CN115763430B - Display panel and film thickness measuring method and structure thereof - Google Patents
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- CN115763430B CN115763430B CN202211342816.3A CN202211342816A CN115763430B CN 115763430 B CN115763430 B CN 115763430B CN 202211342816 A CN202211342816 A CN 202211342816A CN 115763430 B CN115763430 B CN 115763430B
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 147
- 238000005259 measurement Methods 0.000 claims abstract description 126
- 239000011521 glass Substances 0.000 claims abstract description 104
- 238000012360 testing method Methods 0.000 claims description 19
- 238000010586 diagram Methods 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000691 measurement method Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005305 interferometry Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Abstract
The application discloses a display panel and a film thickness measuring method and a measuring structure thereof, wherein the display panel comprises a glass substrate, a film layer and a measuring mark; the film layer is arranged on the glass substrate; the measuring mark is arranged on the glass substrate, the cross section area of the measuring mark is reduced along with the increase of the distance between the cross section and the glass substrate, and the measuring mark is used for measuring the thickness of the film layer according to the size data of the measuring mark exposed on the film layer. The display panel of this application is through setting up the mark of measurationing on glass substrate, measures the rete thickness, and the measurement mode does not receive the influence of rete compactness, guarantees the accuracy and the homogeneity of rete thickness, guarantees display panel's precision.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a display panel, a method for measuring a thickness of a film thereof, and a test structure.
Background
The display panel is a main component of the display, and includes a first substrate and a second substrate disposed opposite to each other, and a film layer filled between the first substrate and the second substrate. The accuracy and uniformity of the film thickness is critical to display quality.
The film thickness measuring method of the existing display panel is carried out by measuring the optical path difference, single-point measurement and multi-point monitoring are needed for the film thickness at different positions, the time is long, the measuring method is easy to be influenced by the compactness of the film layer, the measuring error is larger, and the improvement of the precision of the display panel is not facilitated.
Disclosure of Invention
In order to solve the technical problems, the application provides a display panel, a film thickness measuring method and a testing structure thereof.
In order to solve the above problems, the present application provides a display panel, which includes a glass substrate, a film layer and a measurement mark; the film layer is arranged on the glass substrate; the measuring mark is arranged on the glass substrate, the cross section area of the measuring mark is reduced along with the increase of the distance between the cross section and the glass substrate, and the measuring mark is used for measuring the thickness of the film layer according to the dimension data of the measuring mark exposed on the film layer.
Optionally, the display panel includes a display area and a non-display area, and the measurement identifier is disposed on the glass substrate corresponding to the non-display area and/or the display area.
Optionally, the display area includes a plurality of display pixels, the measurement marks are disposed on the glass substrate corresponding to the display area, and the measurement marks are located between the display pixels.
Optionally, the shape of the projection of the measurement mark on the glass substrate is polygonal and/or circular.
Optionally, the measurement mark is at least one of a quadrangular pyramid, a cone, a quadrangular frustum and a truncated cone.
Optionally, the display panel includes a first substrate and a second substrate that are disposed opposite to each other, the measurement mark is located between the first substrate and the second substrate, and the measurement mark is used for supporting the first substrate and the second substrate.
Optionally, the measurement mark is in a quadrangular frustum shape and/or a quadrangular pyramid shape, and the projection area of the measurement mark on the glass substrate is at least 25um 2 The height of the measurement mark is at least 1um.
In order to solve the above problems, the present application provides a method for measuring a thickness of a film layer of a display panel, including: providing a glass substrate, wherein a measuring mark is arranged on the glass substrate, and the cross section area of the measuring mark is reduced along with the increase of the distance between the cross section and the glass substrate; a film layer is arranged on the glass substrate; acquiring size data of the measurement mark exposed on the film layer; thickness data of the film layer is calculated based on the dimensional data.
Optionally, the step of providing the measurement identifier on the glass substrate includes: providing an insulating layer on the glass substrate; placing a mask plate with a hole with a preset shape on the insulating layer; exposing the insulating layer; developing the insulating layer after exposure treatment to obtain the measuring mark, wherein the shape of the measuring mark corresponds to the shape of the preset opening.
Optionally, before the step of disposing a film layer on the glass substrate, the film layer thickness measurement method further includes: acquiring the size parameter of the measurement mark; and establishing a measurement model based on the dimension parameter, wherein the measurement model comprises a relative relation between the dimension parameter and the thickness data.
In order to solve the above problems, the present application provides a test structure, which measures the thickness of a film layer of a display panel by using the film layer thickness measuring method as described in any one of the above.
The application provides a display panel and a film thickness measuring method and a measuring structure thereof, wherein the display panel comprises a glass substrate, a film layer and a measuring mark; the film layer is arranged on the glass substrate; the measuring mark is arranged on the glass substrate, the cross section area of the measuring mark is reduced along with the increase of the distance between the cross section and the glass substrate, and the measuring mark is used for measuring the thickness of the film layer according to the size data of the measuring mark exposed on the film layer. The display panel of this application is through setting up the mark of measurationing on glass substrate, measures the rete thickness, and the measurement mode does not receive the influence of rete compactness, guarantees the accuracy and the homogeneity of rete thickness, guarantees display panel's precision.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. Wherein:
FIG. 1 is a schematic diagram of a conventional interferometry for measuring film thickness;
FIG. 2 is a flow chart of an embodiment of a display panel provided in the present application;
FIG. 3 is a schematic diagram showing the structure of testing the thickness and cross-sectional area of the display panel;
fig. 4 is a schematic structural diagram of a second embodiment of a display panel provided in the present application;
fig. 5 is a schematic structural view of a third embodiment of a display panel provided in the present application;
FIG. 6 is a schematic diagram illustrating an embodiment of a measurement tag provided herein;
FIG. 7 is a flow chart of an embodiment of a method for measuring film thickness according to the present application;
FIG. 8 is a flow chart of another embodiment of a method for measuring film thickness provided herein;
FIG. 9 is a schematic diagram of an embodiment of a test structure provided herein;
FIG. 10 is a flow chart of yet another embodiment of a film thickness measurement method provided herein;
FIG. 11 is a schematic diagram of another embodiment of a test structure provided herein.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
It should be noted that, in the embodiment of the present application, directional indications (such as up, down, left, right, front, and rear … …) are referred to, and the directional indications are merely used to explain the relative positional relationship, movement conditions, and the like between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present application, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be regarded as not exist and not within the protection scope of the present application.
Referring to fig. 1, fig. 1 is a schematic diagram of a conventional interferometry for measuring film thickness. As shown in fig. 1, the film thickness greatly affects the yield and performance of the device, and the conventional film thickness measurement method generally calculates the film thickness by measuring the optical path difference of two coherent lights, and according to the principle of light interference, when the film is perpendicularly irradiated with monochromatic light, incident light of the monochromatic light is reflected at the first surface and the second surface of the film, and the film thickness can be calculated by measuring the light intensity distribution received by the two reflected lights on the observation plane.
The existing film thickness measuring method is greatly influenced by the density of the film, and when the density of the film is uneven, a plurality of measuring points need to be tested, so that the measuring time is long, the measuring precision is low, the precision of the display panel is low, and the wide application of the display panel is not facilitated.
In view of this, this application provides a display panel, is provided with the measurement sign on this display panel's the glass substrate, can directly show in the size data of rete through the measurement sign and measure the rete, simple structure can show improvement production efficiency.
Referring to fig. 2-3, fig. 2 is a flow chart of an embodiment of a display panel provided in the present application, and fig. 3 is a schematic diagram of a change test structure of a film thickness and a cross-sectional area of the display panel provided in the present application. As shown in fig. 2, the display panel includes a glass substrate 110, a film 310, and a measurement mark 210; the film layer 310 is disposed on the glass substrate 110; the measurement mark 210 is disposed on the glass substrate 110, the cross-sectional area of the measurement mark 210 decreases with the distance between the cross-section and the glass substrate 110, and the measurement mark 210 is used for measuring the thickness of the film 310 according to the size data of the measurement mark 210 exposed on the film 310.
The glass substrate 110 is a carrier glass used for manufacturing a display panel, the display panel includes a first substrate and a second substrate, and the glass substrate 110 may be the first substrate or the second substrate. The glass substrate 110 is provided with a measurement mark 210, and the cross-sectional area of the measurement mark 210 decreases with the distance between the cross-section and the glass substrate 110, i.e. the measurement mark 210 has a first inclined plane and a second inclined plane, and the angle openings of the first inclined plane and the second inclined plane face to one side of the glass substrate 110 near the measurement mark 210.
The measurement mark 210 may be an insulating member and disposed at a plurality of positions on the glass substrate 110, for example, the display panel includes a display area 320, a non-display area 330, and a plurality of electrical devices, and the measurement mark 210 may be disposed on the glass substrate 110 opposite to the display area 320 and/or the non-display area 330, or may be disposed at a position on the glass substrate 110 where no electrical device is disposed, so as to obtain a thickness variation condition of the film layer 310 by measuring a cross-sectional area variation of the measurement mark 210.
The glass substrate 110 has a film layer 310 disposed thereon, and in particular, the film layer 310 may be formed by pouring, coating, etc., and the film layer 310 includes, but is not limited to, a liquid crystal film layer 310. The film layer 310 has a first surface and a second surface, the first surface is a side of the film layer 310 away from the glass substrate 110, the second surface is a side of the film layer 310 close to the glass substrate 110, and the measurement mark 210 is used for measuring a thickness of the film layer 310 according to dimension data of the measurement mark 210 exposed on the film layer 310 (i.e. exposed on the first surface), where the dimension data includes, but is not limited to, parameters such as a length, a width, a radius, a diameter, an area, a side length, and the like.
As shown in fig. 3 (a) and (b), when the thickness of the film 310 is H, the length of the cross section of the measurement mark 210 exposed on the film 310 is L, and the width thereof is W; as shown in fig. 4 (c) and (d), when the thickness of the film 310 is H '(H' > H), the length L '(L' < L) and the width W '(W' < W) of the cross section of the measurement mark 210 exposed to the film 310 are measured, and thus the thickness data of the film 310 can be calculated by measuring the dimension data of the first surface of the film 310.
In the embodiment of the application, the thickness of the film layer 310 is measured by setting the measurement mark 210 on the glass substrate 110, the measurement mode is not affected by the compactness of the film layer, the accuracy and uniformity of the thickness of the film layer 310 are ensured, and the accuracy of the display panel is ensured.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a second embodiment of a display panel provided in the present application. As shown in fig. 4, in an embodiment, the display panel includes a display area 320 and a non-display area 330, and the measurement mark 210 is disposed on the glass substrate 110 corresponding to the non-display area 330 and/or the display area 320.
Specifically, the display area 320 is an image display area 320 of the display panel, and the non-display area 330 is other areas of the display panel than the display area 320, and the non-display area 330 includes, but is not limited to, a sealing area, a gasket area, and the like. The measurement mark 210 corresponds to the display area 320 and/or the non-display area 330 of the display panel at the setting position of the glass substrate 110. For example, the measurement mark 210 may be disposed on the glass substrate 110 corresponding to the display area 320, the measurement mark 210 may be disposed on the glass substrate 110 corresponding to the non-display area 330, or the measurement mark 210 may be disposed on the glass substrate 110 corresponding to the display area 320 and the non-display area 330.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a third embodiment of a display panel provided in the present application. As shown in FIG. 5, in one embodiment, the display area 320 includes a plurality of display pixels 340, and the measurement marks 210 are disposed on the glass substrate 110 corresponding to the display area 320, and the measurement marks 210 are disposed between the display pixels 340.
Specifically, the display area 320 is an array of a plurality of display pixels 340, and the display pixels 340 are typically composed of red, green, blue, and other sub-pixels. When the measurement mark 210 is disposed on the glass substrate 110 corresponding to the display area 320, the measurement mark 210 is disposed between the display pixels 340 to ensure the display effect of the display panel.
In other embodiments, the measurement mark 210 may also be disposed on the glass substrate 110 corresponding to the non-display area 330 and the display area 320, and disposed between the display pixels 340, so as to ensure the display effect of the display panel.
In one embodiment, the shape of the projection of the measurement mark 210 on the glass substrate 110 is polygonal and/or circular.
Specifically, the measurement mark 210 is disposed on the glass substrate 110, and a projection shape of the measurement mark 210 on the glass substrate 110 is polygonal and/or circular, or a cross-sectional shape of the measurement mark 210 on the glass substrate 110 is polygonal and/or circular.
In one embodiment, the measurement identifier 210 is at least one of a pyramid, a cone, a pyramid, and a truncated cone.
Specifically, the measurement mark 210 is at least one of a pyramid, a cone, a pyramid, and a truncated cone, such that the measurement mark 210 is projected on the glass substrate 110 in a polygonal and/or circular shape, and has a feature that the cross-sectional area decreases with increasing distance between the cross-section and the glass substrate 110.
Referring to fig. 6, fig. 6 is a schematic structural diagram of an embodiment of a measurement identifier provided in the present application. As shown in fig. 6, in an embodiment, the display panel includes a first substrate 120 and a second substrate 130 disposed opposite to each other, a measurement mark 210 is disposed between the first substrate 120 and the second substrate 130, and the measurement mark 210 is used for supporting the first substrate 120 and the second substrate 130.
The display panel includes a first substrate 120 and a second substrate 130 disposed opposite to each other, a measurement mark 210 disposed between the first substrate 120 and the second substrate 130, at least one of the first substrate 120 and the second substrate 130 is a glass substrate 110, or the measurement mark 210 is disposed on the first substrate 120 and/or the second substrate 130. Specifically, in one embodiment, when the display panel is a liquid crystal display panel, the display panel is formed by bonding two glass substrates 110, and liquid crystal is poured between the two glass substrates 110, and a pixel electrode layer and a common electrode layer are respectively disposed on opposite inner sides of the two glass substrates 110, and the rotation direction of liquid crystal molecules is controlled by using voltage field intensity to generate a picture. At this time, the glass substrates 110 are the first substrate 120 and the second substrate 130, and the liquid crystal film layer 310 is disposed between the two glass substrates 110.
In another embodiment, when the display panel is a liquid crystal on silicon display panel, the glass substrate 110 is one of the first substrate 120 and the second substrate 130, and the other of the first substrate 120 and the second substrate 130 is a material substrate such as a wafer. The measurement mark 210 is disposed on the glass substrate 110, and at this time, the liquid crystal film layer 310 is disposed between the glass substrate 110 and the wafer substrate, and the height of the measurement mark 210 needs to be close to the box height of the display panel, so as to be used for supporting the first substrate 120 and the second substrate 130.
In one embodiment, the measurement mark 210 is in the shape of a quadrangular frustum and/or a quadrangular pyramid, and the projected area of the measurement mark 210 on the glass substrate 110 is at least 25um 2 The height of the measurement mark 210 is at least 1um.
Specifically, when the measurement mark 210 is in a quadrangular frustum shape and/or a quadrangular pyramid shape, the length of the measurement mark 210 on the glass substrate 110 is greater than or equal to 5um, the width of the measurement mark on the glass substrate 110 is greater than or equal to 5um, and the projected area on the glass substrate 110 is greater than or equal to 25um 2 The height is greater than or equal to 1um to ensure that the measurement indicia 210 can be used to make thickness measurements.
The application also provides a film thickness measuring method of the display panel, which can be applied to a test structure for measuring the thickness of the film layers such as liquid crystal and the like during manufacturing and production of the display panel, so that the accuracy and uniformity of the film thickness are ensured, and the method is simple and can improve the production efficiency.
Referring to fig. 7, fig. 7 is a flowchart illustrating an embodiment of a method for measuring a thickness of a film according to the present application. As shown in fig. 7, in the present embodiment, the method for measuring the thickness of the film layer of the display panel includes the following steps:
step S11: a glass substrate 110 is provided, and a measurement mark 210 is provided on the glass substrate 110, wherein the cross-sectional area of the measurement mark 210 decreases with increasing distance between the cross-section and the glass substrate 110.
The glass substrate 110 is provided with a measurement mark 210, and the cross-sectional area of the measurement mark 210 decreases with the distance between the cross-section and the glass substrate 110, i.e. the measurement mark 210 has a first inclined plane and a second inclined plane, and the angle openings of the first inclined plane and the second inclined plane face to one side of the glass substrate 110 near the measurement mark 210.
Step S12: a film layer 310 is provided on the glass substrate 110.
The film layer 310 is disposed on the glass substrate 110, and specifically, the film layer 310 may be disposed by pouring, coating, or the like, and the film layer 310 includes, but is not limited to, a liquid crystal film layer 310.
Step S13: dimensional data of the measurement identifier 210 exposed to the film 310 is obtained.
The dimension data of the measurement mark 210 exposed on the film layer 310 is obtained, or the projection dimension data of the measurement mark 210 on the film layer 310 is obtained, wherein the dimension data includes, but is not limited to, parameters such as length, width, radius, diameter, area, side length, etc.
Step S14: thickness data for film layer 310 is calculated based on the dimensional data.
The thickness data of the film 310 is calculated based on the size data of the first surface of the film 310 or based on a proportional relationship of the size data to the thickness of the film 310.
Since the thickness of the film 310 is directly calculated by measuring the cross-sectional dimension of the mark 210 and the relationship between the cross-sectional dimension and the height, the measuring time is short and is not affected by the quality (compactness) of the film 310.
In the embodiment of the application, by setting the measurement identifier 210 on the glass substrate 110, the thickness of the film 310 can be measured rapidly and accurately without being affected by the compactness of the film 310, so that the accuracy and uniformity of the thickness of the film 310 are ensured, and the production efficiency is improved.
Referring to fig. 8-9, fig. 8 is a flow chart of another embodiment of the method for measuring a thickness of a film according to the present application, and fig. 9 is a schematic structural diagram of an embodiment of the test structure according to the present application. As shown in fig. 8 to 9, in this embodiment, step S11 further includes the steps of:
step S21: an insulating layer 410 is provided on the glass substrate 110.
Specifically, an insulating layer 410 with a preset thickness may be disposed on the glass substrate 110 by a coating method, where the insulating layer 410 is a solid layer made of an insulating material, and the material of the insulating layer 410 at least includes a photoresist.
Step S22: a mask 420 having an opening formed in a predetermined shape is placed on the insulating layer 410.
The mask plate is a part which needs to be used in the technological processes of exposure, development, etching and the like, and the mask plate 420 is a metal part with a plurality of holes, so that the mask plate can be accurately positioned when the base material is manufactured. Specifically, the predetermined shape opening on the mask plate 420 corresponds to the shape of the measurement mark 210 projected on the glass substrate 110, i.e., the predetermined shape opening includes, but is not limited to, a circle, a polygon, etc.
Step S23: the insulating layer 410 is subjected to an exposure process.
The insulating layer 410 is exposed by laser, and the laser passes through the mask 420 and then acts on the insulating layer 410, and since the mask 420 has openings with preset shapes, the region of the insulating layer 410 corresponding to the openings with preset shapes cannot receive ultraviolet rays, i.e., the mask 420 acts to selectively irradiate or selectively expose the insulating layer 410. According to the opening shape of the mask, the insulating layer 410 may be exposed on a plurality of sections, for example, as shown in fig. 9, when the measurement mark 210 is a quadrangular table, the insulating layer 410 may be exposed on A-A 'section and B-B' section.
Wherein fig. 9- (a) is a schematic structural diagram obtained by selecting A-A 'section on a front view of the measuring mark 210, and fig. 9- (B) is a schematic structural diagram obtained by selecting B-B' section on a side view of the measuring mark 210, and the quadrangular prism has a first edge and a second edge which intersect, the A-A 'section is parallel to the first edge, and the B-B' section is parallel to the second edge.
Step S24: the exposed insulating layer 410 is developed to obtain a measurement mark 210, where the shape of the measurement mark 210 corresponds to the shape of the preset opening.
After exposure treatment, the insulating layer 410 may be subjected to development treatment by applying a developing solution, and since the insulating layer 410 material includes a photoresist, the exposed insulating layer 410 area is dissolved by the developing solution, so as to obtain the measurement mark 210 having a preset shape, where the shape of the measurement mark 210 corresponds to the preset opening shape.
In this embodiment, by disposing the insulating layer 410 on the glass substrate 110 and disposing the mask 420 on the insulating layer 410, the measurement mark 210 with a preset shape can be formed on the glass substrate 110 after the insulating layer 410 is exposed and developed, so as to achieve accurate positioning.
Referring to fig. 10, fig. 10 is a flowchart illustrating a film thickness measurement method according to another embodiment of the present application. As shown in fig. 10, in the present embodiment, before step S12, the film thickness measurement method may further include the following steps:
step S31: the dimensional parameters of the metrology mark 210 are obtained.
The dimension parameter of the measurement mark 210 is the projected dimension of the measurement mark 210 on the glass substrate 110, and the dimension parameter includes, but is not limited to, one or more parameters including length, width, radius, diameter, area, side length, height, etc. The dimension data of the measurement mark 210 is the dimension of the measurement mark 210 exposed on the film 310, or the dimension data is the dimension of the measurement mark 210 on the first surface of the film 310.
Step S32: and establishing a measurement model based on the dimension parameters, wherein the measurement model comprises the relative relation between the dimension parameters and the thickness data.
Based on the size parameter of the measurement identifier 210, a related measurement model may be established, in which a relative relationship between the size parameter and the thickness data of the film 310 may be defined, so that when the thickness of the film 310 is measured, a corresponding measurement model may be directly called according to the size of the measurement identifier 210, and the thickness of the film 310 corresponding to the measurement model may be calculated according to the size data of the measurement identifier 210, the relative relationship between the size parameter and the thickness data of the film 310.
It can be appreciated that in another embodiment, the test structure may be provided with a plurality of measurement marks 210 with sizes and shapes, and store corresponding measurement models, and when the thickness of the film layer 310 is measured, the corresponding measurement models can be directly invoked by identifying the mark information on the measurement marks 210, so as to speed up the measurement.
Referring to fig. 11, fig. 11 is a schematic structural diagram of another embodiment of a test structure provided in the present application. As shown in fig. 11, the present application further proposes a test structure for performing thickness measurement on the film 310 of the display panel by the film thickness measurement method as described in any one of the above.
The test structure comprises a carrier 510 and a test probe 520, the carrier 510 is used for carrying the glass substrate 110, the glass substrate 110 is provided with the measurement mark 210, and the measurement mark 210 can be manufactured by the exposure and development method. The test probe 520 is disposed on the stage 510, and is used for obtaining the projection size of the measurement mark 210 on the glass substrate 110 or the film 310, and calculating the thickness of the film 310 according to the size data of the measurement mark 210.
In an alternative embodiment, test probe 520 includes, but is not limited to, a video camera, an industrial camera, etc., and test probe 520 may be movable for capturing and testing a plurality of measurement tags 210 on a display panel.
Compared with the prior art, the film thickness measuring method can directly calculate the thickness of the film 310 through the relation between the section size and the section size of the measuring mark 210 and the height, has short measuring time, is not influenced by the compactness of the film 310, ensures the accuracy and uniformity of the thickness of the film 310, and improves the production efficiency.
The foregoing description is only of embodiments of the present application, and is not intended to limit the scope of the patent application, and all equivalent structures or equivalent processes using the descriptions and the contents of the present application or other related technical fields are included in the scope of the patent application.
Claims (10)
1. A display panel, comprising:
a glass substrate;
the film layer is arranged on the glass substrate;
the measuring mark is arranged on the glass substrate, the cross section area of the measuring mark is reduced along with the increase of the distance between the cross section and the glass substrate, and the measuring mark is used for measuring the thickness of the film layer according to the size data of the measuring mark exposed on the film layer;
the glass substrate comprises a first substrate and a second substrate which are oppositely arranged, and the measuring mark is positioned between the first substrate and the second substrate and is used for supporting the first substrate and the second substrate.
2. The display panel of claim 1, wherein the display panel comprises a display region and a non-display region, and the measurement mark is disposed on the glass substrate corresponding to the non-display region and/or the display region.
3. The display panel of claim 2, wherein the display area includes a plurality of display pixels, the measurement indicia is disposed on the glass substrate corresponding to the display area, and the measurement indicia is located between the display pixels.
4. The display panel according to claim 1, wherein the shape of the projection of the measurement mark on the glass substrate is polygonal and/or circular.
5. The display panel of any one of claims 1 or 4, wherein the measurement indicia is at least one of a pyramid, a cone, a pyramid, and a truncated cone.
6. The display panel of claim 5, wherein the measurement marks are in the shape of a quadrangular frustum and/or a quadrangular pyramid, and the projected area of the measurement marks on the glass substrate is at least 25um 2 The height of the measurement mark is at least 1um.
7. The film thickness measuring method of the display panel is characterized by comprising the following steps of:
providing a glass substrate, wherein a measuring mark is arranged on the glass substrate, and the cross section area of the measuring mark is reduced along with the increase of the distance between the cross section and the glass substrate;
a film layer is arranged on the glass substrate;
acquiring size data of the measurement mark exposed on the film layer;
thickness data of the film layer is calculated based on the dimensional data.
8. The method of claim 7, wherein the step of providing a measurement mark on the glass substrate comprises:
providing an insulating layer on the glass substrate;
placing a mask plate with a hole with a preset shape on the insulating layer;
exposing the insulating layer;
developing the insulating layer after exposure treatment to obtain the measuring mark, wherein the shape of the measuring mark corresponds to the opening of the preset shape.
9. The method of claim 8, wherein prior to the step of disposing a film on the glass substrate, the method further comprises:
acquiring the size parameter of the measurement mark;
and establishing a measurement model based on the dimension parameter, wherein the measurement model comprises a relative relation between the dimension parameter and the thickness data.
10. A test structure for measuring the thickness of a film layer of a display panel by the film layer thickness measuring method according to any one of claims 7 to 9.
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| CN202211342816.3A CN115763430B (en) | 2022-10-28 | 2022-10-28 | Display panel and film thickness measuring method and structure thereof |
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| CN202211342816.3A CN115763430B (en) | 2022-10-28 | 2022-10-28 | Display panel and film thickness measuring method and structure thereof |
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Citations (6)
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| JP2019009173A (en) * | 2017-06-21 | 2019-01-17 | クアーズテック株式会社 | Method of identifying unevenness of compound semiconductor substrate, and surface inspection apparatus for compound semiconductor substrate used for the same |
| CN114447062A (en) * | 2020-11-06 | 2022-05-06 | 三星显示有限公司 | Display device and method of manufacturing the same |
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| US10179952B2 (en) * | 2013-03-08 | 2019-01-15 | Rutgers, The State University Of New Jersey | Patterned thin films by thermally induced mass displacement |
| JP6145342B2 (en) * | 2013-07-12 | 2017-06-07 | 株式会社荏原製作所 | Film thickness measuring apparatus, film thickness measuring method, and polishing apparatus equipped with film thickness measuring apparatus |
| CN109541826B (en) * | 2018-10-08 | 2021-04-02 | 惠科股份有限公司 | Manufacturing method of lookup table and manufacturing method of display panel |
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| US5953634A (en) * | 1995-02-13 | 1999-09-14 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| FR2891904A1 (en) * | 2005-10-06 | 2007-04-13 | Horiba Jobin Yvon Sas Soc Par | Silicon nitride surface layer thickness measuring method for sample, involves measuring phase difference between two light beams traversing layer and reflecting on substrates, and utilizing processing unit for finding layer thickness |
| JP2017015630A (en) * | 2015-07-04 | 2017-01-19 | 中村 貞美 | Support device for measuring instrument |
| JP2019009173A (en) * | 2017-06-21 | 2019-01-17 | クアーズテック株式会社 | Method of identifying unevenness of compound semiconductor substrate, and surface inspection apparatus for compound semiconductor substrate used for the same |
| CN114447062A (en) * | 2020-11-06 | 2022-05-06 | 三星显示有限公司 | Display device and method of manufacturing the same |
| WO2022191969A1 (en) * | 2021-03-11 | 2022-09-15 | Applied Materials Isreal Ltd. | Optical metrology models for in-line film thickness measurements |
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| CN115763430A (en) | 2023-03-07 |
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