CN109423696A - A kind of grower of multilayer organic single-crystal structure - Google Patents
A kind of grower of multilayer organic single-crystal structure Download PDFInfo
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- CN109423696A CN109423696A CN201710736116.5A CN201710736116A CN109423696A CN 109423696 A CN109423696 A CN 109423696A CN 201710736116 A CN201710736116 A CN 201710736116A CN 109423696 A CN109423696 A CN 109423696A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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Abstract
The present invention relates to a kind of growers of multilayer organic single-crystal structure, utilize the multilayers organic single-crystal structures such as a variety of organic semiconducting materials growth pn-junction, hetero-junctions, Quantum Well, multiple quantum wells.The equipment feature are as follows: 1. at least tools are respectively used to the distillation of material and the growth of monocrystalline there are two temperature-controlled zones；2. two temperature-controlled zones are adjacent parallel, temperature can quickly, independently regulate and control；3. after first layer crystal growth, contacting the replacement that source material can be completed with air without single-crystal surface, subsequent second layer crystal growth is carried out.
Description
Technical field
The present invention relates to organic semiconducting materials technical fields, and in particular to a kind of growth dress of multilayer organic single-crystal structure
It sets.
Background technique
Pn-junction is to prepare solar battery (SC), light emitting diode (LED), laser diode (LD) and bipolar junction transistor
The key structure of equal photoelectricity and electronic semiconductor components.Currently, by the next-generation photoelectric device of expectation --- organic light emission two
Pole pipe (OLED) has realized mass production, applied to the preparation of TV and display screen, and gradually enters into people's lives.So
And other devices in addition to OLED, such as organic solar batteries (OSC), organic laser (OLD) etc., still in basis
Research and the developing stage deeply understood.
Compared to organic polycrystalline material, organic single-crystal material eliminates crystal boundary interference, the structure with high-sequential, thus
It is able to reflect the intrinsic carrier transmission characteristics of material, the field effect transistor prepared using organic single crystal thin film as active layer
(TFT) it has been widely used in the performance study of material.Since growth multilayer mono-crystalline structures have great technical difficulty, at present
Research still focus primarily upon the device architecture based in single layer monocrystal thin films.Forefathers start sex work present it is organic
The present flourish vital of semiconductor field and following unlimited possibility, rubrene (rubrene) are used as high-performance p-type organic semiconductor material
The mobility of the representative of material, monocrystalline TFT is up to 40cm2/ Vs,[1]And there is anisotropic transmission characteristic.[2,3]In addition, red
The diffusion length of exciton is up to a few micrometers in glimmering alkene monocrystalline, and diffusion length only has several nanometers in corresponding polycrystalline.[4]Mobility and
The advantage of exciton diffusion length makes organic single-crystal pn-junction become the ideal list for preparing high performance machine solar battery (OSC)
Member.It has been reported that organic single-crystal SC structure can be grown using the mixed solution of N-shaped and p-type material.[5,6]Although this method
The double-deck mono-crystalline structures have successfully been obtained, but device efficiency is extremely low, more crucial problem is, cannot achieve the size of monocrystal thin films
And thickness control.If the method for growth monocrystalline p-i-n structure (including heterojunction structure) can be developed, can utilize organic
The device that design of material and processability can match in excellence or beauty with inorganic material.However, due to lacking suitable manufacturing equipment, it is still difficult at present
To obtain the full mono-crystalline structures for accurately controlling interface, thickness.
Currently, being dedicated to the preparation of monocrystalline PN junction and hetero-junctions there are many research institution, however rarely has document report success
Case.The seminar of Japan has studied with monocrystalline aphthacene[3]Or pentacene[4-5]Film is substrate, grows C60Mechanism.They
Using vacuum evaporation equipment, C is grown by changing underlayer temperature60, however the second layer film obtained is not monocrystalline.Other projects
Group attempts to study the characteristic of organic pn-junction, but equally can not on organic single-crystal substrate successful growth second layer monocrystalline.At this
In the case of kind, Hu Wenping, Briseno and common author use ten hexafluoro CuPc (F16CuPc, n-type material) and CuPc
(CuPc, p-type material) obtains organic single-crystal pn-junction nanobelt using the method for vapor phase epitaxial growth.[6]They are by pre- Mr.
Template of the long CuPc single crystal nano-belt as epitaxial growth, ten hexafluoro CuPcs of induction form one-dimensional monocrystalline hetero-junctions,
And have studied the performance of the organic solar batteries based on the monocrystalline hetero-junctions.Although this work completes growth organic single-crystal
The challenge of hetero-junctions, but can not systematically carry out deeper into research.Therefore, it is necessary to develop a set of growth monocrystalline pn, heterogeneous
The new method of knot and multilayered structure.Bibliography
[1]J.Takeya,M.Yamagishi,Y.Tominari,R.Hirahara,Y.Nakazawa,T.Nishikawa,
T.Kawase,T.Shimoda,S.Ogawa,Appl.Phys.Lett.90,102120(2007).
[2]V.C.Sundar,J.Zaumseil,V.Podzorov,E.Menard,R.L.Willett,T.Someya,
M.E.Gershenson,J.A.Rogers,Science 303,1644(2004).
[3]C.Reese and Z.Bao,Adv.Mater.19,4535(2007).
[4]H.Najafov,B.Lee,Q.Zhou,L.C.Feldman,and V.Podzorov,Nature Mater.9,
938(2010).
[5]C.Fan,A.P.Zoombelt,H.Jiang,W.Fu,J.Wu,W.Yuan,Y.Wang,H.Li,H.Chen,and
Z.Bao,Adv.Mater.2013,25,5762–5766.
[6]H.Li,C.Fan,W.Fu,H.L.Xin,and H.Chen,Angew.Chem.54,956–960(2015).
[7]Y.Zhang,H.Dong,Q.Tang,W.Chen,S.Ferdous,S.C.B.Mannsfeld,W.Hu,
A.L.Briseno,J.Am.Chem.Soc.132,11580-11584(2010).
Summary of the invention
The technical problems to be solved by the invention include: to provide a kind of grower of multilayer organic single-crystal structure, are solved
Multilayer organic single-crystal structure forms difficult problem in the prior art.
Technical proposal that the invention solves the above-mentioned problems are as follows: a kind of grower of multilayer organic single-crystal structure is provided, is wrapped
Include be placed in inert gas atmosphere protection under vapor phase growth unit, the vapor phase growth unit include air inlet end socket and with institute
State the air-flow casing that air inlet end socket is detachably connected, setting source material sublimation zone and vitellarium in the air-flow casing.
In the grower of multilayer organic single-crystal structure provided by the invention, the air inlet end socket and the air-flow casing
The region of connection is source material lead-in area, opens the connection between the air inlet end socket and the air-flow casing with more conversion materials.
In the grower of multilayer organic single-crystal structure provided by the invention, the air-flow casing and the air inlet end socket
Junction setting the first O-ring, the first water-cooling system is installed near first O-ring.
In the grower of multilayer organic single-crystal structure provided by the invention, the vapor phase growth unit further includes outlet
End socket, the one end of the air-flow casing far from the air inlet end socket are connect with the outlet end socket.
In the grower of multilayer organic single-crystal structure provided by the invention, the air-flow casing and the outlet end socket
It is detachably connected, the second O-ring that the junction of the air-flow casing and the outlet end socket is arranged, second O-ring
The second water-cooling system of installation nearby.
In the grower of multilayer organic single-crystal structure provided by the invention, the source material sublimation zone and the growth
Section is greater than 5mm every setting, spacing distance, controls temperature using independent resistance heating plate respectively.
In the grower of multilayer organic single-crystal structure provided by the invention, the source material sublimation zone and the growth
Area can be slided along track, and be fixed on specific site.
It further include covering the source material from top in the grower of multilayer organic single-crystal structure provided by the invention
The top of the drainage part of sublimation zone and the vitellarium, the drainage part slightly tilts, and keeps its opening big, exports small, internal gas flow
Directly blow to substrate.
In the grower of multilayer organic single-crystal structure provided by the invention, covering is extended in the bottom of the drainage part
Plate, the cover plate are arranged in interval at least part gap of the source material sublimation zone and the vitellarium.
In the grower of multilayer organic single-crystal structure provided by the invention, the first carrier gas is set on the air inlet end socket
It introduces pipe and the second carrier gas introduces pipe, first carrier gas introduces the airflow direction of pipe and the side of radially extending of the air-flow casing
To parallel, second carrier gas introduce the airflow direction of pipe and the air-flow casing to radially extend direction vertical.
The invention has the following beneficial effects: the apparatus structure is compact, and vapor phase growth unit and air exclusion are beaten
When opening vapor phase growth unit replacement material, material is not necessarily to contact with air with monocrystalline.Each temperature-controlled zones use independence
Resistance heating plate control temperature, therefore without Temperature Distribution, and quick, the accuracy controlling of certifiable temperature in the face in.Due to source
The steam of material directly blows to substrate, and compared to traditional physical vapor transport equipment, the source material loss of the equipment is less.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples, in attached drawing:
Fig. 1 is the schematic diagram of conventional physical vapor transmission device；
Fig. 2 is the structural schematic diagram of the grower of multilayer organic single-crystal structure of the present invention；
Fig. 3 is the structural schematic diagram of the grower vapor phase growth unit of multilayer organic single-crystal structure of the present invention；
Fig. 4 is that the grower of multilayer organic single-crystal structure of the present invention drains the structural schematic diagram of part；
Fig. 5 is saturation (unsaturation) curve of rubrene monocrystalline；
Fig. 6 is the rubrene monocrystalline grown using the grower of multilayer organic single-crystal structure of the present invention；(a) source material liter
300 DEG C of magnificent temperature, 200 DEG C of vitellarium temperature；(b) 330 DEG C of source material sublimation temperature, 220 DEG C of vitellarium temperature；(c) source material
320 DEG C of sublimation temperature, 210 DEG C of vitellarium temperature.
Specific embodiment
Following embodiment is intended to illustrate the embodiment of present aspect, and is understood not to the restriction to invention scope.
Fig. 1 illustrates the schematic diagram of conventional physical vapor transmission device.The design of this equipment is based on material purifying equipment,
There are two temperature-controlled zones, respectively source material sublimation zone (temperature marker T1) and vitellarium (temperature marker T2, T2 for tool
<T1).The saturated vapor of source material is transported to vitellarium from sublimation zone as carrier gas by nitrogen and/or argon gas.Substrate is placed in
Vitellarium, under the conditions of oversaturated, monocrystalline is precipitated in the steam of source material on substrate.Such equipment is initially used to distil
Mode purify source material, therefore vitellarium has biggish Temperature Distribution, and furnace body is longer.
Following problems will be generated using equipment growth multilayered structure:
(1) after terminating one layer of crystal growth, it is necessary to open quartzy furnace body to replace source material and grow the second layer (different materials
Material) monocrystalline.Current existing gas purification apparatus furnace body is longer, and inconvenience is put into the glove box by nitrogen protection.Therefore it beats
The operation of blow-on body will lead to single-crystal surface and be exposed in air.Air will destroy between two layers of monocrystalline the pollution of single-crystal surface
Interface.
(2) if using existing gas purification apparatus, in order to which substrate to be placed in inner tube, diameter of inner pipe should at least reach
To 1 inch.However, the source material steam of high temperature will be moved along inner tube upper wall, several due to having biggish Temperature Distribution in inner tube
All single crystals can all be deposited on inner tube upper wall, rather than be placed on the substrate of inner tube lower part, can not efficiently collect monocrystalline.
(3) existing gas purification apparatus uses Resistant heating, and furnace body horizontal direction exists larger with radial direction
Temperature Distribution, it is difficult to accurately and rapidly control vitellarium temperature.
In order to repeatably obtain the good monocrystalline in interface, it is necessary in the surface and air for avoiding source material and monocrystal thin films
Moisture, therefore, equipment will be placed in full of inert gas atmosphere protection under, vapor phase growth unit is answered small and compact.
Fig. 2 is the structural schematic diagram of the grower of multilayer organic single-crystal structure of the present invention, as shown in Fig. 2, the growth fills
Setting at least tool, there are two temperature-controlled zones, are respectively used to the distillation of material and the growth of monocrystalline, two temperature-controlled zones phases
The temperature of adjacent parallel (minimum spacing is 5 millimeters), each temperature-controlled zones can quickly, independently regulate and control, and vapor phase growth unit 100 is put
It is placed under inert gas atmosphere protection, without making internal tube furnace contact i.e. replaceable source material with the aqueous vapor in air.For
Description is convenient, and unless otherwise specified, hereafter " 100 furnace body of vapor phase growth unit ", " furnace body " refer both to vapor phase growth unit 100.
Vapor phase growth unit 100 includes air inlet end socket 120 (referring to Fig. 3) and is detachably connected with air inlet end socket 120
Air-flow casing 110, the interior setting source material sublimation zone 140 of air-flow casing 110 and vitellarium 150.The principle of its organic single-crystal growth
It is similar with conventional physical meteorology transmission device.For the volume for reducing 100 furnace body of vapor phase growth unit, 140 He of source material sublimation zone
Vitellarium 150 is adjacent to be placed in parallel.For quick precise control of temperature, resistance heating plate system has been used.It, can by this design
Solve the problems, such as the longer inconvenient whole progress inert gas atmosphere protection of furnace body.
In the present invention, it is preferred that the region that air inlet end socket 120 is connect with air-flow casing 110 is source material lead-in area 160,
The connection between air inlet end socket 120 and air-flow casing 110 is opened with more conversion materials.It is put since vapor phase growth unit 100 is whole
It is placed under the atmosphere protection of inert gas, such as vapor phase growth unit 100 is directly placed in the glove box 200 full of inert gas
In, the presence of glove box 200 makes furnace body and air exclusion, and when opening furnace body more conversion materials, material and monocrystalline are not necessarily to and sky
Gas contact.
Fig. 3 is the structural schematic diagram of the grower vapor phase growth unit of multilayer organic single-crystal structure of the present invention, source material
Sublimation zone 140 and the setting of the interval of vitellarium 150, spacing distance are greater than 5mm, control temperature using independent resistance heating plate respectively
Degree.For ease of operation, sublimation zone 140 and vitellarium 150 can be slided along track, and be securable to specific site.Heating plate
Entire face temperatures are uniform, without Temperature Distribution in face, and can guarantee quick, the accuracy controlling of temperature.
The first O-ring 121 (referring to fig. 2) that the junction of air-flow casing 110 and air inlet end socket 120 is arranged, due to needing
Source material is warming up to the distillation for guaranteeing material close to 400 DEG C, to avoid the first O-ring 121 of damage, the first O-ring 121
The first water-cooling system 170 (referring to fig. 2) of installation nearby.
Similar, vapor phase growth unit 100 further includes outlet end socket 130, and it is remote that outlet end socket 130 is located at air-flow casing 110
One end from air inlet end socket 120, i.e. the two of air-flow casing 110 section are separately connected air inlet end socket 120 and outlet end socket 130, so that
The growth for being convenient for multilayer organic single-crystal structure in the flow area being quite isolated is formed inside air-flow casing 110.Preferably, air-flow
Casing 110 is detachably connected with outlet end socket 130, and second that the junction of air-flow casing 110 and outlet end socket 130 is arranged is O-shaped
It enclosed for 131 (referring to fig. 2), second water-cooling system 180 (referring to fig. 2) is installed to avoid damage near the second O-ring 131.
For the temperature distribution problems for solving inner tube, we have prepared drainage part 160 as shown in Figure 4, which can
Think quartzy accessory.The accessory covers source material sublimation zone 140 and vitellarium 150 from top.161 slightly tilt at the top of accessory, make
It is open 162 greatly, and outlet 163 is small, and internal gas flow can directly blow to substrate 164.
Preferably, cover plate 165 is extended in the bottom for draining part 160, and cover plate 165 is arranged in source material sublimation zone 140
In interval at least part gap of vitellarium 150.Bottom is partially covered, to avoid distillation source material gas from distillation
Area and with diffuse to outer tube in the gap of vitellarium 150.Since the steam of source material directly blows to substrate 164, compared to traditional
The source material loss of physical vapor transport equipment, the equipment is less.
Preferably, in conjunction with Fig. 2-4, it is arranged that the first carrier gas introduces pipe 122 and the second carrier gas introduces pipe on air inlet end socket 120
123, the first carrier gas introduces the airflow direction of pipe 122 and air-flow casing 110 radially extends direction general parallel orientation, and the second carrier gas draws
The airflow direction and air-flow casing 110 for entering pipe 123 radially extend direction at an angle.Most preferably, the first carrier gas introduces
The airflow direction of pipe 122 and air-flow casing 110 radially extend that direction is parallel, the second carrier gas introduce the airflow direction of pipe 123 with
Air-flow casing 110 radially extend that direction is vertical and the second carrier gas introduces the setting of pipe 123 on 120 top of air inlet end socket so that the
Two carrier gas introduce the carrier gas that pipe 123 is blown out and spray downwards.In this way, carrier gas enters air-flow casing 110, the direction of air-flow and drainage part
The inclined direction at 160 tops is consistent.Not only promote internal gas flow that can directly blow to substrate, but also guarantee the carrier gas stream of air-flow casing 110
It is dynamic.
The CONSTRUCTED SPECIFICATION of embodiment grower
(1) source material sublimation zone
At least two source materials can be used in the equipment.The fusing point of most small organic molecules is lower than 400 DEG C, utilizes resistance
Source material can be warming up to close to 400 DEG C by heating system, to guarantee the distillation of material.It, can be by air-flow casing when replacing source material
It is separated with equipment.The air in system quickly can be replaced with into inert carrier gas (nitrogen or argon gas) using vacuum pump.Technological difficulties
Be, equipment work when, need by furnace body temperature control at 400 DEG C or so, and air-flow casing used with equipment junction it is O-shaped
Circle (7075) only 327 DEG C of the upper limit temperature of heat tolerance.Therefore, we introduce water-cooling system near O-ring to avoid damage
It is bad.
(2) source material lead-in area
Multiple connectors need to be used in source material lead-in area, however, being based on previous reasons, it is necessary to avoid using with O-shaped
The connector of circle, therefore, we used a kind of metal connector 190, (Swagelok, SS-6BW-1/4or 3/8, highest is resistance to
483 DEG C of hot temperature, structure is referring to Fig. 1).Similar, similar metal connector 190 is also used on outlet end socket 130.
(3) vitellarium
There are two temperature-controlled zones in air-flow casing.Source material sublimation zone 140 and vitellarium 150 drain part by same
160 coverings, such as covered using quartzy accessory.Draining at the top of part 160 is the clinoplain angled with airflow direction, is put
It is placed in air-flow casing 110, to guarantee that air-flow directly blows to substrate.
The single crystal growth process of 2 rubrene of embodiment
We are using a kind of typical organic small molecule material --- rubrene explains the crystal growth in the equipment
Journey.
The principle of vapor phase method crystal growth can be explained by being saturated (supersaturation) curve, which illustrates certain
Under partial pressure, the relationship of materials behavior and temperature.Using this equipment, we obtain the growth rhythm of rubrene monocrystalline, such as
Shown in Fig. 5.Source material heats up to obtain saturated vapor, can be by according to source material sublimation temperature under conditions of flow rate of carrier gas is constant
Saturation curve determines partial pressure.When the saturated vapor of source material reaches vitellarium 150 with carrier gas, partial pressure is constant, and temperature will reduce
To 150 temperature of vitellarium.If gas reaches hypersaturated state (lower than supersaturated curve), oversaturated part generates nucleus.It is real
It issues after examination and approval now, when 150 temperature of the vitellarium of setting is higher than corresponding supersolubility temperature, no crystal formation；When 150 temperature of vitellarium
When equal to corresponding supersolubility temperature, the biggish monocrystalline of a small amount of volume can be formed；When 150 temperature of vitellarium is lower than corresponding satiety
When with temperature, a large amount of small monocrystalline can be formed.
In addition, it was found that, the form of 150 temperature influence monocrystalline of vitellarium, as shown in Figure 6.In low temperature (T2=
200 DEG C) under, monocrystalline is sheet, and under high temperature (T2 >=210 DEG C), monocrystalline is needle-shaped or rodlike.
The platy-monocrystal of 200 μm of about 100 μ m of area, thickness about 60nm can be grown currently with the equipment.By into one
Step optimization crystal growth condition (source material sublimation temperature, growth temperature, flow rate of carrier gas etc.) can control crystallization process, to obtain not
With the monocrystalline of form and size, prepared for subsequent pn-junction.
The embodiment of the present invention is described with above attached drawing, but the invention is not limited to above-mentioned specific
Embodiment, the above mentioned embodiment is only schematical, rather than restrictive, those skilled in the art
Under the inspiration of the present invention, without breaking away from the scope protected by the purposes and claims of the present invention, it can also make very much
Form, all of these belong to the protection of the present invention.
Claims (10)
1. a kind of grower of multilayer organic single-crystal structure, which is characterized in that including being placed under inert gas atmosphere protection
Vapor phase growth unit, the vapor phase growth unit includes air inlet end socket and the air-flow that is detachably connected with the air inlet end socket
Casing, the interior setting source material sublimation zone of the air-flow casing and vitellarium.
2. the grower of multilayer organic single-crystal structure according to claim 1, which is characterized in that the air inlet end socket with
The region of the air-flow casing connection is source material lead-in area, opens the connection between the air inlet end socket and the air-flow casing
With more conversion materials.
3. the grower of multilayer organic single-crystal structure according to claim 1, which is characterized in that the air-flow casing with
First O-ring of the junction setting of the air inlet end socket, installs the first water-cooling system near first O-ring.
4. the grower of multilayer organic single-crystal structure according to claim 1, which is characterized in that the vapor phase growth list
Member further includes outlet end socket, and the one end of the air-flow casing far from the air inlet end socket is connect with the outlet end socket.
5. the grower of multilayer organic single-crystal structure according to claim 4, which is characterized in that the air-flow casing with
The outlet end socket is detachably connected, the second O-ring that the junction of the air-flow casing and the outlet end socket is arranged, described
Second water-cooling system is installed near the second O-ring.
6. the grower of multilayer organic single-crystal structure according to claim 1, which is characterized in that the source material distillation
Area and vitellarium interval setting, spacing distance are greater than 5mm, control temperature using independent resistance heating plate respectively.
7. the grower of multilayer organic single-crystal structure according to claim 6, which is characterized in that the source material distillation
Area and the vitellarium can be slided along track, and be fixed on specific site.
8. the grower of multilayer organic single-crystal structure according to claim 1, which is characterized in that further include being covered from top
The drainage part of the source material sublimation zone and the vitellarium is covered, the top of the drainage part slightly tilts, and keeps its opening big, outlet
Small, internal gas flow directly blows to substrate.
9. the grower of multilayer organic single-crystal structure according to claim 8, which is characterized in that the bottom of the drainage part
Cover plate is extended in portion, and the source material sublimation zone is arranged in the cover plate and interval at least part of the vitellarium is empty
In gap.
10. the grower of multilayer organic single-crystal structure according to claim 1, which is characterized in that the air inlet end socket
The first carrier gas of upper setting introduces pipe and the second carrier gas introduces pipe, and first carrier gas introduces the airflow direction and the air-flow set of pipe
Pipe radially extends that direction is parallel, and second carrier gas introduces the airflow direction of pipe and the air-flow casing radially extends direction
Vertically.
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