CN109308161A - Parameter adjustment controls, method and apparatus for flash memory - Google Patents
Parameter adjustment controls, method and apparatus for flash memory Download PDFInfo
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- CN109308161A CN109308161A CN201710618754.7A CN201710618754A CN109308161A CN 109308161 A CN109308161 A CN 109308161A CN 201710618754 A CN201710618754 A CN 201710618754A CN 109308161 A CN109308161 A CN 109308161A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0617—Improving the reliability of storage systems in relation to availability
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0629—Configuration or reconfiguration of storage systems
- G06F3/0634—Configuration or reconfiguration of storage systems by changing the state or mode of one or more devices
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
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- Techniques For Improving Reliability Of Storages (AREA)
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Abstract
The embodiment of the invention discloses a kind of parameter adjustment controls for flash memory, method and apparatus.The parameter adjustment controls include: data statistics module, for obtaining the user's history operation data of flash memory and carrying out data statistics to the user's history operation data；Parameter adjustment module, for adjusting the parameter setting of flash memory according to the result of the data statistics, to adapt to the corresponding use environment of the user's history operation data.According to the technical solution of the present invention, the adaptive adjustment that can be realized flash memory parameter, improves the applicability of flash memory.
Description
Technical field
The present embodiments relate to flash memory technology more particularly to a kind of for the parameter adjustment controls of flash memory, method and set
It is standby.
Background technique
Flash memory FLASH is as a kind of nonvolatile semiconductor memory, by the favor of various electronic equipments, therefore, no
Same electronic equipment proposes different requirements to FLASH.
In the prior art in order to guarantee the reliability of FLASH, and performance required for meeting, at design initial stage,
Operating condition inside FLASH is adjustable；During the test, determine the operating condition that meets the requirements, and by its
Solidification, during user's use, the performance of FLASH will be no longer changed.
Since the performance parameters of FLASH in the prior art are unadjustable, so that FLASH can only be in permitted working environment
Lower normal work, once working environment changes, then may result in the service performance of FLASH in other circumstances can not reach
To optimal.
Summary of the invention
The embodiment of the present invention provides a kind of parameter adjustment controls for flash memory, method and apparatus, to realize flash memory parameter
Adaptive adjustment, improve the applicability of flash memory.
In a first aspect, the embodiment of the invention provides a kind of parameter adjustment controls for flash memory, which includes:
Data statistics module, for obtain flash memory user's history operation data and to the user's history operation data into
Line number is according to statistics；
Parameter adjustment module, it is described to adapt to for adjusting the parameter setting of flash memory according to the result of the data statistics
The corresponding use environment of user's history operation data.
Further, the user's history operation data includes: user's history operating frequency and/or history data store class
Type.
Further, the parameter setting includes: control voltage, control at least one of time and operation mode ginseng
Number setting.
Further, the parameter adjustment module is specifically used for:
If the result of the data statistics meets default operating mode condition, the parameter setting of flash memory is adjusted, to adapt to
Use environment corresponding with the default operating mode.
Further, the default operating mode include: high speed read mode, cache mode, continuous read mode,
At least one of low-power consumption mode operation mode.
Second aspect, the embodiment of the invention also provides a kind of parameter regulation means for flash memory, comprising:
It obtains the user's history operation data of flash memory and data statistics is carried out to the user's history operation data；
The parameter setting of flash memory is adjusted, according to the result of the data statistics to adapt to the user's history operation data pair
The use environment answered.
Further, the user's history operation data includes: user's history operating frequency and/or history data store class
Type.
Further, the parameter setting includes: control voltage, control at least one of time and operation mode ginseng
Number setting.
Further, the parameter setting that flash memory is adjusted according to the result of the data statistics, to adapt to the user
The corresponding use environment of historical operating data, comprising:
If the result of the data statistics meets default operating mode condition, the parameter setting of flash memory is adjusted, to adapt to
Use environment corresponding with the default operating mode.
Further, the default operating mode include: high speed read mode, cache mode, continuous read mode,
At least one of low-power consumption mode operation mode.
The third aspect, the embodiment of the invention also provides a kind of terminal device, which includes appointing in the embodiment of the present invention
The parameter adjustment controls of flash memory are used for described in one.
The embodiment of the present invention provides a kind of parameter adjustment controls for flash memory, the data statistics module that includes using it and
Parameter adjustment module carries out data statistics to the user's history operation data of the flash memory of acquisition, and according to the knot of the data statistics
The parameter setting of fruit adjustment flash memory is utilized with adapting to the corresponding use environment of user's history operation data according to user's operation
Habituation adjust flash memory performance the advantages of, solve flash memory in the prior art performance parameters it is unadjustable caused by dodge
It deposits service performance in other circumstances and is unable to reach optimal problem, realize the adaptive adjustment of flash memory parameter, improve
The applicability of flash memory.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram for parameter adjustment controls for flash memory that the embodiment of the present invention one provides；
Fig. 2 is a kind of flow diagram of parameter regulation means for flash memory provided by Embodiment 2 of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Embodiment one
Fig. 1 is a kind of structural schematic diagram for parameter adjustment controls for flash memory that the embodiment of the present invention one provides.With reference to
Fig. 1, the parameter adjustment controls for flash memory include: data statistics module 110 and parameter adjustment module 120, below to each mould
Block is specifically described.
Data statistics module 110, for obtain flash memory user's history operation data and to user's history operation data into
Line number is according to statistics.
Optionally, user's history operation data can be obtained by the operation and use habit for recording user, can also be passed through
The user operation records obtained in preset time obtain.Wherein, flash memory can be nonvolatile memory, such as with it is non-flash
(NAND FLASH).Illustratively, carrying out data statistics to user's history operation data can specifically include according to inhomogeneity
The operation data of type carries out statistic of classification, for example, can to reading times, erasable number, Stored Data Type etc. respectively into
Row statistics.
The purpose for carrying out data statistics to user's history operation data is, sums up the operating habit of user, in order to
It adjusts the parameter setting of flash memory in time according to user operation habits, to realize the automatic adjusument of flash memory parameter, improves flash memory
Applicability so that performance of the flash memory under different operation habit can be arranged by adaptive adjusting parameter and reach most
It is excellent.
Preferably, user's history operation data includes but is not limited to: user's history operating frequency and/or history data store
Type.
Illustratively, user's history operating frequency can be in preset time period the frequency for reading and writing, wiping, such as read
Take the frequency of flash memory；History data store type can be the data type of user storage data in preset time period, e.g.
Storage is " 0 " or " 1 ".
Parameter adjustment module 120 is gone through for adjusting the parameter setting of flash memory according to the result of data statistics with adapting to user
The corresponding use environment of history operation data.
Since the different parameters setting of flash memory can make flash memory have different performances, thus, according to data statistics
As a result adjust flash memory parameter setting be in order to which the performance for currently being showed flash memory is better adapted to user operation habits, with
Make flash memory that can be optimal performance under a variety of different operations or use habit, is adapted to user's history operation data pair
The use environment answered, and then improve applicability of the flash memory under different use environments.
Optionally, it can prestore at least one adjustment model in a flash memory, can be correspondingly arranged and prestore in each adjustment model
Statistical result and the corresponding optimized parameter of the statistical result.Illustratively, can by several statistical results prestored in flash memory with
The result of actual data statistics is compared, to determine how the parameter setting of adjustment flash memory.For example, if actual number
Result according to statistics meets one of several statistical results prestored, then can be opposite according to the statistical result prestored met
The adjustment model answered is adjusted, i.e., sets corresponding optimized parameter under the adjustment model for the parameter of flash memory.
Preferably, parameter setting includes but is not limited to: control voltage, control at least one of time and operation mode
Parameter setting.
Illustratively, for NAND FLASH, control voltage for example can be read voltage (VREAD), write voltage
(VPGM), overvoltage (VPASS), wiping voltage (VERS) etc.；The control time for example can be read access time (tR), write time
(tPGM), it wipes time (tERS) etc.；Operation mode can be several operation modes prestored in flash memory.Optionally, parameter setting
It can also include write verification (PV) and wiping verifying (EV).Since there are interactional relationships between each parameter, thus adjusting
When can be not limited to be adjusted a kind of parameter setting, to reach optimal under the corresponding use environment of user's history operation data
Service performance is adjustment purpose, is not limited thereto.
Preferably, parameter adjustment module 120 specifically can be used for:
If the result of data statistics meets default operating mode condition, adjust the parameter setting of flash memory, with adapt to in advance
If the corresponding use environment of operation mode.
Optionally, at least one default operating mode can be prestored in a flash memory, and every kind of default operating mode corresponds to one kind
Mode condition then triggers mode switching command when meeting the mode condition, carries out corresponding pattern switching, or by flash memory
Parameter setting is accordingly adjusted to parameter corresponding to the default operating mode, thus the performance by flash memory under this kind of use environment
It is adjusted to optimal.
Preferably, default operating mode includes but is not limited to: high speed read mode, continuously reads mould at cache mode
At least one of formula, low-power consumption mode operation mode.
By taking NAND FLASH as an example, for high speed read mode, the arteries and veins of (program/erase) can be wiped/write by reducing
(pulse) intensity is rushed, is increased hop count (counter), and then reduces program/erase speed, so that storage unit threshold value electricity
The distribution of pressure is tightened, and improves precision and storage unit surplus (cell margin), so that the accuracy read improves,
It is final to improve reading speed；For cache mode, can be reduced by the pulse intensity of increase program/erase
Counter number optionally, can be used reading (read) electricity is varied multiple times at the time of reading to improve the speed of program/erase
Pressure carries out multiple read retry to compensate cell margin caused by quickly reading and reduce；For continuously reading mould
Formula can reduce reading interference (read disturb) to storage unit threshold voltage by suitably reducing read voltage (VREAD)
The influence of distribution；It, can be by the performance of the read/program/erase of reduction flash memory, to reduce flash memory for low-power consumption mode
Power consumption.
The technical solution of the present embodiment provides a kind of parameter adjustment controls for flash memory, the data statistics for including using it
Module and parameter adjustment module carry out data statistics to the user's history operation data of the flash memory of acquisition, and are united according to the data
Meter result adjustment flash memory parameter setting, to adapt to the corresponding use environment of user's history operation data, be utilized according to
The advantages of flash memory performance is adaptively adjusted in family operating habit, the performance parameters for solving flash memory in the prior art are unadjustable and lead
The service performance of the flash memory of cause in other circumstances is unable to reach optimal problem, realizes the adaptive adjustment of flash memory parameter,
Improve the applicability of flash memory.
Embodiment two
Fig. 2 is a kind of flow diagram of the parameter regulation means for flash memory provided by Embodiment 2 of the present invention.The party
Method is applicable to the case where being adjusted to the parameter of flash memory, and this method can be held by the parameter adjustment controls for flash memory
Row, which can be made of hardware and/or software, and can generally be integrated in flash memory and all terminals comprising store function are set
In standby.It specifically includes as follows:
S210, the user's history operation data for obtaining flash memory simultaneously carry out data statistics to user's history operation data.
Optionally, user's history operation data can be obtained by the operation and use habit for recording user, can also be passed through
The user operation records obtained in preset time obtain.Wherein, flash memory can be nonvolatile memory, such as with it is non-flash
(NAND FLASH).Illustratively, carrying out data statistics to user's history operation data can specifically include according to inhomogeneity
The operation data of type carries out statistic of classification, for example, can to reading times, erasable number, Stored Data Type etc. respectively into
Row statistics.
The purpose for carrying out data statistics to user's history operation data is, sums up the operating habit of user, in order to
It adjusts the parameter setting of flash memory in time according to user operation habits, to realize the automatic adjusument of flash memory parameter, improves flash memory
Applicability so that performance of the flash memory under different operation habit can be arranged by adaptive adjusting parameter and reach most
It is excellent.
Preferably, user's history operation data includes: user's history operating frequency and/or history data store type.
Illustratively, user's history operating frequency can be in preset time period the frequency for reading and writing, wiping, such as read
Take the frequency of flash memory；History data store type can be the data type of user storage data in preset time period, e.g.
Storage is " 0 " or " 1 ".
S220, the parameter setting that flash memory is adjusted according to the result of data statistics, it is corresponding to adapt to user's history operation data
Use environment.
Since the different parameters setting of flash memory can make flash memory have different performances, thus, according to data statistics
As a result adjust flash memory parameter setting be in order to which the performance for currently being showed flash memory is better adapted to user operation habits, with
Make flash memory that can be optimal performance under a variety of different operations or use habit, is adapted to user's history operation data pair
The use environment answered, and then improve applicability of the flash memory under different use environments.
Optionally, it can prestore at least one adjustment model in a flash memory, can be correspondingly arranged and prestore in each adjustment model
Statistical result and the corresponding optimized parameter of the statistical result.Illustratively, can by several statistical results prestored in flash memory with
The result of actual data statistics is compared, to determine how the parameter setting of adjustment flash memory.For example, if actual number
Result according to statistics meets one of several statistical results prestored, then can be opposite according to the statistical result prestored met
The adjustment model answered is adjusted, i.e., sets corresponding optimized parameter under the adjustment model for the parameter of flash memory.
Preferably, parameter setting includes: that at least one parameter controlled in voltage, control time and operation mode is set
It sets.
Illustratively, for NAND FLASH, control voltage for example can be VREAD, VPGM, VPASS, VERS
Deng；The control time for example can be read access time tR, tPGM, tERS etc.；Operation mode can be several behaviour prestored in flash memory
Operation mode.Optionally, parameter setting can also include PV and EV.Since there are interactional relationships between each parameter, thus
It can be not limited to be adjusted a kind of parameter setting in adjustment, to reach under the corresponding use environment of user's history operation data
Optimal service performance be adjustment purpose, be not limited thereto.
Preferably, the parameter setting of flash memory is adjusted, according to the result of data statistics to adapt to user's history operation data pair
The use environment answered, comprising:
If the result of data statistics meets default operating mode condition, adjust the parameter setting of flash memory, with adapt to in advance
If the corresponding use environment of operation mode.
Optionally, at least one default operating mode can be prestored in a flash memory, and every kind of default operating mode corresponds to one kind
Mode condition then triggers mode switching command when meeting the mode condition, carries out corresponding pattern switching, or by flash memory
Parameter setting is accordingly adjusted to parameter corresponding to the default operating mode, thus the performance by flash memory under this kind of use environment
It is adjusted to optimal.
Preferably, the default operating mode include: high speed read mode, it is cache mode, continuous read mode, low
At least one of power consumption mode operation mode.
By taking NAND FLASH as an example, for high speed read mode, can by reducing the pulse intensity of program/erase,
Increase counter, and then reduces program/erase speed and improved so that the distribution of storage unit threshold voltage is tightened
Precision and cell margin finally improve reading speed so that the accuracy read improves；It, can for cache mode
By increasing the pulse intensity of program/erase, reducing counter number can to improve the speed of program/erase
Choosing, can be used VREAD is varied multiple times at the time of reading, that is, carry out multiple read retry compensate quickly read caused by
Cell margin is reduced；For continuous read mode, read disturb can be reduced by suitably reducing VREAD to storage
The influence of the distribution of cell threshold voltage；For low-power consumption mode, it can pass through the read/program/erase's of reduction flash memory
Performance, to reduce the power consumption of flash memory.
The technical solution of the present embodiment carries out data statistics by the user's history operation data of the flash memory to acquisition, and
The parameter setting of flash memory is adjusted according to the result of the data statistics, to adapt to the corresponding use environment of user's history operation data,
The advantages of flash memory performance is adaptively adjusted according to user operation habits is utilized, solves the performance parameters of flash memory in the prior art
The service performance of flash memory in other circumstances is unable to reach optimal problem caused by unadjustable, realizes flash memory parameter
Adaptive adjustment, improves the applicability of flash memory.
Embodiment three
The embodiment of the present invention three additionally provides a kind of terminal device, which uses the embodiment of the present invention one such as to provide
The parameter adjustment controls for flash memory when, it can be achieved that such as the parameter adjustment side provided by Embodiment 2 of the present invention for flash memory
Method, this method comprises: obtaining the user's history operation data of flash memory and carrying out data statistics to the user's history operation data；
The parameter setting of flash memory is adjusted, according to the result of the data statistics to adapt to the corresponding use of the user's history operation data
Environment.
Certainly, a kind of terminal device provided by the embodiment of the present invention, thereon using as the embodiment of the present invention one provides
It is not limited to realize method operation as described above when parameter adjustment controls, can also realize provided by any embodiment of the invention
For the relevant operation in the parameter regulation means of flash memory.
By the description above with respect to embodiment, it is apparent to those skilled in the art that, the present invention
It can be realized by software and required common hardware, naturally it is also possible to which by hardware realization, but in many cases, the former is more
Good embodiment.Based on this understanding, technical solution of the present invention substantially in other words contributes to the prior art
Part can be embodied in the form of hardware product, which can be set in various terminal equipment, as computer,
Mobile phone, smartwatch etc. are used including some instructions so that terminal device executes method described in each embodiment of the present invention.
It is worth noting that, included modules are only in the embodiment of the above-mentioned parameter adjustment controls for flash memory
It is to be divided according to the functional logic, but be not limited to the above division, as long as corresponding functions can be realized；Separately
Outside, the specific name of each functional module is also only for convenience of distinguishing each other, the protection scope being not intended to restrict the invention.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. a kind of parameter adjustment controls for flash memory characterized by comprising
Data statistics module, for obtaining the user's history operation data of flash memory and being counted to the user's history operation data
According to statistics；
Parameter adjustment module, for adjusting the parameter setting of flash memory according to the result of the data statistics, to adapt to the user
The corresponding use environment of historical operating data.
2. parameter adjustment controls according to claim 1, which is characterized in that the user's history operation data includes: use
Family historical operation frequency and/or history data store type.
3. parameter adjustment controls according to claim 1, which is characterized in that the parameter setting includes: control voltage, control
At least one parameter setting in time processed and operation mode.
4. parameter adjustment controls according to claim 1, which is characterized in that the parameter adjustment module is specifically used for:
If the result of the data statistics meets default operating mode condition, the parameter setting of flash memory is adjusted, to adapt to and institute
State the corresponding use environment of default operating mode.
5. parameter adjustment controls according to claim 4, which is characterized in that the default operating mode includes: high fast reading
At least one of modulus formula, cache mode, continuous read mode, low-power consumption mode operation mode.
6. a kind of parameter regulation means for flash memory characterized by comprising
It obtains the user's history operation data of flash memory and data statistics is carried out to the user's history operation data；
The parameter setting of flash memory is adjusted according to the result of the data statistics, it is corresponding to adapt to the user's history operation data
Use environment.
7. according to the method described in claim 6, it is characterized in that, the parameter setting include: control voltage, control the time with
And at least one parameter setting in operation mode.
8. according to the method described in claim 6, it is characterized in that, described adjust flash memory according to the result of the data statistics
Parameter setting, to adapt to the corresponding use environment of the user's history operation data, comprising:
If the result of the data statistics meets default operating mode condition, the parameter setting of flash memory is adjusted, to adapt to and institute
State the corresponding use environment of default operating mode.
9. according to the method described in claim 8, it is characterized in that, the default operating mode includes: high speed read mode, height
At least one of fast cache mode, continuous read mode, low-power consumption mode operation mode.
10. a kind of terminal device, which is characterized in that the equipment includes parameter adjustment of any of claims 1-5
Device.
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| CN109308161B (en) | 2022-04-01 |
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