CN109427403B - 一种放电电路及存储器 - Google Patents
一种放电电路及存储器 Download PDFInfo
- Publication number
- CN109427403B CN109427403B CN201710780723.1A CN201710780723A CN109427403B CN 109427403 B CN109427403 B CN 109427403B CN 201710780723 A CN201710780723 A CN 201710780723A CN 109427403 B CN109427403 B CN 109427403B
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- CN
- China
- Prior art keywords
- switching tube
- control signal
- module
- negative
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/071—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps adapted to generate a negative voltage output from a positive voltage source
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710780723.1A CN109427403B (zh) | 2017-09-01 | 2017-09-01 | 一种放电电路及存储器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710780723.1A CN109427403B (zh) | 2017-09-01 | 2017-09-01 | 一种放电电路及存储器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109427403A CN109427403A (zh) | 2019-03-05 |
CN109427403B true CN109427403B (zh) | 2020-11-06 |
Family
ID=65513043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201710780723.1A Active CN109427403B (zh) | 2017-09-01 | 2017-09-01 | 一种放电电路及存储器 |
Country Status (1)
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CN (1) | CN109427403B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111934542B (zh) * | 2019-05-13 | 2021-10-08 | 北京兆易创新科技股份有限公司 | 电荷泵稳压电路、稳压方法以及非易失存储器 |
CN110265078B (zh) * | 2019-06-24 | 2020-08-18 | 长江存储科技有限责任公司 | 一种掉电保护电路 |
CN112600410B (zh) * | 2020-12-24 | 2022-01-04 | 芯天下技术股份有限公司 | 一种负压电荷泵的放电电路及非易失型储存器 |
CN113470720B (zh) * | 2021-06-29 | 2022-11-04 | 长江存储科技有限责任公司 | 放电电路及存储器的放电控制电路系统 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0668593B1 (en) * | 1994-02-21 | 2001-09-26 | STMicroelectronics S.r.l. | Regulation circuit and method for the erasing phase of non-volatile memory cells |
KR100481841B1 (ko) * | 1997-11-25 | 2005-08-25 | 삼성전자주식회사 | 음의고전압을방전시키기위한회로를구비한플래시메모리장치 |
CN101258554A (zh) * | 2005-07-12 | 2008-09-03 | 美光科技公司 | 用以改进非易失性存储器中快反向的负电压放电方案 |
CN101504866A (zh) * | 2008-02-04 | 2009-08-12 | 力晶半导体股份有限公司 | 集成电路与放电电路 |
CN103514937A (zh) * | 2012-06-18 | 2014-01-15 | 北京兆易创新科技股份有限公司 | 一种存储器放电电路 |
CN106160459A (zh) * | 2015-03-25 | 2016-11-23 | 展讯通信(上海)有限公司 | 快速瞬态响应的电荷泵电路系统 |
-
2017
- 2017-09-01 CN CN201710780723.1A patent/CN109427403B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0668593B1 (en) * | 1994-02-21 | 2001-09-26 | STMicroelectronics S.r.l. | Regulation circuit and method for the erasing phase of non-volatile memory cells |
KR100481841B1 (ko) * | 1997-11-25 | 2005-08-25 | 삼성전자주식회사 | 음의고전압을방전시키기위한회로를구비한플래시메모리장치 |
CN101258554A (zh) * | 2005-07-12 | 2008-09-03 | 美光科技公司 | 用以改进非易失性存储器中快反向的负电压放电方案 |
CN101504866A (zh) * | 2008-02-04 | 2009-08-12 | 力晶半导体股份有限公司 | 集成电路与放电电路 |
CN103514937A (zh) * | 2012-06-18 | 2014-01-15 | 北京兆易创新科技股份有限公司 | 一种存储器放电电路 |
CN106160459A (zh) * | 2015-03-25 | 2016-11-23 | 展讯通信(上海)有限公司 | 快速瞬态响应的电荷泵电路系统 |
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Publication number | Publication date |
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CN109427403A (zh) | 2019-03-05 |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20201013 Address after: 2301, 23rd floor, East Building, building B, Tengfei Kehui City, Singapore, No.88 Tiangu 7th Road, hi tech Zone, Xi'an City, Shaanxi Province 710000 Applicant after: XI'AN GEYI ANCHUANG INTEGRATED CIRCUIT Co.,Ltd. Applicant after: HEFEI GEYI INTEGRATED CIRCUIT Co.,Ltd. Applicant after: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. Address before: 230601, 1 Pearl Plaza, Hefei economic and Technological Development Zone, Anhui Applicant before: HEFEI GEYI INTEGRATED CIRCUIT Co.,Ltd. Applicant before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |
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GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 23 / F, East Building, Tengfei Kehui City, 88 tianguqi Road, high tech Zone, Xi'an, Shaanxi 710000 Patentee after: XI'AN GEYI ANCHUANG INTEGRATED CIRCUIT Co.,Ltd. Patentee after: HEFEI GEYI INTEGRATED CIRCUIT Co.,Ltd. Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 2301, 23 / F, East Building, building B, Tengfei Kehui City, 88 Tiangu 7th Road, high tech Zone, Xi'an, Shaanxi, 710000 Patentee before: XI'AN GEYI ANCHUANG INTEGRATED CIRCUIT Co.,Ltd. Patentee before: HEFEI GEYI INTEGRATED CIRCUIT Co.,Ltd. Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |