CN109321892B - 一种电阻层及其制备方法 - Google Patents
一种电阻层及其制备方法 Download PDFInfo
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- CN109321892B CN109321892B CN201811177424.XA CN201811177424A CN109321892B CN 109321892 B CN109321892 B CN 109321892B CN 201811177424 A CN201811177424 A CN 201811177424A CN 109321892 B CN109321892 B CN 109321892B
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- seconds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201811177424.XA CN109321892B (zh) | 2018-10-10 | 2018-10-10 | 一种电阻层及其制备方法 |
Applications Claiming Priority (1)
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CN201811177424.XA CN109321892B (zh) | 2018-10-10 | 2018-10-10 | 一种电阻层及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN109321892A CN109321892A (zh) | 2019-02-12 |
CN109321892B true CN109321892B (zh) | 2021-05-18 |
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Family Applications (1)
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CN201811177424.XA Active CN109321892B (zh) | 2018-10-10 | 2018-10-10 | 一种电阻层及其制备方法 |
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CN (1) | CN109321892B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110468390B (zh) * | 2019-08-02 | 2021-06-29 | 北方夜视技术股份有限公司 | 超大长径比微通道板通道内壁制备功能膜层的方法 |
CN110981192B (zh) * | 2019-12-11 | 2022-02-18 | 中国建筑材料科学研究总院有限公司 | 低温用高稳定温阻特性的微通道板皮料玻璃及其制备方法和应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1829420A (zh) * | 2005-03-02 | 2006-09-06 | 三星电机株式会社 | 其中具有嵌入式电容器的印刷电路板及其制造方法 |
WO2012121677A1 (en) * | 2011-03-09 | 2012-09-13 | Nanyang Technological University | Method for depositing gradient films on a substrate surface by atomic layer deposition |
CN102903699A (zh) * | 2012-10-15 | 2013-01-30 | 复旦大学 | 一种铜互连结构及其制备方法 |
WO2014113720A1 (en) * | 2013-01-20 | 2014-07-24 | Kla-Tencor Corporation | Charge drain coating for electron-optical mems |
-
2018
- 2018-10-10 CN CN201811177424.XA patent/CN109321892B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1829420A (zh) * | 2005-03-02 | 2006-09-06 | 三星电机株式会社 | 其中具有嵌入式电容器的印刷电路板及其制造方法 |
WO2012121677A1 (en) * | 2011-03-09 | 2012-09-13 | Nanyang Technological University | Method for depositing gradient films on a substrate surface by atomic layer deposition |
CN102903699A (zh) * | 2012-10-15 | 2013-01-30 | 复旦大学 | 一种铜互连结构及其制备方法 |
WO2014113720A1 (en) * | 2013-01-20 | 2014-07-24 | Kla-Tencor Corporation | Charge drain coating for electron-optical mems |
Non-Patent Citations (4)
Title |
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"Atomic layer deposition for high aspect ratio through silicon vias";Martin Knaut等;《Microelectronic Engineering》;20131231;第107卷;第80页右栏倒数第1段、第82页右栏第1段及第83页左栏第1段 * |
"Atomic Layer Deposition of RuAlO Thin Films as a Diffusion Barrier for Seedless Cu Interconnects";Taehoon Cheon等;《Electrochemical and Solid-State Letters》;20110308;第14卷(第5期);第D57页右栏第2段、D58页左栏倒数第1段至右栏第1-2段、D59页倒数第1段及图5 * |
"Ruthenium Thin Films Grown by Atomic Layer Deposition";Titta Aaltonen等;《Chemical Vapor Deposition》;20031231;第9卷(第1期);第46页左栏倒数第1段 * |
Martin Knaut等."Atomic layer deposition for high aspect ratio through silicon vias".《Microelectronic Engineering》.2013,第107卷80-83. * |
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CN109321892A (zh) | 2019-02-12 |
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Inventor after: Feng Hao Inventor after: Gong Ting Inventor after: Hui Longfei Inventor after: Qin Lijun Inventor after: Li Jianguo Inventor after: Zhang Wangle Inventor after: Wang Weiping Inventor before: Feng Hao Inventor before: Gong Ting Inventor before: Qin Lijun Inventor before: Li Jianguo Inventor before: Wang Weiping Inventor before: Hui Longfei Inventor before: Zhang Wangle |