CN109297620A - SOI base GaN pressure sensor and preparation method thereof - Google Patents
SOI base GaN pressure sensor and preparation method thereof Download PDFInfo
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- CN109297620A CN109297620A CN201811114543.0A CN201811114543A CN109297620A CN 109297620 A CN109297620 A CN 109297620A CN 201811114543 A CN201811114543 A CN 201811114543A CN 109297620 A CN109297620 A CN 109297620A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/005—Measuring force or stress, in general by electrical means and not provided for in G01L1/06 - G01L1/22
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Abstract
The present invention is suitable for pressure sensor technique field, provides a kind of SOI base GaN pressure sensor, including Si substrate；SiO2Oxide layer, positioned at the upper surface of Si substrate；Si top layer is located at SiO2The upper surface of oxide layer；GaN buffer layer, positioned at the upper surface of Si top layer；And pressure sensitive cells, positioned at the upper surface of GaN buffer layer；Wherein, position corresponding with pressure sensitive cells is equipped with cavity on Si substrate, and cavity runs through the upper and lower surfaces of Si substrate.It is GaN buffer layer on Si top layer, the design of different pressures range can be realized in the thickness by changing Si top layer；SiO2Oxide layer has etching self termination characteristic, when progress Si substrate etching prepares cavity, arrives SiO2Oxide layer can stop etching, and the thickness of GaN buffer layer and Si top layer can be precisely controlled with this, improve the stability of pressure sensor performance.
Description
Technical field
The invention belongs to pressure sensor technique field more particularly to a kind of SOI base GaN pressure sensor and its preparation sides
Method.
Background technique
GaN material has many advantages, such as electron concentration is high, electron mobility is high, Radiation hardness is strong, is based on GaN material
Pressure sensor can work in extremely complicated environment.Currently, the method that GaN material mainly passes through hetero-epitaxy obtains,
Substrate material mainly has sapphire, SiC and Si.Sapphire and SiC material have the chemical stability of superelevation, but its high material
It is widely applied can not also in material cost and microfabrication cost.Extension GaN material has been a kind of maturation on Si substrate
Technology and be widely used, but directly to Si base GaN carry out substrate etching, be unable to get the GaN layer of uniform ground, cause into
Product pressure sensor performance is unstable.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of SOI base GaN pressure sensor and preparation method thereof, to solve
It is unable to get the problem that the GaN layer of uniform ground causes finished pressure sensor performance unstable in the prior art.
In order to solve the above technical problems, the first aspect of the embodiment of the present invention provides a kind of SOI base GaN pressure sensing
Device, comprising:
Si substrate；
SiO2Oxide layer, positioned at the upper surface of the Si substrate；
Si top layer is located at the SiO2The upper surface of oxide layer；
GaN buffer layer, positioned at the upper surface of the Si top layer；With
Pressure sensitive cells, positioned at the upper surface of the GaN buffer layer；
Wherein, position corresponding with the pressure sensitive cells is equipped with cavity in the Si substrate, and the cavity runs through
The Si substrate.
Further, the Si substrate thickness is 0.3 millimeter to 1 millimeter.
Further, the GaN buffer layer thickness is 2 microns to 6 microns.
Further, the SiO2Oxidated layer thickness is 0.2 micron to 10 microns.
Further, the cavity on the Si substrate is etched by dry physical or prepared by wet chemical etch process
At.
The second aspect of the embodiment of the present invention provides a kind of preparation side of SOI base GaN pressure sensor described above
Method, comprising:
The SiO is prepared in the upper surface of the Si substrate2Oxide layer；
In the SiO2The upper surface of oxide layer prepares the Si top layer；
The GaN buffer layer is prepared in the upper surface of the Si top layer；
The barrier layer is prepared in the upper surface of the GaN buffer layer；
Pressure sensitive cells are prepared in the upper surface of the barrier layer；
Cavity is prepared on Si substrate position corresponding with the pressure sensitive cells, wherein the cavity runs through
The upper and lower surfaces of the Si substrate.
Further, the GaN buffer layer thickness is 2 microns to 6 microns.
Further, the barrier layer includes InAlGaN quaternary compound, InAlN/AlGaN/InGaN ternary compound
With one of AlN/InN binary compound or a variety of.
Further, the SiO2Oxidated layer thickness is 0.2 micron to 10 microns.
Further, the barrier layer thickness is 10 nanometers to 30 nanometers.
The beneficial effects of adopting the technical scheme are that the present invention devises a kind of SOI base GaN pressure sensing
Device is GaN buffer layer on Si top layer, and the design of different pressures range can be realized in the thickness by changing Si top layer；SiO2Oxygen
Changing layer has etching self termination characteristic, when progress Si substrate etching prepares cavity, arrives SiO2Oxide layer can stop etching, with this
It can be precisely controlled the thickness of GaN buffer layer and Si top layer, improve the stability of pressure sensor performance.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without any creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is SOI base GaN pressure sensor structure schematic diagram provided in an embodiment of the present invention；
Fig. 2 is SOI base GaN pressure sensor preparation method flow chart provided in an embodiment of the present invention；
Fig. 3 is SOI base GaN material structural schematic diagram provided in an embodiment of the present invention；
Fig. 4 is the structural representation that pressure sensitive cells are prepared on SOI base GaN material surface provided in an embodiment of the present invention
Figure.
In figure: 1, Si substrate；2,SiO2Oxide layer；3, Si top layer；4, GaN buffer layer；5, pressure sensitive cells；6, potential barrier
Layer.
Specific embodiment
In being described below, for illustration and not for limitation, the tool of such as particular system structure, technology etc is proposed
Body details, to understand thoroughly the embodiment of the present invention.However, it will be clear to one skilled in the art that there is no these specific
The present invention also may be implemented in the other embodiments of details.In other situations, it omits to well-known system, device, electricity
The detailed description of road and method, in case unnecessary details interferes description of the invention.
In order to illustrate technical solutions according to the invention, the following is a description of specific embodiments.
SOI base GaN pressure sensor as shown in Figure 1 includes Si substrate 1；SiO2Oxide layer 2, positioned at the upper table of Si substrate 1
Face；Si top layer 3 is located at SiO2The upper surface of oxide layer 2；GaN buffer layer 4, positioned at the upper surface of Si top layer 3；And presser sensor
Unit 5, positioned at the upper surface of GaN buffer layer 4；Wherein, position corresponding with pressure sensitive cells 5 is equipped with chamber in Si substrate 1
Body, cavity run through Si substrate 1.
It is GaN buffer layer 4 on Si top layer 3, setting for different pressures range can be realized in the thickness by changing Si top layer 3
Meter；SiO2Oxide layer 2 has etching self termination characteristic, when progress 1 etching of Si substrate prepares cavity, arrives SiO2Oxide layer 2 can stop
It only etches, the thickness of GaN buffer layer 4 and Si top layer 3 can be precisely controlled with this, improve the stability of pressure sensor performance.
In one embodiment of the present of invention, Si substrate 1 is with a thickness of 0.3 millimeter to 1 millimeter.
In one embodiment of the present of invention, GaN buffer layer 4 is with a thickness of 2 microns to 6 microns.
In one embodiment of the present of invention, SiO2Oxide layer 2 is with a thickness of 0.2 micron to 10 microns.
In one embodiment of the present of invention, the cavity on Si substrate 1 is etched by dry physical or wet chemical etching technique work
Skill is prepared.
As shown in Fig. 2, the invention discloses a kind of preparation methods of SOI base GaN pressure sensor, comprising:
Step S201 prepares SiO in the upper surface of Si substrate 12Oxide layer 2.
Step S202, in SiO2The upper surface of oxide layer 2 prepares Si top layer 3.
Step S203 prepares GaN buffer layer 4 in the upper surface of Si top layer 3.
Step S204 prepares barrier layer 6 in the upper surface of GaN buffer layer 4.
Step S205 prepares pressure sensitive cells 5 in the upper surface of barrier layer 6.
Step S206 prepares cavity on the position corresponding with pressure sensitive cells 5 of Si substrate 1, wherein cavity runs through Si
The upper and lower surfaces of substrate 1.
It is GaN buffer layer 4 on Si top layer 3, setting for different pressures range can be realized in the thickness by changing Si top layer 3
Meter；SiO2Oxide layer 2 has etching self termination characteristic, when progress 1 etching of Si substrate prepares cavity, arrives SiO2Oxide layer 2 can stop
It only etches, the thickness of GaN buffer layer 4 and Si top layer 3 can be precisely controlled with this, improve the stability of pressure sensor performance.
In one embodiment of the present of invention, barrier layer 6 includes being not limited in single-layer or multi-layer different component concentration
InAlGaN quaternary compound, the InAlN/AlGaN/InGaN ternary compound and AlN/InN of different component concentration.
In one embodiment of the present of invention, pressure sensitive cells 5 can be used it is any to pressure-sensitive device architecture, can be with
To be not limited in single HEMT devices, whiston bridge circuit, Schottky annular capacitor etc., technique
It is identical as general GaN preparation process.SiO2Oxide layer 2 will not react with Si material etch gas or corrosive liquid, can
To completely remove back side Si substrate 1 as stop layer, Si top layer 3 and GaN buffer layer 4 are only stayed, Si top layer 3 and GaN are slow
The thickness for rushing layer 4 available is accurately controlled.5 sensed pressure of pressure sensitive cells when work causes Si top layer 3 and GaN slow
Rushing layer 4, deformation occurs, which is converted into electrical signal output by pressure sensitive cells 5, realizes the sensing of pressure signal.
It is GaN buffer layer 4 on Si top layer 3, setting for different pressures range can be realized in the thickness by changing Si top layer 3
Meter；SiO2Oxide layer 2 has etching self termination characteristic, when progress 1 etching of Si substrate prepares cavity, arrives SiO2Oxide layer 2 can stop
It only etches, the thickness of GaN buffer layer 4 and Si top layer 3 can be precisely controlled with this, improve the stability of pressure sensor performance.
In one embodiment of the present of invention, SOI base GaN material from bottom to top successively includes Si substrate 11, SiO2Oxide layer
2, Si top layer 3, GaN buffer layer 4 and barrier layer 6.
In one embodiment of the present of invention, barrier layer 6 includes InAlGaN quaternary compound, InAlN/AlGaN/InGaN tri-
First compound and AlN/InN binary compound.
In one embodiment of the present of invention, GaN buffer layer 4 is with a thickness of 2 microns to 6 microns.
In one embodiment of the present of invention, barrier layer 6 includes InAlGaN quaternary compound, InAlN/AlGaN/InGaN tri-
One of first compound and AlN/InN binary compound are a variety of.
In one embodiment of the present of invention, SiO2Oxide layer 2 is with a thickness of 0.2 micron to 10 microns.
In one embodiment of the present of invention, barrier layer 6 is with a thickness of 10 nanometers to 30 nanometers.
Embodiment described above is merely illustrative of the technical solution of the present invention, rather than its limitations；Although referring to aforementioned reality
Applying example, invention is explained in detail, those skilled in the art should understand that: it still can be to aforementioned each
Technical solution documented by embodiment is modified or equivalent replacement of some of the technical features；And these are modified
Or replacement, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution should all
It is included within protection scope of the present invention.
Claims (10)
1. a kind of SOI base GaN pressure sensor characterized by comprising
Si substrate；
SiO2Oxide layer, positioned at the upper surface of the Si substrate；
Si top layer is located at the SiO2The upper surface of oxide layer；
GaN buffer layer, positioned at the upper surface of the Si top layer；With
Pressure sensitive cells, positioned at the upper surface of the GaN buffer layer；
Wherein, position corresponding with the pressure sensitive cells is equipped with cavity in the Si substrate, and the cavity is through described
Si substrate.
2. SOI base GaN pressure sensor according to claim 1, which is characterized in that the Si substrate thickness is 0.3 milli
Rice is to 1 millimeter.
3. SOI base GaN pressure sensor according to claim 1, which is characterized in that the GaN buffer layer thickness is 2 micro-
Rice is to 6 microns.
4. SOI base GaN pressure sensor according to claim 1, which is characterized in that the SiO2Oxidated layer thickness is 0.2
Micron is to 10 microns.
5. SOI base GaN pressure sensor according to claim 1, which is characterized in that the cavity on the Si substrate passes through
Dry physical etching or wet chemical etch process are prepared.
6. a kind of preparation method based on SOI base GaN pressure sensor described in any one of claim 1-5, feature
It is, comprising:
The SiO is prepared in the upper surface of Si substrate2Oxide layer；
In the SiO2The upper surface of oxide layer prepares the Si top layer；
The GaN buffer layer is prepared in the upper surface of the Si top layer；
The barrier layer is prepared in the upper surface of the GaN buffer layer；
Pressure sensitive cells are prepared in the upper surface of the barrier layer；
Cavity is prepared on Si substrate position corresponding with the pressure sensitive cells, wherein the cavity is through described
The upper and lower surfaces of Si substrate.
7. the preparation method of GaN pressure sensor according to claim 6, which is characterized in that the GaN buffer layer thickness
It is 2 microns to 6 microns.
8. the preparation method of GaN pressure sensor according to claim 6, which is characterized in that the barrier layer includes
One of InAlGaN quaternary compound, InAlN/AlGaN/InGaN ternary compound and AlN/InN binary compound are more
Kind.
9. the preparation method of GaN pressure sensor according to claim 6, which is characterized in that the SiO2Oxidated layer thickness
It is 0.2 micron to 10 microns.
10. the preparation method of GaN pressure sensor according to claim 6, which is characterized in that the barrier layer thickness is
10 nanometers to 30 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811114543.0A CN109297620A (en) | 2018-09-25 | 2018-09-25 | SOI base GaN pressure sensor and preparation method thereof |
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| CN201811114543.0A CN109297620A (en) | 2018-09-25 | 2018-09-25 | SOI base GaN pressure sensor and preparation method thereof |
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Application publication date: 20190201 |