CN105551522A - Management method and management apparatus of flash memory storage device - Google Patents
Management method and management apparatus of flash memory storage device Download PDFInfo
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- CN105551522A CN105551522A CN201610025374.8A CN201610025374A CN105551522A CN 105551522 A CN105551522 A CN 105551522A CN 201610025374 A CN201610025374 A CN 201610025374A CN 105551522 A CN105551522 A CN 105551522A
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
Abstract
The invention discloses a management method of a flash memory storage device. The management method of the flash memory storage device comprises the following steps of: receiving a storage mode switching command, determining a storage mode of the switched flash memory storage device according to the storage mode switching command; and correspondingly regulating storage capacity of the flash memory storage device according to the determined storage mode. The invention also discloses a management apparatus of the flash memory storage device. The method and the apparatus, provided by the invention, solve a problem that a user cannot voluntarily regulate performance, such as capacity and read-write speed, of the flash memory storage device caused by fixed data reading and data writing speed and capacity of the existing flash memory storage device, provide more diversified storage mode selections, and are designed more humanized.
Description
Technical field
The present invention relates to technical field of data storage, particularly relate to a kind of management method and device of flash memory device.
Background technology
Be that the memory device of storage medium is applied more and more general in daily life with flash memory, flash memory can be divided into single layer cell flash memory and multi-layered unit flash memory according to its internal framework, stores the information of 1 position (bit) in each unit (cell) of single layer cell flash memory; Each unit (cell) of multi-layered unit flash memory at least stores 2 position (bit) information, and wherein, multi-layered unit flash memory comprises the flash memory of 2bit/cell, 3bit/cell, 4bit/cell and more multi-bit cell.
In prior art, usually adopt single layer cell flash memory and multi-layered unit flash memory in flash memory device or only adopt multi-layered unit flash memory to improve the memory capacity of flash memory device, the capacity simultaneously fixing flash memory device when dispatching from the factory and the speed read and write data, therefore, the speed read and write data of existing flash memory device and capacity are fixed, cause user from performances such as the capacity of Row sum-equal matrix flash memory device and read or write speeds, inadequate hommization can not be designed.
Summary of the invention
Fundamental purpose of the present invention is the management method and the device that provide a kind of flash memory device, the speed read and write data and the capacity that are intended to solve existing flash memory device are fixed, and cause user can not from the problem of the performances such as the capacity of Row sum-equal matrix flash memory device and read or write speed.
For achieving the above object, the management method of a kind of flash memory device provided by the invention, the management method of described flash memory device comprises the following steps:
Receive memory module switching command, and determine the memory module of the described flash memory device after switching according to described memory module switching command;
The memory capacity of described memory module to described flash memory device according to determining adjusts accordingly.
Alternatively, when the described memory module determined is Large Copacity pattern, the described described memory module according to determining comprises the step that the memory capacity of described flash memory device carries out corresponding adjustment:
Determine the capacity that the backup block of described flash memory device has;
According to the adjustment of user to the capacity that described backup block has, the backup block corresponding to the capacity of adjustment is set to logical block.
Alternatively, when the described memory module determined is stable mode, the described described memory module according to determining comprises the step that the memory capacity of described flash memory device carries out corresponding adjustment:
Determine the capacity that the logical block of described flash memory device has;
According to the adjustment of user to the capacity that described logical block has, the logical block corresponding to the capacity of adjustment is set to backup block.
Alternatively, when the described memory module determined is velocity mode, the described described memory module according to determining comprises the step that the memory capacity of described flash memory device carries out corresponding adjustment:
Obtain the mode of operation that framework in described flash memory device is the logical block of multilevel-cell and the capacity had thereof, wherein, described mode of operation comprises SLC pattern and non-SLC pattern;
According to the adjustment of the capacity that the logical block of user to described multilevel-cell has, be SLC pattern by the working mode change of the logical block of the multilevel-cell corresponding to the capacity of adjustment.
Alternatively, when the described memory module determined is overstable fast mode, the described described memory module according to determining comprises the step that the memory capacity of described flash memory device carries out corresponding adjustment:
Obtaining framework in described flash memory device is the mode of operation of the logical block of multilevel-cell, and wherein, described mode of operation comprises SLC pattern and non-SLC pattern;
Be the working mode change of all logical blocks of non-SLC pattern by mode of operation in the logical block of described multilevel-cell be SLC pattern.
In addition, for achieving the above object, the present invention also provides a kind of management devices of flash memory device, and the management devices of described flash memory device comprises:
Receiver module, for receiving memory module switching command;
Determination module, for determining the memory module of the described flash memory device after switching according to described memory module switching command;
Adjusting module, for adjusting accordingly according to the memory capacity of described memory module to described flash memory device determined.
Alternatively, when the described memory module determined is Large Copacity pattern, described adjusting module comprises:
Determining unit, for determining the capacity that the backup block of described flash memory device has;
Setting unit, for according to the adjustment of user to the capacity that described backup block has, is set to logical block by the backup block corresponding to the capacity of adjustment.
Alternatively, when the described memory module determined is stable mode, described determining unit, also for determining the capacity that the logical block of described flash memory device has;
Described setting unit, also for according to the adjustment of user to the capacity that described logical block has, is set to backup block by the logical block corresponding to the capacity of adjustment.
Alternatively, when the described memory module determined is velocity mode, described adjusting module comprises:
Acquiring unit, for obtaining the mode of operation that framework in described flash memory device is the logical block of multilevel-cell and the capacity had thereof, wherein, described mode of operation comprises SLC pattern and non-SLC pattern;
The working mode change of the logical block of the multilevel-cell corresponding to the capacity of adjustment, for the adjustment of capacity had according to the logical block of user to described multilevel-cell, is SLC pattern by converting unit.
Alternatively, when the described memory module determined is overstable fast mode, described acquiring unit is also the mode of operation of the logical block of multilevel-cell for obtaining framework in described flash memory device, wherein, described mode of operation comprises SLC pattern and non-SLC pattern;
Described converting unit is also SLC pattern for being the working mode change of all logical blocks of non-SLC pattern by mode of operation in the logical block of described multilevel-cell.
The present invention is by receiving memory module switching command, and the memory module determining described flash memory device is switched according to described memory module, then adjust accordingly according to the memory capacity of described memory module to described flash memory device determined, corresponding pattern is set to by flash memory device, and the memory capacity of flash memory device under different memory modules and the speed difference read and write data, therefore, by flash memory device is set to corresponding memory module, thus solve the speed read and write data of existing flash memory device and capacity is fixed, cause user can not from the problem of the performances such as the capacity of Row sum-equal matrix flash memory device and read or write speed, provide more diversified memory module to select, design hommization more.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the first embodiment of the management method of flash memory device of the present invention;
Fig. 2 is the schematic flow sheet of the second embodiment of the management method of flash memory device of the present invention;
Fig. 3 is the schematic flow sheet of the 3rd embodiment of the management method of flash memory device of the present invention;
Fig. 4 is the schematic flow sheet of the 4th embodiment of the management method of flash memory device of the present invention;
Fig. 5 is the selection interface schematic diagram of a preferred embodiment of the management method of flash memory device of the present invention;
Fig. 6 is the high-level schematic functional block diagram of the first embodiment of the management devices of flash memory device of the present invention;
Fig. 7 is the refinement high-level schematic functional block diagram of adjusting module in Fig. 6;
Fig. 8 is another refinement high-level schematic functional block diagram of adjusting module in Fig. 6.
The realization of the object of the invention, functional characteristics and advantage will in conjunction with the embodiments, are described further with reference to accompanying drawing.
Embodiment
Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Based on the problems referred to above, the invention provides a kind of management method of flash memory device.
With reference to the schematic flow sheet that Fig. 1, Fig. 1 are the first embodiment of the management method of flash memory device of the present invention.
In the present embodiment, the management method of described flash memory device comprises:
Step S10, receives memory module switching command, and determines the memory module of the described flash memory device after switching according to described memory module switching command;
In the present embodiment, described flash memory device at least comprises a multi-layered unit flash memory, wherein, described multi-layered unit flash memory can be two layer unit flash memories, three-layer unit flash memory etc., described flash memory device also can also comprise one or more single layer cell flash memory, concrete, and described flash memory device can be USB flash disk, solid state hard disc based on flash memory, i.e. we usually said SSD (SolidStateDrives, solid state hard disc) etc.Described memory module switching command is the instruction of the memory module of the described flash memory device of switching that user triggers, or is the instruction of memory module of the described flash memory device of switching that system triggers according to actual conditions.Concrete, when described memory module switching command is the instruction of the memory module of the described flash memory device of switching that user triggers, can be provided by the screen of the terminal using described flash memory device and select interface, select the memory module of described flash memory device based on described selection interface for user, choose the memory module of described flash memory device user after, trigger memory module switching command.Concrete selection course is the selection interface schematic diagram of a preferred embodiment of the present invention with reference to figure 5, Fig. 5.If slider bar above slides to the left side by user, then memory module is adjusted to Large Copacity pattern, and when sliding into Far Left from current location, flash memory device is all in Large Copacity pattern always always; If slide, then memory module is adjusted to stable mode to the right, and when sliding into rightmost from current location, flash memory device is all in stable mode always always; If slider bar below slides by user, then memory module is adjusted to velocity mode to the right, until slider bar is below slided into rightmost, then memory module is now converted to overstable fast mode.After the memory module switching command receiving user's triggering, determine the memory module of the described flash memory device after switching according to described memory module instruction.Described memory module can comprise common-mode, Large Copacity pattern, stable mode, velocity mode, overstable fast mode.Described common-mode is the memory module that existing flash memory device has, the memory module that the flash memory device that the speed read and write data when namely dispatching from the factory and capacity are fixed has; Described Large Copacity pattern is the memory module that the backup block in described flash memory device can be converted to the logical block for storing data, wherein, described backup block is in the management algorithm of flash memory device, in order to ensure the stability of data, the partial logic block reserved, be intended to when there is bad block, the logical block that bad block is replaced, thus the serviceable life extending flash memory device; Described stable mode is just in time contrary with described Large Copacity pattern, for the logical block that can be stored data being used in described flash memory device is converted to the memory module of backup block; Described velocity mode is can by the TLC (TripleLevelCell of the partial logic block in the multi-layered unit flash memory in described flash memory device, three-layer unit) or MLC (MultiLevelCell, multilevel-cell) isotype is converted to the memory module of SLC (SingleLevelCell, single layer cell) pattern; Described overstable fast mode is by the TLC (TripleLevelCell of all logical blocks in the multi-layered unit flash memory in described flash memory device, three-layer unit) or MLC (MultiLevelCell, multilevel-cell) isotype is converted to the memory module of SLC (SingleLevelCell, single layer cell) pattern.
Step S20, the memory capacity of described memory module to described flash memory device according to determining adjusts accordingly.
After the memory module determining described flash memory device, the memory capacity of described flash memory device is adjusted accordingly, particularly, by arranging accordingly the data block causing the memory capacity of described flash memory device to change, thus change the memory capacity of described flash memory device, concrete setting up procedure is as follows: if described memory module is Large Copacity pattern, then the backup block in described flash memory device is converted to the logical block for storing data, the quantity being specifically converted to the backup block of logical block can preset, also the backup block quantity needing conversion can be calculated according to the volumeter promoted, if described memory module is stable mode, the logical block then being stored data being used in described flash memory device is converted to backup soon, the quantity being specifically converted to the logical block of backup block can preset, and also can calculate according to the volumeter of adjustment the logical block quantity needing conversion, if described memory module is velocity mode, then the mode of operation of the logical block in the multi-layered unit flash memory in described flash memory device is converted to SLC pattern from non-SLC pattern (TLC or MLC isotype), the quantity being specifically converted to the logical block of SLC pattern can preset, and also can calculate according to the volumeter of adjustment the logical block quantity needing conversion, if described memory module is overstable fast mode, then the mode of operation of all logical blocks in the multi-layered unit flash memory in described flash memory device is converted to SLC pattern from non-SLC pattern (TLC or MLC isotype).
The present embodiment is by receiving memory module switching command, and the memory module determining described flash memory device is switched according to described memory module, then adjust accordingly according to the memory capacity of described memory module to described flash memory device determined, corresponding pattern is set to by flash memory device, and the memory capacity of flash memory device under different memory modules and the speed difference read and write data, therefore, by flash memory device is set to corresponding memory module, thus solve the speed read and write data of existing flash memory device and capacity is fixed, cause user can not from the problem of the performances such as the capacity of Row sum-equal matrix flash memory device and read or write speed, provide more diversified memory module to select, design hommization more.
Further, propose the second embodiment of the management method of flash memory device of the present invention based on above-mentioned first embodiment, in the present embodiment, with reference to Fig. 2, when the described memory module determined is Large Copacity pattern, described step S20 comprises:
Step S21, determines the capacity that the backup block of described flash memory device has;
Step S21, according to the adjustment of user to the capacity that described backup block has, is set to logical block by the backup block corresponding to the capacity of adjustment.
In the present embodiment, described flash memory device usually all can reserved part logical block as backup block, once there is bad block in described flash memory device, then replace this bad block with described backup block, thus extend the serviceable life of described flash memory device, namely described backup block is the logical block that described flash memory device is reserved.After determining the capacity that the backup block of described flash memory device has, user can adjust the capacity that described backup block has, described backup block is set to logical block, the logical block for storing data is converted to by described backup block, thus adjust the capacity that described backup block has, and then reach the object of the capacity increasing described flash memory device.Particularly, in the process that the capacity had described backup block adjusts, the capacity that described backup block has can be divided into the capacity preset a shelves and select needs to adjust for user, the capacity of the flash memory device namely promoted, such as, suppose that the capacity that described backup block has is 200M, the capacity that described backup block has is divided into 4 shelves, be respectively 1 grade for 50M, 2 grades is 100M, 3 grades is 150M, 4 grades is 200M, if user selects 1 grade of capacity promoted as described flash memory device, the quantity needing backup block to be set to logical block is then determined according to the capacity of each backup block, then according to the backup block quantity determined, the i.e. backup block corresponding to capacity of described adjustment, the backup block of quantification in the backup block of described flash memory device is set to logical block, in like manner, if user selects 2, 3 or 4 grades of capacity promoted as described flash memory device, also be determine according to the capacity of each backup block the quantity that needs backup block to be set to logical block, then according to the backup block quantity determined, the backup block of quantification in the backup block of described flash memory device is set to logical block.It should be noted that, in the process adjusted the capacity of described backup block, the capacity had described backup block specifically divides gear number and does not limit in the present embodiment.
The present embodiment is by when the memory module determining described flash memory device is Large Copacity pattern, reserved backup block in described flash memory device is set to the logical block for storing data, thus improve the capacity of described flash memory device, user can select the memory capacity needing lifting simultaneously, thus makes the capacity boost of described memory storage devices more flexible.
Further, propose the 3rd embodiment of the management method of flash memory device of the present invention based on above-mentioned first embodiment, in the present embodiment, with reference to Fig. 3, when the described memory module determined is stable mode, described step S20 comprises:
Step S23, determines the capacity that the logical block of described flash memory device has;
Step S24, according to the adjustment of user to the capacity that described logical block has, is set to backup block by the logical block corresponding to the capacity of adjustment.
Described logical block is that each storage block is made up of multiple page for storing the block of data in described flash memory device.After determining the capacity that the logical block of described flash memory device has, user can adjust the capacity that described logical block has, logical block is set to backup block, thus extend the serviceable life of described flash memory device, certainly, reduce the memory capacity of described flash memory device accordingly, specifically life-extending length is relevant with the number described logical block being set to backup block, by more for the number that described logical block is set to described backup block, the life-span of described memory storage devices is longer, accordingly, the memory capacity of described memory storage devices is less.In the present embodiment, in the process that the capacity had described logical block adjusts, also the capacity that described logical block has can be divided into the life-span of presetting the flash memory device that a shelves selects needs to improve for user, such as, suppose that the capacity that described logical block has is 4G, described logical block is divided into 3 shelves, be respectively 1 grade of 3.5G, 2 grades of 3.0G, 3 grades of 2.5G, the corresponding life-span increased is respectively 1 year, 2 years, 3 years, if user selects 1 grade of life-span promoted as described flash memory device, the quantity needing logical block to be set to backup block is then determined according to the capacity of each logical block, then according to the logical block quantity determined, the logical block of quantification in the logical block of described flash memory device is set to backup block, accordingly, the memory capacity that the logical block being converted to backup block described in the memory capacity reduced is has, in like manner, if user selects 2 or 3 grades of life-spans promoted as described flash memory device, the quantity needing logical block to be set to backup block is then determined according to the capacity of each logical block, then according to the logical block quantity determined, the logical block of quantification in the logical block of described flash memory device is set to backup block, accordingly, the memory capacity reduced is the memory capacity that the logical block that is converted to backup block has.
The present embodiment, by when determining that described memory module is stable mode, by the logical block in described memory storage devices is set to backup block, thus improves the serviceable life of flash memory device.
Further, propose the 4th embodiment of the management method of flash memory device of the present invention based on above-mentioned first embodiment, in the present embodiment, with reference to Fig. 4, when the described memory module determined is velocity mode, described step S20 comprises:
Step S25, obtains the mode of operation that framework in described flash memory device is the logical block of multilevel-cell and the capacity had thereof, and wherein, described mode of operation comprises SLC pattern and non-SLC pattern;
The working mode change of the logical block of the multilevel-cell corresponding to the capacity of adjustment, according to the adjustment of the capacity that the logical block of user to described multilevel-cell has, is SLC pattern by step S26.
Described framework each storage unit (cell) that to be the logical block of multilevel-cell be in described logical block can store the logical block of multidigit (bit) information, comprise the logical block of two layer unit, the logical block of three-layer unit, the logical block etc. of four layer unit, the i.e. logical block of 2bit/cell, 3bit/cell, 4bit/cell etc.The mode of operation of the logical block of described multilevel-cell comprises SLC pattern and non-SLC pattern, described SLC pattern is the pattern that each storage unit (cell) in logical block stores a data, this pattern has the advantages that capacity is little, speed fast, long service life, stability are high, described non-SLC pattern comprises MLC pattern, TLC pattern etc., and MLC pattern has the advantages that capacity is moderate, speed is slow, serviceable life is medium and data are more stable; TLC pattern has the advantages that capacity is large, speed is slow, serviceable life is short and data are unstable.After the mode of operation of logical block getting the multilevel-cell in described memory device, the mode of operation that described framework is the logical block of multilevel-cell can be adjusted, be the working mode change of the logical block of non-SLC pattern by mode of operation in the logical block of described multilevel-cell be SLC pattern, memory module by the cell stores long numeric data in the logical block of multilevel-cell changes the memory module storing a data into, thus the life-span of improving described flash memory device, the speed read and write data and stability.Concrete, if the described memory module determined is velocity mode, then when be the working mode change of logical block of non-SLC pattern by mode of operation in the logical block of described multilevel-cell being SLC pattern, need be only SLC pattern by the working mode change of the partial logic block of non-SLC pattern, the adjustment of the capacity that the quantity of the logical block of concrete conversion can have according to the logical block of user to described multilevel-cell is determined, after the logical block quantity determining the multilevel-cell changed, be SLC pattern by the working mode change of the logical block of quantification in the logical block of multilevel-cell, if the described memory module determined is overstable fast mode, then when be the working mode change of logical block of non-SLC pattern by mode of operation in the logical block of described multilevel-cell being SLC pattern, need be SLC pattern by the working mode change of all logical blocks of non-SLC pattern.
The present embodiment by determine described memory module be velocity mode or overstable fast mode time, SLC pattern is set to by the mode of operation of the logical block by the multilevel-cell in described memory storage devices, thus the speed improving serviceable life of flash memory device, stability and read and write data.
The present invention further provides a kind of management devices of flash memory device.
With reference to the high-level schematic functional block diagram that Fig. 6, Fig. 6 are the first embodiment of the management devices of flash memory device of the present invention.
In the present embodiment, the management devices of described flash memory device comprises: receiver module 10, determination module 20 and adjusting module 30.
Described receiver module 10, for receiving memory module switching command;
Described determination module 20, for determining the memory module of the described flash memory device after switching according to described memory module switching command;
In the present embodiment, described flash memory device at least comprises a multi-layered unit flash memory, wherein, described multi-layered unit flash memory can be two layer unit flash memories, three-layer unit flash memory etc., described flash memory device also can also comprise one or more single layer cell flash memory, concrete, and described flash memory device can be USB flash disk, solid state hard disc based on flash memory, i.e. we usually said SSD (SolidStateDrives, solid state hard disc) etc.Described memory module switching command is the instruction of the memory module of the described flash memory device of switching that user triggers, or is the instruction of memory module of the described flash memory device of switching that system triggers according to actual conditions.Concrete, when described memory module switching command is the instruction of the memory module of the described flash memory device of switching that user triggers, can be provided by the screen of the terminal using described flash memory device and select interface, select the memory module of described flash memory device based on described selection interface for user, choose the memory module of described flash memory device user after, trigger memory module switching command.Concrete selection course is the selection interface schematic diagram of a preferred embodiment of the present invention with reference to figure 5, Fig. 5.If slider bar above slides to the left side by user, then memory module is adjusted to Large Copacity pattern, and slides into Far Left flash memory device from current location always and be all in Large Copacity pattern always; If slide, then memory module is adjusted to stable mode to the right, and slides into rightmost flash memory device from current location always and be all in stable mode always; If slider bar below slides by user, then memory module is adjusted to velocity mode to the right, until slider bar is below slided into rightmost, then memory module is now converted to overstable fast mode.After the memory module switching command receiving user's triggering, determine the memory module of the described flash memory device after switching according to described memory module instruction.Described memory module can comprise common-mode, Large Copacity pattern, stable mode, velocity mode, overstable fast mode.Described common-mode is the memory module that existing flash memory device has, the memory module that the flash memory device that the speed read and write data when namely dispatching from the factory and capacity are fixed has; Described Large Copacity pattern is the memory module that the backup block in described flash memory device can be converted to the logical block for storing data, wherein, described backup block is in the management algorithm of flash memory device, in order to ensure the stability of data, the partial logic block reserved, be intended to when there is bad block, the logical block that bad block is replaced, thus the serviceable life extending flash memory device; Described stable mode is just in time contrary with described Large Copacity pattern, for the logical block that can be stored data being used in described flash memory device is converted to the memory module of backup block; Described velocity mode is can by the TLC (TripleLevelCell of the partial logic block in the multi-layered unit flash memory in described flash memory device, three-layer unit) or MLC (MultiLevelCell, multilevel-cell) isotype is converted to the memory module of SLC (SingleLevelCell, single layer cell) pattern; Described overstable fast mode is by the TLC (TripleLevelCell of all logical blocks in the multi-layered unit flash memory in described flash memory device, three-layer unit) or MLC (MultiLevelCell, multilevel-cell) isotype is converted to the memory module of SLC (SingleLevelCell, single layer cell) pattern.
Described adjusting module 30, for adjusting accordingly according to the memory capacity of described memory module to described flash memory device determined.
After the memory module determining described flash memory device, the memory capacity of described flash memory device is adjusted accordingly, particularly, by arranging accordingly the data block causing the memory capacity of described flash memory device to change, thus change the memory capacity of described flash memory device, concrete setting up procedure is as follows: if described memory module is Large Copacity pattern, then the backup block in described flash memory device is converted to the logical block for storing data, the quantity being specifically converted to the backup block of logical block can preset, also the backup block quantity needing conversion can be calculated according to the volumeter promoted, if described memory module is stable mode, the logical block then being stored data being used in described flash memory device is converted to backup soon, the quantity being specifically converted to the logical block of backup block can preset, and also can calculate according to the volumeter of adjustment the logical block quantity needing conversion, if described memory module is velocity mode, then the mode of operation of the logical block in the multi-layered unit flash memory in described flash memory device is converted to SLC pattern from non-SLC pattern (TLC or MLC isotype), the quantity being specifically converted to the logical block of SLC pattern can preset, and also can calculate according to the volumeter of adjustment the logical block quantity needing conversion, if described memory module is overstable fast mode, then the mode of operation of all logical blocks in the multi-layered unit flash memory in described flash memory device is converted to SLC pattern from non-SLC pattern (TLC or MLC isotype).
The present embodiment is by receiving memory module switching command, and the memory module determining described flash memory device is switched according to described memory module, then adjust accordingly according to the memory capacity of described memory module to described flash memory device determined, corresponding pattern is set to by flash memory device, and the memory capacity of flash memory device under different memory modules and the speed difference read and write data, therefore, by flash memory device is set to corresponding memory module, thus solve the speed read and write data of existing flash memory device and capacity is fixed, cause user can not from the problem of the performances such as the capacity of Row sum-equal matrix flash memory device and read or write speed, provide more diversified memory module to select, design hommization more.
Further, second embodiment of the management devices of flash memory device of the present invention is proposed, in the present embodiment, with reference to Fig. 7 based on above-mentioned first embodiment, when the described memory module determined is Large Copacity pattern, described adjusting module 30 comprises: determining unit 31 and setting unit 32.
Described determining unit 31, for determining the capacity that the backup block of described flash memory device has;
Described setting unit 32, for according to the adjustment of user to the capacity that described backup block has, is set to logical block by the backup block corresponding to the capacity of adjustment.
In the present embodiment, described flash memory device usually all can reserved part logical block as backup block, once there is bad block in described flash memory device, then replace this bad block with described backup block, thus extend the serviceable life of described flash memory device, namely described backup block is the logical block that described flash memory device is reserved.After determining the capacity that the backup block of described flash memory device has, user can adjust the capacity that described backup block has, described backup block is set to logical block, the logical block for storing data is converted to by described backup block, thus adjust the capacity that described backup block has, and then reach the object of the capacity increasing described flash memory device.Particularly, in the process that the capacity had described backup block adjusts, the capacity that described backup block has can be divided into the capacity preset a shelves and select needs to adjust for user, the capacity of the flash memory device namely promoted, such as, suppose that the capacity that described backup block has is 200M, the capacity that described backup block has is divided into 4 shelves, be respectively 1 grade for 50M, 2 grades is 100M, 3 grades is 150M, 4 grades is 200M, if user selects 1 grade of capacity promoted as described flash memory device, the quantity needing backup block to be set to logical block is then determined according to the capacity of each backup block, then according to the backup block quantity determined, the i.e. backup block corresponding to capacity of described adjustment, the backup block of quantification in the backup block of described flash memory device is set to logical block, in like manner, if user selects 2, 3 or 4 grades of capacity promoted as described flash memory device, also be determine according to the capacity of each backup block the quantity that needs backup block to be set to logical block, then according to the backup block quantity determined, the backup block of quantification in the backup block of described flash memory device is set to logical block.It should be noted that, in the process adjusted the capacity of described backup block, the capacity had described backup block specifically divides gear number and does not limit in the present embodiment.
Further, when the described memory module determined is stable mode, described determining unit 31, also for determining the capacity that the logical block of described flash memory device has;
Described setting unit 32, also for according to the adjustment of user to the capacity that described logical block has, is set to backup block by the logical block corresponding to the capacity of adjustment.
Described logical block is that each storage block is made up of multiple page for storing the block of data in described flash memory device.After determining the capacity that the logical block of described flash memory device has, user can adjust the capacity that described logical block has, logical block is set to backup block, thus extend the serviceable life of described flash memory device, certainly, reduce the memory capacity of described flash memory device accordingly, specifically life-extending length is relevant with the number described logical block being set to backup block, by more for the number that described logical block is set to described backup block, the life-span of described memory storage devices is longer, accordingly, the memory capacity of described memory storage devices is less.In the present embodiment, in the process that the capacity had described logical block adjusts, also the capacity that described logical block has can be divided into the life-span of presetting the flash memory device that a shelves selects needs to improve for user, such as, suppose that the capacity that described logical block has is 4G, described logical block is divided into 3 shelves, be respectively 1 grade of 3.5G, 2 grades of 3.0G, 3 grades of 2.5G, the corresponding life-span increased is respectively 1 year, 2 years, 3 years, if user selects 1 grade of life-span promoted as described flash memory device, the quantity needing logical block to be set to backup block is then determined according to the capacity of each logical block, then according to the logical block quantity determined, the logical block of quantification in the logical block of described flash memory device is set to backup block, accordingly, the memory capacity that the logical block being converted to backup block described in the memory capacity reduced is has, in like manner, if user selects 2 or 3 grades of life-spans promoted as described flash memory device, the quantity needing logical block to be set to backup block is then determined according to the capacity of each logical block, then according to the logical block quantity determined, the logical block of quantification in the logical block of described flash memory device is set to backup block, accordingly, the memory capacity reduced is the memory capacity that the logical block that is converted to backup block has.
The present embodiment is by when the memory module determining described flash memory device is Large Copacity pattern, reserved backup block in described flash memory device is set to the logical block for storing data, thus improve the capacity of described flash memory device, or when determining that described memory module is stable mode, by the logical block in described memory storage devices is set to backup block, thus promote the serviceable life of flash memory device.
Further, 3rd embodiment of the management devices of flash memory device of the present invention is proposed, in the present embodiment, with reference to Fig. 8 based on above-mentioned first embodiment, when the described memory module determined is velocity mode, described adjusting module 30 comprises: acquiring unit 33 and converting unit 34.
Described acquiring unit 33, for obtaining the mode of operation that framework in described flash memory device is the logical block of multilevel-cell and the capacity had thereof, wherein, described mode of operation comprises SLC pattern and non-SLC pattern;
The working mode change of the logical block of the multilevel-cell corresponding to the capacity of adjustment, for the adjustment of capacity had according to the logical block of user to described multilevel-cell, is SLC pattern by described converting unit 34.
Described framework each storage unit (cell) that to be the logical block of multilevel-cell be in described logical block can store the logical block of multidigit (bit) information, comprise the logical block of two layer unit, the logical block of three-layer unit, the logical block etc. of four layer unit, the i.e. logical block of 2bit/cell, 3bit/cell, 4bit/cell etc.The mode of operation of the logical block of described multilevel-cell comprises SLC pattern and non-SLC pattern, described SLC pattern is the pattern that each storage unit (cell) in logical block stores a data, this pattern has the advantages that capacity is little, speed fast, long service life, stability are high, described non-SLC pattern comprises MLC pattern, TLC pattern etc., and MLC pattern has the advantages that capacity is moderate, speed is slow, serviceable life is medium and data are more stable; TLC pattern has the advantages that capacity is large, speed is slow, serviceable life is short and data are unstable.After the mode of operation of logical block getting the multilevel-cell in described memory device, the mode of operation that described framework is the logical block of multilevel-cell can be adjusted, be the working mode change of the logical block of non-SLC pattern by mode of operation in the logical block of described multilevel-cell be SLC pattern, memory module by the cell stores long numeric data in the logical block of multilevel-cell changes the memory module storing a data into, thus the life-span of improving described flash memory device, the speed read and write data and stability.Concrete, if the described memory module determined is velocity mode, then when be the working mode change of logical block of non-SLC pattern by mode of operation in the logical block of described multilevel-cell being SLC pattern, need be only SLC pattern by the working mode change of the partial logic block of non-SLC pattern, the adjustment of the capacity that the quantity of the logical block of concrete conversion can have according to the logical block of user to described multilevel-cell is determined, after the logical block quantity determining the multilevel-cell changed, be SLC pattern by the working mode change of the logical block of quantification in the logical block of multilevel-cell, if the described memory module determined is overstable fast mode, then when be the working mode change of logical block of non-SLC pattern by mode of operation in the logical block of described multilevel-cell being SLC pattern, need be SLC pattern by the working mode change of all logical blocks of non-SLC pattern.
The present embodiment by determine described memory module be velocity mode or overstable fast mode time, SLC pattern is set to by the mode of operation of the logical block by the multilevel-cell in described memory storage devices, thus the speed improving serviceable life of flash memory device, stability and read and write data.
The invention described above embodiment sequence number, just to describing, does not represent the quality of embodiment.Through the above description of the embodiments, those skilled in the art can be well understood to the mode that above-described embodiment method can add required general hardware platform by software and realize, hardware can certainly be passed through, but in a lot of situation, the former is better embodiment.Based on such understanding, technical scheme of the present invention can embody with the form of software product the part that prior art contributes in essence in other words, this computer software product is stored in a storage medium (as ROM/RAM, magnetic disc, CD), comprising some instructions in order to make a station terminal equipment (can be mobile phone, computing machine, server, air conditioner, or the network equipment etc.) perform method described in each embodiment of the present invention.
These are only the preferred embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every utilize instructions of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (10)
1. a management method for flash memory device, is characterized in that, the management method of described flash memory device comprises the following steps:
Receive memory module switching command, and determine the memory module of the described flash memory device after switching according to described memory module switching command;
The memory capacity of described memory module to described flash memory device according to determining adjusts accordingly.
2. the management method of flash memory device as claimed in claim 1, it is characterized in that, when the described memory module determined is Large Copacity pattern, the described described memory module according to determining comprises the step that the memory capacity of described flash memory device carries out corresponding adjustment:
Determine the capacity that the backup block of described flash memory device has;
According to the adjustment of user to the capacity that described backup block has, the backup block corresponding to the capacity of adjustment is set to logical block.
3. the management method of flash memory device as claimed in claim 1, it is characterized in that, when the described memory module determined is stable mode, the described described memory module according to determining comprises the step that the memory capacity of described flash memory device carries out corresponding adjustment:
Determine the capacity that the logical block of described flash memory device has;
According to the adjustment of user to the capacity that described logical block has, the logical block corresponding to the capacity of adjustment is set to backup block.
4. the management method of flash memory device as claimed in claim 1, it is characterized in that, when the described memory module determined is velocity mode, the described described memory module according to determining comprises the step that the memory capacity of described flash memory device carries out corresponding adjustment:
Obtain the mode of operation that framework in described flash memory device is the logical block of multilevel-cell and the capacity had thereof, wherein, described mode of operation comprises SLC pattern and non-SLC pattern;
According to the adjustment of the capacity that the logical block of user to described multilevel-cell has, be SLC pattern by the working mode change of the logical block of the multilevel-cell corresponding to the capacity of adjustment.
5. the management method of flash memory device as claimed in claim 1, it is characterized in that, when the described memory module determined is overstable fast mode, the described described memory module according to determining comprises the step that the memory capacity of described flash memory device carries out corresponding adjustment:
Obtaining framework in described flash memory device is the mode of operation of the logical block of multilevel-cell, and wherein, described mode of operation comprises SLC pattern and non-SLC pattern;
Be the working mode change of all logical blocks of non-SLC pattern by mode of operation in the logical block of described multilevel-cell be SLC pattern.
6. a management devices for flash memory device, is characterized in that, the management devices of described flash memory device comprises:
Receiver module, for receiving memory module switching command;
Determination module, for determining the memory module of the described flash memory device after switching according to described memory module switching command;
Adjusting module, for adjusting accordingly according to the memory capacity of described memory module to described flash memory device determined.
7. the management devices of flash memory device as claimed in claim 6, it is characterized in that, when the described memory module determined is Large Copacity pattern, described adjusting module comprises:
Determining unit, for determining the capacity that the backup block of described flash memory device has;
Setting unit, for according to the adjustment of user to the capacity that described backup block has, is set to logical block by the backup block corresponding to the capacity of adjustment.
8. the management devices of flash memory device as claimed in claim 7, it is characterized in that, when the described memory module determined is stable mode, described determining unit, also for determining the capacity that the logical block of described flash memory device has;
Described setting unit, also for according to the adjustment of user to the capacity that described logical block has, is set to backup block by the logical block corresponding to the capacity of adjustment.
9. the management devices of flash memory device as claimed in claim 6, it is characterized in that, when the described memory module determined is velocity mode, described adjusting module comprises:
Acquiring unit, for obtaining the mode of operation that framework in described flash memory device is the logical block of multilevel-cell and the capacity had thereof, wherein, described mode of operation comprises SLC pattern and non-SLC pattern;
The working mode change of the logical block of the multilevel-cell corresponding to the capacity of adjustment, for the adjustment of capacity had according to the logical block of user to described multilevel-cell, is SLC pattern by converting unit.
10. the management devices of flash memory device as claimed in claim 9, it is characterized in that, when the described memory module determined is overstable fast mode, described acquiring unit, be also the mode of operation of the logical block of multilevel-cell for obtaining framework in described flash memory device, wherein, described mode of operation comprises SLC pattern and non-SLC pattern;
Described converting unit is also SLC pattern for being the working mode change of all logical blocks of non-SLC pattern by mode of operation in the logical block of described multilevel-cell.
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