CN109422290B - 用于涂层的化合物、含铝钽酸铪、及含铝和铒的钽酸铪 - Google Patents
用于涂层的化合物、含铝钽酸铪、及含铝和铒的钽酸铪 Download PDFInfo
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- CN109422290B CN109422290B CN201810986621.XA CN201810986621A CN109422290B CN 109422290 B CN109422290 B CN 109422290B CN 201810986621 A CN201810986621 A CN 201810986621A CN 109422290 B CN109422290 B CN 109422290B
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 119
- 229910052735 hafnium Inorganic materials 0.000 title claims abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 33
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 title claims abstract description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000000576 coating method Methods 0.000 title abstract description 34
- 239000011248 coating agent Substances 0.000 title abstract description 30
- -1 aluminum-and erbium Chemical compound 0.000 title description 15
- 239000000203 mixture Substances 0.000 claims abstract description 103
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 44
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 32
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 30
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 29
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 27
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 26
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 26
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 26
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 26
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 26
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 26
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 26
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 26
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 26
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 24
- 229910052738 indium Inorganic materials 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 15
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 15
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 15
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 15
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 15
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 15
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052765 Lutetium Inorganic materials 0.000 claims description 11
- 229910052746 lanthanum Inorganic materials 0.000 claims description 11
- VYBYZVVRYQDCGQ-UHFFFAOYSA-N alumane;hafnium Chemical compound [AlH3].[Hf] VYBYZVVRYQDCGQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 19
- 239000000463 material Substances 0.000 description 38
- 239000011153 ceramic matrix composite Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 20
- 239000007789 gas Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000000428 dust Substances 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 10
- 230000007613 environmental effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- 239000000567 combustion gas Substances 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 229910000449 hafnium oxide Inorganic materials 0.000 description 6
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 6
- 239000012720 thermal barrier coating Substances 0.000 description 6
- 229910000323 aluminium silicate Inorganic materials 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 150000002910 rare earth metals Chemical class 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000601 superalloy Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229920006184 cellulose methylcellulose Polymers 0.000 description 2
- 238000012710 chemistry, manufacturing and control Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000012783 reinforcing fiber Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- WHCTUJRUGCZSKS-UHFFFAOYSA-N [Sr][Ba][Ba] Chemical compound [Sr][Ba][Ba] WHCTUJRUGCZSKS-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052586 apatite Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052916 barium silicate Inorganic materials 0.000 description 1
- 239000001996 bearing alloy Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 239000010433 feldspar Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- VSIIXMUUUJUKCM-UHFFFAOYSA-D pentacalcium;fluoride;triphosphate Chemical compound [F-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O VSIIXMUUUJUKCM-UHFFFAOYSA-D 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000001141 propulsive effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052917 strontium silicate Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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Abstract
本公开内容提供了一种化合物,其可特别用于在涂层体系中形成层。在一个实施例中,该化合物可具有下式:AxBbLn1‑x‑bHf1‑t‑dTitDdMO6,其中:A是Al、Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物;x是约0.01至约0.99;b是0至约0.5,其中1‑x‑b是0至约0.99,使得Ln存在于化合物中;Ln是不同于A的稀土元素或其混合物;t是0至约0.99;D是Zr、Ce、Ge、Si或其混合物;d是0至约0.5;t和d之和小于1,使得Hf存在于化合物中;并且M是Ta、Nb或其混合物。另外还提供了一种含铝钽酸铪和一种含铝和铒的钽酸铪。
Description
技术领域
本发明的实施例大体上涉及用于陶瓷部件的环境屏障涂层及其制成方法。
背景技术
业界持续努力提高燃气涡轮发动机的操作温度以便改进其效率。然而,随着操作温度增加,发动机的部件的耐高温性必须相应地增加。已通过铁、镍和钴类超合金配制物达成高温能力的显著进步。然而,对于由超合金构成的多数热气体路径部件,热屏障涂层(thermal barrier coating,TBC)可用于隔绝所述部件,并且可维持载荷承载合金与涂层表面之间明显的温度差,因此限制结构部件的热暴露。
虽然已发现超合金广泛用于在整个燃气涡轮发动机中并且尤其是在较高温度区段中使用的部件,但已提出替代的重量较轻的基材材料,例如陶瓷基质复合物(ceramicmatrix composite,CMC)材料。CMC和单片陶瓷部件上可涂布环境屏障涂层(environmentalbarrier coating,EBC)以保护其免受高温发动机区段的苛刻环境。EBC可提供致密的气密密封件以免受热燃烧环境中的腐蚀性气体。
碳化硅和氮化硅陶瓷经历干燥高温环境中的氧化。此氧化在材料表面上产生钝态氧化硅垢。在含有水蒸气的潮湿、高温环境中,例如涡轮发动机中,氧化和凹陷两者均由于形成钝化氧化硅垢以及氧化硅随后转换为气态氢氧化硅而发生,这导致材料的尺寸损失。对于涡轮发动机中基于硅的基材的部件应用,这种材料损失可打开间隙且可导致效率损失,并且最终可导致部件的穿孔。
这样,将环境屏障涂层(EBC)施加到陶瓷的表面上,以帮助保护下面的部件。用于CMC上的环境屏障涂层的目前材料包括钡长石相钡硅酸锶钡(BSAS)和稀土硅酸盐。与CMC相比,所有这些材料在蒸汽中相对稳定,并且如果作为致密涂层存在,可防止蒸汽渗透到CMC。
然而,这些材料对熔融环境污染物组合物,特别是含有钙、镁、铝、硅的氧化物及其混合物的那些组合物,具有不同的耐受性。例如,由燃气涡轮发动机摄入的污物、灰烬和粉尘通常由这样的化合物组成,所述化合物经常组合以形成包含混合的钙-镁-铝-硅-氧化物系统(Ca-Mg-Al-Si-O)的污染物组合物,下文称为“CMAS”。在高涡轮机操作温度下,这些环境污染物可粘附到热屏障涂层表面,并且因此引起对EBC的损害。例如,CMAS可形成在涡轮机的操作温度下为液体或熔融的组合物。熔融的CMAS组合物可溶解屏障涂层,或者可通过渗透涂层中的孔、通道、裂缝或其它空腔来填充其多孔结构。冷却后,渗透的CMAS组合物固化并降低涂层应变耐受性,因此引发且传播可引起涂层材料分层和剥落的裂缝。
特别地,熔融粉尘与BSAS强烈反应,以形成低温共熔混合物和在蒸汽中不稳定的相。熔融粉尘针稀土硅酸盐的腐蚀性较小。一些稀土硅酸盐(例如由钆、铒和钇组成的那些)与熔融粉尘反应,以形成高度难熔的“磷灰石”相。其它稀土硅酸盐允许CMAS渗透,但不经受熔点抑制。然而,所有稀土硅酸盐都通过它们与熔融粉尘的相互作用而使得机械性能被削弱,使得随后的侵蚀和冲击事件可更容易使涂层脱落。
因此,需要涂层组合物,其与当前工艺水平的EBC材料相比较不易受熔融粉尘攻击影响,并且也较不易受后续气体侵蚀、颗粒侵蚀和颗粒冲击影响。
发明内容
方面和优点将部分地在下面的描述中阐述,或者可从该描述显而易见,或者可通过本发明的实施来了解。
一般提供了化合物,其可特别用于在涂层体系中形成层。在一个实施例中,该化合物可具有下式:
AxBbLn1-x-bHf1-t-dTitDdMO6
其中:A是Al、Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物;x是约0.01至约0.99;b是0至约0.5,其中1-x-b是0至约0.99,使得Ln存在于化合物中;Ln是Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或其混合物,并且其中就组成而言Ln不同于A;t是0至约0.99;D是Zr、Ce、Ge、Si或其混合物;d是0至约0.5;t和d之和小于1,使得Hf存在于化合物中;并且M是Ta、Nb或其混合物。
在一个特定实施例中,该化合物可以是具有下式的含铝钽酸铪:
Al1-x-yA’xA”yHfTaO6
其中:其中A’是Er、Sm或其混合物;x是约0.3至约0.45;A”是In、Ga或其混合物;y是约0.15至约0.35;并且(x+y)是约0.5至约0.7。
在一个特定实施例中,该化合物可以是具有下式的含铝和铒的钽酸铪:
Al1-x-yErxGayHfTaO6
其中:x是约0.4至0.6;y是0至约0.4;并且(x+y)是约0.5至约0.85。
技术方案1.一种化合物,其具有下式:
AxBbLn1-x-bHf1-t-dTitDdMO6
其中:
A是Al、Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物;
x是约0.01至约0.99;
b是0至约0.5,其中1-x-b是0至约0.99,使得Ln存在于所述化合物中;
Ln是Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或其混合物,并且其中就组成而言Ln不同于A;
t是0至约0.99;
D是Zr、Ce、Ge、Si或其混合物;
d是0至约0.5;
t和d之和小于1,使得Hf存在于所述化合物中;和
M是Ta、Nb或其混合物。
技术方案2.根据技术方案1所述的化合物,其中b是0,并且其中x是约0.05至约0.9。
技术方案3.根据技术方案1所述的化合物,其中b是大于0至约0.5,并且其中x是约0.05至约0.9,其中x和b之和小于1。
技术方案4.根据技术方案1所述的化合物,其中b是0,并且其中t是0。
技术方案5.根据技术方案1所述的化合物,其中b是0,并且其中d是0。
技术方案6.根据技术方案1所述的化合物,其中:b是0;t是0;并且d是0。
技术方案7.根据技术方案6所述的化合物,其中:M是Ta。
技术方案8.根据技术方案1所述的化合物,其中A包括Al,使得所述化合物具有下式:
AlxA’aBbLn1-x-a-bHf1-t-dTitDdMO6
其中:
x是约0.01至约0.99,使得Al存在于所述化合物中;
A’是Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物;
a是0至约0.99;
b是0至约0.5,其中1-x-a-b是0至约0.99,使得Ln存在于所述化合物中;
Ln是Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或其混合物,并且其中就组成而言Ln不同于A;
t是0至约0.99;
D是Zr、Ce、Ge、Si或其混合物;
d是0至约0.5;
t和d之和小于1,使得Hf存在于所述化合物中;和
M是Ta、Nb或其混合物。
技术方案9.根据技术方案1所述的化合物,其中所述化合物具有下式:
AlxGayBbLn1-x-y-bHf1-t-dTitDdMO6
其中:
x是约0.01至约0.99,使得Al存在于所述化合物中;
y是约0.01至约0.99,使得Ga存在于所述化合物中;
b是0至约0.5,其中1-x-a-b是0至约0.99,使得Ln存在于所述化合物中;
Ln是Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或其混合物,并且其中就组成而言Ln不同于A;
t是0至约0.99;
D是Zr、Ce、Ge、Si或其混合物;
d是0至约0.5;
t和d之和小于1,使得Hf存在于所述化合物中;和
M是Ta、Nb或其混合物。
技术方案10.根据技术方案1所述的涂层体系,其中Ln是Er、Y、Ho或其混合物。
技术方案11.根据技术方案1所述的化合物,其中t是0,并且其中d是大于0至约0.25。
技术方案12.一种含铝钽酸铪,其具有下式:
Al1-x-yA’xA”yHfTaO6
其中:
A’是Er、Sm或其混合物;
x是约0.3至约0.45;
A”是In、Ga或其混合物;
y是约0.15至约0.35;和
(x+y)是约0.5至约0.7。
技术方案13.根据技术方案12所述的含铝钽酸铪,其中A’是Er或Sm,并且其中A”是In或Ga。
技术方案14.根据技术方案12所述的含铝钽酸铪,其具有下式:Er0.33Al0.37In0.3HfTaO6。
技术方案15.根据技术方案12所述的含铝钽酸铪,其具有下式:Sm0.43Al0.4Ga0.17HfTaO6。
技术方案16.根据技术方案12所述的含铝钽酸铪,其具有下式:Sm0.29Al0.42In0.29HfTaO6。
技术方案17.根据技术方案12所述的含铝钽酸铪,其具有下式:Sm0.36Al0.47In0.17HfTaO6。
技术方案18.一种含铝和铒的钽酸铪,其具有下式:
Al1-x-yErxGayHfTaO6
其中:
x是约0.4至约0.6;
y是0至约0.4;和
(x+y)是约0.5至约0.85。
技术方案19.根据技术方案18所述的含铝和铒的钽酸铪,其具有下式:Er0.48Al0.2Ga0.32HfTaO6。
技术方案20.根据技术方案18所述的含铝和铒的钽酸铪,其具有下式:Er0.557Al0.443HfTaO6。
结合下面的描述和附随的权利要求,这些及其它特征、方面和优点将变得更好理解。并入本说明书中并构成其一部分的附图示意了本发明的实施例,并与该描述一起用来说明本发明的某些原理。
附图说明
针对所属领域的技术人员,本发明的完整且启发性公开内容,包括其最佳模式,在参考附图的说明书中被阐述,在所述附图中:
图1显示了具有基材的示例性经涂覆的部件,在所述基材上具有涂层体系;
图2显示了具有基材的示例性经涂覆的部件,在所述基材上具有涂层体系;和
图3是燃气涡轮发动机的示意性横截面视图,所述燃气涡轮发动机可在其中包括图1的经涂覆的部件。
在本说明书和图中参考标号的重复使用意图表示本发明的相同或相似特征或元件。
具体实施方式
现将详细参考本发明的实施例,在图中说明本发明的实施例的一个或多个实例。每个实例是为了解释本发明而提供,而非限制本发明。实际上,所属领域的技术人员将清楚,在不脱离本发明的范围或精神的情况下可在本发明中进行各种修改和变化。举例来说,说明或描述为一个实施例的一部分的特征可与另一实施例一起使用以产生再一实施例。因此,希望本发明涵盖此类修改和变化,所述修改和变化处于所附权利要求书及其等效物的范围内。
在本发明中,当层描述为在另一层或基材“上”或“上面”时,应理解,除非明确说明相反情况,否则所述层可彼此直接接触或在所述层之间具有另一层或特征。因此,这些术语仅描述所述层彼此的相对位置,而不必意味着“在顶上”,这是因为上方或下方的相对位置取决于装置对观察者的取向。
在本发明中使用例如通常在元素周期表上发现的常见化学名称缩写来论述化学元素。举例来说,氢由其常见化学名称缩写H表示;氦由其常见化学名称缩写He表示;等等。如本说明书中所使用,“Ln”是指稀土元素或稀土元素的混合物。更具体地,“Ln”指稀土元素钪(Sc)、钇(Y)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)、镥(Lu)、或其混合物。
一般提供了用作环境屏障涂层(EBC)的部分的组合物,连同用这种组合物涂覆部件的方法。另外,一般提供了用作在基材的表面上涂覆的EBC的涂层体系,连同形成方法和所得到的经涂覆的部件。
一般地,本文所述的组合物比目前的EBC组合物更不易受熔融粉尘、侵蚀、冲击和/或混合模式降解机制的影响。因此,与目前工艺水平的EBC相比,本文提供的组合物可获得更稳健的EBC,其保留在基材材料上以保护其免受由于涡轮发动机环境中的水蒸气导致的衰退。总之,与BSAS和稀土硅酸盐EBC材料相比,这些材料显示出针对熔融粉尘的更好抗性,并且可具有比BSAS和稀土硅酸盐材料更高的硬度,特别是在暴露于熔融粉尘(例如CMAS)之后。因此,该化合物增加了对由这种材料(例如EBC)形成的涂层的颗粒侵蚀和冲击的抗性。
现在参考附图,图1显示了具有基材102的示例性经涂覆的部件100,在所述基材102上具有涂层体系106。一般地,涂层体系106包括在基材的表面103上的任选的粘结涂层104和在任选的粘结涂层104上的EBC 108。在所示的实施例中,粘结涂层104直接在表面103上,其间没有任何层。然而,在其它实施例中,一个或多个层可位于粘结涂层104(当存在时)和表面103之间。在其它实施例中,EBC108可直接在基材102的表面103上形成。
EBC 108可包括由选自典型EBC或热屏障涂层(“TBC”)层化学物质的材料形成的一个或多个层110的任何组合,所述材料包括但不限于稀土硅酸盐(例如,单硅酸盐和二硅酸盐)、铝硅酸盐(如莫来石、硅酸锶钡(BSAS)、稀土铝硅酸盐等)、氧化铪、氧化锆、稳定氧化铪、稳定氧化锆、稀土铪酸盐、稀土锆酸盐、稀土氧化镓等。
根据一个特定实施例,EBC 108的至少一个层110包括具有以下表达式的化合物:
A1-bBbZ1-dDdMO6 (式1)
其中A是Al、Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物;b是0至约0.5(例如0至约0.2,例如大于0至约0.5、或约0.001至约0.2);Z是Hf、Ti或其混合物;D是Zr、Ce、Ge、Si或其混合物;d是0至约0.5(例如0至约0.2,例如约0.001至约0.5、或约0.001至约0.2);并且M是Ta、Nb或其混合物。式1的化合物可显示出在高温蒸汽中的稳定性方面与现有BSAS和稀土硅酸盐材料相似或更好的性质。另外,与BSAS和稀土硅酸盐EBC材料相比,这些材料可显示出更好的针对熔融粉尘的抗性。此外,这些材料可具有比BSAS和稀土硅酸盐材料更高的硬度,特别是在暴露于熔融粉尘之后。这导致涂层对颗粒侵蚀和冲击更有抗性。
一般地,具有式1的化合物可在层110中具有多个相,例如正交晶相(例如,具有Pbcn或Pnma空间群)、四方晶相(例如,具有P42/mnm)、或者单斜晶相(例如,具有P2/c)。这样,这些材料可具有与由含有氧化铪或氧化锆的材料形成的TBC层完全不同(在相位方面)的结构,由含有氧化铪或氧化锆的材料形成的TBC层通常具有单斜晶氧化铪和单斜晶氧化锆的相P21/c、或四方晶氧化铪和氧化锆的相P42/nmc、或氧化铪和氧化锆的立方结构。
应理解,该化合物在其组成中具有不同的“位点”,包括由式1的A和/或B形成的“A位点”,由式1的Z和/或D形成的“Z位点”,“M位点”和氧。
在某些实施例中,化合物可包括“A位点”中的单一元素,使得b是0,并且A是选自Al、Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn和Bi的元素。在一个示例性实施例中,当b是0且A是Al时,化合物为:AlZ1-dDdMO6(例如,当d是0时,AlZMO6,例如AlHfTaO6)。在另一个示例性实施例中,当b是0且A是Y时,该化合物具有下式:YZ1-dDdMO6(例如,当d是0时,YZMO6,例如YHfTaO6)。在另外一个示例性实施例中,当b是0且A是Er时,该化合物具有以下表达式:ErZ1-dDdMO6(例如,当d是0时,ErZMO6,例如ErHfTaO6)。
在一个特定实施例中,具有式1的化合物的“A位点”包括与另一种A元素(例如,Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物组合的铝(Al)。不希望受任何特定理论的束缚,据信化合物中Al的存在增加了涂层的硬度。在某些实施例中,Al与另一种元素组合存在于“A位点”处,然后该化合物可描述为具有以下表达式:
AlxA1-x-bBbZ1-dDdMO6 (式2)
其中x是约0.01至约0.99;A是Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物;b是0至约0.5(例如0至约0.2,例如约0.001至约0.5、或约0.001至约0.2);Z是Hf、Ti或其混合物;D是Zr、Ce、Ge、Si或其混合物;d是0至约0.5(例如0至约0.2,例如约0.001至约0.5、或约0.001至约0.2);并且M是Ta、Nb或其混合物。在某些实施例中,x是约0.05至约0.9,例如约0.1至约0.75。在一个特定实施例中,在式1的化合物的A位点处的元素混合物中多达一半可为Al(例如,在式2的化合物中,x是约0.1至约0.5)。
除Al之外,在一个特定实施例中,具有式1的化合物的“A位点”包括Al和镓(Ga)的组合,可有或没有另一种A元素(例如,In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物)的存在。不希望受任何特定理论的束缚,据信化合物中Ga的存在降低了在A位点处的平均离子半径,这调节了层110的热膨胀系数(CTE)。因此,化合物中Ga的量可用于控制层110的CTE,以将其调节为接近在涂层体系106内的相邻层的CTE和/或基材102的CTE。
当化合物在“A位点”的一部分中包括Al和Ga时,则该化合物可描述为具有以下表达式:
AlxGayA1-x-y-bBbZ1-dDdMO6 (式3)
其中x是约0.01至约0.99,如上文关于式2所述;y是约0.01至约0.9;x+y是1或更小;A是In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物;b是0至约0.5(例如0至约0.2,例如约0.001至约0.5、或约0.001至约0.2);Z是Hf、Ti或其混合物;D是Zr、Ce、Ge、Si或其混合物;d是0至约0.5(例如0至约0.2,例如约0.001至约0.5、或约0.001至约0.2);并且M是Ta、Nb或其混合物。当x+y小于1(即,x+y<1)时,另一种元素可存在于式3的化合物的A位点处。在一个特定实施例中,在式1的化合物的A位点处的元素混合物中多达一半可为Al(例如,在式3的化合物中,x是约0.1至约0.5),并且在式1的化合物的A位点处的元素混合物中多达一半可为Ga(例如,在式3的化合物中,y是约0.1至约0.5)。
在特定实施例中,铒(Er)、钇(Y)和/或钬(Ho)可包括在具有式1、式2和/或式3的化合物的A位点内(即,在式1、2或3中的任一个中的A包括Er、Y、Ho或其混合物)。不希望受任何特定理论的束缚,据信Er、Y和/或Ho可对由这种化合物形成的层110提供CMAS抗性。
对于b大于0的式1-3,硼(B)掺杂了具有式1的化合物中的“A位点”,以改变由该化合物形成的层的CTE和/或烧结温度。另外,B可迁移到其它层(例如,粘结涂层和/或热生长氧化物层),以帮助那些层与CMAS相互作用和/或控制那些层的结晶。然而,在其它实施例中,b是0,使得B不存在于化合物中。
在一个特定实施例中,具有式1、2或3的化合物中任一种的“Z位点”可用于帮助控制化合物的CTE。一般地,化合物的CTE与在Z位点处的离子半径成正比。例如,随着Z位点元素的离子半径减小,化合物的CTE降低。在特定实施例中,Z位点可包括Hf、Ti或其混合物,如式4中所示:
A1-bBbHfhTitD1-h-tMO6 (式4)
其中h是0至1,t是0至1,并且h+t大于0至1;A是Al、Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物;b是0至约0.5(例如0至约0.2,例如约0.001至约0.5、或约0.001至约0.2);D是Zr、Ce、Ge、Si或其混合物;并且M是Ta、Nb或其混合物。在式4的一个特定实施例中,A位点可包括Al(例如,如上文关于式2所讨论的)、Ga(例如,如上文关于式3所讨论的)、和/或其它材料、和/或B(例如,如上文关于式1、2或3所讨论的)。在某些实施例中,h+t可大于0但小于1,使得另一种元素(D)存在于Z位点处。
在一个实施例中,Hf存在于化合物中,使得h大于0至1(例如,约0.05至约1)。在一个特定实施例中,当Hf和Ti两者均存在于化合物中时(即,h和t两者均大于0),Hf的摩尔量可以大于Ti的量,使得h大于t。在一个实施例中,就摩尔比而言,Hf可占在Z位点处的元素中的大部分(即h是0.5至1)。例如,在特定实施例中,h可为1,使得t是0并且1-h-t是0(即,Hf是在Z位点处的唯一元素)。不希望受任何特定理论的束缚,据信Z位点中的Hf可增加由这种化合物形成的涂层的硬度和蒸汽抗性。
在特定实施例中,当Hf存在于“Z位点”中时(即,Z包括单独的或与Ti和/或D组合的Hf),在“A位点”中可包括元素的组合。例如,这种化合物可具有以下表达式:
AxBbLn1-x-bHf1-t-dTitDdMO6 (式5)
其中:A是Al、Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物;x是约0.01至约0.99;b是0至约0.5,其中1-x-b是0至约0.99,使得Ln存在于化合物中;Ln是Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或其混合物,并且就组成而言Ln不同于A;t是0至约0.99;D是Zr、Ce、Ge、Si或其混合物;d是0至约0.5;t和d之和小于1,使得Hf存在于化合物中;并且M是Ta、Nb或其混合物。
当A包括与另一种元素组合的Al时,式5可如下修改:
AlxA’aBbLn1-x-a-bHf1-t-dTitDdMO6 (式6)
其中:x是约0.01至约0.99,使得Al存在于化合物中;A'是Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物;a是约0至约0.99;b是0至约0.5,其中1-x-a-b是0至约0.99,使得Ln存在于化合物中;Ln是Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或其混合物,并且就组成而言Ln不同于A;t是0至约0.99;D是Zr、Ce、Ge、Si或其混合物;d是0至约0.5;t和d之和小于1,使得Hf存在于化合物中;并且M是Ta、Nb或其混合物。
例如,Al和Ga两者均可与另一种元素一起存在于A位点中(其中Hf包括在Z位点中),例如在下式中:
AlxGayBbLn1-x-y-bHf1-t-dTitDdMO6 (式7)
其中:x是约0.01至约0.99,使得Al存在于化合物中;y是约0.01至约0.99,使得Ga存在于化合物中;b是0至约0.5,其中1-x-a-b是0至约0.99,使得Ln存在于化合物中;Ln是Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或其混合物,并且其中就组成而言Ln不同于A;t是0至约0.99;D是Zr、Ce、Ge、Si或其混合物;d是0至约0.5;t和d之和小于1,使得Hf存在于化合物中;并且M是Ta、Nb或其混合物。
式1-7中任一的化合物的“M位点”的材料可影响所得到的化合物的相容差和CTE。在一个特定实施例中,M位点可为Nb而不存在任何另外的元素,当用作EBC涂层内的层时,其可提供更好的相容差和CTE匹配。
如所述,式1-7中任一的化合物可包括在涂层体系106的EBC 108的层中,以便提供与CMAS具有最低限度反应并且在与CMAS反应后具有高硬度(例如,用于侵蚀抗性)的材料。因此,式1-7中任一的化合物的材料可与EBC层的其它材料一起包括在EBC层内,或者可用于在EBC 108内形成分开的层。在一个实施例中,EBC 108的层由式1-7中任一的化合物形成,并且可具有约1μm至约1mm(例如,1μm至约100μm)的厚度。
在一个实施例中,式1-7中任一的化合物可包括在涂层体系106的EBC 108的最外层中,使得该化合物可帮助保护下面的EBC层和基材102。基材102可由陶瓷基质复合物(“CMC”)材料形成,例如硅基非氧化物陶瓷基质复合物。如本文使用的,“CMC”指含硅、或氧化物-氧化物、基质和增强材料。如本文使用的,“单片陶瓷”指没有纤维增强的材料(例如,仅具有基质材料)。在本说明书中,CMC和单片陶瓷统称为“陶瓷”。
对于本文使用可接受的CMC的一些例子可包括但不限于具有基质的材料和包含非氧化硅基材料的增强纤维,所述非氧化硅基材料例如碳化硅、氮化硅、碳氧化硅、氮氧化硅及其混合物。实例包括但不限于:具有碳化硅基质和碳化硅纤维的CMC;具有氮化硅基质和碳化硅纤维的CMC;以及具有碳化硅/氮化硅基质混合物和碳化硅纤维的CMC。此外,CMC可具有由氧化物陶瓷组成的基质和增强纤维。具体地,氧化物-氧化物CMC可由包括例如氧化铝(Al2O3)、二氧化硅(SiO2)、铝硅酸盐和其混合物的氧化物基材料的基质和增强纤维组成。铝硅酸盐可包括结晶材料例如莫来石(3Al2O3 2SiO2)以及玻璃状铝硅酸盐。
特别合适用作相对厚或薄的EBC层的化合物可具有与下面的CMC基材特别接近的热膨胀系数(CTE)。例如,含铝钽酸铪的CTE相对接近于CMC基质的CTE,因而可能是特别合适的化合物。例如,含铝钽酸铪可具有以下表达式:
Al1-x-yA’xA”yHfTaO6 (式8)
其中A’是Er、Sm或其混合物;x是约0.3至约0.45;A”是In、Ga或其混合物;y是约0.15至约0.35;并且(x+y)是约0.5至约0.7,使得Al以约0.3至约0.5存在。在特定实施例中,A’是Er或Sm,和/或A”是In或Ga。式8的化合物也可参考式1,其中(参考式1)A包括与两种其它元素(式8的A’和A”)组合的Al;b是0,Z是Hf,d是0,并且M是Ta。
特别合适用作相对薄的EBC层(例如,具有约100μm或更小的厚度)的化合物的热膨胀系数(CTE)可接近于其下面的CMC基材的CTE但不在CTE匹配关系内。例如,含铒钽酸铪可能是特别合适用于这种EBC层的化合物,并且可具有以下表达式:
Al1-x-yErxGayHfTaO6 (式9)
其中x是约0.4至约0.6;y是0至约0.4;并且(x+y)是约0.5至约0.85,使得Al以约0.15至约0.5存在。式9的化合物也可参考式1,其中(参考式1)A包括Er、Al和Ga的组合;b是0,Z是Hf,d是0,并且M是Ta。
如所示,粘结涂层104任选地位于在基材102和EBC 108之间的基材102的表面103上。当存在时,粘结涂层104包括硅或硅基材料(例如,硅化物等)。一般地,粘结涂层104相对较薄,例如具有约25微米(μm)至约275μm,例如约25μm至约150μm(例如,约25μm至约100μm)的厚度。
图2显示了热生长氧化物(“TGO”)层105,其可在部件100暴露于氧的期间(例如,在制造和/或使用期间),在硅基粘结涂层104的表面上形成,例如氧化硅层(有时称为“氧化硅标度”或“二氧化硅标度”)。
图1所示的经涂覆的部件100特别适合用作在高温环境中的部件,例如在燃气涡轮发动机中的部件,例如燃烧器部件、涡轮叶片、护罩、喷嘴、隔热罩和轮叶。特别地,涡轮机部件可为位于燃气涡轮机的热气体流动路径内的CMC部件,这样,涂层体系106成为其下面的基材102的环境屏障,以在燃气涡轮机内的部件100暴露于热气体流动路径时保护该部件100。
图3是根据本公开内容的示例性实施例的燃气涡轮发动机的示意性横截面视图。更确切地说,对于图3的实施例,燃气涡轮发动机为高旁路涡扇喷气发动机(high-bypassturbofan jet engine)10,其在本文中被称为“涡扇发动机10”。如图3所示,涡扇发动机10限定了轴向A(平行于提供用于参考的纵向中心线12延伸)和径向R。一般而言,涡扇10包括风扇区段14和设置在风扇区段14下游的核心涡轮发动机16。尽管下文参考涡扇发动机10进行描述,但本公开内容适用于一般而言的涡轮机械,包括涡轮喷气发动机、涡轮螺旋桨发动机和涡轮轴燃气涡轮发动机,包括工业和船用燃气涡轮发动机和辅助动力单元。
所描绘的示例性核心涡轮发动机16通常包括限定了环形入口20的大体上为管状的外壳体18。外壳体18包覆了具有串联流关系的:压缩机区段,其包括增压器或低压(LP)压缩机22和高压(HP)压缩机24;燃烧区段26;涡轮区段,其包括高压(HP)涡轮28和低压(LP)涡轮30;以及喷气排气喷嘴区段32。高压(HP)轴或转轴34将HP涡轮28传动地连接到HP压缩机24。低压(LP)轴或转轴36将LP涡轮30传动地连接到LP压缩机22。
对于所描绘的实施例,风扇区段14包括变距风扇38,所述变距风扇38具有以间隔开的方式联接到盘42的多个风扇叶片40。如所描绘的,风扇叶片40大体上沿着径向R从盘42向外延伸。每个风扇叶片40能够围绕间距轴线P相对于盘42旋转,原因是风扇叶片40可操作地联接到合适的致动构件44,所述致动构件44被构造成联合地共同改变风扇叶片40的间距。风扇叶片40、盘42和致动构件44可通过LP轴36跨越任选的动力齿轮箱46围绕纵向轴线12一起旋转。动力齿轮箱46包括多个齿轮,以用于将LP轴36的旋转速度逐步降低到更高效的旋转风扇速度。
仍参考图3的示例性实施例,盘42由可旋转的前部机舱48覆盖,前部机舱48具有空气动力学轮廓以促使空气流通过多个风扇叶片40。另外,示例性风扇区段14包括环形风扇壳体或外部机舱50,其沿圆周包围风扇38和/或核心涡轮发动机16的至少一部分。应了解,机舱50可被构造成相对于核心涡轮发动机16由多个沿圆周隔开的出口导叶52支撑。此外,机舱50的下游区段54可在核心涡轮发动机16的外部上延伸,以便在其间限定旁路气流通路56。
在涡扇发动机10的操作期间,一定体积的空气58通过机舱50的相关联入口60和/或风扇区段14进入涡扇10。当所述体积的空气58横穿风扇叶片40时,如由箭头62指示的空气58的第一部分被引导或传送到旁通气流通路56中,且如由箭头64指示的空气58的第二部分被引导或传送到LP压缩机22中。空气的第一部分62和空气的第二部分64之间的比率通常称为旁路比。在空气的第二部分64被导引通过高压(HP)压缩机24并进入燃烧区段26时,空气的第二部分64的压力接着增加,在燃烧区段26处,空气与燃料混合并燃烧以提供燃烧气体66。
燃烧气体66被导引通过HP涡轮28,在HP涡轮28处经由连接到外壳体18的HP涡轮定子轮叶68和连接到HP轴或转轴34的HP涡轮转子叶片70的顺序级提取来自燃烧气体66的热能和/或动能的一部分,因此使HP轴或转轴34旋转,进而支持HP压缩机24的操作。燃烧气体66接着被导引通过LP涡轮30,在LP涡轮30处经由连接到外壳体18的LP涡轮定子轮叶72和连接到LP轴或转轴36的LP涡轮转子叶片74的顺序级提取来自燃烧气体66的热能和动能的第二部分,因此使LP轴或转轴36旋转,进而支持LP压缩机22的操作和/或风扇38的旋转。
燃烧气体66随后被导引通过核心涡轮发动机16的喷气排气喷嘴区段32以提供推进力。同时,当空气的第一部分62在从涡扇10的风扇喷嘴排气区段76排出之前被导引通过旁路气流通路56时,空气的第一部分62的压力显著增大,从而也提供推进力。HP涡轮28、LP涡轮30和喷气排气喷嘴区段32至少部分地限定热气体路径78,以用于将燃烧气体66导引通过核心涡轮发动机16。
实例1
基于表1中所示的配方制备根据式8的含铝钽酸铪。这些含铝钽酸铪化合物各自具有接近于CMC基材的CTE的CTE,使得这些化合物特别地适合用作EBC涂层体系的层。
表1
化合物 | CTE(x10<sup>-6</sup>/°F) |
Er<sub>0.33</sub>Al<sub>0.37</sub>In<sub>0.3</sub>HfTaO<sub>6</sub> | 2.70 |
Sm<sub>0.43</sub>Al<sub>0.4</sub>Ga<sub>0.17</sub>HfTaO<sub>6</sub> | 1.98 |
Sm<sub>0.29</sub>Al<sub>0.42</sub>In<sub>0.29</sub>HfTaO<sub>6</sub> | 1.81 |
Sm<sub>0.36</sub>Al<sub>0.47</sub>In<sub>0.17</sub>HfTaO<sub>6</sub> | 2.15 |
实例2
基于表2中所示的配方制备根据式9的含铝钽酸铪。这些含钽酸铪化合物各自具有CTE,其虽然并非特别接近CMC基材的CTE,但仍然适合用作EBC涂层体系的薄层。
表2
化合物 | CTE(x10<sup>-6</sup>/°F) |
Er<sub>0.48</sub>Al<sub>0.2</sub>Ga<sub>0.32</sub>HfTaO<sub>6</sub> | 3.88 |
Er<sub>0.557</sub>Al<sub>0.443</sub>HfTaO<sub>6</sub> | 3.60 |
本书面描述使用示例性实施例来公开本发明,包括最佳模式,并且还使本领域的任何技术人员能够实践本发明,包括制造和使用任何装置或系统以及执行任何包括在内的方法。本发明的可获专利的范围由权利要求书限定,且可包括所属领域的技术人员所想到的其它实例。如果此类其它实例包括并非不同于权利要求书的字面语言的结构要素,或如果它们包括与权利要求书的字面语言无实质差异的等效结构要素,那么它们既定在权利要求范围内。
Claims (20)
1.一种化合物,其具有下式:
AxBbLn1-x-bHf1-t-dTitDdMO6
其中:
A是Al、Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物;
x是0.01至0.99;
b是0至0.5,其中1-x-b是0至0.99,使得Ln存在于所述化合物中;
Ln是Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或其混合物,并且其中就组成而言Ln不同于A;
t是0至0.99;
D是Zr、Ce、Ge、Si或其混合物;
d是0至0.5;
t和d之和小于1,使得Hf存在于所述化合物中;和
M是Ta、Nb或其混合物。
2.根据权利要求1所述的化合物,其中b是0,并且其中x是0.05至0.9。
3.根据权利要求1所述的化合物,其中b是大于0至0.5,并且其中x是0.05至0.9,其中x和b之和小于1。
4.根据权利要求1所述的化合物,其中b是0,并且其中t是0。
5.根据权利要求1所述的化合物,其中b是0,并且其中d是0。
6.根据权利要求1所述的化合物,其中:b是0;t是0;并且d是0。
7.根据权利要求6所述的化合物,其中:M是Ta。
8.根据权利要求1所述的化合物,其中A包括Al,使得所述化合物具有下式:
AlxA’aBbLn1-x-a-bHf1-t-dTitDdMO6
其中:
x是0.01至0.99,使得Al存在于所述化合物中;
A’是Ga、In、Sc、Y、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Fe、Cr、Co、Mn、Bi或其混合物;
a是0至0.99;
b是0至0.5,其中1-x-a-b是0至0.99,使得Ln存在于所述化合物中;
Ln是Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或其混合物,并且其中就组成而言Ln不同于A;
t是0至0.99;
D是Zr、Ce、Ge、Si或其混合物;
d是0至0.5;
t和d之和小于1,使得Hf存在于所述化合物中;和
M是Ta、Nb或其混合物。
9.根据权利要求1所述的化合物,其中所述化合物具有下式:
AlxGayBbLn1-x-y-bHf1-t-dTitDdMO6
其中:
x是0.01至0.99,使得Al存在于所述化合物中;
y是0.01至0.99,使得Ga存在于所述化合物中;
b是0至0.5,其中1-x-a-b是0至0.99,使得Ln存在于所述化合物中;
Ln是Sc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu或其混合物,并且其中就组成而言Ln不同于A;
t是0至0.99;
D是Zr、Ce、Ge、Si或其混合物;
d是0至0.5;
t和d之和小于1,使得Hf存在于所述化合物中;和
M是Ta、Nb或其混合物。
10.根据权利要求1所述的化合物,其中Ln是Er、Y、Ho或其混合物。
11.根据权利要求1所述的化合物,其中t是0,并且其中d是大于0至0.25。
12.一种含铝钽酸铪,其具有下式:
Al1-x-yA’xA”yHfTaO6
其中:
A’是Er、Sm或其混合物;
x是0.3至0.45;
A”是In、Ga或其混合物;
y是0.15至0.35;和
(x + y)是0.5至0.7。
13.根据权利要求12所述的含铝钽酸铪,其中A’是Er或Sm,并且其中A”是In或Ga。
14.根据权利要求12所述的含铝钽酸铪,其具有下式:Er0.33Al0.37In0.3HfTaO6。
15.根据权利要求12所述的含铝钽酸铪,其具有下式:Sm0.43Al0.4Ga0.17HfTaO6。
16.根据权利要求12所述的含铝钽酸铪,其具有下式:Sm0.29Al0.42In0.29HfTaO6。
17.根据权利要求12所述的含铝钽酸铪,其具有下式:Sm0.36Al0.47In0.17HfTaO6。
18.一种含铝和铒的钽酸铪,其具有下式:
Al1-x-yErxGayHfTaO6
其中:
x是0.4至0.6;
y是0至0.4;和
(x + y)是0.5至0.85。
19.根据权利要求18所述的含铝和铒的钽酸铪,其具有下式:Er0.48Al0.2Ga0.32HfTaO6。
20.根据权利要求18所述的含铝和铒的钽酸铪,其具有下式:Er0.557Al0.443HfTaO6。
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2017
- 2017-08-29 US US15/689,406 patent/US10696601B2/en active Active
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2018
- 2018-08-09 EP EP18188148.3A patent/EP3450415A1/en active Pending
- 2018-08-16 CA CA3014399A patent/CA3014399C/en active Active
- 2018-08-24 JP JP2018156836A patent/JP6698764B2/ja active Active
- 2018-08-28 CN CN201810986621.XA patent/CN109422290B/zh active Active
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US20200277237A1 (en) | 2020-09-03 |
US20190062228A1 (en) | 2019-02-28 |
CN109422290A (zh) | 2019-03-05 |
CA3014399C (en) | 2020-12-29 |
JP2019048762A (ja) | 2019-03-28 |
EP3450415A1 (en) | 2019-03-06 |
JP6698764B2 (ja) | 2020-05-27 |
US11667584B2 (en) | 2023-06-06 |
US10696601B2 (en) | 2020-06-30 |
CA3014399A1 (en) | 2019-02-28 |
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