CN109427991A - Packaging film, electronic device and preparation method thereof - Google Patents
Packaging film, electronic device and preparation method thereof Download PDFInfo
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- CN109427991A CN109427991A CN201710747620.5A CN201710747620A CN109427991A CN 109427991 A CN109427991 A CN 109427991A CN 201710747620 A CN201710747620 A CN 201710747620A CN 109427991 A CN109427991 A CN 109427991A
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- 229920006280 packaging film Polymers 0.000 title claims abstract description 63
- 239000012785 packaging film Substances 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 87
- 229910052574 oxide ceramic Inorganic materials 0.000 claims abstract description 87
- 239000000919 ceramic Substances 0.000 claims abstract description 77
- 150000004767 nitrides Chemical class 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 24
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 21
- 239000012528 membrane Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 22
- 239000001301 oxygen Substances 0.000 abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 21
- 230000004888 barrier function Effects 0.000 abstract description 17
- 239000000126 substance Substances 0.000 abstract description 10
- 230000006641 stabilisation Effects 0.000 abstract description 6
- 238000011105 stabilization Methods 0.000 abstract description 6
- 239000002131 composite material Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 199
- 239000010408 film Substances 0.000 description 141
- 238000005538 encapsulation Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 10
- 230000005611 electricity Effects 0.000 description 9
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 230000027756 respiratory electron transport chain Effects 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- 239000002346 layers by function Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 238000007747 plating Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000002096 quantum dot Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229920000144 PEDOT:PSS Polymers 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 230000002195 synergetic effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910000024 caesium carbonate Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of packaging film and electronic devices and preparation method thereof.Packaging film of the present invention includes nitride ceramics film layer, the first oxide ceramics film layer formed in the nitride ceramics film layer and the second oxide ceramics film layer formed in the first oxide ceramics film layer.Electronic device of the present invention includes the packaging film of the present invention for encapsulating electronic component.Packaging film of the present invention constitutes composite package film layer structure by nitride ceramics film layer and two layers of oxide ceramics film layer, and barrier water oxygen acts on excellent, stable structure, ensure that the stabilization of electronic device chemical property, extend working life.
Description
Technical field
The invention belongs to encapsulate technical field of membrane, and in particular to a kind of packaging film, the electronics comprising the packaging film
Device and preparation method.
Background technique
Packaging film can be used for protecting the electronic component (such as diode) to external factor such as moisture or oxygen sensitive, too
Positive energy battery or secondary cell.
The service life of electronic component is very important a parameter.In the service life for improving electronic component, reach commercial water
Flat, encapsulation is a vital link.For electronic component, encapsulation is not only to prevent the physical protections such as scuffing,
More importantly prevent steam in external environment, the infiltration of oxygen.Steam in these environment penetrates into device inside, can accelerate
The aging of device.Therefore the encapsulating structure of electronic component must have the function of good permeation barrier.
Currently, the encapsulation technology of commercial electronic component is just from traditional cover-plate type encapsulation to novel thin film integrative packaging
Development.It is encapsulated compared to traditional cover board, thin-film package can be substantially reduced the thickness and quality of device, about save 50%
Potential packaging cost, while thin-film package can be suitably used for flexible device.Thin film encapsulation technology will be the inexorable trend developed.Such as exist
It discloses in a patent of Ou Silang OLED Co., Ltd and is encapsulated using film layer, specifically encapsulated using organic or inorganic
Layer, and a metal layer is also added in film layer encapsulated layer outer surface.Therefore, according to the effect of its encapsulated layer, primarily serving will be hot
Metal layer is transferred to radiate.And it is which kind of material and the technique item of formation with no specific disclosure of organic or inorganic
Part.
Although ceramic membrane has good water, oxygen barrier performance, good stepped covering and splendid the thickness uniformity,
It can attempt for electronic package barrier material, still, defect (pin hole, crackle during generating ceramic membrane
Deng) can be inevitably generated, the presence of defect greatly reduces its obstructing capacity.Ceramic membrane can generate biggish answer simultaneously
Power seriously affects package quality.In addition, when multilayer multi-layer ceramics membrane body structure is arranged, the difference of thermal expansion coefficient, so that
Multi-layer ceramics film is easy to produce the problem of compatibility in superposition, and then influences packaging film quality.
Therefore, the current industry of packaging effect for how improving electronic component such as electronic component has been working hard the skill of solution
Art problem.
Summary of the invention
It is an object of the invention to overcome the deficiency of the prior art, provide a kind of packaging film, with solve it is existing such as
Packaging film unstable quality, and the technical problem of water oxygen obstructing capacity difference are used as using ceramics.
Another object of the present invention is to provide a kind of electronic device and preparation method, with solve existing electronic device due to
Packing component water oxygen barrier property is poor, and electronic performance stability caused by the factors such as structural instability is poor, and the service life is undesirable
Technical problem.
In order to realize that the goal of the invention, one aspect of the present invention provide a kind of packaging film.The packaging film, institute
Stating the first oxide ceramics film surface includes:
Nitride ceramics film layer；
The the first oxide ceramics film layer formed in the nitride ceramics film layer；With
The the second oxide ceramics film layer formed in the first oxide ceramics film layer.
Another aspect of the present invention, provides a kind of electronic device, and the electronic device includes:
Substrate；
Electronic component formed on a substrate；With
Packaging film of the present invention, the packaging film encapsulate the electronic component；
Wherein, the nitride ceramics film layer is arranged in the substrate and/or electronical elements surface；
The first membrane of oxide ceramics layer stackup is incorporated in the nitride ceramics film surface；
The second membrane of oxide ceramics layer stackup is incorporated in the first oxide ceramics film surface.
Another aspect of the invention provides a kind of preparation method of electronic device.The preparation method packet of the electronic device
Include following steps:
Substrate is provided, the substrate includes substrate and the electronic component that is set on the substrate；
Packaging film of the present invention is formed on the substrate, and the electronic component is packaged；
Wherein, the nitride ceramics film layer is arranged in the substrate surface；
The first membrane of oxide ceramics layer stackup is incorporated in the nitride ceramics film surface；
The second membrane of oxide ceramics layer stackup is incorporated in the first oxide ceramics film surface.
Compared with prior art, packaging film of the present invention passes through nitride ceramics film layer and two layers of oxide ceramics film layer structure
At composite package film layer structure.Wherein, nitride ceramics layer plays the role of good barrier water oxygen, the second oxide ceramics film layer
With excellent mechanical strength and hardness, higher, thermal shock resistance and chemical resistance of concrete performance are good.First oxide ceramics
Film layer stacking is incorporated between nitride ceramics film layer and the second oxide ceramics film layer, can be played the role of transition zone, be subtracted
The difference of small nitride ceramics film layer and the second oxide ceramics film layer thermal expansion coefficient, the film for reducing entire packaging film are answered
Power；Meanwhile so that reducing film layer without apparent interface between nitride ceramics film layer and the second oxide ceramics film layer
Defect state.Therefore, packaging film of the present invention passes through the composite package film layer structure of three layers of composition, is made by the collaboration between each layer
With barrier water oxygen effect is excellent, and stable structure.To effectively increase the stability of packed electronic component work,
Extend the service life of electronic component.
Electronic device of the present invention encapsulates the electronic component using the present invention encapsulation film layer.Electronics dress of the present invention in this way
Damage of the water oxygen to packed electronic component in air can effectively be completely cut off by setting contained encapsulation film layer, guarantee the electricity of electronic component
Stable chemical performance.Therefore, electronic device functions performance of the present invention is stablized, and long working life.
The preparation method of electronic device of the present invention directly needs the position encapsulated to form the present invention envelope in electronic component
Film is filled, therefore, the electronic device package effect of preparation is good, and it can effectively obstruct water oxygen and packed electronic component is damaged,
So that the electronic device functions performance of preparation is stablized, and long working life.In addition, preparation method process conditions of the present invention are easily-controllable,
It ensure that the performance of the packaging film of preparation is stablized, reduce preparation cost.
Detailed description of the invention
Fig. 1 is packaging film structural schematic diagram of the embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of electronic device of the embodiment of the present invention；
Fig. 3 is electronic device another kind structural schematic diagram of the embodiment of the present invention.
Specific embodiment
In order to which technical problems, technical solutions and advantageous effects to be solved by the present invention are more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain
The present invention is not intended to limit the present invention.
In the embodiment of the present invention, hereafter noun is made as described below.
Term used herein " electronic device " refers to the electronic component having the following structure, the electronic component it is a pair of that
It as an example include photovoltaic device, rectification including the use of the material layer for generating charge-exchange with electronics between this electrode faced
Device, transmitter, electricity luminescent device, but the application is without being limited thereto.The electricity luminescent device includes OLED, QLED.
Term used herein " encapsulation ", which refers to, needs the position encapsulated to carry out at covering using encapsulation film layer in electronic component
Reason, according to the function of realization, different electronic component structures has different requirements to the position of encapsulation, specifically, the electronics
Element needs the top surface and side that the position encapsulated can be all with electronic component, naturally it is also possible to be only the top surface of electronic component
Or side.The position encapsulated as needed is different, and packaging film can be formed in electronical elements surface or electronic component and substrate
Surface.
On the one hand, the embodiment of the present invention provides a kind of barrier water oxygen excellent effect, the packaging film of stable structure.The envelope
Membrane structure is filled as shown in Figure 1, the packaging film 20 includes nitride ceramics film layer 21, the first oxide pottery that stacking combines
Porcelain film layer 22 and the second oxide ceramics film layer 23.Specifically, the first oxide ceramics film layer 22 is formed at nitride ceramics
On 21 surface of film layer, the second oxide ceramics film layer 23 is formed on 22 surface of the first oxide ceramics film layer.In this way, described
Packaging film 20 passes through the composite package film layer structure of three layers of composition, by the synergistic effect between each layer, obstructs water oxygen effect
It is excellent, and stable structure.To ensure that packed electronic component 10 (Fig. 2,3 shown in) chemical property stabilization, prolong
10 working life of electronic component is grown.
Wherein, the nitride ceramics film layer 21 plays the role of good barrier water oxygen.In one embodiment, nitride is controlled
Ceramic layer 21 with a thickness of 50nm-1 μm；The material of the nitride ceramics layer 21 includes AlN, Si3N4、BN、TiN、MoN2With
WN2At least one of.By the selection to nitride ceramics layer 21 thickness and material, optimize the barrier of nitride ceramics layer 21
Water oxygen function and effect.
The first oxide ceramics film layer 22 can play the role of transition zone, reduce nitride ceramics film layer 21 and the
The difference of 23 thermal expansion coefficient of dioxide ceramic film reduces the membrane stress of entire packaging film 20；Meanwhile so that nitridation
Without apparent interface between object ceramic film 21 and the second oxide ceramics film layer 23, reduce the defect state of film layer.One is real
Apply in example, control the first oxide ceramics film layer 22 with a thickness of 1nm-10nm.The material of the first oxide ceramics film layer 22
Material can be Al2O3、SiO2、TiO2、MoO3And WO3At least one of.By to 22 thickness of the first oxide ceramics film layer and
The selection of material, the transition zone effect of the first oxide ceramics film layer 22 of optimization reduce the membrane stress of packaging film 20 and lack
State is fallen into, the packaging effect of the barrier water oxygen of packaging film 20 is improved.In a kind of specific embodiment, it can be directly to nitrogen
The first oxide ceramics film layer 22 is prepared by anneal oxidation processing in 21 surface of compound ceramic film, using the method
The the first oxide ceramics film layer 22 being prepared can be good at playing the role of transition zone, reduce nitride ceramics film
The difference of layer 21 and 23 thermal expansion coefficient of the second oxide ceramics film layer, reduces the membrane stress of entire packaging film 20.
The second oxide ceramics film layer 23 is used to improve the mechanical strength and hardness of packaging film 20, heat shock resistance
Performance and chemical resistance of concrete performance are good.In one embodiment, control the second oxide ceramics film layer 23 with a thickness of 50nm-1 μm.
In another embodiment, the material of the second oxide ceramics film layer 23 includes Al2O3、SiO2、TiO2、MoO3And WO3In
It is at least one.By the selection to the second oxide ceramics film layer 23 thickness and material, optimize the second oxide ceramics film layer 23
The function and effect.
Therefore, packaging film of the embodiment of the present invention has excellent by the synergistic effect between the contained trilamellar membrane layer
Different barrier water oxygen characteristic, and stable structure.
On the other hand, the embodiment of the invention provides a kind of electronic devices.The electronic device includes substrate 01, described
The electronic component 10 formed on substrate 01 and the packaging film 20 for encapsulating the electronic component 10, wherein the nitride
Ceramic film 21 is arranged on 10 surface of the substrate 01 and/or electronic component；The stacking of first oxide ceramics film layer 22 knot
It closes on 21 surface of nitride ceramics film layer；The stacking of second oxide ceramics film layer 23 is incorporated in first oxide
21 surface of ceramic film.As Figure 2-3.
Wherein, substrate 01 can be the common substrate of electronic component, specifically can carry out spirit according to the type of electronic component
It is living to select.
Electronic component 10 contained by the electronic device can be any electronic component for needing isolating oxygen and water, including light
Lie prostrate device, rectifier, transmitter, electricity luminescent device etc..The electricity luminescent device can be light emitting diode such as: OLED or
QLED。
In one embodiment, when the electronic component 10 is OLED and QLED, electronic component 10 may include stacking gradually
In conjunction with hearth electrode 11, luminescence unit layer 12 and top electrode 13, as Figure 2-3.
In one embodiment, the hearth electrode 11 can be with hearth electrodes such as existing QLED and OLED.In addition, the hearth electrode 11 can
To be that stacking is incorporated on substrate 01, such as Fig. 2-3.
In one embodiment, the luminescence unit layer 12 includes hole functional layer 121, luminescent layer 122 and electronic work ergosphere 123
Etc. structures, as shown in Figure 3.
Wherein, the hole functional layer 121 may include hole injection layer 1211, one layer in hole transmission layer 1212 or
It is stacked on one another two layers of combination.It is stacking knot when hole functional layer 121 is hole injection layer 1211 or hole transmission layer 1212
It closes between hearth electrode 11 and luminescent layer 122；When hole functional layer 121 is that hole injection layer 1211 and hole transmission layer 1212 are multiple
When closing layer, stacked gradually by hearth electrode 11 to 122 direction of luminescent layer, hole injection layer 1211 and hole transmission layer 1212, namely
It is that hole injection layer 1211 is combined with the stacking of hearth electrode 11, hole transmission layer 1212 is combined with the stacking of luminescent layer 122.By adding
Hole functional layer 121 can effectively improve the injection in the hole at 11 end of hearth electrode and be transmitted in luminescent layer 22, improve itself and electricity
Subcomplex is at exciton amount, to improve the luminous efficiency of luminescent layer 22.In a particular embodiment, the thickness of hole injection layer 1211
Degree can be 30-40nm, and the material of hole injection layer 1211 can be with but not just for PEDOT:PSS；The hole transmission layer
1212 thickness can be 30-50nm, the material of hole transmission layer 1212 can with but not just in poly-TPD, TFB extremely
A kind of few organic matter, or be NiO, MoO3At least one of inorganic matter.
The thickness of the luminescent layer 122 can be 30-60nm, and the material of luminescent layer 122 is to be not limited to core-shell quanta dots, base
In the quantum dot of gradual change shell, phosphorescence or fluorescent luminescent material.When the material of luminescent layer 122 is quanta point material luminescent material
When, the power generating device is light emitting diode with quantum dots, and in a particular embodiment, quanta point material can with but not just for
The core-shell quanta dots such as CdSe/ZnS, CdS/ZnSe, CdZnS/ZnSe or quanta point material based on gradual change shell；Work as luminescent layer
When 122 material luminous organic material such as fluorescent luminescent material, the power generating device is Organic Light Emitting Diode.
The electronic work ergosphere 123 may include electron transfer layer 1231, one layer in electron injecting layer 1232 or each other
Two layers of stacking combination.It is that stacking is incorporated in when electronic work ergosphere 123 is electron transfer layer 1231 or electron injecting layer 1232
Between luminescent layer 122 and top electrode 13；When electronic work ergosphere 123 is the compound of electron transfer layer 1231 and electron injecting layer 1232
When layer, is stacked gradually, be that is to say by luminescent layer 122 to 13 direction of top electrode, electron transfer layer 1231 and electron injecting layer 1232
Electron transfer layer 1231 is combined with the stacking of luminescent layer 122, and electron injecting layer 1232 is combined with the stacking of top electrode 13.By adding electricity
Subfunction layer 123 can effectively improve the injection of the electronics at 13 end of top electrode and be transmitted in luminescent layer 122, improve itself and sky
Cave is compounded to form exciton amount, to improve the luminous efficiency of luminescent layer 122.In a particular embodiment, electron transfer layer 1231
Thickness can be 50-150nm, and the material of electron transfer layer 1231 can be with but not just for ZnO, Cs2CO3、Alq3In at least one
Kind；The thickness of the electron injecting layer and the material of electron injecting layer can be material conventional in the art.In addition, due to normal
The level-density parameter of material such as ZnO and electrode selected by electron transfer layer contained by the QLED and OLED of rule are relatively good, usual situation
Electron injecting layer is not needed.
Therefore, by each functional layer structure contained by luminescence unit layer 12 and each functional layer thickness and material category
Control and optimization, can effectively improve the luminous efficiency of luminescence unit layer 12.
The top electrode 13 can be the top electrode of conventional light emitting diode, such as in one embodiment, for example metallic silver
Layer cathode or aluminum metal cathode.The thickness of top electrode 13 can be conventional thickness, for example but not just for 50-150nm.
Packaging film 20 contained by the electronic device is packaging film as shown in Figure 1 20 described above.It is specific its
Nitride ceramics film layer 21, the first oxide ceramics film layer 22 and the second oxide ceramics film layer 23 combined including stacking.Institute
State the design feature such as film layer of nitride ceramics film layer 21, the first oxide ceramics film layer 22 and the second oxide ceramics film layer 23
Thickness, material etc. as described above, in order to save length, herein no longer make pottery to nitride ceramics film layer 21, the first oxide
Porcelain film layer 22 and 23 characteristic of the second oxide ceramics film layer are repeated.
Term used herein " encapsulation ", which refers to, needs the position encapsulated to carry out at covering using encapsulation film layer in electronic component
Reason, according to the characteristic or requirements of one's work of realization, different electronic component structures has different requirements to the position of encapsulation, specifically
Ground, the electronic component need the top surface and side that the position encapsulated can be all with electronic component, naturally it is also possible to be only electricity
The top surface or side of subcomponent.By taking OLED the or QLED light emitting diode in the embodiment of the present invention as an example:
On substrate, the bottom surface of light emitting diode is in conjunction with substrate, the thinner package film layer for the light emitting diode setting
It folds in conjunction with the top surface light emitting diode in the light emitting diode to being packaged, in one embodiment, such as Fig. 2, Fig. 3 institute
Show, packaging film 20 can be laminated on the top surface for being incorporated in top electrode 13 contained by the light emitting diode 10.In this way, avoiding sealing
Fill influence of the film 20 to the light emission rate of light emitting diode 10.
Specifically, when encapsulating electronic component 10 using packaging film 20 of the present invention, the nitride ceramics film layer
21 are used as innermost layer to be combined setting with electronic component 10, and the first oxide ceramics film layer 22 is arranged as middle layer described
Surface (the phase in the face that the i.e. described packaging film nitride ceramics film layer 21 is combined with electronic component 10 of nitride ceramics film layer 21
Pair one side), the second oxide ceramics film layer 23 is formed in the first oxide ceramics film layer 22 as outermost layer
Surface is thusly-formed the encapsulation of three-decker.
Based on above-mentioned it is found that the electronic device is steady by excellent barrier water oxygen possessed by packaging film 20 and structure
It is qualitative, to ensure that the stabilization of the electronic device such as light emitting diode chemical property, extend the electronic device
Working life.
Another aspect, on the basis of above-mentioned electronic device, the embodiment of the invention provides one kind of above-mentioned electronic device
Preparation method.In conjunction with Fig. 1-3, the preparation method of the electronic device includes the following steps:
Substrate is provided, the substrate includes substrate 01 and the electronic component 10 that is set on the substrate 01；
The packaging film 20 is formed on the substrate, and the electronic component 10 is packaged.
Term used herein " encapsulation ", which refers to, needs the position encapsulated to carry out at covering using encapsulation film layer in electronic component
Reason, according to the characteristic or requirements of one's work of realization, different electronic component structures has different requirements to the position of encapsulation, specifically
Ground, the electronic component need the top surface and side that the position encapsulated can be all with electronic component, naturally it is also possible to be only electricity
The top surface or side of subcomponent.
Specifically, the method for forming the packaging film 20 on the substrate, includes the following steps:
The nitride ceramics film layer 21 is formed on the substrate；
Anneal oxidation processing is carried out to the surface of the nitride ceramics film layer 21, in the nitride ceramics film layer 21
Surface forms the first oxide ceramics film layer 22；
The second oxide ceramics film layer 23 is formed on 22 surface of the first oxide ceramics film layer, in this way, final real
Encapsulation of the existing packaging film 20 to the three-decker of the electronic component 10.
In further embodiment, the method for forming the nitride ceramics film layer 21 is adopted using ceramic nitrides as target
With the method for magnetron sputtering, form a film at the position that the electronic component 10 needs to encapsulate, the process conditions of the magnetron sputtering are as follows:
Radio-frequency power is between 50-200W, plated film rate 0.5-1nm/s, sputtering pressure 0.5-2Pa.By the control to membrance casting condition,
Realize the control to nitride ceramics film layer 21 thickness and quality of forming film of formation.
Specifically, the material of the ceramic nitrides target includes: AlN, Si3N4、BN、TiN、MoN2And WN2In at least
It is a kind of.
In further embodiment, the method for forming the second oxide ceramics film layer 23 is using ceramic oxide as target
Material is formed a film in the first oxide ceramics film layer 21 using the method for magnetron sputtering.The process conditions of the magnetron sputtering
Are as follows: radio-frequency power is between 50-200W, plated film rate 0.5-1nm/s, sputtering pressure 0.5-2Pa.Pass through the control to membrance casting condition
System realizes the control of the thickness and quality of forming film to the second oxide ceramics film layer 23 of formation.
Specifically it is referred to the condition of following second oxide ceramics film layer, 22 magnetron sputtering film forming.Preferably, institute
The first oxide ceramics film layer 22 is stated to form a film using the methods of chemical oxidation treatment, method particularly includes:
21 surface of nitride ceramics film layer is subjected to anneal oxidation processing, so that the table of the nitride ceramics film layer
Layer nitride oxide generates oxide membranous layer.
Specifically, the material for forming the ceramic oxide target of the second oxide ceramics film layer 23 includes: Al2O3、SiO2、
TiO2、MoO3And WO3At least one of.Therefore, the material of the second oxide ceramics film layer 23 can be with the first oxide ceramics
22 material of film layer is identical or different, and preferably identical oxide, the film layer that can be effectively reduced packaging film 20 in this way is answered
The stability and barrier water oxygen effect of power and structure.By the control to membrance casting condition, the nitride ceramics to formation is realized
The control of 21 thickness of film layer.
In addition, when the electronic component 10 in the preparation method of above-mentioned electronic device is light-emitting diodes as shown in Figures 2 and 3
When pipe 10, then the preparation method of the light emitting diode 10 can be according to such as the light emitting diode 10 above as described in Fig. 2, Fig. 3
Contained layer structure conventionally prepares to be formed.
In this way, the electronic device preparation method needs the position encapsulated directly to form packaging film 20 in electronic component 10
Structure, each film layer play synergistic function, so that defect state is low in composite package film 20, stress in thin film is small, mechanical strength
With hardness is higher, thermal shock resistance and chemical resistance of concrete performance are good, barrier water oxygen effect is excellent, and the spies such as stable structure
Property, to ensure that the job stability of electronic device.In addition, the preparation method process conditions are easily-controllable, preparation ensure that
20 performance of packaging film is stablized, and preparation cost is reduced.
As the electronic device as above-mentioned packaging film 20 contained by it has excellent barrier water oxygen characteristic, Er Qiejie
Structure is stablized, and the stabilization of the electronic device chemical property, long working life are assigned.Therefore, electronic device described above can
Widely it is applied.
When the electronic component 10 contained by the electronic device above is light emitting diode, then electronic device described above is luminous
Diode apparatus.Since the encapsulation film layer of the light-emitting diode assembly is 20 structure of packaging film described above, it is described
Light-emitting diode assembly, which shines, waits the stabilization of chemical properties, long working life.The light-emitting diode assembly can be used as a result,
In display screen or solid-state lighting lamp field, is shown or the stability of luminescent properties to improve corresponding device, use the longevity
Life length.
Now in conjunction with specific example, the present invention will be described in further detail.Wherein, the hereafter "/" table in each embodiment
What is shown is the meaning that stacking combines.
Embodiment 1
The present embodiment provides a kind of electronic devices.It includes substrate, be incorporated into QLED electronic component on the substrate and
For encapsulating the packaging film of the QLED electronic component.The structure of the electronic device are as follows: ITO substrate/PEDOT:PSS
(50nm)/poly-TPD (30nm)/quantum dot light emitting layer (20nm)/ZnO (30nm)/silver (70nm)/AlN (100nm)/Al2O3
(3nm)/Al2O3(100nm)。
The present embodiment electronic device is prepared as follows:
S11: each layer is sequentially formed according to the present embodiment QLED structure on ITO substrate, to form QLED；
S12: the magnetron sputtering AlN ceramic film layer in the silver electrode of QLED, the condition of magnetron sputtering plating process are as follows:
Radio-frequency power is between 60W, plated film rate 15nm/s, sputtering pressure 0.6Pa；
AlN ceramic film layer in step S12: being carried out anneal oxidation in air at 800 DEG C and handles 1h by S13, so that
AlN ceramic film layer surface layer occurs oxidation and generates Al2O3Oxide ceramics film layer；
S14: in Al after cooling2O3Oxide ceramics film surface one layer of Al of magnetron sputtering again2O3Membrane of oxide ceramics
Layer forms packaging film, the condition of magnetron sputtering plating process are as follows: and radio-frequency power is between 60W, plated film rate 20nm/s,
Sputtering pressure 0.4Pa.
Embodiment 2
The present embodiment provides a kind of electronic devices.It includes substrate, be incorporated into QLED electronic component on the substrate and
For encapsulating the packaging film of the QLED electronic component.The structure of the electronic device are as follows: ITO substrate/PEDOT:PSS
(50nm)/poly-TPD (30nm)/quantum dot light emitting layer (20nm)/ZnO (30nm)/silver (70nm)/Si3N4(500nm)/SiO2
(10nm)/SiO2(500nm)。
The present embodiment electronic device is prepared as follows:
S21: each layer is sequentially formed according to the present embodiment QLED structure on ITO substrate, to form QLED；
S22: the magnetron sputtering Si in the silver electrode of QLED3N4Ceramic film, the condition of magnetron sputtering plating process
Are as follows: radio-frequency power is between 80W, plated film rate 20nm/s, sputtering pressure 0.6Pa；
S23: by the Si in step S223N4Ceramic film carries out anneal oxidation at 900 DEG C in air and handles 2h, so that
Si3N4Ceramic film surface layer occurs oxidation and generates SiO2Oxide ceramics film layer；
S24: in SiO after cooling2Oxide ceramics film surface one layer of SiO of magnetron sputtering again2Oxide ceramics film layer,
Form packaging film, the condition of magnetron sputtering plating process are as follows: radio-frequency power is between 80W, plated film rate 18nm/s, sputtering
Air pressure 0.4Pa.
Embodiment 3
Embodiment 2
The present embodiment provides a kind of electronic devices.It includes substrate, be incorporated into QLED electronic component on the substrate and
For encapsulating the packaging film of the QLED electronic component.The structure of the electronic device are as follows: ITO substrate/PEDOT:PSS
(50nm)/poly-TPD (30nm)/quantum dot light emitting layer (20nm)/ZnO (30nm)/silver (70nm)/TiN (800nm)/TiO2
(10nm)/TiO2(800nm)。
The present embodiment electronic device is prepared as follows:
S31: each layer is sequentially formed according to the present embodiment QLED structure on ITO substrate, to form QLED；
S32: the magnetron sputtering TiN ceramic film in the silver electrode of QLED, the condition of magnetron sputtering plating process are as follows:
Radio-frequency power is between 80W, plated film rate 20nm/s, sputtering pressure 0.6Pa；
TiN ceramic film in step S32: being carried out anneal oxidation in air at 1000 DEG C and handles 2h by S33, so that
TiN ceramic film surface layer occurs oxidation and generates TiO2Oxide ceramics film layer；
S34: in TiO after cooling2Oxide ceramics film surface one layer of TiO of magnetron sputtering again2Oxide ceramics film layer,
Form packaging film, the condition of magnetron sputtering plating process are as follows: radio-frequency power is between 80W, plated film rate 20nm/s, sputtering
Air pressure 0.4Pa.
Test result learns that electronic component contained by the present embodiment electronic device is packaged using the packaging film,
Assign the packaging film excellent water oxygen barrier action and mechanical performance, so that the electrochemistry of the present embodiment electronic device
The stabilization of performance improves device operational lifetime.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of packaging film, it is characterised in that: including
Nitride ceramics film layer；
The the first oxide ceramics film layer formed in the nitride ceramics film layer；With
The the second oxide ceramics film layer formed in the first oxide ceramics film layer.
2. packaging film according to claim 1, it is characterised in that: the nitride ceramics film layer with a thickness of 50nm-1
μm；And/or
The first oxide ceramics film layer with a thickness of 1-10nm；And/or
The second oxide ceramics film layer with a thickness of 50nm-1 μm.
3. packaging film according to claim 1, it is characterised in that: the material of the nitride ceramics film layer include AlN,
Si3N4、BN、TiN、MoN2And WN2At least one of；And/or
The material of the first oxide ceramics film layer and/the second oxide ceramics film layer includes Al2O3、SiO2、TiO2、
MoO3And WO3At least one of.
4. packaging film according to claim 1 to 3, it is characterised in that: the first oxide ceramics film layer be by
The nitride ceramics film surface carries out anneal oxidation processing and is formed.
5. a kind of electronic device, comprising:
Substrate；
Electronic component formed on a substrate；With
Packaging film described in claim 1-4, the packaging film encapsulate the electronic component；
Wherein, the nitride ceramics film layer is arranged in the electronical elements surface or substrate and electronical elements surface；
The first membrane of oxide ceramics layer stackup is incorporated in the nitride ceramics film surface；
The second membrane of oxide ceramics layer stackup is incorporated in the first oxide ceramics film surface.
6. a kind of preparation method of electronic device, which comprises the steps of:
Substrate is provided, the substrate includes substrate and the electronic component that is set on the substrate；
Packaging film described in claims 1 to 3 any one is formed on the substrate, and the electronic component is sealed
Dress；
Wherein, the nitride ceramics film layer is arranged in the substrate surface；
The first membrane of oxide ceramics layer stackup is incorporated in the nitride ceramics film surface；
The second membrane of oxide ceramics layer stackup is incorporated in the first oxide ceramics film surface.
7. preparation method according to claim 6, it is characterised in that: the packaging film is formed on the substrate, it is right
The step of electronic component is packaged include:
The nitride ceramics film layer is formed on the substrate；
Anneal oxidation processing is carried out to the surface of the nitride ceramics film layer, is formed on the surface of the nitride ceramics film layer
First oxide ceramics film layer；
The second oxide ceramics film layer is formed in the first oxide ceramics film surface.
8. preparation method according to claim 6, it is characterised in that:
The nitride ceramics is formed using ceramic nitrides as target raw material using the method for magnetron sputtering on the substrate
Film layer, the condition of the technique of magnetron sputtering are as follows: radio-frequency power is between 50-200W, plated film rate 0.5-1nm/s, sputtering pressure
0.5-2Pa。
9. preparation method according to claim 6, it is characterised in that:
Using the method for magnetron sputtering, using ceramic oxide as target raw material, in the first oxide ceramics film surface shape
At the second oxide ceramics film layer, the condition of the technique of magnetron sputtering are as follows: radio-frequency power is between 50-200W, plated film speed
Rate 0.5-1nm/s, sputtering pressure 0.5-2Pa.
10. according to the described in any item preparation methods of claim 7-9, it is characterised in that: the temperature of the anneal oxidation processing
It is 500-1000 DEG C, time 1-5h.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6319757B1 (en) * | 1998-07-08 | 2001-11-20 | Caldus Semiconductor, Inc. | Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates |
| CN102593371A (en) * | 2012-03-16 | 2012-07-18 | 四川长虹电器股份有限公司 | Packaging structure for organic light-emitting device (OLED) |
| US20140319476A1 (en) * | 2013-04-29 | 2014-10-30 | Samsung Display Co., Ltd. | Organic light-emitting display and method of manufacturing the same |
| CN205406561U (en) * | 2016-01-26 | 2016-07-27 | 易美芯光（北京）科技有限公司 | Ultraviolet LED device packaging hardware |
| CN107123753A (en) * | 2017-05-15 | 2017-09-01 | 福州大学 | A kind of film encapsulation method |
-
2017
- 2017-08-25 CN CN201710747620.5A patent/CN109427991B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6319757B1 (en) * | 1998-07-08 | 2001-11-20 | Caldus Semiconductor, Inc. | Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates |
| CN102593371A (en) * | 2012-03-16 | 2012-07-18 | 四川长虹电器股份有限公司 | Packaging structure for organic light-emitting device (OLED) |
| US20140319476A1 (en) * | 2013-04-29 | 2014-10-30 | Samsung Display Co., Ltd. | Organic light-emitting display and method of manufacturing the same |
| CN205406561U (en) * | 2016-01-26 | 2016-07-27 | 易美芯光（北京）科技有限公司 | Ultraviolet LED device packaging hardware |
| CN107123753A (en) * | 2017-05-15 | 2017-09-01 | 福州大学 | A kind of film encapsulation method |
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