CN106784205A - Qled and preparation method thereof - Google Patents

Qled and preparation method thereof Download PDF

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Publication number
CN106784205A
CN106784205A CN201611208915.7A CN201611208915A CN106784205A CN 106784205 A CN106784205 A CN 106784205A CN 201611208915 A CN201611208915 A CN 201611208915A CN 106784205 A CN106784205 A CN 106784205A
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quantum dot
layer
qled
light emitting
passivation
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CN201611208915.7A
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CN106784205B (en
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刘佳
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TCL Corp
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TCL Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies

Abstract

The invention provides a kind of QLED, including the substrate, anode, hole transmission layer, passivation quantum dot light emitting layer, electron transfer layer and the negative electrode that set gradually, wherein, the passivation quantum dot light emitting layer is made up of passivation quantum dot, and the passivation quantum dot is that the quantum dot after surface passivating treatment is carried out using iodine.The preparation method of the QLED, comprises the following steps：Patterned anode substrate and I are provided2Alcoholic solution；Hole transmission layer is prepared on the patterned anode substrate；Quantum dot light-emitting film is deposited on the hole transport layer；Under heating condition, the I is deposited on the quantum dot light emitting film2Alcoholic solution, obtains being passivated quantum dot light emitting layer after being evaporated；Electron transfer layer and negative electrode are sequentially depositing on the passivation quantum dot light emitting layer.

Description

QLED and preparation method thereof
Technical field
The invention belongs to technical field of flat panel display, more particularly to a kind of QLED and preparation method thereof.
Background technology
Semiconductor-quantum-point has the humorous optico-electronic properties of size adjustable, is widely used in light emitting diode, solar energy Battery and biological fluorescent labelling field.By the development of more than 20 years, quantum dot synthetic technology achieved significant achievement, can be with Synthesis obtains various high-quality CdS quantum dots, and its photoluminescence efficiency can reach more than 85%.Due to quantum dot The features such as luminous, luminous line width, photoluminescence efficiency high and heat endurance with dimension adjustable, be luminous with quantum dot The light emitting diode with quantum dots (QLED) of layer turns into display of future generation and the solid-state illumination light source of great potential.Quantum dot light emitting two Many advantages, such as pole pipe is because possessing high brightness, low-power consumption, wide colour gamut, easy processing, obtains in illumination and display field in recent years Extensive concern and research.By development for many years, QLED technologies obtain huge development.From the documents and materials of open report From the point of view of, red and green QLED the external quantum efficiency of current highest is alreadyd exceed or close to 20%, shows red green QLED's The limit of the internal quantum efficiency actually already close to 100%.However, as the indispensable blueness of the full-color display of high-performance QLED, at present whether in electro-optical efficiency, or on service life, all far below red green QLED, so as to limit Applications of the QLED in terms of full-color display.
Quantum dot has very big specific surface area, and substantial amounts of surface defect, including suspension are easily caused in building-up process Key, element room etc..During quantum dot light emitting, when the electron hole for coming from both positive and negative polarity moves to quantum dot surface, by Can cause that electron hole is captured in the substantial amounts of defect of quantum dot surface, limit its recombination luminescence, reduce luminous efficiency.Cause This, passivation, reduce quantum dot surface defect to improve its luminous efficiency play the role of it is important.
The content of the invention
It is an object of the invention to provide a kind of QLED and preparation method thereof, it is intended in solving existing QLED, quantum dot table Planar defect causes the low problem of QLED device light emitting efficiencies.
The present invention is achieved in that a kind of QLED, including substrate, anode, hole transmission layer, the passivation amount for setting gradually Son point luminescent layer, electron transfer layer and negative electrode, wherein, the passivation quantum dot light emitting layer is made up of passivation quantum dot, described blunt It is that the quantum dot after surface passivating treatment is carried out using iodine to change quantum dot.
And, a kind of preparation method of QLED is comprised the following steps：
Patterned anode substrate and I are provided2Alcoholic solution；
Hole transmission layer is prepared on the patterned anode substrate；
Quantum dot light-emitting film is deposited on the hole transport layer；
Under heating condition, the I is deposited on the quantum dot light emitting film2Alcoholic solution, obtains being passivated quantum after being evaporated Point luminescent layer；
Electron transfer layer and negative electrode are sequentially depositing on the passivation quantum dot light emitting layer.
The QLED that the present invention is provided, surface passivating treatment is carried out to quantum dot using iodine, and the iodine can replace quantum dot The dangling bonds on surface supplement its room, so as to be passivated quantum dot surface defect.Thus obtained passivation quantum dot light emitting layer Surface defect can be reduced, and then reduces the capture to electron hole, so as to increase effective combined efficiency, improve QLED devices effect Rate.
The preparation method of the QLED that the present invention is provided, one layer of I is deposited on quantum dot film surface2Alcoholic solution is used as passivation Layer, by heating so that I-Its surface dangling bonds can be replaced or its room is supplemented, so as to reach passivation quantum dot table The purpose of planar defect, and then the capture to electron hole is reduced, so as to increase effective combined efficiency, improve QLED device efficiencies.
Brief description of the drawings
Fig. 1 is the structural representation of QLED provided in an embodiment of the present invention.
Specific embodiment
In order that the technical problem to be solved in the present invention, technical scheme and beneficial effect become more apparent, below in conjunction with Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain The present invention, is not intended to limit the present invention.
With reference to Fig. 1, a kind of QLED, including substrate 1, the anode 2, hole transport for setting gradually are the embodiment of the invention provides Layer 3, passivation quantum dot light emitting layer 4, electron transfer layer 5 and negative electrode 6, wherein, the passivation quantum dot light emitting layer 4 is by passivation quantum Point is made, and the passivation quantum dot is that the quantum dot after surface passivating treatment is carried out using iodine.
Specifically, in the embodiment of the present invention, the passivation quantum dot light emitting layer 4 is made up of passivation quantum dot, the passivation Quantum dot is that the quantum dot after surface passivating treatment is carried out using iodine.Surface passivation is carried out to quantum dot by iodine, can be replaced The dangling bonds of quantum dot surface supplement its room, so as to reduce the capture to electron hole, increase effective combined efficiency, carry QLED device efficiencies high.Further, the thickness of the passivation quantum dot light emitting layer 4 is 30-50nm.
Preferably, in order to improve the injection efficiency of carrier, the QLED also include hole injection layer (not indicated in figure), At least one of which in electron injecting layer (not indicated in figure).
In above-described embodiment, the selection of the substrate 1 is not limited strictly, can use hard substrate, such as glass substrate, Flexible base board can also be used.
The anode 2 can be ITO, certainly, not limited to this.
The hole mobile material of the hole transmission layer 3 can use conventional hole transport material, including but not limited to PEDOT:PSS, the thickness of the hole transmission layer 3 is 30-50nm.
Quantum dot before being passivated by iodine in the quantum dot light emitting layer 4 can be using conventional quantum dot.
The electron transport material of the electron transfer layer 5 can be using conventional electron transport material, including but not limited to n Type zinc oxide.The thickness of the electron transfer layer 5 is 10-100nm.
The negative electrode 6 can be prepared using conventional cathode material, including argent or metallic aluminium.The thickness of the negative electrode 6 It is 60-120nm to spend, more preferably 100nm.
QLED provided in an embodiment of the present invention, surface passivating treatment is carried out to quantum dot using iodine, and the iodine can replace The dangling bonds of quantum dot surface supplement its room, so as to be passivated quantum dot surface defect.Thus obtained passivation quantum dot Luminescent layer can reduce surface defect, and then reduce the capture to electron hole, so as to increase effective combined efficiency, improve QLED Device efficiency.
QLED provided in an embodiment of the present invention can be prepared by following methods.
And, the embodiment of the present invention additionally provides a kind of preparation method of QLED, comprises the following steps：
S01., patterned anode substrate and I are provided2Alcoholic solution；
S02. hole transmission layer is prepared on the patterned anode substrate；
S03. quantum dot light-emitting film is deposited on the hole transport layer；
S04. under heating condition, the I is deposited on the quantum dot light emitting film2Alcoholic solution, is passivated after being evaporated Quantum dot light emitting layer；
S05. electron transfer layer and negative electrode are sequentially depositing on the passivation quantum dot light emitting layer.
Specifically, in above-mentioned steps S01, the patterned anode substrate can be by the deposition anode on substrate, then Patterning is obtained.Preferably, it is described also including carrying out cleaning treatment to the patterned anode substrate in order to improve adhesive force The method of cleaning treatment is：The anode grid substrate is respectively placed in acetone, washing lotion, deionized water and isopropanol in order Row is cleaned by ultrasonic, and each ultrasonic time is 10-20min, concretely 15min, after the completion of waiting to be cleaned by ultrasonic, by the anode base Plate is positioned over dry for standby in cleaning oven.
The I2Alcoholic solution is the alcoholic solution of iodine molecule, it is preferred that the I2I in alcoholic solution2Concentration is 4-20mg/ml, from And fully it is passivated the defect of quantum dot surface.If the I2I in alcoholic solution2Concentration is too low, and its passivation to quantum dot surface is not complete Entirely, still having the not passivated defect in part can be quenched electron hole pair as complex centre；If the I2I in alcoholic solution2Concentration It is too high, due to I2The characteristic of semiconductor of molecular layer, can reduce electron transport ability.
In above-mentioned steps S02, hole transmission layer is prepared on the patterned anode substrate, solution processing method can be used Realize, including but not limited to spin coating.After using solution processing method deposition of hole transmission material, heated, it is molten to remove Agent, forms compact film.Specific preferred, the anode grid substrate that will deposit has hole mobile material is placed on 150 DEG C of warm table Heating 30 minutes, forms hole transmission layer.
In above-mentioned steps S03, quantum dot light-emitting film is deposited on the hole transport layer, can use conventional method reality It is existing, such as realized using solution processing method, including but not limited to spin coating.
In above-mentioned steps S04, the I is deposited in a heated condition2Alcoholic solution, wherein, the heating temperature of the heating condition Degree is preferably 60-150 DEG C, and the heating-up temperature can cause I-Its surface dangling bonds can be replaced or its room is supplemented, so that Reach the purpose of passivation quantum dot surface defect.If the heating-up temperature is too low, the I2I in alcoholic solution2To quantum dot surface Passivation is incomplete, still has the not passivated defect in part electron hole pair can be quenched as complex centre；If the heating temperature Height is spent, quantum dot surface ligand can be destroyed so that quantum dot is largely reunited, influence its stability.
The embodiment of the present invention deposits the I on the quantum dot light emitting film2Alcoholic solution using solution processing method realize, Including but not limited to spin coating.Specific preferred, the substrate that will deposit has quantum dot light emitting film is placed in 100 DEG C of thermal station, I in drop2Alcoholic solution, is paved with whole quantum dot film surface, treats that cooling is removed in surface after being evaporated.
In above-mentioned steps S05, it is sequentially depositing electron transfer layer and negative electrode and can adopts on the passivation quantum dot light emitting layer Realized with this area conventional method.Specifically, using solution processing method deposit electron transport material, including but not limited to spin coating, Then heated, to remove solvent, formed compact film.It is specific preferred, the base for having electron transport material will be deposited Piece is placed on 150 DEG C of warm table and heats 30 minutes, forms electron transfer layer.
The substrate that each functional layer will have been deposited is placed in evaporation storehouse by mask plate hot evaporation layer of metal silver or aluminium work It is negative electrode.
It is further preferred that the embodiment of the present invention also includes preparing at least one of which in electron injecting layer, hole injection layer. Specifically, before the hole transmission layer is deposited, one layer of hole injection layer is deposited on figure oxidation ITO surfaces；In deposition institute Before stating negative electrode, one layer of electron injecting layer is deposited on the electron transport layer.
The preparation method of QLED provided in an embodiment of the present invention, one layer of I is deposited on quantum dot film surface2Alcoholic solution conduct Passivation layer, by heating so that I-Its surface dangling bonds can be replaced or its room is supplemented, so as to reach passivation quantum The purpose of point surface defect, and then the capture to electron hole is reduced, so as to increase effective combined efficiency, improve QLED devices effect Rate.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the invention, it is all in essence of the invention Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.

Claims (7)

1. a kind of QLED, it is characterised in that including the substrate, anode, hole transmission layer, the passivation quantum dot light emitting that set gradually Layer, electron transfer layer and negative electrode, wherein, the passivation quantum dot light emitting layer is made up of passivation quantum dot, the passivation quantum dot It is that the quantum dot after surface passivating treatment is carried out using iodine.
2. QLED as claimed in claim 1, it is characterised in that the thickness of the passivation quantum dot light emitting layer is 30-50nm.
3. QLED as claimed in claim 1 or 2, it is characterised in that also including in hole injection layer, electron injecting layer at least One layer.
4. a kind of preparation method of QLED, comprises the following steps：
Patterned anode substrate and I are provided2Alcoholic solution；
Hole transmission layer is prepared on the patterned anode substrate；
Quantum dot light-emitting film is deposited on the hole transport layer；
Under heating condition, the I is deposited on the quantum dot light emitting film2Alcoholic solution, obtains being passivated quantum dot light emitting after being evaporated Layer；
Electron transfer layer and negative electrode are sequentially depositing on the passivation quantum dot light emitting layer.
5. the preparation method of QLED as claimed in claim 4, it is characterised in that the I2I in alcoholic solution2Concentration is 4-20mg/ ml。
6. the preparation method of QLED as claimed in claim 4, it is characterised in that the heating-up temperature of the heating condition is 60- 150℃。
7. the preparation method of the QLED as described in claim 4-6 is any, it is characterised in that also including prepare electron injecting layer, At least one of which in hole injection layer.
CN201611208915.7A 2016-12-23 2016-12-23 QLED and preparation method thereof Active CN106784205B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108461590A (en) * 2017-02-20 2018-08-28 Tcl集团股份有限公司 A kind of light emitting diode with quantum dots device and preparation method thereof
CN112331779A (en) * 2019-11-20 2021-02-05 广东聚华印刷显示技术有限公司 Quantum dot light-emitting diode and preparation method thereof and quantum dot light-emitting layer passivation method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130019930A1 (en) * 2011-07-20 2013-01-24 Alliance For Sustainable Energy, Llc Secondary Treatment of Films of Colloidal Quantum Dots for Optoelectronics and Devices Produced Thereby
CN105070849A (en) * 2015-07-14 2015-11-18 Tcl集团股份有限公司 Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method thereof
US9324562B1 (en) * 2014-11-12 2016-04-26 Alliance For Sustainable Energy, Llc Metal halide solid-state surface treatment for nanocrystal materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130019930A1 (en) * 2011-07-20 2013-01-24 Alliance For Sustainable Energy, Llc Secondary Treatment of Films of Colloidal Quantum Dots for Optoelectronics and Devices Produced Thereby
US9324562B1 (en) * 2014-11-12 2016-04-26 Alliance For Sustainable Energy, Llc Metal halide solid-state surface treatment for nanocrystal materials
CN105070849A (en) * 2015-07-14 2015-11-18 Tcl集团股份有限公司 Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108461590A (en) * 2017-02-20 2018-08-28 Tcl集团股份有限公司 A kind of light emitting diode with quantum dots device and preparation method thereof
CN112331779A (en) * 2019-11-20 2021-02-05 广东聚华印刷显示技术有限公司 Quantum dot light-emitting diode and preparation method thereof and quantum dot light-emitting layer passivation method

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