CN109427566A - A kind of method for cutting wafer - Google Patents
A kind of method for cutting wafer Download PDFInfo
- Publication number
- CN109427566A CN109427566A CN201710777285.3A CN201710777285A CN109427566A CN 109427566 A CN109427566 A CN 109427566A CN 201710777285 A CN201710777285 A CN 201710777285A CN 109427566 A CN109427566 A CN 109427566A
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- China
- Prior art keywords
- wafer
- cutting
- cut
- growth substrates
- laser
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
The present invention provides a kind of method for cutting wafer, comprising: S1 provides wafer to be cut, includes growth substrates and epitaxial structure in wafer；S2 carries out primary cutting up to exposing growth substrates to epitaxial structure from wafer front along the cutting groove of wafer；S3 is just facing growth substrates along the cut mark once cut, from wafer and is carrying out secondary cut to predetermined depth；S4 cleaves it from the wafer back side along the cut mark of secondary cut, completes the cutting to wafer, obtains single tube core.During avoiding the growth substrates for using laser to be once cut to designated depth in the prior art with this, by high power laser in wafer groove surface aggregation amount of heat, situations such as causing heat to be unevenly distributed/radiate exception because of groove various types of materials difference, destroys the case where die surfaces structure makes chip failure appearance.
Description
Technical field
The present invention relates to semiconductor light-emitting-diode field, in particular to a kind of method for cutting wafer.
Background technique
LED is a kind of solid state semiconductor devices that can convert electrical energy into visible light, and principle of luminosity is to be electrically excited
Light, i.e., on PN junction plus after forward current, free electron and hole-recombination and shine, so that electric energy is directly converted into luminous energy.
LED, especially white light LEDs are widely used as a kind of new lighting source material, its fast, antidetonation with reaction speed
The advantages that property is good, the service life is long, energy conservation and environmental protection and it is fast-developing, be widely used in beautification of landscape and indoor and outdoor lighting etc. at present
Field.
Laser cutting is widely used in semiconductor and LED chip manufacturing, for wafer to be cut into crystal grain.But
Current laser cutting parameter is typically all to use once to be switched to designated depth (as shown in Figure 1, depth is generally in substrate thickness
Between 1/4 to 1/2) after so that wafer is cleaved into single crystal grain by way of splitting again.When wafer frontside structure is more complex especially more
When kind metal and overlapping insulating materials, because the heat that laser generates is unevenly distributed, component failure may be made, it is tight during volume production
Ghost image rings product yield.
Summary of the invention
In view of the above-mentioned problems, the present invention is intended to provide a kind of method for cutting wafer, effectively promotes the cutting efficiency of wafer
And stability.
In order to achieve the above objectives, technical solution provided by the invention is as follows:
A kind of method for cutting wafer, comprising:
S1 provides wafer to be cut, includes growth substrates and epitaxial structure in the wafer；
S2 carries out primary cutting up to exposing growth lining to epitaxial structure from wafer front along the cutting groove of wafer
Bottom；
S3 is just facing growth substrates along the cut mark once cut, from wafer and is carrying out secondary cut to predetermined depth；
S4 cleaves it from the wafer back side along the cut mark of secondary cut, completes the cutting to wafer, obtains list
Tube core.
It is further preferred that carrying out primary cutting in step S2 to epitaxial structure from wafer front and being grown up to exposing
In substrate, specifically:
Epitaxial structure cut up to exposing growth substrates from wafer front using the blade of predetermined width, it is described
The width of blade is less than the width of cutting groove.
It is further preferred that just facing growth substrates from wafer in step S3 and carrying out secondary cut into predetermined depth,
Specifically:
Secondary cut is carried out to predetermined depth to growth substrates from wafer front using the laser of the first predetermined power.
It is further preferred that the power bracket of first predetermined power is 4~10W.
It is further preferred that carrying out primary cutting in step S2 to epitaxial structure from wafer front and being grown up to exposing
In substrate, specifically:
Cutting is carried out up to exposing growth substrates to epitaxial structure from wafer front using the laser of the second predetermined power.
It is further preferred that just facing growth substrates from wafer in step S3 and carrying out secondary cut into predetermined depth,
Specifically:
Secondary cut is carried out to predetermined depth, institute to growth substrates from wafer front using the laser of the first predetermined power
The first predetermined power is stated greater than the second predetermined power.
It is further preferred that the power bracket of first predetermined power is 4~10W, the function of second predetermined power
Rate range is 1~4W.
In wafer cutting method provided by the invention, it is changed to existing twice using the mode that laser is once cut through
Cutting uses the laser cutting wafer surface of the blade or low-power of one fixed width during cutting first time
Epitaxial structure etc., later using the growth substrates of powerful laser cutting certain depth, the method finally cleaved using the back side
The cutting for completing wafer, obtains single tube core, avoids once being cut to designated depth using laser in the prior art with this
During growth substrates, by high power laser in wafer groove surface aggregation amount of heat, because groove various types of materials difference is led
Pyrogenicity amount is unevenly distributed/radiates the case where situations such as exception destruction die surfaces structure makes chip failure appearance.It was verified that should
Cutting method cut relative to the mode that existing laser is once cut through after electrical Yield lmproved obvious (certain class produces in producing line at present
Electrical yield is only within 50% after the cutting of product wafer), reach 99% or more.
Detailed description of the invention
Fig. 1 is cutting schematic diagram of laser in the prior art；
Fig. 2 is method for cutting wafer flow diagram in the present invention；
Fig. 3 is to carry out first time cutting schematic diagram to wafer using blade in the present invention；
Fig. 4 is to use laser secondary cut schematic diagram on the basis of cutting for the first time shown in Fig. 3 in the present invention；
Fig. 5 is to carry out first time cutting schematic diagram to wafer using low power laser in the present invention；
Fig. 6 is to use laser secondary cut schematic diagram on the basis of cutting for the first time shown in Fig. 5 in the present invention；
Fig. 7 is to cleave schematic diagram in the present invention.
Specific embodiment
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, Detailed description of the invention will be compareed below
A specific embodiment of the invention.It should be evident that drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing, and obtain other embodiments.
To make simplified form, part related to the present invention is only schematically shown in each figure, their not generations
Its practical structures as product of table.
Based on the prior art in such a way that a laser is cut through to wafer cut present in deficiency, the present invention
A kind of completely new method for cutting wafer is provided, as shown in Fig. 2, including: that S1 provides crystalline substance to be cut in the method for cutting wafer
Disk includes growth substrates and epitaxial structure in wafer；S2 along wafer cutting groove, from wafer front to epitaxial structure
Primary cutting is carried out until exposing growth substrates；S3 is just facing growth substrates along the cut mark once cut, from wafer and is carrying out two
It is secondary to be cut to predetermined depth；S4 cleaves it from the wafer back side along the cut mark of secondary cut, and wafer is cut in completion
It cuts, obtains single tube core.
In one embodiment, after obtaining wafer to be cut, wafer is fixed and (e.g., is pasted in tunica albuginea
On)；Later, using the blade of predetermined width 4 from wafer front, epitaxial structure 1 cut until exposing along cutting groove
Growth substrates 2, wherein the width of blade is less than the width of cutting groove 5, as shown in Figure 3；Later, the is used from wafer front
The laser of one predetermined power is to growth substrates progress secondary cut to predetermined depth, as shown in Figure 4；Finally, along secondary cut
Cut mark cleaves it from the wafer back side using chopper 6, as shown in fig. 7, completing the cutting to wafer, obtains single
Tube core.
In the present embodiment, before using laser cutting, using blade to the epitaxial structure etc. on growth substrates surface
It is cut, in case high power destroys the electric property of tube core.Specifically, the width of blade is less than cutting between tube core in wafer
Slot is cut, e.g., in one example, the width of cutting groove is 60 μm, then it is 20 μm, 25 μm, 30 μm, 35 μm that width, which can be used,
Deng blade carry out first time cutting, certainly, in order to further increase cutting yield, blade is carried out along the center of cutting groove
Cutting.
After the cuttings such as the epitaxial structure on growth substrates surface are completed, the laser cutting for further using certain power is certain
The growth substrates of depth are convenient for subsequent splitting.Specifically, the power bracket of the first predetermined power is 4~10W.In addition, giving birth to here
The depth of cut of long substrate is determined according to the actual situation, e.g., in one example, growth substrates with a thickness of 175 μm, then swash
Light is cut to 70 μm of depth, then is cleaved.In other instances, 50 μm, 60 μm, 80 μm etc. can also be cut to, here
It is not specifically limited.In addition, growth substrates here can be silicon substrate, Sapphire Substrate etc., specific limit is not done equally here
It is fixed.
In one example, the width of cutting groove is 60 μm；Growth substrates are silicon substrate, with a thickness of 175 μm, in cutting process
In: epitaxial structure is cut until exposing silicon substrate using the blade of width 25um, removes the complexity in cutting groove
Structure exposes single substrate material；Later, cutting silicon substrate, depth of cut 70um are cut by laser using 8W；Finally, by brilliant
Disk is placed on splitting machine, and the silicon substrate back side is cleaved, and is completed cutting and is obtained single tube core.
It is noted that extension can be cut according to the actual situation during carrying out first time cutting using blade
Certain depth growth substrates are cut while structure, e.g., the thickness range of cutting is 15~30um.
In another embodiment, after obtaining wafer to be cut, wafer is fixed and (e.g., is pasted in tunica albuginea
On)；Later, cutting is carried out up to exposing growth lining to epitaxial structure from wafer front using the laser 31 of the second predetermined power
Bottom, as shown in Figure 5；Later, from wafer front using the first predetermined power laser to growth substrates carry out secondary cut to
Predetermined depth, as shown in Figure 6；Finally, being cleaved from the wafer back side using chopper 6 to it, such as along the cut mark of secondary cut
Shown in Fig. 7, the cutting to wafer is completed, single tube core is obtained.
In the present embodiment, before using high power laser light cutting, swashing for low-power (the second predetermined power) is used
Light cuts the epitaxial structure etc. on growth substrates surface, in case high power destroys the electric property of tube core.Specifically, second is pre-
If the power bracket of power is 1~4W.Certainly, in order to further increase cutting yield, laser along the center of cutting groove into
Row cutting.
After the cuttings such as the epitaxial structure on growth substrates surface are completed, the laser cutting for further using certain power is certain
The growth substrates of depth are convenient for subsequent splitting.Specifically, the power bracket of the first predetermined power is 4~10W.In addition, giving birth to here
The depth of cut of long substrate is determined according to the actual situation, e.g., in one example, growth substrates with a thickness of 175 μm, then swash
Light is cut to 70 μm of depth, then is cleaved.In other instances, 50 μm, 60 μm, 80 μm etc. can also be cut to, here
It is not specifically limited.In addition, growth substrates here can be silicon substrate, Sapphire Substrate etc., specific limit is not done equally here
It is fixed.
In one example, the width of cutting groove is 60 μm；Growth substrates are silicon substrate, with a thickness of 175 μm, in cutting process
In: use power to be cut until exposing silicon substrate for the low power laser of 3W to epitaxial structure first, removal cutting
Labyrinth in slot exposes single substrate material；Later, it is cut by laser cutting silicon substrate using 8W, depth of cut is
70um；Finally, wafer is placed on splitting machine, the silicon substrate back side is cleaved, and is completed cutting and is obtained single tube core.
Claims (7)
1. a kind of method for cutting wafer, which is characterized in that include: in the method for cutting wafer
S1 provides wafer to be cut, includes growth substrates and epitaxial structure in the wafer；
S2 carries out primary cutting up to exposing growth substrates to epitaxial structure from wafer front along the cutting groove of wafer；
S3 is just facing growth substrates along the cut mark once cut, from wafer and is carrying out secondary cut to predetermined depth；
S4 cleaves it from the wafer back side along the cut mark of secondary cut, completes the cutting to wafer, obtains single pipe
Core.
2. method for cutting wafer as described in claim 1, which is characterized in that in step S2, from wafer front to epitaxy junction
Structure once cut up to exposing in growth substrates, specifically:
Cutting is carried out up to exposing growth substrates, the blade to epitaxial structure from wafer front using the blade of predetermined width
Width be less than cutting groove width.
3. method for cutting wafer as claimed in claim 1 or 2, which is characterized in that in step S3, just face to grow from wafer
Substrate carries out secondary cut into predetermined depth, specifically:
Secondary cut is carried out to predetermined depth to growth substrates from wafer front using the laser of the first predetermined power.
4. method for cutting wafer as claimed in claim 3, which is characterized in that the power bracket of first predetermined power is 4
~10W.
5. method for cutting wafer as described in claim 1, which is characterized in that in step S2, from wafer front to epitaxy junction
Structure once cut up to exposing in growth substrates, specifically:
Cutting is carried out up to exposing growth substrates to epitaxial structure from wafer front using the laser of the second predetermined power.
6. method for cutting wafer as claimed in claim 5, which is characterized in that in step S3, growth lining is just being faced from wafer
Bottom carries out secondary cut into predetermined depth, specifically:
Secondary cut is carried out to predetermined depth to growth substrates from wafer front using the laser of the first predetermined power, described the
One predetermined power is greater than the second predetermined power.
7. method for cutting wafer as claimed in claim 6, which is characterized in that the power bracket of first predetermined power is 4
~10W, the power bracket of second predetermined power are 1~4W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710777285.3A CN109427566A (en) | 2017-09-01 | 2017-09-01 | A kind of method for cutting wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710777285.3A CN109427566A (en) | 2017-09-01 | 2017-09-01 | A kind of method for cutting wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109427566A true CN109427566A (en) | 2019-03-05 |
Family
ID=65504921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710777285.3A Pending CN109427566A (en) | 2017-09-01 | 2017-09-01 | A kind of method for cutting wafer |
Country Status (1)
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Citations (12)
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|---|---|---|---|---|
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| JPH11177137A (en) * | 1997-12-16 | 1999-07-02 | Nichia Chem Ind Ltd | Manufacture of nitride semiconductor element |
| US6215194B1 (en) * | 1998-10-01 | 2001-04-10 | Mitsubishi Denki Kabushiki Kaisha | Wafer sheet with adhesive on both sides and attached semiconductor wafer |
| US20050035100A1 (en) * | 2003-08-12 | 2005-02-17 | Satoshi Genda | Method of dividing a plate-like workpiece |
| US20090191693A1 (en) * | 2008-01-29 | 2009-07-30 | Disco Corporation | Wafer processing method |
| TW201118936A (en) * | 2009-11-27 | 2011-06-01 | Powertech Technology Inc | Method for cutting wafer |
| CN102738313A (en) * | 2011-04-01 | 2012-10-17 | 山东华光光电子有限公司 | Chip cutting method for increasing LED chip light extraction |
| US20130023076A1 (en) * | 2011-07-21 | 2013-01-24 | Hamamatsu Photonics K.K. | Method for manufacturing light-emitting device |
| CN103441103A (en) * | 2013-08-29 | 2013-12-11 | 华进半导体封装先导技术研发中心有限公司 | Wafer cutting method |
| CN103456857A (en) * | 2013-09-27 | 2013-12-18 | 聚灿光电科技(苏州)有限公司 | Light-emitting diode (LED) chip and manufacturing method thereof |
| US20140191352A1 (en) * | 2013-01-09 | 2014-07-10 | China Wafer Level Csp Co., Ltd. | Wafer-level packaging method of bsi image sensors having different cutting processes |
| CN105336686A (en) * | 2015-09-30 | 2016-02-17 | 中国电子科技集团公司第五十五研究所 | Cutting method of composite structure SiC substrate device |
-
2017
- 2017-09-01 CN CN201710777285.3A patent/CN109427566A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05267449A (en) * | 1992-03-19 | 1993-10-15 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
| JPH11177137A (en) * | 1997-12-16 | 1999-07-02 | Nichia Chem Ind Ltd | Manufacture of nitride semiconductor element |
| US6215194B1 (en) * | 1998-10-01 | 2001-04-10 | Mitsubishi Denki Kabushiki Kaisha | Wafer sheet with adhesive on both sides and attached semiconductor wafer |
| US20050035100A1 (en) * | 2003-08-12 | 2005-02-17 | Satoshi Genda | Method of dividing a plate-like workpiece |
| US20090191693A1 (en) * | 2008-01-29 | 2009-07-30 | Disco Corporation | Wafer processing method |
| TW201118936A (en) * | 2009-11-27 | 2011-06-01 | Powertech Technology Inc | Method for cutting wafer |
| CN102738313A (en) * | 2011-04-01 | 2012-10-17 | 山东华光光电子有限公司 | Chip cutting method for increasing LED chip light extraction |
| US20130023076A1 (en) * | 2011-07-21 | 2013-01-24 | Hamamatsu Photonics K.K. | Method for manufacturing light-emitting device |
| US20140191352A1 (en) * | 2013-01-09 | 2014-07-10 | China Wafer Level Csp Co., Ltd. | Wafer-level packaging method of bsi image sensors having different cutting processes |
| CN103441103A (en) * | 2013-08-29 | 2013-12-11 | 华进半导体封装先导技术研发中心有限公司 | Wafer cutting method |
| CN103456857A (en) * | 2013-09-27 | 2013-12-18 | 聚灿光电科技(苏州)有限公司 | Light-emitting diode (LED) chip and manufacturing method thereof |
| CN105336686A (en) * | 2015-09-30 | 2016-02-17 | 中国电子科技集团公司第五十五研究所 | Cutting method of composite structure SiC substrate device |
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Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Applicant after: Jingneng optoelectronics Co.,Ltd. Address before: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Applicant before: LATTICE POWER (JIANGXI) Corp. |