CN109285817A - Semiconductor device and vehicle with it - Google Patents
Semiconductor device and vehicle with it Download PDFInfo
- Publication number
- CN109285817A CN109285817A CN201710589646.1A CN201710589646A CN109285817A CN 109285817 A CN109285817 A CN 109285817A CN 201710589646 A CN201710589646 A CN 201710589646A CN 109285817 A CN109285817 A CN 109285817A
- Authority
- CN
- China
- Prior art keywords
- power module
- heat radiating
- flat tube
- radiating flat
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
Abstract
The invention discloses a kind of semiconductor device and with its vehicle, the semiconductor device includes: radiator, and the radiator has multiple heat radiating flat tubes, multiple heat radiating flat tube arranged stackeds；Power module, the power module are located between two adjacent heat radiating flat tubes, and two end surfaces of the power module contact the surface of opposite heat radiating flat tube respectively, and the surface of at least one in the power module and two adjacent heat radiating flat tubes is welded；Water pipe, the water pipe are connected into thermal dissipating path with the heat radiating flat tube.Semiconductor device according to the present invention by welding the surface of at least one in power module and two adjacent heat radiating flat tubes, and makes water pipe be connected into thermal dissipating path with heat radiating flat tube.Thus, it is possible to provide good heat dissipation path for the power module of fever and electronic component etc., the normal work of power module ensure that.
Description
Technical field
The present invention relates to technical field of vehicle, more particularly to a kind of semiconductor device and with its vehicle.
Background technique
In the related technology, using scumbling thermal interfacial material come connect be widely used in by the way of power module and radiator it is each
In kind power-converting device.However, due to the characteristic of thermal interfacial material itself, thermal conductivity is low, the reliability big, longevity affected by environment
The disadvantages of life is not long, special occasions is not suitable for；In the more complex application of some bad environments, operating condition, waved there are some
Situations such as sending out, is rotten, uneven, will lead to thermal interfacial material thermal resistance and sharply increases, and temperature of power module increases, and seriously affect function
Rate module performance, service life and reliability.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art.For this purpose, the present invention proposes a kind of half
The thermal diffusivity of conductor device, the semiconductor device is good, and high reliablity.
The semiconductor device of embodiment according to a first aspect of the present invention, comprising: radiator, the radiator have multiple dissipate
Hot flat tube, multiple heat radiating flat tube arranged stackeds；Power module, the power module be located at two adjacent heat radiating flat tubes it
Between, and two end surfaces of the power module contact the surface of two opposite heat radiating flat tubes respectively, and the power module with
It welds on the surface of at least one in two adjacent heat radiating flat tubes；Water pipe, the water pipe are connected into heat dissipation with the heat radiating flat tube
Access.
Semiconductor device according to an embodiment of the present invention, by making in power module and two adjacent heat radiating flat tubes at least
One surface welding, and water pipe is made to be connected into thermal dissipating path with heat radiating flat tube.Thus, it is possible to for the power module and electricity of fever
Subcomponent etc. provides good heat dissipation path, ensure that the normal work of power module.
In addition, semiconductor device according to the above embodiment of the present invention also has following additional technical characteristic:
According to one embodiment of present invention, surface of two end faces of the power module with opposite heat radiating flat tube
Welding.
According to one embodiment of present invention, the end surface of the power module and opposite heat radiating flat tube weld, and
Thermal interface material layer is set between another end surfaces and opposite heat radiating flat tube of the power module.
Optionally, welding solder used includes at least one of tin, lead and silver.
According to some embodiments of the present invention, the uniform solder application of two end surfaces of power module, and the power mould
At least end surface of block is bonded and welds completely with spreader surface.
Further, the power module is welded with the radiator flat tube by vacuum back-flow Welding.
Optionally, at least one described power module is equipped between every two adjacent heat radiating flat tubes.
According to one embodiment of present invention, two end faces of power module table with opposite heat radiating flat tube respectively
Face paste is closed.
According to one embodiment of present invention, chip is equipped in the power module, and the power module is close to chip
One end and opposite heat radiating flat tube weld.
According to one embodiment of present invention, the heat radiating flat tube is strip and both ends are respectively equipped with water hole and connect water
Pipe.
The vehicle of embodiment according to a second aspect of the present invention, including semiconductor device described above.
Additional aspect and advantage of the invention will be set forth in part in the description, and will partially become from the following description
Obviously, or practice through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 is an explosive view of semiconductor device according to an embodiment of the present invention；
Fig. 2 is the schematic diagram of semiconductor device according to an embodiment of the invention；
Fig. 3 is the schematic diagram of semiconductor device in accordance with another embodiment of the present invention.
Appended drawing reference: semiconductor device 100, radiator flat tube 1, water hole 11, power module 2, water pipe 3, water inlet pipe 31,
Outlet pipe 32, thermal interface material layer 4, solder layer 5.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, the orientation or position of the instructions such as term " on ", "lower", "inner", "outside"
Setting relationship is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description of the present invention and simplification of the description, rather than
The device or element of indication or suggestion meaning must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot
It is interpreted as limitation of the present invention.In addition, defining " first ", the feature of " second " can explicitly or implicitly include one
Or more this feature.In the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or more.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
In the related technology, using the method for scumbling thermal interfacial material, keep power module tight with radiator by external force compression
Closely connected conjunction.Include the two-side water cooling device being made of power module, thermal interfacial material and flat heat radiating flat tube；The heat dissipation
A power module is placed in two heat radiating flat tubes of device, is arranged successively；It is uniformly applied between power module and heat radiating flat tube one layer thin
Thin thermal interfacial material, power module and radiator are compressed by squeezing, and form thermal interfacial material between two planes non-
Often thin interface；The method have it is easy to operate, two contact interfaces can be filled, uniformly for the power module and electronics of fever
Element provides good heat dissipation path, ensure that the normal work of power module.
However, the connection type using thermal interfacial material is mainly limited by following several points: first, the thermally conductive system of thermal interfacial material
Number low < 10W/ (mk), thermal resistance is big；Second, thermal interfacial material is volatile, goes bad, deposits and become uneven etc. in use
Situation causes thermal resistance to become larger；Third, under high request, reliability, service life are not reached requirement under complex working condition.
Semiconductor device 100 according to an embodiment of the present invention is described with reference to the accompanying drawing, semiconductor device 100 can be for
Such as two-side water cooling device.
As shown in Figure 1-Figure 3, semiconductor device 100 according to an embodiment of the present invention, comprising: radiator, power module with
And water pipe 3.
Specifically, the radiator has multiple heat radiating flat tubes 1, multiple 1 arranged stackeds of heat radiating flat tube, power module 2
It is located between two adjacent heat radiating flat tubes 1, and two end surfaces of power module 2 contact two opposite heat radiating flat tubes respectively
1 surface.For example, in the example of fig. 1, power module 2 has first surface and second surface, the first table of power module 2
Face can be contacted with opposite radiator flat tube 1, and the second surface of power module 2 can also connect with opposite radiator flat tube 1
Touching.Thus be conducive to that power module 2 is made preferably to radiate.
And the surface of at least one in power module 2 and two adjacent heat radiating flat tubes 1 is welded.That is, can be with
It is that the surface of first surface and the corresponding radiator flat tube 1 of power module 2 is welded, is also possible to the second table of power module 2
It is welded with the surface of corresponding radiator flat tube 1 in face.It not only can realize between power module 2 and radiator flat tube 1
It is reliably connected, also helps the heat dissipation effect for improving power module 2.
Water pipe 3 is connected into thermal dissipating path with heat radiating flat tube 1.Thus, it is possible to for the power module 2 of fever and electronic component etc.
Good heat dissipation path is provided, ensure that the normal work of power module 2.
For example, water pipe 3 may include water inlet pipe 31 and outlet pipe 32, cooling water can flow through multiple dissipate via water inlet pipe 31
Hot flat tube 1 is discharged via outlet pipe 32 again after exchanging heat with power module 2.
Semiconductor device 100 according to an embodiment of the present invention, by making power module 2 and two adjacent heat radiating flat tubes 1
In at least one surface welding, and water pipe 3 is made to be connected into thermal dissipating path with heat radiating flat tube 1.Thus, it is possible to for the power of fever
Module 2 and electronic component etc. provide good heat dissipation path, ensure that the normal work of power module 2.
Optionally, welding solder used may include at least one of tin, lead and silver.Thus, it is possible to pass through solder
It preferably radiates, to advantageously ensure that the service performance of power module 2.
According to one embodiment of present invention, two end faces of power module 2 are welded with the surface of opposite heat radiating flat tube 1
It connects.That is, the first surface and second surface of power module 2 can be welded with the surface of opposite heat radiating flat tube 1.By
This can not only guarantee the connection reliability of power module 2 Yu opposite heat radiating flat tube 1, and also helping makes power by solder
Module 2 preferably radiates.
For example, referring to Fig. 2, solder is used to dissipate by welding with corresponding two end faces of power module 2
Hot flat tube 1 is attached.The first surface A and second surface B of power module 2, and first surface A and second are illustrated in figure
Surface B is welded with the surface of opposite heat radiating flat tube 1, can be between first surface A and the surface of opposite heat radiating flat tube 1
It is welded by solder layer 5, can also be welded by solder layer 5 between second surface B and the surface of opposite heat radiating flat tube 1.
Since weld bonds layer is all by solder, heat between two end faces and corresponding heat radiating flat tube 1 of power module 2
It is higher to lead efficiency, obtains higher heat dissipation performance.By heat spreader structures optimization or process modification, two-sided welding can be completely real
It is existing.
According to one embodiment of present invention, the end surface of power module 2 and opposite heat radiating flat tube 1 weld, and
Thermal interface material layer 4 is set between another end surfaces of power module 2 and opposite heat radiating flat tube 1.As a result, power module
2 end surface can be radiated by welding solder used, and another end surfaces of power module 2 can pass through hot interface
Material layer 4 radiates, and is conducive to the heat dissipation effect for improving power module 2, improves the use reliability of power module 2.
The single fillet welded technique of power module 2 can be completely achieved, so that the single heat dissipation channel of semiconductor device 100 is removable
Dress, replaceable single radiator passage and power module 2.
For example, referring to Fig. 3, the one side of power module 2 is connected with radiator plane by welding with solder
It connects, the another side of power module 2 is attached with thermal interfacial material and radiator plane.The of power module 2 is illustrated in figure
It can be connected by thermal interface material layer 4 between one surface A and the surface of opposite heat radiating flat tube 1, the second table of power module 2
It can be welded by solder layer 5 between face B and the surface of opposite heat radiating flat tube 1.
Certainly, can be connected by thermal interface material layer 4 between second surface B and the surface of opposite heat radiating flat tube 1,
It can be welded by solder layer 5 between first surface A and the surface of opposite heat radiating flat tube 1.
The thermal coefficient of thermal interface material layer 4 is very low < 10W/ (mk), and the thermal coefficient of solder layer 5 can reach tens
W/ (mk) or more；Material thermal conductivity is bigger, then the thermal resistance of material itself is with regard to smaller, heating conduction is more preferable, radiates more preferably,
Temperature of power module is lower, and reliability is also higher.
Compared with using the method for thermal interfacial material, the mode of welding can reduce entire thermal resistance nearly 40%, can significantly drop
The operating temperature of low power module 2, to improve the service life of power module 2 and power-converting device.Thermal resistance reduces nearly 40%；
Improve radiating efficiency；Improve contact interface reliability, service life；The operating temperature for reducing power module 2, improves power
Reliability, stability and the service life of module 2.
The first surface A of power module 2 is welded with radiator plane by solder layer 5；The second surface B of power module 2
It is filled with radiator plane using thermal interface material layer 4 and is compressed using external force.Solder is mainly made of tin and lead, also containing silver
Equal trace meters ingredient.The uniform solder application in the surface of power module 2 (paste, hereinafter referred to as tin cream) is welded with vacuum back-flow
Technique is completed welding and is bonded completely with spreader surface.
Vacuum back-flow Welding: firstly, improving vacuum back-flow brazier cavity temperature by control, inhale tin cream liquefaction completely
Attached power module 2 and radiator plane, then control reduces furnace chamber temperature, so that tin cream is solidified rapidly, reaches the mesh of welding
's.The advantages of this technique be high reliablity, solder joint without cavity, ratio of defects it is low, using maturation.
According to some embodiments of the present invention, 2 liang of uniform solder applications of end surfaces of power module, and power module 2 is extremely
Few end surface is bonded and welds completely with radiator (such as radiator flat tube 1) surface.For example, it may be power module 2
First surface A is bonded and welds completely with spreader surface, is also possible to the second surface B and spreader surface of power module 2
It is bonded and welds completely.Be conducive to provide good dissipate for the power module 2 of fever and electronic component etc. by solder as a result,
Hot path ensure that the normal work of power module 2.
Optionally, at least one power module 2 is equipped between every two adjacent heat radiating flat tubes 1.For example, per adjacent
A power module 2 or multiple power modules 2 can be equipped between two heat radiating flat tubes 1.Thus, it is possible to fit according to actual needs
The number of power module 2 is arranged in answering property, and semiconductor device 100 is fabricated to different specifications, facilitates selection.
According to one embodiment of present invention, two end faces of power module 2 surface with opposite heat radiating flat tube 1 respectively
Fitting.That is, the first surface A of power module 2 can be bonded with the surface of opposite heat radiating flat tube 1, and second surface B
It can also be bonded with the surface of opposite heat radiating flat tube 1.As a result, the heat that power module 2 generates at work can lead to
It crosses heat radiating flat tube 1 further to export, to advantageously ensure that the service performance of power module 2.
According to one embodiment of present invention, chip is equipped in power module 2, and power module 2 is close to chip one end
It is welded with opposite heat radiating flat tube 1.Setting position of the chip in power module 2 can be asymmetric about power module 2, so that
Chip is unequal to the distance between two adjacent heat radiating flat tubes 1, by making power module 2 close to chip one end and opposite
Heat radiating flat tube 1 welds, and the heat that power module 2 generates can be exported by welding solder used, is conducive to improve power mould
The heat dissipation effect of block 2.
For example, the ratio of chip to the distance between two end faces of power module 2 can be the present invention such as 1:2
This is not especially limited.
Power module 2 is welded with solder using the technique of welding close to chip one end；Power module 2 is far from chip one
End can be fitted closely by uniform scumbling thermal interface material layer 4 with spreader surface.It has structure simple, easy to process,
Performance is stablized, excellent heat dissipation performance, makes full use of the heat-sinking capability of two-sided water cooling to carry out module heat dissipating, improves power module 2
Stability reduces 2 crash rate of power module, is improved the heat dissipation performance of entire semiconductor device 100.
Referring to Fig.1, according to one embodiment of present invention, heat radiating flat tube 1 is strip, and both ends of heat radiating flat tube 1
It is respectively equipped with water hole 11, water hole 11 can connect water pipe 3.As a result, water flow can be flowed via water inlet pipe 31 passes through water
Hole 11 enters multiple heat radiating flat tubes 1, is discharged again via outlet pipe 32 after exchanging heat with power module 2, realizes dissipating to power module 2
Heat.
Cooling water enters semiconductor device 100 by water inlet pipe 31, flows through in heat radiating flat tube 1, corresponding heat radiating flat tube plane
It is bonded by solder layer 5 with the one side of power module 2, the heat that power module 2 generates is bonded therewith by the way that solder is thermally conductive
Cooling water in heat radiating flat tube 1 is taken away, and cooling water is discharged from outlet pipe 32.The another side of power module 2 and corresponding heat dissipation are flat
1 plane of pipe is fitted closely by thermal interface material layer 4.Power module 2 generate heat by thermal interface material layer 4 it is thermally conductive by with
Fitting heat radiating flat tube 1 in cooling water take away.Thermal interface material layer 4 and 1 plane of heat radiating flat tube pass through to entire radiator
The mode for applying external force is compressed.
The vehicle of embodiment according to a second aspect of the present invention, including above-mentioned semiconductor device 100.As a result, by institute
The semiconductor device 100 that above-mentioned first aspect embodiment is set on vehicle is stated, the heat dissipation performance for improving vehicle is conducive to.
Other of semiconductor device 100 according to an embodiment of the present invention are constituted and are operated for ordinary skill people
Member for be all it is known, be not detailed herein.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means particular features, structures, materials, or characteristics described in conjunction with this embodiment or example
It is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms need not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be any
It can be combined in any suitable manner in a or multiple embodiment or examples.In addition, without conflicting with each other, the technology of this field
The feature of different embodiments or examples described in this specification and different embodiments or examples can be combined by personnel
And combination.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (10)
1. a kind of semiconductor device characterized by comprising
Radiator, the radiator have multiple heat radiating flat tubes, multiple heat radiating flat tube arranged stackeds；
Power module, the power module is located between two adjacent heat radiating flat tubes, and two end surfaces of the power module
The surface of opposite heat radiating flat tube, and the table of at least one in the power module and two adjacent heat radiating flat tubes are contacted respectively
Face welding；
Water pipe, the water pipe are connected into thermal dissipating path with the heat radiating flat tube.
2. semiconductor device according to claim 1, which is characterized in that two end faces of the power module are and relatively
Heat radiating flat tube surface welding.
3. semiconductor device according to claim 1, which is characterized in that the end surface of the power module and opposite
Heat radiating flat tube welding, and thermal interface material layer is set between another end surfaces and opposite heat radiating flat tube of the power module.
4. semiconductor device according to any one of claim 1-3, which is characterized in that weld solder used include tin,
At least one of lead and silver.
5. semiconductor device according to any one of claim 1-3, which is characterized in that two end surfaces of power module
Uniform solder application, and at least end surface of the power module is bonded and welds completely with spreader surface.
6. semiconductor device according to claim 5, which is characterized in that the power module and the radiator flat tube are logical
Cross the welding of vacuum back-flow Welding.
7. semiconductor device according to any one of claim 1-3, which is characterized in that per two adjacent heat dissipations
At least one described power module is equipped between flat tube.
8. semiconductor device according to claim 1, which is characterized in that two end faces of the power module respectively with phase
Pair heat radiating flat tube surface fitting.
9. semiconductor device according to claim 1, which is characterized in that be equipped with chip in the power module, and described
Power module is welded close to one end of chip and opposite heat radiating flat tube.
10. a kind of vehicle, which is characterized in that including semiconductor device according to claim 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710589646.1A CN109285817A (en) | 2017-07-19 | 2017-07-19 | Semiconductor device and vehicle with it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710589646.1A CN109285817A (en) | 2017-07-19 | 2017-07-19 | Semiconductor device and vehicle with it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109285817A true CN109285817A (en) | 2019-01-29 |
Family
ID=65184356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710589646.1A Pending CN109285817A (en) | 2017-07-19 | 2017-07-19 | Semiconductor device and vehicle with it |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109285817A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006190972A (en) * | 2004-12-08 | 2006-07-20 | Mitsubishi Electric Corp | Power semiconductor device |
| CN1820366A (en) * | 2003-12-24 | 2006-08-16 | 丰田自动车株式会社 | Cooling apparatus of electric device |
| CN103999213A (en) * | 2011-12-20 | 2014-08-20 | 丰田自动车株式会社 | Semiconductor module |
| CN205069618U (en) * | 2015-09-29 | 2016-03-02 | 比亚迪股份有限公司 | Power module and vehicle that has it |
| CN205177816U (en) * | 2015-11-17 | 2016-04-20 | 谢彦君 | Semiconductor module |
| CN207282488U (en) * | 2017-07-19 | 2018-04-27 | 惠州比亚迪实业有限公司 | Semiconductor device and there is its vehicle |
-
2017
- 2017-07-19 CN CN201710589646.1A patent/CN109285817A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1820366A (en) * | 2003-12-24 | 2006-08-16 | 丰田自动车株式会社 | Cooling apparatus of electric device |
| JP2006190972A (en) * | 2004-12-08 | 2006-07-20 | Mitsubishi Electric Corp | Power semiconductor device |
| CN103999213A (en) * | 2011-12-20 | 2014-08-20 | 丰田自动车株式会社 | Semiconductor module |
| CN205069618U (en) * | 2015-09-29 | 2016-03-02 | 比亚迪股份有限公司 | Power module and vehicle that has it |
| CN205177816U (en) * | 2015-11-17 | 2016-04-20 | 谢彦君 | Semiconductor module |
| CN207282488U (en) * | 2017-07-19 | 2018-04-27 | 惠州比亚迪实业有限公司 | Semiconductor device and there is its vehicle |
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Effective date of registration: 20210210 Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Applicant after: BYD Semiconductor Co.,Ltd. Address before: 518118 BYD Road, Pingshan New District, Shenzhen, Guangdong 3009 Applicant before: BYD Co.,Ltd. |