CN107331718B - Double-waveband detector and preparation method based on indium selenide and gallium nitride - Google Patents

Double-waveband detector and preparation method based on indium selenide and gallium nitride Download PDF

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CN107331718B
CN107331718B CN201710523317.7A CN201710523317A CN107331718B CN 107331718 B CN107331718 B CN 107331718B CN 201710523317 A CN201710523317 A CN 201710523317A CN 107331718 B CN107331718 B CN 107331718B
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layer
uv absorbing
insulating layer
absorbing layer
infrared absorption
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CN201710523317.7A
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CN107331718A (en
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宁静
程海青
郝跃
张进成
王东
董建国
李昂
陈家博
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西安电子科技大学
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    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
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    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

The invention discloses a kind of double-waveband detector and preparation method based on indium selenide and gallium nitride, mainly solves the problems, such as that the prior art cannot achieve while with position sensing.Comprising: substrate (1), UV absorbing layer (21), insulating layer (3), infrared absorption layer (22), two Ohmic electrodes (4,5).UV absorbing layer is located on substrate;Insulating layer is located at the Left half-plane of UV absorbing layer, forms a step surface in the right half plane of UV absorbing layer;Infrared absorption layer left-half is located on insulating layer, and right half part is located on the step surface of UV absorbing layer, and left-half area is less than insulating layer area, and right half part area is less than step surface area;First Ohmic electrode is located on infrared absorption layer, and area is greater than infrared absorption layer area, is less than insulating layer area;Second Ohmic electrode is located on UV absorbing layer step surface.The present invention can carry out the detection of ultraviolet and infrared double-waveband simultaneously, improve the performance and detection efficient of detection system.

Description

Double-waveband detector and preparation method based on indium selenide and gallium nitride

Technical field

The invention belongs to technical field of semiconductor device, particularly relate to a kind of ultraviolet-infrared dual band detector, can be used for Fire, meteorological detection.

Background technique

Ultraviolet infrared double-waveband Detection Techniques such as fire, in terms of have very important application value. It is detected using a ultraviolet infrared double-waveband, the identification probability of detection target can be greatly improved.

At present, for a ultraviolet infrared detection system due to the limitation of detector or optical system, used ultraviolet one is infrared Two waveband detection system mostly uses greatly ultraviolet, infrared two independent probe unit detections, and such as gallium nitride-base ultraviolet detector passes through Change the detection that aluminium component in aluminum gallium nitride realizes different ultraviolet bands;Cadmium-telluride-mercury infrared detector, by changing matching for mercury and cadmium Than obtaining optimum performance to realize each infrared spectroscopy section.When carrying out ultraviolet-infrared dual band detection, each detector is visited Different wave bands is surveyed, system receives the target information of different-waveband, by processing, shows.It is this individual using two Probe unit carries out the system structure complex of two waveband detection, and volume is big, and power consumption is big, cannot achieve while and visiting with position It surveys, and punctual when needing optical channel to match, also requires the fine adjustment of optical system, otherwise be easy to cause to same picture point, The location dislocation of different-waveband increases detection difficulty, reduces detection efficient.

If being able to achieve ultraviolet, the infrared ultraviolet infrared double-waveband of the same detector progress that shares to detect, can not only make With an optical system, system application performance is improved, and detection efficient can be greatly improved.Therefore research is single with same detection Member carries out ultraviolet infrared double-waveband detection simultaneously to be very important.

Summary of the invention

It is an object of the invention in view of the above shortcomings of the prior art, provide a kind of pair based on indium selenide and gallium nitride Band detector and preparation method, to realize that carrying out ultraviolet and infrared two waveband with same probe unit detects, and reduces power consumption, Improvement system application performance improves detection efficient.

The technical scheme of the present invention is realized as follows:

One, technical principle:

In recent years, application of the indium selenide in terms of infrared detector is got growing concern for.Selenizing indium compound material Material is a kind of semiconductor material with special crystal structure, and unique structure makes it possess excellent photoelectric properties.Indium selenide It is a kind of direct band-gap semicondictor, absorption spectrum ranges cover infrared band, and have particularly preferred response characteristic, make it It can be used as infrared absorption layer in the research of double-waveband detector.On the other hand, for ultraviolet detector, gallium nitride is with its spectrum Range is wide, has covered ultraviolet band, heat-resisting quantity and good corrosion resistance, has in terms of ultraviolet detector huge using valence Value.

In addition, graphene transparent electrode in gallium nitride base photoelectric device application be a new issue, 2010 with Preceding hardly seen any document report.On the one hand being is a kind of new material due to graphene itself;An and prior reason It is that graphene preparation just made substantial progress in 2009.Experiment shows that graphene has the light transmittance of superelevation, the expansion to electric current Scattered effect is clearly.Under the illumination of 372nm wavelength, the light transmittance of 2 layers of graphene is up to 95%, 4 layers also up to 89%, this A little advantages all make graphene transparent electrode have very high application potential in the research of photodetector.

Technical scheme is as follows according to above-mentioned principle by two:

1. a kind of double-waveband detector based on indium selenide and gallium nitride, including substrate, absorbed layer, insulating layer and two electricity Pole, it is characterised in that:

Absorbed layer, including UV absorbing layer and infrared absorption layer;

UV absorbing layer is located at the upper surface of substrate, and insulating layer is located on the Left half-plane of UV absorbing layer upper surface, with The right half plane of UV absorbing layer is set to form a step surface;

Infrared absorption layer is located on the step surface of insulating layer and UV absorbing layer;

First Ohmic electrode is located on the Left half-plane of infrared absorption layer, and the Left half-plane of infrared absorption layer is covered completely Lid, and the part beyond infrared absorption layer is in close contact with insulating layer;

Second Ohmic electrode is located at the part not covered by infrared absorption layer on UV absorbing layer step surface.

2. a kind of double-waveband detector production method based on indium selenide and gallium nitride, includes the following steps:

1) UV absorbing layer is grown using epitaxial growth equipment on substrate;

2) layer insulating is deposited on UV absorbing layer;

3) right half part of the insulating layer on UV absorbing layer is etched, with the right half part shape on the UV absorbing layer At step surface;

4) patch volt is obtained in the indium selenide film narrowband that pyrolysis release takes using micromechanics stripping means, the indium selenide is thin The width of film narrowband is less than the width of insulating layer, and length is greater than the length of insulating layer and is less than the length of UV absorbing layer;

5) using orientation transfer method will patch volt in pyrolysis release band indium selenide left-half covering on the insulating layer, Right half part is covered on the table top of UV absorbing layer, is in close contact indium selenide with insulating layer and UV absorbing layer respectively, then It is heated to 100 DEG C -120 DEG C to it and slowly tears pyrolysis release band off, obtains infrared absorption layer;

6) grapheme material is prepared using chemical gas-phase deposition method, the area of the graphene is greater than infrared on insulating layer The area of absorbed layer left-half is transferred on the insulating layer with indium selenide less than the area of insulating layer, and by the graphene, Carrying out annealing again is in close contact graphene and insulating layer and infrared absorption layer indium selenide, obtains the first Ohmic electrode;

7) the second Ohmic electrode is made on the step surface on UV absorbing layer, completes pair based on indium selenide and gallium nitride The production of band detector.

The present invention has the advantage that

1. selenizing phosphide material is transferred on gallium nitride by the present invention, the ultraviolet absorption characteristic and indium selenide of gallium nitride are utilized Infrared absorption characteristic forms the double absorption layer structure of indium selenide and gallium nitride, is able to achieve while carrying out ultraviolet and infrared double-waveband Detection, reduce power consumption, improve detection efficient.

2. the first Ohmic electrode improves electric current using the high transparency of graphene using grapheme material in the present invention Diffusion effect.

Detailed description of the invention

To further illustrate technology contents of the invention, with reference to embodiments and attached drawing detailed description is as follows:

Fig. 1 is the ultraviolet infrared double-waveband detector structural schematic diagram of indium selenide and gallium nitride material of the present invention;

Fig. 2 is the process of the device for the ultraviolet infrared double-waveband detector that the present invention prepares indium selenide and gallium nitride material Schematic diagram.

Specific embodiment

Referring to Fig.1, it include: substrate 1, absorbed layer 2, absolutely the present invention is based on the double-waveband detector of indium selenide and gallium nitride Edge layer 3 and two electrodes, i.e. the first Ohmic electrode 4 and the second Ohmic electrode 5.Wherein:

Substrate 1, using any one in silicon, sapphire, GaAs or carbofrax material;

Absorbed layer 2, including 22 double-layer structure of UV absorbing layer 21 and infrared absorption layer, the UV absorbing layer 21 are located at substrate 1 upper surface, using gallium nitride material;Utilize metal organic chemical vapor deposition MOCVD, molecular beam epitaxy MBE Or the equipment of other growing gallium nitride materials grows production;

Insulating layer 3, on the Left half-plane of 21 upper surface of UV absorbing layer, so that the right half plane of UV absorbing layer 21 A step surface is formed, which utilizes physical vapor deposition methods using aluminum oxide material with a thickness of 20-40nm Preparation is formed;

Infrared absorption layer 22, on the step surface of insulating layer 3 and UV absorbing layer 21, and its left-half is located at insulation On layer 3, right half part is located on the step surface of UV absorbing layer 21, and the area of left-half is less than the area of insulating layer 3, right The area of half part is less than the area of step surface;The infrared absorption layer 22 uses intrinsic selenizing phosphide material, is removed using micromechanics Method prepares to be formed;

First Ohmic electrode 4, on the Left half-plane of infrared absorption layer 22, and by the Left half-plane of infrared absorption layer 22 It is completely covered, and the part beyond infrared absorption layer 22 is in close contact with insulating layer 3;First Ohmic electrode 4 uses graphene Material prepares to be formed using chemical gas-phase deposition method;

Second Ohmic electrode 5, the part not covered by infrared absorption layer 22 on 21 step surface of UV absorbing layer;This Two Ohmic electrodes 5 use metal point structure or ring structure;Step structure is carved with the methods of dry etching, exposes UV absorption Layer 21;Then it is formed with the methods of photoetching, plated film preparation.

Referring to Fig. 2, the present invention makes the double-waveband detector method based on indium selenide and gallium nitride, provides following three kinds of realities Apply example:

Embodiment 1: the production of the double-waveband detector based on indium selenide and gallium nitride is completed using Sapphire Substrate

Step 1, UV absorbing layer 21 is grown.

The acetone suspension for 1a) preparing gallium oxide, is uniformly dripped in clean Sapphire Substrate with rubber head dropper, natural It dries;

1b) sapphire substrate sheet is put into quartz boat, quartz boat is put into constant-temperature tubular furnace;

After 1c) tube furnace is evacuated, being passed through argon gas makes one atmospheric pressure of air pressure in furnace, is heated to 1000 DEG C And it keeps;

It 1d) is passed through the ammonia 1h that flow is 60sccm at 1000 DEG C, close tube furnace and cools to room temperature, is depended on In the yellow film shape gallium nitride sample of Sapphire Substrate, the UV absorbing layer 21 being located in Sapphire Substrate is formed, such as Fig. 2 a.

Step 2, depositing insulating layer 3.

What is obtained in step 1 depends on three oxidations two that deposition thickness on the gallium nitride film of Sapphire Substrate is 20nm Aluminium thin layer forms insulating layer 3, such as Fig. 2 b.

Step 3, etching insulating layer 3.

The right half part of insulating layer 3 obtained in step 2 is performed etching, the shape on the right half part of UV absorbing layer 21 At step surface, such as Fig. 2 c.

Step 4, infrared absorption layer selenizing phosphide material is obtained.

Patch volt is obtained in the indium selenide film narrowband that pyrolysis release takes, the indium selenide film using micromechanics stripping means The width of narrowband is less than the width of insulating layer 3, and length is greater than the length of insulating layer 3 and is less than the length of UV absorbing layer 21;

Step 5, transfer production infrared absorption layer 22.

It is covered on the insulating layer 3 using left-half of the transfer method by patch volt in the indium selenide of pyrolysis release band is oriented, Right half part is covered on the table top of UV absorbing layer 21, connects indium selenide closely with insulating layer 3 and UV absorbing layer 21 respectively Touching, then be heated to 120 DEG C to it and slowly tear pyrolysis release band off, infrared absorption layer 22 is obtained, such as Fig. 2 d.

Step 6, the first Ohmic electrode 4 is prepared.

6a) clean foam copper is put into quartz boat, quartz boat is put into constant-temperature tubular furnace;

After 6b) tube furnace is evacuated, it is passed through 10sccm hydrogen, be heated to 1030 DEG C and is kept;

It 6c) is passed through the methane 2h that flow is 50sccm at 1030 DEG C, close tube furnace and cools to room temperature, is depended on In the graphene of foam copper substrate;

It is transferred to after 6d) corroding the graphene for depending on foam copper substrate with ammonium persulfate solution with infrared absorption layer On the insulating layer 3 of indium selenide, then carrying out annealing is in close contact graphene and insulating layer 3 and infrared absorption layer indium selenide, obtains First Ohmic electrode 4, such as Fig. 2 e.

Step 7, the second Ohmic electrode 5 is prepared.

The second ohm of electricity to form metal point structure is prepared with photoetching and film plating process on the step surface of UV absorbing layer The production of the double-waveband detector based on indium selenide and gallium nitride is completed, such as Fig. 2 f in pole 5.

Embodiment 2: the production of the double-waveband detector based on indium selenide and gallium nitride is completed using silicon substrate.

Step 1 grows UV absorbing layer 21.

1.1) the acetone suspension for preparing gallium oxide, is uniformly dripped on the silicon wafer that crystal orientation is 111 with rubber head dropper, natural It dries;

1.2) UV absorbing layer 21 being located on silicon substrate is completed according to operation identical with 1 step 1b of embodiment) -1d) Production, such as Fig. 2 a.

Step 2, depositing insulating layer 3.

Deposition obtains three oxidations with a thickness of 40nm on the gallium nitride film for depending on silicon substrate 1 obtained in step 1 Two aluminium thin layers, obtain insulating layer 3, such as Fig. 2 b.

Step 3, etching insulating layer 3.

The specific implementation of this step is identical as the step 3 of embodiment 1.

Step 4 obtains infrared absorption layer selenizing phosphide material.

The specific implementation of this step is identical as the step 4 of embodiment 1.

Step 5, transfer production infrared absorption layer 22.

It is covered on the insulating layer 3 using left-half of the transfer method by patch volt in the indium selenide of pyrolysis release band is oriented, Right half part is covered on the table top of UV absorbing layer 21, connects indium selenide closely with insulating layer 3 and UV absorbing layer 21 respectively Touching, then be heated to 100 DEG C to it and slowly tear pyrolysis release band off again, infrared absorption layer 22 is obtained, such as Fig. 2 d.

Step 6 prepares the first Ohmic electrode 4.

The specific implementation of this step is identical as the step 6 of embodiment 1.

Step 7 prepares the second Ohmic electrode 5.

It prepares to form the second Ohmic electrode 5 with photoetching and film plating process on the step surface on UV absorbing layer 21, this Two Ohmic electrodes 5 use metal point structure, the production of the double-waveband detector based on indium selenide and gallium nitride are completed, such as Fig. 2 f.

Embodiment 3: the production of the double-waveband detector based on indium selenide and gallium nitride is completed using silicon carbide substrates.

Step A grows UV absorbing layer 21.

A1 the acetone suspension for) preparing gallium oxide is uniformly dripped in clean silicon carbide substrates on piece, certainly with rubber head dropper So dry;

A2) UV absorbing layer being located in silicon carbide substrates is completed according to operation identical with 1 step 1b of embodiment) -1d) 21 production, such as Fig. 2 a.

Step B, depositing insulating layer 3.

Deposition obtains three oxygen with a thickness of 30nm on the gallium nitride film for depending on silicon carbide substrates obtained in step 1 Change two aluminium thin layers, obtains insulating layer 3;

Step C, etching insulating layer 3.

The specific implementation of this step is identical as the step 3 of embodiment 1.

Step D obtains infrared absorption layer selenizing phosphide material.

The specific implementation of this step is identical as the step 4 of embodiment 1.

Step E, transfer production infrared absorption layer 22.

It is covered on the insulating layer 3 using left-half of the transfer method by patch volt in the indium selenide of pyrolysis release band is oriented, Right half part is covered on the table top of UV absorbing layer 21, connects indium selenide closely with insulating layer 3 and UV absorbing layer 21 respectively Touching, then be heated to 110 DEG C to it and slowly tear pyrolysis release band off, infrared absorption layer 22 is obtained, such as Fig. 2 d;

Step F prepares the first Ohmic electrode 4.

The specific implementation of this step is identical as the step 6 of embodiment 1.

Step G prepares the second Ohmic electrode 5.

It prepares to form the second Ohmic electrode 5 with photoetching and film plating process on 21 step surface on UV absorbing layer, this Two Ohmic electrodes 5 use metal ring structure, complete the production of the double-waveband detector based on indium selenide and gallium nitride, such as scheme 2f。

Above description is only three specific examples of the invention, does not constitute any limitation of the invention, it is clear that for this For the professional in field, after having understood the content of present invention and design principle, all may without departing substantially from the principle of the present invention, In the case where structure, in form and the various modifications and variations in details but these amendments based on inventive concept are carried out With change still within scope of protection of the claims of the invention.

Claims (9)

1. a kind of double-waveband detector based on indium selenide and gallium nitride, including substrate (1), absorbed layer (2), insulating layer (3) and Two electrodes (4,5), it is characterised in that:
Absorbed layer (2), including UV absorbing layer (21) and infrared absorption layer (22);
UV absorbing layer (21) is located at the upper surface of substrate (1), and insulating layer (3) is located at left the half of UV absorbing layer (21) upper surface In plane, so that the right half plane of UV absorbing layer (21) forms a step surface;
Infrared absorption layer (22) is located on the step surface of partial insulative layer (3) and part UV absorbing layer (21);
First Ohmic electrode (4) is located on the Left half-plane of infrared absorption layer (22), and by the Zuo Banping of infrared absorption layer (22) Face is completely covered, and the part beyond infrared absorption layer (22) is in close contact with insulating layer (3);
Second Ohmic electrode (5) is located at the part not covered by infrared absorption layer (22) on UV absorbing layer (21) step surface.
2. detector according to claim 1, wherein substrate (1) is using in silicon, sapphire, GaAs and carbofrax material Any one.
3. detector according to claim 1, wherein insulating layer (3) uses aluminum oxide material, and with a thickness of 20- 40nm。
4. detector according to claim 1, wherein UV absorbing layer (21) uses gallium nitride material.
5. detector according to claim 1, wherein infrared absorption layer (22) uses intrinsic selenizing phosphide material, and infrared suction The area for receiving layer (22) is less than the area of insulating layer (3) and UV absorbing layer step surface.
6. detector according to claim 1, wherein the first Ohmic electrode (4) uses grapheme material, and first ohm The area of electrode (4) is less than the area of insulating layer.
7. detector according to claim 1, wherein the second Ohmic electrode (5) uses metal point structure or ring structure.
8. a kind of double-waveband detector production method based on indium selenide and gallium nitride, includes the following steps:
1) UV absorbing layer is grown using epitaxial growth equipment on substrate;
2) layer insulating is deposited on UV absorbing layer;
3) right half part of the insulating layer on UV absorbing layer is etched, platform is formed with the right half part on the UV absorbing layer Terrace;
4) patch volt is obtained in the indium selenide film narrowband that pyrolysis release takes using micromechanics stripping means, the indium selenide film is narrow The width of band is less than the width of insulating layer, and length is greater than the length of insulating layer and is less than the length of UV absorbing layer;
5) left-half using orientation transfer method by patch volt in the indium selenide of pyrolysis release band is covered on partial insulative layer, Right half part is covered on the table top of part UV absorbing layer, connects indium selenide closely with insulating layer and UV absorbing layer respectively Touching, then be heated to 100 DEG C -120 DEG C to it and slowly tear pyrolysis release band off, obtain infrared absorption layer;
6) grapheme material is prepared using chemical gas-phase deposition method, the area of the graphene is greater than the infrared absorption on insulating layer The area of layer left-half, is transferred on the insulating layer with indium selenide less than the area of insulating layer, and by the graphene, then into Row annealing is in close contact graphene and insulating layer and infrared absorption layer indium selenide, obtains the first Ohmic electrode;
7) the second Ohmic electrode is made on the step surface on UV absorbing layer, completes the two waveband based on indium selenide and gallium nitride The production of detector.
According to the method for claim 8,9. wherein preparing grapheme material using chemical gas-phase deposition method in step 6) Process conditions it is as follows:
Substrate uses foam copper,
Methane and hydrogen flowing quantity ratio are 50sccm:10sccm,
Growth temperature is 1030 DEG C,
Growth time is 2.0h.
CN201710523317.7A 2017-06-30 2017-06-30 Double-waveband detector and preparation method based on indium selenide and gallium nitride CN107331718B (en)

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CN104701393A (en) * 2015-03-13 2015-06-10 上海集成电路研发中心有限公司 Dual-waveband photoelectric detector and preparation method thereof
CN104956496A (en) * 2013-01-11 2015-09-30 庆熙大学校产学协力团 Photodetector
CN106898674A (en) * 2017-03-25 2017-06-27 张清 A kind of double-waveband detector

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CN104701393A (en) * 2015-03-13 2015-06-10 上海集成电路研发中心有限公司 Dual-waveband photoelectric detector and preparation method thereof
CN106898674A (en) * 2017-03-25 2017-06-27 张清 A kind of double-waveband detector

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