CN109406989A - A kind of load circuit detection method, load detecting circuit and electronic equipment - Google Patents
A kind of load circuit detection method, load detecting circuit and electronic equipment Download PDFInfo
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- CN109406989A CN109406989A CN201811339856.6A CN201811339856A CN109406989A CN 109406989 A CN109406989 A CN 109406989A CN 201811339856 A CN201811339856 A CN 201811339856A CN 109406989 A CN109406989 A CN 109406989A
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- 238000001514 detection method Methods 0.000 title claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 207
- 239000010703 silicon Substances 0.000 claims abstract description 207
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 206
- 238000005070 sampling Methods 0.000 claims abstract description 42
- 238000012423 maintenance Methods 0.000 claims abstract description 16
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims description 39
- 230000015556 catabolic process Effects 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 11
- 238000007493 shaping process Methods 0.000 claims description 11
- 230000009467 reduction Effects 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 230000002045 lasting effect Effects 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000001755 vocal effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2801—Testing of printed circuits, backplanes, motherboards, hybrid circuits or carriers for multichip packages [MCP]
- G01R31/2806—Apparatus therefor, e.g. test stations, drivers, analysers, conveyors
Abstract
The invention belongs to load detecting technical field more particularly to a kind of load circuit detection methods, load detecting circuit and electronic equipment.By to the silicon-controlled transmission driving signal, the level signal for obtaining the load current of the load detecting circuit sampling and being converted by the load current, the load current includes that sampling flows through the first electric current of the load or do not flow through the load and flow through the second electric current of the load detecting circuit, second electric current is less than the silicon-controlled maintenance electric current, further according to the driving signal and the level signal, the working condition of the described silicon-controlled or described load is determined.Therefore, the detection that can be realized load with silicon-controlled state, improves whole security performance.
Description
Technical field
The present invention relates to load detecting technical field more particularly to a kind of load circuit detection methods, load detecting circuit
And electronic equipment.
Background technique
Currently, load control is the final purpose of all kinds of electronic intelligence control products, wherein it is silicon-controlled as switch, it bears
Load and controllable silicon in serial connection simultaneously access power supply, to realize the control to load.
In the implementation of the present invention, the existing technology has at least the following problems for discovery by inventor:
When load circuit breaks down, power supply can not confirm load or silicon-controlled shape also always to provide power supply
State is greatly threatened to safety belt.
Summary of the invention
Present invention seek to address that conventional load circuit detection mode loaded in load open circuit perhaps silicon-controlled failure or
The problems such as silicon-controlled state can not confirm and cause security risk, provides a kind of load circuit detection method, technical solution is such as
Under:
In order to solve the above technical problems, the embodiment of the invention provides following technical solutions:
In a first aspect, being applied to load detecting circuit, institute the embodiment of the invention provides a kind of load circuit detection method
Load detecting circuit is stated for detecting the working condition of load circuit, the load circuit includes silicon-controlled with load, it is described can
It controls silicon and the load connects, which comprises
To the silicon-controlled transmission driving signal, the driving signal is used to indicate the silicon-controlled work on state
Or off state；
The level signal for obtaining the load current of the load detecting circuit sampling and being converted by the load current,
The load current includes that sampling flows through the first electric current of the load or do not flow through the load and flow through the load detecting
Second electric current of circuit, second electric current are less than the silicon-controlled maintenance electric current；
According to the driving signal and the level signal, the working condition of the described silicon-controlled or described load is determined.
It is further, described that the silicon-controlled working condition is determined according to the driving signal and the level signal,
Include:
The silicon-controlled work is used to indicate in off state in the driving signal, according to the electricity of the level signal
Flat type determines the silicon-controlled working condition.
Further, the multilevel type according to the level signal determines the silicon-controlled working condition, packet
It includes:
It is described silicon-controlled for normal condition when the level signal is periodic low and high level；
It is described silicon-controlled for breakdown conditions or short-circuit condition when the level signal is lasting low level.
Further, when it is described it is silicon-controlled be normal condition, it is described according to the driving signal and the level signal, really
The working condition of the fixed load, comprising:
When the driving signal is used to indicate the silicon-controlled work on state, and the level signal is periodically
When low and high level, the load is malfunction；
When the driving signal is used to indicate the silicon-controlled work on state, and the level signal is duration
When low level, the load is normal condition.
Further, described to before the silicon-controlled transmission driving signal, comprising:
Obtain the zero cross signal of power supply；
According to the zero cross signal, setting sends the time of the silicon-controlled driving signal.
Second aspect, the embodiment of the present invention provide a kind of load detecting circuit, for detecting the working condition of load circuit,
The load circuit includes silicon-controlled and load, and the described silicon-controlled and load connects, and the load detecting circuit includes:
Sampling module, the sampling module and the load connect, for sample load current and by the load it is electric
Circulation changes level signal into, the load current include sampling flow through the first electric current of the load or do not flow through the load and
The second electric current of the load detecting circuit is flowed through, second electric current is less than the silicon-controlled maintenance electric current；
Control module, the control module and the sampling module and silicon-controlled connection；
Wherein, the control module includes:
At least one processor；And
The memory being connect at least one described processor communication；Wherein, the memory be stored with can by it is described extremely
The instruction that a few processor executes, described instruction are executed by least one described processor, so that at least one described processing
Device can be used in executing load circuit detection method as described above.
Further, the sampling module includes: the sampled point road in parallel with the load, and with the sample circuit
And the shaping circuit of control module connection；
The sample circuit is used to obtain the load current of the load detecting circuit sampling；
The shaping circuit is used to the load current being converted into level signal.
Further, the sample circuit includes: first resistor, and one end of the first resistor is another with the load
End connects and access power supply, the other end are connect with one end of the load.
Further, the shaping circuit includes: second resistance, first diode, the second diode and first capacitor；
One end of the second resistance is connect with one end of the load, the other end of the second resistance and described first
The anode connection of the cathode of diode and second diode, the plus earth of the first diode, the described 2nd 2
The cathode of pole pipe accesses forward voltage, one end of the first capacitor and the control module and the other end of second resistance connects
It connects, the other end ground connection of the first capacitor.
Further, the load detecting circuit further include:
Circuit is protected, the protection is electrically connected between the silicon-controlled control terminal and control module, for preventing
Driving voltage silicon-controlled is damaged to described.
The protection circuit includes 3rd resistor and the second capacitor, and one end of second capacitor and the third are electric
The other end of resistance connects, and the other end of second capacitor is connect with the silicon-controlled control terminal, and the one of the 3rd resistor
End connects the control module.
Further, the load detecting circuit further include:
Capacitance-resistance voltage reduction circuit, the capacitance-resistance voltage reduction circuit are connect with the other end of the load, for power supply signal into
Row decompression, pressure stabilizing and filtering processing；
The capacitance-resistance voltage reduction circuit includes the 4th resistance, third capacitor, the 5th diode, zener diode and electrolysis electricity
Hold；One end of 4th resistance is connect with power input, and the other end is connect with one end of the third capacitor, the third
The other end of capacitor is connect with the anode of the cathode of the zener diode and the 5th diode, and the zener diode is just
Pole ground connection, the cathode of the 5th diode are connect with the anode of the electrolytic capacitor, and the anode access of the electrolytic capacitor is just
To voltage, the cathode of the electrolytic capacitor is grounded.
Further, the load detecting circuit further include:
Zero cross detection circuit, the zero cross detection circuit are connect with the other end of the load and the control module,
For carrying out zero passage detection to power supply signal, and the zero cross signal that will acquire is sent to processing module；
The zero cross detection circuit includes 3rd resistor, third diode and the 4th diode；The 3rd resistor
One end is connect with power input, the cathode and the 4th diode of the other end of the 3rd resistor and the third diode
Anode connection, the anode of third diode cathode ground connection, the 4th diode is connect with the control module, described
The cathode of 4th diode accesses forward voltage.
The third aspect, the embodiment of the present invention provide a kind of electronic equipment, comprising:
Shell；And
Load detecting circuit as the aforementioned, the load detecting circuit are set in the shell.
The beneficial effect of the embodiment of the present invention is: load circuit detection method provided in this embodiment, load detecting electricity
Road and electronic equipment, by obtaining the load current of the load detecting circuit sampling to the silicon-controlled transmission driving signal
And the level signal being converted by the load current, the load current include the first electric current that sampling flows through the load
Or do not flow through the load and flow through the second electric current of the load detecting circuit, second electric current is less than described silicon-controlled
Electric current is maintained to determine the working condition of the described silicon-controlled or described load further according to the driving signal and the level signal.
Therefore, the detection that can be realized load with silicon-controlled state, improves whole security performance.
Detailed description of the invention
Fig. 1 is the application scenarios schematic diagram of load detecting provided in an embodiment of the present invention；
Fig. 2 is that the embodiment of the present invention provides a kind of flow diagram of load circuit detection method；
Fig. 3 is a kind of structural schematic diagram of load detecting circuit provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another load detecting circuit provided in an embodiment of the present invention；
Fig. 5 is the structural schematic diagram of another load detecting circuit provided in an embodiment of the present invention；
Fig. 6 is the structural schematic diagram of another load detecting circuit provided in an embodiment of the present invention；
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
It should be noted that each feature in the embodiment of the present invention can be combined with each other, in this hair if do not conflicted
Within bright protection scope.In addition, though having carried out functional module division in schematic device, shows patrol in flow charts
Sequence is collected, but in some cases, it can be shown in the sequence execution in the module division being different from device or flow chart
The step of out or describing.Furthermore the printed words such as " first " of the present invention, " second ", " third " are not to data and execution
Order is defined, and is distinguished to function and the essentially identical identical entry of effect or similar item.
When realizing intelligent product control, realized using the conducting or shutdown of switching component is to the control of load
An essential important link.For example, many home wiring control plates are usually to be realized using silicon-controlled on-off pair at present
The control of load, but due to load and it is silicon-controlled itself be all electronic component, there is failure and risk out of control, and these
Critical component is likely to result in great property loss or casualties once failure is perhaps out of control, and therefore, it is necessary to negative
It carries circuit and one load detecting circuit realization load and silicon-controlled monitoring is set.
In general, load detecting circuit is typically provided with sampling module to obtain the current signal in load circuit, and should
Detected value is converted into voltage signal, and the voltage signal that the signal and load detecting circuit further according to load circuit input obtain judges
The state of load and switching component in load circuit.Single-chip microcontroller is generallyd use in load detecting circuit to obtain voltage letter
Number.Also, sampling module is generally connected serially in load circuit by technical solution documented by prior art center, negative convenient for obtaining
Carry the electric current in circuit, and this kind of detection mode be when load is open circuit when the silicon-controlled failure of person, load detecting circuit is then in
Vacant state is in unknown to load and silicon-controlled particular state, and power supply also provides power supply to load always, then deposits
In certain security risk.
Based on this, the embodiment of the present invention provides a kind of load circuit detection method, load detecting circuit and electronic equipment.
Wherein, the load circuit detection method provided in an embodiment of the present invention applied to load detecting circuit is that one kind can
Realize the load circuit detection method for improving load circuit security performance, specifically: to the silicon-controlled transmission driving signal, institute
It states driving signal and is used to indicate the silicon-controlled work on state or off state；
The level signal for obtaining the load current of the load detecting circuit sampling and being converted by the load current,
The load current includes that sampling flows through the first electric current of the load or do not flow through the load and flow through the load detecting
Second electric current of circuit, second electric current are less than the silicon-controlled maintenance electric current；
According to the driving signal and the level signal, the working condition of the described silicon-controlled or described load is determined.
Wherein, in embodiments of the present invention, by obtaining the load detecting electricity to the silicon-controlled transmission driving signal
The load current of road sampling and the level signal being converted by the load current, the load current include that sampling flows through institute
It states the first electric current of load or does not flow through the load and flow through the second electric current of the load detecting circuit, second electric current
Described silicon-controlled or institute is determined further according to the driving signal and the level signal less than the silicon-controlled maintenance electric current
State the working condition of load.Thus it is guaranteed that the load detecting circuit is not at vacant state, it is negative so as to provide in real time
Load and silicon-controlled state, improve whole security performance.
Wherein, the load detecting circuit of the working condition provided in an embodiment of the present invention for detecting load circuit is by soft
What part program was constituted can be realized the load circuit detection method provided in an embodiment of the present invention applied to load detecting circuit
Virtual bench is based on identical with the load circuit detection method provided in an embodiment of the present invention applied to load detecting circuit
Inventive concept, technical characteristic having the same and beneficial effect.
Wherein, electronic equipment provided in an embodiment of the present invention is to be able to carry out load circuit inspection provided in an embodiment of the present invention
Survey method, alternatively, running load detecting circuit provided in an embodiment of the present invention.
Specifically, with reference to the accompanying drawing, the embodiment of the present invention is further elaborated.
Attached drawing 1 is the application scenarios schematic diagram for the load detecting that traditional technology provides.Wherein, include: in the application environment
Power supply, load, silicon-controlled and load detecting module.
Wherein, circuit, silicon-controlled realization on-off action, silicon-controlled control terminal is connected in power supply, load and silicon-controlled formation
Further include access driving signal, according to driving signal realize on or off working condition, thus using itself shutdown with
The control to load is realized in conducting.Load detecting module is usually made of sampling module and detection module, and sampling module is generally
Resistance, inductance etc. can be realized the component of partial pressure effect, and detection module is usually single-chip microcontroller, carry out signal to sampling module and obtain
It takes, and the signal that the signal according to acquired in detection module and conducting circuit are inputted, judges the silicon-controlled work shape with load
State.
Wherein, it should be noted that localization method provided in an embodiment of the present invention can also further be extended to other
In suitable application environment, and it is not limited to application environment shown in Fig. 1.In actual application, which may be used also
To include more objects.
Fig. 2 is that a kind of flow diagram of load circuit detection method provided in an embodiment of the present invention specifically please refers to
Fig. 2, this method may include:
S10: to the silicon-controlled transmission driving signal, the driving signal is used to indicate the silicon-controlled work and is being connected
State or off state；
In the present embodiment, driving signal is generated by the controller of realization control action, is sent to silicon-controlled control terminal,
Control is realized to silicon-controlled conducting or shutdown.Driving signal generally includes high level or low level, for example, silicon-controlled
When for normal working condition, when driving signal is high level, silicon-controlled is on state, when driving signal is low level
When, silicon-controlled is off state；The driving signal is used to indicate the silicon-controlled work on state or off state,
That is driving signal includes Continuity signal or pick-off signal, when Continuity signal is referred to silicon-controlled for normal working condition, is driven
It moves silicon-controlled in the conductive state, when pick-off signal is referred to silicon-controlled for normal working condition, drives silicon-controlled in cutting
Only state, in general, Continuity signal be high level and it is low level one of them, pick-off signal is then another.It needs to illustrate
, to the silicon-controlled transmission driving signal, the driving signal be used to indicate the silicon-controlled work on state or
Off state is no determination is silicon-controlled and load is carries out when which kind of state, that is to say, that driving signal at this time
Will centainly it make silicon-controlled in the corresponding working condition of the driving signal；For example, driving signal at this time is instruction
It is described it is silicon-controlled work in off state a kind of this signal, and at this time it is silicon-controlled be a kind of " short-circuit condition " this abnormal work
Make state, at this time silicon-controlled can't work according to driving signal in the working condition of cut-off, and be in short-circuit condition.
S20: the level for obtaining the load current of the load detecting circuit sampling and being converted by the load current
Signal, the load current include that sampling flows through the first electric current of the load or do not flow through the load and flow through the load
Second electric current of detection circuit, second electric current are less than the silicon-controlled maintenance electric current；
In the present embodiment, the load current includes the first electric current and the second electric current, and the first electric current is flowed through from power supply
The electric current obtained after load, the second electric current be do not flow through load and directly through load detecting circuit after electric current obtained,
It should be noted that a module in the load detecting circuit of the present embodiment is in parallel with the load, occur in the load
Failure and can not be formed by load conducting circuit when, power supply can directly through the module, thus obtain with flow through load after
Different types of second electric current of first electric current obtained.Further, the overall electrical resistance of the module is significantly larger than the electricity loaded
Resistance, so that the resistance value of the module can neglect influence caused by the overall current of load circuit when loading normal
Slightly disregard (because the module is in parallel with load).
Further, second electric current is less than the silicon-controlled maintenance electric current, it should be noted that so-called silicon-controlled
Maintenance electric current, that is, keep the minimum current of silicon-controlled forward conduction, when flow through silicon-controlled electric current be less than maintain electric current when, i.e.,
Make to meet control machines turn-on condition, it is silicon-controlled to be also automatically closed.In other words, load circuit can not be formed in load
When the circuit of conducting, power supply flows through the electric current after load detecting circuit and is not enough to reach silicon-controlled maintenance electric current, and even if can
The driving signal of control silicon is to indicate silicon-controlled work on state, which is in off state in turn.One
Aspect, which plays, protects silicon-controlled effect, on the other hand realized using this silicon-controlled characteristic the identification of the detection to load compared with
Height, even if load is in open-circuit condition, detection circuit can also obtain load or silicon-controlled specific works state, improve whole
The security performance of body.
S30: according to the driving signal and the level signal, the work shape of the described silicon-controlled or described load is determined
State.
In the present embodiment, described according to the driving signal and the level signal, it determines described silicon-controlled or described
The working condition of load, specific as follows to state four kinds of situations:
When the driving signal instruction it is described it is silicon-controlled work on state, and level signal be periodically height
When level, silicon-controlled is normal working condition and the load is open-circuit condition；
When the driving signal instruction it is described it is silicon-controlled work on state, and level signal be duration low electricity
Usually, it is described it is silicon-controlled be short circuit perhaps breakdown conditions and load nondeterministic statement or described silicon-controlled for normal work
State and it is described load be normal operating conditions；
When the driving signal instruction it is described it is silicon-controlled work in off state, and level signal be periodically height
When level, it is described it is silicon-controlled for normal working condition and load nondeterministic statement；
When the driving signal instruction it is described it is silicon-controlled work in off state, and level signal be duration low electricity
Usually, it is described it is silicon-controlled for short circuit or breakdown conditions and load be in nondeterministic statement；
It should be noted that load nondeterministic statement refers to that load can be normal operating conditions be also open-circuit condition, when
Silicon-controlled be normal condition can also be short circuit or when breakdown conditions, then needs preferentially to determine silicon-controlled working condition；When
It is silicon-controlled silicon-controlled for that first should repair or replace this when short-circuit perhaps breakdown conditions, reach normal work shape silicon-controlled
After state, the working condition of further detection load may be selected；When it is silicon-controlled be normal working condition, directly can further detect
The working condition of load.
For example, when detecting the driving signal instruction silicon-controlled work on state, and level signal is to hold
When the low level of continuous property, there are two kinds of situations with silicon-controlled state for load:
1. it is described it is silicon-controlled for short circuit or breakdown conditions, and load be nondeterministic statement, i.e., load can be normal condition
Or open-circuit condition any state；
2. it is described it is silicon-controlled for normal working condition and it is described load be normal operating conditions；
When detecting this kind of situation, because silicon-controlled state is uncertain, then need to further determine that silicon-controlled work
State, when detecting silicon-controlled working condition is normal working condition, then the testing result of load circuit corresponds to second
Kind of situation, when detect silicon-controlled working condition for short circuit or breakdown conditions, then the testing result of load circuit corresponding the
A kind of situation.
In the present embodiment, the level obtained using the driving signal and load detecting circuit that obtain input load circuit
Signal detects load with silicon-controlled working condition, it is ensured that the safety of load circuit avoids security risk.
Further, according to the driving signal and the level signal, the work of the described silicon-controlled or described load is determined
Make state, including according to the driving signal and the level signal, determines the silicon-controlled working condition；
Specifically, the control driving signal instruction silicon-controlled work determines silicon-controlled in off state
State, when silicon-controlled for short-circuit condition or breakdown conditions, the personnel that need repairing further are repaired, when silicon-controlled for good shape
State can control the driving signal to be used to indicate the silicon-controlled work on state, the work shape that further judgement loads
State.
Specifically, described that the silicon-controlled working condition is determined according to the driving signal and the level signal, packet
It includes:
The silicon-controlled work is used to indicate in off state in the driving signal, according to the electricity of the level signal
Flat type determines the silicon-controlled working condition.
It should be noted that it is silicon-controlled be normal working condition when, the driving signal is used to indicate described silicon-controlled
In off state, the level signal that load detecting circuit obtains is periodic low and high level for work, in other words, power supply letter
Number without silicon-controlled ground connection, but directly through load detecting circuit, and at this time because of a part of load detecting circuit and negative
Parallel connection is carried, even if load is uncertain working condition, the periodic height for also having no effect on load detecting circuit acquisition is electric
Flat level signal, and silicon-controlled working condition can be determined according to this characteristic.Preferentially determine silicon-controlled shape
State can be the subsequent working condition to load into providing reference frame, thus realize in load circuit to load with it is silicon-controlled
Accurate detection, eliminate due to silicon control state is indefinite caused by security risk.
Specifically, the multilevel type according to the level signal determines the silicon-controlled working condition, comprising:
It is described silicon-controlled for normal condition when the level signal is periodic low and high level；
It is described silicon-controlled for breakdown conditions or short-circuit condition when the level signal is lasting low level.
Wherein, detect it is described it is silicon-controlled for breakdown conditions or short-circuit condition when, detection system can automatically generate alarm
Information carries out the switching of silicon-controlled route with text or verbal announcement user or administrative staff or to the silicon-controlled progress
Maintenance or replacement.Accurate detection to silicon-controlled working condition is eliminated and causes load circuit because silicon control state is indefinite
Security risk, improve whole security performance.
It further, can be further to load when ensuring silicon-controlled working condition is normal working condition
Working condition is detected.It is silicon-controlled be normal working condition under the premise of and the driving signal be used to indicate it is described can
Silicon work is controlled on state, the working condition of load is detected at this time, the working condition of load also can be obtained further
It accurately detects, it is normal working condition or open-circuit condition that is to say, which can accurately detect load,.
Specifically, when it is described it is silicon-controlled be normal condition, described according to the driving signal and the level signal, determination
The working condition of the load, comprising:
When the driving signal is used to indicate the silicon-controlled work on state, and the level signal is periodically
When low and high level, the load is open-circuit condition；
When the driving signal is used to indicate the silicon-controlled work on state, and the level signal is duration
When low level, the load is normal condition.
Wherein, it in the working condition that confirmed silicon-controlled working condition and then confirmation load, realizes to loading back
The detection of two crucial component states, largely solves hiding security hidden trouble, improves entirety in road
Security performance.
In the present embodiment, described to before the silicon-controlled transmission driving signal, comprising:
Obtain the zero cross signal of power supply；
According to the zero cross signal, setting sends the time of the silicon-controlled driving signal.
It should be noted that power supply signal is that pulse signal namely power supply signal are believed for periodic low and high level type
Number, it can be not have in this momentary load circuit of zero crossing by a zero point when high level and low level are converted
Power supply, and realize the switching of silicon-controlled conducting or off state in a flash at this, it can significantly reduce to controllable
The loss of silicon promotes silicon-controlled service life.Therefore, acquired zero cross signal is sent to silicon-controlled signal controller, and root
According to the sending time parameter of zero cross signal setting driving signal, reduces to silicon-controlled loss, promote silicon-controlled service life.
According to the above-mentioned technical solution, load circuit detection method provided in this embodiment is by the silicon-controlled hair
Driving signal is sent, the driving signal is used to indicate the silicon-controlled work on state or off state；It obtains described negative
The level signal for carrying the load current of detection circuit sampling and being converted by the load current, the load current include adopting
Sample flows through the first electric current of the load or does not flow through the load and flow through the second electric current of the load detecting circuit, described
Second electric current is less than the silicon-controlled maintenance electric current；According to the driving signal and the level signal, determine described controllable
Silicon or the working condition of the load.Therefore, the detection that can be realized load with silicon-controlled state, improves whole safety
Energy.
It should be noted that not necessarily there is centainly successive between above steps in above-mentioned each embodiment
Sequentially, those of ordinary skill in the art, according to an embodiment of the present invention to describe to be appreciated that in different embodiments, above-mentioned each step
Suddenly there can be the different sequences that executes, also i.e., it is possible to execute parallel, execution etc. can also be exchanged.
Fig. 3 is a kind of structural schematic diagram of load detecting circuit provided in an embodiment of the present invention；Specifically, Fig. 2 is please referred to
And Fig. 3, a kind of load detecting circuit, for detecting the working condition of load circuit, the load circuit includes silicon-controlled T and bears
L is carried, the silicon-controlled T is connect with the load L, and the load detecting circuit includes sampling module 10 and control module 30.
The sampling module 10 is connect with the load L, for sampling load current and converting the load current
At level signal, the load current includes that sampling flows through the first electric current of the load or do not flow through the load and flow through institute
The second electric current of load detecting circuit is stated, second electric current is less than the silicon-controlled maintenance electric current；
In some embodiments, sampling module 10 acquires load current and has diversified forms, can be with are as follows: when load L with can
Control silicon T is in normal working condition, and in silicon-controlled T conducting, sampling module 10 acquires the first electric current for flowing through load L；
And when load L is in open circuit, and when silicon-controlled T is in the conductive state, the acquisition of sampling module 10 do not flow through load L and directly through
Second electric current of load detecting circuit.
The control module 30 is connect with the sampling module 10 and silicon-controlled T respectively；
In some embodiments, control module 30 has multiple signal input output end mouths, multiple signal input output ends
Mouth is for reception and output signal, to realize the signal interaction with other execution terminals or server.Specifically, this implementation
Control module 30 is used to export the driving signal of silicon-controlled T and receives the zero cross signal of power supply and the level of load circuit in example
Signal plays the role of driving and protection load circuit, and realizes detection to load circuit.
Further, referring to Fig. 3, the control module 30 includes:
At least one processor 31；And
With the memory 32 of at least one described processor 31 communication connection；Wherein, be stored with can quilt for the memory 32
The instruction that described at least one processor 31 executes, described instruction are executed by least one described processor 31 so that it is described extremely
A few processor 31 can be used in executing the load circuit detection method of foregoing individual embodiments.
Referring to Fig. 3, the sampling module 10 includes: the sample circuit 12 in parallel with the load L, and adopted with described
The shaping circuit 11 that sample circuit 12 and control module 30 connect；
The sample circuit 12 is used to sample the load current in the load circuit；
The shaping circuit 11 is used to the load current being converted into level signal.
In this city embodiment, sample circuit 12 accesses load circuit, and the sampling by the way of in parallel with load L
The resistance value of circuit 12 can be far longer than the resistance value of load L, so that in load L sample circuit 12 in parallel to produced by load circuit
Influence it is negligible.Also, when loading L open circuit, because the sample circuit 12 and load L are parallel connection, then load back
Road will form power supply-sample circuit-it is silicon-controlled-circuit of ground wire, cause to detect because loading L and being open-circuit condition without making
One end of circuit and silicon-controlled T are vacant state, can not detect or obtain silicon-controlled T or the state of other components,
So that load circuit is whole all to form security risk for uncertain state.
It should be noted that because sample circuit 12 of the invention relative to load circuit is that biggish another is negative for resistance value
It carries, and it is the maintenance electric current less than silicon-controlled T that power supply, which is not passed through load and flows through the electric current after sample circuit 12, and can when flow through
When controlling the electric current at the both ends silicon T less than electric current is maintained, no matter whether the driving signal of the control terminal input of silicon-controlled T is to indicate that this can
Control silicon T is the operating mode of conducting, and silicon-controlled T is off state, and is directly converted into electricity after the sampled module 10 of electric current
Ordinary mail number, the level signal that control module 30 obtains at this time is periodic low and high level signal.The load of the present embodiment
Detection circuit serves as load effect when loading L and being open-circuit condition, can also further detect the working condition of silicon-controlled T, without
It can lead to silicon-controlled one end T and load detecting circuit is in vacant state because load L is open-circuit condition, it can not be to loading back
The working condition on road is detected, this security risk is eliminated, and improves whole security performance.
Specifically, attached drawing 3 is please referred to, the sample circuit 12 includes: first resistor R1, one end of the first resistor R1
It is connect and accesses power supply with the other end of the load L, the other end is connect with one end of the load L.
Wherein, sample circuit 12 and not merely for single resistance constitute, can also be multiple and different connection types resistance group
At being also not merely confined to this type of resistance, can also be inductance or the biggish component of other resistance values.The sample circuit 12
Play the role of current limliting when loading L and being open-circuit condition, the electric current of load circuit is pulled low to the maintenance electric current of silicon-controlled T, is made
Obtaining the silicon-controlled T is off state, to play the role of protection.
Specifically, the shaping circuit 11 includes: second resistance R2, first diode D1, the second diode D2 and first
Capacitor C1；
One end of the second resistance R2 is connect with one end of the load L, the other end of the second resistance R2 and institute
The anode connection of the cathode and the second diode D2 of first diode D1 is stated, the anode of the first diode D1 connects
Ground, the cathode of the second diode D2 access forward voltage, one end of the first capacitor C1 and the control module 30 with
And the other end connection of second resistance R2, the other end ground connection of the first capacitor C1.
Further, the shaping circuit 11 can also specifically be divided into current limiting unit, clipping unit and filter unit；
Current limiting unit includes that the second resistance R2 for limiting electric current prevents electric current is excessive from making to load detecting circuit
At damage；
Clipping unit includes first diode D1 and the second diode D2, for limiting voltage magnitude；
Filter unit includes first capacitor C1, for being filtered to voltage signal.
The level signal that the shaping circuit 11 of the present embodiment is used to flow through in load circuit carries out Shape correction, specific to wrap
Current limliting processing, amplitude limiting processing and filtering processing are included, there is no it when so that signal being sent to control module in level signal
His impurity can be identified clearly by corresponding controller, to improve the accuracy of detection.
Specifically, attached drawing 5, the load detecting circuit are please referred to further include:
Circuit 20 is protected, the protection circuit 20 is connected between the control terminal and control module 30 of the silicon-controlled T, is used
In preventing driving voltage from damaging to the silicon-controlled T；
The protection circuit 20 includes 3rd resistor R3 and the second capacitor C2, one end of the second capacitor C2 and described the
The other end of three resistance R3 connects, and the other end of the second capacitor C2 is connect with the control terminal of the silicon-controlled T, the third
One end of resistance R3 connects the control module 30.
Specifically, attached drawing 6, the load detecting circuit are please referred to further include:
Capacitance-resistance voltage reduction circuit 50, the capacitance-resistance voltage reduction circuit 50 is connect with the other end of the load L, for believing power supply
It number is depressured, pressure stabilizing and filtering processing；
The capacitance-resistance voltage reduction circuit 50 includes the 4th resistance R4, third capacitor C3, the 5th diode D5, zener diode D6
And electrolytic capacitor C4；One end of the 4th resistance R4 is connect with power input, and the one of the other end and the third capacitor C3
The anode of end connection, the other end of the third capacitor C3 and the cathode of the zener diode D6 and the 5th diode D5 are even
It connects, the plus earth of the zener diode D6, the cathode of the 5th diode D5 and the anode of the electrolytic capacitor C4 connect
It connects, the anode access forward voltage of the electrolytic capacitor C4, the cathode ground connection of the electrolytic capacitor C4.
Specifically, the load detecting circuit further include:
Zero cross detection circuit 40, the other end and the control module of the zero cross detection circuit 40 with the load L
30 connections, for carrying out zero passage detection to power supply signal, and the zero cross signal that will acquire is sent to control module 30；
The zero cross detection circuit includes 3rd resistor R3, third diode D3 and the 4th diode D4；The third
One end of resistance R3 is connect with power input, the cathode of the other end of the 3rd resistor R3 and the third diode D3 with
And the 4th diode D4 anode connection, the third diode D3 plus earth, the anode of the 4th diode D4 and institute
The connection of control module 30 is stated, the cathode of the 4th diode D4 accesses forward voltage.
In the present embodiment, the setting sample circuit mode in parallel with the load accesses load circuit, is to open in load
It will not make load detecting circuit and silicon-controlled one end hanging when road, and level letter can be provided for load detecting circuit
Number so that the silicon-controlled working condition of detection is detectable, caused by avoiding because of load open circuit load detecting circuit with can
The one end for controlling silicon vacantly makes load circuit be this security risk of nondeterministic statement, improves whole security performance.
The a kind of electronic equipment that the embodiment of the present invention also provides, comprising:
Shell；And
Load detecting circuit as the aforementioned, the load detecting circuit are set in the shell.
Since the embodiment and above-mentioned each embodiment are to be based on same design, under the premise of content does not conflict mutually,
The content of the embodiment can quote above-mentioned each embodiment, and this will not be repeated here.
Load circuit detection method in above-mentioned corresponding embodiment of the method can be performed in the electronic equipment, has execution method phase
The functional module and beneficial effect answered.The technical detail of detailed description not in electronic equipment embodiment, reference can be made to above-mentioned correspondence
Embodiment of the method in load circuit detection method.
The apparatus embodiments described above are merely exemplary, wherein described, unit can as illustrated by the separation member
It is physically separated with being or may not be, component shown as a unit may or may not be physics list
Member, it can it is in one place, or may be distributed over multiple network units.It can be selected according to the actual needs
In some or all of the modules achieve the purpose of the solution of this embodiment.
By the description of above embodiment, those of ordinary skill in the art can be understood that each embodiment can borrow
Help software that the mode of general hardware platform is added to realize, naturally it is also possible to pass through hardware.Those of ordinary skill in the art can manage
All or part of the process in the solution realization embodiment method is can be by the relevant hardware of computer program instructions come complete
At the program can be stored in computer-readable storage medium, and the program is when being executed, it may include such as each method
Embodiment process.Wherein, the storage medium can be magnetic disk, CD, read-only memory (Read-Only
Memory, ROM) or random access memory (Random Access Memory, RAM) etc..
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；At this
It under the thinking of invention, can also be combined between the technical characteristic in above embodiments or different embodiment, step can be with
It is realized with random order, and there are many other variations of different aspect present invention as described above, for simplicity, they do not have
Have and is provided in details；Although the present invention is described in detail referring to the foregoing embodiments, the ordinary skill people of this field
Member is it is understood that it is still possible to modify the technical solutions described in the foregoing embodiments, or to part of skill
Art feature is equivalently replaced；And these are modified or replaceed, each reality of the present invention that it does not separate the essence of the corresponding technical solution
Apply the range of a technical solution.
Claims (13)
1. a kind of load circuit detection method, is applied to load detecting circuit, the load detecting circuit loads back for detecting
The working condition on road, the load circuit include silicon-controlled and load, and the described silicon-controlled and load connects, and feature exists
In, which comprises
To the silicon-controlled transmission driving signal, the driving signal is used to indicate the silicon-controlled work on state or cuts
Only state；
The level signal for obtaining the load current of the load detecting circuit sampling and being converted by the load current, it is described
Load current includes that sampling flows through the first electric current of the load or do not flow through the load and flow through the load detecting circuit
The second electric current, second electric current be less than the silicon-controlled maintenance electric current；
According to the driving signal and the level signal, the working condition of the described silicon-controlled or described load is determined.
2. load circuit detection method according to claim 1, it is characterised in that: described according to the driving signal and institute
Level signal is stated, determines the silicon-controlled working condition, comprising:
The silicon-controlled work is used to indicate in off state in the driving signal, according to the level class of the level signal
Type determines the silicon-controlled working condition.
3. load circuit detection method according to claim 2, which is characterized in that the electricity according to the level signal
Flat type determines the silicon-controlled working condition, comprising:
It is described silicon-controlled for normal condition when the level signal is periodic low and high level；
It is described silicon-controlled for breakdown conditions or short-circuit condition when the level signal is lasting low level.
4. load circuit detection method according to claim 3, it is characterised in that: when it is described it is silicon-controlled be normal condition,
It is described according to the driving signal and the level signal, determine the working condition of the load, comprising:
When the driving signal is used to indicate the silicon-controlled work on state, and the level signal is periodical height
When level, the load is open-circuit condition；
When the driving signal is used to indicate the silicon-controlled work on state, and the level signal is the low electricity of duration
Usually, the load is normal condition.
5. load circuit detection method according to claim 1, it is characterised in that: driven described to the silicon-controlled transmission
Before dynamic signal, comprising:
Obtain the zero cross signal of power supply；
According to the zero cross signal, setting sends the time of the silicon-controlled driving signal.
6. a kind of load detecting circuit, for detecting the working condition of load circuit, the load circuit include it is silicon-controlled with it is negative
It carries, the silicon-controlled connection with the load, which is characterized in that the load detecting circuit includes:
Sampling module, the sampling module and the load connect, for sampling load current and turning the load current
Change level signal into, the load current includes that sampling flows through the first electric current of the load or do not flow through the load and flow through
Second electric current of the load detecting circuit, second electric current are less than the silicon-controlled maintenance electric current；
Control module, the control module and the sampling module and silicon-controlled connection；
Wherein, the control module includes:
At least one processor；And
The memory being connect at least one described processor communication；Wherein, be stored with can be by described at least one for the memory
The instruction that a processor executes, described instruction is executed by least one described processor, so that at least one described processor energy
It is enough in execution such as load circuit detection method described in any one of claim 1 to 5.
7. load detecting circuit according to claim 6, it is characterised in that:
The sampling module includes: the sample circuit in parallel with the load, and with the sample circuit and the control mould
The shaping circuit of block connection；
The sample circuit is used to sample the load current in the load circuit；
The shaping circuit is used to the load current being converted into level signal.
8. load detecting circuit according to claim 7, it is characterised in that: the sample circuit includes: first resistor, institute
The one end for stating first resistor connect with the other end of the load and accesses power supply, and the other end of the first resistor is born with described
One end of load connects.
9. load detecting circuit according to claim 7, it is characterised in that: the shaping circuit includes: second resistance,
One diode, the second diode and first capacitor；
One end of the second resistance is connect with one end of the load, the other end of the second resistance and the one or two pole
The anode connection of the cathode of pipe and second diode, the plus earth of the first diode, second diode
Cathode access forward voltage, one end of the first capacitor connect with the other end of the control module and second resistance,
The other end of the first capacitor is grounded.
10. load detecting circuit according to claim 6, it is characterised in that: the load detecting circuit further include:
Circuit is protected, the protection is electrically connected between the silicon-controlled control terminal and control module, drives for preventing
Voltage silicon-controlled is damaged to described；
The protection circuit includes 3rd resistor and the second capacitor, and one end of second capacitor is another with the 3rd resistor
End connection, the other end of second capacitor are connect with the silicon-controlled control terminal, and one end of the 3rd resistor connects institute
State control module.
11. load detecting circuit according to claim 6, it is characterised in that: the load detecting circuit further include:
Capacitance-resistance voltage reduction circuit, the capacitance-resistance voltage reduction circuit are connect with the other end of the load, for dropping to power supply signal
Pressure, pressure stabilizing and filtering processing；
The capacitance-resistance voltage reduction circuit includes the 4th resistance, third capacitor, the 5th diode, zener diode and electrolytic capacitor；Institute
The one end for stating the 4th resistance is connect with power input, and the other end of the 4th resistance and one end of the third capacitor connect
It connects, the other end of the third capacitor is connect with the anode of the cathode of the zener diode and the 5th diode, described steady
The plus earth of diode is pressed, the cathode of the 5th diode is connect with the anode of the electrolytic capacitor, the electrolytic capacitor
Anode access forward voltage, the electrolytic capacitor cathode ground connection.
12. load detecting circuit according to claim 6, it is characterised in that: the load detecting circuit further include:
Zero cross detection circuit, the zero cross detection circuit connect with the other end of the load and the control module, are used for
Zero passage detection is carried out to power supply signal, and the zero cross signal that will acquire is sent to the control module；
The zero cross detection circuit includes 3rd resistor, third diode and the 4th diode；One end of the 3rd resistor
It is connect with power input, the cathode and the 4th diode of the other end of the 3rd resistor and the third diode are just
Pole connection, the third diode cathode ground connection, the anode of the 4th diode are connect with the control module, and the described 4th
The cathode of diode accesses forward voltage.
13. a kind of electronic equipment characterized by comprising
Shell；And
Such as the described in any item load detecting circuits of claim 6 to 12, the load detecting circuit is set in the shell.
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| CN201811339856.6A CN109406989B (en) | 2018-11-12 | 2018-11-12 | Load loop detection method, load detection circuit and electronic equipment |
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|---|---|---|---|
| CN201811339856.6A CN109406989B (en) | 2018-11-12 | 2018-11-12 | Load loop detection method, load detection circuit and electronic equipment |
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| CN109406989A true CN109406989A (en) | 2019-03-01 |
| CN109406989B CN109406989B (en) | 2024-04-16 |
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| CN110113037A (en) * | 2019-05-27 | 2019-08-09 | 深圳和而泰小家电智能科技有限公司 | Super-zero control circuit and electronic equipment |
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| CN110988571A (en) * | 2019-12-27 | 2020-04-10 | 昂宝电子（上海）有限公司 | Load insertion detection circuit, system and method |
| CN111736009A (en) * | 2020-07-21 | 2020-10-02 | 追创科技(苏州)有限公司 | Zero-crossing detection circuit and electronic equipment |
| CN113740765A (en) * | 2021-09-03 | 2021-12-03 | 赛尔富电子有限公司 | Short circuit detection circuit |
| CN114397833A (en) * | 2021-12-01 | 2022-04-26 | 深圳市联洲国际技术有限公司 | Load self-adaptive silicon controlled rectifier circuit and control method |
| CN114488993A (en) * | 2021-12-20 | 2022-05-13 | 上海华兴数字科技有限公司 | Circuit state detection device and method |
| CN114397833B (en) * | 2021-12-01 | 2024-05-03 | 深圳市联洲国际技术有限公司 | Load self-adaptive silicon controlled rectifier circuit and control method |
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| CN110113037A (en) * | 2019-05-27 | 2019-08-09 | 深圳和而泰小家电智能科技有限公司 | Super-zero control circuit and electronic equipment |
| CN110568290A (en) * | 2019-09-18 | 2019-12-13 | 山东省计算中心（国家超级计算济南中心） | Real-time monitoring device for load working state of sound masking system under multi-load condition |
| CN110988571A (en) * | 2019-12-27 | 2020-04-10 | 昂宝电子（上海）有限公司 | Load insertion detection circuit, system and method |
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| CN114397833A (en) * | 2021-12-01 | 2022-04-26 | 深圳市联洲国际技术有限公司 | Load self-adaptive silicon controlled rectifier circuit and control method |
| CN114397833B (en) * | 2021-12-01 | 2024-05-03 | 深圳市联洲国际技术有限公司 | Load self-adaptive silicon controlled rectifier circuit and control method |
| CN114488993A (en) * | 2021-12-20 | 2022-05-13 | 上海华兴数字科技有限公司 | Circuit state detection device and method |
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