CN109346590A - A kind of full spectrum white-light LED device - Google Patents
A kind of full spectrum white-light LED device Download PDFInfo
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- CN109346590A CN109346590A CN201811386030.5A CN201811386030A CN109346590A CN 109346590 A CN109346590 A CN 109346590A CN 201811386030 A CN201811386030 A CN 201811386030A CN 109346590 A CN109346590 A CN 109346590A
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- negative electrode
- full spectrum
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- 238000001228 spectrum Methods 0.000 title claims abstract description 29
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000003292 glue Substances 0.000 claims abstract description 19
- 239000000843 powder Substances 0.000 claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052709 silver Inorganic materials 0.000 claims abstract description 17
- 239000004332 silver Substances 0.000 claims abstract description 17
- 239000004411 aluminium Substances 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- 239000000919 ceramic Substances 0.000 claims abstract description 8
- 229910000679 solder Inorganic materials 0.000 claims abstract description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000003466 welding Methods 0.000 claims abstract description 7
- 241001062009 Indigofera Species 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 16
- 238000000295 emission spectrum Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 229910003564 SiAlON Inorganic materials 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 abstract description 11
- 238000000576 coating method Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 abstract description 4
- 244000247747 Coptis groenlandica Species 0.000 abstract description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 abstract description 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 238000001746 injection moulding Methods 0.000 abstract 1
- 230000032683 aging Effects 0.000 description 11
- 230000005284 excitation Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000000243 photosynthetic effect Effects 0.000 description 3
- 229920006375 polyphtalamide Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 206010011906 Death Diseases 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 208000003351 Melanosis Diseases 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 210000003484 anatomy Anatomy 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of full spectrum white-light LED devices, the bracket is aluminium oxide ceramics bracket, and bracket front middle position is glue application region, and the positive positive and negative electrode of bracket is silver-plated, golden or aluminium electrode, the chip is near ultraviolet LED chip, and chip is directly fixed on bracket glue application region surface；The fluorescent powder is reddish yellow indigo plant three-color phosphor, and the positive and negative anodes of the LED chip are connect with the positive positive and negative electrode of bracket using spot welding mode, and solder joint is entirely covered in the positive positive and negative electrode surface of bracket.The solder joint formed by gold thread or alloy wire is completely covered by after chip bonding wire, the low cost of bracket production is maintained while eliminating silver coating blackening effect.In actual test, traditional copper silver-coated electrode injection molding support and the general commercially available silver-plated aluminium oxide ceramics bracket of large area are compared, improves the reliability of packaging (service life) to 50000h by 1000h while ensure that same light efficiency.
Description
Technical field
The present invention relates to LED technology fields, more particularly to a kind of near ultraviolet or purple light excited full spectrum adopting surface mounted LED
Device.
Background technique
Along with the development of LED industry and the continuous expansion of application field, especially photo illumination in recent years, detection is illuminated,
While introducing LED light source, for the characteristics of luminescence of LED, more stringent requirements are proposed in the illuminations such as lighting for medical use field.
Wherein, LED luminescent spectrum range is expanded into for one of main improvement direction, and such product is in the industry with full-spectrum LED
Name.The main direction of development of such white light LEDs is to excite redgreenblue using 380nm-420nm near ultraviolet chip at this stage
Fluorescent powder.The light emitting species of the existing mature blue chip excitation red green fluorescent powder of which comparison, in having supplied spectrum
While near ultraviolet ingredient, the spectrum of 470nm-520nm lacks the supplement of also available blue colour fluorescent powder spectrum, in colour rendering
Aspect efficiently solves in conventional blu-ray excitation LED light source colour rendering index, and R9 and R12 are difficult to the problem of improving simultaneously.
However, existing encapsulating material can not expire in the practical application of the full spectrum white-light LED scheme of near ultraviolet excitation
The reliability requirement of sufficient LED device.Wherein, traditional adopting surface mounted LED electrode and heat sink use copper silver coating material, and pass through
It is molded PPA (polyphthalamide, abbreviation PPA used below), PCT (phthalic acid 1,4-CHDM ester) or EMC
Materials such as (epoxy resin injected molded compound, abbreviation EMC used below) form intact stent.It is being applied near ultraviolet excitation
In the scheme of full spectrum white-light LED, due to the black light of 380nm-420nm will lead to silver coating melanism (silver migration) and
The yellow of injected plastics material, so that reflectivity reduces.The type LED component actual life is usually less than 3000h, and (industry provides light
70% of flux output lower than initial stage is end-of-life).To solve this problem, exist on the market and replace plating using gold-plated
Silver, and the products scheme using white reflective glue covering silver coating.However, the reflectivity due to Gold plated Layer is low, lead to not
High photosynthetic efficiency (generally use Gold plated Layer will lead to light efficiency halve) is taken into account while guaranteeing product reliability.On the other hand, due to
The paint-on technique of white reflective glue is still immature, can not effectively cover silver coating and be decayed with suppression device.
Summary of the invention
The object of the present invention is to provide a kind of full spectrum white-light LED devices for meeting near ultraviolet excitation.Rack body is adopted
With the aluminium oxide ceramics material of high reflectance, device high photosynthetic efficiency has been taken into account while guaranteeing material UV resistant, high thermal conductivity
Characteristic, electrode are formed using traditional silver plating process, the minimum area of bonding wire are only exposed in the positive dispensing region that shines, in core
The solder joint formed by gold thread or alloy wire is completely covered by after piece bonding wire, is maintained while eliminating silver coating blackening effect
The low cost of bracket production.Electrode surface material is not limited to silver, and gold and aluminium can also be used.
The present invention provides following scheme:
A kind of full spectrum white-light LED device, including bracket, electrode, heat sink, chip and fluorescent powder, the electrode include position
It is heat sink to be located at cradle back, it is characterised in that: described in the positive positive and negative electrode of bracket and positioned at the positive and negative electrode of cradle back
Bracket is aluminium oxide ceramics bracket, and bracket front middle position is glue application region, and the positive positive and negative electrode of bracket is silver-plated, golden
Or aluminium electrode, the chip are near ultraviolet LED chip, chip is directly fixed on bracket glue application region surface；The LED chip is just
Cathode is connect with the positive positive and negative electrode of bracket using spot welding mode, and solder joint is entirely covered in the positive positive and negative electrode table of bracket
Face, the fluorescent powder are reddish yellow indigo plant three-color phosphor, and the fluorescent powder is covered in and chip surface and is extended in whole by gluing
A glue application region.
The positive single electrode area of bracket is limited to 0.000009mm2-0.25mm2Between, and the widest part with it is most narrow
Place's size ratio is defined between 1-1.5.
The electrode can be used silver-plated or heavy silver-colored mode and be formed, and electrode surface material is silver, gold or aluminium.
The positive positive and negative electrode of the bracket and the positive and negative electrode of cradle back pass through via hole and realize conducting.
The bracket is surface mount type LED support, and chip is rectangular.
The chip is fixed on glue application region by crystal-bonding adhesive.
The positive positive and negative electrode of bracket is located at dispensing domain.
The heat sink middle position positioned at cradle back, the positive and negative electrode at the back side are located at heat sink two sides.
The near ultraviolet LED chip is wavelength 380nm-420nm near ultraviolet chip.
The red fluorescence powder composition formula are as follows: CaAlSi (ON)3: Eu, Emission Spectrum Peals wavelength is in 620-650nm, partly
Peak width is in 105-135nm；
Green emitting phosphor composition formula are as follows: SiAlON:Eu, Emission Spectrum Peals wavelength is in 530-560nnm, and half-peak breadth is in 40-
70nm；
Blue colour fluorescent powder composition formula are as follows: (Sr, Ba)10(PO4)6Cl2: Eu, Emission Spectrum Peals wavelength in 455-485nnm,
Half-peak breadth is in 60-90nm.
The present invention uses high thermal conductivity, and the alumina material of high reflectance, in bracket front, there is no as the prior art
Its surface is entirely plated into silver layer, and only the area on the outside of glue application region there are positive and negative electrode this micro-locality be it is silver-plated,
Gold or aluminium layer, and when with LED chip spot welding, cover solder joint electrode surface entirely without exposed, it is silver-plated eliminating
The low cost of bracket production is maintained while layer blackening effect.
To meet bonding wire minimum area, (actual service conditions according to the present invention, single electrode area are limited to
0.000009mm2-0.25mm2Between, and the widest part and most narrow place's size ratio are defined between 1-1.5), before electrode size meets
Qualifications are stated, and shape is unlimited.
The present invention has the advantages that
1. by using the oxidation aluminium material that physics, chemical property are stable, and passing through the silver coating in dispensing (luminous) region
Not exposed design effectively improves bracket for the tolerance of 380nm-420nm black light, and being applied to, such full spectrum is white
Highest can realize the high life of 50000h or more in the encapsulation of light LED device.
2. the material in dispensing (luminous) region is the alumina material of high reflectance, rack body keeps thermal conductivity simultaneously,
Packaging can realize the high photosynthetic efficiency same with conventional stent.
3. white LED device made by the present invention, color temperature uniformity is good, no hot spot.
4. bracket of the present invention is suitable for Vacuum Package simultaneously, it is not limited only near ultraviolet excitated white light LED part, dark purple
Good using effect can be obtained in outer package, high power white light or glory encapsulation.
Detailed description of the invention
Rack arrangement main view Fig. 1 of the invention,
Rack arrangement rearview Fig. 2 of the invention,
Device main view Fig. 3 of the invention,
Device main sectional view Fig. 4 of the invention,
The spectrogram of 1 packaging of Fig. 5 embodiment of the present invention,
Fig. 6 embodiment of the present invention 1, the present invention and traditional copper it is silver-plated/PCT bracket production full spectrum white-light LED device exist
Aging characteristics compare under high temperature and humidity (85 DEG C of environment temperature, relative humidity 85%) environment,
Fig. 7 embodiment of the present invention 1, as a comparison object using traditional copper it is silver-plated/PCT bracket production full spectrum white-light
Internal anatomy of the LED component under high temperature and humidity (85 DEG C of environment temperature, relative humidity 85%) environment after aging 1000h,
The spectrogram of 2 packaging of Fig. 8 embodiment of the present invention,
Fig. 9 embodiment of the present invention 2, the full spectrum white-light of the present invention and the silver-plated aluminium oxide ceramics bracket production of traditional large area
LED component aging characteristics under high temperature and humidity (85 DEG C of environment temperature, relative humidity 85%) environment compare.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawing and specific implementation
Invention is further described in detail for mode:
As shown in Figure 1, 2, support schematic diagram of the present invention, stent size 3.5mm*3.5mm, wherein glue application region 1 having a size of
2.4mm*2,4mm, front have positive and negative electrode 2 having a size of 0.45mm*0.45mm, are located at glue application region two diagonally, the back side is equipped with just
Negative electrode 3 is connected by via hole and front electrode 2；There are also heat sink 4, positive and negative electrode 3 is located at heat sink 4 two sides in back side center.
Fig. 3,4 are shaping device of the invention, and the near ultraviolet LED chip 5 is directly fixed on 8 points of bracket by crystal-bonding adhesive
The surface Jiao Qu；The positive and negative anodes of the near ultraviolet LED chip 5 are connect with the positive positive and negative electrode of bracket using spot welding mode, solder joint
6 are entirely covered in the positive positive and negative electrode surface of bracket.Reddish yellow indigo plant three-color phosphor 7 is covered in by glue sticking and near ultraviolet
The surface of LED chip 5 is simultaneously extended in entire glue application region.
Embodiment 1:
Device packaging technology is as follows:
1, LED chip: being fixed on the glue application region 1 of bracket 8 using common crystal-bonding adhesive by die bond, and the present embodiment selects glow peak
Value wavelength is located at the near ultraviolet LED chip 5 of 405nm.
2, spot welding: the front positive electricity cathode 2 of the positive and negative anodes of LED chip 5 and bracket is separately connected by gold thread, spot welding shape
At access, solder joint 6 entirely covers positive electricity cathode 2.
3, dispensing: the complex colloid containing RGB color fluorescent powder 7 is allotted by a certain percentage and is stirred evenly, after vacuum defoamation
It clicks and enters on the chip of glue application region 1.
Red fluorescence powder composition formula are as follows: CaAlSi (ON)3: Eu, Emission Spectrum Peals wavelength exist in 620-650nm, half-peak breadth
105-135nm；
Green emitting phosphor composition formula are as follows: SiAlON:Eu, Emission Spectrum Peals wavelength is in 530-560nnm, and half-peak breadth is in 40-
70nm；
Blue colour fluorescent powder composition formula are as follows: (Sr, Ba)10(PO4)6Cl2: Eu, Emission Spectrum Peals wavelength in 455-485nnm,
Half-peak breadth is in 60-90nm.
4, solidify: the product after dispensing is solidified by high temperature roaster according to preset temperature curve.
LED component luminescent spectrum is encapsulated as shown in figure 5, light emission color temperature is cool white 5600K, light efficiency 90lm/W.It is old to do
Change comparison, is packaged with above-mentioned same process using commercially available 5730 model copper silver-coated electrode/PCT material bracket, colour temperature is all
5600K, light efficiency 91lm/W.
The two is placed in ageing oven lights aging simultaneously, ageing environment be set as hot and humid environment (85 DEG C of environment temperature,
Relative humidity 85%).Through burn-in test, the luminous flux sustainment rate comparison of the two is as shown in Figure 6.The LED made of the present invention
The output light flux of device is stablized, and calculates according to test result, and the service life is close to 50000h.
Traditional copper silver-coated electrode/PCT material bracket sample luminous flux sustainment rate in 1000h is lower than 70%, i.e., the service life is only
For 1000h.As shown in fig. 7, can obviously observe that the blackening of bracket silver coating and PCT material are yellow after fluorescent glue is cast aside
Change.
Embodiment 2
With the technique of embodiment 1, fluorescent powder proportion is adjusted, bracket of the present invention and general commercial alumina ceramics bracket are used
(silver coating is full of light emitting region) is packaged into warm white 3200K full-spectrum LED device, and emission spectrum is as shown in Figure 8.The two light efficiency is equal
For 80lm/W.
The two is the same as example 1 in lighting aging, aging condition in ageing oven.Aging characteristics pair as shown in Figure 9
Than the present invention is using silver coating design is hidden, and packaging reliability is good, calculates according to test result, and the service life is close
50000h。
General commercial alumina ceramics bracket is plated due to the problem of equally existing silver coating blackening, aging characteristics and traditional copper
Silver/PCT bracket production sample is suitable.
It will be apparent to those skilled in the art that can make various other according to the above description of the technical scheme and ideas
Corresponding change and deformation, and all these changes and deformation all should belong to the protection scope of the claims in the present invention
Within.
Claims (10)
1. a kind of full spectrum white-light LED device, including bracket, electrode, heat sink, chip and fluorescent powder, the electrode includes being located at
The positive positive and negative electrode of bracket and the positive and negative electrode positioned at cradle back, it is heat sink to be located at cradle back, it is characterised in that: the branch
Frame is aluminium oxide ceramics bracket, and bracket front middle position is glue application region, and the positive positive and negative electrode of bracket is silver-plated, Jin Huo
Aluminium electrode, the chip are near ultraviolet LED chip, and chip is directly fixed on bracket glue application region surface；The LED chip it is positive and negative
Pole is connect with the positive positive and negative electrode of bracket using spot welding mode, and solder joint is entirely covered in the positive positive and negative electrode surface of bracket,
The fluorescent powder is reddish yellow indigo plant three-color phosphor, and the fluorescent powder is covered in by gluing and chip surface and is extended in entire point
Jiao Qu.
2. full spectrum white-light LED device according to claim 1, it is characterised in that: the positive single electrode of bracket
Area is limited to 0.000009mm2-0.25mm2Between, and the widest part and most narrow place's size ratio are 1-1.5.
3. full spectrum white-light LED device according to claim 1, it is characterised in that: the positive positive and negative electrode of bracket
It is formed using silver-plated or heavy silver-colored mode, and electrode surface material is silver, gold or aluminium.
4. full spectrum white-light LED device according to claim 1, it is characterised in that: the positive positive and negative electrode of bracket
It is realized and is connected by via hole with the positive and negative electrode of cradle back.
5. full spectrum white-light LED device according to claim 1, it is characterised in that: the bracket is adopting surface mounted LED branch
Frame, chip are rectangular.
6. full spectrum white-light LED device according to claim 1, it is characterised in that: the chip is fixed by crystal-bonding adhesive
In glue application region.
7. full spectrum white-light LED device according to claim 1, it is characterised in that: the positive positive and negative electrode of bracket
Positioned at dispensing region.
8. full spectrum white-light LED device according to claim 1, it is characterised in that: described heat sink positioned at cradle back
Middle position bracket, the positive and negative electrode at the back side are located at heat sink two sides.
9. full spectrum white-light LED device according to claim 1, it is characterised in that: the near ultraviolet LED chip is wavelength
380nm-420nm near ultraviolet chip.
10. full spectrum white-light LED device according to claim 9, it is characterised in that: the red fluorescence powder composition formula
Are as follows: CaAlSi (ON)3: Eu, Emission Spectrum Peals wavelength is in 620-650nm, and half-peak breadth is in 105-135nm；
Green emitting phosphor composition formula are as follows: SiAlON:Eu, Emission Spectrum Peals wavelength is in 530-560nnm, and half-peak breadth is in 40-
70nm；
Blue colour fluorescent powder composition formula are as follows: (Sr, Ba)10(PO4)6Cl2: Eu, Emission Spectrum Peals wavelength is in 455-485nnm, half-peak
Width is in 60-90nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811386030.5A CN109346590B (en) | 2018-11-20 | 2018-11-20 | Full spectrum white light LED device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811386030.5A CN109346590B (en) | 2018-11-20 | 2018-11-20 | Full spectrum white light LED device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109346590A true CN109346590A (en) | 2019-02-15 |
| CN109346590B CN109346590B (en) | 2023-10-03 |
Family
ID=65316711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811386030.5A Active CN109346590B (en) | 2018-11-20 | 2018-11-20 | Full spectrum white light LED device |
Country Status (1)
| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110896124A (en) * | 2019-12-05 | 2020-03-20 | 厦门多彩光电子科技有限公司 | Method for producing silica gel lens purple light full spectrum lamp bead |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001284785A (en) * | 2000-03-29 | 2001-10-12 | Toshiba Corp | Electric or electronic component and assembly |
| JP2005057117A (en) * | 2003-08-06 | 2005-03-03 | Matsushita Electric Ind Co Ltd | Soldering method, joining structure, and electric/electronic component |
| US20090026480A1 (en) * | 2007-07-27 | 2009-01-29 | Nichia Corporation | Light emitting device and method of manufacturing the same |
| CN201412704Y (en) * | 2009-03-10 | 2010-02-24 | 广州南科集成电子有限公司 | Light source of integrated LED chip |
| JP2014107418A (en) * | 2012-11-28 | 2014-06-09 | Sanken Electric Co Ltd | Semiconductor device and manufacturing method of the same |
-
2018
- 2018-11-20 CN CN201811386030.5A patent/CN109346590B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001284785A (en) * | 2000-03-29 | 2001-10-12 | Toshiba Corp | Electric or electronic component and assembly |
| JP2005057117A (en) * | 2003-08-06 | 2005-03-03 | Matsushita Electric Ind Co Ltd | Soldering method, joining structure, and electric/electronic component |
| US20090026480A1 (en) * | 2007-07-27 | 2009-01-29 | Nichia Corporation | Light emitting device and method of manufacturing the same |
| CN201412704Y (en) * | 2009-03-10 | 2010-02-24 | 广州南科集成电子有限公司 | Light source of integrated LED chip |
| JP2014107418A (en) * | 2012-11-28 | 2014-06-09 | Sanken Electric Co Ltd | Semiconductor device and manufacturing method of the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110896124A (en) * | 2019-12-05 | 2020-03-20 | 厦门多彩光电子科技有限公司 | Method for producing silica gel lens purple light full spectrum lamp bead |
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| Publication number | Publication date |
|---|---|
| CN109346590B (en) | 2023-10-03 |
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