CN109396962A - Attenuated polishing mold and method for high-aspect-ratio infrared focal plane detector - Google Patents
Attenuated polishing mold and method for high-aspect-ratio infrared focal plane detector Download PDFInfo
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- CN109396962A CN109396962A CN201811176473.1A CN201811176473A CN109396962A CN 109396962 A CN109396962 A CN 109396962A CN 201811176473 A CN201811176473 A CN 201811176473A CN 109396962 A CN109396962 A CN 109396962A
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- detector
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- focal plane
- infrared focal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Light Receiving Elements (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a kind of attenuated polishing mold and method for high-aspect-ratio infrared focal plane detector, mold includes: notched fixture substrate, electrode protection liner, altimetric compensation gasket and chip protection liner.Its application method are as follows: electrode protection liner is pasted on to the reading circuit protruding parts of photosensor chip two sides；Infrared focal plane detector and altimetric compensation gasket are individually fixed in the center and groove of fixture substrate；Chip protection liner is fixed on altimetric compensation gasket center；Attenuated polishing is carried out to infrared focal plane detector under this structure.The present invention has the advantages that 1. solve the problems, such as high-aspect-ratio focus planar detector during mechanical reduction easy fragmentation, it can be achieved that hundred micron dimensions be thinned；2. thickness thinning can be controlled accurately, and guarantee that detector surface has good flatness after being thinned；The decline of therefore caused detector performance is avoided to detector bring physical damnification 3. significantly reducing in thinning process.
Description
Technical field
The present invention relates to semiconductor chip manufacturing technology fields, and in particular to is used for high-aspect-ratio infrared focal plane detector
Attenuated polishing mold and method, suitable for 15~40mm of length, length-width ratio 2~6,800~1400 μm of thickness comprising read
The attenuated polishing of the infrared focal plane detector of circuit, interconnection layer and photosensor chip, and can be realized to high-aspect-ratio
Infrared focal plane detector carry out thin substrate, high-precision, low damage attenuated polishing.
Background technique
Infrared focal plane detector is usually made of infrared photosensor chip, interconnection layer and reading circuit three parts, according to light
The spread pattern of photosensitive member can be divided into alignment and face two kinds of structures of battle array in quick chip, can be respectively used to scan and stare infrared system
System.The appearance of infrared focus plane brings revolutionary variation to infrared system: simplifying or even eliminate optical mechaical scanning system；Cause
The increase of photosensitive member quantity, the performance indicators such as resolution ratio, sensitivity, response speed, reliability of system are greatly enhanced.Cause
This, infrared focal plane detector has important need in fields such as space remote sensing, lll night vision, military surveillance, space astronomies, and
By various countries great attention and greatly develop.Currently, infrared focal plane detector is just sent out towards extensive, integrated direction
Exhibition, it is therefore desirable to it is appropriate to detector progress to be thinned, to reduce detector size, reduce weight and refrigeration power consumption, thus full
The demand that the more aspects of foot are applied.
Currently, for infrared focal plane detector common thining method be mechanical lapping and CMP process,
Detector is carried out using mechanical abrasive action and chemical reagent corrosiveness thinned.In thinning process, need to make to be saturated with to polish
The angular speed that the polishing disk of liquid keeps certain is rotated, and carries out detector fixture with fixed angular speed in the same direction
Rotation, so face to be thinned can obtain uniformly covering for polishing fluid while detector is pressed on polishing disk with appropriate pressure
Lid, to form the polishing fluid film being made of abrasive grains and chemical reagent between polishing disk and detector.In detector
In rotation process, mechanical lapping and chemical oxidation effect will occur simultaneously, to realize the attenuated polishing of detector.
But with the continuous increase of infrared focal plane detector scale, size and length-width ratio are also being gradually increased, this is just
New challenge is brought to attenuated polishing technology.Meanwhile in order to reduce the operation difficulty of following process and widen application range,
Mainly carried out using detector module in the form of it is thinned, and traditional handicraft to such detector be thinned when, due to length-width ratio with
The increase of scale, it is difficult to guarantee detector horizontal rotation and surface uniform force, therefore during mechanical spin finishing usually
Larger physical damnification can be introduced, while being difficult to accurately control thickness thinning and surface polishing degree, after being thinned
The performance of detector declines.Therefore, attenuated polishing mold and side of the research for high-aspect-ratio infrared focal plane detector
Method has very important practical application value.
Summary of the invention
For the problems of traditional infrared focus planar detector attenuated polishing technique mentioned above and growth requirement,
The innovative attenuated polishing mold and method proposed for high-aspect-ratio infrared focal plane detector of the invention.
The present invention is that structure and technological improvement are carried out on traditional infrared focus planar detector attenuated polishing Process ba- sis, first
Electrode protection liner is first increased, prevents the electrode on reading circuit to be damaged during attenuated polishing, influences its electric property；
Secondly realize attenuated polishing in the process to the guarantor of photosensor chip by the way of altimetric compensation gasket and chip protection liner combination
Shield, and the accurate control to thickness thinning and thinned surface evenness, to reduce attenuated polishing technique to photosensor chip
The influence of energy；Furthermore groove is carved on fixture substrate, so that altimetric compensation gasket is embedded, when further increasing thinned
The stability of liner guarantees reduction process quality.
Side structure schematic diagram of the invention as shown in Figure 1, overlooking structure diagram as shown in Fig. 2, it by fixture substrate
1, reading circuit 2, interconnection layer 3, photosensor chip 4, electrode protection liner 5, altimetric compensation gasket 6 and chip protection liner 7 form.
Reading circuit 2, interconnection layer 3 and photosensor chip 4 therein are solidified by injecting low temperature glue in interconnection layer 3, form detection
Device is whole, and then the 2 protruding parts adhesive electrode of reading circuit with photoresist in 4 two sides of photosensor chip protects liner 5, then uses stone
Detector and altimetric compensation gasket 6 are fixed in the center and groove of fixture substrate 1 by wax respectively, are finally protected chip with paraffin
Shield liner 7 is fixed on the upper face center of altimetric compensation gasket 6.
Critical process step according to the present invention is as shown in Fig. 3,1) fill adhesive curing, 2) adhesive electrode protects liner,
3) fixed detector, 4) fixed height compensation gasket, 5) fixed chip protection liner, 6) rough polishing, 7) essence throwing, 8) it samples and cleans.
Steps are as follows for concrete technology flow process:
1 fills adhesive curing, DW-3 epoxy type adhesive is filled in interconnection layer 3, at room temperature solidification~72h；
2 adhesive electrodes protect liner, and electrode protection liner 5 is pasted on to the reading electricity of 4 two sides of photosensor chip with photoresist
2 protruding parts of road is horizontally arranged, 65 DEG C of hot baking~5h；
Infrared focal plane detector is fixed on the center of fixture substrate 1 with paraffin by 3 fixed detectors；
4 fixed heights compensate gasket, and altimetric compensation gasket 6 is fixed in the groove of fixture substrate 1 with paraffin；
5 fixed chips protect liner, and chip protection liner 7 is fixed in the upper surface of altimetric compensation gasket 6 with paraffin
Centre, is then placed in 20 DEG C of thermal station cooling~5min for fixture substrate 1；
6 rough polishings carry out substep rough polishing, are thinned 20-550 μm, rough polishing condition are as follows: pressure 0.1-0.4kg/cm2, revolving speed 40-
80r/min；
7 essences are thrown, and are carried out a step essence and are thrown, are thinned 5-20 μm, smart throwing condition are as follows: pressure 0.2-0.5kg/cm2, revolving speed 50-
90r/min；
8 sampling cleanings, 75 DEG C of hot plate heated jig substrates 1 are sampled, and successively use trichloro ethylene, acetone and second later
Alcohol cleans detector；
The present invention has the advantages that
A. it can effectively solve the problems, such as easy fragmentation of high-aspect-ratio focus planar detector during mechanical reduction, reduce and be thinned
In the process to detector bring physical damnification；
B. guarantee that detector surface has good flatness after being thinned；
C. the thickness thinning of applicable hundred micron dimension, and can be realized accurate control.
Detailed description of the invention
Fig. 1 is side structure schematic diagram of the invention.
Fig. 2 is overlooking structure diagram of the invention.
Fig. 3 is attenuated polishing process flow chart of the invention.
In figure:
1 --- fixture substrate；
2 --- reading circuit；
3 --- interconnection layer；
4 --- photosensor chip；
5 --- electrode protection liner；
6 --- altimetric compensation gasket；
7 --- chip protects liner.
Specific embodiment
Below in conjunction with attached drawing and specific embodiment, the present invention is described further, but not as limit of the invention
It is fixed.
Embodiment one:
1 fills adhesive curing, DW-3 epoxy type adhesive is filled in interconnection layer 3, at room temperature solidification~72h；
2 adhesive electrodes protect liner, and electrode protection liner 5 is pasted on to the reading electricity of 4 two sides of photosensor chip with photoresist
2 protruding parts of road, the material of electrode protection liner 5 are indium phosphide, having a size of 15.5mm × 0.6mm × 0.35mm, are horizontally arranged,
65 DEG C of hot baking~5h；
Infrared focal plane detector is fixed on 1 center of fixture substrate with paraffin, having a size of 31.4mm by 3 fixed detectors
× 5.5mm × 1.07mm, wherein photosensor chip 4 is with a thickness of 0.33mm；
4 fixed heights compensate gasket, altimetric compensation gasket 6 are fixed in the groove of fixture substrate 1 with paraffin, concave
Slot is having a size of 30.5mm × 5.5mm × 0.1mm, and altimetric compensation gasket 6 is having a size of 30mm × 5mm × 0.85mm；
5 fixed chips protect liner, and chip protection liner 7 is fixed in the upper surface of altimetric compensation gasket 6 with paraffin
Then fixture substrate 1 is placed in 20 DEG C of controls having a size of 29mm × 4mm × 0.36mm for indium phosphide by centre, chip protection liner material
Warm platform cooling~5min；
6 rough polishings carry out substep rough polishing, 200 μm are thinned altogether, rough polishing condition are as follows: pressure 0.2kg/cm2, revolving speed 60r/min；
7 essences are thrown, and are carried out a step essence and are thrown, 5 μm are thinned altogether, smart throwing condition are as follows: pressure 0.3kg/cm2, revolving speed 70r/min；
8 sampling cleanings, 75 DEG C of hot plate heated jig substrates 1 are sampled, and successively use trichloro ethylene, acetone and second later
Alcohol cleans detector；
Embodiment two:
1 fills adhesive curing, DW-3 epoxy type adhesive is filled in interconnection layer 3, at room temperature solidification~72h；
2 adhesive electrodes protect liner, and electrode protection liner 5 is pasted on to the reading electricity of 4 two sides of photosensor chip with photoresist
2 protruding parts of road, the material of electrode protection liner 5 are indium phosphide, having a size of 14.5mm × 1mm × 0.36mm, are horizontally arranged, 65
DEG C hot baking~5h；
Infrared focal plane detector is fixed on 1 center of fixture substrate with paraffin by 3 fixed detectors, having a size of 30mm ×
9.2mm × 0.81mm, wherein photosensor chip 4 is with a thickness of 0.35mm；
4 fixed heights compensate gasket, altimetric compensation gasket 6 are fixed in the groove of fixture substrate 1 with paraffin, concave
Slot is having a size of 29.5mm × 8.5mm × 0.1mm, and altimetric compensation gasket 6 is having a size of 29mm × 8mm × 0.59mm；
5 fixed chips protect liner, and chip protection liner 7 is fixed in the upper surface of altimetric compensation gasket 6 with paraffin
Then fixture substrate 1 is placed in 20 DEG C of controls having a size of 28mm × 7mm × 0.37mm for indium phosphide by centre, chip protection liner material
Warm platform cooling~5min；
6 rough polishings carry out substep rough polishing, 30 μm are thinned altogether, rough polishing condition are as follows: pressure 0.15kg/cm2, revolving speed 50r/min；
7 essences are thrown, and are carried out a step essence and are thrown, 10 μm are thinned altogether, smart throwing condition are as follows: pressure 0.25kg/cm2, revolving speed 80r/min；
8 sampling cleanings, 75 DEG C of hot plate heated jig substrates 1 are sampled, and successively use trichloro ethylene, acetone and second later
Alcohol cleans detector；
Embodiment three:
1 fills adhesive curing, DW-3 epoxy type adhesive is filled in interconnection layer 3, at room temperature solidification~72h；
2 adhesive electrodes protect liner, and electrode protection liner 5 is pasted on to the reading electricity of 4 two sides of photosensor chip with photoresist
2 protruding parts of road, the material of electrode protection liner 5 are mercury cadmium telluride, having a size of 8mm × 1.2mm × 0.36mm, are horizontally arranged, 65
DEG C hot baking~5h；
Infrared focal plane detector is fixed on fixture substrate center with paraffin by 3 fixed detectors, having a size of 16.2mm ×
5.4mm × 0.83mm, wherein photosensor chip 4 is with a thickness of 0.35mm；
4 fixed heights compensate gasket, altimetric compensation gasket 6 are fixed in the groove of fixture substrate 1 with paraffin, concave
Slot is having a size of 15.5mm × 5.5mm × 0.1mm, and altimetric compensation gasket 6 is having a size of 15mm × 5mm × 0.59mm；
5 fixed chips protect liner, and chip protection liner 7 is fixed in the upper surface of altimetric compensation gasket 6 with paraffin
Then fixture substrate 1 is placed in 20 DEG C of controls having a size of 14mm × 4mm × 0.37mm for mercury cadmium telluride by centre, chip protection liner material
Warm platform cooling~5min；
6 rough polishings carry out substep rough polishing, 100 μm are thinned altogether, rough polishing condition are as follows: pressure 0.15kg/cm2, revolving speed 60r/min；
7 essences are thrown, and are carried out a step essence and are thrown, 10 μm are thinned altogether, smart throwing condition are as follows: pressure 0.2kg/cm2, revolving speed 80r/min；
8 sampling cleanings, 75 DEG C of hot plate heated jig substrates 1 are sampled, and successively use trichloro ethylene, acetone and second later
Alcohol cleans detector.
Claims (5)
1. a kind of attenuated polishing mold for high-aspect-ratio infrared focal plane detector, including fixture substrate (1), electrode protection
Liner (5), altimetric compensation gasket (6) and chip protection liner (7), it is characterised in that:
The electrode protection liner (5) is located at the two sides of photosensor chip (4), covers reading circuit (2) protruding parts, and pressing from both sides
Have the groove carved on substrate (1) there are four depth 0.1mm, 5.5~10.5mm of width, 20.5~30.5mm of length, each groove
Center 30mm away from fixture substrate (1), for altimetric compensation gasket (6) in groove, chip protection liner (7) is located at altimetric compensation
Gasket (6) upper face center.
2. the attenuated polishing mold according to claim 1 for high-aspect-ratio infrared focal plane detector, feature exist
In: the material of the electrode protection liner (5) is identical as photosensor chip (4) substrate material, and 300~670 μm of thickness, width
0.5~1.5mm, 10~20mm of length.
3. the attenuated polishing mold according to claim 1 for high-aspect-ratio infrared focal plane detector, feature exist
In: the material of the altimetric compensation gasket (6) be sapphire double-polished chip, 350~800 μm of thickness, 5~10mm of width, length
20~30mm.
4. the attenuated polishing mold according to claim 1 for high-aspect-ratio infrared focal plane detector, feature exist
In: the material of chip protection liner (7) is identical as photosensor chip (4) substrate material, and 330~700 μm of thickness, width 4
~9mm, 19~29mm of length.
5. a kind of based on the attenuated polishing mold according to claim 1 for high-aspect-ratio infrared focal plane detector
The thining method of detector, it is characterised in that method is as follows:
Electrode protection liner (5) is pasted on to reading circuit (2) protruding parts of photosensor chip (4) two sides；By infrared focus plane
Detector and altimetric compensation gasket (6) are individually fixed in the center and groove of fixture substrate (1)；Chip is protected into liner (7)
It is fixed on altimetric compensation gasket (6) center；Attenuated polishing is carried out to infrared focal plane detector under this structure；Concrete operations step
It is rapid as follows:
1) adhesive curing is filled, is filled with DW-3 epoxy type adhesive in interconnection layer (3), at room temperature solidification~72h；
2) adhesive electrode protects liner, and electrode protection liner (5) is pasted on to the reading electricity of photosensor chip (4) two sides with photoresist
Road (2) protruding parts is horizontally arranged, and 65 DEG C of heat dry 5h；
3) infrared focal plane detector is fixed on fixture substrate (1) center with paraffin by fixed detector；
4) fixed height compensates gasket, and altimetric compensation gasket (6) is fixed in the groove of fixture substrate (1) with paraffin；
5) fixed chip protects liner, and chip protection liner (7) is fixed in the upper surface of altimetric compensation gasket (6) with paraffin
Fixture substrate (1) is then placed in the cooling 5min of 20 DEG C of thermal stations by centre；
6) rough polishing carries out substep rough polishing, and 20~550 μm are thinned altogether；
7) essence is thrown, and is carried out a step essence and is thrown, 5~20 μm are thinned altogether；
8) sampling cleaning, 75 DEG C of hot plate heated jig substrates (1) are sampled, and successively use trichloro ethylene, acetone and second later
Alcohol cleans detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811176473.1A CN109396962B (en) | 2018-10-10 | 2018-10-10 | Thinning and polishing die and method for high-aspect-ratio infrared focal plane detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811176473.1A CN109396962B (en) | 2018-10-10 | 2018-10-10 | Thinning and polishing die and method for high-aspect-ratio infrared focal plane detector |
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| Publication Number | Publication Date |
|---|---|
| CN109396962A true CN109396962A (en) | 2019-03-01 |
| CN109396962B CN109396962B (en) | 2020-11-24 |
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| CN201811176473.1A Active CN109396962B (en) | 2018-10-10 | 2018-10-10 | Thinning and polishing die and method for high-aspect-ratio infrared focal plane detector |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265350A (en) * | 2019-06-27 | 2019-09-20 | 中国电子科技集团公司第四十四研究所 | A kind of limit for height shield jig and method for focal plane device attenuated polishing |
| CN110948294A (en) * | 2019-12-27 | 2020-04-03 | 苏州凯利昂光电科技有限公司 | Polishing method for improving polishing efficiency |
| CN112382697A (en) * | 2020-10-23 | 2021-02-19 | 中国电子科技集团公司第十一研究所 | Method for preventing infrared detector chip from cracking during thinning |
-
2018
- 2018-10-10 CN CN201811176473.1A patent/CN109396962B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265350A (en) * | 2019-06-27 | 2019-09-20 | 中国电子科技集团公司第四十四研究所 | A kind of limit for height shield jig and method for focal plane device attenuated polishing |
| CN110265350B (en) * | 2019-06-27 | 2022-03-01 | 中国电子科技集团公司第四十四研究所 | Height limiting protection clamp and method for thinning and polishing focal plane device |
| CN110948294A (en) * | 2019-12-27 | 2020-04-03 | 苏州凯利昂光电科技有限公司 | Polishing method for improving polishing efficiency |
| CN112382697A (en) * | 2020-10-23 | 2021-02-19 | 中国电子科技集团公司第十一研究所 | Method for preventing infrared detector chip from cracking during thinning |
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| CN109396962B (en) | 2020-11-24 |
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