CN109405990A - A kind of system for detecting temperature - Google Patents
A kind of system for detecting temperature Download PDFInfo
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- CN109405990A CN109405990A CN201811428808.4A CN201811428808A CN109405990A CN 109405990 A CN109405990 A CN 109405990A CN 201811428808 A CN201811428808 A CN 201811428808A CN 109405990 A CN109405990 A CN 109405990A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
- G01K7/226—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor using microstructures, e.g. silicon spreading resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/20—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2215/00—Details concerning sensor power supply
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The invention discloses a kind of system for detecting temperature, and the system comprises sensing module, communication module, data module and display modules；Wherein, the sensing module includes temperature sensor and edge calculations module connected to it, for realizing temperature measurement；The communication module, for the temperature measuring data of the sensing module to be wirelessly transmitted to the data module；The data module, for receiving temperature measuring data；The display module, display and processing for the temperature measuring data.The system for detecting temperature realizes the precise measurement of temperature data, and uses failed transmission, and structure is simple, is easy to arrange, so that the versatility of the system is stronger.
Description
Technical field
The invention belongs to field of temperature measurement, in particular to a kind of system for detecting temperature.
Background technique
Existing temp measuring system surface acoustic wave wireless and passive temp measuring system, optical fiber temperature measurement system, infrared radiation thermometer and red
Outer thermal imaging system.But the switchgear of this high voltage of such as high-tension switch cabinet, high current, internal structure is complicated, is opened with KYN
For closing cabinet, serious heat generating spot is distributed at contact of breaker, the optical fiber temperature measurement system temperature measuring equipment wired as one, nothing
Method detects the temperature at contact of breaker by lead；It is same because of switch further to surface acoustic wave temperature monitoring system
Complicated system inside cabinet, signal is extremely faint after surface acoustic wave signal carries out multipath reflection in cabinet, and simultaneously in installation day
When line, need to debug for a long time；And during the test, the phenomenon that similarly will appear signal interruption.
Summary of the invention
For the above-mentioned technical problems in the prior art, the present invention provides a kind of system for detecting temperature.The present invention
System for detecting temperature structure it is simple, be easy to arrange, it is versatile.
The purpose of the present invention is to provide a kind of system for detecting temperature, and the system comprises sensing module, communication module, numbers
According to module and display module；Wherein,
The sensing module includes temperature sensor and edge calculations module connected to it, for realizing temperature survey
Amount；
The communication module, for the temperature measuring data of the sensing module to be wirelessly transmitted to the data module；
The data module, for receiving temperature measuring data；
The display module, display and processing for the temperature measuring data.
Further, the temperature sensor uses silicon microbridge double membrane structure, and is produced in SOI device, and upper layer is
Metallic aluminum, lower layer are the top layer silicon of SOI device；Wherein,
The varistor of preset resistive value is formed by ion implantation technology in the top layer silicon, and in the top layer silicon
Splash-proofing sputtering metal aluminium；
It is hanging below the silicon microbridge double membrane structure, and be not connected with the substrate silicon of the SOI device.
Further, the temperature sensor further includes three fixed value resistances, wherein
Three fixed value resistances are located on SOI device layer, and not hanging below the fixed value resistance, and pass through electrical lead
Wheatstone bridge is formed with the varistor.
Further, the edge calculations module, for being hindered based on the varistor resistance value, three fixed value resistances
Value, the thickness of detection circuit electric current, the metallic aluminum and top layer silicon, thermal expansion coefficient, elasticity modulus and due to temperature become
Change, the piezoresistance coefficient and stress that the top layer silicon vertical and horizontal generate calculate the output voltage of the Wheatstone bridge.
Further, the edge calculations module is also used to the output voltage based on the Wheatstone bridge, obtains temperature measurement
Data.
Further, the communication module includes local communication module and/or wide-area communication module, wherein
The local communication module is connected with the edge calculations module with wide-area communication module, measures for temperature
The wireless transmission of data.
System for detecting temperature of the invention is the temp measuring system of the formation complete set based on temperature sensor, for realizing
To power equipment, for example, switchgear overheating detection, to reduce in electric system because of switchgear mistake caused by temperature rise
Thermal fault.System for detecting temperature based on temperature sensor realizes the wireless transmission of data, can apply to such as withdraw-type switch
The temperature online measurement and the transmission of measurement result in narrow spaces region, are transferred to the data of monitoring room in the stationary contact head cartridge of cabinet etc.
By the available state of temperature of algorithm evaluation, display screen or the online alarm system of triggering may be displayed on.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that understand through the implementation of the invention.The objectives and other advantages of the invention can be by specification, right
Pointed structure is achieved and obtained in claim and attached drawing.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 shows one of embodiment of the present invention system for detecting temperature framework platform schematic diagram；
Fig. 2 shows the signals of the framework of one of embodiment of the present invention system for detecting temperature detection switch cabinet temperature change
Figure；
Fig. 3 shows one of embodiment of the present invention Wheatstone bridge integrated morphology schematic diagram；
Fig. 4 shows one of embodiment of the present invention Wheatstone bridge principle schematic diagram；
Fig. 5 shows one of embodiment of the present invention communication module and display module structural schematic diagram.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical solution in the embodiment of the present invention clearly and completely illustrated, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
As shown in Figure 1, describing a kind of system for detecting temperature in the embodiment of the present invention, the system comprises sensing layer, lead to
Believe layer, data Layer and presentation layer；Wherein, the sensing layer includes one or more temperature sensors, measured for temperature,
Acquisition；The communication layers, for the temperature measuring data of the sensing layer to be transmitted to the data Layer；The data Layer is used
In reception temperature data and it is transmitted to the presentation layer；The presentation layer, display and processing for the temperature data.
In the embodiment of the present invention by taking the measurement of the temperature of high-tension switch cabinet as an example, but it is not limited to high-tension switch cabinet, other are related to
Device, equipment or the system of temperature measurement can use above-mentioned system for detecting temperature.
As shown in Fig. 2, using the temperature change at fingertip in detection switch cabinet as exemplary illustration, by the temperature sensor
On the fingertip of the switchgear.Further specifically, the sensing layer, communication layers, data Layer and presentation layer are adopted respectively
It is replaced with sensing module, communication module, data module and display module；Wherein,
The sensing module includes edge calculations module, temperature sensor, positioning time service module；Wherein, in order to obtain more
Accurate data measurement, the temperature sensor use silicon microbridge pressure resistance type MEMS (MEMS) temperature sensor.
The silicon microbridge pressure resistance type MEMS temperature sensor uses silicon microbridge double membrane structure, and upper layer is metallic aluminum, lower layer SOI
The top layer silicon of (Silicon-On-Insulator, i.e. silicon in insulating substrate) device；Wherein, in the top layer silicon by from
Sub- injection technology forms the varistor of preset resistive value, and the splash-proofing sputtering metal aluminium in the top layer silicon；The silicon microbridge duplicature
It is hanging below structure, and be not connected with the substrate silicon of the SOI device.Further, the silicon microbridge double membrane structure length
It is 500 μm, width is 50 μm, and aluminum layer thickness is 1.5 μm, and silicon layer thickness is 8 μm；The varistor is on the silicon microbridge
Width range is 10~20 μm.
As shown in figure 3, the silicon microbridge pressure resistance type MEMS temperature sensor further includes three fixed value resistance R2、R3、R4,
In, the fixed value resistance R2、R3、R4With the varistor R1Be integrated on the silicon wafer, and by electrical lead formed favour this
Logical bridge, wherein three fixed value resistances are located on SOI device layer, and not hanging below the fixed value resistance.
Further, the measurement data based on temperature sensor output, the edge calculations module is for executing operation
Obtain temperature measuring data.Specifically, the silicon microbridge is movable structure, bending is generated when the silicon microbridge thermally expands,
The varistor value changes, and the variation of varistor value, the pressure-sensitive electricity are further gone out by the connecting detection of circuit
Certain numerical relation is presented in the variation of resistance value and temperature change, to obtain temperature measurement；As shown in figure 4, setting electricity therein
Hinder R1To be arranged in the varistor on silicon microbridge, when environment temperature changes, double membrane structure is because of thermal expansion coefficient
Difference can generate stress, resistance R1Because the variation of △ R, then, the output voltage U of the Wheatstone bridge occur for piezoresistive effect resistance value0
Are as follows:
Wherein, R1' it is R1Resistance value after varying with temperature, under initial temperature, resistance R1=R2=R3=R4=R, then:
Wherein, ignore the size of Δ R, then:
Wherein, R2、R3、R4For fixed value resistance, I is detection circuit electric current, t1For aluminium (Al) thickness degree, γ1It is swollen for Al layers of heat
Swollen coefficient, E1For Al layers of elasticity modulus；t2For top layer silicon thickness, γ2For top layer silicon thermal expansion coefficient, E2For top layer silicon springform
Amount.If the temperature of double membrane structure is T under original state0, when temperature becomes T, by temperature change, the top layer silicon is longitudinally produced
Raw piezoresistance coefficient and stress is πl、σ1, the piezoresistance coefficient and stress that the top layer silicon laterally generates are πt、σt；
Pass through voltage value U0Obtain corresponding temperature data, it is preferable that by the voltage value in matlab into
Row calculates.
The communication module includes local communication module and/or wide-area communication module, the local communication module and wide area
Communication module is connected with the edge calculations module, the wireless transmission for temperature measuring data.
As shown in figure 5, the data module uses database, for receiving the temperature number of current data and sensing module
According to；Wherein the current data is by the electric current that is connected in switchgear in switchgear detection process；Preferably, according to the temperature
Detection system detects the power grid, then the current data can be obtained from power supply bureau；Further, the current data packet
Include time & amplitude (t&A)；The temperature data includes time & temperature (t&T).
As shown in figure 5, the display module includes that multiple data show submodule, the data show that submodule includes temperature
It writes music wire module, historical query module, limit value setup module, multi-tiled display module, overload alarm module, log statistic mould
Maximum current module, maintenance front and back parameter comparison module when block, limitation data-mining module, temperature rise allow.Wherein, the displaying
Module receives the current data and temperature data of database transmissions, and the display module and the database limit the temperature
Value (T) is interacted with current limit (A), that is, the display module obtains the temperature limit (T) and electricity from the database
Restriction value (A), and the temperature limit (T) and current limit (A) can be set by the display module, and be stored in
Database.
In this implementation, as shown in Fig. 2, the system for detecting temperature further includes the energy supply being connected with the sensor module
Module, wherein the power module includes Power Management Unit, and the Power Management Unit is connected with the edge calculations module
It connects, for being powered to the edge calculations module.Further, the power management module is also connected with bridge rectifier
With battery, it to be used for self-energizing power supply power supply.Wherein, the bridge rectifier realizes the confession to Power Management Unit by coil
Electricity, the Power Management Unit are also connected with battery to which when coil can not power, the battery executes power supply, to ensure
The normal work of entire system for detecting temperature.
In the present embodiment, the communication layers can also use repeater, and the repeater believes the temperature measuring data
It number is forwarded on the server of the data Layer.Further, the presentation layer includes computer or mobile phone terminal
A kind of production method of temperature sensor is also described in the embodiment of the present invention, throws the surface of SOI device in p-type list
Silicon microbridge double membrane structure is formed, specifically includes the following steps:
(1) PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhancing are used
Vapour deposition process) technique accumulation SiO2(silica), the SiO of accumulation2With a thickness of 20nm；
(2) P- ion implanting is formed in the top layer silicon of p-type SOI device by varistor using ion implantation technology；
(3) P+ ion implanting varistor is formed by ohmic contact regions using ion implantation technology；
(4) SiO is etched using wet-etching technology2Contact hole is formed on the basis of the ohmic contact regions, and sputters 1
μm aluminium layer；
(5) pecvd process accumulation SiO is used2Form 200nm passivation layer；
(7) SiO is etched using RIE (Reactive Ion Etching, reactive ion etching) technique2In the contact hole
Upper etch media layer；
(8) silicon microbridge is successively formed using anisotropic etching, isotropic etching technique；Wherein, the anisotropy
Etching includes etching SiO using RIE technique2(Deep Reactive Ion Etching, deep reactive ion are carved with DRIE is used
Erosion) technique etching top layer silicon；The isotropic etching is to perform etching to the substrate silicon of SOI device.
Mask plate is all made of in step (1)-(8), and the mask plate that the step (2)-step (8) uses is with institute
The mask plate in step (1) is stated to be placed for reference.
The step (4) further includes forming insulating layer using pecvd process before forming the contact hole.
The temperature sensor is silicon microbridge pressure resistance type MEMS temperature sensor.
Although the present invention is described in detail referring to the foregoing embodiments, those skilled in the art should manage
Solution: it is still possible to modify the technical solutions described in the foregoing embodiments, or to part of technical characteristic into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The spirit and scope of scheme.
Claims (6)
1. a kind of system for detecting temperature, which is characterized in that the system comprises sensing module, communication module, data module and
Display module；Wherein,
The sensing module includes temperature sensor and edge calculations module connected to it, for realizing temperature measurement；
The communication module, for the temperature measuring data of the sensing module to be wirelessly transmitted to the data module；
The data module, for receiving temperature measuring data；
The display module, display and processing for the temperature measuring data.
2. system for detecting temperature according to claim 1, which is characterized in that the temperature sensor is double-deck using silicon microbridge
Membrane structure, and be produced in SOI device, and upper layer is metallic aluminum, lower layer is the top layer silicon of SOI device；Wherein,
The varistor of preset resistive value is formed by ion implantation technology in the top layer silicon, and is sputtered in the top layer silicon
Metallic aluminium；
It is hanging below the silicon microbridge double membrane structure, and be not connected with the substrate silicon of the SOI device.
3. system for detecting temperature according to claim 2, which is characterized in that the temperature sensor further includes three definite values
Resistance, wherein
Three fixed value resistances are located on SOI device layer, and not hanging below the fixed value resistance, and pass through electrical lead and institute
It states varistor and forms Wheatstone bridge.
4. system for detecting temperature according to claim 3, which is characterized in that the edge calculations module, for being based on institute
State varistor resistance value, three fixed value resistance resistance values, detection circuit electric current, the metallic aluminum and top layer silicon thickness,
Thermal expansion coefficient, elasticity modulus and due to temperature change, the piezoresistance coefficient that the top layer silicon vertical and horizontal generate with answer
Power calculates the output voltage of the Wheatstone bridge.
5. system for detecting temperature according to claim 4, which is characterized in that the edge calculations module is also used to based on institute
The output voltage of Wheatstone bridge is stated, temperature measuring data is obtained.
6. system for detecting temperature according to claim 1, which is characterized in that the communication module includes local communication module
And/or wide-area communication module, wherein
The local communication module is connected with the edge calculations module with wide-area communication module, is used for temperature measuring data
Wireless transmission.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811428808.4A CN109405990A (en) | 2018-11-27 | 2018-11-27 | A kind of system for detecting temperature |
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| CN201811428808.4A CN109405990A (en) | 2018-11-27 | 2018-11-27 | A kind of system for detecting temperature |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111024248A (en) * | 2019-12-30 | 2020-04-17 | 戴天智能科技（上海）有限公司 | Data acquisition and temperature measurement sending terminal with edge computing capability |
| CN112150924A (en) * | 2020-09-24 | 2020-12-29 | 厦门天马微电子有限公司 | Display device |
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| JPH04290938A (en) * | 1991-03-19 | 1992-10-15 | Mazda Motor Corp | Pressure sensing device |
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| CN112150924A (en) * | 2020-09-24 | 2020-12-29 | 厦门天马微电子有限公司 | Display device |
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