CN109300850A - A kind of blue-ray LED epitaxial structure and preparation method - Google Patents

A kind of blue-ray LED epitaxial structure and preparation method Download PDF

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CN109300850A
CN109300850A CN201811016485.8A CN201811016485A CN109300850A CN 109300850 A CN109300850 A CN 109300850A CN 201811016485 A CN201811016485 A CN 201811016485A CN 109300850 A CN109300850 A CN 109300850A
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layer
gan
ingan
low temperature
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张雷城
展望
芦玲
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Huaian Aucksun Optoelectronics Technology Co Ltd
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Huaian Aucksun Optoelectronics Technology Co Ltd
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

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Abstract

The invention belongs to GaN base LED epitaxial growth techniques field, a kind of blue-ray LED epitaxial structure and preparation method.A kind of blue-ray LED epitaxial structure, ALGaN low temperature buffer layer, 3D low temperature GaN roughened layer, u-shaped Gan lattice retrieving layer, N-shaped Gan electronic active layer, InGan/Gan superlattices luminescent layer, p-type AlGan electronic barrier layer and the hole the p-type Gan active layer successively grown including Sapphire Substrate and thereon；Compared with the Gan LED of the prior art, potential barrier Gan material with more high-crystal quality, defects count is low, the InGan potential well material of replacement can be obtained on the Gan barrier layer of high quality, more preferable InGan/Gan superlattices luminescent layer is namely obtained, therefore obtains the LED epitaxial material of Low dark curient high brightness.

Description

A kind of blue-ray LED epitaxial structure and preparation method
Technical field
The invention belongs to GaN base LED epitaxial growth techniques field more particularly to a kind of blue-ray LED epitaxial structure and Preparation method.
Background technique
LED chip industry competition is increasingly fierce, and the properties of LED also make rapid progress.Each LED producer all increases LED The Innovation Input of extension and chip actively updates prior art technology, the main light efficiency and antistatic effect for improving LED chip. The technology level of LED directly affects the occupation rate of market and profitability of each producer.The basis of blue-light LED chip is GaN Base epitaxial wafer.N metal electrode is made on GaN base epitaxial wafer and p metal electrode obtains LED chip.Therefore have high quality high The LED epitaxial wafer of light efficiency is the key foundation of high photosynthetic efficiency highly resistance electric energy power LED chip.
Blue-ray LED epitaxial structure mainly includes low temperature buffer buffer layer, 3D low temperature roughened layer, u-shaped Gan currently on the market Lattice retrieving layer, N-shaped Gan electronic active layer, InGan/Gan superlattices luminescent layer, p-type AlGan electronic barrier layer, p-type Gan are empty Cave active layer.Wherein InGan/Gan superlattices luminescent layer, that is, potential well, that is, Quantum Well of mqw layer and the thickness proportion of potential barrier, lattice Stress mismatch and crystal quality etc. have a major impact the luminescent properties of blue-ray LED.InGan/Gan superlattices hair by optimization Photosphere, can obtain low-voltage, Low dark curient, high brightness blue-ray LED.InGan/Gan superlattices luminescent layer includes Quantum Well InGan and potential barrier Gan, the two alternating growth, periodicity 6 to 15 are differed.Quantum-well materials is InGan, wherein In component pair Temperature and H2Gas is very sensitive.If quantum trap growth temperature, which crosses high In ingredient, can be enriched with generation uneven distribution, while In component Content can also be reduced, and cause LED emission wavelength partially short.Logical H2It is smooth that preferable surface can be obtained under the conditions of gas, crystal quality Good GaN material.But if H is flowed into during quantum trap growth2Gas, In component hardly enter Gan, can not grow InGan material.As previously described, Quantum Well can only be in no H2Gas and compared with being grown under the conditions of low temperature, due to Quantum Well InGan and The temperature of potential barrier Gan, the two alternating growth, the growth of potential barrier cannot be too high, and otherwise Quantum Well will receive influence.The gesture of high quality Build the key factor of Gan layers and LED luminescent properties.
Summary of the invention
The limitation for the factors that the present invention is faced for the above-mentioned potential barrier GaN layer for growing high quality, proposes one kind The growth pattern of novel potential barrier GaN layer.Utilize H2Influence to Gan or InGan material morphology and quality, by barrier layer Gan Material is divided into n sections of difference N2/H2The growth conditions of ratio obtains the potential barrier Gan material of high quality.
Technical solution of the present invention:
A kind of blue-ray LED epitaxial structure, the ALGaN low temperature buffer layer successively grown including Sapphire Substrate and thereon, 3D low temperature GaN roughened layer, u-shaped Gan lattice retrieving layer, N-shaped Gan electronic active layer, InGan/Gan superlattices luminescent layer, p-type AlGan electronic barrier layer and the hole p-type Gan active layer；
The Grown on Sapphire Substrates has ALGaN low temperature buffer layer, grows 3D low temperature on ALGaN low temperature buffer layer GaN roughened layer grows the GaN layer i.e. u-shaped Gan lattice retrieving layer for having high temperature not mix Si on 3D low temperature GaN roughened layer, in u-shaped Gan The N-shaped Gan i.e. N-shaped electronic active layer for having high temperature to mix Si is grown in lattice retrieving layer, grows InGan/ on N-shaped electronic active layer Gan superlattices luminescent layer, growing P-type AlGan electronic barrier layer on InGan/Gan superlattices luminescent layer, the resistance of p-type AlGan electronics The hole growing P-type Gan active layer p in barrier；
The Sapphire Substrate group is divided into Al2O3；
The AlGaN low temperature buffer layer with a thickness of 20-30nm；
The 3D low temperature GaN roughened layer with a thickness of 0.2-0.5 μm；
The u-shaped Gan lattice retrieving layer is undoped GaN, with a thickness of 1.5-3.5 μm；
The N-shaped Gan electronic active layer, with a thickness of 2-4.5 μm, the doping concentration of Si in N-shaped Gan electronic active layer It is 5 × 1018-2×1020/cm-3；
The InGan/Gan superlattices luminescent layer includes potential well layer and barrier layer, and potential well layer is InGan material, thickness For 2-4nm, barrier layer is Gan material, with a thickness of 8-15nm, period 6-15；
The p-type AlGan electronic barrier layer, with a thickness of 20-60nm；Mixed with Al and Mg component；
The hole p-type Gan active layer, with a thickness of 15-45nm, wherein the doping concentration of Mg is 1 × 1017-2×1021/cm-3。
It is temperature and H that the raw mode of the New LED barrier layer, which mainly changes growth conditions,2/N2Ratio.The increasing of H2 flow Add for improving potential barrier Gan layer crystal weight and preferable smooth surface；Although the raising of growth temperature is equally advantageous for mentioning High potential barrier Gan layer crystal weight, but the growth temperature of the Gan barrier layer improved influences whether the In group in InGan potential well layer Part distribution is so as to cause luminous efficiency decline；Since InGan/Gan superlattices luminescent layer is InGan potential well and Gan potential barrier alternating The structure of growth, InGan potential well layer must be in low temperature without H2Under conditions of grow, so the Gan grown on InGan potential well Barrier layer cannot use and be passed through more H2Growth pattern with liter compared with multi-temperature.The novel Gan barrier layer of the present invention uses ladder Segmented growth pattern, the part Gan barrier layer that will be close to InGan potential well layer take obstructed H2Conditioned growth, Gan later Barrier layer leads to H2Amount is stepped up, and temperature gradually reduces, and under the premise of reducing the influence to InGan potential well layer, is obtained high-quality The Gan barrier layer of amount, thus obtain low-voltage, Low dark curient, high brightness blue-ray LED epitaxial wafer.
Beneficial effects of the present invention: preparation method of the invention, using metal-organic chemical vapor deposition equipment (MOCVD) Method, by the prior art, successively low temperature buffer buffer layer, 3D low temperature roughened layer, u-shaped Gan are brilliant on sapphire or silicon carbide substrates Lattice retrieving layer, N-shaped Gan electronic active layer, InGan/Gan superlattices luminescent layer, p-type AlGan electronic barrier layer, the hole p-type Gan Active layer；It is divided into n sections of B1...Bn ladder segmented growth patterns using Gan layers of potential barrier, wherein B1 is closest to Quantum Well InGan, It is successively B2, B3.....Bn, (the wherein range 2-15 of n), the N of difference segmentation inflow different proportion later2/H2.With existing skill The Gan LED of art is compared, and the potential barrier Gan material with more high-crystal quality, defects count is low, in the Gan barrier layer of high quality On can obtain the InGan potential well material of replacement, that is, obtain more preferable InGan/Gan superlattices luminescent layer, therefore obtain The LED epitaxial material of Low dark curient high brightness.
Specific embodiment
Below in conjunction with technical solution, a specific embodiment of the invention is further illustrated.
Embodiment one:
It is grown according to the following steps using MOCVD:
(1) Sapphire Substrate 1 is put into the reaction chamber of MOCVD device, is heated to 1100 DEG C in a hydrogen atmosphere, processing 5 minutes；
(2) 550 DEG C of growing low temperature buffer buffer growth temperature, thickness 25nm in Sapphire Substrate 1；
(3) the growth 3D low temperature roughened layer 3 i.e. 3D on above-mentioned low temperature buffer layer 2,950 DEG C of growth temperature, 0.3 μm of thickness；
(4) the GaN layer i.e. u-shaped Gan lattice retrieving layer for having high temperature not mix Si is grown on above-mentioned 3D low temperature roughened layer 3, it is raw Long temperature is 1080 DEG C, 2.5 μm of growth thickness；
(5) the N-shaped Gan i.e. electronic active layer that high temperature mixes Si, growth temperature 1100 are grown in u-shaped Gan lattice retrieving layer 4 DEG C, mixing Si concentration is 1*E+19, with a thickness of 4um；
(6) grown on N-shaped Gan5, InGan/Gan superlattices luminescent layer, include potential well layer and barrier layer, periodicity 15, It is 770 degree that wherein potential well layer, which is InGaN Material growth temperature, and with a thickness of 3.5nm, barrier layer is Gan material, and Gan layers of potential barrier are divided At 4 sections of B1, B2, B3 and B4, every section of 3nm amounts to 12nm, and every section of growth conditions is respectively as follows:
B1: temperature: 830 DEG C+30 DEG C, N2Tolerance: 90L/min, H2Amount: 0L/min；
B2: temperature: 830 DEG C+25 DEG C, N2Tolerance: 60L/min, H2Amount: 30L/min；
B3: temperature: 830 DEG C+20 DEG C, N2Tolerance: 45L/min, H2Amount: 45L/min；
B4: temperature: 830 DEG C+15 DEG C, N2Tolerance: 0L/min, H2Amount: 90L/min；
(7) the growing P-type AlGan electronic barrier layer on InGan/Gan superlattices luminescent layer, 950 DEG C of growth temperature, Mg mixes Miscellaneous concentration is 5 × 1015/cm-3, with a thickness of 40nm；
(8) the p-type GaN of high-temperature high concentration is grown in p-type AlGaN layer 7,980 DEG C of growth temperature, Mg doping concentration is 5 ×1020/cm-3, with a thickness of 20nm；
Compared with traditional structure, the LED made using the GaN base LED epitaxial wafer of this method has higher shine Efficiency, more low-leakage current, higher antistatic effect.
Embodiment two:
It is grown according to the following steps using MOCVD:
(1) Sapphire Substrate 1 is put into the reaction chamber of MOCVD device, is heated to 1100 DEG C in a hydrogen atmosphere, processing 5 minutes；
(2) 550 DEG C of growing low temperature buffer buffer growth temperature, thickness 25nm in Sapphire Substrate 1；
(3) the growth 3D low temperature roughened layer 3 i.e. 3D on above-mentioned low temperature buffer layer 2,950 DEG C of growth temperature, 0.3 μm of thickness；
(4) the GaN layer i.e. u-shaped Gan lattice retrieving layer for having high temperature not mix Si is grown on above-mentioned 3D low temperature roughened layer 3, it is raw Long temperature is 1080 DEG C, 2.5 μm of growth thickness；
(5) the N-shaped Gan i.e. electronic active layer that high temperature mixes Si, growth temperature 1100 are grown in u-shaped Gan lattice retrieving layer 4 DEG C, mixing Si concentration is 1*E+19, with a thickness of 4um；
(6) grown on N-shaped Gan5, InGan/Gan superlattices luminescent layer, include potential well layer and barrier layer, periodicity 15, It is 770 DEG C that wherein potential well layer, which is InGaN Material growth temperature, and with a thickness of 3.5nm, barrier layer is Gan material, and Gan layers of potential barrier are divided At 6 sections of B1, B2, B3, B4, B5 and B6, every section of 2nm amounts to 12nm, and every section of growth conditions is respectively as follows:
B1: temperature: 820 DEG C+45 DEG C, N2Tolerance: 100L/min, H2Amount: 0L/min；
B2: temperature: 820 DEG C+40 DEG C, N2Tolerance: 80L/min, H2Amount: 20L/min；
B3: temperature: 820 DEG C+35 DEG C, N2Tolerance: 60L/min, H2Amount: 40L/min；
B4: temperature: 820 DEG C+30 DEG C, N2Tolerance: 40L/min, H2Amount: 60L/min；
B5: temperature: 820 DEG C+25 DEG C, N2Tolerance: 20L/min, H2Amount: 80L/min；
B6: temperature: 820 DEG C+20 DEG C, N2Tolerance: 0L/min, H2Amount: 100L/min；
(7) the growing P-type AlGan electronic barrier layer on InGan/Gan superlattices luminescent layer, 950 DEG C of growth temperature, Mg mixes Miscellaneous concentration is 5 × 1015/cm-3, with a thickness of 40nm；
(8) the p-type GaN of high-temperature high concentration is grown in p-type AlGaN layer 7,980 DEG C of growth temperature, Mg doping concentration is 5 ×1020/cm-3, with a thickness of 20nm.

Claims (2)

1. a kind of blue-ray LED epitaxial structure, which is characterized in that the blue-ray LED epitaxial structure include Sapphire Substrate and ALGaN low temperature buffer layer, the 3D low temperature GaN roughened layer, u-shaped Gan lattice retrieving layer, N-shaped Gan electronic active successively grown thereon Layer, InGan/Gan superlattices luminescent layer, p-type AlGan electronic barrier layer and the hole p-type Gan active layer；
The Grown on Sapphire Substrates has ALGaN low temperature buffer layer, and growth 3D low temperature GaN is thick on ALGaN low temperature buffer layer Change layer, the GaN layer i.e. u-shaped Gan lattice retrieving layer for having high temperature not mix Si is grown on 3D low temperature GaN roughened layer, in u-shaped Gan lattice The N-shaped Gan i.e. N-shaped electronic active layer for having high temperature to mix Si is grown in retrieving layer, growth InGan/Gan is super on N-shaped electronic active layer Lattice luminescent layer, growing P-type AlGan electronic barrier layer on InGan/Gan superlattices luminescent layer, on p-type AlGan electronic barrier layer The hole growing P-type Gan active layer p；
The Sapphire Substrate group is divided into Al2O3；
The AlGaN low temperature buffer layer with a thickness of 20-30nm；
The 3D low temperature GaN roughened layer with a thickness of 0.2-0.5 μm；
The u-shaped Gan lattice retrieving layer is undoped GaN, with a thickness of 1.5-3.5 μm；
The N-shaped Gan electronic active layer, with a thickness of 2-4.5 μm, wherein the doping concentration of Si is 5 × 1018-2×1020/ cm-3；
The InGan/Gan superlattices luminescent layer includes potential well layer and barrier layer, and potential well layer is InGan material, with a thickness of 2- 4nm；Barrier layer is Gan material, with a thickness of 8-15nm；Period is 6-15；
The p-type AlGan electronic barrier layer, with a thickness of 20-60nm；Mixed with Al and Mg component；
The hole p-type Gan active layer, with a thickness of 15-45nm, wherein the doping concentration of Mg is 1 × 1017-2×1021/cm-3。
2. a kind of preparation method of blue-ray LED epitaxial structure, which is characterized in that steps are as follows:
(1) Sapphire Substrate is put into the reaction chamber of MOCVD device, is heated to 1100 DEG C in a hydrogen atmosphere, handle 5 points Clock；
(2) on a sapphire substrate grow ALGaN low temperature buffer layer, 550 DEG C of growth temperature；
(3) the growth 3D low temperature GaN roughened layer on above-mentioned ALGaN low temperature buffer layer, 950 DEG C of growth temperature；
(4) growth has u-shaped Gan lattice retrieving layer on above-mentioned 3D low temperature GaN roughened layer, and growth temperature is 1080 DEG C；
(5) growing n-type Gan electronic active layer in u-shaped Gan lattice retrieving layer, growth temperature are 1100 DEG C；
(6) InGan/Gan superlattices luminescent layer is grown on N-shaped Gan electronic active layer, includes potential well layer and barrier layer, wherein gesture Well layer is that InGaN Material growth temperature is 770 DEG C；Barrier layer is Gan material, and Gan layers of potential barrier are divided into multistage, and temperature is at 855 DEG C On the basis of successively cooling growth, N2Flow drop to 0, H by 100L/min gradient2Flow 100L/ is risen to by 0 gradient min；
(7) the growing P-type AlGan electronic barrier layer on InGan/Gan superlattices luminescent layer, 950 DEG C of growth temperature；
(8) in p-type AlGaN layer 7 grow high-temperature high concentration p-type GaN, 980 DEG C of growth temperature.
CN201811016485.8A 2018-09-03 2018-09-03 A kind of blue-ray LED epitaxial structure and preparation method Pending CN109300850A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113270525A (en) * 2021-04-30 2021-08-17 广东德力光电有限公司 Preparation method of green light epitaxial structure

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CN104538509A (en) * 2014-12-09 2015-04-22 圆融光电科技有限公司 Method for growing three-dimensional structural layer of light-emitting diode
CN104752568A (en) * 2013-12-26 2015-07-01 晶能光电（江西）有限公司 GaN-based LED epitaxial structure preparation method for improving the crystal quality
CN106876540A (en) * 2017-03-10 2017-06-20 太原理工大学 A kind of epitaxial growth method for improving GaN base LED internal quantum efficiency

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101980384A (en) * 2010-09-27 2011-02-23 湘能华磊光电股份有限公司 Gallium nitride-based III-V group compound semiconductor (light-emitting diode) LED epitaxial wafer and growing method thereof
CN104752568A (en) * 2013-12-26 2015-07-01 晶能光电（江西）有限公司 GaN-based LED epitaxial structure preparation method for improving the crystal quality
CN104538509A (en) * 2014-12-09 2015-04-22 圆融光电科技有限公司 Method for growing three-dimensional structural layer of light-emitting diode
CN106876540A (en) * 2017-03-10 2017-06-20 太原理工大学 A kind of epitaxial growth method for improving GaN base LED internal quantum efficiency

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113270525A (en) * 2021-04-30 2021-08-17 广东德力光电有限公司 Preparation method of green light epitaxial structure

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Application publication date: 20190201