CN109378351A - 一种hit双面双玻光伏组件 - Google Patents

一种hit双面双玻光伏组件 Download PDF

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CN109378351A
CN109378351A CN201811248574.5A CN201811248574A CN109378351A CN 109378351 A CN109378351 A CN 109378351A CN 201811248574 A CN201811248574 A CN 201811248574A CN 109378351 A CN109378351 A CN 109378351A
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encapsulating material
glass
battery
hit
laminated
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惠祺
季军义
顾海峰
顾丽萍
常宇峰
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Jiangsu Rainbow Wing New Energy Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

本发明提供了一种HIT双面发电光伏组件,包括前玻璃、第一封装材料、双面HIT电池、第二封装材料、后玻璃和接线盒,所述前玻璃、第一封装材料、双面HIT电池、第二封装材料和后玻璃从上至下依次分布,所述接线盒安装于后玻璃边缘位置处。本发明增加了电池的吸光率,实现了组件正反两面的高功率输出;具体为:发电量提升;可靠性高;寿命长。

Description

一种HIT双面双玻光伏组件
技术领域
本发明涉及晶硅太阳能电池组件制造技术领域,特别涉及一种 HIT双面双玻光伏组件。
背景技术
太阳能行业作为一种低碳可再生能源,正在世界范围内蓬勃发展,各国安装量逐年增长。目前在地面和各种类型屋顶上安装光伏系统的案例已非常多。对于各类型建筑,安装具有发电功能的光伏产品可以降低建筑用电能耗,达到节能减排的效果,同时也为建筑业主和系统安装使用人带来经济效益,因此非常具有推广价值。
目前使用的HIT结构的硅太阳能电池,所谓HIT(Heterojunction with intrinsicThinlayer)结构就是在P型氢化非晶硅和n型氢化非晶硅与n型硅衬底之间增加一层非掺杂(本征)氢化非晶硅薄膜,采取该工艺措施后,改变了PN结的性能。因而使转换效率达到20%,开路电压达到719 mV,并且全部工艺可以在200℃以下实现。
HIT太阳能电池按单位面积计算的发电量保持着世界领先水准。HIT具有制备工艺温度低、转换效率高、高温特性好等特点,是一种低价高效电池。HIT的转化效率越高,意味着它更加具有可与传统的硅晶太阳能电池相匹敌的优势。
现有太阳光伏产品采用硅晶电池,该种电池需要使用大量的硅晶圆,成本极高,由于硅晶圆的合成需要大量的能源,不够环保;本发明公开了一种HIT双面发电光伏组件,提高了双玻光伏组件的功率。光伏组件从上至下依次由第一玻璃盖板、EVA、太阳能电池片、EVA以及第二玻璃盖板5层结构组成,HIT电池片转换效率大于传统电池片的20%;效率温度系数较低(<0.3%/℃),此类电池片在高温环境下工作更有效率;相对于传统晶硅电池,HIT太阳能光伏电池相对更加环保;可实现薄型化,所以使用少量的硅即可。制作硅晶圆等时实际上需要相当大的能源,因此薄型也是一个重要因素。由此看来,如果追求更加环保的方式,HIT太阳能光伏电池是最佳选择。HIT太阳能光伏电池单元实现超薄对公司来说,还具有降低制造成本的效果。从成本来看,在HIT太阳能光伏电池等结晶硅型太阳能电池单元中,硅晶圆在总成本中所占的比例非常大,减薄其厚度是降低成本的重点。
发明内容
为了克服现有技术中成本高、不环保的缺陷,本发明提供一种HIT双面发电光伏组件。
为了实现上述目的,本发明提供以下技术方案:
一种HIT双面发电光伏组件,包括前玻璃、第一封装材料、双面HIT电池、第二封装材料、后玻璃和接线盒,所述前玻璃、第一封装材料、双面HIT电池、第二封装材料和后玻璃从上至下依次分布,所述接线盒安装于后玻璃边缘位置处。
优选的,所述前玻璃和后玻璃由透光率94%以上的超白压花高透钢化玻璃制成,所述超白压花高透钢化玻璃的厚度为1.8~3.2mm。
优选的,所述第一封装材料层和第二封装材料层的材料为POE。
一种HIT双面发电光伏组件的加工方法,包括以下加工步骤:
1)焊接:将电池片焊接成为电池串;
2)层叠:按前玻璃、第一封装材料、双面HIT电池、第二封装材料、后玻璃的顺序层叠;
3)封边:在层叠好的组件四周用封边胶带封起来;
4)层压:放入层压机进行层压,层压过程分为三段进行;
5)装接线盒:层压结束等组件冷却后把组件四周的封边胶带撕掉,引线处装接线盒;
6)包装入库:检测结束后进行包装入库。
优选的,所述步骤1)中一个电池串由是个电池片组成,相邻两个电池片之间的距离为2.2~2.4mm,焊接温度为330℃~350℃。
优选的,所述步骤2)中层叠具体过程为:
①将前玻璃放置在层叠台上,玻璃绒面朝上;
②取第一封装材料层绒面向上平铺在前玻璃上,居中铺放;
③放置层叠模板,层叠模板三边对齐前玻璃三边,按照模板上极性标识摆放电池串,共摆放六串,电池串间距为2±0.5mm;
④采用高温胶带固定电池串,胶带长度25mm±5mm,胶带长边与主栅线垂直,以缝为中心居中粘贴;
⑤摆放汇流条,先焊中间短汇流条,再焊外侧长汇流条,汇流条摆放到位,焊汇流条时间≥2S,烙铁温度为380±10℃,焊接完成建后取掉模板;
⑥在电池片上粘贴条形码;
⑦放置第二封装材料和后玻璃,并在后玻璃上粘贴条形码;
⑧组件四个角以及引线处加垫POE小方块,用来防止层压之后产出气泡。
优选的,所述步骤③中电池串上电池栅线面为负极,铝背场面为正极。
优选的,所述步骤4)中层压温度为140~150℃,抽真空时间为650~700s,其中三段层压过程的压力与时间分别为:层压一段时间/压力:90S/-60kpa,层压二段时间/压力:90S/-50kpa,层压三段时间/压力:720S/-20kpa。
本发明所带来的有益效果是:增加了电池的吸光率,实现了组件正反两面的高功率输出;具体为:
①发电量提升:背面额外发电后,发电量较单面发电组件增益10%~30%;
②可靠性高:抗PID 且防火,双层玻璃结构能够增强运送中抗隐裂能力,零透水率,较传统背板具有抗UV 老化和抗降解腐蚀的特征;
③寿命长:和单面双玻组件一样质保在30 年,普通组件在20 年。
附图说明
图1是本发明整体结构示意图。
图2是本发明电池片的排列方式。
图3是图2中A处的结构放大示意图。
图中标号:
1、前玻璃;2、第一封装材料;3、双面HIT电池;4、第二封装材料层;5、后玻璃;6、接线盒。
具体实施方式
下面结合附图对本发明的较佳实施例进行详细阐述,以使本发明的优点和特征能更易于被本领域技术人员理解,从而对本发明的保护范围做出更为清楚明确的界定。
如图1-3所示,一种HIT双面发电光伏组件,包括前玻璃1、第一封装材料2、双面HIT电池3、第二封装材料4、后玻璃5和接线盒6,所述前玻璃1、第一封装材料2、双面HIT电池3、第二封装材料4和后玻璃5从上至下依次分布,所述接线盒6安装于后玻璃5边缘位置处,采用边缘安装方式的接线盒6,实现组件背面无遮挡,不影响背面电池发电。
所述前玻璃1和后玻璃5由透光率94%以上的超白压花高透钢化玻璃制成,所述超白压花高透钢化玻璃的厚度为1.8~3.2mm。
所述第一封装材料层2和第二封装材料层4的材料为POE。
一种HIT双面发电光伏组件的加工方法,包括以下加工步骤:
1)焊接:将电池片焊接成为电池串;
2)层叠:按前玻璃1、第一封装材料2、双面HIT电池3、第二封装材料4、后玻璃5的顺序层叠;
3)封边:在层叠好的组件四周用封边胶带封起来;
4)层压:放入层压机进行层压,层压过程分为三段进行;
5)装接线盒:层压结束等组件冷却后把组件四周的封边胶带撕掉,引线处装接线盒;
6)包装入库:检测结束后进行包装入库。
所述步骤1)中一个电池串由是个电池片组成,相邻两个电池片之间的距离为2.2~2.4mm,焊接温度为330℃~350℃。
所述步骤2)中层叠具体过程为:
①将前玻璃1放置在层叠台上,玻璃绒面朝上;
②取第一封装材料层2绒面向上平铺在前玻璃1上,居中铺放;
③放置层叠模板,层叠模板三边对齐前玻璃1三边,按照模板上极性标识摆放电池串,共摆放六串,电池串间距为2±0.5mm;
④采用高温胶带固定电池串,胶带长度25mm±5mm,胶带长边与主栅线垂直,以缝为中心居中粘贴,不允许出现胶带偏向一边电池片,胶带需抹平,不能有折皱、气泡、翘起的现象;
⑤摆放汇流条,先焊中间短汇流条,再焊外侧长汇流条,汇流条摆放到位,焊汇流条时间≥2S,烙铁温度为380±10℃,焊接完成建后取掉模板;
⑥在电池片上粘贴条形码,如图3所示,条形码贴在电池片边缘处;
⑦放置第二封装材料4和后玻璃5,并在后玻璃5上粘贴条形码;
⑧组件四个角以及引线处加垫POE小方块,用来防止层压之后产出气泡。
所述步骤③中电池串上电池栅线面为负极,铝背场面为正极。
所述步骤4)中层压温度为140~150℃,抽真空时间为650~700s,其中三段层压过程的压力与时间分别为:层压一段时间/压力:90S/-60kpa,层压二段时间/压力:90S/-50kpa,层压三段时间/压力:720S/-20kpa。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本领域的技术人员在本发明所揭露的技术范围内,可不经过创造性劳动想到的变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应该以权利要求书所限定的保护范围为准。

Claims (8)

1.一种HIT双面发电光伏组件,其特征在于,包括前玻璃(1)、第一封装材料(2)、双面HIT电池(3)、第二封装材料(4)、后玻璃(5)和接线盒(6),所述前玻璃(1)、第一封装材料(2)、双面HIT电池(3)、第二封装材料(4)和后玻璃(5)从上至下依次分布,所述接线盒(6)安装于后玻璃(5)边缘位置处。
2.根据权利要求1所述的一种HIT双面发电光伏组件,其特征在于,所述前玻璃(1)和后玻璃(5)由透光率94%以上的超白压花高透钢化玻璃制成,所述超白压花高透钢化玻璃的厚度为1.8~3.2mm。
3.根据权利要求1或2所述的一种HIT双面发电光伏组件,其特征在于,所述第一封装材料层(2)和第二封装材料层(4)的材料为POE。
4.一种HIT双面发电光伏组件的加工方法,其特征在于,包括以下加工步骤:
1)焊接:将电池片焊接成为电池串;
2)层叠:按前玻璃(1)、第一封装材料(2)、双面HIT电池(3)、第二封装材料(4)、后玻璃(5)的顺序层叠;
3)封边:在层叠好的组件四周用封边胶带封起来;
4)层压:放入层压机进行层压,层压过程分为三段进行;
5)装接线盒:层压结束等组件冷却后把组件四周的封边胶带撕掉,引线处装接线盒;
6)包装入库:检测结束后进行包装入库。
5.根据权利要求4所述的一种HIT双面发电光伏组件的加工方法,其特征在于,所述步骤1)中一个电池串由是个电池片组成,相邻两个电池片之间的距离为2.2~2.4mm,焊接温度为330℃~350℃。
6.根据权利要求4所述的一种HIT双面发电光伏组件的加工方法,其特征在于,所述步骤2)中层叠具体过程为:
①将前玻璃(1)放置在层叠台上,玻璃绒面朝上;
②取第一封装材料层(2)绒面向上平铺在前玻璃(1)上,居中铺放;
③放置层叠模板,层叠模板三边对齐前玻璃(1)三边,按照模板上极性标识摆放电池串,共摆放六串,电池串间距为2±0.5mm;
④采用高温胶带固定电池串,胶带长度25mm±5mm,胶带长边与主栅线垂直,以缝为中心居中粘贴;
⑤摆放汇流条,先焊中间短汇流条,再焊外侧长汇流条,汇流条摆放到位,焊汇流条时间≥2S,烙铁温度为380±10℃,焊接完成建后取掉模板;
⑥在电池片上粘贴条形码;
⑦放置第二封装材料(4)和后玻璃(5),并在后玻璃(5)上粘贴条形码;
⑧组件四个角以及引线处加垫POE小方块,用来防止层压之后产出气泡。
7.根据权利要求6所述的一种HIT双面发电光伏组件的加工方法,其特征在于,所述步骤③中电池串上电池栅线面为负极,铝背场面为正极。
8.根据权利要求4所述的一种HIT双面发电光伏组件的加工方法,其特征在于,所述步骤4)中层压温度为140~150℃,抽真空时间为650~700s,其中三段层压过程的压力与时间分别为:层压一段时间/压力:90S/-60kpa,层压二段时间/压力:90S/-50kpa,层压三段时间/压力:720S/-20kpa。
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