CN109354828A - A kind of encapsulating material for light emitting diode - Google Patents
A kind of encapsulating material for light emitting diode Download PDFInfo
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- CN109354828A CN109354828A CN201811276584.XA CN201811276584A CN109354828A CN 109354828 A CN109354828 A CN 109354828A CN 201811276584 A CN201811276584 A CN 201811276584A CN 109354828 A CN109354828 A CN 109354828A
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- light emitting
- emitting diode
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- silicone resin
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- 239000000463 material Substances 0.000 title claims abstract description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 46
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229920002050 silicone resin Polymers 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229920002545 silicone oil Polymers 0.000 claims abstract description 28
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 26
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229940018564 m-phenylenediamine Drugs 0.000 claims abstract description 24
- 239000004593 Epoxy Substances 0.000 claims abstract description 20
- 239000003822 epoxy resin Substances 0.000 claims abstract description 20
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 20
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 17
- 239000003054 catalyst Substances 0.000 claims abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 239000001257 hydrogen Substances 0.000 claims abstract description 14
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 14
- 239000002245 particle Substances 0.000 claims abstract description 14
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 14
- 229920002554 vinyl polymer Polymers 0.000 claims abstract description 14
- 239000004952 Polyamide Substances 0.000 claims abstract description 13
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 13
- 229920002647 polyamide Polymers 0.000 claims abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 12
- 239000003063 flame retardant Substances 0.000 claims abstract description 12
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 12
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 10
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 10
- 229940106691 bisphenol a Drugs 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 7
- -1 Methyl vinyl Chemical group 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims description 3
- 125000003963 dichloro group Chemical group Cl* 0.000 claims description 3
- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 claims description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical class C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 3
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical group CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 claims description 2
- 229930185605 Bisphenol Natural products 0.000 claims description 2
- 238000006555 catalytic reaction Methods 0.000 claims 1
- 238000002485 combustion reaction Methods 0.000 claims 1
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 claims 1
- 239000011856 silicon-based particle Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
- C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The invention discloses a kind of encapsulating materials for light emitting diode, it include following component according to weight point meter: 30~50 parts of bisphenol A type epoxy resin, 15~25 parts of epoxy modified silicone resin, 10~20 parts of methyl MQ silicone resin, 5~15 parts of polyamide, 5~10 parts of m-phenylene diamine (MPD), 10~20 parts of vinyl silicone oil, 3~8 parts of containing hydrogen silicone oil, 2~5 parts of platinum complex catalyst, 8~12 parts of modified nano silicon dioxide particles, 1~3 part of tackifier, 0.5~1.5 part of fire retardant, 1~3 part of curing agent, 1~2 part of antioxidant, 2~5 parts of silane coupling agent, wherein, the weight ratio of the bisphenol A type epoxy resin and the epoxy modified silicone resin is 1.5~2.5:1.Encapsulating material hardness in the present invention is high, and good mechanical protection can be provided for light emitting diode, steam can be effectively prevent to enter device inside, is conducive to the long-time service stability of light emitting diode, and does not influence the service life of light emitting diode.
Description
Technical field
The present invention relates to LED technology fields, more particularly to a kind of encapsulating material for light emitting diode.
Background technique
Light emitting diode is to belong to electroluminescent device, and structure is mainly made of PN junction chip, electrode and optical system.
With operating current is small, energy consumption is very low, structure is simple, small in size, light compared with the light sources such as traditional incandescent lamp, fluorescent lamp
Just, the advantages that service life is long.In recent years, the technology development of LED is swift and violent, with LED light cause and brightness be gradually increased, it is photochromic constantly
Abundant, application field also gradually expands to lighting area from display field.The luminescence chip of LED is smaller, typical to shine
Area is 0125mm2, it is encapsulated in host material, is connected by lead with external electrode.Transparent material is encapsulated on LED light-emitting surface
Material, effect is the spatial distribution state for exporting the luminous flux of chip to the maximum extent, while controlling output light, plays light
Learn the effect of lens.
GaN base power-type White LED is the emphasis developed at present, have heat big, junction temperature or chip part junction temperature it is excessively high,
The features such as emission wavelength is short.The encapsulating materials such as traditional transparent epoxy resin, acrylic resin, polycarbonate, in short-wavelength light
Permeability, light fastness aging etc. have been unable to meet requirement.
For this reason, it is necessary to be able to solve existing in view of the above-mentioned problems, propose a kind of encapsulating material for light emitting diode
There is the problem of technology.
Summary of the invention
The purpose of the present invention is to provide a kind of encapsulating material for light emitting diode, with overcome it is in the prior art not
Foot.
To achieve the above object, the invention provides the following technical scheme:
A kind of encapsulating material for light emitting diode includes following component: bisphenol A type epoxy resin according to weight point meter
30~50 parts, 15~25 parts of epoxy modified silicone resin, 10~20 parts of methyl MQ silicone resin, 5~15 parts of polyamide, isophthalic two
5~10 parts of amine, 10~20 parts of vinyl silicone oil, 3~8 parts of containing hydrogen silicone oil, 2~5 parts of platinum complex catalyst, modified nano-silica
8~12 parts of silicon carbide particle, 1~3 part of tackifier, 0.5~1.5 part of fire retardant, 1~3 part of curing agent, 1~2 part of antioxidant, silane
2~5 parts of coupling agent, wherein the weight ratio of the bisphenol A type epoxy resin and the epoxy modified silicone resin is 1.5
~2.5:1.
Preferably, the platinum complex catalyst is selected from platinumMethyl vinyl silicone complex compound, platinumPhthalic acid
The mixing of one or more of platinum complex of diethylester complex compound, dicyclopentadiene platinous chloride, dichloro bis- (triphenylphosphines)
Object.
Preferably, the tackifier are the mixture of alkyl naphthalene resin, polyborosiloxane, diphenyl silanediol.
Preferably, the weight ratio of the bisphenol A type epoxy resin and the epoxy modified silicone resin is 2:1.
It preferably, include following component according to weight point meter: 35~45 parts of bisphenol A type epoxy resin, epoxy-modified organic
17.5~22.5 parts of silicone resin, 12.5~17.5 parts of methyl MQ silicone resin, 7.5~12.5 parts of polyamide, 6~9 parts of m-phenylene diamine (MPD),
12~18 parts of vinyl silicone oil, 4~6 parts of containing hydrogen silicone oil, 2.75~4.25 parts of platinum complex catalyst, modified manometer silicon dioxide
9~11 parts of particle, 1.5~2.5 parts of tackifier, 0.75~1.25 part of fire retardant, 1.5~2.5 parts of curing agent, antioxidant 1.2~
1.8 parts, 2.75~4.25 parts of silane coupling agent.
Preferably, include following component according to weight point meter: 40 parts of bisphenol A type epoxy resin, epoxy modified silicone tree
20 parts of rouge, 15 parts of methyl MQ silicone resin, 10 parts of polyamide, 7.5 parts of m-phenylene diamine (MPD), 15 parts of vinyl silicone oil, 5 parts of containing hydrogen silicone oil,
3 parts of platinum complex catalyst, 10 parts of modified nano silicon dioxide particles, 2 parts of tackifier, 1 part of fire retardant, 2 parts of curing agent, antioxygen
1.5 parts of agent, 3.5 parts of silane coupling agent.
Compared with the prior art, the advantages of the present invention are as follows: the encapsulating material hardness in the present invention is high, can be luminous two
Pole pipe provides good mechanical protection, steam can be effectively prevent to enter device inside, is conducive to making for a long time for light emitting diode
With stability, and the service life of light emitting diode is not influenced.
Specific embodiment
The present invention is described further by the following example: according to following embodiments, the present invention may be better understood.
However, as it will be easily appreciated by one skilled in the art that specific material ratio, process conditions and its result described in embodiment are only used
In illustrating the present invention, without the present invention described in detail in claims should will not be limited.
The present invention discloses a kind of encapsulating material for light emitting diode, includes following component: bisphenol-A according to weight point meter
30~50 parts of type epoxy resin, 15~25 parts of epoxy modified silicone resin, 10~20 parts of methyl MQ silicone resin, polyamide 5~
15 parts, 5~10 parts of m-phenylene diamine (MPD), 10~20 parts of vinyl silicone oil, 3~8 parts of containing hydrogen silicone oil, 2~5 parts of platinum complex catalyst,
8~12 parts of modified nano silicon dioxide particles, 1~3 part of tackifier, 0.5~1.5 part of fire retardant, 1~3 part of curing agent, antioxidant
1~2 part, 2~5 parts of silane coupling agent, wherein the weight of the bisphenol A type epoxy resin and the epoxy modified silicone resin
The ratio between amount is 1.5~2.5:1.
Wherein, the platinum complex catalyst is selected from platinumMethyl vinyl silicone complex compound, platinumPhthalic acid two
One or more of the platinum complex of ethyl ester complex compound, dicyclopentadiene platinous chloride, dichloro bis- (triphenylphosphines) mixture;
The tackifier are the mixture of alkyl naphthalene resin, polyborosiloxane, diphenyl silanediol;Further, the bisphenol A-type
The weight ratio of epoxy resin and the epoxy modified silicone resin is 2:1.
The encapsulating material that light emitting diode is used in the present invention is illustrated with specific embodiment below.
Embodiment 1
Include following component according to weight point meter: 30 parts of bisphenol A type epoxy resin, 15 parts of epoxy modified silicone resin,
10 parts of methyl MQ silicone resin, 5 parts of polyamide, 5 parts of m-phenylene diamine (MPD), 10 parts of vinyl silicone oil, 3 parts of containing hydrogen silicone oil, platinum complex is urged
2 parts of agent, 8 parts of modified nano silicon dioxide particles, 1 part of tackifier, 0.5 part of fire retardant, 1 part of curing agent, 1 part of antioxidant, silicon
2 parts of alkane coupling agent.
Embodiment 2
Include following component according to weight point meter: 35 parts of bisphenol A type epoxy resin, epoxy modified silicone resin 17.5
Part, 12.5 parts of methyl MQ silicone resin, 7.5 parts of polyamide, 6 parts of m-phenylene diamine (MPD), 12 parts of vinyl silicone oil, 4 parts of containing hydrogen silicone oil, platinum network
2.75 parts of mixture catalyst, 9 parts of modified nano silicon dioxide particles, 1.5 parts of tackifier, 0.75 part of fire retardant, curing agent 1.5
Part, 1.2 parts of antioxidant, 2.75 parts of silane coupling agent.
Embodiment 3
Include following component according to weight point meter: 40 parts of bisphenol A type epoxy resin, 20 parts of epoxy modified silicone resin,
15 parts of methyl MQ silicone resin, 10 parts of polyamide, 7.5 parts of m-phenylene diamine (MPD), 15 parts of vinyl silicone oil, 5 parts of containing hydrogen silicone oil, platinum complex
3 parts of catalyst, 10 parts of modified nano silicon dioxide particles, 2 parts of tackifier, 1 part of fire retardant, 2 parts of curing agent, 1.5 parts of antioxidant,
3.5 parts of silane coupling agent.
Embodiment 4
Include following component according to weight point meter: 45 parts of bisphenol A type epoxy resin, epoxy modified silicone resin 22.5
Part, 17.5 parts of methyl MQ silicone resin, 12.5 parts of polyamide, 9 parts of m-phenylene diamine (MPD), 18 parts of vinyl silicone oil, 6 parts of containing hydrogen silicone oil, platinum
4.25 parts of complex compound catalyst, 11 parts of modified nano silicon dioxide particles, 2.5 parts of tackifier, 1.25 parts of fire retardant, curing agent
2.5 parts, 1.8 parts of antioxidant, 4.25 parts of silane coupling agent.
Embodiment 5
Include following component according to weight point meter: 50 parts of bisphenol A type epoxy resin, 25 parts of epoxy modified silicone resin,
20 parts of methyl MQ silicone resin, 15 parts of polyamide, 10 parts of m-phenylene diamine (MPD), 20 parts of vinyl silicone oil, 8 parts of containing hydrogen silicone oil, platinum complex
5 parts of catalyst, 12 parts of modified nano silicon dioxide particles, 3 parts of tackifier, 1.5 parts of fire retardant, 3 parts of curing agent, 2 parts of antioxidant,
5 parts of silane coupling agent.
In encapsulating material of the invention, by be added vinyl silicone oil, containing hydrogen silicone oil, modified nano silicon dioxide particles and
Silane coupling agent enables modified nano silicon dioxide particles relatively evenly to disperse in encapsulating material, seals obtained from
The surface of package material hardness with higher, Rockwell hardness can provide very well up to 98~106 for light emitting diode
Mechanical protection, steam can be effectively prevent to enter device inside, be conducive to the long-time service stability of light emitting diode, and
The service life of light emitting diode is not influenced.
Finally, it is to be noted that, the terms "include", "comprise" or its any other variant be intended to it is non-exclusive
Property include so that include a series of elements process, method, article or equipment not only include those elements, but also
Further include other elements that are not explicitly listed, or further include for this process, method, article or equipment it is intrinsic
Element.
Claims (6)
1. a kind of encapsulating material for light emitting diode, which is characterized in that include following component: bisphenol-A according to weight point meter
30~50 parts of type epoxy resin, 15~25 parts of epoxy modified silicone resin, 10~20 parts of methyl MQ silicone resin, polyamide 5~
15 parts, 5~10 parts of m-phenylene diamine (MPD), 10~20 parts of vinyl silicone oil, 3~8 parts of containing hydrogen silicone oil, 2~5 parts of platinum complex catalyst,
8~12 parts of modified nano silicon dioxide particles, 1~3 part of tackifier, 0.5~1.5 part of fire retardant, 1~3 part of curing agent, antioxidant
1~2 part, 2~5 parts of silane coupling agent, wherein the weight of the bisphenol A type epoxy resin and the epoxy modified silicone resin
The ratio between amount is 1.5~2.5:1.
2. the encapsulating material according to claim 1 for light emitting diode, which is characterized in that the platinum complex catalysis
Agent is selected from platinumMethyl vinyl silicone complex compound, platinumDiethyl phthalate complex compound, dicyclopentadiene dichloride
One or more of the platinum complex of platinum, dichloro bis- (triphenylphosphines) mixture.
3. the encapsulating material according to claim 1 for light emitting diode, which is characterized in that the tackifier are alkyl
Naphthalene resin, polyborosiloxane, diphenyl silanediol mixture.
4. the encapsulating material according to claim 1 for light emitting diode, which is characterized in that the bisphenol type epoxy
The weight ratio of resin and the epoxy modified silicone resin is 2:1.
5. the encapsulating material according to claim 1 for light emitting diode, which is characterized in that include according to weight point meter
Following component: 35~45 parts of bisphenol A type epoxy resin, 17.5~22.5 parts of epoxy modified silicone resin, methyl MQ silicone resin
12.5~17.5 parts, 7.5~12.5 parts of polyamide, 6~9 parts of m-phenylene diamine (MPD), 12~18 parts of vinyl silicone oil, containing hydrogen silicone oil 4~6
Part, 2.75~4.25 parts of platinum complex catalyst, 9~11 parts of modified nano silicon dioxide particles, 1.5~2.5 parts of tackifier, resistance
0.75~1.25 part of agent, 1.5~2.5 parts of curing agent, 1.2~1.8 parts of antioxidant, 2.75~4.25 parts of silane coupling agent of combustion.
6. the encapsulating material according to claim 1 for light emitting diode, which is characterized in that include according to weight point meter
Following component: 40 parts of bisphenol A type epoxy resin, 20 parts of epoxy modified silicone resin, 15 parts of methyl MQ silicone resin, polyamide 10
Part, 7.5 parts of m-phenylene diamine (MPD), 15 parts of vinyl silicone oil, 5 parts of containing hydrogen silicone oil, 3 parts of platinum complex catalyst, modified nano-silica
10 parts of silicon particle, 2 parts of tackifier, 1 part of fire retardant, 2 parts of curing agent, 1.5 parts of antioxidant, 3.5 parts of silane coupling agent.
Priority Applications (1)
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CN201811276584.XA CN109354828A (en) | 2018-10-30 | 2018-10-30 | A kind of encapsulating material for light emitting diode |
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CN201811276584.XA CN109354828A (en) | 2018-10-30 | 2018-10-30 | A kind of encapsulating material for light emitting diode |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102977553A (en) * | 2012-11-06 | 2013-03-20 | 中科院广州化学有限公司 | Epoxy/silicone polymer composite material, and preparation method and application thereof |
CN107266864A (en) * | 2017-07-26 | 2017-10-20 | 合肥同佑电子科技有限公司 | It is a kind of for insulating materials of LED package and preparation method thereof |
CN108102601A (en) * | 2017-12-20 | 2018-06-01 | 烟台德邦先进硅材料有限公司 | A kind of organic silicon adhesive for UV LED chip encapsulation |
CN108511584A (en) * | 2018-03-12 | 2018-09-07 | 合肥同佑电子科技有限公司 | A kind of special encapsulating material of light emitting diode and preparation method thereof |
-
2018
- 2018-10-30 CN CN201811276584.XA patent/CN109354828A/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102977553A (en) * | 2012-11-06 | 2013-03-20 | 中科院广州化学有限公司 | Epoxy/silicone polymer composite material, and preparation method and application thereof |
CN107266864A (en) * | 2017-07-26 | 2017-10-20 | 合肥同佑电子科技有限公司 | It is a kind of for insulating materials of LED package and preparation method thereof |
CN108102601A (en) * | 2017-12-20 | 2018-06-01 | 烟台德邦先进硅材料有限公司 | A kind of organic silicon adhesive for UV LED chip encapsulation |
CN108511584A (en) * | 2018-03-12 | 2018-09-07 | 合肥同佑电子科技有限公司 | A kind of special encapsulating material of light emitting diode and preparation method thereof |
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