CN109270801A - A kind of exposure method - Google Patents
A kind of exposure method Download PDFInfo
- Publication number
- CN109270801A CN109270801A CN201811147172.6A CN201811147172A CN109270801A CN 109270801 A CN109270801 A CN 109270801A CN 201811147172 A CN201811147172 A CN 201811147172A CN 109270801 A CN109270801 A CN 109270801A
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- China
- Prior art keywords
- label
- chip
- mask plate
- line
- projection
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Abstract
The invention discloses a kind of exposure methods, belong to technical field of semiconductors.It include: that a chip is provided, chip is equipped with the first label, the second label and photoresist to be exposed；Chip is placed on chuck, filled with the liquid for adjusting temperature in chuck；Mask plate and chip are oppositely arranged, projection and first label of the region corresponding with the first label on chip are overlapped on mask plate；When projection of the region corresponding with the second label on mask plate on chip is located between the first label and the second label, the temperature for the liquid filled in chuck is reduced；When region corresponding with the second label is between the projection on chip on the first label and mask plate for the second label, the temperature for the liquid filled in chuck is increased；When projection of the region corresponding with the second label on mask plate on chip and the second label are overlapped, photoresist is exposed through mask plate.The present invention can improve the dislocation of figure.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of exposure method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is that one kind converts electrical energy into luminous energy
Semiconductor electronic component.LED occurred in 1962, can only issue the feux rouges of low luminosity in early days, and it is other to develop sending later
Monochromatic LED.Since the 1990s, gallium nitride (GaN) base LED was succeeded in developing by Japanese Scientists, the technique of LED
Technology is constantly progressive, and the light emission luminance of LED is continuously improved, and the application field of LED is also increasingly wider.LED has low-voltage, low function
Consumption, small in size, light-weight, the service life is long, high reliability, is being widely used in traffic lights rapidly, in automobile
The fields such as outer lamp, landscape light in city, cell phone back light source, outdoor full color display screen.Especially in lighting area, LED has been obtained
Great application, has played unique irreplaceable role.
Chip is the core component of LED.The production method of existing LED chip includes: successively to grow N-type half on substrate
Conductor layer, active layer and p type semiconductor layer；The groove for extending to n type semiconductor layer is opened up on p type semiconductor layer；In p-type half
Current barrier layer is formed in conductor layer, current barrier layer includes ring structure；P-type half outside current barrier layer and ring structure
Transparency conducting layer is formed in conductor layer；P-type electrode is formed on p type semiconductor layer in transparency conducting layer and ring structure, and
N-type electrode is formed on n type semiconductor layer in groove；Region, Yi Jitou in groove in addition to N-type electrode region
Passivation protection layer is formed on region on bright conductive layer in addition to P-type electrode region.
Wherein, groove, current barrier layer, transparency conducting layer, electrode (including P-type electrode and N-type electrode) and passivation protection
The photoresist that the formation of layer is required to be formed certain figure using photoetching process is obtained with performing etching according to the figure of photoresist
To the groove of specific region, current barrier layer, transparency conducting layer, electrode or passivation protection layer.And the figure formed below
Need the pattern alignment formed with front: the figure for forming current barrier layer, which is located at, to be formed in the figure of groove, and transparent lead is formed
The figure of electric layer, which is located at, to be formed outside the figure of current barrier layer, and the figure for forming P-type electrode, which is located at, forms set of currents barrier layer
In figure, the figure for forming N-type electrode, which is located at, to be formed outside the figure of groove, and the figure for forming passivation protection layer, which is located at, forms electrode
Figure outside.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The figure of photoetching process is to be exposed light source and to the photoresist after exposure to photoresist through mask plate
Developed.The pattern of mask plate is graphic designs according to chip at normal temperature in advance.But chip is depositing
Temperature can change during current barrier layer, transparency conducting layer, electrode and passivation protection layer, and the variation of temperature leads to chip
Figure deformation.The pattern of mask plate and the figure of chip mismatch, and the figure needs formed below are deposited with the figure that front is formed
It is misplacing.Groove, current barrier layer, transparency conducting layer, electrode or the passivation protection layer role effect of formation are paid no attention to
Think, the luminous efficiency of LED is lower, or even is also possible to cause LED the integrity problems such as to occur leaking electricity, and influences the service life of LED.
Summary of the invention
The embodiment of the invention provides a kind of exposure methods, are able to solve the figure that prior art lithographic technique is formed below
It needs to there are problems that dislocation with the figure that front is formed.The technical solution is as follows:
The embodiment of the invention provides a kind of exposure method, the exposure method includes:
A chip is provided, the chip is equipped with the first label, the second label and photoresist to be exposed；
The chip is placed on chuck, filled with the liquid for adjusting temperature in the chuck；
Mask plate and the chip are oppositely arranged, region corresponding with first label is described on the mask plate
The line of the projection of region corresponding with second label on the chip in projection and the mask plate on chip, with
The line of first label and second label is located on the same line, and is marked on the mask plate with described first
The projection and the first label coincidence of corresponding region on the chip；
When the projection of region corresponding with second label on the mask plate on the chip is located at described first
When between label and second label, the temperature for the liquid filled in the chuck is reduced；
When second label is located at region corresponding with second label on first label and the mask plate
When between projection on the chip, the temperature for the liquid filled in the chuck is increased；
When region corresponding with second label on the mask plate, projection and described second on the chip is marked
When note is overlapped, the photoresist is exposed through the mask plate.
Optionally, the line of first label and second label is located on the middle line of the chip, and described the
One label and second label are equal with the distance between the center of the chip.
Optionally, the mask plate is arranged in isoperibol.
Optionally, the material of the mask plate uses vitreous silica.
Optionally, third label and the 4th label, the third label and the 4th label are additionally provided on the chip
Line be parallel to it is described first label and it is described second label line；
It is described that the photoresist is exposed through the mask plate, comprising:
Determine displacement of the chip relative to the mask plate, make third label on the mask plate with it is described
Third marks on the distance between the projection of corresponding region on the chip and the 4th label and the mask plate
The sum of the distance between the projection of region corresponding with the 4th label on the chip reaches minimum；
Using the linear light for the line for being parallel to first label and second label through the mask plate to institute
It states photoresist to be exposed, the mask plate is in exposure process along the company perpendicular to first label and second label
The rectilinear direction of line is mobile, and the chip is mobile relative to the mask plate in exposure process, and the chip is relative to described
The displacement of mask plate reaches determining displacement when the linear light is mapped to the third label and the described 4th label.
Optionally, it is tagged to from first label and described second is mapped in the linear light and is mapped to third label
During the 4th label, the chip linearly increases to determining displacement from 0 relative to the displacement of the mask plate.
Optionally, the edge for being tagged to the chip with the described 4th is marked from the third is mapped in the linear light
In the process, the displacement that the chip is equivalent to the mask plate remains determining shift invariant.
Optionally, the quantity of third label and the 4th label is two, two thirds labels and described
The line of 4th label is located at the two sides of the line of first label and second label.
Optionally, the chip is driven by stepper motor relative to the displacement of the mask plate and is realized.
Optionally, the stepper motor drives the chip mobile relative to the mask plate by lever.
Technical solution provided in an embodiment of the present invention has the benefit that
By according on chip first label and second label on mask plate with first mark and the second label it is corresponding
Projection of the region on chip relative position, determine the size relation of figure on chip and mask plate, and then according to determination
Size relation, the corresponding temperature for adjusting chip makes the in the same size of figure on chip and mask plate using the variation of temperature, can
To adjust the dislocation of chip and mask plate patterns entirety, the figure formed below is effectively improved between figure that front is formed
Dislocation saves the device area under equal light area, reduces costs and improve the reliability of LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of flow chart of exposure method provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the chip provided in an embodiment of the present invention for being equipped with the first label and the second label；
Fig. 3 is the structural schematic diagram of the chip provided in an embodiment of the present invention equipped with third label and the 4th label；
Fig. 4 is the structural schematic diagram of exposure sources provided in an embodiment of the present invention；
Fig. 5 is schematic diagram of the chip provided in an embodiment of the present invention with respect to mask plate change in displacement situation.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of exposure methods.Fig. 1 is a kind of exposure method provided in an embodiment of the present invention
Flow chart.Referring to Fig. 1, which includes:
Step 101: providing a chip, chip is equipped with the first label, the second label and photoresist to be exposed.
Optionally, the line of the first label and the second label can be located on the middle line of chip, and the first label and second
Mark the distance between center of chip can be equal, to utilize the first label and the second label can by chip and mask plate
It is substantially aligned with.
Fig. 2 is the structural schematic diagram of the chip provided in an embodiment of the present invention for being equipped with the first label and the second label.Wherein,
10 indicate chip, and 11 indicate the first label, and 12 indicate the second label.Referring to fig. 2, the line of the first label 11 and the second label 12
On the middle line parallel with bottom edge positioned at chip 10, and the first label 11 and the second label 12 are relative to chip 10 and base vertical
Middle line is symmetrical, i.e. the first label 11 and the second label 12 are equal with the distance between the center of chip 10.
Optionally, third label and the 4th label are also provided on chip, third label and the line of the 4th label are flat
Row is in the line of the first label and the second label.
Fig. 3 is the structural schematic diagram of the chip provided in an embodiment of the present invention equipped with third label and the 4th label.Wherein,
10 indicate chip, and 13 indicate third label, and 14 indicate the 4th label.Referring to Fig. 3, the line of third label 13 and the 4th label 14
It is parallel to the middle line parallel with bottom edge of chip 10, and is located at the middle line side far from bottom edge parallel with bottom edge of chip 10, third
Label 13 and the 4th label 14 are symmetrical relative to chip 10 and the middle line of base vertical, i.e., third label 13 and the 4th label 14 with
The distance between the center of chip 10 is equal.
Step 102: chip being placed on chuck, filled with the liquid for adjusting temperature in chuck.
Preferably, the liquid for adjusting temperature can be water.The specific heat capacity of water is high, and economic and environment-friendly, is particularly suitable for carrying out
Temperature is adjusted.
Step 103: mask plate and chip being oppositely arranged, region corresponding with the first label is on chip on mask plate
The line of projection of the region corresponding with the second label on chip in projection and mask plate is marked with the first label and second
Line is located on the same line, and projection and first label weight of the region corresponding with the first label on chip on mask plate
It closes.
Optionally, mask plate can be set in isoperibol, avoid the dimension of picture of mask plate in product processing
The fixation of dimension of picture is realized in middle fluctuation.
In practical applications, mask plate can be placed in some device filled with the air for adjusting temperature,.Pass through tune
Air themperature in regulating device remains unchanged the temperature of mask plate, and such as 23 DEG C.
Optionally, the material of mask plate can use vitreous silica.The thermal expansion coefficient of vitreous silica is small, can be to avoid covering
Film version changes the size of mask plate in exposure process due to temperature change, while vitreous silica is to the light transmittance of ultraviolet light
Height, suitable for exposing ultraviolet light used.
Step 104: when projection of the region corresponding with the second label on mask plate on chip is located at the first label and the
When between two labels, the temperature for the liquid filled in chuck is reduced.
Step 105: when second label be located at first label and mask plate on region corresponding with the second label on chip
Projection between when, increase chuck in fill liquid temperature.
Step 106: when projection of the region corresponding with the second label on mask plate on chip and the second label are overlapped,
Photoresist is exposed through mask plate.
The embodiment of the present invention by according on chip first label and second label with mask plate on first mark and
The relative position of projection of the corresponding region of second label on chip, determines the size relation of figure on chip and mask plate,
And then according to determining size relation, the corresponding temperature for adjusting chip makes figure on chip and mask plate using the variation of temperature
In the same size, the dislocation of adjustable chip and mask plate patterns entirety, be effectively improved the figure that is formed below and front shape
At figure between dislocation, improve the reliability of LED.
In practical applications, the ultraviolet light being exposed, high-pressure pump steam ionization in pumping lamp can be generated using pumping lamp
The spectrum of sending includes several peak points between 200nm~400nm.It is possible to further coat europium on the inner wall of pumping lamp
Yttrium Orthovanadate (YVO4:Eu) fluorescent powder of activation, to improve light efficiency.
Preferably, it can be irradiated on chip through imaging system through the light of mask plate, to reach preferable exposure
Effect.
Fig. 4 is the structural schematic diagram of exposure sources provided in an embodiment of the present invention.Wherein, 10 chip is indicated, 20 indicate card
Disk, 30 indicate mask plate, and 40 indicate pumping lamp, 50 imaging systems.Referring to fig. 4, mask plate 30, imaging system 50, chip 10 and card
Disk 20 is successively set in the optical path of pumping lamp 40.
When being additionally provided with third label and the 4th label on chip, which may include:
It determines displacement of the chip relative to mask plate, region corresponding with third label on third label and mask plate is made to exist
Throwing of the region corresponding with the 4th label on chip in the distance between projection on chip and the 4th label and mask plate
The sum of the distance between shadow reaches minimum；
Photoresist is exposed through mask plate using the linear light for the line for being parallel to the first label and the second label,
Mask plate moves in exposure process along the rectilinear direction perpendicular to the first label and the line of the second label, and chip is exposed
Mobile relative to mask plate in journey, chip is reached relative to the displacement of mask plate when linear light emission is marked to third label and the 4th
To determining displacement.
The embodiment of the present invention is exposed respectively by the way that chip is divided into multiple regions, and is adjusted during exposure
The relative position of chip and mask plate, the figure for exposing chip and mask plate matches the most in exposure, adjustable
The dislocation of chip and mask plate patterns part, the mistake for further improving the figure formed below between figure that front is formed
Position, improves the reliability of LED.
Preferably, the process for being mapped to third label and marking with the 4th is tagged to from the first label and second is mapped in linear light
In, chip can linearly increase to determining displacement from 0 relative to the displacement of mask plate.
Preferably, linear light from be mapped to third label and the 4th be tagged to the edge of chip during, chip is suitable
Determining shift invariant can be remained in the displacement of mask plate.
Fig. 5 is schematic diagram of the chip provided in an embodiment of the present invention with respect to mask plate change in displacement situation.Referring to Fig. 5,
During edge of the exposure area from the center of chip to chip is mobile, chip is first since 0 relative to the displacement of mask plate
It linearly increases to determining displacement and then keeps determining shift invariant.
Optionally, the displacement changing curve between chip and mask plate may be set to be other way, such as in linear light
From be mapped to the first label and second be tagged to be mapped to third label and the 4th label during, position of the chip relative to mask plate
Shifting be stepped up from 0 to determining displacement, linear light from be mapped to third label and the 4th be tagged to chip edge process
In, the displacement that chip is equivalent to mask plate is increased by same rate etc., it is only necessary to corresponding variation is set in computer controlling
Curve, it is various to alignment request to meet.
Preferably, the quantity of third label and the 4th label can be two, the company of two third labels and the 4th label
Line is located at the two sides of the line of the first label and the second label.It is further in the chip middle line two sides difference parallel with bottom edge
An alignment situation is adjusted, in the case where improving aligning accuracy, adjustment number is reduced as far as possible, facilitates realization.
Specifically, chip can be driven by stepper motor relative to the displacement of mask plate and be realized.
More specifically, the resolution ratio of stepper motor can be 0.05 μm, it is sufficient to meet exposure at present to 1 μm of essence of alignment request
Degree.
Further, stepper motor can be mobile relative to mask plate by lever driving chip, to increase adjustment of displacement
Precision.For example the resolution ratio of stepper motor can be 0.05 μm, the ratio of lever is 5:1, then the precision of adjustment of displacement can be with
0.01 μm is increased to from 0.05 μm.
By carrying out follow-up observation to using chip appearance of the invention, the result is that the alignment essence of entire disk each region
Degree meets pre-provisioning request, counts by the parameters to flowing water, the yield of the present embodiment chip can be improved
2.0% or so, other parameters are almost the same, and LED chip layout design overall size can guarantee that luminous effective area is constant
In the case of reduce 3.0% or so.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of exposure method, which is characterized in that the exposure method includes:
A chip is provided, the chip is equipped with the first label, the second label and photoresist to be exposed；
The chip is placed on chuck, filled with the liquid for adjusting temperature in the chuck；
Mask plate and the chip are oppositely arranged, region corresponding with first label is in the chip on the mask plate
On projection and the mask plate on the projection of region corresponding with second label on the chip line, and it is described
The line of first label and second label is located on the same line, and corresponding with first label on the mask plate
Region projection on the chip and first label be overlapped；
When the projection of region corresponding with second label on the mask plate on the chip is located at first label
When between second label, the temperature for the liquid filled in the chuck is reduced；
When it is described second label be located at it is described first label and the mask plate on region corresponding with second label in institute
When stating between the projection on chip, the temperature for the liquid filled in the chuck is increased；
When region corresponding with second label on the mask plate, projection and described second on the chip marks weight
When conjunction, the photoresist is exposed through the mask plate.
2. exposure method according to claim 1, which is characterized in that the line of first label and second label
On the middle line of the chip, and first label and the distance between second label and the center of the chip phase
Deng.
3. exposure method according to claim 1 or 2, which is characterized in that the mask plate is arranged in isoperibol.
4. exposure method according to claim 1 or 2, which is characterized in that the material of the mask plate uses vitreous silica.
5. exposure method according to claim 1 or 2, which is characterized in that be additionally provided with third label and the on the chip
The line of four labels, the third label and the 4th label is parallel to the company of first label and second label
Line；
It is described that the photoresist is exposed through the mask plate, comprising:
Determine displacement of the chip relative to the mask plate, make third label on the mask plate with the third
Mark the distance between the projection of corresponding region on the chip and it is described 4th label with the mask plate on institute
It states the sum of the distance between the projection of the corresponding region of the 4th label on the chip and reaches minimum；
Using the linear light for the line for being parallel to first label and second label through the mask plate to the light
Photoresist is exposed, and the mask plate is in exposure process along perpendicular to the line of first label and second label
Rectilinear direction is mobile, and the chip is mobile relative to the mask plate in exposure process, and the chip is relative to the exposure mask
The displacement of version reaches determining displacement when the linear light is mapped to the third label and the described 4th label.
6. exposure method according to claim 5, which is characterized in that the linear light from be mapped to it is described first label and
During described second is tagged to and is mapped to third label and the 4th label, the chip is relative to the mask plate
Displacement linearly increase to determining displacement from 0.
7. exposure method according to claim 5, which is characterized in that the linear light from be mapped to third label and
During described 4th is tagged to the edge of the chip, the displacement that the chip is equivalent to the mask plate remains determination
Shift invariant.
8. exposure method according to claim 5, which is characterized in that the quantity of the third label and the 4th label
It is two, the line of two third labels and the 4th label is located at first label and second label
Line two sides.
9. exposure method according to claim 5, which is characterized in that the chip relative to the mask plate displacement by
Stepper motor driving is realized.
10. exposure method according to claim 9, which is characterized in that the stepper motor drives the core by lever
Piece is mobile relative to the mask plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811147172.6A CN109270801B (en) | 2018-09-29 | 2018-09-29 | Exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811147172.6A CN109270801B (en) | 2018-09-29 | 2018-09-29 | Exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109270801A true CN109270801A (en) | 2019-01-25 |
| CN109270801B CN109270801B (en) | 2020-11-27 |
Family
ID=65195748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811147172.6A Active CN109270801B (en) | 2018-09-29 | 2018-09-29 | Exposure method |
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| Country | Link |
|---|---|
| CN (1) | CN109270801B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070002429A1 (en) * | 2005-06-17 | 2007-01-04 | Yokogawa Electric Corporation | Optical channel monitor |
| CN101740432A (en) * | 2008-11-27 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| US9466538B1 (en) * | 2015-11-25 | 2016-10-11 | Globalfoundries Inc. | Method to achieve ultra-high chip-to-chip alignment accuracy for wafer-to-wafer bonding process |
-
2018
- 2018-09-29 CN CN201811147172.6A patent/CN109270801B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070002429A1 (en) * | 2005-06-17 | 2007-01-04 | Yokogawa Electric Corporation | Optical channel monitor |
| CN101740432A (en) * | 2008-11-27 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| US9466538B1 (en) * | 2015-11-25 | 2016-10-11 | Globalfoundries Inc. | Method to achieve ultra-high chip-to-chip alignment accuracy for wafer-to-wafer bonding process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109270801B (en) | 2020-11-27 |
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