CN106784205A - Qled and preparation method thereof - Google Patents
Qled and preparation method thereof Download PDFInfo
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- CN106784205A CN106784205A CN201611208915.7A CN201611208915A CN106784205A CN 106784205 A CN106784205 A CN 106784205A CN 201611208915 A CN201611208915 A CN 201611208915A CN 106784205 A CN106784205 A CN 106784205A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000002096 quantum dot Substances 0.000 claims abstract description 78
- 238000002161 passivation Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000005540 biological transmission Effects 0.000 claims abstract description 13
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 8
- 239000011630 iodine Substances 0.000 claims abstract description 8
- 230000005525 hole transport Effects 0.000 claims abstract description 7
- -1 anode Substances 0.000 claims abstract description 3
- 239000000243 solution Substances 0.000 claims description 18
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 9
- 230000001476 alcoholic effect Effects 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 49
- 230000007547 defect Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000010129 solution processing Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 238000001215 fluorescent labelling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a kind of QLED, including the substrate, anode, hole transmission layer, passivation quantum dot light emitting layer, electron transfer layer and the negative electrode that set gradually, wherein, the passivation quantum dot light emitting layer is made up of passivation quantum dot, and the passivation quantum dot is that the quantum dot after surface passivating treatment is carried out using iodine.The preparation method of the QLED, comprises the following steps:Patterned anode substrate and I are provided2Alcoholic solution;Hole transmission layer is prepared on the patterned anode substrate;Quantum dot light-emitting film is deposited on the hole transport layer;Under heating condition, the I is deposited on the quantum dot light emitting film2Alcoholic solution, obtains being passivated quantum dot light emitting layer after being evaporated;Electron transfer layer and negative electrode are sequentially depositing on the passivation quantum dot light emitting layer.
Description
Technical field
The invention belongs to technical field of flat panel display, more particularly to a kind of QLED and preparation method thereof.
Background technology
Semiconductor-quantum-point has the humorous optico-electronic properties of size adjustable, is widely used in light emitting diode, solar energy
Battery and biological fluorescent labelling field.By the development of more than 20 years, quantum dot synthetic technology achieved significant achievement, can be with
Synthesis obtains various high-quality CdS quantum dots, and its photoluminescence efficiency can reach more than 85%.Due to quantum dot
The features such as luminous, luminous line width, photoluminescence efficiency high and heat endurance with dimension adjustable, be luminous with quantum dot
The light emitting diode with quantum dots (QLED) of layer turns into display of future generation and the solid-state illumination light source of great potential.Quantum dot light emitting two
Many advantages, such as pole pipe is because possessing high brightness, low-power consumption, wide colour gamut, easy processing, obtains in illumination and display field in recent years
Extensive concern and research.By development for many years, QLED technologies obtain huge development.From the documents and materials of open report
From the point of view of, red and green QLED the external quantum efficiency of current highest is alreadyd exceed or close to 20%, shows red green QLED's
The limit of the internal quantum efficiency actually already close to 100%.However, as the indispensable blueness of the full-color display of high-performance
QLED, at present whether in electro-optical efficiency, or on service life, all far below red green QLED, so as to limit
Applications of the QLED in terms of full-color display.
Quantum dot has very big specific surface area, and substantial amounts of surface defect, including suspension are easily caused in building-up process
Key, element room etc..During quantum dot light emitting, when the electron hole for coming from both positive and negative polarity moves to quantum dot surface, by
Can cause that electron hole is captured in the substantial amounts of defect of quantum dot surface, limit its recombination luminescence, reduce luminous efficiency.Cause
This, passivation, reduce quantum dot surface defect to improve its luminous efficiency play the role of it is important.
The content of the invention
It is an object of the invention to provide a kind of QLED and preparation method thereof, it is intended in solving existing QLED, quantum dot table
Planar defect causes the low problem of QLED device light emitting efficiencies.
The present invention is achieved in that a kind of QLED, including substrate, anode, hole transmission layer, the passivation amount for setting gradually
Son point luminescent layer, electron transfer layer and negative electrode, wherein, the passivation quantum dot light emitting layer is made up of passivation quantum dot, described blunt
It is that the quantum dot after surface passivating treatment is carried out using iodine to change quantum dot.
And, a kind of preparation method of QLED is comprised the following steps:
Patterned anode substrate and I are provided2Alcoholic solution;
Hole transmission layer is prepared on the patterned anode substrate;
Quantum dot light-emitting film is deposited on the hole transport layer;
Under heating condition, the I is deposited on the quantum dot light emitting film2Alcoholic solution, obtains being passivated quantum after being evaporated
Point luminescent layer;
Electron transfer layer and negative electrode are sequentially depositing on the passivation quantum dot light emitting layer.
The QLED that the present invention is provided, surface passivating treatment is carried out to quantum dot using iodine, and the iodine can replace quantum dot
The dangling bonds on surface supplement its room, so as to be passivated quantum dot surface defect.Thus obtained passivation quantum dot light emitting layer
Surface defect can be reduced, and then reduces the capture to electron hole, so as to increase effective combined efficiency, improve QLED devices effect
Rate.
The preparation method of the QLED that the present invention is provided, one layer of I is deposited on quantum dot film surface2Alcoholic solution is used as passivation
Layer, by heating so that I-Its surface dangling bonds can be replaced or its room is supplemented, so as to reach passivation quantum dot table
The purpose of planar defect, and then the capture to electron hole is reduced, so as to increase effective combined efficiency, improve QLED device efficiencies.
Brief description of the drawings
Fig. 1 is the structural representation of QLED provided in an embodiment of the present invention.
Specific embodiment
In order that the technical problem to be solved in the present invention, technical scheme and beneficial effect become more apparent, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain
The present invention, is not intended to limit the present invention.
With reference to Fig. 1, a kind of QLED, including substrate 1, the anode 2, hole transport for setting gradually are the embodiment of the invention provides
Layer 3, passivation quantum dot light emitting layer 4, electron transfer layer 5 and negative electrode 6, wherein, the passivation quantum dot light emitting layer 4 is by passivation quantum
Point is made, and the passivation quantum dot is that the quantum dot after surface passivating treatment is carried out using iodine.
Specifically, in the embodiment of the present invention, the passivation quantum dot light emitting layer 4 is made up of passivation quantum dot, the passivation
Quantum dot is that the quantum dot after surface passivating treatment is carried out using iodine.Surface passivation is carried out to quantum dot by iodine, can be replaced
The dangling bonds of quantum dot surface supplement its room, so as to reduce the capture to electron hole, increase effective combined efficiency, carry
QLED device efficiencies high.Further, the thickness of the passivation quantum dot light emitting layer 4 is 30-50nm.
Preferably, in order to improve the injection efficiency of carrier, the QLED also include hole injection layer (not indicated in figure),
At least one of which in electron injecting layer (not indicated in figure).
In above-described embodiment, the selection of the substrate 1 is not limited strictly, can use hard substrate, such as glass substrate,
Flexible base board can also be used.
The anode 2 can be ITO, certainly, not limited to this.
The hole mobile material of the hole transmission layer 3 can use conventional hole transport material, including but not limited to
PEDOT:PSS, the thickness of the hole transmission layer 3 is 30-50nm.
Quantum dot before being passivated by iodine in the quantum dot light emitting layer 4 can be using conventional quantum dot.
The electron transport material of the electron transfer layer 5 can be using conventional electron transport material, including but not limited to n
Type zinc oxide.The thickness of the electron transfer layer 5 is 10-100nm.
The negative electrode 6 can be prepared using conventional cathode material, including argent or metallic aluminium.The thickness of the negative electrode 6
It is 60-120nm to spend, more preferably 100nm.
QLED provided in an embodiment of the present invention, surface passivating treatment is carried out to quantum dot using iodine, and the iodine can replace
The dangling bonds of quantum dot surface supplement its room, so as to be passivated quantum dot surface defect.Thus obtained passivation quantum dot
Luminescent layer can reduce surface defect, and then reduce the capture to electron hole, so as to increase effective combined efficiency, improve QLED
Device efficiency.
QLED provided in an embodiment of the present invention can be prepared by following methods.
And, the embodiment of the present invention additionally provides a kind of preparation method of QLED, comprises the following steps:
S01., patterned anode substrate and I are provided2Alcoholic solution;
S02. hole transmission layer is prepared on the patterned anode substrate;
S03. quantum dot light-emitting film is deposited on the hole transport layer;
S04. under heating condition, the I is deposited on the quantum dot light emitting film2Alcoholic solution, is passivated after being evaporated
Quantum dot light emitting layer;
S05. electron transfer layer and negative electrode are sequentially depositing on the passivation quantum dot light emitting layer.
Specifically, in above-mentioned steps S01, the patterned anode substrate can be by the deposition anode on substrate, then
Patterning is obtained.Preferably, it is described also including carrying out cleaning treatment to the patterned anode substrate in order to improve adhesive force
The method of cleaning treatment is:The anode grid substrate is respectively placed in acetone, washing lotion, deionized water and isopropanol in order
Row is cleaned by ultrasonic, and each ultrasonic time is 10-20min, concretely 15min, after the completion of waiting to be cleaned by ultrasonic, by the anode base
Plate is positioned over dry for standby in cleaning oven.
The I2Alcoholic solution is the alcoholic solution of iodine molecule, it is preferred that the I2I in alcoholic solution2Concentration is 4-20mg/ml, from
And fully it is passivated the defect of quantum dot surface.If the I2I in alcoholic solution2Concentration is too low, and its passivation to quantum dot surface is not complete
Entirely, still having the not passivated defect in part can be quenched electron hole pair as complex centre;If the I2I in alcoholic solution2Concentration
It is too high, due to I2The characteristic of semiconductor of molecular layer, can reduce electron transport ability.
In above-mentioned steps S02, hole transmission layer is prepared on the patterned anode substrate, solution processing method can be used
Realize, including but not limited to spin coating.After using solution processing method deposition of hole transmission material, heated, it is molten to remove
Agent, forms compact film.Specific preferred, the anode grid substrate that will deposit has hole mobile material is placed on 150 DEG C of warm table
Heating 30 minutes, forms hole transmission layer.
In above-mentioned steps S03, quantum dot light-emitting film is deposited on the hole transport layer, can use conventional method reality
It is existing, such as realized using solution processing method, including but not limited to spin coating.
In above-mentioned steps S04, the I is deposited in a heated condition2Alcoholic solution, wherein, the heating temperature of the heating condition
Degree is preferably 60-150 DEG C, and the heating-up temperature can cause I-Its surface dangling bonds can be replaced or its room is supplemented, so that
Reach the purpose of passivation quantum dot surface defect.If the heating-up temperature is too low, the I2I in alcoholic solution2To quantum dot surface
Passivation is incomplete, still has the not passivated defect in part electron hole pair can be quenched as complex centre;If the heating temperature
Height is spent, quantum dot surface ligand can be destroyed so that quantum dot is largely reunited, influence its stability.
The embodiment of the present invention deposits the I on the quantum dot light emitting film2Alcoholic solution using solution processing method realize,
Including but not limited to spin coating.Specific preferred, the substrate that will deposit has quantum dot light emitting film is placed in 100 DEG C of thermal station,
I in drop2Alcoholic solution, is paved with whole quantum dot film surface, treats that cooling is removed in surface after being evaporated.
In above-mentioned steps S05, it is sequentially depositing electron transfer layer and negative electrode and can adopts on the passivation quantum dot light emitting layer
Realized with this area conventional method.Specifically, using solution processing method deposit electron transport material, including but not limited to spin coating,
Then heated, to remove solvent, formed compact film.It is specific preferred, the base for having electron transport material will be deposited
Piece is placed on 150 DEG C of warm table and heats 30 minutes, forms electron transfer layer.
The substrate that each functional layer will have been deposited is placed in evaporation storehouse by mask plate hot evaporation layer of metal silver or aluminium work
It is negative electrode.
It is further preferred that the embodiment of the present invention also includes preparing at least one of which in electron injecting layer, hole injection layer.
Specifically, before the hole transmission layer is deposited, one layer of hole injection layer is deposited on figure oxidation ITO surfaces;In deposition institute
Before stating negative electrode, one layer of electron injecting layer is deposited on the electron transport layer.
The preparation method of QLED provided in an embodiment of the present invention, one layer of I is deposited on quantum dot film surface2Alcoholic solution conduct
Passivation layer, by heating so that I-Its surface dangling bonds can be replaced or its room is supplemented, so as to reach passivation quantum
The purpose of point surface defect, and then the capture to electron hole is reduced, so as to increase effective combined efficiency, improve QLED devices effect
Rate.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the invention, it is all in essence of the invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (7)
1. a kind of QLED, it is characterised in that including the substrate, anode, hole transmission layer, the passivation quantum dot light emitting that set gradually
Layer, electron transfer layer and negative electrode, wherein, the passivation quantum dot light emitting layer is made up of passivation quantum dot, the passivation quantum dot
It is that the quantum dot after surface passivating treatment is carried out using iodine.
2. QLED as claimed in claim 1, it is characterised in that the thickness of the passivation quantum dot light emitting layer is 30-50nm.
3. QLED as claimed in claim 1 or 2, it is characterised in that also including in hole injection layer, electron injecting layer at least
One layer.
4. a kind of preparation method of QLED, comprises the following steps:
Patterned anode substrate and I are provided2Alcoholic solution;
Hole transmission layer is prepared on the patterned anode substrate;
Quantum dot light-emitting film is deposited on the hole transport layer;
Under heating condition, the I is deposited on the quantum dot light emitting film2Alcoholic solution, obtains being passivated quantum dot light emitting after being evaporated
Layer;
Electron transfer layer and negative electrode are sequentially depositing on the passivation quantum dot light emitting layer.
5. the preparation method of QLED as claimed in claim 4, it is characterised in that the I2I in alcoholic solution2Concentration is 4-20mg/
ml。
6. the preparation method of QLED as claimed in claim 4, it is characterised in that the heating-up temperature of the heating condition is 60-
150℃。
7. the preparation method of the QLED as described in claim 4-6 is any, it is characterised in that also including prepare electron injecting layer,
At least one of which in hole injection layer.
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CN201611208915.7A CN106784205B (en) | 2016-12-23 | 2016-12-23 | QLED and preparation method thereof |
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CN201611208915.7A CN106784205B (en) | 2016-12-23 | 2016-12-23 | QLED and preparation method thereof |
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CN106784205A true CN106784205A (en) | 2017-05-31 |
CN106784205B CN106784205B (en) | 2019-12-13 |
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ID=58919223
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108461590A (en) * | 2017-02-20 | 2018-08-28 | Tcl集团股份有限公司 | A kind of light emitting diode with quantum dots device and preparation method thereof |
CN112331779A (en) * | 2019-11-20 | 2021-02-05 | 广东聚华印刷显示技术有限公司 | Quantum dot light-emitting diode and preparation method thereof and quantum dot light-emitting layer passivation method |
Citations (3)
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---|---|---|---|---|
US20130019930A1 (en) * | 2011-07-20 | 2013-01-24 | Alliance For Sustainable Energy, Llc | Secondary Treatment of Films of Colloidal Quantum Dots for Optoelectronics and Devices Produced Thereby |
CN105070849A (en) * | 2015-07-14 | 2015-11-18 | Tcl集团股份有限公司 | Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method thereof |
US9324562B1 (en) * | 2014-11-12 | 2016-04-26 | Alliance For Sustainable Energy, Llc | Metal halide solid-state surface treatment for nanocrystal materials |
-
2016
- 2016-12-23 CN CN201611208915.7A patent/CN106784205B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130019930A1 (en) * | 2011-07-20 | 2013-01-24 | Alliance For Sustainable Energy, Llc | Secondary Treatment of Films of Colloidal Quantum Dots for Optoelectronics and Devices Produced Thereby |
US9324562B1 (en) * | 2014-11-12 | 2016-04-26 | Alliance For Sustainable Energy, Llc | Metal halide solid-state surface treatment for nanocrystal materials |
CN105070849A (en) * | 2015-07-14 | 2015-11-18 | Tcl集团股份有限公司 | Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method thereof |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108461590A (en) * | 2017-02-20 | 2018-08-28 | Tcl集团股份有限公司 | A kind of light emitting diode with quantum dots device and preparation method thereof |
CN112331779A (en) * | 2019-11-20 | 2021-02-05 | 广东聚华印刷显示技术有限公司 | Quantum dot light-emitting diode and preparation method thereof and quantum dot light-emitting layer passivation method |
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