TW201911347A - Device for manufacturing a multi-layer stacked structure and method for manufacturing a thin film capacitor - Google Patents
Device for manufacturing a multi-layer stacked structure and method for manufacturing a thin film capacitor Download PDFInfo
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Abstract
Description
本發明涉及一種多層式堆疊結構的製作設備以及薄膜電容器的製作方法,特別是涉及一種用於提升介電常數的多層式堆疊結構的製作設備以及薄膜電容器的製作方法。 The present invention relates to a fabrication apparatus of a multilayer stacked structure and a method of fabricating a film capacitor, and more particularly to a fabrication apparatus for a multilayer stacked structure for improving dielectric constant and a method of fabricating a film capacitor.
電容器已廣泛地被使用於消費性家電用品、電腦主機板及其周邊、電源供應器、通訊產品、及汽車等的基本元件,其主要的作用包括:濾波、旁路、整流、耦合、去耦、轉相等。是電子產品中不可缺少的元件之一。電容器依照不同的材質及用途,有不同的型態。包括鋁質電解電容、鉭質電解電容、積層陶瓷電容、薄膜電容等。現有技術所製作出的薄膜電容器的整體結構過於複雜而需要改善,並且現有技術所製作出的薄膜電容器所能提供的介電常數過低而需要改善。 Capacitors have been widely used in consumer appliances, computer motherboards and their peripherals, power supplies, communication products, and automotive basic components, including: filtering, bypass, rectification, coupling, decoupling And turn equal. It is one of the indispensable components in electronic products. Capacitors have different types according to different materials and uses. Including aluminum electrolytic capacitors, tantalum electrolytic capacitors, multilayer ceramic capacitors, film capacitors and so on. The overall structure of the film capacitor fabricated by the prior art is too complicated and needs to be improved, and the dielectric constant which the film capacitor manufactured by the prior art can provide is too low and needs to be improved.
本發明所要解決的技術問題在於,針對現有技術的不足提供一種多層式堆疊結構的製作設備以及薄膜電容器的製作方法。 The technical problem to be solved by the present invention is to provide a manufacturing apparatus of a multilayer stacked structure and a manufacturing method of the film capacitor in view of the deficiencies of the prior art.
為了解決上述的技術問題,本發明所採用的其中一技術方案是,提供一種薄膜電容器的製作方法,其包括:提供一承載基板;形成多個第一材料層以及多個第二材料層,其中,多個所述第一材料層與多個所述第二材料層交替堆疊在所述承載基板上,以形 成一多層式堆疊結構;以及,形成兩個端電極結構,以分別包覆所述多層式堆疊結構的兩相反側端部。其中,每一個所述第一材料層由一第一材料層成型設備所形成,每一個所述第二材料層由一第二材料層成型設備所形成,且所述第一材料層成型設備與所述第二材料層成型設備兩者其中之一為一依序蒸鍍設備;其中,所述依序蒸鍍設備通過依序蒸鍍的方式分別提供絕緣材料與導電材料,以形成所述第一材料層與所述第二材料層兩者其中之一層。 In order to solve the above technical problem, one technical solution adopted by the present invention is to provide a method for fabricating a film capacitor, comprising: providing a carrier substrate; forming a plurality of first material layers and a plurality of second material layers, wherein a plurality of the first material layers and a plurality of the second material layers are alternately stacked on the carrier substrate to form a multi-layer stack structure; and two end electrode structures are formed to respectively coat the The opposite side ends of the multilayer stack structure are described. Wherein each of the first material layers is formed by a first material layer forming apparatus, each of the second material layers is formed by a second material layer forming apparatus, and the first material layer forming apparatus and One of the second material layer forming apparatuses is a sequential vapor deposition apparatus; wherein the sequential vapor deposition apparatus separately supplies an insulating material and a conductive material by sequential evaporation to form the first One of a layer of material and one of the second layer of material.
為了解決上述的技術問題,本發明所採用的另外一技術方案是,提供一種多層式堆疊結構的製作設備,其包括:一可旋轉承載台、一第一材料層成型設備以及一第二材料層成型設備。所述可旋轉承載台用於承載一承載基板。所述第一材料層成型設備鄰近所述可旋轉承載台而設置。所述第二材料層成型設備鄰近所述可旋轉承載台而設置。其中,多個第一材料層由所述第一材料層成型設備所形成,多個第二材料層由所述第二材料層成型設備所形成,且所述第一材料層成型設備與所述第二材料層成型設備兩者其中之一為一依序蒸鍍設備。其中,所述依序蒸鍍設備通過依序蒸鍍的方式分別提供絕緣材料與導電材料,以形成所述第一材料層與所述第二材料層兩者其中之一層。其中,多個所述第一材料層與多個所述第二材料層交替堆疊在所述承載基板上,以形成所述多層式堆疊結構。 In order to solve the above technical problem, another technical solution adopted by the present invention is to provide a manufacturing apparatus of a multi-layer stacked structure, comprising: a rotatable carrying platform, a first material layer forming device, and a second material layer. Molding equipment. The rotatable carrier is configured to carry a carrier substrate. The first material layer forming apparatus is disposed adjacent to the rotatable deck. The second material layer forming apparatus is disposed adjacent to the rotatable deck. Wherein a plurality of first material layers are formed by the first material layer forming apparatus, a plurality of second material layers are formed by the second material layer forming apparatus, and the first material layer forming apparatus and the One of the two material layer forming apparatuses is a sequential vapor deposition apparatus. Wherein, the sequential evaporation device separately supplies an insulating material and a conductive material by sequential evaporation to form one of the first material layer and the second material layer. Wherein, a plurality of the first material layers and a plurality of the second material layers are alternately stacked on the carrier substrate to form the multilayer stacked structure.
本發明的其中一有益效果在於,本發明所提供的一種多層式堆疊結構的製作設備以及薄膜電容器的製作方法,其能通過“所述第一材料層成型設備與所述第二材料層成型設備兩者其中之一為一依序蒸鍍設備”以及“所述依序蒸鍍設備通過依序蒸鍍的方式分別提供絕緣材料與導電材料”的技術方案,以形成所述第一材料層與所述第二材料層兩者其中之一層,並且多個所述第一材料層與多個所述第二材料層交替堆疊在所述承載基板上,以形成一多層式堆疊結構。 One of the beneficial effects of the present invention is that the manufacturing apparatus of the multilayer stacked structure and the manufacturing method of the film capacitor provided by the present invention can pass the "first material layer forming apparatus and the second material layer forming apparatus" One of the two is a sequential vapor deposition apparatus" and "the sequential vapor deposition apparatus separately provides an insulating material and a conductive material by sequential evaporation" to form the first material layer and One of the second material layers is one of the layers, and a plurality of the first material layers and the plurality of the second material layers are alternately stacked on the carrier substrate to form a multi-layer stack structure.
為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。 For a better understanding of the features and technical aspects of the present invention, reference should be made to the detailed description and drawings of the invention.
R‧‧‧可旋轉承載台 R‧‧‧Rotatable platform
D1‧‧‧第一材料層成型設備 D1‧‧‧First material layer forming equipment
D2‧‧‧第二材料層成型設備 D2‧‧‧Second material layer forming equipment
F‧‧‧金屬材料層成型設備 F‧‧‧Metal material layer forming equipment
F1‧‧‧金屬材料成型模組 F1‧‧‧Metal material forming module
F2‧‧‧第一烘烤模組 F2‧‧‧First baking module
V‧‧‧依序蒸鍍設備 V‧‧‧Sequential evaporation equipment
V11‧‧‧第一絕緣材料蒸鍍模組 V11‧‧‧First Insulation Material Evaporation Module
V12‧‧‧第二絕緣材料蒸鍍模組 V12‧‧‧Second insulation material evaporation module
V2‧‧‧導電材料蒸鍍模組 V2‧‧‧ Conductive material evaporation module
V3‧‧‧第二烘烤模組 V3‧‧‧second baking module
Z‧‧‧薄膜電容器 Z‧‧‧ film capacitor
1‧‧‧多層式堆疊結構 1‧‧‧Multilayer stacking structure
10‧‧‧承載基板 10‧‧‧Loading substrate
11‧‧‧金屬材料層 11‧‧‧Metal material layer
12‧‧‧絕緣材料層 12‧‧‧Insulation layer
120‧‧‧導電顆粒 120‧‧‧Electrical particles
121‧‧‧第一部分絕緣材料層 121‧‧‧The first part of the insulating material layer
122‧‧‧第二部分絕緣材料層 122‧‧‧Second part of insulating material layer
L1‧‧‧第一材料層 L1‧‧‧ first material layer
L2‧‧‧第二材料層 L2‧‧‧Second material layer
M1‧‧‧金屬材料 M1‧‧‧Metal materials
M2‧‧‧絕緣材料 M2‧‧‧Insulation material
M21‧‧‧第一部分絕緣材料 M21‧‧‧Part 1 Insulation
M22‧‧‧第二部分絕緣材料 M22‧‧‧Second part insulation material
M3‧‧‧導電材料 M3‧‧‧ conductive materials
2‧‧‧端電極結構 2‧‧‧End electrode structure
20P‧‧‧側端部 20P‧‧‧ side end
21‧‧‧第一包覆層 21‧‧‧First cladding
22‧‧‧第二包覆層 22‧‧‧Second coating
23‧‧‧第三包覆層 23‧‧‧ Third cladding
P‧‧‧封裝膠體 P‧‧‧Package colloid
H‧‧‧金屬殼體 H‧‧‧Metal housing
L‧‧‧導電引腳 L‧‧‧conductive pin
圖1為本發明的薄膜電容器的製作方法的流程圖。 1 is a flow chart of a method of fabricating a film capacitor of the present invention.
圖2為本發明第一實施例的多層式堆疊結構的製作設備的示意圖。 2 is a schematic view of a manufacturing apparatus of a multi-layer stack structure according to a first embodiment of the present invention.
圖3為本發明第一實施例的薄膜電容器的製作方法中形成金屬材料的加工示意圖。 3 is a schematic view showing the processing of forming a metal material in the method of fabricating the film capacitor of the first embodiment of the present invention.
圖4為本發明第一實施例的薄膜電容器的製作方法中形成金屬材料層的加工示意圖。 4 is a schematic view showing the processing of forming a metal material layer in the method of fabricating the film capacitor of the first embodiment of the present invention.
圖5為本發明第一實施例的薄膜電容器的製作方法中形成第一部分絕緣材料的加工示意圖。 FIG. 5 is a schematic view showing the processing of forming a first portion of an insulating material in a method of fabricating a film capacitor according to a first embodiment of the present invention.
圖6為本發明第一實施例的薄膜電容器的製作方法中形成導電材料的加工示意圖。 Fig. 6 is a schematic view showing the processing of forming a conductive material in the method of fabricating a film capacitor according to the first embodiment of the present invention.
圖7本發明第一實施例的薄膜電容器的製作方法中形成第二部分絕緣材料的加工示意圖。 Fig. 7 is a schematic view showing the processing of forming a second portion of the insulating material in the method of fabricating the film capacitor of the first embodiment of the present invention.
圖8為本發明第一實施例的薄膜電容器的製作方法中形成內部混入多個隨機分布的導電顆粒的絕緣材料層的加工示意圖。 Fig. 8 is a schematic view showing the processing of forming an insulating material layer in which a plurality of randomly distributed conductive particles are internally mixed in the method for fabricating a film capacitor according to the first embodiment of the present invention.
圖9為本發明第一實施例的薄膜電容器的示意圖。 Fig. 9 is a schematic view showing a film capacitor of the first embodiment of the present invention.
圖10為本發明第一實施例的其中一種薄膜電容器封裝結構的示意圖。 Figure 10 is a schematic illustration of one of the film capacitor package structures of the first embodiment of the present invention.
圖11為本發明第一實施例的另外一種薄膜電容器封裝結構的示意圖。 FIG. 11 is a schematic view showing another film capacitor package structure according to the first embodiment of the present invention.
圖12為本發明第二實施例的多層式堆疊結構的製作設備的示意圖。 FIG. 12 is a schematic diagram of a manufacturing apparatus of a multi-layer stack structure according to a second embodiment of the present invention.
圖13為本發明第二實施例的薄膜電容器的製作方法中形成第一部分絕緣材料的加工示意圖。 Figure 13 is a schematic view showing the processing of forming a first portion of an insulating material in a method of fabricating a film capacitor in accordance with a second embodiment of the present invention.
圖14為本發明第二實施例的薄膜電容器的製作方法中形成導電材料的加工示意圖。 Figure 14 is a schematic view showing the processing of forming a conductive material in a method of fabricating a film capacitor according to a second embodiment of the present invention.
圖15為本發明第二實施例的薄膜電容器的製作方法中形成第二部分絕緣材料的加工示意圖。 Figure 15 is a schematic view showing the processing of forming a second portion of an insulating material in a method of fabricating a film capacitor according to a second embodiment of the present invention.
圖16為本發明第二實施例的薄膜電容器的製作方法中形成內部混入多個隨機分布的導電顆粒的絕緣材料層的加工示意圖。 Fig. 16 is a schematic view showing the processing of forming an insulating material layer in which a plurality of randomly distributed conductive particles are mixed in the method of fabricating a film capacitor according to a second embodiment of the present invention.
圖17為本發明第二實施例的薄膜電容器的製作方法中形成金屬材料的加工示意圖。 Figure 17 is a schematic view showing the processing of forming a metal material in a method of fabricating a film capacitor according to a second embodiment of the present invention.
圖18為本發明第二實施例的薄膜電容器的製作方法中形成金屬材料層的加工示意圖。 Fig. 18 is a schematic view showing the processing of forming a metal material layer in the method of fabricating a film capacitor according to a second embodiment of the present invention.
以下是通過特定的具體實施例來說明本發明所公開有關“多層式堆疊結構的製作設備以及薄膜電容器的製作方法”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。 The following is a description of an embodiment of the present invention relating to a "multilayer stacked structure fabrication apparatus and a method for fabricating a film capacitor" by a specific embodiment, and those skilled in the art can understand the advantages of the present invention from the disclosure of the present specification. With the effect. The invention can be implemented or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. In addition, the drawings of the present invention are merely illustrative and are not intended to be stated in the actual size. The following embodiments will further explain the related technical content of the present invention, but the disclosure is not intended to limit the scope of the present invention.
請參閱圖1至圖9所示,本發明第一實施例提供一種多層式堆疊結構的製作設備,其包括:一可旋轉承載台R、一第一材料層成型設備D1以及一第二材料層成型設備D2。 Referring to FIG. 1 to FIG. 9 , a first embodiment of the present invention provides a manufacturing apparatus for a multi-layer stack structure, including: a rotatable carrier R, a first material layer forming device D1, and a second material layer. Molding equipment D2.
更進一步來說,可旋轉承載台R能用於承載一承載基板10,第一材料層成型設備D1鄰近可旋轉承載台R而設置,並且第二材料層成型設備D2鄰近可旋轉承載台R而設置。另外,多個第一材 料層L1可由第一材料層成型設備D1所形成,多個第二材料層L2可由第二材料層成型設備D2所形成,並且第一材料層成型設備D1與第二材料層成型設備D2兩者其中之一為一依序蒸鍍設備V。此外,依序蒸鍍設備V能通過依序蒸鍍的方式分別提供絕緣材料M2與導電材料M3,以形成第一材料層L1與第二材料層L2兩者其中之一層。藉此,多個第一材料層L1與多個第二材料層L2會交替堆疊在承載基板10上,以形成多層式堆疊結構1(如圖9所示)。 Furthermore, the rotatable carrier R can be used to carry a carrier substrate 10, the first material layer forming device D1 is disposed adjacent to the rotatable carrier R, and the second material layer forming device D2 is adjacent to the rotatable carrier R Settings. In addition, the plurality of first material layers L1 may be formed by the first material layer forming apparatus D1, the plurality of second material layers L2 may be formed by the second material layer forming apparatus D2, and the first material layer forming apparatus D1 and the second material One of the layer forming apparatuses D2 is a sequential vapor deposition apparatus V. In addition, the sequential vapor deposition apparatus V can separately provide the insulating material M2 and the conductive material M3 by sequential evaporation to form one of the first material layer L1 and the second material layer L2. Thereby, a plurality of first material layers L1 and a plurality of second material layers L2 are alternately stacked on the carrier substrate 10 to form a multilayer stacked structure 1 (as shown in FIG. 9).
舉例來說,本發明所提供的一種多層式堆疊結構的製作設備可以被放置在一真空的環境下操作,或者是非真空的環境下操作。 For example, the fabrication apparatus of a multi-layer stack structure provided by the present invention can be operated in a vacuum environment or in a non-vacuum environment.
請參閱圖1至圖9所示,本發明提供一種薄膜電容器的製作方法,其至少可包括下例步驟:首先,提供一承載基板10(S100);接著,形成多個第一材料層L1以及多個第二材料層L2,其中,多個第一材料層L1與多個第二材料層L2交替堆疊在承載基板10上,以形成一多層式堆疊結構1(S102);然後,形成兩個端電極結構2,以分別包覆多層式堆疊結構1的兩相反側端部20P(S104),以完成薄膜電容器Z的製作(如圖9所示)。舉例來說,承載基板10可為一由任何的導電材料(例如銅、鋁等)所製成的導電基板,或者一由任何的絕緣材料(例如PMMA、PP、PET等)所製成的絕緣基板。 Referring to FIG. 1 to FIG. 9 , the present invention provides a method for fabricating a film capacitor, which may include at least the following steps: first, providing a carrier substrate 10 (S100); then, forming a plurality of first material layers L1 and a plurality of second material layers L2, wherein a plurality of first material layers L1 and a plurality of second material layers L2 are alternately stacked on the carrier substrate 10 to form a multi-layer stacked structure 1 (S102); The end electrode structures 2 are respectively wrapped around the opposite side end portions 20P of the multilayer stacked structure 1 (S104) to complete the fabrication of the film capacitor Z (as shown in FIG. 9). For example, the carrier substrate 10 can be a conductive substrate made of any conductive material (such as copper, aluminum, etc.) or an insulation made of any insulating material (such as PMMA, PP, PET, etc.). Substrate.
更進一步來說,每一個第一材料層L1可由一第一材料層成型設備D1所形成,每一個第二材料層L2可由一第二材料層成型設備D2所形成,並且第一材料層成型設備D1與第二材料層成型設備D2兩者其中之一為一依序蒸鍍設備V。另外,依序蒸鍍設備V能通過依序蒸鍍的方式分別提供絕緣材料M2與導電材料M3,以形成第一材料層L1與第二材料層L2兩者其中之一層。 Further, each of the first material layers L1 may be formed by a first material layer forming apparatus D1, each of the second material layers L2 may be formed by a second material layer forming apparatus D2, and the first material layer forming apparatus One of D1 and the second material layer forming apparatus D2 is a sequential vapor deposition apparatus V. In addition, the sequential vapor deposition apparatus V can separately provide the insulating material M2 and the conductive material M3 by sequential evaporation to form one of the first material layer L1 and the second material layer L2.
舉例來說,第一材料層L1可為一金屬材料層11,並且第二材料層L2可為一內部混入多個隨機分布的導電顆粒120的絕緣材料 層12,也就是說,多個導電顆粒120是以隨機分布的方式所形成而呈現非均勻的排列。另外,第一材料層成型設備D1可為一用於形成金屬材料層11的金屬材料層成型設備F,並且第二材料層成型設備D2可為依序蒸鍍設備V。此外,絕緣材料層12可由依序蒸鍍設備V所提供的絕緣材料M2所形成,並且導電顆粒120可由依序蒸鍍設備V所提供的導電材料M3所形成。值得注意的是,由於每一個絕緣材料層12的內部混有多個導電顆粒120,所以能夠提升薄膜電容器Z及其多層式堆疊結構1的介電係數或者介電常數。 For example, the first material layer L1 may be a metal material layer 11, and the second material layer L2 may be an insulating material layer 12 internally mixed with a plurality of randomly distributed conductive particles 120, that is, a plurality of conductive particles. 120 is formed in a randomly distributed manner to present a non-uniform arrangement. In addition, the first material layer forming apparatus D1 may be a metal material layer forming apparatus F for forming the metal material layer 11, and the second material layer forming apparatus D2 may be a sequential vapor deposition apparatus V. Further, the insulating material layer 12 may be formed of the insulating material M2 provided by the sequential evaporation apparatus V, and the conductive particles 120 may be formed of the conductive material M3 provided by the sequential evaporation apparatus V. It is to be noted that since a plurality of conductive particles 120 are mixed inside each of the insulating material layers 12, the dielectric constant or dielectric constant of the film capacitor Z and its multilayer stacked structure 1 can be improved.
舉例來說,金屬材料層成型設備F包括一用於提供金屬材料M1的金屬材料成型模組F1以及一鄰近金屬材料成型模組F1的第一烘烤模組F2,並且金屬材料M1能通過第一烘烤模組F2的烘烤而形成金屬材料層11。更進一步來說,配合圖2、圖3以及圖4所示,首先,金屬材料M1(例如銅、鋁等)會先通過金屬材料成型模組F1先通過而形成在承載基板10上,然後金屬材料M1再通過第一烘烤模組F2的烘烤而形成金屬材料層11。值得注意的是,金屬材料成型模組F1可以通過塗佈(coating)、噴塗(spraying)或印刷(printing)等方式來提供金屬材料M1,然而本發明不以此舉例為限。 For example, the metal material layer forming apparatus F includes a metal material forming module F1 for providing the metal material M1 and a first baking module F2 adjacent to the metal material forming module F1, and the metal material M1 can pass the first The baking of the baking module F2 forms a layer 11 of the metal material. Furthermore, as shown in FIG. 2, FIG. 3 and FIG. 4, first, the metal material M1 (for example, copper, aluminum, etc.) is first formed on the carrier substrate 10 through the metal material molding module F1, and then the metal. The material M1 is further formed into a metal material layer 11 by baking of the first baking module F2. It is to be noted that the metal material forming module F1 may provide the metal material M1 by coating, spraying, or printing, but the invention is not limited by the examples.
舉例來說,依序蒸鍍設備V包括一用於提供其中一部分絕緣材料M2(亦即第一部分絕緣材料M21)的第一絕緣材料蒸鍍模組V11、一用於提供導電材料M3的導電材料蒸鍍模組V2、一用於提供另外一部分絕緣材料M2(亦即第二部分絕緣材料M22)的第二絕緣材料蒸鍍模組V12以及一第二烘烤模組V3。另外,絕緣材料M2能通過第二烘烤模組V3的烘烤而形成絕緣材料層12,並且導電材料M3能通過第二烘烤模組V3的烘烤而形成導電顆粒120。更進一步來說,配合圖2以及圖5至圖8所示,首先,第一部分絕緣材料M21(例如PMMA、PP、PET、mylar、polystyrene、 polycarbonate、acrylate等)會通過第一絕緣材料蒸鍍模組V11而形成在金屬材料層11上,並且導電材料M3(例如銅、鋁、銦等)會通過導電材料蒸鍍模組V2而形成在第一部分絕緣材料M21上;然後,第二部分絕緣材料M22再通過第二絕緣材料蒸鍍模組V12而形成在第一部分絕緣材料M21上以覆蓋導電材料M3;最後,絕緣材料M2能通過第二烘烤模組V3的烘烤而形成絕緣材料層12(也就是說,第一部分絕緣材料M21能通過第二烘烤模組V3的烘烤而形成第一部分絕緣材料層121,並且第二部分絕緣材料M22能通過第二烘烤模組V3的烘烤而形成第二部分絕緣材料層122),並且導電材料M3能通過第二烘烤模組V3的烘烤而形成導電顆粒120。然而,本發明不以此舉例為限。 For example, the sequential evaporation apparatus V includes a first insulating material evaporation module V11 for providing a part of the insulating material M2 (that is, the first partial insulating material M21), and a conductive material for providing the conductive material M3. The vapor deposition module V2 is a second insulating material vapor deposition module V12 for providing another part of the insulating material M2 (that is, the second portion of the insulating material M22) and a second baking module V3. In addition, the insulating material M2 can form the insulating material layer 12 by baking of the second baking module V3, and the conductive material M3 can form the conductive particles 120 by baking of the second baking module V3. Furthermore, as shown in FIG. 2 and FIG. 5 to FIG. 8 , first, the first portion of the insulating material M21 (eg, PMMA, PP, PET, mylar, polystyrene, polycarbonate, acrylate, etc.) passes through the first insulating material evaporation mold. The group V11 is formed on the metal material layer 11, and the conductive material M3 (for example, copper, aluminum, indium, etc.) is formed on the first portion of the insulating material M21 through the conductive material evaporation module V2; then, the second portion of the insulating material The M22 is formed on the first portion of the insulating material M21 to cover the conductive material M3 through the second insulating material evaporation module V12. Finally, the insulating material M2 can form the insulating material layer 12 by baking the second baking module V3. (That is, the first portion of the insulating material M21 can form the first portion of the insulating material layer 121 by baking of the second baking module V3, and the second portion of the insulating material M22 can pass the baking of the second baking module V3. The second portion of the insulating material layer 122) is formed, and the conductive material M3 can form the conductive particles 120 by baking of the second baking module V3. However, the invention is not limited by this example.
值得一提的是,當導電材料M3通過導電材料蒸鍍模組V2而形成在絕緣材料M2上後,也可以直接烘烤導電材料M3,藉此以提升導電顆粒120的圓弧度,讓導電顆粒120更趨近於球狀。 It is worth mentioning that after the conductive material M3 is formed on the insulating material M2 through the conductive material evaporation module V2, the conductive material M3 can also be directly baked, thereby increasing the circularity of the conductive particles 120 and making the conductive The particles 120 are closer to a sphere.
值得一提的是,配合圖6與圖8所示,“導電顆粒120的尺寸”以及“多個導電顆粒120佔絕緣材料層12的百分比”均可由絕緣材料M2(亦即第一部分絕緣材料M21與第二部分絕緣材料M22)與導電材料M3在依序蒸鍍時的蒸發量(evaporation)所決定。舉例來說,盛裝絕緣材料M2的蒸發皿的開口面積大小會影響絕緣材料M2在依序蒸鍍時的蒸發量,並且盛裝導電材料M3的蒸發皿的開口面積大小會影響導電材料M3在依序蒸鍍時的蒸發量。再者,絕緣材料層12的絕緣材料M2與導電材料M3的比例可以由絕緣材料層12的阻抗值來決定。舉例來說,絕緣材料層12的阻抗值在大幅降低時,可以得到絕緣材料層12的絕緣材料M2與導電材料M3的比例的最大值。 It should be noted that, as shown in FIG. 6 and FIG. 8, "the size of the conductive particles 120" and "the percentage of the plurality of conductive particles 120 occupying the insulating material layer 12" may be made of the insulating material M2 (that is, the first portion of the insulating material M21). The evaporation of the second portion of the insulating material M22) and the conductive material M3 in the order of vapor deposition is determined. For example, the opening area of the evaporating dish containing the insulating material M2 affects the evaporation amount of the insulating material M2 in the sequential evaporation, and the opening area of the evaporating dish containing the conductive material M3 affects the conductive material M3 in order. The amount of evaporation during vapor deposition. Furthermore, the ratio of the insulating material M2 of the insulating material layer 12 to the conductive material M3 can be determined by the impedance value of the insulating material layer 12. For example, when the impedance value of the insulating material layer 12 is greatly reduced, the maximum value of the ratio of the insulating material M2 of the insulating material layer 12 to the conductive material M3 can be obtained.
舉例來說,如圖9所示,每一個端電極結構2包括一用於包覆多層式堆疊結構1的側端部20P的第一包覆層21、一用於包覆第一包覆層21的第二包覆層22以及一用於包覆第二包覆層22的 第三包覆層23。另外,第一包覆層21、第二包覆層22以及第三包覆層23可以分別為銀層、鎳層以及錫層,然而本發明不以此舉例為限。 For example, as shown in FIG. 9, each of the terminal electrode structures 2 includes a first cladding layer 21 for covering the side end portions 20P of the multilayer stack structure 1, and a cladding layer for coating the first cladding layer. The second cladding layer 22 of 21 and a third cladding layer 23 for coating the second cladding layer 22. In addition, the first cladding layer 21, the second cladding layer 22, and the third cladding layer 23 may be a silver layer, a nickel layer, and a tin layer, respectively, but the invention is not limited by the examples.
舉例來說,配合圖9以及圖10所示,薄膜電容器Z可以先通過一封裝膠體P(可由絕緣材料所製成)進行封裝,然後再將電性連接於薄膜電容器Z的兩個導電引腳L從薄膜電容器Z延伸至封裝膠體P的外部,藉此以完成其中一種薄膜電容器封裝結構的製作。另外,配合圖9以及圖11所示,薄膜電容器Z可以先通過一封裝膠體P進行封裝,然後再將被封裝膠體P所封裝的薄膜電容器Z容置在一金屬殼體H(例如鋁殼)內,最後再將電性連接於薄膜電容器Z的兩個導電引腳L從薄膜電容器Z延伸至金屬殼體H的外部,藉此以完成另一種薄膜電容器封裝結構的製作。也就是說,多層式堆疊結構1以及兩個端電極結構2都會被一封裝膠體P所包覆,且兩個導電引腳L可分別電性接觸兩個端電極結構2且從封裝膠體P裸露而出。然而,本發明的薄膜電容器封裝結構不以上述所舉的例子為限。 For example, as shown in FIG. 9 and FIG. 10, the film capacitor Z can be first packaged through an encapsulant P (which can be made of an insulating material), and then electrically connected to the two conductive pins of the film capacitor Z. L extends from the film capacitor Z to the outside of the encapsulant P, thereby completing the fabrication of one of the film capacitor package structures. In addition, as shown in FIG. 9 and FIG. 11, the film capacitor Z can be first packaged by an encapsulant P, and then the film capacitor Z encapsulated by the encapsulant P is housed in a metal case H (for example, an aluminum case). Finally, the two conductive pins L electrically connected to the film capacitor Z are finally extended from the film capacitor Z to the outside of the metal case H, thereby completing the fabrication of another film capacitor package structure. That is, the multi-layer stack structure 1 and the two end electrode structures 2 are both covered by an encapsulant P, and the two conductive pins L can electrically contact the two end electrode structures 2 and are exposed from the encapsulant P, respectively. And out. However, the film capacitor package structure of the present invention is not limited to the above-exemplified examples.
值得注意的是,本發明第一實施例也可以省略第一烘烤模組F2與第二烘烤模組V3的使用。也就是說,金屬材料層成型設備F包括一可直接用於成形金屬材料層11的金屬材料成型模組F1,並且依序蒸鍍設備V包括一可直接用於成形其中一部分絕緣材料層12(亦即第一部分絕緣材料層121)的第一絕緣材料蒸鍍模組V11、一可直接用於成形導電顆粒120的導電材料蒸鍍模組V2以及一可直接用於成形另外一部分絕緣材料層12(亦即第二部分絕緣材料層122)的第二絕緣材料蒸鍍模組V12。 It should be noted that the first embodiment of the present invention can also omit the use of the first baking module F2 and the second baking module V3. That is, the metal material layer forming apparatus F includes a metal material forming module F1 which can be directly used for forming the metal material layer 11, and the sequential vapor deposition apparatus V includes a layer 12 for directly forming the insulating material 12 ( That is, the first insulating material evaporation module V11 of the first partial insulating material layer 121), the conductive material evaporation module V2 which can be directly used for forming the conductive particles 120, and one layer can be directly used for forming another portion of the insulating material layer 12 The second insulating material evaporation module V12 (ie, the second portion of the insulating material layer 122).
請參閱圖12至圖18所示,本發明第二實施例提供一種多層式堆疊結構的製作設備以及薄膜電容器的製作方法。由圖12~18 與圖2~8的比較可知,本發明第二實施例與第一實施例最大的差別在於:首先,在第二實施例中,第一材料層L1可為一內部混入多個隨機分布的導電顆粒120的絕緣材料層12,並且第二材料層L2可為一金屬材料層11。另外,第一材料層成型設備D1可為依序蒸鍍設備V,並且第二材料層成型設備D2可為一用於形成金屬材料層11的金屬材料層成型設備F。此外,絕緣材料層12可由依序蒸鍍設備V所提供的絕緣材料M2所形成,並且導電顆粒120可由依序蒸鍍設備V所提供的導電材料M3所形成。 Referring to FIG. 12 to FIG. 18, a second embodiment of the present invention provides a manufacturing apparatus of a multi-layer stacked structure and a manufacturing method of the film capacitor. 12 to 18 and FIG. 2 to 8 show that the greatest difference between the second embodiment of the present invention and the first embodiment is that, firstly, in the second embodiment, the first material layer L1 can be internally mixed. The insulating material layer 12 of the randomly distributed conductive particles 120, and the second material layer L2 may be a metal material layer 11. In addition, the first material layer forming apparatus D1 may be a sequential vapor deposition apparatus V, and the second material layer forming apparatus D2 may be a metal material layer forming apparatus F for forming the metal material layer 11. Further, the insulating material layer 12 may be formed of the insulating material M2 provided by the sequential evaporation apparatus V, and the conductive particles 120 may be formed of the conductive material M3 provided by the sequential evaporation apparatus V.
此外,在第二實施例中,依序蒸鍍設備V包括一用於提供其中一部分絕緣材料M2(亦即第一部分絕緣材料M21)的第一絕緣材料蒸鍍模組V11、一用於提供導電材料M3的導電材料蒸鍍模組V2、一用於提供另外一部分絕緣材料M2(亦即第二部分絕緣材料M22)的第二絕緣材料蒸鍍模組V12以及一第二烘烤模組V3。另外,絕緣材料M2能通過第二烘烤模組V3的烘烤而形成絕緣材料層12,並且導電材料M3能通過第二烘烤模組V3的烘烤而形成導電顆粒120。 In addition, in the second embodiment, the sequential vapor deposition apparatus V includes a first insulating material evaporation module V11 for providing a part of the insulating material M2 (that is, the first partial insulating material M21), and one for providing conductivity. The conductive material evaporation module V2 of the material M3 is a second insulating material evaporation module V12 for providing another part of the insulating material M2 (that is, the second partial insulating material M22) and a second baking module V3. In addition, the insulating material M2 can form the insulating material layer 12 by baking of the second baking module V3, and the conductive material M3 can form the conductive particles 120 by baking of the second baking module V3.
更進一步來說,配合圖12以及圖13至圖16所示,首先,第一部分絕緣材料M21(例如PMMA、PP、PET等)會通過第一絕緣材料蒸鍍模組V11而形成在承載基板10上,並且導電材料M3(例如銅、鋁等)會通過導電材料蒸鍍模組V2而形成在第一部分絕緣材料M21上;然後,第二部分絕緣材料M22再通過第二絕緣材料蒸鍍模組V12而形成在第一部分絕緣材料M21上以覆蓋導電材料M3;最後,絕緣材料M2能通過第二烘烤模組V3的烘烤而形成絕緣材料層12(也就是說,第一部分絕緣材料M21能通過第二烘烤模組V3的烘烤而形成第一部分絕緣材料層121,並且第二部分絕緣材料M22能通過第二烘烤模組V3的烘烤而形成第二部分絕緣材料層122),並且導電材料M3能通過第二烘烤模組V3 的烘烤而形成導電顆粒120。然而,本發明不以此舉例為限。 Furthermore, as shown in FIG. 12 and FIG. 13 to FIG. 16, first, the first partial insulating material M21 (for example, PMMA, PP, PET, etc.) is formed on the carrier substrate 10 through the first insulating material evaporation module V11. Upper, and the conductive material M3 (such as copper, aluminum, etc.) is formed on the first portion of the insulating material M21 through the conductive material evaporation module V2; then, the second portion of the insulating material M22 is passed through the second insulating material evaporation module V12 is formed on the first portion of the insulating material M21 to cover the conductive material M3; finally, the insulating material M2 can form the insulating material layer 12 by baking of the second baking module V3 (that is, the first portion of the insulating material M21 can Forming a first portion of the insulating material layer 121 by baking of the second baking module V3, and forming a second portion of the insulating material layer 122 by the baking of the second baking module V3. And the conductive material M3 can form the conductive particles 120 by baking of the second baking module V3. However, the invention is not limited by this example.
再者,在第二實施例中,金屬材料層成型設備F包括一用於提供金屬材料M1的金屬材料成型模組F1以及一鄰近金屬材料成型模組F1的第一烘烤模組F2,並且金屬材料M1能通過第一烘烤模組F2的烘烤而形成金屬材料層11。更進一步來說,配合圖12、圖17以及圖18所示,首先,金屬材料M1(例如銅、鋁等)會先通過金屬材料成型模組F1先通過而形成在絕緣材料層12上,然後金屬材料M1再通過第一烘烤模組F2的烘烤而形成金屬材料層11。值得注意的是,金屬材料成型模組F1可以通過塗佈(coating)、噴塗(spraying)或印刷(printing)等方式來提供金屬材料M1,然而本發明不以此舉例為限。 Furthermore, in the second embodiment, the metal material layer forming apparatus F includes a metal material forming module F1 for providing the metal material M1 and a first baking module F2 adjacent to the metal material forming module F1, and The metal material M1 can form the metal material layer 11 by baking of the first baking module F2. Furthermore, as shown in FIG. 12, FIG. 17, and FIG. 18, first, the metal material M1 (for example, copper, aluminum, etc.) is first formed on the insulating material layer 12 by the metal material forming module F1, and then The metal material M1 is further formed into a metal material layer 11 by baking of the first baking module F2. It is to be noted that the metal material forming module F1 may provide the metal material M1 by coating, spraying, or printing, but the invention is not limited by the examples.
值得注意的是,本發明第二實施例也可以省略第一烘烤模組F2與第二烘烤模組V3的使用。也就是說,金屬材料層成型設備F包括一可直接用於成形金屬材料層11的金屬材料成型模組F1,並且依序蒸鍍設備V包括一可直接用於成形其中一部分絕緣材料層12(亦即第一部分絕緣材料層121)的第一絕緣材料蒸鍍模組V11、一可直接用於成形導電顆粒120的導電材料蒸鍍模組V2以及一可直接用於成形另外一部分絕緣材料層12(亦即第二部分絕緣材料層122)的第二絕緣材料蒸鍍模組V12。 It should be noted that the second embodiment of the present invention can also omit the use of the first baking module F2 and the second baking module V3. That is, the metal material layer forming apparatus F includes a metal material forming module F1 which can be directly used for forming the metal material layer 11, and the sequential vapor deposition apparatus V includes a layer 12 for directly forming the insulating material 12 ( That is, the first insulating material evaporation module V11 of the first partial insulating material layer 121), the conductive material evaporation module V2 which can be directly used for forming the conductive particles 120, and one layer can be directly used for forming another portion of the insulating material layer 12 The second insulating material evaporation module V12 (ie, the second portion of the insulating material layer 122).
本發明的其中一有益效果在於,本發明所提供的一種多層式堆疊結構的製作設備以及薄膜電容器的製作方法,其能通過“第一材料層成型設備D1與第二材料層成型設備D2兩者其中之一為一依序蒸鍍設備V”以及“依序蒸鍍設備V通過依序蒸鍍的方式分別提供絕緣材料M2與導電材料M3”的技術方案,以形成第一材料層L1與第二材料層L2兩者其中之一層,並且多個第一材料層L1與多個第二材料層L2會交替堆疊在承載基板10上,以形成 一多層式堆疊結構1。 One of the beneficial effects of the present invention is that the manufacturing apparatus of the multilayer stacked structure and the manufacturing method of the film capacitor provided by the present invention can pass the "first material layer forming apparatus D1 and the second material layer forming apparatus D2" One of them is a sequential vapor deposition device V" and a "sequential vapor deposition device V provides the insulating material M2 and the conductive material M3 respectively by sequential evaporation" to form the first material layer L1 and the first One of the two material layers L2, and a plurality of first material layers L1 and a plurality of second material layers L2 are alternately stacked on the carrier substrate 10 to form a multilayer stacked structure 1.
值得注意的是,由於每一個絕緣材料層12的內部混有多個導電顆粒120,所以能夠提升薄膜電容器Z及其多層式堆疊結構1的介電係數或者介電常數。 It is to be noted that since a plurality of conductive particles 120 are mixed inside each of the insulating material layers 12, the dielectric constant or dielectric constant of the film capacitor Z and its multilayer stacked structure 1 can be improved.
以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。 The above disclosure is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, any equivalent technical changes made by using the present specification and the contents of the drawings are included in the application of the present invention. Within the scope of the patent.
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