TWI654633B - Device for manufacturing a multi-layer stacked structure and method for manufacturing a thin film capacitor - Google Patents

Abstract

The invention discloses a manufacturing device of a multilayer stacked structure and a manufacturing method of the film capacitor. The method for fabricating a film capacitor includes: providing a carrier substrate; forming a plurality of first material layers and a plurality of second material layers, wherein the plurality of first material layers and the plurality of second material layers are alternately stacked on the carrier substrate to form a a multi-layer stack structure; and two end electrode structures are formed to respectively cover opposite side ends of the multi-layer stack structure. Each of the first material layers is formed by a first material layer forming apparatus, and each of the second material layers is formed by a second material layer forming apparatus. One of the first material layer forming device and the second material layer forming device is a sequential vapor deposition device, whereby the sequential evaporation device can separately provide the insulating material and the conductive material by sequential evaporation. One of a first material layer and a second material layer is formed.

Description

Manufacturing device of multilayer stacked structure and manufacturing method of film capacitor

The present invention relates to a fabrication apparatus of a multilayer stacked structure and a method of fabricating a film capacitor, and more particularly to a fabrication apparatus for a multilayer stacked structure for improving dielectric constant and a method of fabricating a film capacitor.

Capacitors have been widely used in consumer appliances, computer motherboards and their peripherals, power supplies, communication products, and automotive basic components, including: filtering, bypass, rectification, coupling, decoupling And turn equal. It is one of the indispensable components in electronic products. Capacitors have different types according to different materials and uses. Including aluminum electrolytic capacitors, tantalum electrolytic capacitors, multilayer ceramic capacitors, film capacitors and so on. The overall structure of the film capacitor fabricated by the prior art is too complicated and needs to be improved, and the dielectric constant which the film capacitor manufactured by the prior art can provide is too low and needs to be improved.

The technical problem to be solved by the present invention is to provide a manufacturing apparatus of a multilayer stacked structure and a manufacturing method of the film capacitor in view of the deficiencies of the prior art.

In order to solve the above technical problem, one technical solution adopted by the present invention is to provide a method for fabricating a film capacitor, comprising: providing a carrier substrate; forming a plurality of first material layers and a plurality of second material layers, wherein a plurality of the first material layers and a plurality of the second material layers are alternately stacked on the carrier substrate to form Forming a multi-layer stack structure; and forming two end electrode structures to respectively cover opposite end portions of the multi-layer stack structure. Wherein each of the first material layers is formed by a first material layer forming apparatus, each of the second material layers is formed by a second material layer forming apparatus, and the first material layer forming apparatus and One of the second material layer forming apparatuses is a sequential vapor deposition apparatus; wherein the sequential vapor deposition apparatus separately supplies an insulating material and a conductive material by sequential evaporation to form the first One of a layer of material and one of the second layer of material.

In order to solve the above technical problem, another technical solution adopted by the present invention is to provide a manufacturing apparatus of a multi-layer stacked structure, comprising: a rotatable carrying platform, a first material layer forming device, and a second material layer. Molding equipment. The rotatable carrier is configured to carry a carrier substrate. The first material layer forming apparatus is disposed adjacent to the rotatable deck. The second material layer forming apparatus is disposed adjacent to the rotatable deck. Wherein a plurality of first material layers are formed by the first material layer forming apparatus, a plurality of second material layers are formed by the second material layer forming apparatus, and the first material layer forming apparatus and the One of the two material layer forming apparatuses is a sequential vapor deposition apparatus. Wherein, the sequential evaporation device separately supplies an insulating material and a conductive material by sequential evaporation to form one of the first material layer and the second material layer. Wherein, a plurality of the first material layers and a plurality of the second material layers are alternately stacked on the carrier substrate to form the multilayer stacked structure.

One of the beneficial effects of the present invention is that the manufacturing apparatus of the multilayer stacked structure and the manufacturing method of the film capacitor provided by the present invention can pass the "first material layer forming apparatus and the second material layer forming apparatus" One of the two is a sequential vapor deposition apparatus" and "the sequential vapor deposition apparatus separately provides an insulating material and a conductive material by sequential evaporation" to form the first material layer and One of the second material layers is one of the layers, and a plurality of the first material layers and the plurality of the second material layers are alternately stacked on the carrier substrate to form a multi-layer stack structure.

For a better understanding of the features and technical aspects of the present invention, reference should be made to the detailed description and drawings of the invention.

R‧‧‧Rotatable platform

D1‧‧‧First material layer forming equipment

D2‧‧‧Second material layer forming equipment

F‧‧‧Metal material layer forming equipment

F1‧‧‧Metal material forming module

F2‧‧‧First baking module

V‧‧‧Sequential evaporation equipment

V11‧‧‧First Insulation Material Evaporation Module

V12‧‧‧Second insulation material evaporation module

V2‧‧‧ Conductive material evaporation module

V3‧‧‧second baking module

Z‧‧‧ film capacitor

1‧‧‧Multilayer stacking structure

10‧‧‧Loading substrate

11‧‧‧Metal material layer

12‧‧‧Insulation layer

120‧‧‧Electrical particles

121‧‧‧The first part of the insulating material layer

122‧‧‧Second part of insulating material layer

L1‧‧‧ first material layer

L2‧‧‧Second material layer

M1‧‧‧Metal materials

M2‧‧‧Insulation material

M21‧‧‧Part 1 Insulation

M22‧‧‧Second part insulation material

M3‧‧‧ conductive materials

2‧‧‧End electrode structure

20P‧‧‧ side end

21‧‧‧First cladding

22‧‧‧Second coating

23‧‧‧ Third cladding

P‧‧‧Package colloid

H‧‧‧Metal housing

L‧‧‧conductive pin

1 is a flow chart of a method of fabricating a film capacitor of the present invention.

2 is a schematic view of a manufacturing apparatus of a multi-layer stack structure according to a first embodiment of the present invention.

3 is a schematic view showing the processing of forming a metal material in the method of fabricating the film capacitor of the first embodiment of the present invention.

4 is a schematic view showing the processing of forming a metal material layer in the method of fabricating the film capacitor of the first embodiment of the present invention.

FIG. 5 is a schematic view showing the processing of forming a first portion of an insulating material in a method of fabricating a film capacitor according to a first embodiment of the present invention.

Fig. 6 is a schematic view showing the processing of forming a conductive material in the method of fabricating a film capacitor according to the first embodiment of the present invention.

Fig. 7 is a schematic view showing the processing of forming a second portion of the insulating material in the method of fabricating the film capacitor of the first embodiment of the present invention.

Fig. 8 is a schematic view showing the processing of forming an insulating material layer in which a plurality of randomly distributed conductive particles are internally mixed in the method for fabricating a film capacitor according to the first embodiment of the present invention.

Fig. 9 is a schematic view showing a film capacitor of the first embodiment of the present invention.

Figure 10 is a schematic illustration of one of the film capacitor package structures of the first embodiment of the present invention.

FIG. 11 is a schematic view showing another film capacitor package structure according to the first embodiment of the present invention.

FIG. 12 is a schematic diagram of a manufacturing apparatus of a multi-layer stack structure according to a second embodiment of the present invention.

Figure 13 is a schematic view showing the processing of forming a first portion of an insulating material in a method of fabricating a film capacitor in accordance with a second embodiment of the present invention.

Figure 14 is a schematic view showing the processing of forming a conductive material in a method of fabricating a film capacitor according to a second embodiment of the present invention.

Figure 15 is a schematic view showing the processing of forming a second portion of an insulating material in a method of fabricating a film capacitor according to a second embodiment of the present invention.

Fig. 16 is a schematic view showing the processing of forming an insulating material layer in which a plurality of randomly distributed conductive particles are mixed in the method of fabricating a film capacitor according to a second embodiment of the present invention.

Figure 17 is a schematic view showing the processing of forming a metal material in a method of fabricating a film capacitor according to a second embodiment of the present invention.

Fig. 18 is a schematic view showing the processing of forming a metal material layer in the method of fabricating a film capacitor according to a second embodiment of the present invention.

The following is a description of an embodiment of the present invention relating to a "multilayer stacked structure fabrication apparatus and a method for fabricating a film capacitor" by a specific embodiment, and those skilled in the art can understand the advantages of the present invention from the disclosure of the present specification. With the effect. The invention can be implemented or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. In addition, the drawings of the present invention are merely illustrative and are not intended to be stated in the actual size. The following embodiments will further explain the related technical content of the present invention, but the disclosure is not intended to limit the scope of the present invention.

[First Embodiment]

Referring to FIG. 1 to FIG. 9 , a first embodiment of the present invention provides a manufacturing apparatus for a multi-layer stack structure, including: a rotatable carrier R, a first material layer forming device D1, and a second material layer. Molding equipment D2.

Furthermore, the rotatable carrier R can be used to carry a carrier substrate 10, the first material layer forming device D1 is disposed adjacent to the rotatable carrier R, and the second material layer forming device D2 is adjacent to the rotatable carrier R Settings. In addition, a plurality of first materials The material layer L1 may be formed by the first material layer forming apparatus D1, the plurality of second material layers L2 may be formed by the second material layer forming apparatus D2, and the first material layer forming apparatus D1 and the second material layer forming apparatus D2 One of them is a sequential vapor deposition apparatus V. In addition, the sequential vapor deposition apparatus V can separately provide the insulating material M2 and the conductive material M3 by sequential evaporation to form one of the first material layer L1 and the second material layer L2. Thereby, a plurality of first material layers L1 and a plurality of second material layers L2 are alternately stacked on the carrier substrate 10 to form a multilayer stacked structure 1 (as shown in FIG. 9).

For example, the fabrication apparatus of a multi-layer stack structure provided by the present invention can be operated in a vacuum environment or in a non-vacuum environment.

Referring to FIG. 1 to FIG. 9 , the present invention provides a method for fabricating a film capacitor, which may include at least the following steps: first, providing a carrier substrate 10 (S100); then, forming a plurality of first material layers L1 and a plurality of second material layers L2, wherein a plurality of first material layers L1 and a plurality of second material layers L2 are alternately stacked on the carrier substrate 10 to form a multi-layer stacked structure 1 (S102); The end electrode structures 2 are respectively wrapped around the opposite side end portions 20P of the multilayer stacked structure 1 (S104) to complete the fabrication of the film capacitor Z (as shown in FIG. 9). For example, the carrier substrate 10 can be a conductive substrate made of any conductive material (such as copper, aluminum, etc.) or an insulation made of any insulating material (such as PMMA, PP, PET, etc.). Substrate.

Further, each of the first material layers L1 may be formed by a first material layer forming apparatus D1, each of the second material layers L2 may be formed by a second material layer forming apparatus D2, and the first material layer forming apparatus One of D1 and the second material layer forming apparatus D2 is a sequential vapor deposition apparatus V. In addition, the sequential vapor deposition apparatus V can separately provide the insulating material M2 and the conductive material M3 by sequential evaporation to form one of the first material layer L1 and the second material layer L2.

For example, the first material layer L1 may be a metal material layer 11 , and the second material layer L2 may be an insulating material internally mixed with a plurality of randomly distributed conductive particles 120 . Layer 12, that is, a plurality of conductive particles 120 are formed in a randomly distributed manner to exhibit a non-uniform arrangement. In addition, the first material layer forming apparatus D1 may be a metal material layer forming apparatus F for forming the metal material layer 11, and the second material layer forming apparatus D2 may be a sequential vapor deposition apparatus V. Further, the insulating material layer 12 may be formed of the insulating material M2 provided by the sequential evaporation apparatus V, and the conductive particles 120 may be formed of the conductive material M3 provided by the sequential evaporation apparatus V. It is to be noted that since a plurality of conductive particles 120 are mixed inside each of the insulating material layers 12, the dielectric constant or dielectric constant of the film capacitor Z and its multilayer stacked structure 1 can be improved.

For example, the metal material layer forming apparatus F includes a metal material forming module F1 for providing the metal material M1 and a first baking module F2 adjacent to the metal material forming module F1, and the metal material M1 can pass the first The baking of the baking module F2 forms a layer 11 of the metal material. Furthermore, as shown in FIG. 2, FIG. 3 and FIG. 4, first, the metal material M1 (for example, copper, aluminum, etc.) is first formed on the carrier substrate 10 through the metal material molding module F1, and then the metal. The material M1 is further formed into a metal material layer 11 by baking of the first baking module F2. It is to be noted that the metal material forming module F1 may provide the metal material M1 by coating, spraying, or printing, but the invention is not limited by the examples.

For example, the sequential evaporation apparatus V includes a first insulating material evaporation module V11 for providing a part of the insulating material M2 (that is, the first partial insulating material M21), and a conductive material for providing the conductive material M3. The vapor deposition module V2 is a second insulating material vapor deposition module V12 for providing another part of the insulating material M2 (that is, the second portion of the insulating material M22) and a second baking module V3. In addition, the insulating material M2 can form the insulating material layer 12 by baking of the second baking module V3, and the conductive material M3 can form the conductive particles 120 by baking of the second baking module V3. Furthermore, with reference to FIG. 2 and FIG. 5 to FIG. 8, first, the first part of the insulating material M21 (for example, PMMA, PP, PET, mylar, polystyrene, Polycarbonate, acrylate, etc.) are formed on the metal material layer 11 by the first insulating material evaporation module V11, and the conductive material M3 (for example, copper, aluminum, indium, etc.) is formed by the conductive material evaporation module V2. The first portion of the insulating material M21; then, the second portion of the insulating material M22 is formed on the first portion of the insulating material M21 through the second insulating material evaporation module V12 to cover the conductive material M3; finally, the insulating material M2 can pass through the second The baking of the baking module V3 forms the insulating material layer 12 (that is, the first partial insulating material M21 can form the first partial insulating material layer 121 by the baking of the second baking module V3, and the second partial insulation The material M22 can form a second portion of the insulating material layer 122 by baking of the second baking module V3, and the conductive material M3 can form the conductive particles 120 by baking of the second baking module V3. However, the invention is not limited by this example.

It is worth mentioning that after the conductive material M3 is formed on the insulating material M2 through the conductive material evaporation module V2, the conductive material M3 can also be directly baked, thereby increasing the circularity of the conductive particles 120 and making the conductive The particles 120 are closer to a sphere.

It should be noted that, as shown in FIG. 6 and FIG. 8, "the size of the conductive particles 120" and "the percentage of the plurality of conductive particles 120 occupying the insulating material layer 12" may be made of the insulating material M2 (that is, the first portion of the insulating material M21). The evaporation of the second portion of the insulating material M22) and the conductive material M3 in the order of vapor deposition is determined. For example, the opening area of the evaporating dish containing the insulating material M2 affects the evaporation amount of the insulating material M2 in the sequential evaporation, and the opening area of the evaporating dish containing the conductive material M3 affects the conductive material M3 in order. The amount of evaporation during vapor deposition. Furthermore, the ratio of the insulating material M2 of the insulating material layer 12 to the conductive material M3 can be determined by the impedance value of the insulating material layer 12. For example, when the impedance value of the insulating material layer 12 is greatly reduced, the maximum value of the ratio of the insulating material M2 of the insulating material layer 12 to the conductive material M3 can be obtained.

For example, as shown in FIG. 9, each of the terminal electrode structures 2 includes a first cladding layer 21 for covering the side end portions 20P of the multilayer stack structure 1, and a cladding layer for coating the first cladding layer. a second cladding layer 22 of 21 and a cladding layer 22 for coating The third cladding layer 23. In addition, the first cladding layer 21, the second cladding layer 22, and the third cladding layer 23 may be a silver layer, a nickel layer, and a tin layer, respectively, but the invention is not limited by the examples.

For example, as shown in FIG. 9 and FIG. 10, the film capacitor Z can be first packaged through an encapsulant P (which can be made of an insulating material), and then electrically connected to the two conductive pins of the film capacitor Z. L extends from the film capacitor Z to the outside of the encapsulant P, thereby completing the fabrication of one of the film capacitor package structures. In addition, as shown in FIG. 9 and FIG. 11, the film capacitor Z can be first packaged by an encapsulant P, and then the film capacitor Z encapsulated by the encapsulant P is housed in a metal case H (for example, an aluminum case). Finally, the two conductive pins L electrically connected to the film capacitor Z are finally extended from the film capacitor Z to the outside of the metal case H, thereby completing the fabrication of another film capacitor package structure. That is, the multi-layer stack structure 1 and the two end electrode structures 2 are both covered by an encapsulant P, and the two conductive pins L can electrically contact the two end electrode structures 2 and are exposed from the encapsulant P, respectively. And out. However, the film capacitor package structure of the present invention is not limited to the above-exemplified examples.

It should be noted that the first embodiment of the present invention can also omit the use of the first baking module F2 and the second baking module V3. That is, the metal material layer forming apparatus F includes a metal material forming module F1 which can be directly used for forming the metal material layer 11, and the sequential vapor deposition apparatus V includes a layer 12 for directly forming the insulating material 12 ( That is, the first insulating material evaporation module V11 of the first partial insulating material layer 121), the conductive material evaporation module V2 which can be directly used for forming the conductive particles 120, and one layer can be directly used for forming another portion of the insulating material layer 12 The second insulating material evaporation module V12 (ie, the second portion of the insulating material layer 122).

[Second embodiment]

Referring to FIG. 12 to FIG. 18, a second embodiment of the present invention provides a manufacturing apparatus of a multi-layer stacked structure and a manufacturing method of the film capacitor. Figure 12~18 The comparison between FIG. 2 and FIG. 8 shows that the greatest difference between the second embodiment of the present invention and the first embodiment is that, firstly, in the second embodiment, the first material layer L1 may be internally mixed with a plurality of randomly distributed conductive materials. The insulating material layer 12 of the particles 120, and the second material layer L2 may be a metal material layer 11. In addition, the first material layer forming apparatus D1 may be a sequential vapor deposition apparatus V, and the second material layer forming apparatus D2 may be a metal material layer forming apparatus F for forming the metal material layer 11. Further, the insulating material layer 12 may be formed of the insulating material M2 provided by the sequential evaporation apparatus V, and the conductive particles 120 may be formed of the conductive material M3 provided by the sequential evaporation apparatus V.

In addition, in the second embodiment, the sequential vapor deposition apparatus V includes a first insulating material evaporation module V11 for providing a part of the insulating material M2 (that is, the first partial insulating material M21), and one for providing conductivity. The conductive material evaporation module V2 of the material M3 is a second insulating material evaporation module V12 for providing another part of the insulating material M2 (that is, the second partial insulating material M22) and a second baking module V3. In addition, the insulating material M2 can form the insulating material layer 12 by baking of the second baking module V3, and the conductive material M3 can form the conductive particles 120 by baking of the second baking module V3.

Furthermore, as shown in FIG. 12 and FIG. 13 to FIG. 16, first, the first partial insulating material M21 (for example, PMMA, PP, PET, etc.) is formed on the carrier substrate 10 through the first insulating material evaporation module V11. Upper, and the conductive material M3 (such as copper, aluminum, etc.) is formed on the first portion of the insulating material M21 through the conductive material evaporation module V2; then, the second portion of the insulating material M22 is passed through the second insulating material evaporation module V12 is formed on the first portion of the insulating material M21 to cover the conductive material M3; finally, the insulating material M2 can form the insulating material layer 12 by baking of the second baking module V3 (that is, the first portion of the insulating material M21 can Forming a first portion of the insulating material layer 121 by baking of the second baking module V3, and forming a second portion of the insulating material layer 122 by the baking of the second baking module V3. And the conductive material M3 can pass through the second baking module V3 The baking is performed to form conductive particles 120. However, the invention is not limited by this example.

Furthermore, in the second embodiment, the metal material layer forming apparatus F includes a metal material forming module F1 for providing the metal material M1 and a first baking module F2 adjacent to the metal material forming module F1, and The metal material M1 can form the metal material layer 11 by baking of the first baking module F2. Furthermore, as shown in FIG. 12, FIG. 17, and FIG. 18, first, the metal material M1 (for example, copper, aluminum, etc.) is first formed on the insulating material layer 12 by the metal material forming module F1, and then The metal material M1 is further formed into a metal material layer 11 by baking of the first baking module F2. It is to be noted that the metal material forming module F1 may provide the metal material M1 by coating, spraying, or printing, but the invention is not limited by the examples.

It should be noted that the second embodiment of the present invention can also omit the use of the first baking module F2 and the second baking module V3. That is, the metal material layer forming apparatus F includes a metal material forming module F1 which can be directly used for forming the metal material layer 11, and the sequential vapor deposition apparatus V includes a layer 12 for directly forming the insulating material 12 ( That is, the first insulating material evaporation module V11 of the first partial insulating material layer 121), the conductive material evaporation module V2 which can be directly used for forming the conductive particles 120, and one layer can be directly used for forming another portion of the insulating material layer 12 The second insulating material evaporation module V12 (ie, the second portion of the insulating material layer 122).

[Advantageous Effects of Embodiments]

One of the beneficial effects of the present invention is that the manufacturing apparatus of the multilayer stacked structure and the manufacturing method of the film capacitor provided by the present invention can pass the "first material layer forming apparatus D1 and the second material layer forming apparatus D2" One of them is a sequential vapor deposition device V" and a "sequential vapor deposition device V provides the insulating material M2 and the conductive material M3 respectively by sequential evaporation" to form the first material layer L1 and the first One of the two material layers L2, and the plurality of first material layers L1 and the plurality of second material layers L2 are alternately stacked on the carrier substrate 10 to form A multi-layer stack structure 1.

It is to be noted that since a plurality of conductive particles 120 are mixed inside each of the insulating material layers 12, the dielectric constant or dielectric constant of the film capacitor Z and its multilayer stacked structure 1 can be improved.

The above disclosure is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, any equivalent technical changes made by using the present specification and the contents of the drawings are included in the application of the present invention. Within the scope of the patent.

Claims (10)

A method of fabricating a film capacitor, comprising: providing a carrier substrate; forming a plurality of first material layers and a plurality of second material layers, wherein a plurality of the first material layers alternate with a plurality of the second material layers Stacked on the carrier substrate to form a multi-layer stack structure; and two end electrode structures are formed to respectively cover opposite side ends of the multi-layer stack structure; wherein each of the first The material layer is formed by a first material layer forming apparatus, each of the second material layers is formed by a second material layer forming apparatus, and the first material layer forming apparatus and the second material layer forming apparatus One of the two is a sequential vapor deposition apparatus; wherein the sequential evaporation apparatus separately supplies an insulating material and a conductive material by sequential evaporation to form the first material layer and the second One of the layers of material. The method of fabricating a film capacitor according to claim 1, wherein the first material layer is a metal material layer, and the second material layer is an insulating material layer internally mixed with a plurality of randomly distributed conductive particles. Wherein the first material layer forming apparatus is a metal material layer forming apparatus for forming the metal material layer, the second material layer forming apparatus is the sequential vapor deposition apparatus, and the insulating material layer is The insulating material provided by the sequential evaporation device is formed, and the conductive particles are formed by the conductive material provided by the sequential evaporation device. The method of fabricating a film capacitor according to claim 2, wherein the metal material layer forming apparatus comprises a metal material forming module for providing a metal material and a first baking adjacent to the metal material forming module. a module, and the metal material forms the metal material layer by baking of the first baking module, wherein the sequential evaporation device includes a portion for providing a part of the a first insulating material evaporation module for insulating material, a conductive material evaporation module for providing the conductive material, a second insulating material evaporation module for providing another portion of the insulating material, and a first a baking module, wherein the insulating material forms the insulating material layer by baking of the second baking module, and the conductive material is formed by baking of the second baking module The conductive particles, wherein a size of the conductive particles and a percentage of the plurality of the conductive particles to the insulating material layer are determined by an evaporation amount of the insulating material and the conductive material when sequentially vapor-deposited. The method of fabricating a film capacitor according to claim 2, wherein the metal material layer forming apparatus comprises a metal material forming module for forming the metal material layer, and the sequential vapor deposition apparatus comprises one a first insulating material evaporation module for forming a portion of the insulating material layer, a conductive material evaporation module for forming the conductive particles, and a second insulating layer for forming another portion of the insulating material layer a material evaporation module, wherein a size of the conductive particles and a percentage of the plurality of conductive particles occupying the insulating material layer are determined by evaporation of the insulating material and the conductive material during sequential evaporation . The method of fabricating a film capacitor according to claim 1, wherein the first material layer is an insulating material layer internally mixed with a plurality of randomly distributed conductive particles, and the second material layer is a metal material layer. Wherein the first material layer forming apparatus is the sequential vapor deposition apparatus, the insulating material layer is formed by the insulating material provided by the sequential evaporation apparatus, and the conductive particles are The conductive material provided by the sequential evaporation apparatus is formed, and the second material layer forming apparatus is a metal material layer forming apparatus for forming the metal material layer. The method of fabricating a film capacitor according to claim 5, wherein the metal material layer forming apparatus comprises a metal material forming module for providing a metal material and a first baking adjacent to the metal material forming module. a module, and the metal material forms the metal material layer by baking of the first baking module, wherein the sequential evaporation device includes a portion for providing a part of the a first insulating material evaporation module for insulating material, a conductive material evaporation module for providing the conductive material, a second insulating material evaporation module for providing another portion of the insulating material, and a first a baking module, wherein the insulating material forms the insulating material layer by baking of the second baking module, and the conductive material is formed by baking of the second baking module The conductive particles, wherein a size of the conductive particles and a percentage of the plurality of the conductive particles to the insulating material layer are determined by an evaporation amount of the insulating material and the conductive material when sequentially vapor-deposited. The method of fabricating a film capacitor according to claim 5, wherein the metal material layer forming apparatus comprises a metal material forming module for forming the metal material layer, and the sequential vapor deposition apparatus comprises one a first insulating material evaporation module for forming a portion of the insulating material layer, a conductive material evaporation module for forming the conductive particles, and a second insulating layer for forming another portion of the insulating material layer a material evaporation module, wherein a size of the conductive particles and a percentage of the plurality of conductive particles occupying the insulating material layer are determined by evaporation of the insulating material and the conductive material during sequential evaporation . A manufacturing apparatus for a multi-layer stack structure, comprising: a rotatable carrying platform for carrying a carrier substrate; a first material layer forming device, the first material layer forming device adjacent to the a rotatable carrying platform; and a second material layer forming apparatus disposed adjacent to the rotatable carrying platform; wherein the plurality of first material layers are formed by the first material layer Formed by the apparatus, a plurality of second material layers are formed by the second material layer forming apparatus, and one of the first material layer forming apparatus and the second material layer forming apparatus is sequentially steamed a plating apparatus; wherein the sequential evaporation apparatus separately supplies an insulating material and a conductive material by sequential evaporation to form the first material layer and the second material layer One of the layers; wherein a plurality of the first material layers and a plurality of the second material layers are alternately stacked on the carrier substrate to form the multilayer stacked structure. The manufacturing apparatus of the multi-layer stack structure according to claim 8, wherein the first material layer is a metal material layer, and the second material layer is an insulating material internally mixed with a plurality of randomly distributed conductive particles. a layer, wherein the first material layer forming apparatus is a metal material layer forming apparatus for forming the metal material layer, and the second material layer forming apparatus is the sequential vapor deposition apparatus, the insulating material The layer is formed by the insulating material provided by the sequential evaporation device, and the conductive particles are formed by the conductive material provided by the sequential evaporation device, wherein the metal material layer is formed The device comprises a metal material forming module for providing a metal material and a first baking module adjacent to the metal material forming module, and the metal material is baked by the first baking module. Forming the metal material layer, wherein the sequential vapor deposition apparatus includes a first insulating material evaporation module for providing a part of the insulating material, and a conductive material for providing the conductive material a vapor deposition module, a second insulating material evaporation module for providing another portion of the insulating material, and a second baking module, wherein the insulating material is baked by the second baking module And forming the insulating material layer, and the conductive material forms the conductive particles by baking of the second baking module, wherein a size of the conductive particles and a plurality of the conductive particles occupy the The percentage of the insulating material layer is determined by the amount of evaporation of the insulating material and the conductive material during sequential evaporation. The manufacturing apparatus of the multi-layer stack structure according to claim 8, wherein the first material layer is an insulating material layer internally mixed with a plurality of randomly distributed conductive particles, and the second material layer is a metal material. a layer, wherein the first material layer forming apparatus is the sequential vapor deposition apparatus, and the insulating material layer is formed by the insulating material provided by the sequential evaporation apparatus, and the conductive particles are Formed by the conductive material provided by the sequential vapor deposition apparatus, and the second material The layer forming apparatus is a metal material layer forming apparatus for forming the metal material layer, wherein the metal material layer forming apparatus includes a metal material forming module for providing a metal material and forming a metal material adjacent to the metal material a first baking module of the module, and the metal material is formed by the baking of the first baking module to form the metal material layer, wherein the sequential evaporation device includes one for providing a first insulating material evaporation module of the insulating material, a conductive material evaporation module for providing the conductive material, and a second insulating material evaporation module for providing another portion of the insulating material And a second baking module, the insulating material forms the insulating material layer by baking of the second baking module, and the conductive material is baked by the second baking module And forming the conductive particles, wherein a size of the conductive particles and a percentage of the plurality of conductive particles occupying the insulating material layer are evaporated by the insulating material and the conductive material in sequential evaporation Determined.