CN109326662B - 一种高转换效率的太阳能电池 - Google Patents

一种高转换效率的太阳能电池 Download PDF

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CN109326662B
CN109326662B CN201811229161.2A CN201811229161A CN109326662B CN 109326662 B CN109326662 B CN 109326662B CN 201811229161 A CN201811229161 A CN 201811229161A CN 109326662 B CN109326662 B CN 109326662B
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郭建廷
李方红
常嘉兴
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Abstract

本发明公开了一种高转换效率的太阳能电池，包括由上至下依次层叠设置的抗反射层、钙钛矿材料层、TiO2层、III‑V族太阳能电池和DBR层。本发明的高转换效率的太阳能电池在III‑V族太阳能电池的基础上利用抗反射层增加收光量、钙钛矿材料层吸收光能以及DBR层增加长波部分光的吸收，进一步提高了转换效率，在太阳能电池领域具有重要的应用前景。

Description

一种高转换效率的太阳能电池
技术领域
本发明涉及太阳能材料领域，尤其是涉及一种高转换效率的太阳能电池。
背景技术
太阳能电池能够将光能转换成电能，也称为光伏电池(Photovoltaic，PV)，其中III-V族太阳能电池因其具有较高的转换效率而备受关注。第一代硅太阳能电池中硅为间接带隙半导体，当电子从价带激发到导带时容易发生晶体动量的改变，而III-V族化合物为直接带隙半导体，不会发生晶体动量的改变，使得III-V族太阳能电池在微电子的应用上具有更优异的性能，此外III-V族化合物带隙宽，而且三元或四元的混合III-V族化合物如InGaP等更能使带隙的设计变化更大，从而使得III-V族太阳能电池具备高效率的性能。目前III-V族太阳能电池领域发展迅速且相关产品众多，然而人们还是期望在III-V族太阳能电池的基础上进一步提高转换效率。
发明内容
本发明所要解决的技术问题是提供高转换效率的太阳能电池，进一步提高了III-V族太阳能电池的转换效率，在太阳能电池领域具有重要的应用前景。
本发明所采取的技术方案是：
本发明提供一种高转换效率的太阳能电池，包括由上至下依次层叠设置的抗反射层、钙钛矿材料层、TiO2层、III-V族太阳能电池和DBR层。
优选地，所述抗反射层为仿生蛾眼结构。
优选地，所述抗反射层的材料为氮化硅、二氧化硅中的至少一种。
优选地，所述III-V族太阳能电池为多结太阳能电池。
进一步地，所述多结太阳能电池为三结太阳能电池，所述三结太阳能电池包括三个子电池，三个所述子电池的能隙由上至下依次递减。
更进一步地，所述三结太阳能电池的结构由上至下具体为依次层叠设置的InGaP层、通道层一、GaAs层、通道层二、GaInNAs层、通道层三和GaAs衬底。
进一步地，所述多结太阳能电池的结构由上至下具体为依次层叠设置的AlIn窗口层、InGaP发射层、InGaP基区层、AlGaInP背表面电场层、第一隧道结、InGaP窗口层、InGaAs发射层、InGaAs基区层、AlGaP背表面电场层、第二隧道结、InGaAs缓冲层、InGaP异质层、Ge基区层和Ge背表面电场层。
进一步地，所述多结太阳能电池的结构由上至下具体为依次层叠设置的p-AlGaAs窗口层、p-GaAs发射层、n-GaAs基区层；所述DBR层的下方还设置有n-GaAs衬底。
进一步地，所述多结太阳能电池的结构由上至下具体为依次层叠设置的覆盖层、窗口层、InGaAs n型发射层、InGaAs p型基区层、背表面电场层、隧道结、缓冲层、Ge n型扩散层、Ge p型衬底。
进一步地，所述多结太阳能电池的结构由上至下具体为依次层叠设置的n-AlInP窗口层、n-InGaP发射层、p-InGaP基区层、p-AlInP背表面电场层、p-AlGaAs/n-InGap隧道结、n-InGaP窗口层、n-InGaAs发射层、p-InGaAs基区层、p-InGaP背表面电场层、p-GaAs/n-GaAs隧道结、n-InGaAs缓冲层、InGaP层、n-Ge层、p-Ge层。
优选地，所述抗反射层上方还设置有聚光镜模组。
进一步地，所述聚光镜模组为菲涅尔透镜。
本发明的有益效果是：
本发明在III-V族太阳能电池的基础上增设了抗反射层、钙钛矿材料层、TiO2层和DBR(分布布拉格反射镜)层，其中抗反射层具有宽频谱响应及大收光角度等特性，能够增加太阳能电池单位面积的收光量，从而减少光因反射而造成的损失，钙钛矿材料层能够吸收较多的太阳光谱进入材料内，DBR结构能够提高长波部分的光在材料内部的反射和散射，从而增加光程，进而增加长波部分的吸收，本发明得到的太阳能电池在III-V族太阳能电池的基础上利用抗反射层增加收光量、钙钛矿材料层吸收光能以及DBR层增加长波部分光的吸收，进一步提高了转换效率，在太阳能电池领域具有重要的应用前景。
附图说明
图1为本发明高转换效率的太阳能电池的结构设计示意图；
图2为本发明具体示例高转换效率的太阳能电池一的结构图；
图3为本发明具体示例高转换效率的太阳能电池二的结构图；
图4为本发明具体示例高转换效率的太阳能电池三的结构图；
图5为本发明具体示例高转换效率的太阳能电池四的结构图；
图6为本发明具体示例高转换效率的太阳能电池五的结构图。
具体实施方式
以下将结合实施例对本发明的构思及产生的技术效果进行清楚、完整地描述，以充分地理解本发明的目的、特征和效果。显然，所描述的实施例只是本发明的一部分实施例，而不是全部实施例，基于本发明的实施例，本领域的技术人员在不付出创造性劳动的前提下所获得的其他实施例，均属于本发明保护的范围。
实施例1
参见图1，本发明提供一种高转换效率的太阳能电池，包括由上至下依次层叠设置的抗反射层、钙钛矿材料层、TiO2层、III-V族太阳能电池和DBR层。
传统上会使用介电质薄膜如氮化硅(SiNx)、二氧化硅(SiO2)等材料作为抗反射层，可以根据不同材料不同的折射系数决定其厚度为入射波波长的1/4λ的奇数倍产生破坏性干涉，以达到最好的抗反射效果，在一些优选的实施例中利用电子束显影、纳米压印以及纳米球微影术等方法将抗反射层材料制备成仿生蛾眼结构，例如专利CN102263144A中通过一步光刻和刻蚀工艺制备仿生蛾眼结构，以蛾眼状的纳米结构作为抗反射的表面可以提升各子电池的入光量达到最高的增益效果。钙钛矿材料层属于半导体，可选用如CH3NH3PbI3、CH3NH3PbBr3、CH3NH3PbCl3等材料，具有良好的吸光性能够吸收较多的太阳光谱进入材料内，利于提高光电转换效率。DBR(分布布拉格反射镜)层属于介电反射镜的一种，可以是由两种不同介电系数的材料交替排列组成如AlAs/GaAs，通过控制DBR层厚度和材料的折射系数，便能使不同反射层反射后的平面光波产生建设性干涉，从而提高反射率，进而提高光电转换效率。
本发明中使用的III-V族太阳能电池可以是单结或多结太阳能电池，以下结合几种具体使用的III-V族太阳能电池进行说明。
参见图2，图2提供了一种高转换效率的太阳能电池一，包括由上至下依次层叠设置的上接触电极、抗反射层、钙钛矿材料层、TiO2层、III-V族太阳能电池、DBR材料层和下接触电极，所述III-V族太阳能电池为三结太阳能电池，由上至下依次包括InGaP上电池、GaAs中电池、GaInNAs下电池和GaAs衬底，其中InGaP上电池包括InGaP层和通道层一，其能隙为1.9ev，GaAs中电池包括GaAs层和通道层二，其能隙为1.4ev，GaInNAs下电池包括GaInNAs层和通道层三，其能隙为1.0ev，三个所述子电池的能隙由上至下依次递减。
参见图3，图3提供了一种高转换效率的太阳能电池二，包括由上至下依次层叠设置的抗反射层、钙钛矿材料层、TiO2层、III-V族太阳能电池和DBR材料层，所述抗反射层上设置有接触电极一和接触电极二，所述III-V族太阳能电池由上至下依次包括InGaP上电池、第一隧道结、InGaAs中电池、第二隧道结和Ge下电池，其中InGaP上电池包括依次层叠的n+型AlInP窗口层、n型InGaP发射层、p型InGaP基区层和p+型AlGaInP背表面电场层，其能隙为1.86ev，InGaAs中电池包括依次层叠的n+型InGaP窗口层、n型InGaAs发射层、p型InGaAs基区层和p+型InGaP背表面电场层，其能隙为1.4ev，Ge下电池包括依次层叠设置的n型InGaAs缓冲层、n型InGaP异质层、n型Ge基区层和p型Ge背表面电场层，其能隙为0.65ev，子电池的能隙由上至下依次递减。
参见图4，图4提供了一种高转换效率的太阳能电池三，包括由上至下依次层叠设置的抗反射层、钙钛矿材料层、TiO2层、III-V族太阳能电池、DBR材料层和n型GaAs衬底，所述抗反射层上设置有接触电极一和接触电极二，所述DBR材料层的材料为12对AlAs/GaAs，III-V族太阳能电池为GaAs单结电池，所述GaAs单结电池包括依次层叠设置的p型AlGaAs窗口层、p型GaAs发射层、n型GaAs基区层，其能隙为1.42ev。
参见图5，图5提供了一种高转换效率的太阳能电池四，包括由上至下依次层叠设置的抗反射层、钙钛矿材料层、TiO2层、III-V族太阳能电池和DBR材料层，所述抗反射层上设置有接触电极一和接触电极二，所述III-V族太阳能电池包括由上至下依次层叠设置的覆盖层、窗口层、InGaAs n型发射层、InGaAs p型基区层、背表面电场层、隧道结、缓冲层、Gen型扩散层、Ge p型衬底。
参见图6，图6提供了一种高转换效率的太阳能电池五，包括由上至下依次层叠设置的抗反射层、钙钛矿材料层、TiO2层、III-V族太阳能电池和DBR材料层，所述抗反射层上设置有接触电极一和接触电极二，所述III-V族太阳能电池包括由上至下依次层叠设置的InGaP上电池、第一隧道结、InGaAs中电池、第二隧道结、缓冲层和Ge下电池，所述InGaP上电池包括由上至下依次层叠设置的n型AlInP窗口层、n型InGaP发射层、p型InGaP基区层和p型AlInP背表面电场层，其能隙为1.82ev，第一隧道结为p型AlGaAs/n-InGap隧道结，所述InGaAs中电池包括由上至下依次层叠设置的n型InGaP窗口层、n型InGaAs发射层、p型InGaAs基区层和p型InGaP背表面电场层，其能隙为1.40ev，所述第二隧道结为p型GaAs/n-GaAs隧道结，所述缓冲层包括n型InGaAs缓冲层和InGaP层，所述Ge下电池包括n型Ge层和p型Ge层，其能隙为0.65ev。
本发明在更进一步的优选实施例中，可以在抗反射层的上方设置聚光镜模组，优选菲涅尔透镜如专利CN104659139中使用的透镜，利用菲涅尔透镜中的光栅衍射效应使垂直入射的光偏折一个角度，增加光的传播长度进而提高光电转换效率。

Claims (7)

1.一种高转换效率的太阳能电池，其特征在于，包括由上至下依次层叠设置的抗反射层、钙钛矿材料层、TiO2层、III-V族太阳能电池和DBR层；其中，所述III-V族太阳能电池为多结太阳能电池；所述多结太阳能电池的结构由上至下具体为依次层叠设置的AlIn窗口层、InGaP发射层、InGaP基区层、AlGaInP背表面电场层、第一隧道结、InGaP窗口层、InGaAs发射层、InGaAs基区层、AlGaP背表面电场层、第二隧道结、InGaAs缓冲层、InGaP异质层、Ge基区层和Ge背表面电场层。
2.根据权利要求1所述的高转换效率的太阳能电池，其特征在于，所述抗反射层为仿生蛾眼结构。
3.根据权利要求1所述的高转换效率的太阳能电池，其特征在于，所述抗反射层的材料为氮化硅、二氧化硅中的至少一种。
4.根据权利要求1所述的高转换效率的太阳能电池，其特征在于，所述多结太阳能电池为三结太阳能电池，所述三结太阳能电池包括三个子电池，三个所述子电池的能隙由上至下依次递减。
5.根据权利要求1所述的高转换效率的太阳能电池，其特征在于，所述多结太阳能电池的结构由上至下具体为依次层叠设置的n-AlInP窗口层、n-InGaP发射层、p-InGaP基区层、p-AlInP背表面电场层、p-AlGaAs/n-InGap隧道结、n-InGaP窗口层、n-InGaAs发射层、p-InGaAs基区层、p-InGaP背表面电场层、p-GaAs/n-GaAs隧道结、n-InGaAs缓冲层、InGaP层、n-Ge层、p-Ge层。
6.根据权利要求1-5任一项所述的高转换效率的太阳能电池，其特征在于，所述抗反射层上方还设置有聚光镜模组。
7.根据权利要求6所述的高转换效率的太阳能电池，其特征在于，所述聚光镜模组为菲涅尔透镜。
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