CN109300935A - Oled面板的制作方法、临时配对结构 - Google Patents
Oled面板的制作方法、临时配对结构 Download PDFInfo
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- CN109300935A CN109300935A CN201710611018.9A CN201710611018A CN109300935A CN 109300935 A CN109300935 A CN 109300935A CN 201710611018 A CN201710611018 A CN 201710611018A CN 109300935 A CN109300935 A CN 109300935A
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- vapor deposition
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 364
- 238000007740 vapor deposition Methods 0.000 claims abstract description 268
- 239000003292 glue Substances 0.000 claims abstract description 143
- 238000004020 luminiscence type Methods 0.000 claims description 163
- 238000000034 method Methods 0.000 claims description 86
- 239000000463 material Substances 0.000 claims description 73
- 239000010408 film Substances 0.000 claims description 72
- 238000001704 evaporation Methods 0.000 claims description 32
- 230000008020 evaporation Effects 0.000 claims description 32
- 239000011521 glass Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000005286 illumination Methods 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 9
- 239000003086 colorant Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910004541 SiN Inorganic materials 0.000 claims description 6
- 229910004166 TaN Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 6
- 238000004026 adhesive bonding Methods 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 73
- 239000000243 solution Substances 0.000 description 35
- 238000004140 cleaning Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000011368 organic material Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000003760 hair shine Effects 0.000 description 5
- 238000001723 curing Methods 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005381 potential energy Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (25)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710611018.9A CN109300935B (zh) | 2017-07-25 | 2017-07-25 | Oled面板的制作方法、临时配对结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710611018.9A CN109300935B (zh) | 2017-07-25 | 2017-07-25 | Oled面板的制作方法、临时配对结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109300935A true CN109300935A (zh) | 2019-02-01 |
CN109300935B CN109300935B (zh) | 2020-10-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201710611018.9A Active CN109300935B (zh) | 2017-07-25 | 2017-07-25 | Oled面板的制作方法、临时配对结构 |
Country Status (1)
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CN (1) | CN109300935B (zh) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1522098A (zh) * | 2002-12-03 | 2004-08-18 | 精工爱普生株式会社 | 掩模蒸镀方法及装置、掩模及其制造方法、显示板制造装置 |
CN1883820A (zh) * | 2005-06-23 | 2006-12-27 | 精工爱普生株式会社 | 颜色要素的形成方法、电光学装置的制造方法、电光学装置及电子机器 |
JP2008196029A (ja) * | 2007-02-15 | 2008-08-28 | Seiko Epson Corp | 蒸着用マスクの製造方法および蒸着用マスク |
JP2014026906A (ja) * | 2012-07-30 | 2014-02-06 | Canon Inc | 表示装置及びその製造方法 |
CN103864009A (zh) * | 2014-03-11 | 2014-06-18 | 中国电子科技集团公司第五十五研究所 | 利用介质膜掩膜板实现具有斜坡状边缘金属薄膜图形方法 |
CN105518877A (zh) * | 2015-08-18 | 2016-04-20 | 歌尔声学股份有限公司 | 微发光二极管的预排除方法、制造方法、装置和电子设备 |
CN105633301A (zh) * | 2014-11-17 | 2016-06-01 | 上海和辉光电有限公司 | 一种降低oled混色缺陷的方法及oled显示面板 |
CN106816456A (zh) * | 2016-12-16 | 2017-06-09 | 上海天马微电子有限公司 | 一种有机发光二极管显示面板及显示器 |
-
2017
- 2017-07-25 CN CN201710611018.9A patent/CN109300935B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1522098A (zh) * | 2002-12-03 | 2004-08-18 | 精工爱普生株式会社 | 掩模蒸镀方法及装置、掩模及其制造方法、显示板制造装置 |
CN1883820A (zh) * | 2005-06-23 | 2006-12-27 | 精工爱普生株式会社 | 颜色要素的形成方法、电光学装置的制造方法、电光学装置及电子机器 |
JP2008196029A (ja) * | 2007-02-15 | 2008-08-28 | Seiko Epson Corp | 蒸着用マスクの製造方法および蒸着用マスク |
JP2014026906A (ja) * | 2012-07-30 | 2014-02-06 | Canon Inc | 表示装置及びその製造方法 |
CN103864009A (zh) * | 2014-03-11 | 2014-06-18 | 中国电子科技集团公司第五十五研究所 | 利用介质膜掩膜板实现具有斜坡状边缘金属薄膜图形方法 |
CN105633301A (zh) * | 2014-11-17 | 2016-06-01 | 上海和辉光电有限公司 | 一种降低oled混色缺陷的方法及oled显示面板 |
CN105518877A (zh) * | 2015-08-18 | 2016-04-20 | 歌尔声学股份有限公司 | 微发光二极管的预排除方法、制造方法、装置和电子设备 |
CN106816456A (zh) * | 2016-12-16 | 2017-06-09 | 上海天马微电子有限公司 | 一种有机发光二极管显示面板及显示器 |
Also Published As
Publication number | Publication date |
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CN109300935B (zh) | 2020-10-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20191023 Address after: 201206 Shanghai, Pudong New Area, China (Shanghai) free trade zone, new Jinqiao Road, No. 13, building 2, floor 27 Applicant after: Shanghai Shiou Photoelectric Technology Co.,Ltd. Address before: 201206 6 building, 45 Jinhai Road, Pudong New Area, Shanghai, 1000 Applicant before: SEEYA INFORMATION TECHNOLOGY Co.,Ltd. |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200824 Address after: 230012 room a5-103, No.999, Wenzhong Road, Xinzhan District, Hefei City, Anhui Province Applicant after: Hefei Shiya Technology Co.,Ltd. Address before: 201206 Shanghai, Pudong New Area, China (Shanghai) free trade zone, new Jinqiao Road, No. 13, building 2, floor 27 Applicant before: Shanghai Shiou Photoelectric Technology Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Room a5-103, No.999, Wenzhong Road, Xinzhan District, Hefei City, Anhui Province, 230012 Patentee after: Vision Technology Co.,Ltd. Address before: Room a5-103, No.999, Wenzhong Road, Xinzhan District, Hefei City, Anhui Province, 230012 Patentee before: Hefei Shiya Technology Co.,Ltd. |