CN106784212B - QLED and preparation method thereof - Google Patents
QLED and preparation method thereof Download PDFInfo
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- CN106784212B CN106784212B CN201611159253.9A CN201611159253A CN106784212B CN 106784212 B CN106784212 B CN 106784212B CN 201611159253 A CN201611159253 A CN 201611159253A CN 106784212 B CN106784212 B CN 106784212B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 129
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 118
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000002096 quantum dot Substances 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 239000007864 aqueous solution Substances 0.000 claims abstract description 6
- 230000005540 biological transmission Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- 229910000026 rubidium carbonate Inorganic materials 0.000 claims description 2
- 150000001336 alkenes Chemical class 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 87
- 238000000151 deposition Methods 0.000 description 12
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- -1 oxygen Graphite alkene Chemical class 0.000 description 3
- 238000010129 solution processing Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 238000001215 fluorescent labelling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of QLED, including substrate, anode, graphene oxide layer, quantum dot light emitting layer, graphene oxide derivative layer and the cathode being cascading, wherein, the graphene oxide derivative layer is made of graphene oxide derivative, and the graphene oxide derivative is the carboxylic protons in graphene oxide by the partly or entirely replaced graphene oxide derivative of metallic element.The preparation method of the QLED, comprising the following steps: provide substrate, on the substrate deposition anode, on the anode deposited oxide graphene aqueous solution, form graphene oxide layer；Quantum dot light emitting layer is deposited in the graphene oxide layer, the deposited oxide Graphene derivative on the quantum dot light emitting layer forms graphene oxide derivative layer；Cathode is deposited on the graphene oxide derivative layer.
Description
Technical field
The invention belongs to technical field of flat panel display more particularly to a kind of QLED and preparation method thereof.
Background technique
The optico-electronic properties that semiconductor-quantum-point has size adjustable humorous, are widely used in light emitting diode, solar energy
Battery and biological fluorescent labelling field.By development in more than 20 years, quantum dot synthetic technology achieved significant achievement, can be with
Synthesis obtains the CdS quantum dots of various high quality, and photoluminescence efficiency can achieve 85% or more.Due to quantum dot
Have the characteristics that the luminous of dimension adjustable, the line width that shines, photoluminescence efficiency height and thermal stability, is luminous with quantum dot
The light emitting diode with quantum dots (QLED) of layer becomes next-generation display and the solid-state lighting light source of great potential.Quantum dot light emitting two
Pole pipe is obtained in illumination and display field in recent years because having many advantages, such as high brightness, low-power consumption, wide colour gamut, easy processing
Extensive concern and research.By the development of many years, QLED technology obtains huge development.From the documents and materials of open report
From the point of view of, red and green QLED external quantum efficiency highest at present alreadys exceed or close to 20%, shows red green QLED's
The limit of the internal quantum efficiency actually already close to 100%.However, the blue indispensable as the full-color display of high-performance
QLED is far below red green QLED, to limit at present whether in electro-optical efficiency or on service life
Application of the QLED in terms of full-color display.
Summary of the invention
The purpose of the present invention is to provide a kind of QLED and preparation method thereof, it is intended to it solves in existing full-color display QLED,
Since blue QLED electro-optical efficiency is bad, the problem of influencing full-color display QLED device efficiency.
The invention is realized in this way a kind of QLED, including be cascading substrate, anode, graphene oxide layer,
Quantum dot light emitting layer, graphene oxide derivative layer and cathode, wherein the graphene oxide derivative layer is by graphene oxide
Derivative is made, and the graphene oxide derivative is that the carboxylic protons in graphene oxide are partly or entirely replaced by metallic element
Graphene oxide derivative after changing.
And a kind of preparation method of QLED, comprising the following steps:
Substrate is provided, on the substrate deposition anode, on the anode deposited oxide graphene aqueous solution, forms oxygen
Graphite alkene layer；
Quantum dot light emitting layer is deposited in the graphene oxide layer, the deposited oxide graphite on the quantum dot light emitting layer
Ene derivative forms graphene oxide derivative layer；
Cathode is deposited on the graphene oxide derivative layer.
QLED provided by the invention improves electron-transport and sky using the graphene oxide composite material of the same system simultaneously
Cave transmission performance, to improve the incident photon-to-electron conversion efficiency of QLED device, the photoelectric conversion of especially raising blue light QLED device is imitated
Rate.Specifically, the graphene oxide in the graphene oxide layer can promote the transmission in hole, and the graphene oxide spreads out
Graphene oxide derivative in biosphere forms dipole moment since the carboxylic protons at its edge are replaced by metallic element, changes
The electronic structure of graphene oxide derivative, and then assign the graphene oxide derivative layer excellent electron-transporting
Energy.And by using the graphene oxide composite material of the same system to improve hole transport and electronics simultaneously in a QLED device
Transmission performance, it is possible to reduce influence of the interface to QLED device improves QLED device performance.
The preparation method of QLED provided by the invention, the graphene oxide layer, the graphene oxide derivative layer are equal
It can be prepared using solwution method, method is easy to operate, mature controllable, it is easy to accomplish industrialization.
Detailed description of the invention
Fig. 1 is QLED structural schematic diagram provided in an embodiment of the present invention；
Fig. 2 is QLED energy band schematic diagram provided in an embodiment of the present invention.
Specific embodiment
In order to which technical problems, technical solutions and advantageous effects to be solved by the present invention are more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain
The present invention is not intended to limit the present invention.
In conjunction with Fig. 1, Fig. 2, the embodiment of the invention provides a kind of QLED, including be cascading substrate 1, anode 2,
Graphene oxide layer 3, quantum dot light emitting layer 5, graphene oxide derivative layer 7 and cathode 8, as shown in Figure 1, wherein the oxygen
Graphite ene derivative layer 7 is made of graphene oxide derivative, and the graphene oxide derivative is in graphene oxide
Carboxylic protons are by the partly or entirely replaced graphene oxide derivative of metallic element.
Specifically, the graphene oxide layer 3 is made of graphene oxide (GO) in the embodiment of the present invention, can promote
Into the transmission in hole.The graphene oxide derivative layer 7 is made of graphene oxide derivative, and the graphene oxide spreads out
Biology is the carboxylic protons in graphene oxide by the partly or entirely replaced graphene oxide derivative of metallic element.Due to
The carboxylic protons at the carboxylic protons especially edge in graphene oxide are replaced by metallic element, are formed dipole moment, are changed oxygen
The electronic structure of graphite ene derivative, and then assign the graphene oxide derivative layer 7 excellent electronic transmission performance.
Preferably, the graphene oxide derivative includes at least one of GO-Cs, GO-Rb.Specifically, the GO-
The graphite oxide that Cs is obtained after being replaced for the proton of graphene oxide carboxyl (- COOH), particularly edge carboxyl (- COOH) by Cs
Ene derivative, the GO-Rb are replaced for the proton of graphene oxide carboxyl (- COOH), particularly edge carboxyl (- COOH) by Rb
The graphene oxide derivative obtained afterwards.The preferred graphene oxide derivative, metallic element are conducive to graphene oxide
Therefore the substitution or displacement of carboxylic protons have better electronic transmission performance.
Preferably, the graphene oxide layer 3 with a thickness of 30-50nm.If the thickness mistake of the graphene oxide layer 3
It is thin, it is limited to the raising of hole transport performance, or even hole transport performance cannot be improved.Since the mobility in hole is limited,
If the thickness of the graphene oxide layer 3 is blocked up, will lead to hole and be also not migrated into the graphene oxide layer 3 just has major part
Quenching；And if the too thick light transmittance that also results in of the graphene oxide layer 3 reduces.
Preferably, the graphene oxide derivative layer 7 with a thickness of 30-60nm.If the graphene oxide derivative
The thickness of layer 7 is excessively thin, limited to the raising of electronic transmission performance, or even cannot improve electronic transmission performance.Due to electronics
Mobility is limited, if the thickness of the graphene oxide derivative layer 7 is blocked up, will lead to electronics and is also not migrated into the oxidation stone
Black ene derivative layer 7 just has most of quenching；And if the too thick light transmittance that also results in of the graphene oxide derivative layer 7 drops
It is low.
On the basis of the above embodiments, it is preferred that the QLED further includes hole transmission layer 4, in electron transfer layer 6
It is at least one layer of.
As particular preferred embodiment, as shown in Fig. 2, the QLED includes the substrate 1 being cascading, anode 2, oxygen
Graphite alkene layer 3, hole transmission layer 4, quantum dot light emitting layer 5, electron transfer layer 6, graphene oxide derivative layer 7 and cathode 8,
Wherein, the graphene oxide derivative layer 7 is made of at least one of GO-Cs, GO-Rb.
In above-described embodiment, the selection of the substrate 1 is not limited strictly, can use hard substrate, such as glass substrate,
Flexible base board can also be used.
The anode 2 can be ITO, certainly, without being limited thereto.
The hole mobile material of the hole transmission layer 4 can use conventional hole transport material, including but not limited to
PEDOT:PSS, the hole transmission layer 4 with a thickness of 30-60nm.
The quantum dot light emitting layer 5 can be made of conventional quantum dot light emitting material, the quantum dot light emitting layer 5
With a thickness of 10-100nm.
The electron transport material of the electron transfer layer 6 can be using conventional electron transport material, including but not limited to n
Type zinc oxide.The electron transfer layer 6 with a thickness of 10-100nm.
The cathode 8 can be using conventional cathode material preparation, including metallic silver or metallic aluminium.The thickness of the cathode 8
Degree is 60-120nm, more preferably 100nm.
QLED provided in an embodiment of the present invention is passed using the graphene oxide composite material of the same system to improve electronics simultaneously
Defeated and hole transport performance especially improves the photoelectricity of blue light QLED device to improve the incident photon-to-electron conversion efficiency of QLED device
Transformation efficiency.Specifically, the graphene oxide in the graphene oxide layer can promote the transmission in hole, and the oxidation stone
Graphene oxide derivative in black ene derivative layer forms dipole since the carboxylic protons at its edge are replaced by metallic element
Square changes the electronic structure of graphene oxide derivative, and then assigns the graphene oxide derivative layer excellent electronics
Transmission performance.And by using the graphene oxide composite material of the same system to improve hole transport simultaneously in a QLED device
And electronic transmission performance, it is possible to reduce influence of the interface to QLED device improves QLED device performance.
QLED described in the embodiment of the present invention can be prepared by following methods.
And a kind of preparation method of QLED, comprising the following steps:
S01. substrate is provided, on the substrate deposition anode, on the anode deposited oxide graphene aqueous solution, shape
At graphene oxide layer；
S02. quantum dot light emitting layer is deposited in the graphene oxide layer, the deposited oxide on the quantum dot light emitting layer
Graphene derivative forms graphene oxide derivative layer；
S03. cathode is deposited on the graphene oxide derivative layer.
Specifically, deposition anode forms anode grid substrate such as ito substrate on the substrate in above-mentioned steps S01.In order to mention
The adhesive ability of high deposited material, it is preferred that further include to the anode base before depositing the graphene oxide water solution
Plate carries out cleaning treatment, the method for the cleaning treatment are as follows: the anode grid substrate is respectively placed in acetone in order, washing lotion, is gone
It is cleaned by ultrasonic in ionized water and isopropanol, each ultrasonic time is 10-20min, concretely 15min, to ultrasonic clear
After the completion of washing, the anode grid substrate is placed in cleaning oven and is dried for standby.
After anode grid substrate is dry, the deposited oxide graphene aqueous solution in the anode grid substrate, and heated,
To remove solvent, compact film is formed.It is specific preferred, the anode grid substrate for being deposited with graphene oxide water solution is placed in 150
DEG C warm table on heat 15 minutes, formed graphene oxide layer.
In above-mentioned steps S02, quantum dot light emitting layer is deposited in the graphene oxide layer can be real using conventional method
Show, preferably solution processing method.
Further, it is derivative to form graphene oxide for the deposited oxide Graphene derivative on the quantum dot light emitting layer
Nitride layer, and the substrate after deposited oxide Graphene derivative is heated, to remove solvent, form the oxidation of dense film
Graphene derivative layer.It is specific preferred, the substrate for being deposited with graphene oxide derivative material is placed in 80 DEG C of warm table
Upper heating 30 minutes, forms graphene oxide derivative layer.
In the embodiment of the present invention, it is preferred that the graphene oxide derivative the preparation method comprises the following steps:
Graphene oxide water solution is provided, Cs is added in the graphene oxide water solution2CO3And/or Rb2CO3It carries out
Heat treatment, obtain in graphene oxide carboxylic protons by Cs and/or Rb the graphene oxide derivative GO-Cs replaced and/or
GO-Rb。
It is further preferred that the temperature of the heat treatment is 100-400 DEG C, heating time 0.5-3h.It should be appreciated that
When graphene oxide derivative difference, the temperature and time of heat treatment is different.
On that basi of the above embodiments, it is preferred that the preparation method of QLED of the embodiment of the present invention further includes preparing electronics biography
At least one layer in defeated layer, hole transmission layer.
It is specific preferred, it further include deposition of hole transport layer before depositing quantum dot light emitting layer.The hole transmission layer
Using conventional method realization, preferably solution processing method.Substrate after deposition of hole transmission material is heated, to go
Except solvent, the hole transmission layer of dense film is formed.It is specific preferred, the substrate for being deposited with hole mobile material is placed in 150 DEG C
Warm table on heat 15 minutes, formed hole transmission layer.
It is specific preferred, it further include deposition electron transfer layer before deposited oxide Graphene derivative layer.The electronics
Transport layer is using conventional method realization, preferably solution processing method.Substrate after deposition electron transport material is carried out at heating
Reason, to remove solvent, forms the electron transfer layer of dense film.It is specific preferred, the substrate for being deposited with electron transport material is set
In heating 30 minutes on 80 DEG C of warm table, electron transfer layer is formed.
In above-mentioned steps S03, this field routine side can be passed through by depositing cathode on the graphene oxide derivative layer
Method is realized, specifically, the substrate for having deposited each functional layer is placed in vapor deposition storehouse through mask plate hot evaporation cathode, QLED device
Preparation is completed.
It further, further include that processing is packaged to QLED device.
As a preferred embodiment, the preparation method of the QLED the following steps are included:
Substrate is provided, on the substrate deposition anode, on the anode deposited oxide graphene aqueous solution, forms oxygen
Graphite alkene layer；
Hole transmission layer, quantum dot light emitting layer and electron transfer layer are sequentially depositing in the graphene oxide layer, in institute
Deposited oxide Graphene derivative on electron transfer layer is stated, graphene oxide derivative layer is formed；
Cathode is deposited on the graphene oxide derivative layer.
The preparation method of QLED provided in an embodiment of the present invention, the graphene oxide layer, the graphene oxide are derivative
Nitride layer can be prepared using solwution method, and method is easy to operate, mature controllable, it is easy to accomplish industrialization.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (9)
1. a kind of QLED, which is characterized in that including substrate, anode, graphene oxide layer, the quantum dot light emitting being cascading
Layer, graphene oxide derivative layer and cathode, wherein the material of the graphene oxide derivative layer is derivative for graphene oxide
Object, and the graphene oxide derivative includes at least one of GO-Cs, GO-Rb.
2. QLED as described in claim 1, which is characterized in that the graphene oxide layer with a thickness of 30-50nm.
3. QLED as described in claim 1, which is characterized in that the graphene oxide derivative layer with a thickness of 30-60nm.
4. QLED a method according to any one of claims 1-3, which is characterized in that further include hole transmission layer, in electron transfer layer
It is at least one layer of.
5. QLED as described in claim 1, which is characterized in that between the graphene oxide layer and the quantum dot light emitting layer
Further include hole transmission layer, further includes electron-transport between the quantum dot light emitting layer and the graphene oxide derivative layer
Layer.
6. a kind of preparation method of QLED, comprising the following steps:
Substrate is provided, on the substrate deposition anode, on the anode deposited oxide graphene aqueous solution, forms oxidation stone
Black alkene layer；
Quantum dot light emitting layer is deposited in the graphene oxide layer, deposited oxide graphene spreads out on the quantum dot light emitting layer
Biology forms graphene oxide derivative layer, and the graphene oxide derivative includes at least one of GO-Cs, GO-Rb；
Cathode is deposited on the graphene oxide derivative layer.
7. the preparation method of QLED as claimed in claim 6, which is characterized in that the preparation side of the graphene oxide derivative
Method are as follows:
Graphene oxide water solution is provided, Cs is added in the graphene oxide water solution2CO3And/or Rb2CO3It is heated
Processing, obtains the graphene oxide derivative GO-Cs and/or GO- that carboxylic protons are replaced by Cs and/or Rb in graphene oxide
Rb。
8. the preparation method of QLED as claimed in claim 7, which is characterized in that the temperature of the heat treatment is 100-400
DEG C, heating time 0.5-3h.
9. as QLED as claimed in claim 6 to 8 preparation method, which is characterized in that further include prepare electron transfer layer,
At least one layer in hole transmission layer.
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| CN109326726B (en) | 2017-07-31 | 2021-03-16 | Tcl科技集团股份有限公司 | QLED device and preparation method thereof |
| CN111384264B (en) * | 2018-12-29 | 2022-01-18 | Tcl科技集团股份有限公司 | Composite film, quantum dot light-emitting diode and preparation method thereof |
| CN111384277B (en) * | 2018-12-29 | 2022-01-18 | Tcl科技集团股份有限公司 | Composite material, quantum dot light-emitting diode and preparation method thereof |
| CN112154550A (en) * | 2019-03-05 | 2020-12-29 | 株式会社东芝 | Graphene-containing film, method for producing same, graphene-containing film laminate, and photoelectric conversion element |
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| CN105826483A (en) * | 2016-05-04 | 2016-08-03 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN106159102A (en) * | 2016-09-28 | 2016-11-23 | Tcl集团股份有限公司 | Lamination QLED device and preparation method thereof |
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