CN109390480A - A kind of QLED device and preparation method thereof based on combination electrode - Google Patents
A kind of QLED device and preparation method thereof based on combination electrode Download PDFInfo
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- CN109390480A CN109390480A CN201710675567.2A CN201710675567A CN109390480A CN 109390480 A CN109390480 A CN 109390480A CN 201710675567 A CN201710675567 A CN 201710675567A CN 109390480 A CN109390480 A CN 109390480A
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- H10K50/00—Organic light-emitting devices
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- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The present invention discloses a kind of QLED device and preparation method thereof based on combination electrode, the device successively includes combination electrode, quantum dot light emitting layer and first electrode, wherein, the combination electrode successively includes graphene layer, organic matter layer and metal oxide layer, and metal oxide layer and the quantum dot light emitting layer in the combination electrode overlap.The present invention increases the planarization and translucency of electrode by using graphene oxide/organic matter/metal oxide as combination electrode, and the organic matter can planarize graphene oxide, optimize electrode planarization, reduces electric leakage；Microcavity resonance not only may be implemented in the addition of the metal oxide, increases light transmission, can also enhance the injection in hole, improves exciton combined efficiency.Therefore, the present invention can effectively reduce leakage current, and enhance device light transmittance and exciton combined efficiency, to promote the luminous efficiency and service life of QLED.
Description
Technical field
The present invention relates to technology of quantum dots field more particularly to a kind of QLED devices and its preparation side based on combination electrode
Method.
Background technique
Light emitting diode with quantum dots (QLED) is because having many advantages, such as high brightness, low-power consumption, wide colour gamut, easy processing, closely
Extensive concern and research are obtained in illumination and display field over year.By the development of many years, QLED technology obtains huge
Development.From the point of view of the documents and materials of open report, red and green QLED external quantum efficiency highest at present is alreadyd exceed
Or close to 20%, show the limit of the internal quantum efficiency of red, green QLED actually already close to 100%.However, as high-performance
The indispensable blue QLED of full-color display, is whether far below in electro-optical efficiency or on service life at present
Red, green QLED, to limit application of the QLED in terms of full-color display.
In QLED device, during electrons and holes are injected into luminescent layer from the two poles of the earth, due to electrode and functional layer
Surface roughness it is big, surface defect is more, therefore in transmission process, and non-radiative recombination can occur for some electron hole
Fever, this not only influences electrode efficiency, but also the heat issued will lead to device temperature raising, influences the stability of each layer, leads
Cause device lifetime of short duration.
Therefore, the existing technology needs to be improved and developed.
Summary of the invention
In view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a kind of QLED device based on combination electrode
And preparation method thereof, it is intended to it solves because electrode and the more leakage current that easily leads to of functional layer surface defect are high in existing QLED device,
The problem of to influence QLED luminous efficiency and service life.
Technical scheme is as follows:
A kind of QLED device based on combination electrode, successively include combination electrode, quantum dot light emitting layer and first electrode,
In, the combination electrode successively includes graphene layer, organic matter layer and metal oxide layer, the metal in the combination electrode
Oxide skin(coating) and the quantum dot light emitting layer overlap.
The QLED device based on combination electrode, wherein when the combination electrode is anode, then the organic matter
The material of layer is one of PEDOT:PSS, TFB, PVK or Poly-TPD.
The QLED device based on combination electrode, wherein the material of the metal oxide layer is MoO3、V2O5、
NiO or WO3One of.
The QLED device based on combination electrode, wherein when the combination electrode is cathode, then the organic matter
The material of layer is Liq, Alq3, NDN1, NET5, one of Alq3 or OXD-7.
The QLED device based on combination electrode, wherein the material of the metal oxide layer is TiO2、SnO2Or
One of ZnO.
The QLED device based on combination electrode, wherein the graphene layer with a thickness of 40-100nm.
The QLED device based on combination electrode, wherein the organic matter layer with a thickness of 10-50nm.
The QLED device based on combination electrode, wherein the metal oxide layer with a thickness of 10-40nm.
A kind of preparation method of the QLED device based on combination electrode, wherein when the combination electrode is hearth electrode, packet
Include step:
Substrate is provided, deposits a graphene layer on substrate；
An organic matter layer is deposited on the graphene layer surface；
A metal oxide layer is deposited on the organic matter layer surface；
In one quantum dot light emitting layer of metal oxide layer surface；
First electrode is deposited in the quantum dot light emitting layer surface.
A kind of preparation method of the QLED device based on combination electrode, wherein when the combination electrode is top electrode, packet
Include step:
Substrate is provided, deposits first electrode on substrate；
A quantum dot light emitting layer is deposited in the first electrode surface；
A metal oxide layer is deposited in the quantum dot light emitting layer surface；
An organic matter layer is deposited in the metal oxide layer surface；
A graphene layer is deposited on the organic matter layer surface.
The preparation method of the QLED device based on combination electrode, wherein after preparing organic layer, to the organic matter
Layer is heated, and heating temperature is 100-200 DEG C, time 10-20min.The utility model has the advantages that the present invention is by using oxidation
Graphene/organic matter/metal oxide increases the planarization and translucency of electrode as combination electrode, and the organic matter can be with
Graphene oxide is planarized, electrode planarization is optimized, reduces electric leakage；Microcavity not only may be implemented in the addition of the metal oxide
Resonance increases light transmission, can also enhance the injection of hole or electronics, improves exciton combined efficiency.Therefore, the present invention can effectively subtract
Few leakage current, and enhance device light transmittance and exciton combined efficiency, to promote the luminous efficiency and service life of QLED.
Detailed description of the invention
Fig. 1 is a kind of structural block diagram of the QLED device preferred embodiment based on combination electrode of the present invention；
Fig. 2 is a kind of structural block diagram of the eurymeric QLED device preferred embodiment based on combination electrode of the present invention；
Fig. 3 is a kind of structural block diagram of the transoid QLED device preferred embodiment based on combination electrode of the present invention；
Fig. 4 is a kind of flow chart of one embodiment of preparation method of the QLED device based on combination electrode of the present invention；
Fig. 5 is a kind of flow chart of another embodiment of preparation method of the QLED device based on combination electrode of the present invention.
Specific embodiment
The present invention provides a kind of QLED device and preparation method thereof based on combination electrode, for make the purpose of the present invention,
Technical solution and effect are clearer, clear, and the present invention is described in more detail below.It should be appreciated that described herein
Specific embodiment is only used to explain the present invention, is not intended to limit the present invention.
Existing QLED generallys use single-layer graphene oxide as hearth electrode, due to single-layer graphene oxide electrode surface
Defect is more, is also easy to produce leakage phenomenon, and this not only lowers electrode efficiencies, and will affect the stability of device, to lead
Device lifetime is caused to shorten.
To solve the above problems, the present invention provides a kind of QLED device based on combination electrode, as shown in Figure 1, described
Device successively includes: combination electrode 10, quantum dot light emitting layer 20 and first electrode 30, wherein the combination electrode 10 is under
Supreme successively includes graphene layer 11, organic matter layer 12 and metal oxide layer 13.
Specifically, the present invention has preferable by increasing an organic matter layer 12, the organic matter on graphene layer 11
Filming performance and ductility, therefore the organic matter layer can optimize the planarization of electrode, to reduce electric leakage；Into one
Step increases by a metal oxide layer 13 on 12 surface of organic matter layer, and the metal oxide layer 13 can be with graphene layer
Optical microcavity is formed between 11, to improve light extraction efficiency.Therefore, the QLED device energy provided by the invention based on combination electrode
Leakage current is enough effectively reduced, and enhances device light transmittance and exciton combined efficiency, to promote the luminous efficiency of QLED and make
Use the service life.
Further, in the present invention, the graphene layer 11 with a thickness of 40-100nm, if the thickness of graphene layer is too thin
(be lower than 40nm), then poorly conductive；If the thickness of graphene layer is too thick (being higher than 100nm), it is easy to cause the translucency of electrode
Weaken.Therefore, the preferred graphene layer of the present invention with a thickness of 40-60nm, can guarantee the electric conductivity and translucency of electrode simultaneously
Energy.
Further, QLED device provided by the invention can be eurymeric device or transoid device, when the QLED device
When being connected for the anode of eurymeric device and the combination electrode and external power supply, i.e., when the described combination electrode is anode, in one kind
In specific embodiment, as shown in Fig. 2, the QLED device includes combination electrode 10, hole transmission layer 15, quantum dot light emitting layer
20, electron transfer layer 25 and first electrode 30, the combination electrode 10 successively include graphene layer 11, organic matter layer 12 and
Metal oxide layer 13.In this embodiment, the metal oxide layer 13 of the combination electrode 10 and the hole transmission layer 15
Overlapping, can effectively enhance the injection in hole, to improve exciton combined efficiency.
Specifically, when the combination electrode is anode, the material of the organic matter layer is PEDOT:PSS, TFB, PVK
Or one of Poly-TPD；The organic matter layer with a thickness of 10-50nm, (be lower than if the thickness of organic matter layer is too thin
10nm), then can not substantially flat graphite alkene layer, easily lead to electric leakage；If the thickness of organic matter layer is too thick (being higher than 50nm),
Influence the integral light-transmitting of electrode.Therefore, the preferred organic matter layer of the present invention with a thickness of 10-30nm, stone can either be optimized completely
Black alkene layer can guarantee the light transmission of electrode again.
In the present invention, when the QLED device is eurymeric device, the material of the metal oxide layer is MoO3、
V2O5, NiO or WO3One of；The metal oxide layer with a thickness of 10-40nm, if the thickness of metal oxide layer is too thin
(being lower than 10nm) is then unfavorable for enhancing the injection in hole；If the thickness of metal oxide layer is too thick (being higher than 40nm), with oxidation stone
The refractive index of black alkene/organic matter layer mismatches, and can not form microcavity resonance, leads to the reduction of electrode light transmittance.Therefore, of the invention
It is preferred that the metal oxide layer with a thickness of 10-20nm, the injection in hole can either be enhanced and the light transmission of electrode can be enhanced
Rate.
Further, in the present invention, the material of the hole transmission layer is TFB, polyTPD, PVK, molybdenum oxide, oxidation
One of nickel, tungsten oxide or vanadium oxide；The material of the electron transfer layer be LiF, CsF, CsCOs, NDN1, NET5, Alq3,
OXD-7, ZnO or TiO2One of.The thickness of the hole transmission layer is preferably 40-50nm, and too thin then electric conductivity is weaker, too
It is thick then be unfavorable for hole injection.The thickness of the electron transfer layer is preferably 30-60nm, and equally too thin then electric conductivity is weaker, too
It is thick then be unfavorable for electron injection.The quanta point material is II-IV race nucleocapsid semiconductor, VI-IV race nucleocapsid semiconductor, perovskite
One of luminescent material or I-III-IV race semiconductor, the thickness of the quantum dot light emitting layer is preferably 10-100nm.It is described
II-IV race nucleocapsid semiconductor includes but is not limited to CdSe/ZnS, CdZnS/ZnS, CdxZn1-xSeyS1-y/ZnS；The VI-IV
Race's nucleocapsid semiconductor includes but is not limited to PbSe, PbS, PbSe/CdS, PbSe/ZnS；The perovskite luminescent material includes but not
It is limited to CsPbCl3；I-III-IV race semiconductor includes but is not limited to Cu-In-S etc..
In another embodiment, when the QLED device is transoid device and the combination electrode and external power supply
When cathode connects, i.e., when combination electrode is as cathode, as shown in figure 3, the QLED device includes combination electrode 10, electron-transport
Layer 25, quantum dot light emitting layer 20, hole transmission layer 15 and first electrode 30, the combination electrode 10 successively include graphene layer
11, organic matter layer 12 and metal oxide layer 13.In this embodiment, the metal oxide layer 13 of the combination electrode 10 with
The electron transfer layer 15 overlaps, and can effectively enhance the injection of electronics, to improve exciton combined efficiency.
Specifically, when the combination electrode is as cathode, then the material of the organic matter layer be Liq, Alq3,
One of NDN1, NET5, Alq3 or OXD-7, but not limited to this；The material of the metal oxide layer is TiO2、SnO2Or
One of ZnO, but not limited to this.
Further, the preparation method of the present invention also provides a kind of QLED device based on combination electrode, as shown in figure 4,
Wherein, when the combination electrode is as hearth electrode, comprising steps of
S1, substrate is provided, deposits a graphene layer on substrate；
S2, an organic matter layer is deposited on the graphene layer surface；
S3, a metal oxide layer is deposited on the organic matter layer surface；
S4, in one quantum dot light emitting layer of metal oxide layer surface；
S5, first electrode is deposited in the quantum dot light emitting layer surface.
Specifically, glass substrate (substrate) is sequentially placed into acetone, washing lotion, deionized water and isopropyl first by the present invention
Ultrasonic cleaning is carried out in alcohol, each scavenging period is 10-20min, and the glass substrate after cleaning is placed in cleaning oven
It is dried for standby；
After glass substrate drying, a graphene layer is deposited on the glass substrate by solwution method；
Later, an organic matter layer is deposited on the graphene layer surface by vapor deposition or solwution method, and the glass substrate is set
In heating 10-20min on 100-200 DEG C of warm table；
After the glass substrate is cooling, by vapour deposition method in the redeposited metal oxide layer in the organic matter layer surface, system
Obtain combination electrode；
Then the metal oxide layer surface deposit a quantum dot light emitting layer, the quantum dot light emitting layer with a thickness of 20-
40nm；
Finally, by the metallic silver of one layer of 50-150nm of mask plate hot evaporation or aluminium as the on the quantum dot light emitting layer
One electrode, to be made, the present invention is based on the QLED devices of combination electrode.
Further, the preparation method of the present invention also provides a kind of QLED device based on combination electrode, such as Fig. 5 institute
Show, wherein when the combination electrode is as top electrode, comprising steps of
S10, substrate is provided, deposits first electrode on substrate；
S20, a quantum dot light emitting layer is deposited in the first electrode surface；
S30, a metal oxide layer is deposited in the quantum dot light emitting layer surface；
S40, an organic matter layer is deposited in the metal oxide layer surface；
S50, a graphene layer is deposited on the organic matter layer surface.
Below by specific embodiment to a kind of preparation method of the QLED device based on composite luminescence layer of the present invention do into
The explanation of one step:
Embodiment 1
1, glass substrate is sequentially placed into acetone, washing lotion carries out ultrasonic cleaning in deionized water and isopropanol, cleans every time
Time is 10min, and the glass substrate after cleaning is placed in cleaning oven and is dried for standby；
2, after glass substrate drying, a graphene layer is deposited on the glass substrate by solwution method, and will be described
Glass substrate, which is placed on 80 DEG C of warm table, heats 15min, the graphene layer with a thickness of 60nm；
3, after the glass substrate is cooling, one layer of TFB is deposited on the graphene layer surface by vapour deposition method, and by the glass
Glass substrate, which is placed on 100 DEG C of warm table, heats 10min, described TFB layers with a thickness of 30nm；
4, after the glass substrate is cooling, by vapour deposition method in one V of the TFB layer surface redeposition2O5Compound electric is made in layer
Pole；The V2O5Layer with a thickness of 30nm；
5, then in the V2O5Layer surface deposit a quantum dot light emitting layer, the quantum dot light emitting layer with a thickness of 30nm；
6, finally, by one layer of silver of mask plate hot evaporation as first electrode, first electricity on the quantum dot light emitting layer
Pole with a thickness of 100nm, thus be made the present invention is based on the QLED devices of combination electrode.
Embodiment 2
1, glass substrate is sequentially placed into acetone, washing lotion carries out ultrasonic cleaning in deionized water and isopropanol, cleans every time
Time is 15min, and the glass substrate after cleaning is placed in cleaning oven and is dried for standby；
2, after glass substrate drying, pass through the metallic aluminium of one layer of 100nm of mask plate hot evaporation on the glass substrate
As first electrode；
3, the first electrode surface deposit a quantum dot light emitting layer, the quantum dot light emitting layer with a thickness of 35nm；
4, a MoO is deposited in the quantum dot light emitting layer surface by vapour deposition method3Layer, the MoO3Layer with a thickness of 15nm；
5, by vapour deposition method in the MoO3Layer surface deposits a PVK layers, and the glass substrate is placed in 120 DEG C of warm table
Upper heating 10min, described PVK layers with a thickness of 20nm；
6, after the glass substrate is cooling, a graphene layer is deposited on the surface of the PVB layer, and the glass substrate is set
In heating 15min on 70 DEG C of warm table, the graphene layer with a thickness of 80nm.
Embodiment 3
A kind of preparation method preferred embodiment of the eurymeric QLED device based on combination electrode as hearth electrode:
1, glass substrate is sequentially placed into acetone, washing lotion carries out ultrasonic cleaning in deionized water and isopropanol, cleans every time
Time is 15min, and the glass substrate after cleaning is placed in cleaning oven and is dried for standby；
2, after glass substrate drying, a graphene layer is deposited on the glass substrate, and the glass substrate is set
In heating 15min on 80 DEG C of warm table, the graphene layer with a thickness of 100nm.
3, after the glass substrate is cooling, one layer of PEDOT:PSS is deposited on the graphene layer surface by vapour deposition method,
And the glass substrate is placed on 150 DEG C of warm table and heats 15min；Described PEDOT:PSS layers with a thickness of 50nm.
4, after the glass substrate is cooling, one layer of MoO is deposited on the PEDOT:PSS layer by vapour deposition method3, it is made
Combination electrode, the MoO3Layer with a thickness of 40nm；
5, in the MoO3Deposit one layer of hole transmission layer TFB on layer, described TFB layers with a thickness of 80nm, and by the glass
Substrate is heated to 150 DEG C, makes annealing treatment 15min；
6, after the glass substrate is cooling, quantum dot light emitting layer, the thickness of the quantum dot light emitting layer are deposited on TFB layers described
Degree is 40nm；
7, the quantum dot light emitting layer surface deposit an electron transfer layer ZnO, the ZnO layer with a thickness of 40nm；It will be described
Glass substrate is placed on 80 DEG C of warm table and heats 30min, removes remaining solvent；
8, finally, the glass substrate is placed in vapor deposition storehouse through the aluminium of one layer of 100nm of mask plate hot evaporation as the first electricity
A kind of eurymeric QLED device based on combination electrode is made in pole.
Embodiment 4
A kind of preparation method preferred embodiment of the transoid QLED device based on combination electrode as hearth electrode:
1, glass substrate is sequentially placed into acetone, washing lotion carries out ultrasonic cleaning in deionized water and isopropanol, cleans every time
Time is 20min, and the glass substrate after cleaning is placed in cleaning oven and is dried for standby；
2, after glass substrate drying, a graphene layer is deposited on the glass substrate, and the glass substrate is set
In heating 15min on 80 DEG C of warm table, the graphene layer with a thickness of 60nm；
3, after the glass substrate is cooling, by vapour deposition method in one layer of graphene layer surface PBD, and by the glass base
Plate is placed on 150 DEG C of warm table and heats 15min；Described PBD layers with a thickness of 25nm；
4, after the glass substrate is cooling, one layer of TiO is deposited on the PBD layer by vapour deposition method2, combination electrode is made,
The TiO2Layer with a thickness of 25nm；
5, in the TiO2Deposit one layer of electron transfer layer ZnO on layer, the electron transfer layer with a thickness of 50nm, and will be described
Glass substrate is heated to 80 DEG C, makes annealing treatment 15min；
6, after the glass substrate is cooling, quantum dot light emitting layer, the thickness of the quantum dot light emitting layer are deposited in the ZnO layer
Degree is 40nm；
7, deposit a hole transmission layer TFB in the quantum dot light emitting layer surface, the hole transmission layer with a thickness of 40nm,
The glass substrate is placed on 80 DEG C of warm table and is heated 30 minutes, removes remaining solvent；
8, finally, the glass substrate is placed in vapor deposition storehouse through the aluminium of one layer of 100nm of mask plate hot evaporation as the first electricity
A kind of transoid QLED device based on combination electrode is made in pole.
Embodiment 5
A kind of preparation method preferred embodiment of the eurymeric QLED device based on combination electrode as top electrode:
1, glass substrate is sequentially placed into acetone, washing lotion carries out ultrasonic cleaning in deionized water and isopropanol, cleans every time
Time is 20min, and the glass substrate after cleaning is placed in cleaning oven and is dried for standby；
2, after glass substrate drying, made on the glass substrate by the metallic aluminium of one layer of 80nm of mask plate hot evaporation
For first electrode；
3, deposit one layer of hole transmission layer polyTPD in the first electrode surface, described polyTPD layers with a thickness of 80nm,
And the glass substrate is heated to 150 DEG C, make annealing treatment 15min；
4, after the glass substrate is cooling, quantum dot light emitting layer, the quantum dot light emitting layer are deposited on polyTPD layers described
With a thickness of 30nm；
5, deposit an electron transfer layer LiF in the quantum dot surface, the electron transfer layer with a thickness of 50nm, and will be described
Glass substrate is heated to 90 DEG C, makes annealing treatment 18min；
6, after the glass substrate is cooling, a metal oxide is deposited in the electron-transport layer surface by vapour deposition method
(WO3) layer, the WO3Layer with a thickness of 25nm；
7, by vapour deposition method in the WO3Layer surface deposits an organic matter (PVK) layer, and the glass substrate is placed in 120 DEG C
Warm table on heat 10min, described PVK layers with a thickness of 20nm；
8, after the glass substrate is cooling, a graphene layer is deposited on PVK layers of the surface, and the glass substrate is set
In heating 15min on 70 DEG C of warm table, the graphene layer with a thickness of 80nm.
Embodiment 6
A kind of preparation method preferred embodiment of the transoid QLED device based on combination electrode as top electrode:
1, glass substrate is sequentially placed into acetone, washing lotion carries out ultrasonic cleaning in deionized water and isopropanol, cleans every time
Time is 20min, and the glass substrate after cleaning is placed in cleaning oven and is dried for standby；
2, after glass substrate drying, made on the glass substrate by the metallic aluminium of one layer of 80nm of mask plate hot evaporation
For first electrode；
3, deposit an electron transfer layer ZnO in the first electrode surface, the electron transfer layer with a thickness of 50nm, and by institute
It states glass substrate and is heated to 80 DEG C, make annealing treatment 15min；
4, after the glass substrate is cooling, quantum dot light emitting layer, the thickness of the quantum dot light emitting layer are deposited in the ZnO layer
Degree is 40nm；
5, deposit one layer of hole transmission layer TFB in the quantum dot light emitting layer surface, described TFB layer with a thickness of 80nm, and general
The glass substrate is heated to 150 DEG C, makes annealing treatment 15min；
6, after the glass substrate is cooling, a metal oxide is deposited in the hole transport layer surface by vapour deposition method
(NiO) layer, the NiO layer with a thickness of 15nm；
7, an organic matter (PVK) layer is deposited on the NiO layer surface by vapour deposition method, and the glass substrate is placed in 120 DEG C
Warm table on heat 10min, described PVK layers with a thickness of 20nm；
8, after the glass substrate is cooling, a graphene layer is deposited on PVK layers of the surface, and the glass substrate is set
In heating 15min on 70 DEG C of warm table, the graphene layer with a thickness of 80nm.
Further, in the embodiment 3, embodiment 4, embodiment 5 and embodiment 6, the hole transmission layer and electronics
Transport layer can pass through the vacuum side such as the solwution methods such as printing, spin coating and spraying or vacuum evaporation, sputtering and chemical vapor deposition
Method preparation；Quantum dot light emitting layer can be realized by the methods of spin coating, printing and spraying；Chemical vapor deposition then can be used in the electrode
(CVD), magnetron sputtering, sol-gel method etc. are realized.
In conclusion the present invention increases by using graphene oxide/organic matter/metal oxide as combination electrode
The planarization and translucency of electrode, the organic matter can planarize graphene oxide, optimize electrode planarization, reduce electric leakage；
Microcavity resonance not only may be implemented in the addition of the metal oxide, increases light transmission, can also enhance the injection of hole or electronics, mention
High exciton combined efficiency.Therefore, the present invention can effectively reduce leakage current, and enhance device light transmittance and the compound effect of exciton
Rate, to promote the luminous efficiency and service life of QLED.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations all should belong to the guarantor of appended claims of the present invention
Protect range.
Claims (11)
- It successively include combination electrode, quantum dot light emitting layer and first electrode 1. a kind of QLED device based on combination electrode, It is characterized in that, the combination electrode successively includes graphene layer, organic matter layer and metal oxide layer, in the combination electrode Metal oxide layer and the quantum dot light emitting layer overlap.
- 2. the QLED device according to claim 1 based on combination electrode, which is characterized in that when the combination electrode is sun When pole, then the material of the organic matter layer is one of PEDOT:PSS, TFB, PVK or Poly-TPD.
- 3. the QLED device according to claim 2 based on combination electrode, which is characterized in that the metal oxide layer Material is MoO3、V2O5, NiO or WO3One of.
- 4. the QLED device according to claim 1 based on combination electrode, which is characterized in that when the combination electrode is yin When pole, then the material of the organic matter layer is Liq, Alq3, NDN1, NET5, one of Alq3 or OXD-7.
- 5. the QLED device according to claim 4 based on combination electrode, which is characterized in that the metal oxide layer Material is TiO2、SnO2Or one of ZnO.
- 6. -5 any QLED device based on combination electrode according to claim 1, which is characterized in that the graphene layer With a thickness of 40-100nm.
- 7. -5 any QLED device based on combination electrode according to claim 1, which is characterized in that the organic matter layer With a thickness of 10-50nm.
- 8. -5 any QLED device based on combination electrode according to claim 1, which is characterized in that the metal oxidation Nitride layer with a thickness of 10-40nm.
- 9. a kind of preparation method of the QLED device based on combination electrode, which is characterized in that when the combination electrode is hearth electrode When, comprising steps ofSubstrate is provided, deposits a graphene layer on substrate；An organic matter layer is deposited on the graphene layer surface；A metal oxide layer is deposited on the organic matter layer surface；In one quantum dot light emitting layer of metal oxide layer surface；First electrode is deposited in the quantum dot light emitting layer surface.
- 10. a kind of preparation method of the QLED device based on combination electrode, which is characterized in that when the combination electrode is top electrode When, comprising steps ofSubstrate is provided, deposits first electrode on substrate；A quantum dot light emitting layer is deposited in the first electrode surface；A metal oxide layer is deposited in the quantum dot light emitting layer surface；An organic matter layer is deposited in the metal oxide layer surface；A graphene layer is deposited on the organic matter layer surface.
- 11. the preparation method of the QLED device according to claim 9 or 10 based on combination electrode, which is characterized in that system After standby organic layer, the organic matter layer is heated, heating temperature is 100-200 DEG C, time 10-20min.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112887880A (en) * | 2021-01-12 | 2021-06-01 | 武汉华星光电半导体显示技术有限公司 | Electronic device and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112887880A (en) * | 2021-01-12 | 2021-06-01 | 武汉华星光电半导体显示技术有限公司 | Electronic device and manufacturing method thereof |
| CN112887880B (en) * | 2021-01-12 | 2022-11-01 | 武汉华星光电半导体显示技术有限公司 | Electronic device and manufacturing method thereof |
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Application publication date: 20190226 |