconductor M2b's
Drain electrode connection, metal-oxide-semiconductor M2bSource electrode and metal-oxide-semiconductor M3bDrain electrode connection, metal-oxide-semiconductor M3bSource electrode be connected with signal output part, it is described
Metal-oxide-semiconductor M1bGrid through resistance R1bIt is connected with the first control end, metal-oxide-semiconductor M2bGrid through resistance R2bIt is connected with the first control end,
Metal-oxide-semiconductor M2bGrid through resistance R3bIt is connected with the first control end；The metal-oxide-semiconductor M4bDrain electrode respectively with metal-oxide-semiconductor M1bSource electrode,
Metal-oxide-semiconductor M2bDrain electrode connection, metal-oxide-semiconductor M4bGrid through resistance R4bIt is connected with the second control end；The metal-oxide-semiconductor M5bDrain electrode point
Not with metal-oxide-semiconductor M2bSource electrode, metal-oxide-semiconductor M3bDrain electrode connection, metal-oxide-semiconductor M5bGrid through resistance R5bIt is connected with the second control end,
Metal-oxide-semiconductor M5bSource electrode through bonding wire stray inductance L1bGround connection；The resistance R6bIt is parallel to metal-oxide-semiconductor M3bSource electrode and drain electrode between.
As a result of above technical scheme, the present invention has following advantageous effects：
The present invention adds resistance R on the basis of basic matched single-pole single-throw(SPST RF switching unit7b, bonding wire it is parasitic
Inductance L2b, bonding wire stray inductance L4bWith inductance L3b.When RF switch is OFF state, inductance L2b, inductance L4bWith inductance L3b
Be in series the inductance L to be formed2b+3b+4bWith metal-oxide-semiconductor M1b, metal-oxide-semiconductor M2bThe parasitic capacitance formed in OFF state between source-drain electrode, with
Metal-oxide-semiconductor M4bThe dead resistance and resistance R formed in conducting state between source-drain electrode7bConstitute the T-shaped trapper structure of bridge.By adjusting
The whole T-shaped trapper resistance R of bridge7bWith inductance L3bValue can targetedly determine needed for suppress frequency, use it is this topology knot
Structure can obtain the isolation that high 10~15dB is switched than conventional radio frequency in selected frequency range.
Because circuit of the present invention is when RF switch is conducting state, the T-shaped trapper unit metal-oxide-semiconductor M of bridge is constituted1bAnd metal-oxide-semiconductor
M2bParasitic parameter now is mainly the dead resistance between source-drain electrode, and resistance value is very small, by optimizing inductance L3bValue,
Inductance L2b+3b+4bBranch impedance value is much larger than RF switch signal path, therefore does not interfere with RF switch insertion loss etc. substantially
Electrical characteristics, it is to avoid insertion loss, input 1dB compression points, input voltage standing-wave ratio, output voltage standing-wave ratio, which deteriorate etc., asks
Topic.
Brief description of the drawings
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with accompanying drawing the present invention is made into
The detailed description of one step, wherein：
Fig. 1 is conventional radio frequency on-off circuit figure；
Fig. 2 has the high-isolation radio-frequency switch circuit figure of trapper structure for the present invention.
Fig. 3 is the T-shaped trapper unit of bridge of the invention.
Fig. 4 is the present invention and conventional radio frequency switch insertion loss contrast schematic diagram.
Fig. 5 is the present invention and conventional radio frequency switch isolation degree contrast schematic diagram.
Embodiment
Below with reference to accompanying drawing, the preferred embodiments of the present invention are described in detail；It should be appreciated that preferred embodiment
Only for the explanation present invention, the protection domain being not intended to be limiting of the invention.
The circuit diagram for the high-isolation RF switch with trapper structure that the present invention is embodied is as shown in Figure 2.It
Including a T-shaped trapper unit of basic matched single-pole single-throw(SPST RF switching unit and a bridge.
The single-pole single-throw(SPST RF switching unit includes metal-oxide-semiconductor M1b, metal-oxide-semiconductor M2b, metal-oxide-semiconductor M3b, metal-oxide-semiconductor M4b, metal-oxide-semiconductor
M5b, resistance R1b, resistance R2b, resistance R3b, resistance R4b, resistance R5b, resistance R6bWith bonding wire stray inductance L1b.Wherein, metal-oxide-semiconductor
M1bDrain electrode and signal input part VINIt is connected, metal-oxide-semiconductor M1bSource electrode respectively with metal-oxide-semiconductor M2bDrain electrode, metal-oxide-semiconductor M4bDrain electrode phase
Even, metal-oxide-semiconductor M2bSource electrode respectively with metal-oxide-semiconductor M3bDrain electrode, metal-oxide-semiconductor M5bDrain electrode, resistance R6bOne end be connected, tie point is
D, metal-oxide-semiconductor M3bSource electrode respectively with resistance R6bThe other end, signal output part VOUTConnection, metal-oxide-semiconductor M4bSource electrode and resistance R7b
One end is connected, resistance R7bThe other end respectively with metal-oxide-semiconductor M5bSource electrode, bonding wire stray inductance L1bOne end is connected, and tie point is C,
Bonding wire stray inductance L1bThe other end is grounded.Resistance R1bOne end and metal-oxide-semiconductor M1bGrid is connected, resistance R1bThe other end difference
With the first control end B, resistance R2bOne end, resistance R3bOne end connection, resistance R2bThe other end and metal-oxide-semiconductor M2bGrid connect
Connect, resistance R3bThe other end and metal-oxide-semiconductor M3bGrid connection, resistance R4bOne end and metal-oxide-semiconductor M4bGrid be connected, resistance R4b
The other end be connected with the first control end A, resistance R5bOne end and metal-oxide-semiconductor M5bGrid be connected, resistance R5bThe other end and
One control end A connections.
The T-shaped trapper unit of bridge includes bonding wire stray inductance L2b, inductance L3b, bonding wire stray inductance L4b, resistance
R7b, metal-oxide-semiconductor M1bWith metal-oxide-semiconductor M2bThe parasitic capacitance formed in OFF state between source electrode and drain electrode, metal-oxide-semiconductor M4bIn conducting state
The dead resistance formed between source electrode and drain electrode.Wherein, bonding wire stray inductance L2bOne end and metal-oxide-semiconductor M1bDrain electrode and letter
Number input VINConnection, bonding wire stray inductance L2bThe other end and inductance L3bOne end be connected, inductance L3bThe other end and key
Plying stray inductance L4bOne end be connected, bonding wire stray inductance L4bThe other end be connected with D points.
The operation principle of the circuit of the present invention is as follows：
The on off state of RF switch is controlled by the first control end B and the second control end A, as metal-oxide-semiconductor M1b, metal-oxide-semiconductor
M2b, metal-oxide-semiconductor M3bFor conducting state, metal-oxide-semiconductor M4bWith metal-oxide-semiconductor M5bDuring for off state, RF switch working condition is conducting, is penetrated
Frequency signal passes through VINPort enters after RF switch, and during due to metal-oxide-semiconductor for conducting state, Low ESR is shown as between source electrode and drain electrode
Resistance, and now bonding wire stray inductance L2b, bonding wire stray inductance L4bWith inductance L3bBe in series the inductance L to be formed2b+3b+4bIt is right
High impedance is presented in radiofrequency signal, and radiofrequency signal passes sequentially through metal-oxide-semiconductor M1bDrain electrode and source electrode, metal-oxide-semiconductor M2bDrain electrode and source electrode reach D
Point.Due to resistance R6bGeneral value is 50 ohm, relative to the metal-oxide-semiconductor M of conducting state3bFor high impedance, radiofrequency signal is led to from D points
Cross M3bDrain electrode and source electrode, from VOUTPort is exported.
As metal-oxide-semiconductor M1b, metal-oxide-semiconductor M2b, metal-oxide-semiconductor M3bFor off state, metal-oxide-semiconductor M4bWith metal-oxide-semiconductor M5bDuring for conducting state, penetrate
Frequency switch working state is shut-off, and the radiofrequency signal of reflection passes through VOUTPort enters after RF switch, due to metal-oxide-semiconductor M3bTo close
Disconnected state, is presented high-impedance state to radiofrequency signal, and with metal-oxide-semiconductor M3bResistance R in parallel6bTypically about 50 ohm, play impedance matching
Effect, radiofrequency signal is by resistance R6bPass through.Metal-oxide-semiconductor M2bHigh-impedance state, inductance L is presented for shut-off2b+3b+4bBranch impedance value is also long-range
In the metal-oxide-semiconductor M for conducting state5b, radiofrequency signal passes through metal-oxide-semiconductor M5bC points are reached after drain electrode and source electrode, and small part radio frequency is believed
After number by the T-shaped trapper unit of bridge, by VINPort is exported.
Bonding wire stray inductance L2b, bonding wire stray inductance L4b, inductance L3b, resistance R7b, metal-oxide-semiconductor M1bWith metal-oxide-semiconductor M2b
The parasitic capacitance C formed during OFF state between source-drain electrodeM1bAnd CM2b, metal-oxide-semiconductor M4bWhat is formed in conducting state between source-drain electrode posts
Raw resistance constitutes the T-shaped trapper structure of bridge, due to bonding wire stray inductance L2b, bonding wire stray inductance L4bWith inductance L3bSeries connection,
It can be equivalent to inductance L2b+3b+4b, resistance R7bWith metal-oxide-semiconductor M4bThe dead resistance formed in conducting state between source electrode and drain electrode
Series connection, it can be equivalent to resistance R7b+M4b, as shown in Figure 3.
Trapper can suppress the signal of certain frequency range, be combined when with RF switch, in off state, equal to raising
Isolation of the RF switch in this frequency.By adjusting resistance R7bWith inductance L3bValue, can targetedly improve radio frequency
The isolation of switch at different frequencies.
Resistance R1bWith metal-oxide-semiconductor M1bGrid connection, its resistance is generally 3~8K Ω；Resistance R2bWith metal-oxide-semiconductor M2bGrid
Connection, its resistance is generally 3~8K Ω；Resistance R3bWith metal-oxide-semiconductor M3bGrid connection, its resistance is generally 3~8K Ω；Resistance
R4bWith metal-oxide-semiconductor M4bGrid connection, its resistance is generally 3~8K Ω；Resistance R5bWith metal-oxide-semiconductor M5bGrid be connected, its resistance one
As be 3~8K Ω；Resistance R1b~resistance R5bCarried between grid and the first control end B or the second control end A for MOS transistor
For enough isolation.
When RF switch is conducting state, radiofrequency signal is from VOUTPort output signal amplitude with from VINHold into output letter
The ratio of number amplitude is the insertion loss of RF switch, and Fig. 4 contrasts for the present invention with conventional radio frequency switch insertion loss, "○"
Relation curve between the insertion loss and frequency that are switched for conventional radio frequency, " △ " inserts for the high-isolation RF switch of the present invention
Enter the relation curve between loss and frequency.
When RF switch is off state, by VINPort output signal amplitude is with passing through VOUTPort input/output signal
The isolation of the ratio of amplitude, as RF switch, Fig. 5 contrasts for the present invention with conventional radio frequency switch isolation degree, and "○" is to pass
Unite RF switch isolation and frequency between relation curve, " △ " for the present invention high-isolation RF switch isolation with
Relation curve between frequency.
Metal-oxide-semiconductor, resistance, electric capacity, the basic parameter of inductance in circuit of the present invention are：
Gate oxide thickness 7.2nm~8.4nm of metal-oxide-semiconductor；
Metal-oxide-semiconductor：︱ Vgs︱：0~5V, ︱ Vds︱：0~5V, ︱ Vbs︱：0~5V.
M1b、M2b、M3b、M4b、M5bGrid width：0.35μm；
M1b、M2b、M3b、M4b、M5bGrid it is long：200μm；
Resistance R1b、R2b、R3b、R4b、R5bFor polysilicon high value resistance, resistance R6b、R7bFor polysilicon resistance.
R1b、R2b、R3b、R4b、R5bWidth be 10 μm；
R1b、R2b、R3b、R4b、R5bLength be 50 μm；
R6b、R7bWidth be 50 μm；
R6bLength be 24 μm；
R7bLength be 29 μm；
Bonding wire stray inductance L1b, bonding wire stray inductance L2bWith bonding wire stray inductance L4bEstimated value is 0.3nH；
Inductance L3bFor chip coiling high-frequency inductor, inductance is：10nH.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, it is clear that those skilled in the art
Member can carry out various changes and modification to the present invention without departing from the spirit and scope of the present invention.So, if the present invention
These modifications and variations belong within the scope of the claims in the present invention and its equivalent technologies, then the present invention is also intended to include these
Including change and modification.
Claims (1)
1. a kind of high-isolation RF switch with trapper structure, including single-pole single-throw(SPST RF switching unit, the hilted broadsword
Singly throwing RF switching unit includes metal-oxide-semiconductor M1b, metal-oxide-semiconductor M2b, metal-oxide-semiconductor M3b, metal-oxide-semiconductor M4b, metal-oxide-semiconductor M5bRespectively with metal-oxide-semiconductor M4b
Source electrode, metal-oxide-semiconductor M5bSource electrode connection bonding wire stray inductance L1b, it is characterised in that：The RF switch also includes bridge T
Type trap wave unit, the T-shaped trap wave unit of bridge includes bonding wire stray inductance L2b, inductance L3b, bonding wire stray inductance L4b, electricity
Hinder R7b, metal-oxide-semiconductor M1bWith metal-oxide-semiconductor M2bThe parasitic capacitance and metal-oxide-semiconductor M formed in OFF state between source electrode and drain electrode4bIn conducting state
When source electrode and drain electrode between the dead resistance that is formed；The bonding wire stray inductance L2b, inductance L3b, bonding wire stray inductance L4b
Metal-oxide-semiconductor M is parallel to after being sequentially connected1bDrain electrode and metal-oxide-semiconductor M2bSource electrode between, bonding wire stray inductance L2bWith metal-oxide-semiconductor M1b's
Drain electrode connection, bonding wire stray inductance L4bWith metal-oxide-semiconductor M2bSource electrode connection, the resistance R7bIt is series at metal-oxide-semiconductor M4bSource electrode with
Bonding wire stray inductance L1bOne end between, bonding wire stray inductance L1bThe other end ground connection；The single-pole single-throw(SPST RF switch
Unit also includes resistance R1b, resistance R2b, resistance R3b, resistance R4b, resistance R5bAnd resistance R6b, the metal-oxide-semiconductor M1bDrain electrode and letter
Number input VINConnection, metal-oxide-semiconductor M1bSource electrode and metal-oxide-semiconductor M2bDrain electrode connection, metal-oxide-semiconductor M2bSource electrode and metal-oxide-semiconductor M3bLeakage
Pole is connected, metal-oxide-semiconductor M3bSource electrode be connected with signal output part, the metal-oxide-semiconductor M1bGrid through resistance R1bConnect with the first control end
Connect, metal-oxide-semiconductor M2bGrid through resistance R2bIt is connected with the first control end, metal-oxide-semiconductor M3bGrid through resistance R3bConnect with the first control end
Connect；The metal-oxide-semiconductor M4bDrain electrode respectively with metal-oxide-semiconductor M1bSource electrode, metal-oxide-semiconductor M2bDrain electrode connection, metal-oxide-semiconductor M4bGrid through electricity
Hinder R4bIt is connected with the second control end；The metal-oxide-semiconductor M5bDrain electrode respectively with metal-oxide-semiconductor M2bSource electrode, metal-oxide-semiconductor M3bDrain electrode connection,
Metal-oxide-semiconductor M5bGrid through resistance R5bIt is connected with the second control end, metal-oxide-semiconductor M5bSource electrode through bonding wire stray inductance L1bGround connection；Institute
State resistance R6bIt is parallel to metal-oxide-semiconductor M3bSource electrode and drain electrode between.
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| CN109327194A (en) * | 2018-09-06 | 2019-02-12 | 南京国博电子有限公司 | A kind of one chip low-noise amplifier of the broadband High Linear with bypass functionality |
| CN109194291A (en) * | 2018-09-06 | 2019-01-11 | 南京国博电子有限公司 | A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality |
| CN113824466B (en) * | 2021-08-30 | 2022-11-18 | 电子科技大学 | Ultra-wideband radio frequency transceiving switch adopting clamping resistor |
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|---|---|---|---|---|
| CN1122534A (en) * | 1994-08-29 | 1996-05-15 | 株式会社日立制作所 | Low distortion switch |
| US5731607A (en) * | 1995-04-24 | 1998-03-24 | Sony Corporation | Semiconductor integrated circuit device |
| EP2001130A1 (en) * | 2007-06-05 | 2008-12-10 | Saab Ab | Monolithic microwave integrated circuit power converter and gate driver circuit |
| CN104733809A (en) * | 2013-12-24 | 2015-06-24 | 株式会社村田制作所 | Switching Circuit And Semiconductor Module |
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2015
- 2015-07-21 CN CN201510430671.6A patent/CN104993812B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1122534A (en) * | 1994-08-29 | 1996-05-15 | 株式会社日立制作所 | Low distortion switch |
| US5731607A (en) * | 1995-04-24 | 1998-03-24 | Sony Corporation | Semiconductor integrated circuit device |
| EP2001130A1 (en) * | 2007-06-05 | 2008-12-10 | Saab Ab | Monolithic microwave integrated circuit power converter and gate driver circuit |
| CN104733809A (en) * | 2013-12-24 | 2015-06-24 | 株式会社村田制作所 | Switching Circuit And Semiconductor Module |
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