CN109387681A - Binary channels current sensor structure based on magnetic field detection - Google Patents
Binary channels current sensor structure based on magnetic field detection Download PDFInfo
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- CN109387681A CN109387681A CN201811620680.1A CN201811620680A CN109387681A CN 109387681 A CN109387681 A CN 109387681A CN 201811620680 A CN201811620680 A CN 201811620680A CN 109387681 A CN109387681 A CN 109387681A
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- 238000001514 detection method Methods 0.000 title claims abstract description 22
- 239000004020 conductor Substances 0.000 claims abstract description 57
- 230000002146 bilateral effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
The present invention relates to current sensing techniques field, specially a kind of binary channels current sensor structure based on magnetic field detection can effectively inhibit the magnetic disturbance of adjacency channel, improve detection accuracy；It includes the conductor with U-shaped groove, it is characterized in that, conductor includes two and is arranged symmetrically, it is vertically mapped at topside position in U-shaped groove opening on the inside of one conductor and is provided with a first inside hall device, outside vertical, which is mapped at topside position, is provided with the first outside hall device, it is vertically mapped at topside position in U-shaped groove opening on the inside of another conductor and is provided with a second inside hall device, outside vertical, which is mapped at topside position, is provided with the second outside hall device, first inside hall device to the second inside hall device, the linear distance of second outside hall device is equal, second inside hall device to the first inside hall device, the linear distance of first outside hall device is equal.
Description
Technical field
The present invention relates to current sensing techniques field, specially a kind of binary channels current sensor based on magnetic field detection
Structure.
Background technique
Hall effect defines the relationship in Hall sensor between magnetic field and induced voltage: when electric current is located at by one
When conductor in magnetic field, magnetic field can generate one perpendicular to the active force on electron motion direction to the electronics in conductor,
To generate potential difference on the both direction perpendicular to conductor and the magnetic line of force.Hall device passes through detection changes of magnetic field, transformation
For electric signal output, it can be used for monitoring and measuring various parameters, such as position, displacement, angle, angular speed, revolving speed etc., and can
These variables are subjected to quadratic transformation, can measure pressure, quality, liquid level, flow velocity, flow etc..Hall device output quantity is straight simultaneously
It connects with electronic control unit interface, it can be achieved that automatic detection.
Traditional current detection IC nuclear structure is as shown in Figure 1, electric current I to be measuredTDirection as shown by solid arrows
(also can be reversed, at this time magnetic line of force direction respective opposed) by special-shaped conductor 10, magnetic line of force direction is as the dotted line arrows.It is different
There is U-shaped groove on shape conductor, has the function of enhancing recess region magnetic field strength.The special-shaped conductor is formed by magnetic field such as figure
X is with shown in point, and wherein X indicates that the magnetic line of force enters plane, and point indicates that the magnetic line of force is pierced by plane.Hall device 11 is located on conductor
Side, specific location are as shown in the figure.Electric current (IT) to be measured flows through magnetic field caused by special-shaped conductor and is incuded by hall device 11, from
And complete current detection function；
Various current sense fields are widely used in complete current detecting by detection magnetic field, the electric current designed using the principle
Sensor chip has the advantages such as small in size, easy to use.But in many current detecting applications, current detecting channel is more, from
And generate the demand that current sensor sense channel number is further increased in single chip.And on the other hand, due to each
The electric current in channel can generate corresponding magnetic field, if single current sensor integrates the sense channel of one or more, can send out
Magnetic interference between raw different channels leads to the failure of current detecting to reduce detection accuracy.
Summary of the invention
Interference is generated in order to solve the magnetic field of existing adjacency channel, the low problem of detection accuracy, the present invention provides one kind
Binary channels current sensor structure based on magnetic field detection can effectively inhibit the magnetic disturbance of adjacency channel, improve detection
Precision.
Its technical solution is such that a kind of binary channels current sensor structure based on magnetic field detection comprising band U-shaped
The conductor of groove, which is characterized in that the conductor includes two and is arranged symmetrically, and the U-shaped groove on the inside of a conductor is opened
It is vertically mapped at topside position in mouthful and is provided with the first inside hall device, an outside vertical and is mapped at topside position and sets
It is equipped with the first outside hall device, is vertically mapped at topside position and sets in the U-shaped groove opening on the inside of another described conductor
It is equipped with the second inside hall device, an outside vertical and is mapped at topside position and be provided with the second outside hall device, it is described
The linear distance of first inside hall device to second inside hall device, the second outside hall device is equal, and described
The linear distance of two inside hall devices to first inside hall device, the first outside hall device is equal.
It is further characterized by, the conductor symmetrical structure, first inside hall device, the second inside Hall device
Part is located at the U-shaped groove center of gravity of the conductor and is on the line of symmetry of the conductor itself；
First outside hall device and/or second outside hall device include with the balanced pair of the conductor itself
Claim two of arrangement；
It is arc surface at the conductor on the outside of U-shaped groove；
The conductor is to include U-shaped portion and the special-shaped conductor of bilateral symmetry arbitrary polygon that two sides are arranged symmetrically.
Axial symmetry placement can be presented in described two special-shaped conductors, and central symmetry placement can also be presented.
After adopting the structure of the invention, the electric current on two conductors generates magnetic field respectively, detects magnetic by hall device
Field intensity calculates, and enhances magnetic field signal to be measured, improves signal-to-noise ratio, has effectively eliminated the magnetic interference of two conductors generation,
Improve detection accuracy.
Detailed description of the invention
Fig. 1 is prior art schematic diagram；
Fig. 2 is that a conductor passes through the Distribution of Magnetic Field figure generated after electric current in embodiment one；
Fig. 3 is that another conductor passes through the Distribution of Magnetic Field figure generated after electric current in embodiment one；
Fig. 4 is conductor and hall device structural schematic diagram in embodiment two；
Fig. 5 is three conductor of embodiment and hall device structural schematic diagram；
Fig. 6 is conductor and hall device structural schematic diagram in example IV.
Specific embodiment
Embodiment one: being shown in Fig. 2, shown in Fig. 3, a kind of binary channels current sensor structure based on magnetic field detection comprising
Two conductors 20 and 24 being arranged symmetrically, conductor 20 and 24 itself are symmetrical structure, the U-shaped groove opening of 20 inside of conductor
Interior be vertically mapped at topside position is provided with the first inside hall device 21, an outside vertical and is mapped at topside position and sets
First outside hall device 22 and 23 there are two setting, itself line of symmetry is symmetrical with conductor 20 for the first outside hall device 22 and 23
Arrangement, interior be vertically mapped at topside position of the U-shaped groove opening of another 24 inside of conductor are provided with one second inside suddenly
That device 25, outside vertical are mapped at topside position the second outside hall device 26 and 27 there are two settings, and the first inside is suddenly
The linear distance of your 21 to two the second outside hall devices 26 and 27 of device is equal, the second inside hall device 25 to two the
The linear distance of one outside hall device 22 and 23 is equal, passes through electric current I to be measured in two conductors 20 and 24 respectivelyT, electricity to be measured
Stream direction can be positive and negative any direction.
Due to two electric current ITFlowing separately through magnetic field caused by two conductors 20 and 24 can be mutually superimposed, here first
Electric current I is describedTThe case where flowing through special-shaped conductor 20.Electric current I to be measuredTDirection as shown by solid arrows (also can be reversed, at this time magnetic
Line of force direction respective opposed) by conductor 20, magnetic line of force direction is as the dotted line arrows.There is U-shaped groove on conductor 20, has and increase
The effect of strong recess region magnetic field strength.The conductor 20 is formed by magnetic field as shown in X in figure and point, and wherein X indicates the magnetic line of force
Into plane, point indicates that the magnetic line of force is pierced by plane.First inside hall device 21, which is located in U-shaped groove opening, to be vertically mapped to
At layer position, two the first outside hall devices 22 and 23 are located at U-shaped groove open outer side and are vertically mapped at topside position, tool
Body position is as shown, the first inside hall device 21 magnetic field strength maximum, the first magnetic field strength of outside hall device 22 and 23
It is smaller, and by electric current I to be measuredTCaused magnetic direction is opposite at 21 position of the first inside hall device；First inside is suddenly
Your linear distance of device 21, the first outside hall device 22 and the 23 to the second inside hall device 25 is equal, while in second
The linear distance of side hall device 25, the second outside hall device 26 and the 27 to the first inside hall device 21 is equal.
In Fig. 2, useful magnetic field signal to be measured can regard difference mode signal, electric current I to be measured asTLead to the first inside Hall device
The magnetic field strength H that part 21, the first outside hall device 22 and 23 incudeTa、HTb、HTcIt indicates.Simultaneously in Fig. 3, another channel
Electric current is equal to the first inside of hall device hall device 21, the interference magnetic field strength of the first outside hall device 22 and 23, because
There is unified direction for magnetic field of the interference source at the first inside hall device 21, the first position of outside hall device 22 and 23,
So induced magnetic field caused by another channel current can regard common mode letter as to the effect of the first inner side and outer side hall device
Number, the magnetic field strength H that another channel current causes hall device to incudeNa、HNb、HNcIt indicates.
The total magnetic intensity (electric current to be measured and interference magnetic field) of three hall devices in same channel respectively using Ha, Hb,
Hc is indicated, then magnetic field strength Y to be processed is calculated by formula:
Y=2*Ha - Hb- Hc
=2*(HTa+HNa) - (HTb +HNb)- (HTc + HNc)
= (2*HTa - HTb - HTc)+ (2*HNa-HNb -HNC)
= YT + YN (YTWith YNRespectively IT、INInfluence to hall device)
Wherein:
YT=2*HTa - HTb - HTc (1)
YN=2*HNa-HNb -HNC (2)
Due to HNa、HNb、HNcIt is approximately equal, so according to formula (2), YNIt is approximately zero.To effectively eliminate another channel
Interference of the induced magnetic field caused by electric current to be measured for current field signal to be measured.
On the other hand, according to formula (1), the magnetic field strength H incuded by the first outside hall device 22,23Tb、HTc
The magnetic field strength H incuded with the first inside hall device 21TaIt is contrary, so YTAbsolute value be greater than HTaAbsolute value,
To effectively enhance magnetic field signal to be measured, signal-to-noise ratio is also just improved.
At the center for the U-shaped groove that first inside hall device 21, the second inside hall device 25 should all be placed on conductor,
And on the line of symmetry of itself in conductor.
As shown in Figure 4, conductor 20,24 can use schematic structure, and the shape of induced magnetic field is approximately round；Certainly
Other structures can also be used, as long as the magnetic field generated meets condition.Assuming that two hall devices in each channel are felt
The electric current induced magnetic field intensity to be measured answered is HTa、HTb, interference magnetic field strength is HNa、HNb, then magnetic field strength Y to be processed are as follows:
Y=HTA-HTB+HNA-HNB
Due to another channel interference magnetic field strength on hall device position direction it is identical, it is equal in magnitude.Pass through algorithm above
The interference in another channel can be removed.
As shown in Figure 6, two special-shaped conductors can be slanting central symmetry and place, and still should ensure that the first inside at this time suddenly
Your device 21 is distinguished equal relationship with the linear distance of the second inner and outer hall device 25,26,27 and is set up.It is above-mentioned at this time
Algorithm relationship is still set up, and the interference in another channel can be equally removed.
Claims (5)
1. a kind of binary channels current sensor structure based on magnetic field detection comprising the conductor with U-shaped groove, feature exist
In the conductor includes two and is arranged symmetrically, and is vertically mapped to upper layer position in the U-shaped groove opening on the inside of a conductor
The place of setting, which is provided with the first inside hall device, an outside vertical and is mapped at topside position, is provided with the first outside Hall device
Part is vertically mapped at topside position in the U-shaped groove opening on the inside of another described conductor and is provided with one second inside suddenly
That device, outside vertical are mapped at topside position and are provided with the second outside hall device, and first inside hall device arrives
Second inside hall device, the linear distance of the second outside hall device are equal, second inside hall device to institute
It is equal to state the first inside hall device, the linear distance of the first outside hall device.
2. a kind of binary channels current sensor structure based on magnetic field detection according to claim 1, which is characterized in that institute
Conductor symmetrical structure is stated, first inside hall device, the second inside hall device are located at the U-shaped groove center of the conductor
Place and in the conductor itself line of symmetry on.
3. a kind of binary channels current sensor structure based on magnetic field detection according to claim 2, which is characterized in that institute
It states the first outside hall device and/or second outside hall device includes being arranged symmetrically with the line of symmetry of the conductor itself
Two.
4. a kind of binary channels current sensor structure based on magnetic field detection according to claim 1, which is characterized in that U
It is arc surface at the conductor on the outside of connected in star.
5. a kind of binary channels current sensor structure based on magnetic field detection according to claim 4, which is characterized in that institute
It states conductor and is and include U-shaped portion and the special-shaped conductor of bilateral symmetry polygon that two sides are arranged symmetrically.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811620680.1A CN109387681A (en) | 2018-12-28 | 2018-12-28 | Binary channels current sensor structure based on magnetic field detection |
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Effective date of registration: 20221215 Address after: No. 295, Building 17, No. 2723, Fuchunwan Avenue, Chunjiang Street, Fuyang District, Hangzhou, Zhejiang, 310000 Applicant after: Hangzhou Sitai Microelectronics Co.,Ltd. Address before: 214028 No.16 Changjiang Road, Xinwu District, Wuxi City, Jiangsu Province Applicant before: STEADICHIPS Inc. |