CN109360798A - A kind of integral system of collection nitride flexible substrate building and extension - Google Patents
A kind of integral system of collection nitride flexible substrate building and extension Download PDFInfo
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- CN109360798A CN109360798A CN201811274849.2A CN201811274849A CN109360798A CN 109360798 A CN109360798 A CN 109360798A CN 201811274849 A CN201811274849 A CN 201811274849A CN 109360798 A CN109360798 A CN 109360798A
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
The invention discloses the integral system of a kind of collection nitride flexible substrate building and extension, solves the problems, such as that two-dimensional material can be destroyed to substrate surface pretreatment using hydrogen, belong to semiconductor material growth technology field.System includes two-dimensional material growth chamber, outer layer growth chamber, and connection two-dimensional material growth chamber and the vacuum of outer layer growth chamber interconnect chamber, and vacuum degree matches with two-dimensional material growth chamber and outer layer growth chamber.The integral system of collection nitride flexible substrate building and extension of the invention, guarantee that flexible substrate is transmitted under vacuum conditions, it avoids flexible substrate by external environmental, avoids the damage of removal pollutant bring flexible substrate, it can direct epitaxial growth high quality nitride epitaxial layer.
Description
Technical field
The present invention relates to semiconductor material growth technology field more particularly to a kind of building of collection nitride flexible substrate and outside
The integral system prolonged.
Background technique
Nitride plays in national product life more and more important as the important composition of three generations's semiconductor material
Role, light emitting diode (LED), laser diode (LD), optical detector (PD), microwave radio device and electric power electricity
The retrieval section application of the fields such as sub- device.
At this stage, usual method used by prepared by nitride compound semiconductor device material is epitaxial growth.Since it is same
The shortage of matter substrate, isoepitaxial growth technique is still immature, generallys use foreign substrate and carries out hetero-epitaxy preparation method.But
It is the defects of lattice mismatch and thermal mismatching brought by hetero-epitaxy will lead to a large amount of dislocation, nitride epitaxial layer is greatly reduced
Quality, limit its device application.
With the development of two-dimensional material, combined using between nitride epitaxial layer and two-dimensional material with Van der Waals for
Physical characteristic, can thoroughly solve the problems, such as hetero-epitaxy stress mismatch.Usually before foreign substrate epitaxial growth nitride
It needs to pre-process substrate surface with hydrogen to remove surface contamination, but as selected two-dimensional material as nitride growth
Flexible substrate, the pretreatment of hydrogen substrate surface can destroy two-dimensional material, therefore need a kind of new method in the field to solve
This problem.
Summary of the invention
The technical issues of present invention can destroy two-dimensional material to substrate surface pretreatment for hydrogen provides a kind of collection nitridation
The integral system of object flexible substrate building and extension realizes the building of nitride flexible substrate and epitaxial growth, solves nitride
Stress and defect problem in material provide growing system for high quality nitride material.
To achieve the goals above, the invention provides the following technical scheme:
A kind of integral system of collection nitride flexible substrate building and extension, including following part:
Two-dimensional material growth chamber, for providing the vacuum environment for meeting the growth of two-dimensional material substrate layer；
Outer layer growth chamber, for providing the vacuum environment for meeting the growth of nitride epitaxial layer；
And connection two-dimensional material growth chamber and the vacuum of outer layer growth chamber interconnect chamber, are used for two-dimensional material
Substrate is transferred to outer layer growth chamber by two-dimensional material growth chamber vacuum, and vacuum degree is with two-dimensional material growth chamber and outside
Prolong a layer growth chamber to match.
Specifically, the vacuum degree of two-dimensional material growth chamber can be grown according to different materials requires specific setting.
Specifically, the vacuum degree of outer layer growth chamber can be grown according to different materials requires specific setting.
Specifically, the vacuum degree of vacuum interconnection chamber is needed according to the specific setting of claim 2 and 3 and growth chamber phase
The vacuum degree matched.
Preferably, the first heating system and the first sample stage, the first sample stage position are mounted in two-dimensional material growth chamber
In the top of the first heating system.
Preferably, first heating system is graphite heating platform or tungsten heating platform, and heating temperature is up to 2000
℃.
Preferably, the first sample stage is graphite sample platform.Its diameter can specifically be set according to substrate dimension.
Preferably, the second heating system and the second sample stage are mounted in outer layer growth chamber, the second sample stage is located at
The top of second heating system.
Preferably, second heating system is graphite heating platform or tungsten heating platform, and heating temperature is up to 1800
℃。
Preferably, the second sample stage is graphite sample platform.Its diameter can specifically be set according to substrate dimension.
Preferably, mechanical delivery device is mounted in vacuum interconnection chamber, the mechanical delivery device includes a rotation
Platform and two telescopic arms being fixed on turntable, the rotation angle of turntable are 360 °, and diameter can be according to substrate dimension
Specific setting.
Specifically, the flexible size of telescopic arm can specifically be designed according to two growth chamber actual ranges.
Compared with prior art, the invention has the benefit that
The integral system of collection nitride flexible substrate building and extension of the invention, by two-dimensional material growth chamber and outside
Prolong layer growth chamber to be connected using vacuum interconnection chamber, to realize two-dimension flexible substrate layer growth-vacuum environment substrate transmitting-
The vacuum integrated process of nitride epitaxial layer growth.The present invention provides integral vacuum growing environments, guarantee flexible liner
Bottom is transmitted under vacuum conditions, is avoided flexible substrate by external environmental, is avoided removal pollutant bring flexible substrate
Damage.Therefore, two-dimension flexible substrate can direct epitaxial growth high quality nitride epitaxial layer without hydrogen pretreatment process.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only one recorded in the present invention
A little embodiments are also possible to obtain other drawings based on these drawings for those of ordinary skill in the art.
Fig. 1 is the integral system structural representation of collection nitride flexible substrate building and extension provided in an embodiment of the present invention
Figure.
Description of symbols:
1, two-dimensional material growth chamber；2, vacuum interconnects chamber；3, outer layer growth chamber；4, the first heating system；5,
First sample stage；6, the second heating system；7, the second sample stage；8, turntable；9, telescopic arm.
Specific embodiment
The invention discloses the integral system of a kind of collection nitride flexible substrate building and extension, including two-dimensional material are raw
Long chamber 1, outer layer growth chamber 3, and connection two-dimensional material growth chamber 1 and the interconnection of the vacuum of outer layer growth chamber 3
Chamber 2 guarantees that substrate is transmitted under vacuum conditions, avoids the pollution of external environment, realizes direct after flexible substrate is grown
The purpose of epitaxial growth nitride epitaxial layer.Wherein, vacuum degree can in two-dimensional material growth chamber 1, cavity material and chamber
To require to be designed according to specific growth；The first heating system 4 being provided with, the selection of heating wire material and heating method
It can require to be designed according to specific growth；The material selection for the first sample stage 5 being provided with can be according to specific growth
Temperature requirement is selected, and size can be designed according to substrate dimension.The vacuum degree of vacuum interconnection chamber 2 can need
Match with the vacuum degree of two-dimensional material growth chamber 1 and outer layer growth chamber 3.Vacuum, which interconnects, is arranged machinery in chamber 2
Transfer device, including turntable 8 and two telescopic arms 9, the flexible size of telescopic arm 9 and are held at the rotation angle of turntable 8
Load sample product size can be adjusted according to specific needs.Tube-in-tube structure can be used in telescopic arm 9.Outer layer growth chamber 3, chamber
Body material, vacuum degree can require be designed according to specific growth in chamber.Outer layer growth chamber 3, be provided with
Two heating systems 6, the selection of heating wire material and heating method can require to be designed according to specific growth；It is provided with
The material selection of second sample stage 7 can require to be selected according to specific growth temperature, and size can be according to substrate dimension
It is designed.
In order to make those skilled in the art more fully understand technical solution of the present invention, below in conjunction with embodiment to this
Invention is further detailed.
Embodiment 1
As shown in Figure 1, firstly, design two-dimensional material growth chamber 1, needs to meet vacuum degree 10 in chamber-4Pa.Placement
In in two-dimensional material growth chamber 1 the first heating system 4 select graphite heating platform, up to 1600 DEG C of heating temperature.The
The same sample platform 5 is designed as that the graphite sample platform of 2inch Circular wafer substrate can be held.
Secondly, vacuum interconnects chamber 2, need to meet vacuum degree 10 in chamber-2Pa.Wherein it is mounted with mechanical transfer dress
It sets, two telescopic arms 9 are respectively directed to two-dimensional material growth chamber 1 and outer layer growth chamber 3, it stretches having a size of 0.5 meter,
The rotation angle of turntable 8 is 360 °, and carried sample is having a size of 2inch.
Third designs outer layer growth chamber 3, needs to meet vacuum degree 10 in chamber-4Pa.It is placed in outer layer growth
The second heating system 6 selection graphite heating platform in chamber 3, up to 1100 DEG C of heating temperature.Second sample stage 7 is designed as
The graphite sample platform of 2inch Circular wafer substrate can be held.
Embodiment 2
As shown in Figure 1, firstly, design two-dimensional material growth chamber 1, needs to meet vacuum degree 10 in chamber-4Pa.Placement
In in two-dimensional material growth chamber 1 the first heating system 4 select tungsten heating platform, up to 1700 DEG C of heating temperature.First
Sample stage 5 is designed as that the graphite sample platform of 4inch Circular wafer substrate can be held.
Secondly, vacuum interconnects chamber 2, need to meet vacuum degree 10 in chamber-2Pa.Wherein it is mounted with mechanical transfer dress
It sets, two telescopic arm 9 is respectively directed to two-dimensional material growth chamber 1 and outer layer growth chamber 3, it stretches having a size of 1.5 meters,
The rotation angle of turntable 8 is 360 °, and carried sample is having a size of 4inch.
Third designs outer layer growth chamber 3, needs to meet vacuum degree 10 in chamber-3Pa.It is placed in outer layer growth
The second heating system 6 selection graphite heating platform in chamber 3, up to 1300 DEG C of heating temperature.Second sample stage 7 is designed as
The graphite sample platform of 4inch Circular wafer substrate can be held.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
Invention is explained in detail, those skilled in the art should understand that: it still can be to aforementioned each implementation
Example documented by technical solution modify perhaps equivalent replacement of some of the technical features but these modification or
Replacement, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (8)
1. a kind of integral system of collection nitride flexible substrate building and extension, which is characterized in that including following part:
Two-dimensional material growth chamber, for providing the vacuum environment for meeting the growth of two-dimensional material substrate layer；
Outer layer growth chamber, for providing the vacuum environment for meeting the growth of nitride epitaxial layer；
And connection two-dimensional material growth chamber and the vacuum of outer layer growth chamber interconnect chamber, are used for two-dimensional material substrate
Outer layer growth chamber, vacuum degree and two-dimensional material growth chamber and epitaxial layer are transferred to by two-dimensional material growth chamber vacuum
Growth chamber matches.
2. the integral system of collection nitride flexible substrate building and extension according to claim 1, which is characterized in that two
It is mounted with the first heating system and the first sample stage in dimension Material growth chamber, the first sample stage is located at the upper of the first heating system
Side.
3. the integral system of collection nitride flexible substrate building and extension according to claim 2, which is characterized in that institute
Stating the first heating system is graphite heating platform or tungsten heating platform, and heating temperature is up to 2000 DEG C.
4. the integral system of collection nitride flexible substrate building and extension according to claim 2, which is characterized in that the
The same sample platform is graphite sample platform.
5. the integral system of collection nitride flexible substrate building and extension according to claim 1, which is characterized in that outer
Prolong and be mounted with the second heating system and the second sample stage in layer growth chamber, the second sample stage is located at the upper of the second heating system
Side.
6. the integral system of collection nitride flexible substrate building and extension according to claim 5, which is characterized in that institute
Stating the second heating system is graphite heating platform or tungsten heating platform, and heating temperature is up to 1800 DEG C.
7. the integral system of collection nitride flexible substrate building and extension according to claim 5, which is characterized in that the
Two sample stages are graphite sample platform.
8. the integral system of collection nitride flexible substrate building and extension according to claim 1, which is characterized in that true
Mechanical delivery device is mounted in sky interconnection chamber, the mechanical delivery device includes that a turntable and two are fixed on rotation
Telescopic arm on platform, the rotation angle of turntable are 360 °.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070020903A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Hybrid PVD-CVD system |
| CN103594551A (en) * | 2013-10-17 | 2014-02-19 | 中国电子科技集团公司第四十八研究所 | Silicon-based gallium arsenide epitaxial material and device manufacturing equipment and manufacturing method |
| CN104393128A (en) * | 2014-11-19 | 2015-03-04 | 北京中科天顺信息技术有限公司 | Nitride LED epitaxial structure with SiC substrate and preparation method of nitride LED epitaxial structur |
| CN106148912A (en) * | 2015-03-26 | 2016-11-23 | 北京大学 | For growing compound reaction outdoor rolling equipment and the growing method of electronic device |
| CN107587189A (en) * | 2017-09-26 | 2018-01-16 | 中国科学院长春光学精密机械与物理研究所 | A kind of multi-chamber nitride material epitaxial system of integrated Technology for Heating Processing |
| CN108511322A (en) * | 2018-03-29 | 2018-09-07 | 太原理工大学 | A method of preparing GaN film in two-dimentional graphite substrate |
-
2018
- 2018-10-30 CN CN201811274849.2A patent/CN109360798A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070020903A1 (en) * | 2005-07-19 | 2007-01-25 | Applied Materials, Inc. | Hybrid PVD-CVD system |
| CN103594551A (en) * | 2013-10-17 | 2014-02-19 | 中国电子科技集团公司第四十八研究所 | Silicon-based gallium arsenide epitaxial material and device manufacturing equipment and manufacturing method |
| CN104393128A (en) * | 2014-11-19 | 2015-03-04 | 北京中科天顺信息技术有限公司 | Nitride LED epitaxial structure with SiC substrate and preparation method of nitride LED epitaxial structur |
| CN106148912A (en) * | 2015-03-26 | 2016-11-23 | 北京大学 | For growing compound reaction outdoor rolling equipment and the growing method of electronic device |
| CN107587189A (en) * | 2017-09-26 | 2018-01-16 | 中国科学院长春光学精密机械与物理研究所 | A kind of multi-chamber nitride material epitaxial system of integrated Technology for Heating Processing |
| CN108511322A (en) * | 2018-03-29 | 2018-09-07 | 太原理工大学 | A method of preparing GaN film in two-dimentional graphite substrate |
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Application publication date: 20190219 |