CN109346450A - It is a kind of for cooling down the device and method of the semiconductor devices of downhole tool - Google Patents
It is a kind of for cooling down the device and method of the semiconductor devices of downhole tool Download PDFInfo
- Publication number
- CN109346450A CN109346450A CN201811477360.5A CN201811477360A CN109346450A CN 109346450 A CN109346450 A CN 109346450A CN 201811477360 A CN201811477360 A CN 201811477360A CN 109346450 A CN109346450 A CN 109346450A
- Authority
- CN
- China
- Prior art keywords
- semiconductor devices
- downhole tool
- cooling
- radiator
- cooling down
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
Abstract
The invention discloses a kind of for cooling down the device and method of the semiconductor devices of downhole tool, the device of the semiconductor devices for cooling down downhole tool includes semiconductor devices, active cooling layer and radiator, the semiconductor devices is set to active cooling layer upper surface, the lower end surface of active cooling layer is contacted with radiator, and the active cooling layer is thin film thermoelectric cooling layer;In use, the semiconductor devices of downhole tool is transported to down well placement;Heat is absorbed from the semiconductor devices of downhole tool using thin film thermoelectric cooling layer;Heat is pumped from thin film thermoelectric cooling layer using the radiator for being connected to thin film thermoelectric cooling layer.The present invention includes that downhole tool and logging equipment is made periodically to work, so that cooling system maintains the normal work of downhole tool and logging equipment with the smallest cost.
Description
Technical field
The present invention relates to downhole tool field, especially a kind of device for cooling down the semiconductor devices of downhole tool and
Method.
Background technique
The drilling depth of oil and natural gas well reaches hundreds and thousands of rice.Well logging and drilling equipment generally comprise various sensings
Device, instrument and meter and control device, to execute any possible underground work.These underground work may include being surveyed
Well, fluid analysis and monitoring of tools.
Due to vibration, irritation chemical substance and temperature, subsurface environment is to the fortune for maintaining downhole tool in underground depths
Row constitutes very big challenge.Wherein temperature brings great test to the application of downhole tool, and downhole temperature is likely to be breached
It is 392 °F (200 DEG C) or higher, make it difficult to run sensitive electronic component in subsurface environment.Space in downhole carrier is logical
Often it is limited to several centimetres to tens centimetres of diameter.Cooling system will usually consume very high-power and occupy the preciousness in tool carrier
Space, and increase additional fault point in systems.
Manufacture the most challenging aspect of downhole tool first is that high temperature produces the performance of the electronic equipment based on semiconductor
Raw adverse effect.It is some that cooling semi-conductor electronic device is needed to include and be not limited to central processing unit (CPUs), operation
Amplifier, digital analog converter (DAC), analog-digital converter (ADC), the professional programmable gate array FPGA in scene etc..Photodiode,
Charge-coupled device (CCD) and other optical detectors, metal-oxide semiconductor (MOS) (MOS), metal oxide semiconductor field-effect
The sensors such as transistor (MOSFET) and ion-sensitive field effect transistor (IsFET) chemical sensor are only half that underground uses
Some examples of conductor sensor, may be by the adverse effect of high temperature.Electromagnetic launcher, sometimes referred to as light source, including swash
Optical diode, light emitting diode (LED), superluminescense LED etc., it is also possible to lose performance characteristics at high temperature.High temperature will lead to drift
It moves, nonlinear response, response is reduced, or even these devices are entirely ineffective at high temperature.In general, equipment can be restored to room temperature
Its original performance of Shi Huifu, but they can be due to exposing at such high temperatures by permanent damage sometimes.
It is therefore desirable to be cooled down to semi-conductor electronic device.
Summary of the invention
The invention aims to solve deficiency present in prior art problem, provide a kind of for cooling down downhole tool
Semiconductor devices device and method.
In order to achieve the above objectives, the present invention is implemented according to following technical scheme:
It is a kind of for cooling down the device of the semiconductor devices of downhole tool, it is described for cooling down the semiconductor device of downhole tool
The device of part includes semiconductor devices, active cooling layer and radiator, and the semiconductor devices is set to active cooling layer upper end
The lower end surface in face, active cooling layer is contacted with radiator, and the active cooling layer is thin film thermoelectric cooling layer.
Preferably, the area of the upper surface of the radiator is greater than the area of thin film thermoelectric cooling layer lower surface.
Preferably, the thin film thermoelectric cooling layer includes the superlattice structure of the thermoelectric material layer of multiple alternate 5nm thickness,
The thermoelectric material layer of alternate 5nm thickness is bismuth battery and antimony telluride.
Preferably, the radiator is made of a highly heat conductive material.
Preferably, the highly heat-conductive material is diamond or aluminium nitride.
Further, the device of the semiconductor devices for cooling down downhole tool further includes that progress heat is connect with radiator
The heat dissipation equipment of exchange.
Preferably, the heat dissipation equipment is the radiator that is electrically insulated made of aluminium oxide, aluminium nitride or combinations thereof.
Preferably, the heat dissipation equipment is conductive heat sink made of copper, aluminium, silicon or combinations thereof.
Preferably, the heat dissipation equipment is the hydraulically full heat pipe contacted with radiator.
In addition, the present invention also provides a kind of method of the semiconductor devices of cooling downhole tool, using above-mentioned for cooling down
The device of the semiconductor devices of downhole tool, the specific steps are as follows:
Step1, the semiconductor devices of downhole tool is transported to down well placement;
Step2, heat is absorbed from the semiconductor devices of downhole tool using thin film thermoelectric cooling layer;
Step3, heat is pumped from thin film thermoelectric cooling layer using the radiator for being connected to thin film thermoelectric cooling layer.
The principle of the present invention are as follows: semiconductor devices is absorbed by thin film thermoelectric cooling layer and generates heat, thin film thermoelectric is cooling
It is transmitted to radiator after layer absorption heat to distribute heat, to achieve the purpose that cooling semiconductor devices.
Compared with prior art, the invention has the following advantages:
1, of the invention small in size, light-weight, it is easily installed on drilling tool.Use the cooling size of thin film thermoelectric
It is small, volume can be made less than 1cm3Refrigerator;Light-weight, miniature refrigerator can accomplish only tens grams even several grams;
It is noiseless in work without mechanical driving part, no liquid, gaseous working medium, thus it is free from environmental pollution;Cooling parameters are not by sky
Between direction and gravity influence, under the conditions of big mechanical overload, can normally work.
2, cooling velocity of the invention is fast, long service life, and easily controllable.It, can by adjusting the size of operating current
Facilitate adjusting cooling rate.
3, refrigeration small power consumption of the invention.Downhole tool and logging equipment periodically work, so that cooling system is with most
Small cost maintains the normal work of downhole tool and logging equipment.
4, the heat that the device of the invention itself generates is small.Because downhole tool and logging equipment periodically work, cold
But system, downhole tool and logging equipment small power consumption, the heat of generation is also smaller, alleviates the burden of Cold cutting systems.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of embodiment of the invention.
Fig. 2 is the structural schematic diagram of another embodiment of the invention.
Fig. 3 is the structural schematic diagram of the third embodiment of the invention.
Fig. 4 is that the underground of the downhole tool of the device comprising the semiconductor devices for cooling down downhole tool of the invention is surveyed
Well example.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention more comprehensible, below in conjunction with drawings and examples, to this
Invention is described in further detail.Described herein the specific embodiments are only for explaining the present invention, is not used to limit
Invention.
Embodiment 1
As shown in Figure 1, the device of the semiconductor devices for cooling down downhole tool of the present embodiment comprising can be used for
The semiconductor devices 102 operated in subsurface environment.Semiconductor devices 102 can be set on active cooling layer 104, and actively
Cooling layer 104 is arranged on radiator 106.Certainly, in order to preferably disperse the heat in radiator 106, radiator 106 can
To be arranged on heat dissipation equipment 108.In the present embodiment, heat dissipation equipment 108 can be high capacity thermal capacitance radiator, thermal capacity foot
It is minimized with increasing its temperature when tube core is cooled, so that allowing tube core to reach its minimum possible temperature makes thermoelectric-cooled
Device reaches maximal efficiency.For needing the cooling device to improve its performance but not damaged by borehole temperature, due to film heat
The high fever pump capacity of electric cooler, interval but to be cooled fast to required temperature be possible.So low working cycles can make
Cooling required gross energy reduces manyfold, this is for battery powered downhole tool or any underground work with limited power
Have particularly useful.
Semiconductor devices 102 in the present embodiment may include CPU, amplifier, DAC, ADC, and one or more FPGA are all
Such as the sensor of photodiode, ccd array and other photodetectors.Mold 100 may include MOS, MOSFET, IsFET and
Other devices and sensor.Mold 100 can also include electromagnetic launcher, such as laser diode, LED, superluminescense LED, with
And other semiconductor light sources and electromagnetic energy emitter.
In the present embodiment, active cooling layer 104, which can be, provides any suitable of active cooling for semiconductor devices 102
Layer material.In the present embodiment, active cooling layer 104 may include thermoelectric-cooled material.Suitable thermoelectric material can be based on non-
Often thin film, can essentially directly contact with semiconductor devices 102 to be cooled down, with realize maximum heat transmitting and
It is the smallest excessive to be heated or cooled.Thin film thermoelectric cooling layer described in the present embodiment refers to be added using one or more micromechanics
The active cooling layer that work and/or depositing operation are formed, is used to form miniature device, such as semiconductor chip.Thin film thermoelectric materials
Can shed the heats of up to 700 watts/square centimeter, can have the coefficient of performance more than 1 unit (used in every watt of COP
The wattage of heat pump), and can be improved efficiency by increasing borehole temperature within the scope of wellbore temperatures.Thermoelectric material can be with
The superlattice structure of thermoelectric material layer including about 1,000 alternate 5nm thickness, such as alternate bismuth battery and antimony telluride.?
In the present embodiment, active cooling layer 104 can have quality factor (ZT), as the temperature in oil field drilling temperature range increases
And moderately improve, and can have about 1 or the higher coefficient of performance.The quality factor of thermoelectricity and its coefficient of performance are positively correlated.
In one or more embodiments, COP can be in the range of about 1 to 4.In one or more embodiments, COP can be with
In the range of about 1 to 8.
It is directly contacted as shown in Figure 1, active cooling layer 104 may be positioned so that with semiconductor devices 102.Active cooling layer
104 further directly contact with radiator 106.In the present embodiment, radiator 106 can be made of a highly heat conductive material, such as be had
There is the diamond of the thermal conductivity of about 630W/mK.Certainly, radiator 106 can also be made of a highly heat conductive material, such as with about
The aluminium nitride of the thermal conductivity of 180W/mK;Radiator 106 has surface, which has than semiconductor devices 102 or active cooling
The much bigger area of 104 surface region of layer.
At work, radiator 106 by any heat removed from semiconductor devices 102 and active cooling layer 104 and by its
It is dispersed on the surface of large area and volume heat dissipation equipment 108.In the present embodiment, heat dissipation equipment can be electrically insulating material,
Or heat dissipation equipment can be conduction.In one or more embodiments, heat dissipation equipment can be by with high volumetric heat capacity
Material is made, which is the mass density of material therefor and the product of specific heat.For example, electrical isolation radiator can be used
Aluminium oxide (the Al that volumetric heat capacity amount is about 3.37E+06Jm-3K-12O3) or volumetric heat capacity amount be about 2.59E+06Jm-3K-1
Aluminium nitride (AlN) is made.For conductive heat sink, the copper or volume heat that volumetric heat capacity is 3.45E+06Jm-3K-1 can be used
Hold the silicon that the aluminium for being 2.42E+06Jm-3K-1 or volumetric heat capacity are 1.63E+06Jm-3K-1.Alternatively, or in addition to above-mentioned it dissipates
Except hot device, heat dissipation equipment 108 may include the hydraulically full heat pipe contacted with radiator 106, come from thermoelectric cold with transmitting
But the heat of device.
Embodiment 2
Referring to Fig. 2, the device of the semiconductor devices for cooling down downhole tool of the present embodiment, including setting is actively cold
But the semiconductor devices on layer 104, and active cooling layer 104 is arranged on radiator 106.Certainly, in order to will preferably dissipate
Heat in hot device 106 disperses, and radiator 106 can be set on heat dissipation equipment 108.The wherein semiconductor devices of the present embodiment
For electromagnetic energy source 202, the device of the semiconductor devices for being used to cool down downhole tool of this implementation can be encapsulated comprising set
Set the electromagnetic energy source 202 in encapsulation 206.Electromagnetic energy source 202 in the example is the electromagnetic energy hair for emitting electromagnetic energy 204
Emitter, and encapsulating 206 includes the window 208 for allowing electromagnetic energy emitter 204 to emit from encapsulation 206, and encapsulation 206 may include
Pedestal 210, and pedestal 210 may include one or more holes 212, for receiving fastener to ensure electromagnetic energy source 200
To downhole tool carrier.One or more conductive lead wires 214 may be coupled to tube core and active cooling layer 104, and lead 214
Encapsulation 206 can be extended in outside, to provide electrical connection, provide power supply and the control of electromagnetic energy source 200.Then, it radiates
Equipment 108, which can according to need, is connected to pedestal 210 or Intermediate substrate.
Embodiment 3
As shown in figure 3, the device of the semiconductor devices for cooling down downhole tool of the present embodiment, including setting is actively
Semiconductor devices on cooling layer 104, and active cooling layer 104 is arranged on radiator 106.Certainly, in order to preferably will
Heat in radiator 106 disperses, and radiator 106 can be set on heat dissipation equipment 108.The wherein semiconductor device of the present embodiment
Part is the sensing element 302 of detector.Then the sensing element 302 of device, active cooling layer 104,106 He of radiator can be will test
Heat dissipation equipment 108 is arranged on the one or more substrates 312 for being suitable for that device is mounted in detector package 306.
Encapsulation 306 can also include window 308, for allowing electromagnetic energy to enter encapsulation 306 and being examined by detector 302
It surveys.Encapsulation may include pedestal 310 and one or more electrical leads 314, be mounted in downhole tool or carrier for that will encapsulate.
Application Example
Fig. 4 shows the non-limiting example of the logging equipment of several case study on implementation according to this content.Logging equipment quilt
It shows in the wellbore 402 for being arranged in and penetrating stratum 404, for measuring the property on stratum 404.Drilling 402 is normally filled with drilling well
Liquid is to prevent formation fluid from flowing into.
A string of logging tools 406 are dropped in wellbore 402 by cable 408.Cable 408 can be from winch or roller
410 are wound and release.
Tool string 406 can be electrically connected to ground by the optical fiber (not separately shown) of a part of formation cable 408 and set
Standby 412.Ground installation 412 may include a part of telemetry system 414, for control signal and data to be transmitted to tool string
406 and computer 416.Computer can also include data logger 418, for recording the measurement carried out by device and being sent out
It is sent to ground installation 412.
One or more well logging apparatus 420 form a part of tool tubular column 406.Tool tubular column 406 preferably passes through top
Portion centralizer 422a and the bottom centralizer 412b of tool tubular column 406 is attached at axially spaced position in wellbore 402
It is interior placed in the middle.
Centralizer 422a, 422b can be type known in the art, such as semielliptic spring.
Circuit for operating logging tool 420 can be located in line 406 and be located in electronics compartment 424.Circuit is also
Tool 420 can be connected to by connector 426.In several case study on implementation, logging tool 420 be may include based on semiconductor
Device, such as any device shown in described herein and Fig. 1 to Fig. 3.
It now can be in view of several operation examples of description described above.In boring bar tool, it is often desirable that will be based on partly leading
The device of body is maintained in specific temperature or selected temperature range.However, borehole temperature is higher, device is cooled to required temperature
It is more difficult.It is eventually more than the maximum rating that typical external thermoelectric (al) cooler or cooler heap may provide.Moreover, even
Power needed for continuous maintenance maximum rating can exceed that the electrical power that downhole tool allows.
When downhole temperature is more than ideal working temperature, active cooling layer 104 as described above can be used for cooling down semiconductor
Device 102, the polarity of the D/C voltage by simply inverting application, when wellbore temperatures are lower than its ideal working temperature, it can
For heating device.
In several non-limiting examples, the very fast cooling rate of active cooling layer 104 allows periodically low duty
Than work, a large amount of electric power continuously will not be drawn from downhole tool.By using heat dissipation equipment 108 in such rapid cooling
Period can maintain big rated value, and wherein radiator 108 dissipates heat, and wherein heat dissipation equipment 108 has sufficiently high thermal capacitance
Amount, so that it only undergoes small temperature rise during movable operation.Cooling layer 104.Because semiconductor devices 102 is relatively small
(may be that 1mm × 1mm and thickness are less than 1mm), it is possible to heat dissipation equipment temperature be kept not show using passive way
Be higher than normal environment downhole temperature.In one or more embodiments, passive heat dissipation includes using as described above and in Fig. 1-3
Shown in heat spreader structures.In one or more case study on implementation, passive radiator method may include using with radiator
The hydraulically full heat pipes of 106 contacts transmit the heat dissipated by thermoelectric (al) cooler 104.
The limitation that technical solution of the present invention is not limited to the above specific embodiments, it is all to do according to the technique and scheme of the present invention
Technology deformation out, falls within the scope of protection of the present invention.
Claims (10)
1. a kind of for cooling down the device of the semiconductor devices of downhole tool, it is characterised in that: described for cooling down downhole tool
The device of semiconductor devices include semiconductor devices, active cooling layer and radiator, the semiconductor devices is set to actively
The lower end surface of cooling layer upper surface, active cooling layer is contacted with radiator, and the active cooling layer is thin film thermoelectric cooling layer.
2. according to claim 1 for cooling down the device of the semiconductor devices of downhole tool, it is characterised in that: described to dissipate
The area of the upper surface of hot device is greater than the area of thin film thermoelectric cooling layer lower surface.
3. according to claim 1 for cooling down the device of the semiconductor devices of downhole tool, it is characterised in that: described thin
Film thermoelectric-cooled layer includes the superlattice structure of the thermoelectric material layer of multiple alternate 5nm thickness, the thermoelectric material of alternate 5nm thickness
Layer is bismuth battery and antimony telluride.
4. according to claim 1 for cooling down the device of the semiconductor devices of downhole tool, it is characterised in that: described to dissipate
Hot device is made of a highly heat conductive material.
5. according to claim 4 for cooling down the device of the semiconductor devices of downhole tool, it is characterised in that: the height
Heat Conduction Material is diamond or aluminium nitride.
6. the device of -5 any semiconductor devices for cooling down downhole tool according to claim 1, it is characterised in that:
The device of the semiconductor devices for cooling down downhole tool further includes that the heat dissipation equipment for carrying out heat exchange is connect with radiator.
7. according to claim 6 for cooling down the device of the semiconductor devices of downhole tool, it is characterised in that: described to dissipate
Hot equipment is the radiator that is electrically insulated made of aluminium oxide, aluminium nitride or combinations thereof.
8. according to claim 6 for cooling down the device of the semiconductor devices of downhole tool, it is characterised in that: described to dissipate
Hot equipment is conductive heat sink made of copper, aluminium, silicon or combinations thereof.
9. according to claim 6 for cooling down the device of the semiconductor devices of downhole tool, it is characterised in that: described to dissipate
Hot equipment is the hydraulically full heat pipe contacted with radiator.
10. a kind of method of the semiconductor devices of cooling downhole tool, it is characterised in that: using such as any institute of claim 11-9
State the device of the semiconductor devices for cooling down downhole tool, the specific steps are as follows:
Step1, the semiconductor devices of downhole tool is transported to down well placement;
Step2, heat is absorbed from the semiconductor devices of downhole tool using thin film thermoelectric cooling layer;
Step3, heat is pumped from thin film thermoelectric cooling layer using the radiator for being connected to thin film thermoelectric cooling layer.
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CN201811477360.5A CN109346450A (en) | 2018-12-05 | 2018-12-05 | It is a kind of for cooling down the device and method of the semiconductor devices of downhole tool |
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CN201811477360.5A CN109346450A (en) | 2018-12-05 | 2018-12-05 | It is a kind of for cooling down the device and method of the semiconductor devices of downhole tool |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113550737A (en) * | 2020-04-07 | 2021-10-26 | 新奥科技发展有限公司 | Heat insulation cooling device, measurement while drilling device and drilling tool |
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CN201820753U (en) * | 2010-07-19 | 2011-05-04 | 福州华虹智能科技开发有限公司 | Multi-chip encapsulation module for electronic equipments under coal mine |
US20110272154A1 (en) * | 2010-05-05 | 2011-11-10 | Anmol Kaul | Dissipating heat from a downhole heat generating device |
CN103518033A (en) * | 2011-04-29 | 2014-01-15 | 韦尔泰克有限公司 | Downhole tool |
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CN101328801A (en) * | 2007-06-21 | 2008-12-24 | 普拉德研究及开发股份有限公司 | Apparatus and methods to dissipate heat in a downhole tool |
US20110272154A1 (en) * | 2010-05-05 | 2011-11-10 | Anmol Kaul | Dissipating heat from a downhole heat generating device |
CN201820753U (en) * | 2010-07-19 | 2011-05-04 | 福州华虹智能科技开发有限公司 | Multi-chip encapsulation module for electronic equipments under coal mine |
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Application publication date: 20190215 |