CN109307831A - The TDDB test method of grid oxic horizon in integrated circuit - Google Patents
The TDDB test method of grid oxic horizon in integrated circuit Download PDFInfo
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- CN109307831A CN109307831A CN201811114610.9A CN201811114610A CN109307831A CN 109307831 A CN109307831 A CN 109307831A CN 201811114610 A CN201811114610 A CN 201811114610A CN 109307831 A CN109307831 A CN 109307831A
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- grid oxic
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
- G01R31/2603—Apparatus or methods therefor for curve tracing of semiconductor characteristics, e.g. on oscilloscope
Abstract
The present invention relates to a kind of TDDB test methods of grid oxic horizon in integrated circuit.The test method carries out disruptive field intensity determined by ramp voltage test to the grid oxic horizon the following steps are included: obtaining；TDDB test is carried out to the grid oxic horizon in the case where testing electric field, obtains breakdown time；Electric field acceleration factor is determined according to the ramp rate of the ramp voltage test, the disruptive field intensity, the breakdown time and the test electric field strength；And the service life of the grid oxic horizon is calculated using the electric field acceleration factor.
Description
Technical field
The present invention relates to grid oxic horizons in a kind of reliability test of semiconductor devices more particularly to integrated circuit
TDDB (Time-Dependent Dielectric Breakdown, time correlation dielectric breakdown) test method.
Background technique
In IC manufacturing, grid oxic horizon (Gate Oxide) is most important part in basic unit device,
The superiority and inferiority of quality determines the performance of device.
The method that reliability about grid oxic horizon is estimated includes ramp voltage (Voltage ramp) test and time
Associated media punctures (TDDB) test, hereinafter referred to as Vramp test and TDDB test.Vramp test and TDDB can be passed through
Test makes assessment to the reliability of grid oxic horizon.However certain methods will obtain the longevity of grid oxic horizon in integrated circuit
Life needs to carry out 3 groups of TDDB tests (3E) using 3 kinds of different electric field strengths, this needs a large amount of time.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of TDDB test method of grid oxic horizon in integrated circuit,
The testing time can significantly be shortened.
The present invention the technical solution adopted is that proposes gate oxidation in a kind of integrated circuit to solve above-mentioned technical problem
The TDDB test method of layer, comprising the following steps: obtain and the grid oxic horizon hit determined by ramp voltage test
Wear field strength；TDDB test is carried out to the grid oxic horizon in the case where testing electric field, obtains breakdown time；According to the ramp voltage
The ramp rate of test, the disruptive field intensity, the breakdown time and the test electric field strength determine electric field acceleration factor；With
And the service life of the grid oxic horizon is calculated using the electric field acceleration factor.
In one embodiment of this invention, the disruptive field intensity is the average breakdown field determining according to disruptive field intensity distribution
By force.
In one embodiment of this invention, TDDB test is carried out to the grid oxic horizon in the case where testing electric field, is hit
The step of wearing the time includes: the breakdown time distribution obtained under the test electric field；And it is distributed according to the breakdown time
Determine the breakdown time.
In one embodiment of this invention, it obtains in the step of being distributed the breakdown time under the test electric field, obtains
Breakdown time distribution under single test electric field strength.
In one embodiment of this invention, the breakdown time is distributed as Weibull distribution.
In one embodiment of this invention, according to the ramp rate of the ramp voltage test, the disruptive field intensity, described hit
It wears the time and the test electric field strength determines the formula of electric field acceleration factor are as follows: TF=γ Rexp [γ (Ebd- E)],
Wherein TF is the breakdown time, and γ is the electric field acceleration factor, and R is the ramp rate, EbdFor the disruptive field intensity, E is
The test electric field strength.
The present invention due to using the technology described above, only need to can determine electric field acceleration factor γ by 1 group of TDDB test,
Substantially reduce the testing time.In contrast, the method for some references needs to carry out 3 groups by 3 kinds of different electric field strengths
TDDB test (3E) just can determine that electric field acceleration factor γ.Especially, the present invention can select the shorter electricity of time test
Field intensity is tested, so as to shortening the testing time more significantly.
Detailed description of the invention
For the above objects, features and advantages of the present invention can be clearer and more comprehensible, below in conjunction with attached drawing to tool of the invention
Body embodiment elaborates, in which:
Fig. 1 is the TDDB test device schematic diagram of grid oxic horizon in the integrated circuit of one embodiment of the invention.
Fig. 2 is the TDDB test method flow chart of grid oxic horizon in the integrated circuit of one embodiment of the invention.
Fig. 3 is that Vramp according to an embodiment of the invention tests breakdown voltage distribution figure obtained.
Fig. 4 is that TDDB according to an embodiment of the invention tests breakdown time distribution map obtained.
Specific embodiment
For the above objects, features and advantages of the present invention can be clearer and more comprehensible, below in conjunction with attached drawing to tool of the invention
Body embodiment elaborates.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
It is different from other way described herein using other and implements, therefore the present invention is by the limit of following public specific embodiment
System.As shown in the application and claims, unless context clearly prompts exceptional situation, " one ", "one", "an"
And/or the words such as "the" not refer in particular to odd number, may also comprise plural number.It is, in general, that term " includes " only prompted with "comprising" include
Clearly identify the step of and element, and these steps and element do not constitute one it is exclusive enumerate, method or apparatus
The step of may including other or element.
It should be understood that can refer to straight when unit or module are described as " connecting " other units, module or block
It connects in succession, is perhaps communicated with other units, module or block or there may be intermediate unit, module or blocks, unless context
Clearly indicate other way.Term as used herein "and/or" may include one or more correlations list any of project with
All combinations.
The embodiment of the present invention describes semiconductor devices, such as the method for testing reliability of grid oxic horizon, especially grid
The TDDB test method of pole oxide layer.Reliability test generally includes Vramp test and TDDB test.Vramp test method are as follows:
One group of sample is selected, applies ramp voltage on grid oxic horizon, until the gate oxidation punctures, at this time in the grid oxic horizon
The voltage of upper application is the breakdown voltage of the grid oxic horizon；By such one group of breakdown voltage and industrial standard (common work
Industry standard is 2.3 times of operating voltage) it compares, determine whether surveyed grid oxic horizon by extrinsic factor is influenced (example
Such as particle contamination)；If breakdown voltage is greater than industrial standard, illustrate that surveyed grid oxic horizon meets ramp voltage test
Reliability requirement can use TDDB test at this time, determine the life characteristic of surveyed grid oxic horizon.
TDDB test method are as follows: apply TDDB on the need grid oxic horizon to be tested of semiconducter device testing structure and survey
Voltage is tried, the grid oxic horizon punctures after time t, scales using corresponding life model and area associated lifetime public
Formula calculates the time correlation dielectric breakdown time of the grid oxic horizon.
Fig. 1 is the TDDB test device schematic diagram of grid oxic horizon in the integrated circuit of one embodiment of the invention.With reference to Fig. 1
Shown, the test device 100 of the present embodiment may include power supply 110, multiple connection terminals 120, control equipment 130.Power supply 110 can
For applying test voltage.Connection terminal 120 connects the grid oxic horizon 11 of power supply 110 and tested semiconductor devices 10,
For applying a voltage to grid oxic horizon 11, test electric field is constituted.It, can be with although only showing 2 connection terminals in figure
Understand, depending on the quantity for the semiconductor devices 10 that the quantity of connection terminal 120 can test simultaneously as needed.In reality of the invention
It applies in example, semiconductor devices 10 can be memory, processor, hybrid device or other devices.
It controls equipment 130 and connects power supply, for controlling the progress of test process.For example, the test that power supply 110 exports
Voltage be it is variable, controlled by control equipment 130.Control equipment 130 can have microprocessor (MPU) 131 and memory 132.MPU
131 executable series of computation machine instructions are to implement control process.Memory 132 may be connected to MPU 131, aforementioned for storing
Computer instruction and test process in intermediate data and/or result data.In an example, control equipment 130 can
To be computer, such as personal computer, work station or server etc..
In an embodiment of the present invention, according to the configuration to control equipment 130, test device 100 can be used for partly being led
The reliability test of body device, such as Vramp test and/or TDDB test.
In Vramp test, the ramp voltage of certain ramp rate (Ramp Rate) R can be applied on grid oxic horizon 11,
Until grid oxic horizon 11 is breakdown, the voltage applied on grid oxic horizon 11 at this time is the breakdown potential of grid oxic horizon
Pressure.Fig. 3 is that Vramp according to an embodiment of the invention tests breakdown voltage distribution figure obtained.It, can for convenience of subsequent calculating
Breakdown voltage is converted into a series of disruptive field intensity Ebd, the distribution of these disruptive field intensities is typically compliant with Weibull distribution (Weibull
distribution).It can be distributed according to disruptive field intensity and determine average disruptive field intensity (Ebd63)。
The average disruptive field intensity obtained in Vramp test calculates the service life being used in TDDB test.
Fig. 2 is the TDDB test method flow chart of grid oxic horizon in the integrated circuit of one embodiment of the invention.Shown in Fig. 2
Method for example can be shown in Fig. 1 test device 100 in carry out, but not limited to this.Method shown in Fig. 2 can also be
It is carried out in other test devices.In some embodiments, a part of step in method shown in Fig. 2 can be by manually performing.Under
The TDDB test method of face description the present embodiment with reference to shown in Fig. 2.
In step 202, obtains and disruptive field intensity determined by Vramp test is carried out to grid oxic horizon.
In this step, it can get the disruptive field intensity of the grid oxic horizon determined after Vramp is tested.Disruptive field intensity example
It is such as the average disruptive field intensity Ebd63 determining according to disruptive field intensity distribution.
By taking the test device 100 of Fig. 1 as an example, control equipment 130 can carry out Vramp test in advance, determine average breakdown field
Strong Ebd63After be stored in memory 132.In this step, average disruptive field intensity E can be obtained from memory 132bd63。
In step 204, TDDB test is carried out to grid oxic horizon in the case where testing electric field, obtains breakdown time.
In this step, test voltage can be applied to grid oxic horizon, forms test electric field, the grid after time t
Pole oxide layer breakdown.By testing a series of available breakdown time distribution being made of breakdown time Tbd.Fig. 4 is basis
The TDDB of one embodiment of the invention tests breakdown time distribution map obtained.The distribution of these breakdown times is typically compliant with Wei
Uncle's distribution (Weibull distribution).It can be distributed according to breakdown time and determine average breakdown time (Tbd63).Separately
Outside, it can also determine that some other and service life calculates related parameter, such as corresponding Tbd at Weibull distribution probability 0.1%
Value Tbd0.1, weber dispersion degree (Weibull Slope) β.
By taking the test device 100 of Fig. 1 as an example, control 130 controllable power 110 of equipment carries out TDDB test, determines breakdown
Annual distribution.Microprocessor 131 in control equipment 130 can be stored in after operation obtains average breakdown time Tbd63 to be deposited
In reservoir 132.Microprocessor 131 also can get Tbd0.1 and β, and be stored in memory 132.
In step 206, according to the ramp rate of ramp voltage test, disruptive field intensity, breakdown time and test electric field strength
Determine electric field acceleration factor.
It in this step, can be according to previously obtained various parameters, such as the ramp rate R of ramp voltage test, disruptive field intensity
(with average disruptive field intensity Ebd63Represent), breakdown time is (with average breakdown time Tbd63Represent) and test electric field strength E, come
Determine electric field acceleration factor γ.
By taking the test device 100 of Fig. 1 as an example, the microprocessor 131 controlled in equipment 130 can be various according to what is obtained
Parameter calculates electric field acceleration factor γ, and can be reserved in memory 132.
In step 208, the service life of grid oxic horizon is calculated using electric field acceleration factor.
In this step, the service life that electric field acceleration factor γ calculates grid oxic horizon can be used.
By taking the test device 100 of Fig. 1 as an example, the microprocessor 131 controlled in equipment 130 can be various according to what is obtained
Parameter calculates service life of grid oxic horizon, including electric field acceleration factor γ, and calculated result can be stored in memory
In 132.Illustrative calculation formula are as follows:
Wherein Tbd0.1 is the value of corresponding Tbd at Weibull distribution probability 0.1%, β webers of dispersion degree (Weibull
Slope), EstrTo test electric field strength, EopFor applied electric field field strength, RatioareaFor the area ratio of chip and test structure.
Flow chart used herein is used to illustrate operation performed by method according to an embodiment of the present application.It should
Understand, before or operation below not necessarily accurately carry out in sequence.On the contrary, can be handled according to inverted order or simultaneously
Various steps.Step 202 as escribed above can carry out after step 204.Meanwhile or other operations are added to these mistakes
Cheng Zhong, or a certain step or number step operation are removed from these processes.
In this embodiment, it need to only apply single test voltage to grid oxic horizon in step 204, form single test electricity
Field field strength, then the breakdown time distribution under the single test electric field strength of detection.In step 206, can be surveyed according to ramp voltage
The ramp rate of examination, disruptive field intensity, breakdown time and test electric field strength calculate electric field acceleration factor γ.It is illustrative to calculate
Formula are as follows:
TF=γ Rexp [γ (Ebd-E)] (2)
Wherein TF is breakdown time, and γ is electric field acceleration factor, and R is ramp rate, EbdFor disruptive field intensity, E is test electric field
Field strength.
Principle using formula (2) is that the TDDB of the grid oxic horizon of thickness (Tox) > 4nm meets following E moulds
Type:
TF=A0·exp(-γE0x) (3)
TF represents breakdown time, A0For coefficient, γ represents electric field acceleration factor, and the natural logrithm and electric field of time is linear
Relationship, slope are electric field acceleration factor γ, and Eox is the electric field strength of grid oxic horizon.
If regarding Vramp test process as short time TDDB stress that multiple extra electric fields are gradually increased, can incite somebody to action
Vramp test is connected with TDDB test, obtains above-mentioned formula (2).
Electric field acceleration factor γ is the key parameter obtained in TDDB test.The method of some references is needed by 3 kinds not
Same electric field strength, which carries out 3 groups of TDDB tests (3E), just can determine that electric field acceleration factor γ.In contrast, the present embodiment need to only lead to
Crossing 1 group of TDDB test (1E) can determine electric field acceleration factor γ, substantially reduce the testing time.Especially, the present embodiment can
It is tested with selecting the shorter electric field strength of time test, so as to shorten the testing time more significantly.Such as
The present embodiment can by the testing time by being reduced within 38 hours 4 hours, about original 10%.
In an embodiment of the present invention, control equipment 130 is configured as realizing step 202-208.For example, micro process
The instruction of series of computation machine can be performed to realize step 202-208 in device 131.These computer instructions are storable in memory 132
In, and it is loaded into microprocessor 131 when needed.
The number of description ingredient, number of attributes is used in some embodiments, it should be appreciated that such to be used for embodiment
The number of description has used qualifier " about ", " approximation " or " generally " to modify in some instances.Unless in addition saying
It is bright, " about ", " approximation " or " generally " show the variation that the number allows to have ± 20%.Correspondingly, in some embodiments
In, numerical parameter used in description and claims is approximation, approximation feature according to needed for separate embodiment
It can change.In some embodiments, numerical parameter is considered as defined significant digit and using the reservation of general digit
Method.Although the Numerical Range and parameter in some embodiments of the application for confirming its range range are approximation, specific real
It applies in example, being set in for such numerical value is reported as precisely as possible in feasible region.
Meanwhile the application has used particular words to describe embodiments herein.Such as " one embodiment ", " one implements
Example ", and/or " some embodiments " mean a certain feature relevant at least one embodiment of the application, structure or feature.Cause
This, it should be highlighted that and it is noted that " embodiment " or " an implementation referred to twice or repeatedly in this specification in different location
Example " or " alternate embodiment " are not necessarily meant to refer to the same embodiment.In addition, in one or more embodiments of the application
Certain features, structure or feature can carry out combination appropriate.
The application has used particular words to describe embodiments herein.As " one embodiment ", " embodiment ",
And/or " some embodiments " means a certain feature relevant at least one embodiment of the application, structure or feature.Therefore, it answers
Emphasize and it is noted that " embodiment " or " one embodiment " that is referred to twice or repeatedly in this specification in different location or
" alternate embodiment " is not necessarily meant to refer to the same embodiment.In addition, certain in one or more embodiments of the application
Feature, structure or feature can carry out combination appropriate.
Although the present invention is described with reference to current specific embodiment, those of ordinary skill in the art
It should be appreciated that above embodiment is intended merely to illustrate the present invention, can also make in the case where no disengaging spirit of that invention
Various equivalent change or replacement out, therefore, as long as to the variation of above-described embodiment, change in spirit of the invention
Type will all be fallen in the range of following claims.
Claims (6)
1. the TDDB test method of grid oxic horizon in a kind of integrated circuit, comprising the following steps:
It obtains and disruptive field intensity determined by ramp voltage test is carried out to the grid oxic horizon；
TDDB test is carried out to the grid oxic horizon in the case where testing electric field, obtains breakdown time；
According to the ramp rate of the ramp voltage test, the disruptive field intensity, the breakdown time and the test electric field
It is strong to determine electric field acceleration factor；And
The service life of the grid oxic horizon is calculated using the electric field acceleration factor.
2. TDDB test method as described in claim 1, which is characterized in that the disruptive field intensity is to be distributed according to disruptive field intensity
Determining average disruptive field intensity.
3. TDDB test method as described in claim 1, which is characterized in that in the case where testing electric field to the grid oxic horizon into
Row TDDB test, obtain breakdown time the step of include:
Obtain the breakdown time distribution under the test electric field；And
The breakdown time is determined according to breakdown time distribution.
4. TDDB test method as claimed in claim 3, which is characterized in that obtain the breakdown time under the test electric field
In the step of distribution, the breakdown time distribution under single test electric field strength is obtained.
5. TDDB test method as claimed in claim 3, which is characterized in that the breakdown time is distributed as Weibull distribution.
6. TDDB test method as described in claim 1, which is characterized in that according to the ramp rate of the ramp voltage test,
The disruptive field intensity, the breakdown time and the test electric field strength determine the formula of electric field acceleration factor are as follows:
TF=γ Rexp [γ (Ebd-E)]
Wherein TF is the breakdown time, and γ is the electric field acceleration factor, and R is the ramp rate, EbdFor the disruptive field intensity,
E is the test electric field strength.
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Cited By (1)
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| CN112447258A (en) * | 2019-09-05 | 2021-03-05 | 上海交通大学 | Method and system for measuring intrinsic breakdown time of flash memory device |
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