CN109361046A - Substrate integrates bimodulus air resonance chamber feedback oscillator - Google Patents
Substrate integrates bimodulus air resonance chamber feedback oscillator Download PDFInfo
- Publication number
- CN109361046A CN109361046A CN201811208298.XA CN201811208298A CN109361046A CN 109361046 A CN109361046 A CN 109361046A CN 201811208298 A CN201811208298 A CN 201811208298A CN 109361046 A CN109361046 A CN 109361046A
- Authority
- CN
- China
- Prior art keywords
- substrate
- resonance chamber
- integrates
- air resonance
- bimodulus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/082—Microstripline resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/06—Cavity resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/084—Triplate line resonators
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
The invention discloses a kind of substrates to integrate bimodulus air resonance chamber feedback oscillator, bimodulus air resonance chamber is integrated including substrate, the signal transmission port that substrate integrates bimodulus air resonance chamber connects the input terminal of amplifier by inputting matching with biasing circuit, the output end of amplifier connects the input terminal of power splitter by exporting matching with biasing circuit, the output end connection substrate of power splitter integrates another signal transmission port of bimodulus air resonance chamber, and the another output of power splitter connects microstrip line.The present invention effectively reduces phase noise relative to traditional substrate integration wave-guide resonator.The present invention only can be realized by common PCB technology, and structure is simple, easy to process.In addition, the substrate used in the present invention integrates bimodulus air resonance chamber quality factor height relative to traditional microstrip structure, it is lost small.
Description
Technical field
The present invention relates to microwave device fields, integrate bimodulus air resonance chamber feedback type oscillating more particularly to a kind of substrate
Device.
Background technique
Oscillator with the high speed development of modern wireless communication systems and ripe day by day, as its important component
Cause extensive concern and research.Phase noise is one of index mostly important in oscillator design.In feedback type oscillating
In device topological structure, passive resonator is the Primary Component for influencing oscillator phase index.Traditional passive resonator is such as
Dielectric resonator has very high quality factor, but dielectric resonator has biggish size, is not easy Planar integration, by environment
The problems such as factor is affected is not suitable for the design of miniaturization with planar circuit.Micro-strip resonantor is in feedback oscillator
Most commonly seen a kind of resonator element, the resonator design structure is simple, and is easy to Planar integration, is relatively specific for designing low
Frequency pierce circuit.However, the reduction of the sensibility and quality factor of micro-strip processing leads to it with the raising of design frequency
Good performance is difficult to realize in higher microwave and millimeter wave frequency band.Therefore, it is necessary to select suitable resonator to design
Feedback oscillator with superperformance.
Summary of the invention
Goal of the invention: the object of the present invention is to provide a kind of substrates to integrate bimodulus air resonance chamber feedback oscillator, fits
For high-frequency circuit, low phase noise can be realized.
Technical solution: to reach this purpose, the invention adopts the following technical scheme:
Substrate of the present invention integrates bimodulus air resonance chamber feedback oscillator, including to integrate bimodulus air humorous for substrate
Shake chamber, and the signal transmission port that substrate integrates bimodulus air resonance chamber connects amplifier with biasing circuit by input matching
Input terminal, the output end of amplifier connects the input terminal of power splitter by exporting matching with biasing circuit, one of power splitter
Output end connects another signal transmission port that substrate integrates bimodulus air resonance chamber, the another output connection of power splitter
Microstrip line.
Further, it includes positioned at the top layer medium substrate of top layer, positioned at middle layer that substrate, which integrates bimodulus air resonance chamber,
Interlayer substrate and underlying dielectric substrate positioned at bottom, top layer medium substrate, interlayer substrate and underlying dielectric
The respective upper and lower surface of substrate is equipped with metal layer;Interlayer substrate portion is emptied, formation air chamber, around air chamber
Equipped with plated-through hole, plated-through hole runs through the metal layer of interlayer substrate upper and lower surface, and air chamber includes a square
Use grading structure between the part that shape chamber, air chamber and interlayer substrate are not emptied, grading structure and rectangular cavity it
Between use inductive coupled window construction.Interlayer substrate uses the air cavity configuration for emptying certain media, reduces medium
Loss, improves quality factor.
Further, the shape of the grading structure is triangle.
Further, the substrate integrate bimodulus air resonance chamber a signal transmission port by fluting grading structure with
Input microstrip line be connected, substrate integrate bimodulus air resonance chamber another signal transmission port by fluting grading structure with it is defeated
Microstrip line is connected out.
Further, the characteristic impedance of the input microstrip line and output microstrip line is 50 ohm.
Further, the characteristic impedance of the microstrip line is 50 ohm.
Further, the substrate integrates the operating mode that bimodulus air resonance chamber uses higher mode.One may be implemented in this way
The filter freguency response of a second order, while transmission zero can be introduced in the attachment close to passband, improve group delay.
The utility model has the advantages that the invention discloses a kind of substrates to integrate bimodulus air resonance chamber feedback oscillator, relative to biography
The substrate integration wave-guide resonator of system effectively reduces phase noise.The present invention only can be realized by common PCB technology,
Structure is simple, easy to process.In addition, it is humorous that the substrate used in the present invention integrates bimodulus air relative to traditional microstrip structure
Chamber quality factor of shaking are high, are lost small.
Detailed description of the invention
Fig. 1 is the topology knot that substrate integrates bimodulus air resonance chamber feedback oscillator in the specific embodiment of the invention
Structure;
Fig. 2 is the tomograph that substrate integrates bimodulus air resonance chamber in the specific embodiment of the invention;
Fig. 3 is the frequency response curve that substrate integrates bimodulus air resonance chamber in the specific embodiment of the invention;
Fig. 4 is that the middle layer that substrate integrates bimodulus air surge chamber feedback oscillator in the specific embodiment of the invention is situated between
The planar structure of matter substrate;
Fig. 5 is the spectral response that substrate integrates bimodulus air resonance chamber feedback oscillator in the specific embodiment of the invention
Curve;
Fig. 6 is the phase noise that substrate integrates bimodulus air resonance chamber feedback oscillator in the specific embodiment of the invention
Curve.
Specific embodiment
Technical solution of the present invention is further introduced with attached drawing With reference to embodiment.
Present embodiment discloses a kind of integrated bimodulus air resonance chamber feedback oscillator of substrate, as shown in Figure 1,
Bimodulus air resonance chamber 4 is integrated including substrate, the signal transmission port that substrate integrates bimodulus air resonance chamber 4 passes through input
Matching and biasing circuit 1 connect the input terminal of amplifier 2, and the output end of amplifier 2 is connected by output matching and biasing circuit 3
The input terminal of power splitter 5, another signal that the output end connection substrate of power splitter 5 integrates bimodulus air resonance chamber 4 pass
The another output of defeated port, power splitter 5 connects microstrip line 6.Bimodulus air resonance chamber 4, input matching are integrated by substrate
A negative feedback loop is formed with biasing circuit 1, amplifier 2, output matching and biasing circuit 3 and power splitter 5, generation is freely shaken
The signal swung, last signal are exported by microstrip line 6.The characteristic impedance of microstrip line 6 is 50 ohm.Entirely the size of oscillator is
60mm*63mm。
As shown in Figure 2 and Figure 4, it includes the top layer medium substrate 7 for being located at top layer, position that substrate, which integrates bimodulus air resonance chamber 4,
Interlayer substrate 8 in middle layer and the underlying dielectric substrate 9 positioned at bottom, top layer medium substrate 7, interlayer base
Plate 8 and the respective upper and lower surface of underlying dielectric substrate 9 are equipped with metal layer;8 part of interlayer substrate is emptied, and is formed empty
Air cavity, plated-through hole 16 is equipped with around air chamber, and plated-through hole 16 runs through the metal of 8 upper and lower surface of interlayer substrate
Layer, air chamber include a rectangular cavity 15, use triangle between the part that air chamber and interlayer substrate 8 are not emptied
Grading structure 13, between grading structure 13 and rectangular cavity 15 use inductive coupled window construction 14.It is humorous that substrate integrates bimodulus air
One signal transmission port of vibration chamber 4 is connected by fluting grading structure 121 with input microstrip line 10, and substrate integrates bimodulus air
Another signal transmission port of resonant cavity 4 is connected by fluting grading structure 122 with output microstrip line 11.Input microstrip line 10
Characteristic impedance with output microstrip line 11 is 50 ohm.Top layer medium substrate 7, interlayer substrate 8 and underlying dielectric base
The relative dielectric constant of plate 9 is 2.2, and dielectric thickness is 0.254mm.Top layer medium substrate 7 and underlying dielectric substrate 9 it is upper
Lower surface is equipped with metal layer, be in order to be pressed in 8 two sides of interlayer substrate partially emptied and realize closed structure, and
And there are good electrical characteristics.Substrate integrate bimodulus air resonance chamber 4 using higher mode operating mode, i.e., TE102 mode and
TE201 mode.
Fig. 3 is the frequency response curve that substrate integrates bimodulus air resonance chamber 4 in present embodiment, centre frequency
For 19.8GHz, bandwidth 150MHz, leads to in-band insertion loss and be better than 2.7dB, return loss is better than 18dB in passband.Fig. 5 is this
Substrate integrates the spectral response curve of bimodulus air resonance chamber feedback oscillator, present embodiment in specific embodiment
Middle resonance fundamental frequency is 19.8GHz, output power 4.5dBm;The frequency of second harmonic be 39.6GHz, output power be-
32.1dBm.Fig. 6 is the phase noise that substrate integrates bimodulus air resonance chamber feedback oscillator in the specific embodiment of the invention
Curve, deviateing the phase noise at 100kHz is -122.0dBc/Hz, and deviateing the phase noise at 1MHz is -141.5dBc/Hz.
Claims (7)
1. substrate integrates bimodulus air resonance chamber feedback oscillator, it is characterised in that: integrate bimodulus air resonance including substrate
Chamber (4), the signal transmission port that substrate integrates bimodulus air resonance chamber (4) are matched with biasing circuit (1) even by input
The input terminal of amplifier (2) is connect, the output end of amplifier (2) connects power splitter (5) by output matching and biasing circuit (3)
Input terminal, the output end connection substrate of power splitter (5) integrate another signal transmission end of bimodulus air resonance chamber (4)
Mouthful, the another output of power splitter (5) connects microstrip line (6).
2. substrate according to claim 1 integrates bimodulus air resonance chamber feedback oscillator, it is characterised in that: the base
It includes top layer medium substrate (7), the interlayer base positioned at middle layer positioned at top layer that piece, which integrates bimodulus air resonance chamber (4),
Plate (8) and underlying dielectric substrate (9) positioned at bottom, top layer medium substrate (7), interlayer substrate (8) and underlying dielectric
Substrate (9) respective upper and lower surface is equipped with metal layer;Interlayer substrate (8) is partially emptied, and air chamber, air are formed
Plated-through hole (16) are equipped with around chamber, plated-through hole (16) runs through the metal layer of interlayer substrate (8) upper and lower surface,
Air chamber includes a rectangular cavity (15), uses gradual change between the part that air chamber and interlayer substrate (8) are not emptied
Structure (13) uses inductive coupled window construction (14) between grading structure (13) and rectangular cavity (15).
3. substrate according to claim 2 integrates bimodulus air resonance chamber feedback oscillator, it is characterised in that: it is described gradually
The shape of structure changes (13) is triangle.
4. substrate according to claim 2 integrates bimodulus air resonance chamber feedback oscillator, it is characterised in that: the base
The signal transmission port that piece integrates bimodulus air resonance chamber (4) passes through fluting grading structure (121) and input microstrip line
(10) be connected, substrate integrate bimodulus air resonance chamber (4) another signal transmission port by fluting grading structure (122) with
Microstrip line (11) are exported to be connected.
5. substrate according to claim 4 integrates bimodulus air resonance chamber feedback oscillator, it is characterised in that: described defeated
Entering microstrip line (10) and exporting the characteristic impedance of microstrip line (11) is 50 ohm.
6. substrate according to claim 1 integrates bimodulus air resonance chamber feedback oscillator, it is characterised in that: described micro-
Characteristic impedance with line (6) is 50 ohm.
7. substrate according to claim 1 integrates bimodulus air resonance chamber feedback oscillator, it is characterised in that: the base
Piece integrates the operating mode that bimodulus air resonance chamber (4) uses higher mode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811208298.XA CN109361046A (en) | 2018-10-17 | 2018-10-17 | Substrate integrates bimodulus air resonance chamber feedback oscillator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811208298.XA CN109361046A (en) | 2018-10-17 | 2018-10-17 | Substrate integrates bimodulus air resonance chamber feedback oscillator |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109361046A true CN109361046A (en) | 2019-02-19 |
Family
ID=65349564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811208298.XA Pending CN109361046A (en) | 2018-10-17 | 2018-10-17 | Substrate integrates bimodulus air resonance chamber feedback oscillator |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109361046A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4020798A1 (en) * | 2020-12-23 | 2022-06-29 | Carrier Corporation | Oscillator circuit comprising surface integrated waveguide resonator |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130082793A1 (en) * | 2011-09-30 | 2013-04-04 | Adam B. Eldredge | Mutual Inductance Circuits |
CN104092012A (en) * | 2014-07-16 | 2014-10-08 | 江苏中兴微通信息科技有限公司 | Q-band superspeed wireless local area network indoor access antenna |
CN104425860A (en) * | 2013-09-06 | 2015-03-18 | 南京理工大学 | Substrate integrated waveguide bandpass filter with wide stop-band characteristic |
CN107910629A (en) * | 2017-11-02 | 2018-04-13 | 东南大学 | A kind of low phase noise substrate integration wave-guide oscillator |
-
2018
- 2018-10-17 CN CN201811208298.XA patent/CN109361046A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130082793A1 (en) * | 2011-09-30 | 2013-04-04 | Adam B. Eldredge | Mutual Inductance Circuits |
CN104425860A (en) * | 2013-09-06 | 2015-03-18 | 南京理工大学 | Substrate integrated waveguide bandpass filter with wide stop-band characteristic |
CN104092012A (en) * | 2014-07-16 | 2014-10-08 | 江苏中兴微通信息科技有限公司 | Q-band superspeed wireless local area network indoor access antenna |
CN107910629A (en) * | 2017-11-02 | 2018-04-13 | 东南大学 | A kind of low phase noise substrate integration wave-guide oscillator |
Non-Patent Citations (2)
Title |
---|
HÉCTOR ESTEBAN ET AL: ""Improved low reflection transition from microstrip line to empty substrate integrated waveguide"", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》 * |
谭朕等: ""一种新型基片集成波导滤波器及其在振荡器中的应用"", 《固体电子学研究与进展》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4020798A1 (en) * | 2020-12-23 | 2022-06-29 | Carrier Corporation | Oscillator circuit comprising surface integrated waveguide resonator |
US11641178B2 (en) | 2020-12-23 | 2023-05-02 | Carrier Corporation | Oscillator circuit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106410336B (en) | A kind of three rank substrate integral wave guide filter of stack | |
US11158924B2 (en) | LTCC wide stopband filtering balun based on discriminating coupling | |
CN111816964B (en) | Millimeter wave suspension strip line composite filter | |
CN109462000A (en) | A kind of three rank model filters power splitter of multi layer substrate integrated waveguide | |
US9196941B2 (en) | Cross-coupled bandpass filter | |
CN107910629A (en) | A kind of low phase noise substrate integration wave-guide oscillator | |
CN113949360A (en) | High-performance miniaturized IPD band-pass filter | |
CN110459843A (en) | A kind of dielectric waveguide filter | |
CN203218415U (en) | Wide stopband LTCC band-pass filter based on magnetoelectric coupling canceling technology | |
WO2023019909A1 (en) | Harmonic suppression circuit, power amplifier module, communication device, and communication system | |
CN108493533A (en) | It is a kind of that there is the tunable filter for stablizing Wide stop bands | |
CN110247143B (en) | Microstrip band-pass filter with switchable and tunable functions | |
CN109361046A (en) | Substrate integrates bimodulus air resonance chamber feedback oscillator | |
CN109494433A (en) | A kind of efficient low-pass filter based on artificial surface phasmon and co-planar waveguide | |
CN107634293B (en) | There are two the Mini Microstrip low-pass filters of transmission zero for a kind of tool | |
CN107946710A (en) | Ultra-compact double-frequency bandpass filtering device based on RQMSIW | |
CN105098304B (en) | Filter and forming method thereof | |
CN114122652B (en) | Zero-point controllable band-pass filter based on IPD technology | |
CN212434808U (en) | Filter structure and filter | |
KR100852487B1 (en) | Dielectric duplexer | |
TWI735204B (en) | Structured hybrid hetero-wavelength resonant ceramic filter | |
CN108493534A (en) | A kind of four mould chip integrated waveguide broad-band filters | |
CN209709142U (en) | It is a kind of with changeable and tunable microstrip bandpass filter | |
CN205911401U (en) | Compact microstrip filter | |
US7990236B2 (en) | Low-pass filter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190219 |
|
RJ01 | Rejection of invention patent application after publication |