CN109273379A - A kind of method and apparatus of detection crystal round fringes photoresist removal width - Google Patents
A kind of method and apparatus of detection crystal round fringes photoresist removal width Download PDFInfo
- Publication number
- CN109273379A CN109273379A CN201811495760.9A CN201811495760A CN109273379A CN 109273379 A CN109273379 A CN 109273379A CN 201811495760 A CN201811495760 A CN 201811495760A CN 109273379 A CN109273379 A CN 109273379A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- round fringes
- crystal round
- removal
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
This application discloses a kind of method and apparatus of detection crystal round fringes photoresist removal width.This method utilizes the crystal column surface after the removal of inclined-plane scanning machine scanning wafer edge bead, to obtain wafer radius, crystal round fringes photoresist removal after remaining PR profile on point to wafer geometric center maximum distance and minimum range, then, the removal width of crystal round fringes photoresist is calculated according to these parameters of acquisition.Therefore, based on this method, the parameter that the removal width of crystal round fringes photoresist can be obtained according to inclined-plane scanning machine is calculated, in the method, without manually measuring any supplemental characteristic, therefore, compared to the prior art, method provided by the present application improves the precision of measurement result, and, the problem of avoiding cumbersome existing for manually measurement data and inefficiency, this method being capable of easy rapidly detection crystal round fringes photoresist removal width.
Description
Technical field
This application involves technical field of manufacturing semiconductors more particularly to a kind of detection crystal round fringes photoresist to remove width
Method and apparatus.
Background technique
Photoetching process as push ic manufacturing technology critical process all the time by the concern of industry.Photoetching
Technique includes three steps: photoresist spin coating, exposure, development.As the first step of photoetching process, the quality of photoresist coating
Directly affect the yield rate of subsequent technique.
Existing photoresist coating is general by the way of spin coating, and spin coating refers to the rotation being fixed on wafer on spin coating board
In shaft, the coating of photoresist is carried out in the state that wafer is in rotation, so that photoresist is distributed in wafer using centrifugal force
Surface.The photoresist thickness that the center of wafer is formed in the way of spin coating is uniform, but due to crystal round fringes air-flow
Relative velocity is very big, and remaining glue is caused to solidify quickly, is formed to form the photoresist of accumulation in crystal round fringes.On wafer side
The photoresist of the accumulation of edge is easy to happen removing in subsequent technique or generates particle on wafer, and then influences central area
Graph area transfer so that being unable to get good figure.In addition, the accumulation of crystal round fringes photoresist also will cause board pollution
The problems such as.Therefore, after the spin coating of photoresist, it generally will do it the photoresist of removal crystal round fringes.The removal crystal round fringes light
The process of photoresist is known as the removal (Edge Bead Removal, EBR) of edge bead.
In order to which inside wafer photoresist in homogeneous thickness will not be got rid of while guaranteeing to remove edge bead, need
After EBR process, to need to detect the removal width of crystal round fringes photoresist, to determine if to meet technique requirement, in turn
Adjust the process conditions of EBR process.
Currently, existing detection method is usually to be completed by Facilities Engineer using vernier caliper manual measurement.It is measured
As a result precision is lower.Moreover, because be not uniformity in all directions of crystal round fringes, therefore for the accuracy of measurement,
Multiple measurement points, such as equally distributed four points generally are set at the edge of wafer, complete the measurement of multiple measurement points, entirely
Measurement process is comparatively laborious and inefficiency.
Summary of the invention
In view of this, this application provides a kind of method and apparatus of detection crystal round fringes photoresist removal width, with reality
Existing easy rapidly detection crystal round fringes photoresist removes width, and improves the measurement essence of crystal round fringes photoresist removal width
Degree.
In order to solve the above-mentioned technical problem, the application adopts the technical scheme that
The first aspect of the application provides a kind of method of the removal width of detection crystal round fringes photoresist comprising:
Wafer is provided, photoresist is coated on a surface of the wafer, and is coated in the crystal round fringes photoresist and goes
It removes；
It is coated with the crystal column surface of photoresist, using the scanning of inclined-plane scanning machine to obtain wafer radius, crystal round fringes light
Photoresist removal after remaining PR profile on point to wafer geometric center maximum distance and minimum range；
According to the wafer radius, the maximum distance and the minimum range, the removal of crystal round fringes photoresist is obtained
Width.
It is obtained as a kind of possible implementation according to the wafer radius, the maximum distance and the minimum range
The removal width for taking crystal round fringes photoresist, specifically includes:
According to the wafer radius and the maximum distance, the minimum widith of crystal round fringes photoresist removal is calculated；
According to the wafer radius and the minimum range, the maximum width of crystal round fringes photoresist removal is calculated.
As a kind of possible implementation, after the removal width section for obtaining crystal round fringes photoresist, also wrap
It includes:
Whether the removal width for verifying the crystal round fringes photoresist is located at the default removal width of crystal round fringes photoresist
In section, if so, determining that the removal width of crystal round fringes photoresist meets technique requirement.
As a kind of possible implementation, the method also includes:
It is surplus after obtaining the wafer and the removal of crystal round fringes photoresist according to the maximum width and the minimum widith
The eccentricity of remaining PR profile.
It is described according to the maximum width and the minimum widith as a kind of possible implementation, obtain the crystalline substance
The eccentricity of remaining PR profile after the removal of round and crystal round fringes photoresist, specifically includes:
The bias of remaining PR profile after obtaining the wafer and the removal of crystal round fringes photoresist according to the following formula
Away from；
Eccentricity=(maximum width-minimum widith)/2.
As a kind of possible implementation, after the removal using inclined-plane scanning machine scanning wafer edge bead
While crystal column surface, further includes:
The geometric center difference of remaining PR profile after obtaining wafer geometric center and the removal of crystal round fringes photoresist
First distance and second distance in two mutually orthogonal directions；
Remaining light according to the first distance and second distance, after obtaining the wafer and the removal of crystal round fringes photoresist
The eccentricity of photoresist profile.
The wafer and wafer are obtained according to the first distance and second distance as a kind of possible implementation
The eccentricity of remaining PR profile after edge bead removal, specifically includes:
The bias of remaining PR profile after obtaining the wafer and the removal of crystal round fringes photoresist according to the following formula
Away from；
As a kind of possible implementation, the remaining light obtained after the wafer and the removal of crystal round fringes photoresist
After the eccentricity of photoresist profile, further includes:
Verify whether the eccentricity is located at presupposed off-center away from section, if so, determining going for crystal round fringes photoresist
Except width meets technique requirement.
A kind of device of the removal width of detection crystal round fringes photoresist, comprising:
First acquisition unit, for being coated with the crystal column surface of photoresist using the scanning of inclined-plane scanning machine, to obtain crystalline substance
The maximum distance and most of the point on remaining PR profile after radius of circle, the removal of crystal round fringes photoresist to wafer geometric center
Small distance；Wherein, it is coated with photoresist on a surface of the wafer, and is coated in the crystal round fringes photoresist and gets rid of；
Second acquisition unit, for obtaining wafer according to the wafer radius, the maximum distance and the minimum range
The removal width of edge bead.
As a kind of possible implementation, described device further include:
Verification unit, for verifying the crystal round fringes after the removal width section for obtaining crystal round fringes photoresist
Whether the removal width of photoresist is located in the default removal width section of crystal round fringes photoresist, if so, determining wafer side
The removal width of edge photoresist meets technique requirement.
Compared to the prior art, the application has the advantages that
Based on above technical scheme it is found that the method for detection crystal round fringes photoresist removal width provided by the present application, benefit
Crystal column surface after being removed with inclined-plane scanning machine scanning wafer edge bead, to obtain wafer radius, crystal round fringes light
Photoresist removal after remaining PR profile on point to wafer geometric center maximum distance and minimum range, then, according to
These parameters obtained calculate the removal width of crystal round fringes photoresist.Therefore, it is based on this method, crystal round fringes photoresist
The parameter that removal width can be obtained according to inclined-plane scanning machine is calculated, and in the method, appoints without manually measurement
What supplemental characteristic, therefore, compared to the prior art, method provided by the present application improves the precision of measurement result, moreover, avoiding
Manually the problem of cumbersome and inefficiency existing for measurement data, this method easy can rapidly detect wafer side
Edge photoresist removes width.
Detailed description of the invention
In order to which the specific embodiment of the application is expressly understood, used when the application specific embodiment is described below
Attached drawing do a brief description.It should be evident that these attached drawings are only the section Examples of the application.
Fig. 1 is a kind of method flow signal of the removal width of detection crystal round fringes photoresist provided by the embodiments of the present application
Figure；
Fig. 2 is wafer top view provided by the embodiments of the present application；
Fig. 3 is the parameters schematic diagram provided by the embodiments of the present application got；
Fig. 4 is that the method flow of the removal width of another detection crystal round fringes photoresist provided by the embodiments of the present application shows
It is intended to；
Fig. 5 is that the method flow of the removal width of another detection crystal round fringes photoresist provided by the embodiments of the present application shows
It is intended to；
Fig. 6 is the parameters schematic diagram provided by the embodiments of the present application got；
Fig. 7 is a kind of apparatus structure meaning of the removal width of detection crystal round fringes photoresist provided by the embodiments of the present application
Figure.
Specific embodiment
Before introducing the application specific embodiment, EBR technique is introduced first.
During photoresist spin coating, extra glue can be shifted onto the edge of wafer by centrifugal force, largely be thrown off crystalline substance
Circle, some remains in crystal round fringes.Since crystal round fringes air-flow relative velocity is very big, remaining glue is caused to solidify quickly,
Form the edge of protuberance.Under the action of surface tension, a small amount of glue flows to backside of wafer even along edge, to backside of wafer
It pollutes.And this part glue is easy to happen the figure for removing and influencing other parts, or pollutes, and needs in spin coating knot
It is removed immediately after beam.
The method for removing crystal round fringes photoresist includes chemical method and optical method.
Wherein, detailed process is as follows for chemical method removal crystal round fringes photoresist: after the soft baking of photoresist, using propylene glycol monomethyl ether
Acetate (PGMEA) or methylene glycol ether acetate (EGMEA) trimming solvent spray on a small quantity in the positive and negative edge of wafer, and small
Heart control not reach photoresist effective coverage, i.e. photoresist central area in homogeneous thickness.
Optical method removes crystal round fringes photoresist, and detailed process is as follows: in wafer edge exposure (Wafer Edge
Exposure, WEE), after the exposure for completing figure, with laser explosure crystal round fringes, excitation chemical reaction is shown finally in this way
When shadow, the photoresist at edge is just dissolved in developer solution with exposure figure simultaneously.The technical indicator of WEE includes positioning accuracy and exposure
Two aspects of luminous intensity.It is required that determining the precision of notched wafer position within ± 0.2 °, the precision of edge exposure position can be with
Within ± 0.3mm, the power of edge exposure should be greater than 400mW/cm for control.
Above-mentioned crystal round fringes photoresist removal technique mainly has board control, and removal width can be wanted according to different technique
It asks and is set on board in advance.However, since the Machinery Control System of photoresist removal board is there may be error, so that practical
It removes width and setting value is inconsistent, or the region of removal width generates asymmetric offset on wafer, therefore, in EBR
After process, need to detect the removal width of crystal round fringes photoresist, to determine if to meet technique requirement.
As described in the background section, existing detection method is usually to be surveyed manually by Facilities Engineer using vernier caliper
Amount is completed.The precision of its measurement result is lower, moreover, because be not uniformity in all directions of crystal round fringes, therefore in order to
The accuracy of measurement is generally arranged multiple measurement points, such as equally distributed four points at the edge of wafer, completes multiple measurements
The measurement of point, entire measurement process is comparatively laborious and inefficiency.
In order to which the method for solving the problems, such as crystal round fringes photoresist removal width described above exists, this application provides
A method of detection crystal round fringes photoresist removes width.This method utilizes inclined-plane scanning machine scanning wafer edge bead
Crystal column surface after removal, to obtain the point on the remaining PR profile after wafer radius, the removal of crystal round fringes photoresist
To the maximum distance and minimum range of wafer geometric center, then, crystal round fringes photoetching is calculated according to these parameters of acquisition
The removal width of glue.Therefore, it is based on this method, the removal width of crystal round fringes photoresist can be obtained according to inclined-plane scanning machine
Parameter be calculated, in the method, without manually measuring any supplemental characteristic, therefore, compared to the prior art, this
Application provide method improve the precision of measurement result, moreover, avoid it is cumbersome existing for manually measurement data and
The problem of inefficiency, this method being capable of easy rapidly detection crystal round fringes photoresist removal width.
In order to be more clearly understood that the specific embodiment of the application, with reference to the accompanying drawing to the specific embodiment party of the application
Formula is described in detail.
Referring to Figure 1, it is provided by the embodiments of the present application detection crystal round fringes photoresist removal width method include with
Lower step:
S101: wafer is provided, is coated with photoresist on a surface of wafer, and crystal round fringes photoresist is got rid of.
It is to be appreciated that in the embodiment of the present application, wafer can be bare silicon wafer, i.e., it will form any device junction on wafer
Structure, in addition, wafer may be the wafer for being formed with device architecture.
As shown in Fig. 2, being coated with photoresist 22 on a surface of wafer 21 (generally on the front of wafer), it is located at wafer
The photoresist of edge removal is removed, and only remains with photoresist 22 in 21 central area of wafer.Wherein, O1For 21 geometry of wafer
Center, O2For the geometric center of photoresist 22.
S102: it is coated with the crystal column surface of photoresist, using the scanning of inclined-plane scanning machine to obtain wafer radius, wafer side
Edge photoresist removal after remaining PR profile on point to wafer geometric center maximum distance and minimum range.
This step can be with specifically: a surface is coated with photoresist, and the wafer that edge bead is removed is placed into
On inclined-plane scanning machine (Bevel Scan), the crystal column surface of photoresist is then coated with using the scanning of inclined-plane scanning machine, with
Obtain wafer radius, crystal round fringes photoresist removal after remaining PR profile on point to wafer geometric center maximum away from
From and minimum range.
As an example, obtain wafer radius, crystal round fringes photoresist removal after remaining PR profile on point arrive
The maximum distance and minimum range of wafer geometric center are respectively as shown in R, Dmax and Dmin in Fig. 3.
It is to be appreciated that inclined-plane scanning machine can detecte on wafer geometric center position and remaining PR profile
Therefore the position of each point can first calculate the position to wafer geometric center position of each point on remaining PR profile
The distance between, then again by comparing the size of each distance, to obtain the residue after the removal of crystal round fringes photoresist
The maximum distance and minimum range of point on PR profile to wafer geometric center.
It is to be appreciated that inclined-plane scanning machine is usually used to detection crystal round fringes and lacks in ic manufacturing technology field
It falls into.
S103: according to wafer radius, maximum distance and minimum range, the removal width of crystal round fringes photoresist is obtained.
Because in EBR process, since there may be errors for the Machinery Control System of photoresist removal board, so that actually going
Except width is inconsistent with setting value, or the region of removal width generates asymmetric offset on wafer, therefore, removes width
Width at the different location of region is possible to inconsistent, therefore, in order to relatively accurately measure the removal of crystal round fringes photoresist
Whether width meets technique requirement, available maximum value and minimum value to removal width, accordingly, as an example,
S103 can with specifically includes the following steps:
S1031: according to the wafer radius and the maximum distance, the minimum for calculating the removal of crystal round fringes photoresist is wide
Degree.
This step can be with specifically: calculates the difference between wafer radius R and maximum distance Dmax, which is wafer
The minimum widith Wmin of edge bead removal, the corresponding calculation formula of the step are as follows:
W min=R-D max (1)
S1032: according to the wafer radius and the minimum range, the maximum for calculating the removal of crystal round fringes photoresist is wide
Degree.
This step can be with specifically: calculates the difference between wafer radius R and minimum range Dmin, which is wafer
The minimum widith Wmax of edge bead removal, the corresponding calculation formula of the step are as follows:
W max=R-Dmin (2)
S104: whether the removal width for verifying the crystal round fringes photoresist is located at the default removal of crystal round fringes photoresist
In width section, if so, determining that the removal width of crystal round fringes photoresist meets technique requirement.
It is to be appreciated that in the embodiment of the present application, the default removal width section of crystal round fringes photoresist can be to meet
The removal width section for the crystal round fringes photoresist that technique requires.
As an example, this step can be with specifically:
Firstly, being obtained according to the minimum widith Wmin and maximum width Wmax of the above-mentioned crystal round fringes photoresist removal got
The width section [Wmin, Wmax] removed to crystal round fringes photoresist, then, the width area of verification crystal round fringes photoresist removal
Between [Wmin, Wmax] whether be located at crystal round fringes photoresist default removal width section in, if so, determine crystal round fringes light
The removal width of photoresist meets technique requirement, if not, determining that the removal width of crystal round fringes photoresist does not meet technique requirement.
The above are one kind of the method for the removal width of detection crystal round fringes photoresist provided by the embodiments of the present application is specific
Implementation.Crystalline substance in the specific implementation, after can use the removal of inclined-plane scanning machine scanning wafer edge bead
Circular surfaces, to obtain point on the remaining PR profile after wafer radius, the removal of crystal round fringes photoresist to wafer geometry
The maximum distance and minimum range at center, then, the removal that crystal round fringes photoresist is calculated according to these parameters of acquisition is wide
Degree.Therefore, it is based on this method, the parameter that the removal width of crystal round fringes photoresist can be obtained according to inclined-plane scanning machine calculates
It obtains, it is in the method, therefore, compared to the prior art, provided by the present application without manually measuring any supplemental characteristic
Method improves the precision of measurement result, moreover, avoiding cumbersome and inefficiency existing for manually measurement data
Problem, this method being capable of easy rapidly detection crystal round fringes photoresist removal width.
As another specific implementation of the application, in order to which the removal for more accurately measuring crystal round fringes photoresist is wide
Whether degree meets technique requirement, and present invention also provides another tools of the method for the removal width of detection crystal round fringes photoresist
Body implementation.
Refer to Fig. 4, the method for the removal width of another detection crystal round fringes photoresist provided by the embodiments of the present application
The following steps are included:
S401 to S403 is identical as S101 to S103, for the sake of brevity, is not described in detail herein.
S404: according to the maximum width and the minimum widith, the wafer and the removal of crystal round fringes photoresist are obtained
The eccentricity of remaining PR profile afterwards.
As an example, schematic diagram shown in Figure 3, sets wafer radius as R, the radius of remaining photoresist is r, maximum
Width is Wmax, and minimum widith Wmin, eccentricity X then have following equation relationship:
2r+W max+W min=2R (3)
2r+W max+W min=R+X+r+W min (4)
Then according to the remaining photoresist after equation (3) and the removal of (4) available described wafer and crystal round fringes photoresist
The calculation formula of the eccentricity of profile is as follows:
X=(Wmax-Wmin)/2 (5)
In this way, the eccentricity of the remaining PR profile after wafer and the removal of crystal round fringes photoresist is for maximum width and most
The half of small width differential.
S405: whether the removal width for verifying the crystal round fringes photoresist is located at the default removal of crystal round fringes photoresist
In width section, and verifies the eccentricity and whether be located at presupposed off-center away from section, if two check results are to be,
Determine that the removal width of crystal round fringes photoresist meets technique requirement, if at least one check results is no, it is determined that wafer
The removal width of edge bead does not meet technique requirement.
It is to be appreciated that in the embodiment of the present application, the default removal width section of crystal round fringes photoresist and above-mentioned implementation
Default removal width section in example is identical, and for the sake of brevity, details are not described herein.
Presupposed off-center can be the eccentricity section for meeting technique requirement away from section.
In addition, whether the removal width that this step verifies the crystal round fringes photoresist is located at the pre- of crystal round fringes photoresist
If the removal for removing the verification crystal round fringes photoresist in the specific implementation and above-described embodiment in width section is wide
The specific implementation whether degree is located in the default removal width section of crystal round fringes photoresist is identical, for the sake of brevity,
It is not described in detail herein.
It is to be appreciated that in the above-described embodiments, without limitation to the execution sequence of S403 and S404, can first carry out
S403, then S404 is executed, S404 can also be first carried out, then execute S403, also may be performed simultaneously S403 and S404.
The above are the tools of the method for the removal width of another detection crystal round fringes photoresist provided by the embodiments of the present application
Body implementation.It is brilliant in addition to being determined according to this parameter of the removal width of crystal round fringes photoresist in the specific implementation
Whether the removal width of the edge of the circle photoresist meets outside technique requirement, can also be according to the eccentricity between wafer and photoresist come really
Whether the removal width for determining crystal round fringes photoresist meets technique requirement, and therefore, which can be improved and determine crystalline substance
Whether the removal width of the edge of the circle photoresist meets the accuracy rate of technique requirement.
In addition, in the above-described embodiments, eccentricity is according to the remaining PR profile after the removal of crystal round fringes photoresist
On the maximum distance and minimum distance calculation of point to wafer geometric center obtain.In fact, another reality as the application
Example is applied, which can also be according to the several of the remaining PR profile after wafer geometric center and the removal of crystal round fringes photoresist
What distance of center respectively in two mutually orthogonal directions is calculated.Referring specifically to following embodiment.
Refer to Fig. 5, the method for the removal width of another detection crystal round fringes photoresist provided by the embodiments of the present application
The following steps are included:
S501 is identical as the S101 in above-described embodiment, for the sake of brevity, is not described in detail herein.
S502: it is coated with the crystal column surface of photoresist, using the scanning of inclined-plane scanning machine to obtain wafer radius, wafer side
The point on remaining PR profile after the removal of edge photoresist is gone back simultaneously to the maximum distance and minimum range of wafer geometric center
The geometric center of remaining PR profile after obtaining wafer geometric center and the removal of crystal round fringes photoresist is respectively in two phases
First distance and second distance in mutual vertical direction.
It is to be appreciated that when scanning machine scanning in inclined-plane is coated with the crystal column surface of photoresist, in addition to available to crystalline substance
The maximum distance and most of the point on remaining PR profile after radius of circle, the removal of crystal round fringes photoresist to wafer geometric center
Small distance, can also get wafer geometric center, in the geometry of the remaining PR profile after the removal of crystal round fringes photoresist
The heart, and two geometric center first distance in two mutually orthogonal directions and second distance can be got.
When in advance, when plane is built with rectangular coordinate system where wafer, then two geometric center is two sides of being mutually perpendicular to
Upward first distance and second distance can be respectively along in X-direction distance Xd and along in Y direction away from
From Yd.
As an example, Fig. 6 shows the parameters schematic diagram got in S502.
S503 is identical as above-mentioned S103, and for the sake of brevity, details are not described herein.
S504: according to the first distance and second distance, after obtaining the wafer and the removal of crystal round fringes photoresist
The eccentricity of remaining PR profile.
As an example, S504 can obtain the residue after the wafer and the removal of crystal round fringes photoresist according to the following formula
The eccentricity of PR profile:
S505 is identical as S405, for the sake of brevity, is not described in detail herein.
It is to be appreciated that in the above-described embodiments, without limitation to the execution sequence of S503 and S504, can first carry out
S503, then S504 is executed, S504 can also be first carried out, then execute S503, also may be performed simultaneously S503 and S504.
The above are the tools of the method for the removal width of another detection crystal round fringes photoresist provided by the embodiments of the present application
Body implementation.It is brilliant in addition to being determined according to this parameter of the removal width of crystal round fringes photoresist in the specific implementation
Whether the removal width of the edge of the circle photoresist meets outside technique requirement, can also be according to the eccentricity between wafer and photoresist come really
Whether the removal width for determining crystal round fringes photoresist meets technique requirement, and therefore, which can be improved and determine crystalline substance
Whether the removal width of the edge of the circle photoresist meets the accuracy rate of technique requirement.
The specific implementation of the method for the removal width of the detection crystal round fringes photoresist provided based on the above embodiment,
The embodiment of the present application also provides a kind of specific implementations of the device of the removal width of detection crystal round fringes photoresist.
Refer to Fig. 7, a kind of device packet of the removal width of detection crystal round fringes photoresist provided by the embodiments of the present application
It includes:
First acquisition unit 71, for being coated with the crystal column surface of photoresist using the scanning of inclined-plane scanning machine, to obtain
Wafer radius, crystal round fringes photoresist removal after remaining PR profile on point to wafer geometric center maximum distance and
Minimum range；Wherein, it is coated with photoresist on a surface of the wafer, and is coated in the crystal round fringes photoresist and removes
Fall；
Second acquisition unit 72, for obtaining brilliant according to the wafer radius, the maximum distance and the minimum range
The removal width of the edge of the circle photoresist.
As another alternative embodiment of the application, described device can also include:
Verification unit 73, for verifying the wafer side after the removal width section for obtaining crystal round fringes photoresist
Whether the removal width of edge photoresist is located in the default removal width section of crystal round fringes photoresist, if so, determining wafer
The removal width of edge bead meets technique requirement.
The above are the specific implementations of the device of the removal width of detection crystal round fringes photoresist provided by the embodiments of the present application
Mode.Wafer table by the specific implementation, after can use the removal of inclined-plane scanning machine scanning wafer edge bead
Face, to obtain point on the remaining PR profile after wafer radius, the removal of crystal round fringes photoresist to wafer geometric center
Maximum distance and minimum range the removal width of crystal round fringes photoresist is then calculated according to these parameters of acquisition.Cause
This, is based on the specific implementation, the parameter that the removal width of crystal round fringes photoresist can be obtained according to inclined-plane scanning machine
It is calculated, in the specific implementation, without manually measuring any supplemental characteristic, therefore, compared to the prior art,
Device provided by the present application improves the precision of measurement result, moreover, avoid existing for manually measurement data it is cumbersome with
And the problem of inefficiency, the device being capable of easy rapidly detection crystal round fringes photoresist removal width.
The above are the tools of the method and apparatus of the removal width of detection crystal round fringes photoresist provided by the embodiments of the present application
Body implementation.
Claims (10)
1. a kind of method of the removal width of detection crystal round fringes photoresist characterized by comprising
Wafer is provided, photoresist is coated on a surface of the wafer, and is coated in the crystal round fringes photoresist and gets rid of；
It is coated with the crystal column surface of photoresist, using the scanning of inclined-plane scanning machine to obtain wafer radius, crystal round fringes photoresist
The maximum distance and minimum range of the point on remaining PR profile after removal to wafer geometric center；
According to the wafer radius, the maximum distance and the minimum range, the removal width of crystal round fringes photoresist is obtained.
2. the method according to claim 1, wherein according to the wafer radius, the maximum distance and described
Minimum range obtains the removal width of crystal round fringes photoresist, specifically includes:
According to the wafer radius and the maximum distance, the minimum widith of crystal round fringes photoresist removal is calculated；
According to the wafer radius and the minimum range, the maximum width of crystal round fringes photoresist removal is calculated.
3. method according to claim 1 or 2, which is characterized in that the removal width for obtaining crystal round fringes photoresist
After section, further includes:
Whether the removal width for verifying the crystal round fringes photoresist is located at the default removal width section of crystal round fringes photoresist
It is interior, if so, determining that the removal width of crystal round fringes photoresist meets technique requirement.
4. according to the method described in claim 2, it is characterized in that, the method also includes:
Remaining light according to the maximum width and the minimum widith, after obtaining the wafer and the removal of crystal round fringes photoresist
The eccentricity of photoresist profile.
5. according to the method described in claim 4, it is characterized in that, described according to the maximum width and the minimum widith,
The eccentricity of remaining PR profile after obtaining the wafer and the removal of crystal round fringes photoresist, specifically includes:
The eccentricity of remaining PR profile after obtaining the wafer and the removal of crystal round fringes photoresist according to the following formula；
Eccentricity=(maximum width-minimum widith)/2.
6. the method according to claim 1, wherein described utilize the edge photoetching of inclined-plane scanning machine scanning wafer
Glue removal after crystal column surface while, further includes:
The geometric center of remaining PR profile after obtaining wafer geometric center and the removal of crystal round fringes photoresist is respectively two
First distance and second distance in a mutually perpendicular direction；
Remaining photoresist according to the first distance and second distance, after obtaining the wafer and the removal of crystal round fringes photoresist
The eccentricity of profile.
7. according to the method described in claim 6, it is characterized in that, according to the first distance and second distance, described in acquisition
The eccentricity of remaining PR profile after wafer and the removal of crystal round fringes photoresist, specifically includes:
The eccentricity of remaining PR profile after obtaining the wafer and the removal of crystal round fringes photoresist according to the following formula；
8. according to the described in any item methods of claim 4-7, which is characterized in that described to obtain the wafer and crystal round fringes light
After the eccentricity of remaining PR profile after photoresist removal, further includes:
Verify whether the eccentricity is located at presupposed off-center away from section, if so, determining that the removal of crystal round fringes photoresist is wide
Degree meets technique requirement.
9. a kind of device of the removal width of detection crystal round fringes photoresist characterized by comprising
First acquisition unit, for being coated with the crystal column surface of photoresist using the scanning of inclined-plane scanning machine, to obtain wafer half
Diameter, crystal round fringes photoresist removal after remaining PR profile on point to wafer geometric center maximum distance and most narrow spacing
From；Wherein, it is coated with photoresist on a surface of the wafer, and is coated in the crystal round fringes photoresist and gets rid of；
Second acquisition unit, for obtaining crystal round fringes according to the wafer radius, the maximum distance and the minimum range
The removal width of photoresist.
10. device according to claim 9, which is characterized in that described device further include:
Verification unit, for verifying the crystal round fringes photoetching after the removal width section for obtaining crystal round fringes photoresist
Whether the removal width of glue is located in the default removal width section of crystal round fringes photoresist, if so, determining crystal round fringes light
The removal width of photoresist meets technique requirement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811495760.9A CN109273379A (en) | 2018-12-07 | 2018-12-07 | A kind of method and apparatus of detection crystal round fringes photoresist removal width |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811495760.9A CN109273379A (en) | 2018-12-07 | 2018-12-07 | A kind of method and apparatus of detection crystal round fringes photoresist removal width |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109273379A true CN109273379A (en) | 2019-01-25 |
Family
ID=65187440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811495760.9A Pending CN109273379A (en) | 2018-12-07 | 2018-12-07 | A kind of method and apparatus of detection crystal round fringes photoresist removal width |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109273379A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1457510A (en) * | 2001-01-26 | 2003-11-19 | 株式会社应用视觉技术 | Apparatus and method of inspecting semiconductor wafer |
| CN101894827A (en) * | 2009-05-19 | 2010-11-24 | 中芯国际集成电路制造(上海)有限公司 | Test wafer for gluing and edge cleaning detection |
| CN102456594A (en) * | 2010-11-01 | 2012-05-16 | 无锡华润上华半导体有限公司 | Removed edge width detection method and device |
| CN102466979A (en) * | 2010-11-12 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Photoresist edge edge-wash data measuring system and measurement monitoring method |
-
2018
- 2018-12-07 CN CN201811495760.9A patent/CN109273379A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1457510A (en) * | 2001-01-26 | 2003-11-19 | 株式会社应用视觉技术 | Apparatus and method of inspecting semiconductor wafer |
| CN101894827A (en) * | 2009-05-19 | 2010-11-24 | 中芯国际集成电路制造(上海)有限公司 | Test wafer for gluing and edge cleaning detection |
| CN102456594A (en) * | 2010-11-01 | 2012-05-16 | 无锡华润上华半导体有限公司 | Removed edge width detection method and device |
| CN102466979A (en) * | 2010-11-12 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Photoresist edge edge-wash data measuring system and measurement monitoring method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8987634B2 (en) | Determining powder feed nozzle misalignment | |
| USRE45943E1 (en) | Measurement of overlay offset in semiconductor processing | |
| CN107367911B (en) | Alignment methods and to Barebone | |
| US20160369422A1 (en) | Method of adjusting plating apparatus, and measuring apparatus | |
| JP2021506133A5 (en) | ||
| JPS62209304A (en) | Method for measuring dimension | |
| CN110289224A (en) | A kind of accurate method for monitoring and improving square resistance and measure stability | |
| JP2015090315A (en) | Thickness measuring device, thickness measuring method, and corrosion depth measuring method | |
| CN105097594B (en) | The optimization method of ion implanted layer photoresist film thickness | |
| JP2000082658A (en) | Surface position detecting equipment, aligner and device manufacturing method | |
| CN109273379A (en) | A kind of method and apparatus of detection crystal round fringes photoresist removal width | |
| CN106340482B (en) | Automatic correction calibration method based on wafer corner and notch positioning | |
| JP6386732B2 (en) | Detection apparatus, detection method, and lithography apparatus | |
| CN105988310A (en) | Photo-etching method and wafer | |
| CN107305119A (en) | The scaling method and test platform of a kind of inclining test for the long optical flat of standard | |
| CN104713476B (en) | Coplane degree detection method and device | |
| WO2022160564A1 (en) | Monitor wafer measurement method, and measurement apparatus | |
| TW201007314A (en) | Method for repairing substrate | |
| US9366637B2 (en) | Method for establishing distortion properties of an optical system in a microlithographic measurement system | |
| KR101263745B1 (en) | Method for estimating angular position output error of rotary angular detection sensor equipped on electro-optical device | |
| CN110988910A (en) | ToF camera calibration device and calibration method | |
| CN115763430B (en) | Display panel and film thickness measuring method and structure thereof | |
| CN114107912B (en) | Coating device | |
| CN111947687B (en) | Detection element and detection method for light path verticality | |
| CN102566289A (en) | Method for testing diaphragm of illumining system of photoetching equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190125 |