CN109326525A - Mixing polarity AlGaN/GaN high electron mobility transistor and preparation method thereof based on sputtering AlN substrate - Google Patents
Mixing polarity AlGaN/GaN high electron mobility transistor and preparation method thereof based on sputtering AlN substrate Download PDFInfo
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- CN109326525A CN109326525A CN201810946001.3A CN201810946001A CN109326525A CN 109326525 A CN109326525 A CN 109326525A CN 201810946001 A CN201810946001 A CN 201810946001A CN 109326525 A CN109326525 A CN 109326525A
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- 239000000758 substrate Substances 0.000 title claims abstract description 131
- 238000002156 mixing Methods 0.000 title claims abstract description 106
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 84
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 22
- 238000005036 potential barrier Methods 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 39
- 229910021529 ammonia Inorganic materials 0.000 claims description 24
- 229910052594 sapphire Inorganic materials 0.000 claims description 22
- 239000010980 sapphire Substances 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 238000005915 ammonolysis reaction Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 238000005477 sputtering target Methods 0.000 claims description 2
- 239000013077 target material Substances 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 3
- 238000000137 annealing Methods 0.000 abstract description 8
- 230000037230 mobility Effects 0.000 description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000010439 graphite Substances 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000007914 intraventricular administration Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001883 metal evaporation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229960004756 ethanol Drugs 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- JOTBHEPHROWQDJ-UHFFFAOYSA-N methylgallium Chemical compound [Ga]C JOTBHEPHROWQDJ-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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Abstract
The present invention relates to a kind of mixing polarity AlGaN/GaN high electron mobility transistor and preparation method thereof based on sputtering AlN substrate, the preparation method includes: the predetermined fraction sputtering growing AIN substrate in substrate；The growing AIN nucleating layer on the rest part of substrate and AlN substrate；The growth mixing polar GaN buffer layer on AlN nucleating layer；Insert layer is grown on mixing polar GaN buffer layer；The growth mixing polarity AlGaN potential barrier in insert layer；Ohmic metal is evaporated in the corresponding AlGaN potential barrier of rest part of substrate, annealing, then source electrode and drain electrode is formed on the corresponding GaN buffer layer of the rest part of substrate, grid is prepared in the corresponding AlGaN potential barrier of AlN substrate simultaneously, is finally completed the preparation of mixing polarity AlGaN/GaN high electron mobility transistor.By this preparation method, a kind of available mixing polarity AlGaN/GaN high electron mobility transistor, on the basis of effectively reducing source electrode, drain ohmic contact resistance, suppressor grid underlying materials electric leakage, to significantly promote device performance.
Description
Technical field
The invention belongs to microelectronics technologies, and in particular to a kind of mixing polarity AlGaN/ based on sputtering AlN substrate
GaN high electron mobility transistor and preparation method thereof.
Background technique
Since the GaN polarity of N polar surface GaN and routine Ga polar surface is completely on the contrary, it is in photoelectric device, detector and micro-
There is good application prospect in the fields such as wave power device.For example, LED component is prepared using N polar surface GaN material, due to exhausting electricity
Field is identical with polarized electric field direction, can shorten the width of depletion region, so that lower cut-in voltage is obtained, and lower unlatching
Voltage is conducive to alleviate quantum confined stark effect, to improve the luminous efficiency of LED；It is prepared using N polar surface GaN material
When hydrogen gas detector, since the affinity on hydrogen atom and N polar surface GaN material surface is much larger than Ga polar surface GaN material,
Sensitivity based on N polar surface GaN Schottky diode is higher than the sensitivity of Ga polar surface GaN device；Using N polar surface
GaN material preparation HEMT device advantages such as low, better scaled down characteristic with naturally back potential barrier, ohmic contact resistance.
But since adsorption capacity of the N polar surface material to O impurity is too strong, material internal O impurity content is caused often to reach 1019Amount
Grade, this makes its concentration of background carriers be in a high level, this problem also fails to effective solution so far.Cause
This, certainly exists serious electrical leakage problems for the electronic device based on the face N heterojunction material.But based on mixing polarity
AlGaN/GaN heterojunction structure, selection source electrode and drain electrode underlying materials are N plane materiel material, and grid underlying materials are Ga polar material,
N polar surface material can then be efficiently used and prepare the low advantage of ohmic contact resistance, while can be to avoid the electric leakage pair of N plane materiel material
HEMTs device bring adverse effect, can significantly promote device performance.
At present realize mixing polarity nitride material growth technique be based primarily upon MBE (molecular beam epitaxy) growing method and
Dry etching technology.As shown in FIG. 1, FIG. 1 is a kind of prepare that the prior art provides to mix polar GaN material for its preparation flow
Method: firstly, using MOCVD (metallorganic chemical vapor deposition) or MBE technology extension on a sapphire substrate
Certain thickness AlN nucleating layer；Then graphic mask is done on nucleating layer；Unmasked areas is etched to lining with dry etching again
Bottom, and exposure mask is removed；Finally, reusing MBE extension GaN.It is the pole N using the GaN that MBE is directly grown on a sapphire substrate
Property face, and the GaN grown on AlN nucleating layer is the principle of Ga polar surface, realizes the growth of mixing polar GaN.
However, the polar method of this mixing is relatively complicated, the technique by the complexity such as dry etching and regrowth is needed
Process greatly improves the cost of experiment and reduces the stability and repeatability of technique.Meanwhile directly in Sapphire Substrate
On the N polar surface GaN material that grows out it is second-rate, it is difficult to meet device preparation technology requirement.
Therefore, it is necessary to explore more easy-to-use technical solution to realize that high quality mixes polarity nitride film material
Growth.
Summary of the invention
In order to solve above-mentioned problems of the prior art, the present invention provides a kind of based on the mixed of sputtering AlN substrate
Close polarity AlGaN/GaN high electron mobility transistor and preparation method thereof.The technical problem to be solved in the present invention passes through following
Technical solution is realized:
An embodiment provides a kind of mixing polarity AlGaN/GaN high electronics based on sputtering AlN substrate
The preparation method of mobility transistor, comprising:
Growing AIN substrate is sputtered in the predetermined fraction of substrate；
The growing AIN nucleating layer on the rest part of the substrate and the AlN substrate；
The growth mixing polar GaN buffer layer on the AlN nucleating layer；
Insert layer is grown on the GaN buffer layer；
The growth mixing polarity AlGaN potential barrier in the insert layer；
Ohmic metal is evaporated in the corresponding mixing polarity AlGaN potential barrier of rest part of the substrate, is annealed,
Then source electrode and drain electrode is formed on the corresponding mixing polar GaN buffer layer of the rest part of the substrate, while in institute
It states and prepares grid in the corresponding mixing polarity AlGaN potential barrier of AlN substrate, be finally completed mixing polarity AlGaN/GaN high
The preparation of electron mobility transistor.
In one embodiment of the invention, the substrate material is sapphire.
In one embodiment of the invention, growing AIN substrate is sputtered in the predetermined fraction of substrate, comprising:
Nitrogen and argon gas are passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Using Al as sputtering target material, growing AIN substrate is sputtered in the predetermined fraction of substrate.
In one embodiment of the invention, growing AIN substrate is sputtered in the predetermined fraction of substrate, later further include:
High-temperature ammonolysis processing is carried out to the substrate.
In one embodiment of the invention, growing AIN is nucleated on the rest part of the substrate and the AlN substrate
Layer, comprising:
At 1000 DEG C~1100 DEG C of temperature, the pressure of 30Torr~50Torr, using low-pressure MOCVD technique, with three
Aluminium methyl is as the source Al, and using ammonia as the source N, growing AIN is nucleated on the rest part of the substrate and the AlN substrate
Layer, growth time are 10min~30min.
In one embodiment of the invention, the growth mixing polar GaN buffer layer on the AlN nucleating layer, comprising:
At 900 DEG C~1100 DEG C of temperature, the pressure of 30Torr~50Torr, using low-pressure MOCVD technique, with front three
Base gallium is as the source Ga, and using ammonia as the source N, growth mixing polar GaN buffer layer, growth time are on the AlN nucleating layer
50min~70min.
In one embodiment of the invention, the growth mixing polarity AlGaN potential barrier in the insert layer, comprising:
At 900 DEG C~1100 DEG C of temperature, the pressure of 30Torr~50Torr, using low-pressure MOCVD technique, with front three
Base gallium is as the source Ga, and trimethyl aluminium is as the source Al, using ammonia as the source N, the growth mixing polarity AlGaN gesture in the insert layer
Barrier layer, growth time are 1min~5min.
In one embodiment of the invention, the component of Al is 20%~60% in the mixing polarity AlGaN potential barrier.
In one embodiment of the invention, it is described mixing polarity AlGaN potential barrier with a thickness of 6nm~30nm.
Another embodiment of the present invention provides a kind of mixing polarity AlGaN/GaN high based on sputtering AlN substrate is electric
Transport factor transistor, the mixing polarity AlGaN/GaN high electron mobility transistor is by any described in above-described embodiment
Method prepare to be formed；
The mixing polarity AlGaN/GaN high electron mobility transistor includes: substrate, AlN substrate, AlN nucleating layer, mixes
Close polar GaN buffer layer, insert layer, mixing polarity AlGaN potential barrier, source electrode, drain electrode, grid；
The AlN substrate is located on the predetermined fraction of the substrate；
The AlN nucleating layer is located on the rest part and the AlN substrate of the substrate；
The mixing polarity AlGaN potential barrier, the insert layer, the mixing polar GaN buffer layer are from top to bottom successively
On the AlN nucleating layer；
The source electrode, described drain are relatively arranged on the corresponding mixing polar GaN buffer layer of rest part of substrate
On；The grid is set in the corresponding mixing polarity AlGaN potential barrier of the AlN substrate.
Compared with prior art, beneficial effects of the present invention:
1. the present invention utilizes " magnetron sputtering AlN substrate and MOCVD growing AIN nucleating layer " and " simple MOCVD is grown
Critical ammonia/trimethyl gallium molar flow ratio difference that growth GaN material polarity inverts on AlN nucleating layer " realizes monolithic lining
The growth that polarity AlGaN/GaN heterojunction structure is mixed on bottom, avoids secondary epitaxy and etching, effectively improves work
Skill stability and repeatability, and then high electron mobility transistor, source are prepared on mixing polarity AlGaN/GaN heterojunction structure
Pole, drain corresponding N plane materiel material, and grid corresponds to Ga plane materiel material, efficiently uses the small advantage of N plane materiel material ohmic contact resistance, simultaneously
The electric leakage of grid underlying materials can be reduced, significantly promote device performance；
2. the mixing polar material that the present invention is grown is respectively positioned on AlN nucleating layer, quality of materials is relatively directly on sapphire
The material of growth, which has, to be obviously improved；
3. the present invention on the basis of mixing polar GaN material, further realizes mixing polarity AlGaN/GaN high electronics and moves
The preparation of shifting rate transistor has more actual application value；
4. the magnetron sputtering and MOCVD technique ratio MBE technique that the present invention uses are more commonly used in nitride epitaxial, work
Skill is more mature and stable, and is easily achieved large scale epitaxy technique, has stronger commercial applications potentiality.
Detailed description of the invention
Fig. 1 is a kind of method for preparing mixing polar GaN material that the prior art provides；
Fig. 2 is that a kind of mixing polarity AlGaN/GaN high electronics based on sputtering AlN substrate provided in an embodiment of the present invention moves
The flow diagram of the preparation method of shifting rate transistor；
Fig. 3 is that a kind of mixing polarity AlGaN/GaN high electronics based on sputtering AlN substrate provided in an embodiment of the present invention moves
The cross section structure schematic diagram of shifting rate transistor.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one:
Fig. 2 is referred to, Fig. 2 is a kind of mixing polarity AlGaN/ based on sputtering AlN substrate provided in an embodiment of the present invention
The flow diagram of the preparation method of GaN high electron mobility transistor.
The embodiment of the invention provides a kind of mixing polarity AlGaN/GaN high electron mobilities based on sputtering AlN substrate
The preparation method of transistor, specifically includes the following steps:
Step 1: sputtering growing AIN substrate in the predetermined fraction of substrate.
In embodiments of the present invention, substrate select c surface sapphire substrate, successively using dehydrated alcohol, acetone, ethylene glycol,
Deionized water is cleaned by ultrasonic Sapphire Substrate, and scavenging period is respectively 2min.
It should be noted that any material that can substitute Sapphire Substrate, shall fall within the protection scope of the present invention.
It should be noted that under normal circumstances, predetermined fraction is located at the centre of substrate；But in practical application, portion is preset
Dividing can be configured according to specific requirement on devices, and the present invention is not limited thereto.
Further, using magnetron sputtering technique, the predetermined fraction using mask plate in Sapphire Substrate sputters AlN base
Plate.
Specifically, the mask plate prepared is covered on to clean sapphire substrate surface, Sapphire Substrate is put into magnetic
In control sputtering reaction chamber, sputtering power 0.2kW, sputter gas selects the mixed gas of nitrogen and argon gas, and nitrogen functions simultaneously as
Reaction gas；It is the high pure metal Al target of 5N that target, which selects purity, and Al target accesses the electric field of alternation, utilizes plasma bombardment
Al target, it is -30V~-60V, sputtering time 10min, sputter temperature 650 that Sapphire Substrate voltage is kept in sputtering process
DEG C, AlN substrate is sputtered in the predetermined fraction of Sapphire Substrate；Corresponding AlN substrate with a thickness of 20nm~40nm.
In a specific embodiment, the mixed proportion of nitrogen and argon gas is 2:2.
In a specific embodiment, magnetron sputtering technique is reactive magnetromsputtering.
After sputtering growing AIN substrate, using MOCVD technique, high temperature nitrogen is carried out to the Sapphire Substrate with AlN substrate
Change processing.
Specifically, the Sapphire Substrate with AlN substrate is placed on above graphite base, guarantees that substrate normally floats,
Then graphite base is placed into MOCVD reaction chamber, guarantees that graphite base being capable of normal autobiography and revolution.Finally, by penetrating
Frequency source heats graphite base, and the temperature of graphite base in 7min is made to be increased to 920 DEG C, that is, reaction temperature is 920
DEG C, and temperature 5min is kept, high-temperature ammonolysis processing is carried out to Sapphire Substrate.
High-temperature ammonolysis process can not only eliminate the unfavorable factors such as sapphire substrate surface attachment dangling bonds, while can incite somebody to action
The Al atom of sapphire substrate surface carries out nitridation and forms AlN pre-reaction layer, provides good substrate for subsequent reactions.
Step 2: the growing AIN nucleating layer on the rest part of the substrate and the AlN substrate.
Further, using low-pressure MOCVD technique, the growing AIN on the rest part of Sapphire Substrate and AlN substrate
Nucleating layer.
Specifically, the temperature for controlling graphite base gradually rises it to 1070 DEG C, using hydrogen as carrier gas, brings trimethyl into
Aluminium is passed through ammonia as the source N as the source Al, and keep reaction intraventricular pressure is the dynamic equilibrium of 40Torr by force, then in indigo plant
Growing AIN nucleating layer on jewel substrate and AlN substrate.Wherein, hydrogen flowing quantity is 720sccm~880sccm, and ammonia flow is
5400sccm~6600sccm, trimethyl aluminium flow are 10sccm~14sccm；Wherein, the growth time of AlN nucleating layer is
20min, with a thickness of 100nm.
In a specific embodiment, ammonia/trimethyl aluminium molar flow ratio is 5000.
Preferably, hydrogen flowing quantity 800sccm；Ammonia flow is 6000sccm；Trimethyl aluminium flow is 12sccm.
Step 3: the growth mixing polar GaN buffer layer on the AlN nucleating layer.
Further, using low-pressure MOCVD technique, the growth mixing polar GaN buffer layer on AlN nucleating layer.
Specifically, the temperature for controlling graphite base makes it be gradually decrease to 1000 DEG C, using hydrogen as carrier gas, brings trimethyl into
Gallium is passed through ammonia as the source N as the source Ga, and keep reaction intraventricular pressure is the dynamic equilibrium of 40Torr by force, is nucleated in AlN
Growth mixing polar GaN buffer layer on layer.Wherein, hydrogen flowing quantity is 720sccm~880sccmsccm, and ammonia flow is
1800sccm~2200sccm, TMGa flow rate are 90sccm~110sccm；Wherein, the growth of polar GaN buffer layer is mixed
Time is 60min, with a thickness of 1500nm.
In a specific embodiment, ammonia/trimethyl gallium molar flow ratio is 2000.
Preferably, hydrogen flowing quantity 800sccm；Ammonia flow is 2000sccm；TMGa flow rate is 100sccm；
Further, mixing polar GaN buffer layer includes N polar surface GaN buffer layer and Ga polar surface GaN buffer layer, the pole N
Property face GaN buffer layer is located on the corresponding AlN nucleating layer of rest part of substrate；Ga polar surface GaN buffer layer is located at AlN substrate
On corresponding AlN nucleating layer.
It should be noted that material is in the growth of MOCVD technique, with the increase of ammonia/trimethyl gallium molar flow ratio,
Material growth can be converted into N polar surface from Ga polar surface.In sputtering AlN substrate and low-pressure MOCVD technique growing AIN nucleating layer
Grow GaN buffer layer when, material polarity from the critical condition that Ga polar surface is inverted to N polar surface be ammonia/trimethyl gallium mole
Flow-rate ratio is 3000, and when growing GaN buffer layer on low-pressure MOCVD technique growing AIN nucleating layer, material polarity is from Ga polarity
Face be reversed to N polar surface critical condition be ammonia/trimethyl gallium molar flow ratio be 1000, therefore, as ammonia/tri- of selection
When methyl gallium molar flow ratio is between 1000 and 3000, in magnetron sputtering AlN substrate and low-pressure MOCVD technique growing AIN
The GaN buffer layer grown on nucleating layer is Ga polar surface, and the GaN grown on the AlN nucleating layer of low-pressure MOCVD technique growth
Material is N polar surface.
Step 4: growing insert layer on the mixing polar GaN buffer layer.
Further, using low-pressure MOCVD technique, the growing AIN insert layer on mixing polar GaN buffer layer.
Specifically, the temperature for controlling graphite base stablizes it at 1000 DEG C, using hydrogen as carrier gas, brings trimethyl aluminium work into
For the source Al, while ammonia is passed through as the source N, and keep reaction intraventricular pressure is the dynamic equilibrium of 40Torr by force, in mixing polar GaN
Growing AIN insert layer on buffer layer.Wherein, hydrogen flowing quantity 800sccm, ammonia flow 400sccm, trimethyl aluminium flow are
5sccm。
Wherein, the growth time of AlN insert layer is 20s, with a thickness of 2nm.
AlN insert layer promotes the mobility tool of two-dimensional electron gas in channel for inhibiting the alloy disorder of barrier layer to scatter
It is significant.
Step 5: the growth mixing polarity AlGaN potential barrier in the insert layer.
Further, using low-pressure MOCVD technique, the growth mixing polarity AlGaN potential barrier in AlN insert layer.
Specifically, the temperature for controlling graphite base gradually rises it to 1020 DEG C, using hydrogen as carrier gas, brings trimethyl into
Gallium, trimethyl aluminium are passed through ammonia as the source N as the source Ga and the source Al, and keep reaction intraventricular pressure is the dynamic of 40Torr by force
State balance, the growth mixing polarity AlGaN potential barrier in AlN insert layer.Wherein, TMGa flow rate 80sccm, trimethyl
Aluminum flux is 15sccm, ammonia flow 2000sccm；Wherein, mix polarity AlGaN potential barrier growth time be 1~
5min, with a thickness of 6nm~30nm.
In a specific embodiment, mixing Al component in polarity AlGaN potential barrier is 20%~60%.
When Al component is 20% in mixing polarity AlGaN potential barrier, when growth time is 5min, obtained mixing polarity
AlGaN potential barrier with a thickness of 30nm；When Al component is 40% in mixing polarity AlGaN potential barrier, when growth time is 3min,
Obtained mixing polarity AlGaN potential barrier with a thickness of 18nm；It is 60% when mixing Al component in polarity AlGaN potential barrier, it is raw
When being for a long time 1min, obtained mixing polarity AlGaN potential barrier with a thickness of 6nm.
It should be noted that the component variation of mixing polarity AlGaN potential barrier can electricity transport property to heterojunction structure
Generate apparent influence.Be embodied in, one: when Al component is higher, the polarization intensity of channel layer is bigger, the two dimension in channel
Electronics gas concentration is higher；Two: with the raising of Al component, the mobility of two-dimensional electron gas shows first to rise and decline afterwards in channel
Variation tendency.Therefore, for the application of different field, the optimal value of heterostructure barriers layer Al component is had differences.It can be with
Different designs are carried out as the case may be, and the present invention is not limited thereto.
It should be noted that is grown in the corresponding insert layer of N polar surface GaN buffer layer is the AlGaN gesture of N polar surface
Barrier layer, what is grown in the corresponding insert layer of Ga polar surface GaN buffer layer is the AlGaN potential barrier of Ga polar surface.
Step 6: ohm gold is evaporated in the corresponding mixing polarity AlGaN potential barrier of rest part of the substrate
Belonging to, then annealing forms source electrode and drain electrode on the corresponding mixing polar GaN buffer layer of the rest part of the substrate,
Grid is prepared in the corresponding mixing polarity AlGaN potential barrier of the AlN substrate simultaneously, is finally completed mixing polarity
The preparation of AlGaN/GaN high electron mobility transistor.
Step 6 the following steps are included:
Step 61: ohm gold is evaporated in the corresponding mixing polarity AlGaN potential barrier of rest part of the substrate
Belong to, then annealing forms source electrode and drain electrode on the corresponding mixing polar GaN buffer layer of the rest part of the substrate.
Specifically, in the corresponding mixing polarity AlGaN potential barrier of the rest part of substrate, that is, N polar surface
Photoetching source electrode region and drain regions in AlGaN potential barrier.Then, the potential barrier in source electrode region and drain regions
Evaporation ohmic metal is as source electrode and drain electrode on the overseas photoresist on layer and source electrode region and drain regions.This ohm of gold
Category is the metal stack structure being successively made of from bottom to top tetra- layers of metal of Ti, Al, Ni, Au, with a thickness ofThe sample for completing ohmic metal evaporation and removing is put into rapid thermal anneler and is carried out
Annealing, so that the ohmic metal of source electrode and drain electrode sinks down into mixing polar GaN buffer layer, to form ohmic metal and ditch
Ohmic contact between road, the process conditions of annealing are as follows: annealing atmosphere N2, annealing temperature is 850 DEG C, and annealing time is
30s。
Step 62: preparing the electric isolation of active area.
Using gluing, drying glue, exposure, development, stripping technology mixing polarity AlGaN potential barrier on photoetching electricity isolated region
Domain, and ultrapure water is carried out to sample and is dried with nitrogen, and sample is placed on 110 DEG C of hot plate and toasts 2min.Utilize ICP
(sense coupling) technique is sequentially etched the mixing polarity AlGaN potential barrier of electrically isolated area, insert layer and mixed
Polar GaN buffer layer is closed, to realize the mesa-isolated of active area, total etching depth is 500nm；Then sample is successively put
Enter acetone soln, cleaned in ethanol solution, to remove the overseas photoresist of electricity isolated region, then simultaneously with ultrapure water sample
With being dried with nitrogen.
It should be noted that active area refers to the device area inside electric isolation etching groove.
It should be noted that will form multiple transistors in a Sapphire Substrate, in order to make crystalline substance due in actual experiment
It is not interfere with each other between body pipe, needs to be isolated by electricity isolated region.
Step 63: preparing grid in the corresponding mixing polarity AlGaN potential barrier of the AlN substrate, be finally completed
Mix the preparation of polarity AlGaN/GaN high electron mobility transistor.
Using gluing, drying glue, exposure, development, stripping technology in the corresponding mixing polarity AlGaN potential barrier of AlN substrate,
It is exactly photoetching area of grid in the AlGaN potential barrier of the face Ga, and ultrapure water is carried out to sample and is dried with nitrogen.In area of grid
Schottky metal is evaporated on photoresist in the interior face Ga AlGaN potential barrier and outside area of grid as grid；The Schottky
Metal is the metal stack structure for being successively from bottom to top Ni and Au double layer of metal composition, with a thickness ofTo completion
The sample of gate metal evaporation, which is put into acetone, to be ultrasonically treated, and ultrasonic time is set as 10min, to remove outside grid
Sample is put into ultrasound removal removing glue in NMP (N-Methyl pyrrolidone) solution later, then used by schottky metal, photoresist
Isopropanol, ultrapure water sample and with being dried with nitrogen, complete the system of mixing polarity AlGaN/GaN high electron mobility transistor
It is standby.
Fig. 3 is referred to, Fig. 3 is a kind of mixing polarity AlGaN/GaN high based on AlN substrate provided in an embodiment of the present invention
The cross section structure schematic diagram of electron mobility transistor.The embodiment of the invention also provides a kind of based on the mixed of sputtering AlN substrate
Close polarity AlGaN/GaN high electron mobility transistor, comprising: substrate 1, AlN substrate 2, AlN nucleating layer 3, mixing polar GaN
Buffer layer 4, insert layer 5, mixing polarity AlGaN potential barrier 6, source electrode 7, drain electrode 8, grid 9；
AlN substrate 2 is located on the predetermined fraction of substrate 1；
AlN nucleating layer 3 is located on the rest part and AlN substrate 2 of substrate 1；
Mixing polarity AlGaN potential barrier 6, insert layer 5, mixing polar GaN buffer layer 4 be sequentially located at from top to bottom AlN at
On stratum nucleare；
Source electrode 7, drain electrode 8 are relatively arranged on the corresponding mixing polar GaN buffer layer 4 of rest part of substrate 1；Grid 9
It is set in the corresponding mixing polarity AlGaN potential barrier 6 of AlN substrate 2.
Compared with prior art, the invention has the following advantages that
1. the present invention utilizes " magnetron sputtering AlN substrate and MOCVD growing AIN nucleating layer " and " simple MOCVD is grown
Critical ammonia/trimethyl gallium molar flow ratio difference that growth GaN material polarity inverts on AlN nucleating layer " realizes monolithic lining
The growth that polarity AlGaN/GaN heterojunction structure is mixed on bottom, avoids secondary epitaxy and etching, effectively improves work
Skill stability and repeatability, and then high electron mobility transistor, source are prepared on mixing polarity AlGaN/GaN heterojunction structure
Pole, drain corresponding N plane materiel material, and grid corresponds to Ga plane materiel material, efficiently uses the small advantage of N plane materiel material ohmic contact resistance, simultaneously
The electric leakage of grid underlying materials can be reduced, significantly promote device performance；
2. the mixing polar material that the present invention is grown is respectively positioned on AlN nucleating layer, quality of materials is relatively directly on sapphire
The material of growth, which has, to be obviously improved；
3. the present invention on the basis of mixing polar GaN material, further realizes mixing polarity AlGaN/GaN high electronics and moves
The preparation of shifting rate transistor has more actual application value；
4. the magnetron sputtering and MOCVD technique ratio MBE technique that the present invention uses are more commonly used in nitride epitaxial, work
Skill is more mature and stable, and is easily achieved large scale epitaxy technique, has stronger commercial applications potentiality.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (10)
1. a kind of preparation method of the mixing polarity AlGaN/GaN high electron mobility transistor based on sputtering AlN substrate, special
Sign is, comprising:
Growing AIN substrate is sputtered in the predetermined fraction of substrate；
The growing AIN nucleating layer on the rest part of the substrate and the AlN substrate；
The growth mixing polar GaN buffer layer on the AlN nucleating layer；
Insert layer is grown on the GaN buffer layer；
The growth mixing polarity AlGaN potential barrier in the insert layer；
Ohmic metal is evaporated in the corresponding mixing polarity AlGaN potential barrier of rest part of the substrate, is annealed, then
Source electrode and drain electrode is formed on the corresponding mixing polar GaN buffer layer of rest part of the substrate, while in the AlN
Grid is prepared in the corresponding mixing polarity AlGaN potential barrier of substrate, mixing polarity AlGaN/GaN high electronics is finally completed and moves
The preparation of shifting rate transistor.
2. preparation method according to claim 1, which is characterized in that the substrate material is sapphire.
3. preparation method according to claim 1, which is characterized in that growing AIN substrate is sputtered in the predetermined fraction of substrate,
Include:
Nitrogen and argon gas are passed through after vacuumizing to the sputter chamber of magnetron sputtering apparatus；
Using Al as sputtering target material, growing AIN substrate is sputtered in the predetermined fraction of substrate.
4. preparation method according to claim 1, which is characterized in that growing AIN substrate is sputtered in the predetermined fraction of substrate,
Later further include:
High-temperature ammonolysis processing is carried out to the substrate.
5. preparation method according to claim 1, which is characterized in that in the rest part and the AlN base of the substrate
Growing AIN nucleating layer on plate, comprising:
At 1000 DEG C~1100 DEG C of temperature, the pressure of 30Torr~50Torr, using low-pressure MOCVD technique, with trimethyl
Aluminium is as the source Al, and using ammonia as the source N, the growing AIN nucleating layer on the rest part of the substrate and the AlN substrate is raw
It is for a long time 10min~30min.
6. preparation method according to claim 1, which is characterized in that the growth mixing polar GaN on the AlN nucleating layer
Buffer layer, comprising:
At 900 DEG C~1100 DEG C of temperature, the pressure of 30Torr~50Torr, using low-pressure MOCVD technique, with trimethyl gallium
As the source Ga, using ammonia as the source N, growth mixing polar GaN buffer layer, growth time 50min on the AlN nucleating layer
~70min.
7. preparation method according to claim 1, which is characterized in that the growth mixing polarity AlGaN in the insert layer
Barrier layer, comprising:
At 900 DEG C~1100 DEG C of temperature, the pressure of 30Torr~50Torr, using low-pressure MOCVD technique, with trimethyl gallium
As the source Ga, trimethyl aluminium is as the source Al, using ammonia as the source N, the growth mixing polarity AlGaN potential barrier in the insert layer
Layer, growth time are 1min~5min.
8. preparation method according to claim 1, which is characterized in that the group of Al in the mixing polarity AlGaN potential barrier
Part is 20%~60%.
9. preparation method according to claim 1, which is characterized in that it is described mixing polarity AlGaN potential barrier with a thickness of
6nm~30nm.
10. a kind of mixing polarity AlGaN/GaN high electron mobility transistor based on sputtering AlN substrate, which is characterized in that institute
Mixing polarity AlGaN/GaN high electron mobility transistor is stated to be prepared and formed by method according to any one of claims 1 to 9；
The mixing polarity AlGaN/GaN high electron mobility transistor includes: substrate (1), AlN substrate (2), AlN nucleating layer
(3), polar GaN buffer layer (4), insert layer (5), mixing polarity AlGaN potential barrier (6), source electrode (7), drain electrode (8), grid are mixed
Pole (9)；
The AlN substrate (2) is located on the predetermined fraction of the substrate (1)；
The AlN nucleating layer (3) is located on the rest part and the AlN substrate (2) of the substrate (1)；
The mixing polarity AlGaN potential barrier (6), the insert layer (5), the mixing polar GaN buffer layer (4) are from top to bottom
It is sequentially located on the AlN nucleating layer (3)；
The source electrode (7), the drain electrode (8) are relatively arranged on the corresponding mixing polarity of rest part of the substrate (1)
On GaN buffer layer (4)；The grid (9) is set to the corresponding mixing polarity AlGaN potential barrier of the AlN substrate (2)
(6) on.
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| CN111969045A (en) * | 2020-08-13 | 2020-11-20 | 西安电子科技大学 | GaN-based high electron mobility transistor with low ohmic contact resistance and preparation method thereof |
| CN112466925A (en) * | 2020-10-22 | 2021-03-09 | 西安电子科技大学 | Low-radio-frequency-loss silicon-based gallium nitride radio-frequency power device and preparation method thereof |
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| CN110596401A (en) * | 2019-09-11 | 2019-12-20 | 宁波盘福生物科技有限公司 | High-field asymmetric waveform ion mobility device and method for protein detection |
| CN110596401B (en) * | 2019-09-11 | 2024-05-14 | 宁波盘福生物科技有限公司 | High-field asymmetric waveform ion mobility device and method for protein detection |
| CN111969045A (en) * | 2020-08-13 | 2020-11-20 | 西安电子科技大学 | GaN-based high electron mobility transistor with low ohmic contact resistance and preparation method thereof |
| CN111969045B (en) * | 2020-08-13 | 2022-07-22 | 西安电子科技大学 | GaN-based high electron mobility transistor with low ohmic contact resistance and preparation method thereof |
| CN112466925A (en) * | 2020-10-22 | 2021-03-09 | 西安电子科技大学 | Low-radio-frequency-loss silicon-based gallium nitride radio-frequency power device and preparation method thereof |
| CN112466925B (en) * | 2020-10-22 | 2022-06-10 | 西安电子科技大学 | Low-radio-frequency-loss silicon-based gallium nitride radio-frequency power device and preparation method thereof |
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