CN109390149A - The production method of the making apparatus and thin film capacitor of multiple field stacked structure - Google Patents
The production method of the making apparatus and thin film capacitor of multiple field stacked structure Download PDFInfo
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- CN109390149A CN109390149A CN201710683235.9A CN201710683235A CN109390149A CN 109390149 A CN109390149 A CN 109390149A CN 201710683235 A CN201710683235 A CN 201710683235A CN 109390149 A CN109390149 A CN 109390149A
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- baking
- insulating materials
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- 239000003990 capacitor Substances 0.000 title claims abstract description 54
- 239000010409 thin film Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 172
- 238000000465 moulding Methods 0.000 claims abstract description 110
- 239000004020 conductor Substances 0.000 claims abstract description 91
- 239000011810 insulating material Substances 0.000 claims abstract description 90
- 238000007740 vapor deposition Methods 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000007769 metal material Substances 0.000 claims description 118
- 239000002245 particle Substances 0.000 claims description 66
- 239000012774 insulation material Substances 0.000 claims description 58
- 238000001704 evaporation Methods 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 16
- 238000009826 distribution Methods 0.000 claims description 11
- 238000007493 shaping process Methods 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000000084 colloidal system Substances 0.000 description 6
- 238000003754 machining Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/306—Stacked capacitors made by thin film techniques
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention discloses the production methods of a kind of making apparatus of multiple field stacked structure and thin film capacitor.The production method of thin film capacitor includes: to provide a bearing substrate；Multiple first material layers and multiple second material layers are formed, multiple first material layers and multiple second material layers are alternately stacked on bearing substrate, to form a multiple field stacked structure；And two end-electrode structures are formed, to be respectively coated by two opposite side ends of multiple field stacked structure.Each first material layer is formed by a first material layer molding equipment, and each second material layer is formed by a second material layer molding equipment.One of both first material layer molding equipment and second material layer molding equipment are evaporated device altogether.Whereby, evaporated device can provide insulating materials and conductive material simultaneously by way of total vapor deposition altogether, to form one of them layer of both first material layer and second material layer.
Description
Technical field
The present invention relates to the production methods of a kind of making apparatus of multiple field stacked structure and thin film capacitor, especially
It is related to a kind of production method for promoting the making apparatus and thin film capacitor of the multiple field stacked structure of dielectric constant.
Background technique
Capacitor has been widely used for consumer electrical home appliances, computer motherboard and its periphery, power supply unit, has led to
The basic module of product and automobile etc. is interrogated, its main function includes: filtering, bypass, rectification, coupling, decoupling, phase inversion etc..It is
One of indispensable component in electronic product.Capacitor has different kenels according to different material and purposes.Including aluminum
Electrolytic capacitor, tantalum matter electrolytic capacitor, laminated ceramic capacitor, thin-film capacitor etc..Thin film capacitor produced by the prior art
Overall structure is excessively complicated and needs to be improved, and the dielectric constant that thin film capacitor produced by the prior art can be provided
It is too low and need to be improved.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of multiple field stacked structure in view of the deficiencies of the prior art
Making apparatus and thin film capacitor production method.
In order to solve the above technical problems, a wherein technical solution of the present invention is to provide a kind of thin-film electro
The production method of container comprising: a bearing substrate is provided；Multiple first material layers and multiple second material layers are formed,
In, multiple first material layers and multiple second material layers are alternately stacked on the bearing substrate, to form more than one
Laminar stacked structure；And two end-electrode structures are formed, to be respectively coated by two opposite side ends of the multiple field stacked structure
Portion.Wherein, each described first material layer is formed by a first material layer molding equipment, each described second material layer
It is formed by a second material layer molding equipment, and the first material layer molding equipment and the second material layer molding equipment
One of the two is to have evaporated device altogether；Wherein, the evaporated device altogether provides insulation material simultaneously by way of total vapor deposition
Material and conductive material, to form one of them layer of both the first material layer and the second material layer.
Further, the first material layer is a metal material layer, and the second material layer is to be mixed into inside one
The insulation material layer of the conductive particle of multiple random distributions, wherein the first material layer molding equipment is used to form institute for one
The metal material layer molding equipment of metal material layer is stated, the second material layer molding equipment is the evaporated device altogether, described
Insulation material layer insulating materials as provided by the evaporated device altogether is formed, and the conductive particle is by the total steaming
The conductive material provided by coating apparatus is formed.
Further, the metal material layer molding equipment includes one for providing the metal material moulding of metal material
Module and one adjacent to the metal material moulding module the first baking module, and the metal material is dried by described first
The baking of grilled mold block and form the metal material layer, wherein the evaporated device altogether includes one being used to provide the described insulation material
The insulating materials vapor deposition module of material, one are used to provide the described the conductive material vapor deposition module and one of conductive material adjacent to described exhausted
The second baking module of module and conductive material vapor deposition module is deposited in edge material, and the insulating materials is dried by described second
The baking of grilled mold block and form the insulation material layer, and the conductive material passes through the baking shape of second baking module
At the conductive particle, wherein the size of the conductive particle and multiple conductive particles account for the insulation material layer
Percentage is determined by the insulating materials and evaporation capacity of the conductive material in total vapor deposition.
Further, the metal material layer molding equipment includes one for shaping the metal material of the metal material layer
Expect forming module, and it is described altogether evaporated device include one for shape the insulation material layer insulating materials vapor deposition module and
One for shaping the conductive material vapor deposition module of the conductive particle, wherein the size of the conductive particle and multiple described
Conductive particle accounts for the percentage of the insulation material layer by the insulating materials and evaporation of the conductive material in total vapor deposition
Amount is determined.
Further, the first material layer is the insulating materials that the conductive particle of multiple random distributions is mixed into inside one
Layer, and the second material layer is a metal material layer, wherein the first material layer molding equipment is that the total vapor deposition is set
Standby, insulation material layer insulating materials as provided by the evaporated device altogether is formed, and the conductive particle is by institute
It states the conductive material provided by total evaporated device to be formed, and the second material layer molding equipment is used to form institute for one
State the metal material layer molding equipment of metal material layer.
Further, the metal material layer molding equipment includes one for providing the metal material moulding of metal material
Module and one adjacent to the metal material moulding module the first baking module, and the metal material is dried by described first
The baking of grilled mold block and form the metal material layer, wherein the evaporated device altogether includes one being used to provide the described insulation material
The insulating materials vapor deposition module of material, one are used to provide the described the conductive material vapor deposition module and one of conductive material adjacent to described exhausted
The second baking module of module and conductive material vapor deposition module is deposited in edge material, and the insulating materials is dried by described second
The baking of grilled mold block and form the insulation material layer, and the conductive material passes through the baking shape of second baking module
At the conductive particle, wherein the size of the conductive particle and multiple conductive particles account for the insulation material layer
Percentage is determined by the insulating materials and evaporation capacity of the conductive material in total vapor deposition.
Further, the metal material layer molding equipment includes one for shaping the metal material of the metal material layer
Expect forming module, and it is described altogether evaporated device include one for shape the insulation material layer insulating materials vapor deposition module and
One for shaping the conductive material vapor deposition module of the conductive particle, wherein the size of the conductive particle and multiple described
Conductive particle accounts for the percentage of the insulation material layer by the insulating materials and evaporation of the conductive material in total vapor deposition
Amount is determined.
In order to solve the above technical problems, an other technical solution of the present invention is to provide a kind of multiple field
The making apparatus of stacked structure comprising: a rotatable plummer, a first material layer molding equipment and a second material layer
Molding equipment.The rotatable plummer is for carrying a bearing substrate.It can described in the first material layer molding equipment is neighbouring
It rotates plummer and is arranged.The second material layer molding equipment is arranged adjacent to the rotatable plummer.Wherein, Duo Ge
One material layer is formed by the first material layer molding equipment, and multiple second material layers are by the second material layer molding equipment
It is formed, and one of both described first material layer molding equipment and the second material layer molding equipment are vapor deposition altogether
Equipment.Wherein, the evaporated device altogether provides insulating materials and conductive material simultaneously by way of total vapor deposition, described in being formed
One of them layer of both first material layer and the second material layer.Wherein, multiple first material layers and multiple described the
Two material layers are alternately stacked on the bearing substrate, to form the multiple field stacked structure.
Further, the first material layer is a metal material layer, and the second material layer is to be mixed into inside one
The insulation material layer of the conductive particle of multiple random distributions, wherein the first material layer molding equipment is used to form institute for one
The metal material layer molding equipment of metal material layer is stated, the second material layer molding equipment is the evaporated device altogether, described
Insulation material layer insulating materials as provided by the evaporated device altogether is formed, and the conductive particle is by the total steaming
The conductive material provided by coating apparatus is formed, wherein the metal material layer molding equipment includes one for providing gold
Belong to material metal material moulding module and one adjacent to the metal material moulding module the first baking module, and the gold
Belong to material and the metal material layer formed by the baking of first baking module, wherein the evaporated device altogether includes
One is used to provide the described the insulating materials vapor deposition module of insulating materials, a conductive material for being used to provide the described conductive material is deposited
Module and one adjacent to the insulating materials vapor deposition module and the conductive material vapor deposition module the second baking module, it is described absolutely
Edge material forms the insulation material layer by the baking of second baking module, and the conductive material passes through described the
The baking of two baking modules and form the conductive particle, wherein the size of the conductive particle and described conductive multiple
The percentage that grain accounts for the insulation material layer is determined by the insulating materials and evaporation capacity of the conductive material in total vapor deposition
It is fixed.
Further, the first material layer is the insulating materials that the conductive particle of multiple random distributions is mixed into inside one
Layer, and the second material layer is a metal material layer, wherein the first material layer molding equipment is that the total vapor deposition is set
Standby, insulation material layer insulating materials as provided by the evaporated device altogether is formed, and the conductive particle is by institute
It states the conductive material provided by total evaporated device to be formed, and the second material layer molding equipment is used to form institute for one
State the metal material layer molding equipment of metal material layer, wherein the metal material layer molding equipment includes one for providing gold
Belong to material metal material moulding module and one adjacent to the metal material moulding module the first baking module, and the gold
Belong to material and the metal material layer formed by the baking of first baking module, wherein the evaporated device altogether includes
One is used to provide the described the insulating materials vapor deposition module of insulating materials, a conductive material for being used to provide the described conductive material is deposited
Module and one adjacent to the insulating materials vapor deposition module and the conductive material vapor deposition module the second baking module, it is described absolutely
Edge material forms the insulation material layer by the baking of second baking module, and the conductive material passes through described the
The baking of two baking modules and form the conductive particle, wherein the size of the conductive particle and described conductive multiple
The percentage that grain accounts for the insulation material layer is determined by the insulating materials and evaporation capacity of the conductive material in total vapor deposition
It is fixed.
A wherein beneficial effect of the invention is, a kind of making apparatus of multiple field stacked structure provided by the present invention
And the production method of thin film capacitor, it can be by the way that " the first material layer molding equipment and the second material layer form
One of both equipment is evaporated device altogether " and " offer is exhausted simultaneously by way of total vapor deposition for the evaporated device altogether
The technical solution of edge material and conductive material ", to form one of both described first material layer and the second material layer
Layer, and multiple first material layers and multiple second material layers are alternately stacked on the bearing substrate, to be formed
One multiple field stacked structure.
Be further understood that feature and technology contents of the invention to be enabled, please refer to below in connection with it is of the invention specifically
Bright and attached drawing, however provided attached drawing is merely provided for reference and description, is not intended to limit the present invention.
Detailed description of the invention
Fig. 1 is the flow chart of the production method of thin film capacitor of the invention.
Fig. 2 is the schematic diagram of the making apparatus of the multiple field stacked structure of first embodiment of the invention.
Fig. 3 is the processing signal that metal material is formed in the production method of the thin film capacitor of first embodiment of the invention
Figure.
Fig. 4 is the processing signal that metal material layer is formed in the production method of the thin film capacitor of first embodiment of the invention
Figure.
Fig. 5 be first embodiment of the invention thin film capacitor production method in formed first part insulating materials with
The machining sketch chart of conductive material.
Fig. 6 is the insulating materials that second part is formed in the production method of the thin film capacitor of first embodiment of the invention
Machining sketch chart.
Fig. 7 is to form inside in the production method of the thin film capacitor of first embodiment of the invention to be mixed into multiple random distributions
Conductive particle insulation material layer machining sketch chart.
Fig. 8 is the schematic diagram of the thin film capacitor of first embodiment of the invention.
Fig. 9 is the schematic diagram of one of thin film capacitor encapsulating structure of first embodiment of the invention.
Figure 10 is the schematic diagram of another thin film capacitor encapsulating structure of first embodiment of the invention.
Figure 11 is the schematic diagram of the making apparatus of the multiple field stacked structure of second embodiment of the invention.
Figure 12 is the insulating materials that first part is formed in the production method of the thin film capacitor of second embodiment of the invention
With the machining sketch chart of conductive material.
Figure 13 is the insulating materials that second part is formed in the production method of the thin film capacitor of second embodiment of the invention
Machining sketch chart.
Figure 14 is to form inside in the production method of the thin film capacitor of second embodiment of the invention to be mixed into multiple random points
The machining sketch chart of the insulation material layer of the conductive particle of cloth.
Figure 15 is the processing signal that metal material is formed in the production method of the thin film capacitor of second embodiment of the invention
Figure.
Figure 16 is that the processing of formation metal material layer in the production method of the thin film capacitor of second embodiment of the invention is shown
It is intended to.
Specific embodiment
Be below illustrated by particular specific embodiment it is presently disclosed in relation to the " production of multiple field stacked structure
The embodiment of the production method of equipment and thin film capacitor ", those skilled in the art can be by disclosed in this specification
Hold and understands advantages of the present invention and effect.The present invention can be implemented or be applied, this theory by other different specific embodiments
Every details in bright book may be based on different viewpoints and application, carry out various modifications and becomes under without departing substantially from design of the invention
More.In addition, attached drawing of the invention is only simple schematically illustrate, not according to the description of actual size, state in advance.Implementation below
The relevant technologies content of the invention, but the guarantor that disclosure of that is not intended to limit the invention will be explained in further detail in mode
Protect range.
First embodiment
It please referring to shown in Fig. 1 to Fig. 8, first embodiment of the invention provides a kind of making apparatus of multiple field stacked structure,
Comprising: a rotatable plummer R, a first material layer molding equipment D1 and a second material layer molding equipment D2.
More specifically, rotatable plummer R can be used to carry a bearing substrate 10, first material layer molding equipment D1
It is arranged adjacent to rotatable plummer R, and second material layer molding equipment D2 is arranged adjacent to rotatable plummer R.In addition,
Multiple first material layer L1 can be formed by first material layer molding equipment D1, and multiple second material layer L2 can be by second material layer
Molding equipment D2 is formed, and one of both first material layer molding equipment D1 and second material layer molding equipment D2 are
Evaporated device V altogether.In addition, evaporated device V can provide simultaneously insulating materials M2 and conductive material by way of total vapor deposition altogether
M3, to form one of them layer of both first material layer L1 and second material layer L2.Whereby, multiple first material layer L1 with it is multiple
Second material layer L2 can be alternately stacked on bearing substrate 10, to form multiple field stacked structure 1 (as shown in Figure 8).
For example, a kind of making apparatus of multiple field stacked structure provided by the present invention can be placed on a vacuum
In the environment of operate or antivacuum environment under operate.
It please refers to shown in Fig. 1 to Fig. 8, the present invention provides a kind of production method of thin film capacitor, under at least may include
Example step: firstly, providing a bearing substrate 10 (S100)；Then, multiple first material layer L1 and multiple second materials are formed
Layer L2, wherein multiple first material layer L1 and multiple second material layer L2 are alternately stacked on bearing substrate 10, to form more than one
Laminar stacked structure 1 (S102)；Then, two end-electrode structures 2 are formed, to be respectively coated by the two-phase of multiple field stacked structure 1
Toss about end 20P (S104), to complete the production (as shown in Figure 8) of thin film capacitor Z.For example, bearing substrate 10 can be
One electrically-conductive backing plate as made by any conductive material (such as copper, aluminium etc.) or one by any insulating materials (such as
PMMA, PP, PET etc.) made by insulating substrate.
More specifically, each first material layer L1 can be formed by a first material layer molding equipment D1, each
A second material layer L2 can be formed by a second material layer molding equipment D2, and first material layer molding equipment D1 and second
One of both material layer molding equipment D2 are evaporated device V altogether.In addition, evaporated device V can be by the side that is deposited altogether altogether
Formula provides insulating materials M2 and conductive material M3 simultaneously, to form one of both first material layer L1 and second material layer L2
Layer.
For example, first material layer L1 can be a metal material layer 11, and second material layer L2 can be mixed for an inside
Enter the insulation material layer 12 of the conductive particle 120 of multiple random distributions, that is to say, that multiple conductive particles 120 are to divide at random
The mode of cloth forms and arrangement heterogeneous is presented.In addition, first material layer molding equipment D1 can be used to form metal for one
The metal material layer molding equipment F of material layer 11, and second material layer molding equipment D2 can be evaporated device V altogether.In addition, absolutely
Edge material layer 12 can the insulating materials M2 as provided by total evaporated device V formed, and conductive particle 120 can by it is total vapor deposition set
Conductive material M3 provided by standby V is formed.Significantly, since the inside of each insulation material layer 12 be mixed with it is multiple
Conductive particle 120, so being able to ascend the dielectric coefficient or dielectric constant of thin film capacitor Z and its multiple field stacked structure 1.
For example, metal material layer molding equipment F includes one for providing the metal material moulding mould of metal material M1
The first baking module F2 of block F1 and an adjacent metal material forming module F1, and metal material M1 can pass through the first baking
The baking of module F2 and form metal material layer 11.More specifically, cooperate shown in Fig. 2, Fig. 3 and Fig. 4, firstly, metal
Material M1 (such as copper, aluminium etc.) can first pass through metal material moulding module F1 and be formed on bearing substrate 10, then metal material
Material M1 forms metal material layer 11 by the baking of the first baking module F2 again.It is worth noting that, metal material moulding mould
Block F1 can provide metal material by modes such as coating (coating), spraying (spraying) or printings (printing)
M1, however the present invention is not illustrated with this and is limited.
For example, evaporated device V includes one for providing insulating materials vapor deposition module V1, a use of insulating materials M2 altogether
It is steamed in the conductive material vapor deposition module V2 and one for providing conductive material M3 adjacent to insulating materials vapor deposition module V1 and conductive material
Plate the second baking module V3 of module V2.In addition, insulating materials M2 can form insulation by the baking of the second baking module V3
Material layer 12, and conductive material M3 can form conductive particle 120 by the baking of the second baking module V3.Further to
Say, cooperate Fig. 2 and Fig. 5 to Fig. 7 shown in, firstly, first part insulating materials M2 (such as PMMA, PP, PET, mylar,
Polystyrene, polycarbonate, acrylate etc.) metal material can be formed in by insulating materials vapor deposition module V1
On layer 11, and conductive material M3 (such as copper, aluminium, indium etc.) can be deposited module V2 by conductive material and be formed in insulating materials
On M2；Then, the insulation that module V1 is formed in first part is deposited by insulating materials again in the insulating materials M2 of second part
To cover conductive material M3 on material M2；Finally, insulating materials M2 can form insulation by the baking of the second baking module V3
Material layer 12, and conductive material M3 can form conductive particle 120 by the baking of the second baking module V3.However, this hair
Bright do not illustrated with this is limited.
It is noted that shown in cooperation Fig. 6 and Fig. 7, " size of conductive particle 120 " and " multiple conductive particles 120
Account for the percentage of insulation material layer 12 " it can be by insulating materials M2 and evaporation capacity of the conductive material M3 in total vapor deposition
(evaporation) it is determined.For example, the opening area size for containing the evaporating dish of insulating materials M2 will affect insulation material
Expect evaporation capacity of the M2 in total vapor deposition, and the opening area size for containing the evaporating dish of conductive material M3 will affect conductive material
Evaporation capacity of the M3 in total vapor deposition.Furthermore the ratio of the insulating materials M2 and conductive material M3 of insulation material layer 12 can be by exhausted
The impedance value of edge material layer 12 determines.For example, the impedance value of insulation material layer 12 is available exhausted when being greatly reduced
The maximum value of the ratio of the insulating materials M2 and conductive material M3 of edge material layer 12.
For example, as shown in figure 8, each end-electrode structure 2 includes one for coating the side of multiple field stacked structure 1
The second clad 22 and one that the first clad 21, one of end 20P is used to coat the first clad 21 is used to coat second
The third clad 23 of clad 22.In addition, the first clad 21, the second clad 22 and third clad 23 can be distinguished
For silver layer, nickel layer and tin layers, however the present invention is not illustrated with this and is limited.
For example, cooperate shown in Fig. 8 and Fig. 9, thin film capacitor Z can first pass through a packing colloid P (can be by insulating
Made by material) it is packaged, it then will be electrically connected at two conductive pin L of thin film capacitor Z again from thin film capacitor Z
The outside of packing colloid P is extended to, whereby with the production of one of thin film capacitor encapsulating structure of completion.In addition, cooperation Fig. 8
And shown in Figure 10, thin film capacitor Z can first pass through a packing colloid P and be packaged, and then again be sealed packed colloid P
The thin film capacitor Z of dress is accommodated in a metal shell H (such as aluminum hull), will finally be electrically connected at thin film capacitor Z's again
Two conductive pin L extend to the outside of metal shell H from thin film capacitor Z, whereby to complete another thin film capacitor envelope
The production of assembling structure.That is, multiple field stacked structure 1 and two end-electrode structures 2 all can be by a packing colloid P packets
It covers, and two conductive pin L can distinguish two end-electrode structures 2 in electrical contact and exposed from packing colloid P and go out.However, this
The thin film capacitor encapsulating structure of invention is not limited with above-mentioned lifted example.
It is worth noting that, first embodiment of the invention also can be omitted the first baking module F2 and the second baking module V3
Use.That is, metal material layer molding equipment F includes a metal material that can be directly used for molding metallic material layer 11
Forming module F1, and being total to evaporated device V includes an insulating materials vapor deposition module that can be directly used for forming insulation material layer 12
V1 and one can be directly used for the conductive material vapor deposition module V2 of shaped conductive particle 120.
Second embodiment
It please refers to shown in Figure 11 to Figure 16, the production that second embodiment of the invention provides a kind of multiple field stacked structure is set
Standby and thin film capacitor production method.By Figure 11~16 it is found that second embodiment of the invention and the compared with Fig. 2~7
One embodiment it is maximum the difference is that:
Firstly, in a second embodiment, first material layer L1 can be the conductive particle for being mixed into multiple random distributions inside one
120 insulation material layer 12, and second material layer L2 can be a metal material layer 11.In addition, first material layer molding equipment
D1 can be evaporated device V altogether, and second material layer molding equipment D2 can be a metal material that be used to form metal material layer 11
Bed of material molding equipment F.In addition, insulation material layer 12 can the insulating materials M2 as provided by total evaporated device V formed, and lead
Electric particle 120 can the conductive material M3 as provided by total evaporated device V formed.
In addition, in a second embodiment, evaporated device V includes one for providing the insulating materials vapor deposition of insulating materials M2 altogether
Module V1, one for provide conductive material M3 conductive material vapor deposition module V2 and one adjacent to insulating materials vapor deposition module V1 with
The second baking module V3 of conductive material vapor deposition module V2.In addition, insulating materials M2 can pass through the baking of the second baking module V3
And insulation material layer 12 is formed, and conductive material M3 can form conductive particle 120 by the baking of the second baking module V3.
More specifically, cooperate Figure 11 and Figure 12 to Figure 14 shown in, firstly, first part insulating materials M2 (such as PMMA,
PP, PET etc.) it can be formed on bearing substrate 10 by insulating materials vapor deposition module V1, and conductive material M3 (such as copper,
Aluminium etc.) it can be formed on insulating materials M2 by conductive material vapor deposition module V2；Then, the insulating materials M2 of second part is again
Module V1 is deposited by insulating materials to be formed on the insulating materials M2 of first part to cover conductive material M3；Finally, absolutely
Edge material M2 can form insulation material layer 12 by the baking of the second baking module V3, and conductive material M3 can pass through second
The baking of baking module V3 and form conductive particle 120.It is limited however, the present invention is not illustrated with this.
Furthermore in a second embodiment, metal material layer molding equipment F includes one for providing the metal of metal material M1
The first baking module F2 of material forming module F1 and an adjacent metal material forming module F1, and metal material M1 can lead to
It crosses the baking of the first baking module F2 and forms metal material layer 11.More specifically, cooperate Figure 11, Figure 15 and Figure 16 institute
Show, first passes through firstly, metal material M1 (such as copper, aluminium etc.) can first pass through metal material moulding module F1 and be formed in insulation material
On the bed of material 12, then metal material M1 forms metal material layer 11 by the baking of the first baking module F2 again.It is worth noting
, metal material moulding module F1 can pass through coating (coating), spraying (spraying) or printing (printing) etc.
Mode provides metal material M1, however the present invention is not illustrated with this and is limited.
It is worth noting that, second embodiment of the invention also can be omitted the first baking module F2 and the second baking module V3
Use.That is, metal material layer molding equipment F includes a metal material that can be directly used for molding metallic material layer 11
Forming module F1, and being total to evaporated device V includes an insulating materials vapor deposition module that can be directly used for forming insulation material layer 12
V1 and one can be directly used for the conductive material vapor deposition module V2 of shaped conductive particle 120.
The beneficial effect of embodiment
A wherein beneficial effect of the invention is, a kind of making apparatus of multiple field stacked structure provided by the present invention
And the production method of thin film capacitor, " first material layer molding equipment D1 and second material layer molding equipment D2 can be passed through
One of the two is evaporated device V " altogether and " evaporated device V provides insulating materials simultaneously by way of total vapor deposition altogether
The technical solution of M2 and conductive material M3 ", to form one of them layer of both first material layer L1 and second material layer L2, and
Multiple first material layer L1 and multiple second material layer L2 can be alternately stacked on bearing substrate 10, be stacked with forming a multiple field
Structure 1.
Significantly, since the inside of each insulation material layer 12 is mixed with multiple conductive particles 120, so can
Promote the dielectric coefficient or dielectric constant of thin film capacitor Z and its multiple field stacked structure 1.
Content disclosed above is only preferred possible embodiments of the invention, not thereby limits to right of the invention and wants
The protection scope of book is sought, so all equivalence techniques variations done with description of the invention and accompanying drawing content, are both contained in
In the protection scope of claims of the present invention.
Claims (10)
1. a kind of production method of thin film capacitor, which is characterized in that the production method of the thin film capacitor includes:
One bearing substrate is provided；
Form multiple first material layers and multiple second material layers, wherein multiple first material layers and multiple described the
Two material layers are alternately stacked on the bearing substrate, to form a multiple field stacked structure；And
Two end-electrode structures are formed, to be respectively coated by two opposite side ends of the multiple field stacked structure；
Wherein, each described first material layer is formed by a first material layer molding equipment, each described second material
Layer is formed by a second material layer molding equipment, and the first material layer molding equipment is set with second material layer molding
One of both standby is to have evaporated device altogether；
Wherein, the evaporated device altogether provides insulating materials and conductive material simultaneously by way of total vapor deposition, described in being formed
One of them layer of both first material layer and the second material layer.
2. the production method of thin film capacitor according to claim 1, which is characterized in that the first material layer is a gold medal
Belong to material layer, and the second material layer is the insulation material layer that the conductive particle of multiple random distributions is mixed into inside one, wherein
The metal material layer molding equipment that the first material layer molding equipment is used to form the metal material layer for one, described second
Material layer molding equipment is the evaporated device altogether, insulation material layer insulation as provided by the evaporated device altogether
Material is formed, and conductive particle conductive material as provided by the evaporated device altogether is formed.
3. the production method of thin film capacitor according to claim 2, which is characterized in that the metal material formable layer is set
Standby includes one for providing the metal material moulding module and one of metal material adjacent to the of the metal material moulding module
One baking module, and the metal material forms the metal material layer by the baking of first baking module, wherein
The evaporated device altogether includes one being used to provide the described the insulating materials vapor deposition module of insulating materials, one being used to provide the described conduction
The conductive material vapor deposition module of material and one is adjacent to insulating materials vapor deposition module and conductive material vapor deposition module
Second baking module, the insulating materials form the insulation material layer, and institute by the baking of second baking module
It states conductive material and the conductive particle is formed by the baking of second baking module, wherein the ruler of the conductive particle
The percentage that very little and multiple conductive particles account for the insulation material layer is existed by the insulating materials and the conductive material
Evaporation capacity when being deposited altogether is determined.
4. the production method of thin film capacitor according to claim 2, which is characterized in that the metal material formable layer is set
Standby includes one for shaping the metal material moulding module of the metal material layer, and the evaporated device altogether include one at
The insulating materials vapor deposition module of insulation material layer described in shape and one is for shaping the conductive material vapor deposition mould of the conductive particle
Block, wherein the size of the conductive particle and multiple conductive particles account for the percentage of the insulation material layer by described
Insulating materials is determined with evaporation capacity of the conductive material in total vapor deposition.
5. the production method of thin film capacitor according to claim 1, which is characterized in that the first material layer is in one
Portion is mixed into the insulation material layer of the conductive particle of multiple random distributions, and the second material layer is a metal material layer, wherein
The first material layer molding equipment is the evaporated device altogether, and the insulation material layer is as provided by the evaporated device altogether
The insulating materials is formed, and conductive particle conductive material as provided by the evaporated device altogether is formed, and
The second material layer molding equipment is a metal material layer molding equipment for being used to form the metal material layer.
6. the production method of thin film capacitor according to claim 5, which is characterized in that the metal material formable layer is set
Standby includes one for providing the metal material moulding module and one of metal material adjacent to the of the metal material moulding module
One baking module, and the metal material forms the metal material layer by the baking of first baking module, wherein
The evaporated device altogether includes one being used to provide the described the insulating materials vapor deposition module of insulating materials, one being used to provide the described conduction
The conductive material vapor deposition module of material and one is adjacent to insulating materials vapor deposition module and conductive material vapor deposition module
Second baking module, the insulating materials form the insulation material layer, and institute by the baking of second baking module
It states conductive material and the conductive particle is formed by the baking of second baking module, wherein the ruler of the conductive particle
The percentage that very little and multiple conductive particles account for the insulation material layer is existed by the insulating materials and the conductive material
Evaporation capacity when being deposited altogether is determined.
7. the production method of thin film capacitor according to claim 5, which is characterized in that the metal material formable layer is set
Standby includes one for shaping the metal material moulding module of the metal material layer, and the evaporated device altogether include one at
The insulating materials vapor deposition module of insulation material layer described in shape and one is for shaping the conductive material vapor deposition mould of the conductive particle
Block, wherein the size of the conductive particle and multiple conductive particles account for the percentage of the insulation material layer by described
Insulating materials is determined with evaporation capacity of the conductive material in total vapor deposition.
8. a kind of making apparatus of multiple field stacked structure, which is characterized in that the making apparatus packet of the multiple field stacked structure
It includes:
One rotatable plummer, the rotatable plummer is for carrying a bearing substrate；
One first material layer molding equipment, the first material layer molding equipment are arranged adjacent to the rotatable plummer；With
And
One second material layer molding equipment, the second material layer molding equipment are arranged adjacent to the rotatable plummer；
Wherein, multiple first material layers are formed by the first material layer molding equipment, and multiple second material layers are by described
Two material layer molding equipments are formed, and both the first material layer molding equipment and the second material layer molding equipment its
One of for altogether evaporated device；
Wherein, the evaporated device altogether provides insulating materials and conductive material simultaneously by way of total vapor deposition, described in being formed
One of them layer of both first material layer and the second material layer；
Wherein, multiple first material layers and multiple second material layers are alternately stacked on the bearing substrate, with shape
At the multiple field stacked structure.
9. the making apparatus of multiple field stacked structure according to claim 8, which is characterized in that the first material layer is
One metal material layer, and the second material layer is the insulation material layer that the conductive particle of multiple random distributions is mixed into inside one,
Wherein, the first material layer molding equipment is a metal material layer molding equipment for being used to form the metal material layer, institute
Stating second material layer molding equipment is the evaporated device altogether, insulation material layer institute as provided by the evaporated device altogether
It states insulating materials to be formed, and conductive particle conductive material as provided by the evaporated device altogether is formed,
In, the metal material layer molding equipment includes one for providing the metal material moulding module and one of metal material adjacent to institute
The first baking module of metal material moulding module is stated, and the metal material passes through the baking shape of first baking module
At the metal material layer, wherein the evaporated device altogether includes an insulating materials vapor deposition for being used to provide the described insulating materials
Module, one be used to provide the described conductive material conductive material vapor deposition module and one adjacent to the insulating materials vapor deposition module with
Second baking module of the conductive material vapor deposition module, the baking shape that the insulating materials passes through second baking module
At the insulation material layer, and the conductive material forms the conductive particle by the baking of second baking module,
Wherein, the size of the conductive particle and multiple conductive particles account for the percentage of the insulation material layer by the insulation
Material is determined with evaporation capacity of the conductive material in total vapor deposition.
10. the making apparatus of multiple field stacked structure according to claim 8, which is characterized in that the first material layer
For be mixed into inside one multiple random distributions conductive particle insulation material layer, and the second material layer is a metal material
Layer, wherein the first material layer molding equipment is the evaporated device altogether, and the insulation material layer is by the evaporated device altogether
The provided insulating materials is formed, conductive particle conductive material institute as provided by the evaporated device altogether
It is formed, and the second material layer molding equipment is a metal material layer molding equipment for being used to form the metal material layer,
Wherein, the metal material layer molding equipment includes that the metal material moulding module and one for providing metal material is neighbouring
First baking module of the metal material moulding module, and the metal material passes through the baking of first baking module
Form the metal material layer, wherein the evaporated device altogether includes that an insulating materials for being used to provide the described insulating materials steams
Plating module, one are used to provide the described the conductive material vapor deposition module and one of conductive material adjacent to insulating materials vapor deposition module
With the second baking module of conductive material vapor deposition module, the baking that the insulating materials passes through second baking module
The insulation material layer is formed, and the conductive material forms described conductive by the baking of second baking module
Grain, wherein the size of the conductive particle and multiple conductive particles account for the percentage of the insulation material layer by described
Insulating materials is determined with evaporation capacity of the conductive material in total vapor deposition.
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| CN109671577A (en) * | 2017-10-13 | 2019-04-23 | 钰邦科技股份有限公司 | The production method of the making apparatus and thin film capacitor of multiple field stacked structure |
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| JPH09232174A (en) * | 1996-02-23 | 1997-09-05 | Murata Mfg Co Ltd | Laminated type ceramic electronic component and its manufacture |
| CN1871878A (en) * | 2003-08-25 | 2006-11-29 | 株式会社半导体能源研究所 | Electrode device for organic device, electronic device having electrode device for organic device, and method of forming electrode device for organic device |
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