CN103728065A - SOI structure pressure sensor - Google Patents
SOI structure pressure sensor Download PDFInfo
- Publication number
- CN103728065A CN103728065A CN201210384004.5A CN201210384004A CN103728065A CN 103728065 A CN103728065 A CN 103728065A CN 201210384004 A CN201210384004 A CN 201210384004A CN 103728065 A CN103728065 A CN 103728065A
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- CN
- China
- Prior art keywords
- monocrystalline silicon
- soi structure
- monocrystalline
- silicon
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 2
- 238000005259 measurement Methods 0.000 abstract 1
- 239000011888 foil Substances 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- VZOPRCCTKLAGPN-ZFJVMAEJSA-L potassium;sodium;(2r,3r)-2,3-dihydroxybutanedioate;tetrahydrate Chemical compound O.O.O.O.[Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O VZOPRCCTKLAGPN-ZFJVMAEJSA-L 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229940074446 sodium potassium tartrate tetrahydrate Drugs 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000003129 oil well Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
An SOI structure pressure sensor comprises a monocrystalline silicon substrate. A layer of silicon oxide thin film is arranged on the monocrystalline silicon substrate, a monocrystalline silicon strain resistance layer is arranged on the silicon oxide thin film, two electrodes are arranged on the monocrystalline silicon strain resistance layer, and the monocrystalline silicon substrate is P type monocrystalline silicon. The SOI structure pressure sensor has good high temperature characteristics, can achieve high-precision measurement of pressure signals under high temperature and is high in sensitivity.
Description
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Technical field
The invention belongs to pressure sensor technique field, particularly a kind of soi structure pressure transducer.
Background technology
Pressure transducer is a kind of sensor the most conventional in industrial practice, it is widely used in various industrial automatic control environment, relates to numerous industries such as water conservancy and hydropower, railway traffic, intelligent building, production automatic control, Aero-Space, military project, petrochemical industry, oil well, electric power, boats and ships, lathe, pipeline.
In piezoelectric sensor, the main piezoelectric using includes quartz, sodium potassium tartrate tetrahydrate and phosphoric acid dihydro amine.Wherein quartzy (silicon dioxide) is a kind of mineral crystal, piezoelectric effect finds in this crystal, and within certain temperature range, piezoelectric properties exist always, but after temperature surpasses this scope, piezoelectric properties disappear completely (this high temperature is exactly so-called " Curie point ").Because the changing electric field along with stress changes small (also just saying that piezoelectric modulus is lower), so quartzy, by other piezoelectric crystal, substituted gradually.And sodium potassium tartrate tetrahydrate has very large piezoelectric susceptibility and piezoelectric modulus, but it can only can apply under room temperature and the lower environment of humidity ratio.Phosphoric acid dihydro amine belongs to artificial crystal, can bear high temperature and quite high humidity, so be widely used.In present piezoelectric effect, be also applied on polycrystal, such as present piezoelectric ceramics, comprise barium titanate piezoelectric ceramics, PZT, niobate system piezoelectric ceramics, lead magnesio-niobate piezoelectric ceramics etc.
Resistance strain gage pressure transducer is common mechanics sensor, and resistance strain gage is a kind of Sensitive Apparatus that strain variation on measured piece is converted into a kind of electric signal.It is one of chief component of pressure resistance type strain transducer.Resistance strain gage application is maximum is two kinds of metal resistance strain gauge and semiconductor gauges.Metal resistance strain gauge has again two kinds of thread foil gauge and metal forming shape foil gauges.Normally foil gauge is bonded in closely and is produced on mechanics strain matrix by special bonding agent, when the stressed generation STRESS VARIATION of matrix, resistance strain gage also produces deformation together, and the resistance of foil gauge is changed, thereby make to be added in ohmically voltage, changes.The change in resistance that this foil gauge produces when stressed is conventionally less, and general this foil gauge all forms strain bridge, and amplifies by follow-up instrument amplifier, then is transferred to treatment circuit (normally A/D conversion and CPU) demonstration or topworks.
Yet current pressure transducer at high temperature measuring accuracy is greatly affected, be difficult to satisfy the demands.
Summary of the invention
In order to overcome above-mentioned the deficiencies in the prior art, the object of the present invention is to provide a kind of soi structure pressure transducer, there is feature easy to use simple in structure.
To achieve these goals, the technical solution used in the present invention is:
A kind of soi structure pressure transducer, comprise monocrystalline substrate 4, in monocrystalline substrate 4, have one deck silicon oxide film 3, on silicon oxide film 3, have one deck monocrystalline silicon electrostrictive strain resistance layer 2, in monocrystalline silicon electrostrictive strain resistance layer 2, have two electrodes 1, described monocrystalline substrate 4 is p type single crystal silicon.
The bottom of described monocrystalline substrate 4 has window 5.
Compared with prior art, the present invention has good hot properties, can at high temperature realize the high-acruracy survey to pressure signal, highly sensitive.
Accompanying drawing explanation
Accompanying drawing is structural representation of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is carried out to more detailed explanation.
As shown in the figure, the present invention is a kind of soi structure pressure transducer, comprise monocrystalline substrate 4, in monocrystalline substrate 4, there is one deck silicon oxide film 3, on silicon oxide film 3, there is one deck monocrystalline silicon electrostrictive strain resistance layer 2, in monocrystalline silicon electrostrictive strain resistance layer 2, have two electrodes 1, described monocrystalline substrate 4 is p type single crystal silicon, and the bottom of monocrystalline substrate 4 has window 5.
The present invention, will isolate between electrostrictive strain resistance layer and substrate with silicon oxide film 3 as electrostrictive strain resistance layer with single crystal silicon material simultaneously, forms SOI monocrystal silicon structure.First, monocrystalline silicon is as strain resistor material, sensitivity is higher, ensure maximum output, between electrostrictive strain resistance layer and substrate, isolation can reduce leakage current simultaneously, thereby improves senor operating temperature scope, and can Direct Bonding between monocrystalline silicon and silicon dioxide, contact is good, therefore can avoid producing extra-stress, improves mechanics and electrology characteristic.
Claims (2)
1. a soi structure pressure transducer, it is characterized in that, comprise monocrystalline substrate (4), in monocrystalline substrate (4), there is one deck silicon oxide film (3), on silicon oxide film (3), there is one deck monocrystalline silicon electrostrictive strain resistance layer (2), in monocrystalline silicon electrostrictive strain resistance layer (2), have two electrodes (1), described monocrystalline substrate (4) is p type single crystal silicon.
2. pressure transducer according to claim 1, is characterized in that, the bottom of described monocrystalline substrate (4) has window (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210384004.5A CN103728065A (en) | 2012-10-11 | 2012-10-11 | SOI structure pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210384004.5A CN103728065A (en) | 2012-10-11 | 2012-10-11 | SOI structure pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103728065A true CN103728065A (en) | 2014-04-16 |
Family
ID=50452239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210384004.5A Pending CN103728065A (en) | 2012-10-11 | 2012-10-11 | SOI structure pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103728065A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109099832A (en) * | 2018-08-21 | 2018-12-28 | 华东理工大学 | Strain transducer and its manufacturing method |
| CN109297620A (en) * | 2018-09-25 | 2019-02-01 | 中国电子科技集团公司第十三研究所 | SOI-based GaN pressure sensor and preparation method thereof |
| CN112067189A (en) * | 2020-11-10 | 2020-12-11 | 南京高华科技股份有限公司 | Pressure sensor with peripheral medium isolation cup structure and preparation method thereof |
| CN112903149A (en) * | 2021-01-22 | 2021-06-04 | 上海芯物科技有限公司 | Pressure sensor and manufacturing method thereof |
-
2012
- 2012-10-11 CN CN201210384004.5A patent/CN103728065A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109099832A (en) * | 2018-08-21 | 2018-12-28 | 华东理工大学 | Strain transducer and its manufacturing method |
| CN109297620A (en) * | 2018-09-25 | 2019-02-01 | 中国电子科技集团公司第十三研究所 | SOI-based GaN pressure sensor and preparation method thereof |
| CN112067189A (en) * | 2020-11-10 | 2020-12-11 | 南京高华科技股份有限公司 | Pressure sensor with peripheral medium isolation cup structure and preparation method thereof |
| CN112067189B (en) * | 2020-11-10 | 2021-09-21 | 南京高华科技股份有限公司 | Pressure sensor with peripheral medium isolation cup structure and preparation method thereof |
| CN112903149A (en) * | 2021-01-22 | 2021-06-04 | 上海芯物科技有限公司 | Pressure sensor and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140416 |