CN109297365A - Three electrode switch of plane and Exploding Foil integrated chip based on LTCC technique - Google Patents
Three electrode switch of plane and Exploding Foil integrated chip based on LTCC technique Download PDFInfo
- Publication number
- CN109297365A CN109297365A CN201811222125.3A CN201811222125A CN109297365A CN 109297365 A CN109297365 A CN 109297365A CN 201811222125 A CN201811222125 A CN 201811222125A CN 109297365 A CN109297365 A CN 109297365A
- Authority
- CN
- China
- Prior art keywords
- electrode
- switch
- structure sheaf
- integrated chip
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F42—AMMUNITION; BLASTING
- F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
- F42B3/00—Blasting cartridges, i.e. case and explosive
- F42B3/10—Initiators therefor
- F42B3/12—Bridge initiators
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F42—AMMUNITION; BLASTING
- F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
- F42B3/00—Blasting cartridges, i.e. case and explosive
- F42B3/10—Initiators therefor
- F42B3/195—Manufacture
- F42B3/198—Manufacture of electric initiator heads e.g., testing, machines
Abstract
The present invention relates to technical field of explosive detonation field, specially a kind of three electrode switch of plane and Exploding Foil integrated chip based on LTCC technique.Chip is divided into three electrode switch and Exploding Foil two parts, comprising: basal layer: basal layer in switch sections as carrier, in Exploding Foil part as reflective back plane；Metal layer: in switch sections as cathode, anode and trigger electrode, in Exploding Foil part as bridge foil, transition region, metal layer further includes pad；The structure sheaf A being placed on metal layer: as slot electrode, film flying and bond pad trench；Structure sheaf B: being placed on structure sheaf A, as slot electrode, accelerates thorax and bond pad trench；Structure sheaf C: being placed on structure sheaf B, as slot electrode, projectile filling groove and bond pad trench.The present invention manufacture three electrode switch of plane and Exploding Foil integrated chip can with integral sintering using LTCC technique, realizes batch production, improves the consistency of product, and reduce production cost.
Description
Technical field
The present invention relates to technical field of explosive detonation fields, and in particular to a kind of three electricity of plane based on low-temperature co-fired ceramics technique
Pole switch and Exploding Foil integrated chip.
Background technique
Explosive initiation is one of research direction of explosion mechanics.Exploding foil initiator (Exploding Foil
Initiator, EFI) it is a kind of typical insensitiveness detonation mode.Mainly include substrate, explosive bridge foil, film flying, accelerate thorax and medicine
Agent.Since, without sensitive priming, the sensitivity of powder charge used is suitable with high density high explosive therefore whole in Exploding foil initiator
A initiation system safety and reliability with higher.It is widely used in the fuzing system, armament of nuclear weapon and antitank leads
The weaponrys such as bullet, air-to-air missile, torpedo.In addition, Exploding Foil detonating technique sensitive angle, rocket motor ignition system,
Increasingly important role is also gradually played in multipoint priming (igniting) control system.
The Exploding foil initiator of traditional structure forms is that each discrete device is manually assembled, low efficiency, body
Product is big, energy consumption is high.In addition, common Exploding foil initiator switch is that traditional three-dimensional vacuum spark switchs, volume is big, price
Height is unfavorable for the miniaturization, integrated of Exploding Foil initiation system.And LTCC Technology (Low Temperature Co-
Fired Ceramic, LTCC), it is characterized in that multi-layer ceramic component is combined with multilayer circuit graph technology, with glass/pottery
Dielectric layer of the materials such as porcelain as circuit regards ectonexine electrode material with high conductivity metals such as Au, Ag, Cu, and using flat
The mode printed circuit of row printing, ceramic component or base made of being sintered in the sintering furnace lower than about 1000 DEG C of melting point metal
Plate.
In recent years, with the development of micro-processing technology, planar high-voltage switch is by feat of can mass production and convenient for integrated
The features such as gradually replacing traditional three-dimensional trigger switch.Therefore, how to reduce the volume of initiation system, improve energy benefit
With rate and production efficiency and production cost is reduced, Exploding foil initiator is enable to be widely used in small-bore, low cost ammunition
In, and achieve the purpose that explosive initiation, it is current urgent problem to be solved.
Summary of the invention
The purpose of the present invention is to provide a kind of, and three electrode switch of plane based on LTCC technique integrates Exploding Foil chip.
The technical solution for realizing the aim of the invention is as follows: a kind of three electrode switch of plane and explosion based on LTCC technique
Foil integrated chip, the integrated chip are divided into three electrode switch of plane and Exploding foil initiator two parts, specifically include:
Basal layer: the basal layer in three electrode switch part of plane as carrier, in the conduct of Exploding foil initiator part
Reflective back plane；
Metal layer: in switch sections as cathode, anode and trigger electrode, in Exploding Foil part as bridge foil, transition region,
In the anodes of three electrode switch be connected with bridge foil by transition region；Transition region is bridge foil both ends by the narrow region to broaden, further includes
The pad being connected with the transition region of the cathode of switch, trigger electrode and Exploding Foil；
Structure sheaf A: being placed on metal layer, in switch sections as slot electrode, in Exploding Foil part as film flying, and
The bond pad trench of exposure pad；
Structure sheaf B: being placed on structure sheaf A, in switch sections as slot electrode, is used as in Exploding Foil part and accelerates thorax,
With the bond pad trench of exposure pad；
Structure sheaf C: being placed on structure sheaf B, in switch sections as slot electrode, in Exploding Foil part as projectile filling groove,
With the bond pad trench of exposure pad.
The circuitous pattern of the metal layer is printed on basal layer by silk-screen printing technique, and the material of metal layer is height
Conductivity material Au or Ag slurry, and on switch and pad, Pd-Ag in silk-screen printing again.
The material of structure sheaf A is one of following two: a kind of green sheet material for 20 μm of -50 μ m-thick；It is another
For on the glaze of 10 μm of -15 μ m-thick, Au the or Ag metal material of one layer of 8-12 μ m-thick in silk-screen printing, glaze-gold of formation
Belong to composite material.
The cathode of the switch, the radius R of anode are 1800 μm -2200 μm, and cathode and anode gap are 600 μm of -1500 μ
M, trigger electrode width are 180 μm -220 μm, and the gap of trigger electrode and cathode is 140-160 μm；Bridge foil having a size of 0.3mm ×
0.3mm-0.4 × 0.4mm, transition region are in 135 ° of -150 ° of angles, and transition region is with a thickness of 5-6 μm.
The preparation method uses LTCC Technology, prints electricity using conductor paste with gap screen printing technique
Road, by positioning, hot pressing, lower than 1000 DEG C at a temperature of be sintered, formed integrated chip.
It is as follows using the specific preparation process of LTCC Technology:
Step 1: 10 layers, every layer are stacked, with a thickness of 110 μm~114 μm of ceramic chips material layers to just, as collection
At the basal layer of chip.
Step 2: using silk-screen printing technique, by the cathode, anode and trigger electrode of three electrode switch of plane, bridge foil, transition
Area and pad are printed on the tenth layer of ceramic chips, the metal layer as integrated chip；
Step 3: going out circular electrode slot and side for 1 layer with a thickness of 20 μm~50 μm ceramic chips material use mechanical rams
Shape bond pad trench, the green sheet material carry out the ceramic chips and metal layer to just as film flying, the structure sheaf as integrated chip
A；
Step 4: the ceramic chips to 3 layers, every layer with a thickness of 110 μm~114 μm are punched out processing, circular electrode is gone out
Slot accelerates thorax and square pads slot, the structure sheaf B then by 3 layers of ceramic chips stacked in multi-layers, to just, as integrated chip；
Step 5: using rectangular punch and round punch, to 5 layers, every layer with a thickness of 110 μm~114 μm ceramic chips into
Row punching, then by 5 layers of ceramic chips stacked in multi-layers, to just, is made to obtain circular electrode slot, projectile filling groove and square pads slot
For the structure sheaf C of integrated chip；
Step 6: successively stacked according to the sequence of basal layer, metal layer, structure sheaf A, structure sheaf B, structure sheaf C, school position,
Then it is placed in static pressure machine and carries out hot pressing；
Step 7: the substrate after hot pressing is put into sintering furnace, it is sintered at 800-950 DEG C；
Step 8: scribing forms separate unit, on-off detection is carried out, integrated chip completes.
The thickness of the second step jackshaft foil is thinner than surrounding transition region, and bridge foil is individually printed, with transition region using overlapped
Mode is attached.
The beneficial effects of the present invention are:
(1) using low-temperature co-fired ceramics technique three electrode switch of plane and Exploding Foil integrated chip integration are burnt
Knot manufacture, realizes batch production, improves the consistency of product, and reduce production cost.
(2) simultaneously, three electrode switch of plane has multiple compared with plane electric explosive switch and Schottky one-shot switch
The advantages that being connected and being convenient for detection, plays an important role in Exploding Foil initiation system.
(3) the integrated chip structure designs, and switch and Exploding foil initiator are linked together, leading for circuit is shortened
Line, or even being reduced to the conducting wire in circuit is zero, so that the resistance and inductance in circuit are greatly reduced, to improve circuit
Capacity usage ratio.
Detailed description of the invention
Three electrode switch of Fig. 1 plane and Exploding Foil integrated chip profile diagram.
The line A-A cross-sectional view of Fig. 2 Fig. 1.
Fig. 3 metal layer schematic diagram.
The schematic diagram of Fig. 4 structure sheaf A.
The schematic diagram of Fig. 5 structure sheaf B.
The schematic diagram of Fig. 6 structure sheaf C.
Three electrode switch of Fig. 7 plane and Exploding Foil integrated chip explosive view.
Description of symbols:
1- basal layer, 2- metal layer A, 21- cathode, 22- trigger electrode, 23- anode, 24- bridge foil, 25- transition region, 26- weldering
Panel, 3- structure sheaf A, 31- slot electrode, 32- film flying, 33- bond pad trench, 4- structure sheaf B, 41- slot electrode, 42- accelerate thorax, 43-
Bond pad trench, 5- structure sheaf C, 51- slot electrode, 52- projectile filling groove, 53- bond pad trench.
Specific embodiment
Present invention is further described in detail with reference to the accompanying drawings and detailed description.
In conjunction with FIG. 1 to FIG. 7, three electrode switch of plane and Exploding Foil integrated chip are divided into three electrode switch of plane and quick-fried
Fried foil initiator two parts, specifically include basal layer (1), metal layer (2), structure sheaf A (3), structure sheaf B (4) and structure sheaf C
(5)。
It is 300MPa~320MPa that the basal layer (1), which has flexural strength, in three electrode switch part of plane as load
Body, in Exploding foil initiator part as reflective back plane.
The circuitous pattern of the metal layer (2) is printed on basal layer (1) by silk-screen printing technique, in switch portion
It is allocated as cathode (21), anode (23) and trigger electrode (22), in Exploding Foil part as bridge foil (24), transition region (25), wherein
The anode (23) of three electrode switch is connected with bridge foil (24) by transition region (25)；Transition region is that bridge foil (24) both ends are broadened by narrow
Region, additionally include the pad being connected with the transition region (25) of the cathode (21) of switch, trigger electrode (22) and Exploding Foil
(26), convenient for connecting with external circuit, the structure of metal layer (2) is as shown in Figure 3；The material of metal layer (2) is high conductivity material
Expect Au or Ag slurry, and switching with pad (26) above, again Pd-Ag in silk-screen printing.
The structure sheaf A (3) is placed on metal layer (2), and goes out circular slot electrode and rectangular with mechanical ram
Bond pad trench, in switch sections as slot electrode (31) and bond pad trench (33), in Exploding Foil part as film flying (32), structure sheaf A
(3) material can be divided into two kinds, a kind of green sheet material for 20 μm~50 μ m-thicks；Another kind is the glaze of 10 μm~15 μ m-thicks
On, then the metal materials such as one layer 10 μm Au or Ag in silk-screen printing, glaze-metal composite material of formation；The structure
Layer B (4) is identical as structure sheaf A (3) manufacture craft, is placed on structure sheaf A (3), in switch sections as slot electrode (41),
In Exploding Foil part as acceleration thorax (42) and bond pad trench (43)；The production work of the structure sheaf C (5) and structure sheaf B (4)
Skill is identical, is placed on structure sheaf B (4), in switch sections as slot electrode (51), in Exploding Foil part as projectile filling groove
(52), bond pad trench (53) are additionally included.
Three electrode switch of plane and Exploding Foil integrated chip are prepared by LTCC Technology.Low temperature is total
Ceramic technology is burnt, is the dielectric layer using glass/ceramic material as circuit, works as using high conductivity metals such as Au, Ag, Pd/Ag
Ectonexine electrode is done, is being lower than 1000 by positioning, hot pressing with gap screen printing technique printed circuit using conductor paste
Sintering forms ceramic component or substrate at a temperature of DEG C.The preparation process of the integrated chip is as follows:
The first step stacks 10 layers, every layer, to just with a thickness of 110 μm~114 μm of ceramic chips material layers, as collection
At the basal layer (1) of chip.
Second step, using silk-screen printing technique, by the cathode (21), anode (23) and trigger electrode of three electrode switch of plane
(22), bridge foil (24), transition region (25) and pad (26) are printed on the tenth layer of ceramic chips, the metal layer as integrated chip
(2)；The thickness of its jackshaft foil (24) is thin than surrounding transition region (25), it is therefore desirable to individually printing, and adopted with transition region (25)
With overlapped, mode is attached；
Third step goes out circular electrode slot (31) for 1 layer with a thickness of 20 μm~50 μm ceramic chips material use mechanical rams
The ceramic chips and metal layer (2) are carried out to just using the green sheet material as film flying (32) with square pads slot (33),
Structure sheaf A (3) as integrated chip；
4th step, same to step 3, the ceramic chips to 3 layers, every layer with a thickness of 110 μm~114 μm are punched out processing, go out
Circular electrode slot (41) and accelerate thorax (42) and square pads slot (43), then by 3 layers of ceramic chips stacked in multi-layers, to just, as
The structure sheaf B (4) of integrated chip；
The ceramic chips for needing to dig cavity are equally sequentially placed into puncher by the 5th step, using 2.0mm rectangular punch and
The round punch of 0.2mm, the ceramic chips to 5 layers, every layer with a thickness of 110 μm~114 μm are punched out, to obtain circular electrode
Slot (51) and projectile filling groove (52) and square pads slot (53), then by 5 layers of ceramic chips stacked in multi-layers, to just, as integrated chip
Structure sheaf C (5)；
6th step, according to basal layer (1), metal layer (2), structure sheaf A (3), structure sheaf B (4), structure sheaf C (5) it is suitable
Sequence successively stacks, school position, is then placed in static pressure machine and carries out hot pressing；
Substrate after hot pressing is put into sintering furnace and is sintered at 900 DEG C by the 7th step；
8th step, scribing forms separate unit, and carries out on-off detection.
So far, three electrode switch of plane based on LTCC Technology and Exploding Foil integrated chip complete.
Case study on implementation
The implementation case devises three electrode of plane based on LTCC technique on the basis of LTCC Exploding foil initiator and opens
It closes and Exploding Foil integrated chip.This can be integrated core in conjunction with its processing technology step according to LTCC process integration sintering characteristic
Piece is divided into basal layer (1), metal layer (2), structure sheaf A (3), (5) five parts structure sheaf B (4) and structure sheaf C.Wherein substrate
Ceramic chips of the layer (1) by 10 layers, every layer with a thickness of 110 μm form, and reflective back plane is used as in entire integrated chip.Metal layer
It (2) is that figure is uniformly printed on using Au slurry as conductive material using the technique of gap silk-screen printing by the tenth layer of green
The thickness of on piece, Au slurry is controlled by the thickness of silk screen, and generally 8 μm~12 μm；Metal layer (2) can be divided into three parts:
Three electrode switch of plane, Exploding Foil and the pad (26) for connecting external circuit device.Three electrode switch of plane includes yin
Pole (21), anode (23) and trigger electrode (22), herein, the cathode of switch, the radius R of anode are 1800-2200 μm, cathode and sun
Clearance between poles are set as 600-1500 μm, and trigger electrode width is set as 180-220 μm, and the gap of trigger electrode and cathode is set as 150 μm；And it is quick-fried
Fried foil part includes bridge foil (24), transition region (25), and jackshaft foil part is 0.3-0.4 × 0.3-0.4mm, is in transition region
135 ° of -150 ° of angles, with a thickness of 5~6 μm；After Au metallic pattern prints, then by Pd/Ag using the technique printing of silk-screen printing
On the Au of three electrode switch of plane and pad (26), it is therefore an objective to prevent the ablation of switch electrode material and convenient for external circuit
Welding.Structure sheaf A (3) uses film flying (32) of a layer thickness for 50 μm of ceramic chips as Exploding Foil in integrated chip, and
Be utilized respectively round punch that diameter is 0.2mm and 2.0mm rectangular punch go out circular electrode slot (31) that diameter is 3mm and
The rectangular channel (33) of 4mm × 3mm.By 3 layers, every layer forms with a thickness of 110 μm of ceramic chips, and utilizes diameter structure sheaf B (4)
0.2mm round punch goes out the through-hole that diameter is 0.56mm right above bridge foil (24) and is used as acceleration thorax.Structure sheaf C (5) by
5 layers, every layer stacks composition with a thickness of 110 μm of ceramic chips, and is accelerating to go out diameter right above thorax to be 4mm with mechanical ram
Projectile filling groove.
Thus the preparation of plane three electrode switch and Exploding Foil integrated chip based on LTCC technique can be completed.It will integrate
Chip is connected with external pulse power power-supply, is lighted a fire to it and the experimental test that detonates.Preliminary studies have shown that in major loop
Under conditions of 0.22 μ F of capacitor, pressurization 2430V, bridge foil rapid vaporization simultaneously forms plasma, shears the ceramic film flying of 50 μ m-thicks,
The HNS-IV explosive column of successful Impact Initiation Φ 4mm × 4mm.After HNS-IV powder column detonation, chip has not existed；In addition,
The integrated chip is in 0.22 μ F of main capacitance, pressurization 1400V, the successful ignition BPN powder column of Φ 5mm × 4mm.It realizes
Igniting and detonation function.
Three electrode switch of plane and Exploding Foil integrated chip structure, greatly reduce the body of Exploding Foil initiation system
Product, reduces production cost, shortens the conducting wire in circuit, to reduce firing energy, improves the energy benefit in circuit
With rate.Due to the miniaturization of the integrated chip structure, low energy and low cost make it can be used as igniter and initiator, are used in
In-line arrangement detonation in the igniting and Desensitive ammunition weapon system of solid propellant rocket.
Claims (7)
1. a kind of three electrode switch of plane and Exploding Foil integrated chip based on LTCC technique, which is characterized in that the integrated core
Piece is divided into three electrode switch of plane and Exploding foil initiator two parts, specifically includes:
Basal layer (1): the basal layer (1), as carrier, is made in three electrode switch part of plane in Exploding foil initiator part
For reflective back plane；
Metal layer (2): in switch sections as cathode (21), anode (23) and trigger electrode (22), in Exploding Foil part as bridge
Foil (24), transition region (25), wherein the anode (23) of three electrode switch is connected with bridge foil (24) by transition region (25), transition region
(25) be bridge foil (24) both ends by the narrow region to broaden, metal layer (2) further include with switch cathode (21), trigger electrode (22) and
The connected pad (26) of the transition region (25) of Exploding Foil；
Structure sheaf A (3): being placed on metal layer (2), in switch sections as slot electrode (31), in Exploding Foil part as winged
Piece (32), and the bond pad trench (33) of exposure pad；
Structure sheaf B (4): being placed on structure sheaf A (3), in switch sections as slot electrode (41), is used as and adds in Exploding Foil part
Fast thorax (42), and the bond pad trench (43) of exposure pad；
Structure sheaf C (5): being placed on structure sheaf B (4), in switch sections as slot electrode (51), in Exploding Foil part as dress
Drug slot (52), and the bond pad trench (53) of exposure pad.
2. three electrode switch of plane and Exploding Foil integrated chip according to claim 1 based on LTCC technique, feature
It is, the circuitous pattern of the metal layer (2) is printed on basal layer (1) by silk-screen printing technique, the material of metal layer (2)
Material is high conductivity material Au or Ag slurry, and is being switched with pad (26) above, again Pd-Ag in silk-screen printing.
3. three electrode switch of plane and Exploding Foil integrated chip according to claim 1 based on LTCC technique, feature
It is, the material of structure sheaf A (3) is one of following two: a kind of green sheet material for 20 μm of -50 μ m-thick；It is another
For on the glaze of 10 μm of -15 μ m-thick, Au the or Ag metal material of one layer of 8-12 μ m-thick in silk-screen printing, glaze-gold of formation
Belong to composite material.
4. three electrode switch of plane and Exploding Foil integrated chip according to claim 1 based on LTCC technique, feature
It is, the cathode (21) of the switch, the radius R of anode (23) are 1800 μm -2200 μm, cathode (21) and anode (23) gap
It is 600 μm -1500 μm, trigger electrode (22) width is 180 μm -220 μm, and the gap of trigger electrode and cathode is 140-160 μm；Bridge foil
(24) having a size of 0.3mm × 0.3mm-0.4 × 0.4mm, transition region (25) is in 135 ° of -150 ° of angles, transition region (25) with a thickness of
5-6μm。
5. a kind of described in any item three electrode switch of plane and Exploding Foil integrated chip based on LTCC technique of claim 1-4
Preparation method, which is characterized in that the preparation method use LTCC Technology, using conductor paste with gap silk screen
Printing technology printed circuit, by positioning, hot pressing, lower than 1000 DEG C at a temperature of be sintered, formed integrated chip.
6. preparation method according to claim 5, which is characterized in that using specifically preparing for LTCC Technology
Journey is as follows:
Step 1: 10 layers, every layer are stacked, with a thickness of 110 μm -114 μm of ceramic chips material layers to just, as integrated chip
Basal layer (1).
Step 2: using silk-screen printing technique, by the cathode (21), anode (23) and trigger electrode (22) of three electrode switch of plane,
Bridge foil (24), transition region (25) and pad (26) are printed on the tenth layer of ceramic chips, the metal layer (2) as integrated chip；
Step 3: going out circular electrode slot (31) and rectangular for 1 layer with a thickness of 20 μm of -50 μm of ceramic chips material use mechanical rams
Bond pad trench (33), the green sheet material carry out the ceramic chips and metal layer (2) to just, as integrated core as film flying (32)
The structure sheaf A (3) of piece；
Step 4: being punched out processing to 3 layers, every layer with a thickness of 110 μm -114 μm of ceramic chips, circular electrode slot is gone out
(41), accelerate thorax (42) and square pads slot (43), the knot then by 3 layers of ceramic chips stacked in multi-layers, to just, as integrated chip
Structure layer B (4)；
Step 5: the ceramic chips to 5 layers, every layer with a thickness of 110 μm -114 μm rush using rectangular punch and round punch
Hole, to obtain circular electrode slot (51), projectile filling groove (52) and square pads slot (53), then by 5 layers of ceramic chips stacked in multi-layers,
Structure sheaf C (5) to just, as integrated chip；
Step 6: according to the sequence of basal layer (1), metal layer (2), structure sheaf A (3), structure sheaf B (4), structure sheaf C (5), by
Stacking put, school position, be then placed in static pressure machine and carry out hot pressing；
Step 7: the substrate after hot pressing is put into sintering furnace, it is sintered at 800-950 DEG C；
Step 8: scribing forms separate unit, on-off detection is carried out, integrated chip completes.
7. preparation method according to claim 6, which is characterized in that the thickness of the second step jackshaft foil (24) compares surrounding
Transition region (5) is thin, and bridge foil (24) is individually printed, and using overlapped, mode is attached with transition region (25).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811222125.3A CN109297365A (en) | 2018-10-19 | 2018-10-19 | Three electrode switch of plane and Exploding Foil integrated chip based on LTCC technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811222125.3A CN109297365A (en) | 2018-10-19 | 2018-10-19 | Three electrode switch of plane and Exploding Foil integrated chip based on LTCC technique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109297365A true CN109297365A (en) | 2019-02-01 |
Family
ID=65157280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811222125.3A Pending CN109297365A (en) | 2018-10-19 | 2018-10-19 | Three electrode switch of plane and Exploding Foil integrated chip based on LTCC technique |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109297365A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109945746A (en) * | 2019-03-22 | 2019-06-28 | 中国电子科技集团公司第四十三研究所 | The preparation method of chip Exploding Foil |
| CN110649467A (en) * | 2019-09-27 | 2020-01-03 | 南京理工大学 | Closed type plane three-electrode spark switch and preparation method thereof |
| CN112923800A (en) * | 2021-01-22 | 2021-06-08 | 南京理工大学 | Exploding foil chip based on electric explosion and plasma discharge coupling and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030200890A1 (en) * | 2002-04-30 | 2003-10-30 | Reynolds Richard K. | Integrated planar switch for a munition |
| US6977468B1 (en) * | 2003-02-03 | 2005-12-20 | Auburn University | Integrated spark gap device |
| CN103868417A (en) * | 2014-04-02 | 2014-06-18 | 中国工程物理研究院化工材料研究所 | Chip type exploding foil component and production method for same |
| CN104697405A (en) * | 2015-03-10 | 2015-06-10 | 南京理工大学 | EFI (exploding foil initiator) chip unit, preparation method of EFI chip unit, and exploding foil initiation device based on chip unit |
-
2018
- 2018-10-19 CN CN201811222125.3A patent/CN109297365A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030200890A1 (en) * | 2002-04-30 | 2003-10-30 | Reynolds Richard K. | Integrated planar switch for a munition |
| US6977468B1 (en) * | 2003-02-03 | 2005-12-20 | Auburn University | Integrated spark gap device |
| CN103868417A (en) * | 2014-04-02 | 2014-06-18 | 中国工程物理研究院化工材料研究所 | Chip type exploding foil component and production method for same |
| CN104697405A (en) * | 2015-03-10 | 2015-06-10 | 南京理工大学 | EFI (exploding foil initiator) chip unit, preparation method of EFI chip unit, and exploding foil initiation device based on chip unit |
Non-Patent Citations (1)
| Title |
|---|
| PENG ZHU ETC.: "Development of a monolithic micro chip exploding foil initiator based on low temperature co-fired ceramic", 《SENSORS & ACTUATORS：A.PHYSICAL》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109945746A (en) * | 2019-03-22 | 2019-06-28 | 中国电子科技集团公司第四十三研究所 | The preparation method of chip Exploding Foil |
| CN109945746B (en) * | 2019-03-22 | 2021-07-23 | 中国电子科技集团公司第四十三研究所 | Preparation method of sheet type explosive foil |
| CN110649467A (en) * | 2019-09-27 | 2020-01-03 | 南京理工大学 | Closed type plane three-electrode spark switch and preparation method thereof |
| CN112923800A (en) * | 2021-01-22 | 2021-06-08 | 南京理工大学 | Exploding foil chip based on electric explosion and plasma discharge coupling and preparation method thereof |
| CN112923800B (en) * | 2021-01-22 | 2022-07-22 | 南京理工大学 | Exploding foil chip based on electric explosion and plasma discharge coupling and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109297365A (en) | Three electrode switch of plane and Exploding Foil integrated chip based on LTCC technique | |
| CN103604325B (en) | A kind of high pressure plasma thin film switch and manufacture method thereof | |
| CN110132075A (en) | A kind of Exploding Foil integrated chip containing the film flying containing energy | |
| CN104697405A (en) | EFI (exploding foil initiator) chip unit, preparation method of EFI chip unit, and exploding foil initiation device based on chip unit | |
| Wu et al. | A novel electrolytic ignition monopropellant microthruster based on low temperature co-fired ceramic tape technology | |
| CN107091599A (en) | A kind of integrated impact piece priming device | |
| JP2017183052A (en) | All-solid type secondary battery | |
| US3906858A (en) | Miniature igniter | |
| US8823244B2 (en) | Monolithic multi-layered actuator with external electrodes made of a metallic, porous, expandable conductive layer | |
| CN109297364A (en) | A kind of microchip Exploding foil initiator and preparation method thereof containing Al/PTFE | |
| CN109802302B (en) | Closed planar three-electrode switch chip based on LTCC process | |
| CN111721163A (en) | Microchip integrated exploding foil initiator based on plane high-voltage switch | |
| CN102249830B (en) | Silicon-cup energy-accumulation Al/CuO composite film ignition bridge and ignition bridge array | |
| CN100568409C (en) | Variable resistor | |
| CN206450145U (en) | A kind of impact piece initiator of Integrated electrode | |
| CN107069059B (en) | Thermal battery activation device based on PVDF film | |
| CN209512654U (en) | Planar high-voltage based on micro- foil electric detonation switchs integrated Exploding Foil chip | |
| CN106784297A (en) | Piezoelectric ceramic actuator piece and preparation method thereof | |
| CN110411285B (en) | Exploding foil overpressure chip integrated with one-shot switch and detonating device thereof | |
| CN109141145B (en) | Dexterous detonator based on low-temperature co-fired ceramic | |
| CN103115528A (en) | Microminiature high-voltage discharge device | |
| CN109186380A (en) | A kind of no explosive wastewater electric ignition device | |
| CN112923800B (en) | Exploding foil chip based on electric explosion and plasma discharge coupling and preparation method thereof | |
| CN110649467B (en) | Closed type plane three-electrode spark switch and preparation method thereof | |
| CN111641200A (en) | Discharge unit based on serial-type gas discharge tube high-voltage pulse power switch |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190201 |
|
| RJ01 | Rejection of invention patent application after publication |