CN205275791U - Artifical growing device of diamond single crystal - Google Patents
Artifical growing device of diamond single crystal Download PDFInfo
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- CN205275791U CN205275791U CN201620008459.0U CN201620008459U CN205275791U CN 205275791 U CN205275791 U CN 205275791U CN 201620008459 U CN201620008459 U CN 201620008459U CN 205275791 U CN205275791 U CN 205275791U
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Abstract
The utility model provides an artifical growing device of diamond single crystal, includes conducting strip, electrically conductive graphite annulus, fire -resistant insulation cover, carbon tube, isolated trench and electrically conductive graphite flake, electrically conductive graphite flake sets up in the carbon tube with isolated trench, electrically conductive graphite flake and isolated trench form diamond growth of single crystal's enclosure space, the outside of carbon tube is provided with fire -resistant insulation cover and end cover, is provided with electrically conductive graphite annulus in the end cover, the outside of end cover is provided with the conducting strip, electrically conduct the graphite annulus both ends respectively with carbon tube and conducting strip contact. The device simple structure, the leakproofness is good, is equipped with graphite block and metal catalyst piece in the enclosure space, adopts high temperature high pressure condition, through HPHT (high temperature high pressure), utilizes the temperature gradient method can sprout the diamond single crystal that the particle diameter is greater than 10mm's large granule diamond monocrystal or has II b types of semiconductor nature.
Description
Technical field
This utility model relates to a kind of device for Artificial Growth diamond single crystal, belongs to Growth of Single Crystal Diamond technical field.
Background technology
II b type diamond is the optimum semi-conducting material that current nature has been found that, its high thermal conductivity coefficient, high electronics and hole mobility, high dielectric breakdown field, low-dielectric loss and broad-band gap, be that other any material can not be compared. The II b type diamond with semiconductor property of naturally occurring is very rare, to such an extent as to published research, technology or method are all as backing material using II a type diamond of bigger for naturally occurring relative populations or Artificial Growth, carry out semiconductor wafer processing, described semiconductor wafer processing refers to electron beam irradiation, stepper, other this type of technology adopted in the micro structure of silicon or other conventional quasiconductor.
Chinese patent literature CN1840472B disclosed " manufacture method of diamond single crystal substrate and diamond single crystal substrate ", it is after the Centimeter Level diamond single crystal machining that HTHP method is grown, splice using as the diamond kind substrate with large surface area by crystal face and angle, diamond kind substrate is had by chemical vapour deposition technique epitaxial growth the diamond crystal of large surface area, and it can be used as backing material to carry out semiconductor wafer processing. The diamond single crystal that in method disclosed in Japanese documentation 11-1392A, the manufacture of semiconductor diamond is made up of low-refraction plane makes the diamond substrate of high surface area, by chemical vapour deposition (CVD) heteroepitaxy diamond on this plane, as the backing material of diamond semiconductor. Method disclosed in Japanese documentation 3-75298A is by processing many high pressure phase materials with the crystal orientation of homophase substantially mutually, form the substrate of its nucleation with chemical vapor-phase growing, and by chemical vapour deposition (CVD) at Grown monocrystalline, thus obtaining large single crystal. Said method is based on II a type diamond single crystal of artificial HTHP method growth and only has Centimeter Level, it is difficult with the processing unit (plant) of chip design into diameter a few inches using it as substrate, and be difficult to overcome the difficulty run in the peripheral step of follow-up anti-light erosion layer coating step.
Above-mentioned CN1840472B disclosed " manufacture method of diamond single crystal substrate and diamond single crystal substrate " although described in method overcome some defects in method described in two Japanese documentations, but its guiding theory is consistent with the preparation principle of semiconductor diamond, it is all be spliced into the crystal with large surface area after first being processed by the monocrystalline of multiple small surface area, in this, as kind of a substrate, the diamond crystal that recycling chemical vapour deposition technique goes out large surface area at this kind of Grown is substrate, carries out diamond semiconductor wafer processing. Above-mentioned chemical vapour deposition technique (CVD) is adopted to have the diamond crystal of large surface area at diamond crystal kind Grown, and carry out diamond semiconductor wafer processing with this diamond crystal for substrate, although the processing unit (plant) of existing semiconductor wafer can be suitable for, but when CVD growing diamond crystal, there is bigger difficulty.
(1) known technology shows that each crystal face of diamond single crystal is in identical temperature, the speed of growth under pressure condition is inconsistent, { the 100} face of crystal, { 110} face, { 111} face is respectively provided with optimum growth conditions, in same growth room, extremely difficult accomplish that adapting to each crystal face has the different growing environment of the identical speed of growth respectively, above-mentioned situation CN1840472B disclosed " manufacture method of diamond single crystal substrate and diamond single crystal substrate " is in a specific embodiment it have been mentioned that mistake, different for solving the different crystal face speeds of growth under the same terms, cause that defect occurs in diamond crystal, the problem affecting semiconductor wafer processing, the processing to the crystal as kind of substrate of this patent documentation, splicing etc. proposes extremely strict condition. easily grow polycrystalline or druse because the speed of growth of crystal face is different hence with CVD when diamond crystal kind Grown diamond crystal, can not meet the requirement preparing diamond semiconductor wafer,
(2) because above-mentioned reason, CVD yield rate when diamond crystal Grown diamond crystal is low, and production cost is high.
Summary of the invention
The deficiency that this utility model exists for existing diamond single crystal technology of preparing, it is provided that a kind of simple in construction, the particle diameter diamond single crystal Artificial Growth device more than 10mm can be produced.
Diamond single crystal Artificial Growth device of the present utility model, by the following technical solutions:
This device, including conducting strip, electrically conductive graphite ring, fire resistant heat preserving set, graphite-pipe, insulation tank and electrically conductive graphite sheet; Electrically conductive graphite sheet and insulation tank are arranged in graphite-pipe, electrically conductive graphite sheet is arranged on the opening part of insulation tank, both form the closing space of Growth of Single Crystal Diamond, the arranged outside of graphite-pipe has fire resistant heat preserving set, the top and bottom of graphite-pipe are provided with end cap, being provided with electrically conductive graphite ring in end cap, the arranged outside of end cap has conducting strip, and the two ends of electrically conductive graphite ring contact with graphite-pipe and conducting strip respectively.
Described fire resistant heat preserving set is to be set with dolomite ring in pyrophyllite block to form.
Closing space built with graphite block and metal solvent block, graphite block or admixture boron nitride in metal solvent block, metal solvent block is placed in the lower section of graphite block. Graphite-pipe is used for heating, and electrically conductive graphite sheet and graphite block provide carbon source for Growth of Single Crystal Diamond. The conducting strip of upper and lower side contacts with two conduction top hammers of cubic apparatus hydraulic press respectively, the low-tension current that the heating transformer of hydraulic press provides is by conducting electricity top hammer, conducting strip, electrically conductive graphite ring and graphite-pipe formation heating circuit, low-tension current produces heat by graphite-pipe, and fire resistant heat preserving set and upper and lower side build the effect of sealing, pressure transmission and maintenance temperature. The heat that graphite-pipe produces transfers heat to inside cavity through insulation sleeve, it is ensured that the temperature that crystal growth needs. Graphite block and metal solvent block can dissolve each other when reaching eutectic temperature, and carbon shifts to the bottom seed crystal position of metal solvent block gradually under the effect of temperature difference. By diamond seeds and other process conditions, produce the particle diameter bulky diamond monocrystal more than 10mm or there is the diamond single crystal of II b type of semiconductor property.
This utility model simple in construction, good airproof performance, by HPHT (High Temperature High Pressure), utilize temperature gradient method can grow the particle diameter bulky diamond monocrystal more than 10mm or have the diamond single crystal of II b type of semiconductor property.
Accompanying drawing explanation
Fig. 1 is the structural representation of this utility model diamond single crystal Artificial Growth device.
Wherein: 1, conducting strip, 2, electrically conductive graphite ring, 3, pyrophyllite block, 4, white clouds stone ring, 5, graphite-pipe, 6, insulation tank, 7, electrically conductive graphite sheet, 8, graphite block, 9, metal solvent block, 10, end cap.
Detailed description of the invention
The structure of this utility model diamond single crystal Artificial Growth device is as it is shown in figure 1, include conducting strip 1, electrically conductive graphite ring 2, pyrophyllite block 3, white clouds stone ring 4, graphite-pipe 5, insulation tank 6 and electrically conductive graphite sheet 7. Electrically conductive graphite sheet 7 and insulation tank 6 are arranged in graphite-pipe 5, and electrically conductive graphite sheet 7 is arranged on the opening part of insulation tank 6, both form the closing space of Growth of Single Crystal Diamond, and this space is built with graphite block 8 and metal solvent block 9, and metal solvent block 9 is placed in the lower section of graphite block 8. Graphite-pipe 5 is used for heating. The arranged outside of graphite-pipe 5 has fire resistant heat preserving set, and this fire resistant heat preserving set is to be set with dolomite ring 4 in pyrophyllite block 3 to form, and pyrophillite and dolomite are refractory material, and pyrophyllite block 3 is used for sealing, pressure transmission and insulation, and white clouds stone ring 4 is as insulation material. The top and bottom of graphite-pipe 5 are provided with end cap 10, are provided with electrically conductive graphite ring 2 in end cap 10. The arranged outside of end cap 10 has conducting strip 1, and the two ends of electrically conductive graphite ring 2 contact with graphite-pipe 5 and conducting strip 1 respectively. Electrically conductive graphite sheet 7 and graphite block 8 provide carbon source for Growth of Single Crystal Diamond.
This utility model selects the commonly used cubic apparatus hydraulic press of existing Artificial Growth diamond as pressurized equipment, it is ensured that can provide the pressure condition meeting diamond crystal 5.6-5.9GPa. The conducting strip 1 of upper and lower side contacts with two conduction top hammers of cubic apparatus hydraulic press respectively, the low-tension current that the heating transformer of hydraulic press provides forms heating circuit by conduction top hammer, conducting strip 1, electrically conductive graphite ring 2 and graphite-pipe 5, low-tension current produces heat by graphite-pipe 5, and pyrophyllite block 3, white clouds stone ring 4 and upper and lower end cap 10 play the effect of sealing, pressure transmission and maintenance temperature. The heat that graphite-pipe 5 produces transfers heat to inside cavity through insulation sleeve 6, it is ensured that the temperature that crystal growth needs. The metal solvent block 9 of graphite block 8 and boracic can dissolve each other when reaching eutectic temperature, and carbon shifts to the bottom seed crystal position of metal solvent block 9 gradually under the effect of temperature difference �� T.
{ 100} face is as aufwuchsplate for of the diamond seeds of employing particle diameter 0.5-1mm, when reaching in cavity to be higher than graphite block with metal solvent block eutectic temperature, make crystal seed { growth in 100} face is had the advantage all the time, crystal is grown up gradually along aufwuchsplate, produces the particle diameter bulky diamond monocrystal more than 10mm.
Graphite block and metal solvent block fill a certain amount of boron, adopt { 100} a face or { 110} face is as aufwuchsplate of the ?a-type diamond seeds of particle diameter 0.5-1mm, when reaching in cavity to be higher than graphite block with metal solvent block eutectic temperature, { the 100} face or { 110} face can grow and keep preferential of crystal seed, crystal is grown up gradually along aufwuchsplate, will grow the particle diameter diamond single crystal more than 10mm and the II b type with semiconductor property.
Claims (2)
1. a diamond single crystal Artificial Growth device, including conducting strip, electrically conductive graphite ring, fire resistant heat preserving set, graphite-pipe, insulation tank and electrically conductive graphite sheet; It is characterized in that: electrically conductive graphite sheet and insulation tank are arranged in graphite-pipe, electrically conductive graphite sheet is arranged on the opening part of insulation tank, both form the closing space of Growth of Single Crystal Diamond, the arranged outside of graphite-pipe has fire resistant heat preserving set, the top and bottom of graphite-pipe are provided with end cap, being provided with electrically conductive graphite ring in end cap, the arranged outside of end cap has conducting strip, and the two ends of electrically conductive graphite ring contact with graphite-pipe and conducting strip respectively.
2. diamond single crystal Artificial Growth device according to claim 1, is characterized in that: described fire resistant heat preserving set is to be set with dolomite ring in pyrophyllite block to form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620008459.0U CN205275791U (en) | 2016-01-06 | 2016-01-06 | Artifical growing device of diamond single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620008459.0U CN205275791U (en) | 2016-01-06 | 2016-01-06 | Artifical growing device of diamond single crystal |
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| Publication Number | Publication Date |
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| CN205275791U true CN205275791U (en) | 2016-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201620008459.0U Expired - Fee Related CN205275791U (en) | 2016-01-06 | 2016-01-06 | Artifical growing device of diamond single crystal |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105603519A (en) * | 2016-01-06 | 2016-05-25 | 济南中乌新材料有限公司 | Artificial growth method and device of IIb type diamond monocrystal with semiconductor properties |
| CN105648526A (en) * | 2016-01-06 | 2016-06-08 | 济南中乌新材料有限公司 | Method and device for artificially growing large-grain diamond monocrystals |
| US10141262B2 (en) | 2010-07-09 | 2018-11-27 | Micron Technology, Inc. | Electrically conductive laminate structures |
-
2016
- 2016-01-06 CN CN201620008459.0U patent/CN205275791U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10141262B2 (en) | 2010-07-09 | 2018-11-27 | Micron Technology, Inc. | Electrically conductive laminate structures |
| US10381308B2 (en) | 2010-07-09 | 2019-08-13 | Micron Technology, Inc. | Electrically conductive laminate structures |
| US10679943B2 (en) | 2010-07-09 | 2020-06-09 | Micron Technology, Inc. | Electrically conductive laminate structures |
| US10879178B2 (en) | 2010-07-09 | 2020-12-29 | Micron Technology, Inc. | Electrically conductive laminate structures |
| CN105603519A (en) * | 2016-01-06 | 2016-05-25 | 济南中乌新材料有限公司 | Artificial growth method and device of IIb type diamond monocrystal with semiconductor properties |
| CN105648526A (en) * | 2016-01-06 | 2016-06-08 | 济南中乌新材料有限公司 | Method and device for artificially growing large-grain diamond monocrystals |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160601 Termination date: 20210106 |
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| CF01 | Termination of patent right due to non-payment of annual fee |