CN109309136B - Ultra-thin MgO layer modified Cu2O-plane heterojunction solar cell - Google Patents
Ultra-thin MgO layer modified Cu2O-plane heterojunction solar cell Download PDFInfo
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- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 24
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims abstract description 14
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000005329 float glass Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 44
- 238000005566 electron beam evaporation Methods 0.000 claims description 37
- 238000001704 evaporation Methods 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 10
- 238000010894 electron beam technology Methods 0.000 claims description 7
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 239000000969 carrier Substances 0.000 abstract description 3
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- 239000010931 gold Substances 0.000 description 23
- 238000000151 deposition Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 239000013077 target material Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000004070 electrodeposition Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- JVTAAEKCZFNVCJ-REOHCLBHSA-N L-lactic acid Chemical compound C[C@H](O)C(O)=O JVTAAEKCZFNVCJ-REOHCLBHSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910021607 Silver chloride Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention discloses an ultrathin MgO layer modified Cu2An O-plane heterojunction solar cell, which is of a laminated structure,sequentially comprises sodium calcium float glass, a Cr bonding layer, an Au electrode layer and Cu2O film layer, ultra-thin MgO film layer, SnO2The thickness of the film layer, the AZO film layer and the Al electrode layer is 1-3 nm. The invention is realized by adding Cu2The ultrathin MgO layer is deposited on the surface of the O film, so that the photo-generated carriers are effectively inhibited from being in Cu2O/SnO2Recombination at the heterojunction interface, resulting in an open circuit voltage (V) of the solar celloc) Short circuit current density (J)sc) Effectively improves the Filling Factor (FF) and the conversion efficiency (PCE), wherein the conversion efficiency (PCE) is Cu modified without an MgO layer23 times that of the O-plane heterojunction solar cell.
Description
Technical Field
The invention relates to a solar cell, in particular to an ultrathin MgO layer modified Cu2An O-plane heterojunction solar cell.
Background
Cu2O is a P-type semiconductor with a forbidden band width of about 2.1eV, and is widely concerned due to its advantages of non-toxicity, abundant resources, and high theoretical solar energy conversion efficiency (20%), and is considered to be a photovoltaic material with great development prospects. Adding P-type Cu2The heterojunction is prepared by O and N type semiconductor oxides to construct a heterojunction solar cell, and the high-performance Cu is prepared2The key to O-based solar cells. SnO2The N-type semiconductor with the forbidden band width of about 3.8eV is widely applied to the field of perovskite solar cells and dye-sensitized cells. However, the study reports Cu2O/SnO2Heterojunction solar cells do exhibit very poor photovoltaic characteristics due to SnO2And Cu2Excessive band offset of O, SnO2With the conduction band bottom close to Cu2Valence band top of O so as to drift to SnO2The photo-generated electrons are easy to diffuse to Cu again2O, and Cu2The photogenerated holes in the O valence band recombine. In addition, in the preparation of Cu2O/SnO2When the heterojunction is used, a high-density defect state is easily generated at a heterojunction interface, and the recombination of carriers is caused.
Disclosure of Invention
The invention aims to provide an ultrathin MgO layer modified Cu2An O-plane heterojunction solar cell.
The invention relates to an ultrathin MgO layer modified Cu2The O-plane heterojunction solar cell sequentially comprises sodium-calcium float glass and Cr pasteJunction layer, Au electrode layer, Cu2O film layer, ultra-thin MgO film layer, SnO2The thin film layer, the AZO thin film layer and the Al electrode layer, wherein the thickness of the ultrathin MgO thin film layer is 1-3 nm.
In the above technical solution, preferably, the thickness of the ultra-thin MgO film layer is 1 nm.
Preferably, the thickness of the Au electrode layer is 10-120 nm.
Preferably, said Cu2The thickness of the O film layer is not more than 3 μm.
Preferably, the thickness of the Cr bonding layer is 1-8 nm.
Preferably, said SnO2The thickness of the film layer is 5-20 nm.
Preferably, the thickness of the AZO thin film layer is 30-90 nm. ZnO doped with 2 at% Al may be used.
Preferably, the thickness of the Al electrode layer is 100-1000 nm.
Preferably, the ultra-thin MgO layer is prepared using electron beam evaporation technology. The parameters for preparing the ultrathin MgO by the electron beam evaporation technology are as follows: placing MgO single crystal particles with the purity of not less than 99.999 percent in a crucible, closing a cavity door and vacuumizing the cavity until the vacuum degree reaches 6.0 multiplied by 10-4And (4) below Pa, starting the electron beam gun, setting the high pressure of the gun to be 6kV, slowly increasing the beam current to 5mA, evaporating at the rate of 0.03nm/s, and evaporating an MgO layer to the required thickness.
One specific method for preparing the solar energy can comprise the following steps:
1) depositing a Cr bonding layer and an Au electrode on a soda-lime float glass substrate in sequence by adopting an Electron Beam Evaporation (EBE) technology;
2) deposition of Cu on Au electrode substrates using Electrodeposition (ED) technique2An O thin film layer;
3) using Electron Beam Evaporation (EBE) technique in Cu2Depositing an ultrathin MgO layer on the O layer;
4) SnO is sequentially deposited on the MgO layer by adopting laser pulse deposition (PLD) technology2A layer, an AZO layer;
5) and depositing an Al electrode on the AZO layer by adopting an Electron Beam Evaporation (EBE) technology.
The invention has the beneficial effects that:
1) the invention is in Cu2O/SnO2An ultra-thin MgO layer is inserted into the heterojunction to passivate Cu2O surface, reduction of Cu2SnO deposited on O surface in subsequent process2The defect state generated in the process inhibits the photon-generated carriers from being compounded at the heterojunction interface through the defect state, and the short-circuit current density and the filling factor of the solar cell are improved.
2) The invention is in Cu2O/SnO2Inserting ultra-thin MgO layer, Cu, in the heterojunction2The photo-generated electrons generated by the O light absorption layer can tunnel through the insulated MgO layer by a tunneling mechanism and are transmitted to SnO2A layer; meanwhile, MgO is used as an insulating layer, so that SnO can be inhibited2Electron in conduction band and Cu2Holes on the O valence band are recombined, so that dark leakage current is reduced, open-circuit voltage is increased, and filling factors are increased.
3) The invention is in Cu2O/SnO2An ultra-thin MgO layer is inserted into the heterojunction, so that the open-circuit voltage of the solar cell is improved by 63.4%, the short-circuit current density is improved by 62.3%, and the conversion efficiency is improved by 227.27%.
Drawings
FIG. 1 is a diagram of ultra-thin MgO layer modified Cu2And the structure schematic diagram of the O-plane heterojunction solar cell.
FIG. 2 is Cu2O/MgO/SnO2J-V characteristic curve of a heterojunction solar cell, in which the MgO thickness is 2 nm.
FIG. 3 is Cu2O/SnO2J-V characteristic curve of a heterojunction solar cell.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
Referring to fig. 1, the solar cell of the present invention has a laminated structure comprising, in order from bottom to top, soda-lime float glass, a Cr bonding layer, an Au electrode layer, and Cu2O film layer, ultra-thin MgO film layer, SnO2The thin film layer, the AZO thin film layer and the Al electrode layer. Wherein the thickness of the ultrathin MgO film layer is 1-3 nm.
Example 1
1) The Electron Beam Evaporation (EBE) technology deposits a Cr bonding layer and an Au electrode on a soda-lime float glass substrate in sequence:
ultrasonically cleaning 2cm × 2cm × 1.6mm soda-lime float glass in acetone, deionized water and absolute ethyl alcohol for 15min, drying by using nitrogen, fixing on a sample table of EBE equipment, and closing a baffle of the sample table. Placing Cr and Au particles with the purity of 99.999 percent in No. 1 and No. 2 crucibles of the EBE equipment, closing a cavity door and vacuumizing the cavity until the vacuum degree of the EBE cavity reaches 6.0 multiplied by 10-4Pa or less. Setting a target crucible as a No. 1 crucible containing Cr particles, starting a film thickness meter, setting a target element as Cr, starting an electron beam gun, setting the high pressure of the gun to be 6kV, slowly lifting the beam to 15mA, setting the Cr evaporation rate to be 0.05nm/s, resetting the film thickness meter, starting a sample stage baffle, evaporating a Cr bonding layer, closing the sample stage baffle when the film thickness is 8nm, closing the film thickness meter, and adjusting the beam to be zero. Setting a target crucible as a No. 2 crucible containing Au particles, starting a film thickness meter, setting a target element as Au, slowly increasing the beam current to 150mA, wherein the evaporation rate of the Au is 0.08nm/s, starting a sample stage baffle after the film thickness meter is cleared, evaporating an Au electrode layer, closing the sample stage baffle when the film thickness is 120nm, and adjusting the beam current to zero. The electron gun system was turned off, the vacuum system was turned off, and the sample was taken out.
2) Deposition of Cu on Au electrode substrates using Electrodeposition (ED) technique2O film layer:
preparing a Cu solution containing 0.2mol/L2SO4·5H250ml of deionized water precursor solution of O and 3mol/L lactic acid, and adjusting the pH value of the deionized water precursor solution to 12.5 by using 2mol/L NaOH solution to finish the preparation of the precursor solution. In a three-electrode system, a platinum sheet (3cm multiplied by 3cm) is taken as a counter electrode, Ag/AgCl is taken as a reference electrode, an Au electrode substrate is taken as a working electrode, electrochemical deposition is carried out in a constant voltage (-0.4V) mode, the deposition time is 1.5h, and at the moment, Cu deposited on the gold substrate2The thickness of the O thin film layer was about 2.5 μm. And after the deposition is finished, cleaning the surface of the sample by using deionized water and absolute ethyl alcohol, and drying by using nitrogen.
3) Using Electron Beam Evaporation (EBE) technique in Cu2Depositing an ultrathin MgO layer on the O layer:
depositing the above 2) with Cu2Fixing the glass substrate of O on a sample table of the EBE equipment, closing a baffle of the sample table, placing MgO single crystal particles with the purity of 99.999 percent in a No. 1 crucible in the EBE equipment, closing a cavity door, vacuumizing the cavity until the vacuum degree of the EBE cavity reaches 6.0 multiplied by 10-4Pa or less. Setting a target crucible as a No. 1 crucible containing MgO single crystal particles, starting a film thickness meter, setting a target element as MgO, starting an electron beam gun, setting the high pressure of the gun to be 6kV, slowly increasing the beam current to 5mA, setting the evaporation rate of the MgO to be 0.03nm/s, starting a sample stage baffle after the film thickness meter is cleared, evaporating an MgO layer, closing the sample stage baffle when the film thickness is 2nm, closing the film thickness meter, and adjusting the beam current to be zero. The electron gun system was turned off, the vacuum system was turned off, and the sample was taken out.
4) SnO is sequentially deposited on the MgO layer by adopting laser pulse deposition (PLD) technology2Layer, AZO layer:
and (3) fixing the substrate deposited with the MgO in the step 3) on a sample table of the PLD cavity, and closing a baffle of the sample table. 2 inch SnO2The target material and the AZO target material are sequentially fixed on No. 1 and No. 2 target material racks, and the target-substrate distance is adjusted to be 65 mm. Closing the chamber door, and vacuumizing to 1.0 × 10-3Less than Pa, regulating the target material to SnO2And introducing oxygen to the target until the vacuum degree is 0.5 Pa. And starting a laser, and adjusting the laser energy to 300mJ and the frequency to 5 Hz. Opening the baffle of the sample stage after pre-sputtering for 2 minutes, closing the laser after sputtering for 40s, and then depositing SnO on the MgO layer2Is about 10nm thick. And closing the baffle of the sample table, adjusting the target material to be an AZO target, and introducing oxygen until the vacuum degree is 0.2 Pa. And starting a laser, and adjusting the laser energy to 300mJ and the frequency to 5 Hz. And opening a sample stage baffle after 2 minutes of pre-sputtering, and closing the laser after 7.5 minutes of sputtering, wherein the thickness of the AZO deposited on the MgO layer is about 90 nm. The PLD vacuum system was turned off and the sample was removed.
5) Depositing an Al electrode on the AZO layer using Electron Beam Evaporation (EBE) technique:
placing the glass substrate deposited with AZO in the step 4) in a specific electrode mask plate, fixing the glass substrate on a sample stage of EBE equipment, closing a baffle of the sample stage, and placing Al particles with the purity of 99.999 percent in the EBE equipmentAfter the crucible No. 1 is arranged, the cavity door is closed and the cavity is vacuumized until the vacuum degree of the EBE cavity reaches 6.0 multiplied by 10-4Pa or less. Setting a target crucible as a No. 1 crucible containing Al particles, starting a film thickness meter, setting a target element as Al, starting an electron beam gun, setting the high voltage of the gun to be 6kV, slowly increasing the beam current to 50mA, setting the Al evaporation rate to be 0.07nm/s, resetting the film thickness meter, starting a sample stage baffle, evaporating an Al electrode layer, closing the sample stage baffle when the film thickness is 300nm, closing the film thickness meter, and adjusting the beam current to be zero. The electron gun system was turned off, the vacuum system was turned off, and the sample was taken out.
Photoelectric conversion performance of the test sample: under the irradiation of AM1.5 light, light is injected from one end of the Al electrode, and the J-V characteristics of the sample are tested, as shown in FIG. 2, and the short-circuit current density, the open-circuit voltage, the fill factor and the conversion efficiency are respectively as follows: 2.633mA/cm20.425V, 32.22% and 0.36%.
Comparative example 1
1) The Electron Beam Evaporation (EBE) technology deposits a Cr bonding layer and an Au electrode on a soda-lime float glass substrate in sequence:
ultrasonically cleaning 2cm × 2cm × 1.6mm soda-lime float glass in acetone, deionized water and absolute ethyl alcohol for 15min, drying by using nitrogen, fixing on a sample table of EBE equipment, and closing a baffle of the sample table. Placing Cr and Au particles with the purity of 99.999 percent in No. 1 and No. 2 crucibles of the EBE equipment, closing a cavity door and vacuumizing the cavity until the vacuum degree of the EBE cavity reaches 6.0 multiplied by 10-4Pa or less. Setting a target crucible as a No. 1 crucible containing Cr particles, starting a film thickness meter, setting a target element as Cr, starting an electron beam gun, setting the high pressure of the gun to be 6kV, slowly lifting the beam to 15mA, setting the Cr evaporation rate to be 0.05nm/s, resetting the film thickness meter, starting a sample stage baffle, evaporating a Cr bonding layer, closing the sample stage baffle when the film thickness is 8nm, closing the film thickness meter, and adjusting the beam to be zero. Setting a target crucible as a No. 2 crucible containing Au particles, starting a film thickness meter, setting a target element as Au, slowly increasing the beam current to 150mA, wherein the evaporation rate of the Au is 0.08nm/s, starting a sample stage baffle after the film thickness meter is cleared, evaporating an Au electrode layer, closing the sample stage baffle when the film thickness is 120nm, and adjusting the beam current to zero. Turning off the electron gun systemThe system was emptied and the sample was removed.
2) Deposition of Cu on Au electrode substrates using Electrodeposition (ED) technique2O film layer:
preparing a Cu solution containing 0.2mol/L2SO4·5H250ml of deionized water precursor solution of O and 3mol/L lactic acid, and adjusting the pH value to 12.5 by using 2mol/L NaOH solution to finish the preparation of the precursor solution. In a three-electrode system, a platinum sheet (3cm multiplied by 3cm) is taken as a counter electrode, Ag/AgCl is taken as a reference electrode, an Au electrode substrate is taken as a working electrode, electrochemical deposition is carried out in a constant voltage (-0.4V) mode, the deposition time is 1.5h, and at the moment, Cu deposited on the gold substrate2The thickness of the O thin film layer was about 2.5 μm. And after the deposition is finished, cleaning the surface of the sample by using deionized water and absolute ethyl alcohol, and drying by using nitrogen.
3) Using laser pulse deposition (PLD) technique on Cu2SnO is deposited on the O layer in sequence2Layer, AZO layer:
depositing Cu in 2) above2And (4) fixing the substrate of the O on a sample table of the PLD cavity, and closing a baffle of the sample table. 2 inch SnO2The target material and the AZO target material are sequentially fixed on No. 1 and No. 2 target material racks, and the target-substrate distance is adjusted to be 65 mm. Closing the chamber door, and vacuumizing to 1.0 × 10-3Less than Pa, regulating the target material to SnO2And introducing oxygen to the target until the vacuum degree is 0.5 Pa. And starting a laser, and adjusting the laser energy to 300mJ and the frequency to 5 Hz. Opening a sample table baffle after pre-sputtering for 2 minutes, closing a laser after sputtering for 40s, and depositing Cu2SnO on O layer2Is about 10nm thick. And closing the baffle of the sample table, adjusting the target material to be an AZO target, and introducing oxygen until the vacuum degree is 0.2 Pa. And starting a laser, and adjusting the laser energy to 300mJ and the frequency to 5 Hz. Opening a sample table baffle after pre-sputtering for 2 minutes, closing a laser after sputtering for 7.5 minutes, and depositing Cu at the moment2The thickness of AZO on the O layer is about 90 nm. The PLD vacuum system was turned off and the sample was removed.
4) Depositing an Al electrode on the AZO layer using Electron Beam Evaporation (EBE) technique:
placing the glass substrate deposited with AZO in the step 3) in a specific mask plate, fixing the mask plate on a sample stage of EBE equipment, and closing a baffle of the sample stagePlacing Al particles with the purity of 99.999 percent in a No. 1 crucible in EBE equipment, closing a cavity door and vacuumizing the cavity until the vacuum degree of the EBE cavity reaches 6.0 multiplied by 10-4Pa or less. Setting a target crucible as a No. 1 crucible containing Al particles, starting a film thickness meter, setting a target element as Al, starting an electron beam gun, setting the high voltage of the gun to be 6kV, slowly increasing the beam current to 50mA, setting the Al evaporation rate to be 0.07nm/s, resetting the film thickness meter, starting a sample stage baffle, evaporating an Al electrode layer, closing the sample stage baffle when the film thickness is 300nm, closing the film thickness meter, and adjusting the beam current to be zero. The electron gun system was turned off, the vacuum system was turned off, and the sample was taken out.
Photoelectric conversion performance of the test sample: under the irradiation of AM1.5 light, light is injected from one end of the Al electrode, and the J-V characteristics of the sample are tested, as shown in FIG. 3, and the short-circuit current density, the open-circuit voltage, the fill factor and the conversion efficiency are respectively as follows: 1.62mA/cm20.26V, 29.3% and 0.11%.
It can be seen that the insertion of the ultra-thin MgO layer according to the present invention effectively improves Cu, compared to comparative example 12O/SnO2Due to the performance of the heterojunction solar cell, the open-circuit voltage of the solar cell is improved by 63.4%, the short-circuit current density is improved by 62.3%, and the conversion efficiency is improved by 227.27%.
Example 2
The procedure in this example was the same as in example 1 except that the MgO layer thickness was 1nm when the ultra-thin MgO layer was electron beam evaporation deposited in step 3).
Photoelectric conversion performance of the test sample: under the irradiation of AM1.5 light, light is injected from one end of an Al electrode, the J-V characteristics of a sample are tested, and the short-circuit current density, the open-circuit voltage, the filling factor and the conversion efficiency are respectively as follows: 3.92mA/cm20.43V, 41.49% and 0.70%.
Example 3
The procedure in this example was the same as in example 1 except that the MgO layer thickness was 1.5nm when the ultra-thin MgO layer was electron beam evaporation deposited in step 3).
Photoelectric conversion performance of the test sample: under the irradiation of AM1.5 light, light is injected from one end of the Al electrode, and the J-V characteristics, short-circuit current density, open-circuit voltage, and voltage of the sample are tested,The fill factor and conversion efficiency are respectively: 2.99mA/cm20.44V, 29.43% and 0.38%.
Comparing the embodiments 1, 2 and 3, it can be seen that when the thickness of the MgO layer is 1nm, the performance of the device is the best, and the short circuit current density, the open circuit voltage, the fill factor and the conversion efficiency are respectively: 3.92mA/cm20.43V, 41.49% and 0.70%. When the thickness of the MgO layer is continuously increased, the fill factor and the short-circuit current density of the solar cell device are both reduced to a certain extent, which is not favorable for improving the device performance.
Claims (9)
1. Ultra-thin MgO layer modified Cu2The O-plane heterojunction solar cell is characterized by sequentially comprising soda-lime float glass (1), a Cr bonding layer (2), an Au electrode layer (3) and Cu2O film layer (4), ultra-thin MgO film layer (5) and SnO2A film layer (6), an AZO film layer (7) and an Al electrode layer (8), wherein the thickness of the ultrathin MgO film layer is 1-3nm and is in the Cu range2The O film layer is obtained by deposition by adopting an electron beam evaporation technology.
2. The ultra-thin MgO layer modified Cu of claim 12The O-plane heterojunction solar cell is characterized in that the thickness of the ultrathin MgO thin film layer is 1 nm.
3. The ultra-thin MgO layer modified Cu of claim 12The O-plane heterojunction solar cell is characterized in that the thickness of the Au electrode layer is 10-120 nm.
4. The ultra-thin MgO layer modified Cu of claim 12The O-plane heterojunction solar cell is characterized in that the Cu is2The thickness of the O film layer is not more than 3 μm.
5. The ultra-thin MgO layer modified Cu of claim 12The O-plane heterojunction solar cell is characterized in that the thickness of the Cr bonding layer is 1-8 nm.
6. The ultra-thin MgO layer modified Cu of claim 12The O-plane heterojunction solar cell is characterized in that the SnO2The thickness of the film layer is 5-20 nm.
7. The ultra-thin MgO layer modified Cu of claim 12The O-plane heterojunction solar cell is characterized in that the thickness of the AZO thin film layer is 30-90 nm.
8. The ultra-thin MgO layer modified Cu of claim 12The O-plane heterojunction solar cell is characterized in that the thickness of the Al electrode layer is 100-1000 nm.
9. The ultra-thin MgO layer modified Cu of claim 12The O-plane heterojunction solar cell is characterized in that the parameters for preparing ultrathin MgO by an electron beam evaporation technology are as follows: placing MgO single crystal particles with the purity of not less than 99.999 percent in a crucible, closing a cavity door and vacuumizing the cavity until the vacuum degree reaches 6.0 multiplied by 10-4And (4) below Pa, starting the electron beam gun, setting the high pressure of the gun to be 6kV, slowly increasing the beam current to 5mA, evaporating at the rate of 0.03nm/s, and evaporating an MgO layer to the required thickness.
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