CN109256367A - Pre-plastic package lead frame, semiconductor package and its unit, packaging method - Google Patents
Pre-plastic package lead frame, semiconductor package and its unit, packaging method Download PDFInfo
- Publication number
- CN109256367A CN109256367A CN201811244111.1A CN201811244111A CN109256367A CN 109256367 A CN109256367 A CN 109256367A CN 201811244111 A CN201811244111 A CN 201811244111A CN 109256367 A CN109256367 A CN 109256367A
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- Prior art keywords
- conducting element
- lead frame
- plastic package
- insulating layer
- unit
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- 239000004033 plastic Substances 0.000 title claims abstract description 130
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 25
- 238000005520 cutting process Methods 0.000 claims abstract description 26
- 238000004382 potting Methods 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 120
- 239000011241 protective layer Substances 0.000 claims description 18
- 238000003486 chemical etching Methods 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 14
- 238000000926 separation method Methods 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 10
- 238000005538 encapsulation Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000005253 cladding Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- -1 that is Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49586—Insulating layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The present invention provides a kind of pre-plastic package lead frame, semiconductor package and its units, packaging method, the pre-plastic package lead frame includes: multiple leadframes units, leadframes unit at least has conducting element on the outermost side, there are insulating layer, at least partly lateral wall of insulating layer coated with conductive element by pre-plastic package technique potting between the conducting element of adjacent lead frame unit.The embodiment of the present invention can carry out protection against oxidation to conducting element, and the preparation process of pre-plastic package lead frame is simplified and is closely connected, and manufacturing cost is minimized；In addition, improving the quality and yield of encapsulating products the problem of existing metal residual when eliminating prior art cutting.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation more particularly to a kind of pre-plastic package lead frames, semiconductor packages knot
Structure and its unit, packaging method.
Background technique
The description of this part, which is only provided, discloses relevant background information to the present invention, without constituting the prior art.
Pre-plastic package lead frame is a kind of novel base plate for encapsulating semiconductor, and design form is versatile and flexible, compatible
Various encapsulation styles, such as flip chip bonding (Flip Chip, FC), wire bonding weldering (Wire Bonding), three-dimensional stacked encapsulation etc..
It is especially suitable for the more I/O encapsulation of high density, the encapsulation needs of different IC chips can be met, typical structure is several leads
Electric column and line layer are arranged in moulding material independently of one another.According to product needs, conductive column and line layer can be set as one layer, and two
Layer or more.As China Patent Publication No. CN105655303A provides a kind of typical 2 layers of pre-plastic package lead frame (base
Plate).
Figure 1A to Fig. 1 D is the existing packaging technology using pre-plastic package lead frame, and general steps are as follows:
Figure 1A: providing a pre-plastic package lead frame substrate 100, which has first surface
106 and second surface 108, for 102 potting of metallic conduction post in insulating layer 104, metallic conduction post 102 is naked in second surface 108
A coat of metal 112 is formed on the region of dew.110 one between two neighboring pre-plastic package lead frame substrate unit
Virtual center line, the center line of Cutting Road when also being separated as subsequent cutting.
Figure 1B: by taking face-down bonding as an example, by 114 face-down bonding of chip in pre-plastic package lead frame substrate 100, chip
Pin on 114 is connect one by one with the metallic conduction post 102 in pre-plastic package lead frame substrate 100.
Fig. 1 C: molding plastic package process, with insulating materials 116 (epoxide resin polymer) by chip 114 and pre-plastic package lead
The first surface 106 of frame base 100 coats comprehensively.
Fig. 1 D: cutting separating technology is executed along the center line 110 of Cutting Road, becomes several encapsulation units being separated from each other.
It as shown in figure iD, is exposed Copper base material at the outer pin side 118 of chip unit after encapsulation.Since its surface does not have
Matcoveredn, thus easy to oxidize in subsequent use process.When connecting with other electronic components, solderability is also relatively
Low, there are hidden danger of quality.
Notification number provides a kind of lead frame and its unit, semiconductor package and its unit for CN204834611U
Known embodiments, the known embodiments can to after encapsulation chip unit outer pin carry out protection against oxidation.Specifically, should
Groove is arranged by being entreated in the connection strap of pad and external pin in this connection in known embodiments, and is arranged on the wall of the groove
The mode of additional metal layer prevents external pin from aoxidizing.
However, groove needs are obtained by additionally implementing cutting technique to connection strap, the preparation with entire lead frame
Technique is difficult to realize closely be connected, and manufacturing cost is caused to increase.And actually since the size of connection strap is smaller, the processing of groove
Difficulty is larger.
In addition, connection strap and central pad and external pin are material, that is, metal of the same race.In this way, in subsequent cutting separation half
When conductor package structure, the connection strap hardness of metal material is larger, more serious to the abrasion of cutting blade.And cutting metal material
The connection strap of matter can also have metal residual, influence finally obtained encapsulating products quality.
It should be noted that the above description of the technical background be intended merely to it is convenient to technical solution of the present invention carry out it is clear,
Complete explanation, and facilitate the understanding of those skilled in the art and illustrate.Cannot merely because these schemes of the invention
Background technology part is expounded and thinks that above-mentioned technical proposal is known to those skilled in the art.
Summary of the invention
Based on prior art defect above-mentioned, the embodiment of the invention provides a kind of pre-plastic package lead frames, semiconductor package
One of assembling structure and its unit, packaging method, can preferably solve the above problems.
To achieve the goals above, the present invention provides the following technical solutions.
A kind of pre-plastic package lead frame, comprising: multiple leadframes units, the leadframes unit, which at least has, to be located at
Outermost conducting element has insulation by pre-plastic package technique potting between the conducting element of the adjacent leadframes unit
Layer, the insulating layer coat at least partly lateral wall of the conducting element.
Preferably, the thickness of the insulating layer is less than the thickness of the conducting element, the upper surface of the insulating layer and institute
The upper surface for stating conducting element is concordant, and the conducting element, which is located on the lateral wall below the insulating layer, forms matcoveredn.
Preferably, the lower surface of the insulating layer and the conducting element are located between the lateral wall below the insulating layer
Groove is formed, the groove obtains for the conducting element progress chemical etching for being included to the adjacent leadframes unit.
Preferably, the lateral wall for limiting the conducting element of the groove is face of slope structure, and the protective layer is formed
In the face of slope structure.
Preferably, the lower surface of the conducting element is switched to the back side of the leadframes unit, the conducting element
Lower surface formed matcoveredn.
Preferably, the insulating layer connects the adjacent leadframes unit as connector.
Preferably, the lateral wall of the conducting element of the adjacent leadframes unit is recessed inwardly to form card slot, described exhausted
The lower end of edge layer extends outward to form protrusion, and the protrusion is embedded in the card slot.
Preferably, the leadframes unit further includes insulation fill stratum, and, by pre-plastic package technique potting in described
In insulation fill stratum and multiple metallic conduction posts independent of each other；Wherein, the metallic conduction post on the outermost side forms institute
State conducting element.
A kind of semiconductor package, comprising:
Pre-plastic package lead frame as described in any one above-mentioned embodiment；
Semiconductor chip corresponding with multiple leadframes units, the semiconductor chip with it is corresponding described pre-
Conducting element electrical connection in plastic package lead frame；
Plastic packaging layer, coat positive, the described insulating layer of the pre-plastic package lead frame upper surface and the semiconductor
Chip.
A kind of semiconductor packages unit, comprising:
Leadframes unit comprising: the lateral wall of conducting element on the outermost side, the conducting element passes through preformed
Envelope technique is formed with insulating layer, and the insulating layer coats at least partly lateral wall of the conducting element；
Semiconductor chip is electrically connected with the conducting element in the leadframes unit；
Plastic packaging layer, coat positive, the described insulating layer of the leadframes unit upper surface and the semiconductor core
Piece.
A kind of method for packaging semiconductor, comprising:
Pre-plastic package lead frame as described in any one above-mentioned embodiment is provided；
Chemical etching is carried out to the lower surface of the conducting element, keeps the lower surface of the insulating layer exposed, the conduction
The lateral wall of element forms face of slope structure；
Protective layer is formed in the lower surface of the face of slope structure and the conducting element；
By semiconductor chip upside-down mounting to the front of the pre-plastic package lead frame, make the weld pad of the semiconductor core on piece with
The pin of the pre-plastic package lead frame is electrically connected to each other；
The front of the semiconductor chip and the pre-plastic package lead frame is coated comprehensively with insulating materials, forms plastic packaging
Layer, obtains semiconductor package.
Preferably, in the step of pre-plastic package lead frame is provided, the conducting element of the adjacent leadframes unit around
It crosses below the insulating layer and is linked together；
In the step of carrying out chemical etching, the part of the lower section of the insulating layer is located to the conducting element
Etching is learned, so that the conducting element is ablated to around the part of the lower section of the insulating layer, and is made under the insulating layer
Surface exposure.
Preferably, in the step of providing pre-plastic package lead frame, the leadframes unit further includes insulation fill stratum,
And through pre-plastic package technique potting in the insulation fill stratum and multiple metallic conduction posts independent of each other；
Wherein, the metallic conduction post on the outermost side forms the conducting element, the upper table of the metallic conduction post
The front that face is switched to the leadframes unit forms the pin, and the lower surface of the metallic conduction post is switched to described draw
The lower surface at the back side of wire frame unit, all metallic conduction posts is each formed with the protective layer.
Preferably, after the step of forming plastic packaging layer, the method also includes: along the adjacent leadframes unit it
Between Cutting Road cut the insulating layer and the plastic packaging layer so that the semiconductor package separates, obtain semiconductor package
Fill unit.
The pre-plastic package lead frame of the embodiment of the present invention, and utilize semiconductor packages made of the pre-plastic package lead frame
Structure and its unit, by passing through pre-plastic package technique potting insulating layer between the conducting element of adjacent lead frame unit, absolutely
At least partly lateral wall of edge layer coated with conductive element is protected so that insulating layer can be formed the lateral wall of conducting element, and
It is located on the lateral wall below insulating layer in conducting element and forms protective layer, is formed entirely so as to the lateral wall to conducting element
The protection in face avoids the problem that it causes solderability to reduce because oxidation occurs.It is avoided to lead to solderability because oxidation occurs
The problem of reduction.
In addition, pre-plastic package lead frame itself is also made of pre-plastic package technique, therefore insulating layer passes through pre-plastic package
Technique potting can make the forming technology and pre-plastic package lead of insulating layer between the conducting element of adjacent lead frame unit
The preparation process of frame, which is closely connected, to be integrated, so that the preparation process of pre-plastic package lead frame is simplified and closely holds in the mouth
It connects, reduces manufacturing cost.
Also, the hardness by insulating layer of the pre-plastic package technique potting between conducting element is smaller (much smaller than existing skill
The metal material connection strap for being used to connect adjacent lead frame unit in art), knife when can reduce subsequent cutting separation in this way
The loss of piece substantially reduces cutting difficulty and production cost.And it is sealed compared to being realized by the connection strap for cutting metal material
Fill product separation the prior art for, the embodiment of the present invention be not present metal residual the problem of, greatly improve encapsulating products
Quality and yield.
Referring to following description and accompanying drawings, the particular embodiment of the present invention is disclosed in detail, specifies the principle of the present invention
It can be in a manner of adopted.It should be understood that the embodiment of the present invention is not so limited in range.It is wanted in appended right
In the range of the spirit and terms asked, the embodiment of the present invention includes many changes, modifications and is equal.
The feature for describing and/or showing for a kind of embodiment can be in a manner of same or similar one or more
It uses in other embodiments, is combined with the feature in other embodiments, or the feature in substitution other embodiments.
It should be emphasized that term "comprises/comprising" refers to the presence of feature, one integral piece, step or component when using herein, but simultaneously
It is not excluded for the presence or additional of one or more other features, one integral piece, step or component.
Detailed description of the invention
Attached drawing described here is only used for task of explanation, and is not intended to limit model disclosed by the invention in any way
It encloses.In addition, shape and proportional sizes of each component in figure etc. are only schematical, it is used to help the understanding of the present invention, and
It is not the specific shape and proportional sizes for limiting each component of the present invention.Those skilled in the art under the teachings of the present invention, can
Implement the present invention to select various possible shapes and proportional sizes as the case may be.In the accompanying drawings:
Figure 1A to Fig. 1 D is existing packaging technology process and structure chart using pre-plastic package lead frame；Wherein,
Figure 1A is the structural schematic diagram of the pre-plastic package lead frame substrate provided；
Figure 1B is the assembling structure schematic diagram that flip-chip is connected to the two after pre-plastic package lead frame substrate；
Fig. 1 C is the schematic diagram for executing the encapsulating structure obtained after plastic package process；
Fig. 1 D is the structural schematic diagram for executing the encapsulation unit obtained after cutting separating technology；
Fig. 2A to Fig. 2 F is the packaging technology process and structure carried out using the pre-plastic package lead frame of the embodiment of the present invention
Figure；Wherein,
Fig. 2A is the structural schematic diagram of the pre-plastic package lead frame of the embodiment of the present invention provided before etching；
Fig. 2 B is the structural schematic diagram implemented after etch process to the pre-plastic package lead frame in Fig. 2A；
Fig. 2 C is that the side wall of groove in fig. 2b and the lower surface of conducting element form the structural schematic diagram after protective layer；
Fig. 2 D is assembling structure schematic diagram of the semiconductor chip face-down bonding both after the pre-plastic package lead frame of Fig. 2 C；
Fig. 2 E is the schematic diagram for executing the semiconductor package obtained after plastic packaging process；
Fig. 2 F is to execute the semiconductor packages unit obtained after cutting separating technology to the semiconductor package of Fig. 2 E
Structural schematic diagram.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, below in conjunction with of the invention real
The attached drawing in example is applied, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work, all should belong to guarantor of the present invention
The range of shield.
It should be noted that it can directly on the other element when element is referred to as " being set to " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
" right side " and similar statement for illustrative purposes only, are not offered as being unique embodiment.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
Any and all combinations of the listed item of pass.
It is obtained the embodiment of the invention provides a kind of pre-plastic package lead frame 200, using the pre-plastic package lead frame 200
Semiconductor package and its unit, and, the method for carrying out semiconductor packages using the pre-plastic package lead frame 200.
As shown in Fig. 2A to 2C, the pre-plastic package lead frame 200 of the embodiment of the present invention has 201 (upper surface of first surface
Or front) and second surface 202 (lower surface or the back side) comprising multiple leadframes units 203, multiple lead frame list
Member 203 can arrange in the form of rectangular array, 204 one between two neighboring leadframes unit 203 virtually in
Heart line distinguishes each leadframes unit 203 to show, and Cutting Road when separating each leadframes unit 203 as subsequent cutting
Center line.
Leadframes unit 203 at least has conducting element 205 on the outermost side, adjacent lead frame unit 203
There are insulating layer 206, at least portion of 206 coated with conductive element 205 of insulating layer by pre-plastic package technique potting between conducting element 205
Outer side wall.
In the present embodiment, insulating layer 206 can form the lateral wall of conducting element 205 and protect, and avoid it because occurring
The problem of aoxidizing and solderability caused to reduce.
In addition, pre-plastic package lead frame 200 itself is also made of pre-plastic package technique, therefore insulating layer 206 passes through
Pre-plastic package technique potting can make the forming of insulating layer 206 between the conducting element 205 of adjacent lead frame unit 203
Technique is closely connected with the preparation process of pre-plastic package lead frame 200 to be integrated, so that the system of pre-plastic package lead frame 200
Standby technique is simplified and is closely connected, and reduces manufacturing cost.
Also, by cutting insulating layer 206, it can be obtained single leadframes unit 203 and utilize the pre-plastic package
Lead frame 200 encapsulates obtained encapsulating products.Encapsulating products point are realized compared to the connection strap by cutting metal material
From the prior art for, the embodiment of the present invention be not present metal residual the problem of, greatly improve the quality of encapsulating products
And yield.
Pre-plastic package lead frame 200 may include insulation fill stratum 207, and, by pre-plastic package technique potting in insulation
In filled layer 207 and it is isolated from each other or independent multiple metallic conduction posts 208.Wherein, metallic conduction post 208 on the outermost side
It is as mentioned above to need protected conducting element 205.Pre-plastic package technique can refer to notification number as CN105655303A institute
The known embodiments of offer, therefore not to repeat here by the present invention.
Certainly, conducting element 205 can be not limited to the above embodiments.In other feasible embodiments, can also be
Other forms.For example, being provided similar to notification number by CN204834611U when the technical solution of the embodiment of the present invention is used in
When being realized by wire bonding mode in embodiment that semiconductor chip and lead frame are electrically interconnected, conducting element 205 can be with
For the metallic connection strap for connecting adjacent lead frame unit.
In addition, insulating layer 206, which is also used as connector, connects adjacent leadframes unit 203, to draw multiple
Wire frame unit 203 is connected as one, and forms pre-plastic package lead frame 200.
In order to improve insulating layer 206 and as the connection and bond strength between conducting element 205, insulating layer 206 with lead
Close-fitting latching structure is formed between electric device 205.The shape specifically, lateral wall of conducting element 205 can be recessed inwardly
At card slot 205a, the lower end of insulating layer 206 can extend outward to form raised 206a, and the vertical of thus obtained insulating layer 206 cuts
Face shape be substantially in it is inverted "T"-shaped, in raised 206a insertion card slot 205a.And it is filled out to improve conducting element 205 with insulation
The connection and bond strength between layer 207 are filled, the card slot 205a that the lateral wall of conducting element 205 is formed can be circumferentially continuous
, so that the vertical sectional shape of conducting element 205 substantially can be in the shape of an " I ".
As the known embodiments as provided by CN105655303A illustrate, gold can be made using pre-plastic package technique
The end surface shape for belonging to conductive column 208 is various geometric figure.Therefore, pre-plastic package lead frame is made of pre-plastic package technique
200, make it possible the conducting element 205 for obtaining above-mentioned vertical sectional shape and insulating layer 206.
In the present embodiment, at least partly lateral wall of 206 coated with conductive element 205 of insulating layer can be insulating layer 206
Full cladding is formed to the lateral wall of conducting element 205, alternatively, the portion outboard wall of 206 coated with conductive element 205 of insulating layer.Absolutely
Edge layer 206 forms full cladding to the lateral wall of conducting element 205, can by the way that the configuration of the thickness of insulating layer 206 to be equal to or greatly
It is realized in the thickness of conducting element 205.
And the portion outboard wall of 206 coated with conductive element 205 of insulating layer, it can be by the way that the thickness of insulating layer 206 be configured
Thickness less than conducting element 205 equal realize.
Since the thickness of insulating layer 206 is less than the thickness of conducting element 205, then the lateral wall of conducting element 205 exists not
The part being wrapped by.Therefore, protection against oxidation need to be carried out to the lateral wall that conducting element 205 is not coated by insulating layer 206.
Specifically, when the thickness of insulating layer 206 is less than the thickness of conducting element 205, the upper surface of insulating layer 206 and conduction
The upper surface of element 205 is concordant, and the lower surface of insulating layer 206 is higher than the lower surface of conducting element 205, and conducting element 205 is located at
Matcoveredn 209 is formed on the lateral wall of 206 lower section of insulating layer.The protective layer 209 can be the tool formed by electroplating technology
There is the NiPdAu layer of preferable electric conductivity and solderability.In this way, lateral wall a part of conducting element 205 is coated by insulating layer 206,
Another part protected seam 209 coats, and realizes comprehensive protection, increases the solderability and reliability of encapsulating products.
In addition, the back side that the upper surface of conducting element 205 is switched to leadframes unit 203 forms pin 213, conductive element
The lower surface of part 205 is switched to the back side of leadframes unit 203, and the lower surface of conducting element 205 is also formed with protective layer
209.In this way, removing conducting element 205 is switched to the positive pin 213 (i.e. upper surface) of leadframes unit 203 due to needs
It is connected with the weld pad 214 of semiconductor chip 211 without carrying out other than protection against oxidation, all exposures of conducting element 205
It is protected on surface.
Further, the lower surface of insulating layer 206 and conducting element 205 are located between the lateral wall of 206 lower section of insulating layer
Groove 210 is formed, which obtains for the progress chemical etching of conducting element 205 for being included to adjacent lead frame unit 203
It arrives.
As shown in Figure 2 A, in one embodiment, in the pre-plastic package lead frame 200 prepared by pre-plastic package technique, phase
The included conducting element 205 of adjacent leadframes unit 203 can be integrated construction.I.e. as shown in Figure 2 A, adjacent lead frame list
First 203 included conducting elements 205 are linked together around the lower section of insulating layer 206.It at this time can be to around under insulating layer 206
The conducting element 205 of side carries out chemical etching, so that the ablation of conducting element 205 around the lower section of insulating layer 206 be fallen, and makes
The lower surface exposure of insulating layer 206.
Alternatively, in another embodiment, it is adjacent to draw in the pre-plastic package lead frame 200 prepared by pre-plastic package technique
The conducting element 205 that wire frame unit 203 is included is separated from each other or is isolated.I.e. adjacent lead frame unit 203 is included
Conducting element 205 is not linked together around the lower section of insulating layer 206.At this time can side wall directly to conducting element 205 carry out
Chemical etching.
This special technique by chemical etching, so that the lateral wall for limiting the conducting element 205 of groove 210 is in incline
Slope structure, protective layer 209 can be formed in face of slope structure.
Pass through subsequent as with other electronic components in general, being formed in the protective layer 209 of 205 lower surface of conducting element
The main portions being conductively connected are realized in welding, and the protective layer 209 being formed on 205 lateral wall of conducting element being led as what is assisted
Electrical joint.Groove 210 is formed by chemical etching, 205 outside of conducting element for needing to form protective layer 209 can be increased
The area of wall also just increases the area of protective layer 209, to guarantee finally obtained semiconductor packages unit and other electronics
The reliability of component welding and connection.
In addition, forming groove 210 by chemical etching, the conducting element 205 that can eliminate Construction integration is located at insulating layer
The part of 206 lower sections, reduces subsequent thickness to be cut.Also, through pre-plastic package technique potting between conducting element 205
Insulating layer 206 hardness be less than conducting element 205 be metal hardness, the loss of cutting blade can be reduced in this way, significantly
Reduce cutting difficulty and production cost.
The preparation flow of the pre-plastic package lead frame 200 of the embodiment of the present invention is described below, and, implemented using the present invention
The pre-plastic package lead frame 200 of example carries out the method flow of semiconductor packages:
As shown in Figure 2 A, pre-plastic package lead frame 200 is provided.
It is in fall that potting, which has one, between two neighboring leadframes unit 203 included in the pre-plastic package lead frame 200
" T " shaped insulating layer 206 is set, the upper surface of insulating layer 206 is concordant with the upper surface of leadframes unit 203, and overall thickness is small
In the thickness of conducting element 205,205 Construction integration of conducting element of two neighboring leadframes unit 203.
Also, the leadframes unit 203 that the pre-plastic package lead frame 200 is included further include insulation fill stratum 207 with
And through pre-plastic package technique potting in insulation fill stratum 207 and multiple metallic conduction posts 208 independent of each other, it is located at outermost
Metallic conduction post formed or as the conducting element 205 for needing to carry out protection against oxidation.Also, metallic conduction post 208 is upper
The front that surface is switched to leadframes unit 203 forms pin 213, and lower surface is switched to the back side of leadframes unit 203.
As shown in Figure 2 B, chemical etching.
Chemical etching is carried out along the center line 204 of Cutting Road to the lower surface of conducting element 205, is made under insulating layer 206
The lateral wall of surface exposure, conducting element 205 forms face of slope structure, thus the lower surface of insulating layer 206 and conducting element
205 face of slope structure forms groove 210.
As shown in Figure 2 C, protective layer 209 is formed.
In face of slope structure and metallic conduction post 208 (including the metallic conduction post 208 as conducting element 205)
Lower surface forms protective layer 209 by electroplating technology.
As shown in Figure 2 D, the stickup of semiconductor chip 211 and pin interconnection.
By 211 upside-down mounting of semiconductor chip to the front of pre-plastic package lead frame 200, semiconductor chip 211 draws with pre-plastic package
Wire frame 200 bonds, so that the pin 213 on the weld pad 214 and pre-plastic package lead frame 200 on semiconductor chip 211 is mutual
Conductive interconnection is realized in electrical connection.
Using flip chip bonding as embodiment in attached drawing of the present invention, but it is not limited to this, can also include other method of attaching, such as
It can also be the connection of wire bonding mode.
As shown in Figure 2 E, plastic packaging.
With insulating materials (such as epoxide resin polymer) by the of semiconductor chip 211 and pre-plastic package lead frame 200
One surface 201 is that upper surface coats comprehensively, forms plastic packaging layer 212, obtains semiconductor package.
As shown in Figure 2 F, cutting separation.
The center line 204 of Cutting Road between adjacent lead frame unit 203 cuts insulating layer 206 and plastic packaging layer 212,
So that semiconductor package separates, final semiconductor packages unit is obtained.
As shown in Figure 2 E, the embodiment of the invention also provides a kind of semiconductor packages comprising: it is such as above-mentioned any one
Pre-plastic package lead frame 200 described in a embodiment；Semiconductor chip 211 corresponding with multiple leadframes units 203, half
Conductor chip 211 is electrically connected with the conducting element 205 in corresponding pre-plastic package lead frame 200；Plastic packaging layer 212, cladding are pre-
The front of plastic package lead frame 200, the upper surface of insulating layer 206 and semiconductor chip 211.
As shown in Figure 2 F, the embodiment of the invention also provides a kind of semiconductor packages units comprising: leadframes unit
203 comprising: the lateral wall of conducting element 205 on the outermost side, conducting element 205 is formed with absolutely by pre-plastic package technique
Edge layer 206, at least partly lateral wall of 206 coated with conductive element 205 of insulating layer；Semiconductor chip 211, with lead frame list
Conducting element 205 in member 203 is electrically connected；Plastic packaging layer 212 coats the front of leadframes unit 203, insulating layer 206
Upper surface and semiconductor chip 211.
In conclusion the pre-plastic package lead frame 200 of the embodiment of the present invention, being made using the pre-plastic package lead frame 200
Semiconductor package and its unit, and, using the pre-plastic package lead frame 200 carry out semiconductor packages method, lead to
It crosses between the conducting element 205 of adjacent lead frame unit 203 through pre-plastic package technique potting insulating layer 206, insulating layer 206
At least partly lateral wall of coated with conductive element 205 is protected so that insulating layer 206 can be formed the lateral wall of conducting element 205
Shield, and it is located at formation protective layer 209 on the lateral wall below insulating layer 206 in conducting element 205, so as to conducting element
205 lateral wall forms comprehensive protection, avoids the problem that it causes solderability to reduce because oxidation occurs.
In addition, pre-plastic package lead frame 200 itself can also be made of pre-plastic package technique, therefore insulating layer 206 is logical
Pre-plastic package technique potting is crossed between the conducting element 205 of adjacent lead frame unit 203, pre-plastic package lead frame can be made
200 preparation process is simplified and is closely connected, and reduces manufacturing cost.
Also, it (is much smaller than by the way that the hardness of insulating layer 206 of the pre-plastic package technique potting between conducting element 205 is smaller
The metal material connection strap in the prior art for being used to connect adjacent lead frame unit), subsequent cutting point can be reduced in this way
From when blade loss, substantially reduce cutting difficulty and production cost.And compared to by cut metal material connection strap come
Realize encapsulating products separation the prior art for, the embodiment of the present invention be not present metal residual the problem of, greatly improve envelope
Fill the quality and yield of product.
It should be noted that in the description of the present invention, term " first ", " second " etc. are used for description purposes only and distinguish
Similar object between the two and is not present sequencing, can not be interpreted as indication or suggestion relative importance.In addition,
In description of the invention, unless otherwise indicated, the meaning of " plurality " is two or more.
It should be understood that above description is to illustrate rather than to be limited.By reading above-mentioned retouch
It states, many embodiments and many applications except provided example all will be apparent for a person skilled in the art
's.Therefore, the range of this introduction should not be determined referring to foregoing description, but should referring to preceding claims and these
The full scope of the equivalent that claim is possessed determines.For comprehensive purpose, all articles and with reference to including patent
The disclosure of application and bulletin is all by reference to being incorporated herein.Appointing for theme disclosed herein is omitted in preceding claims
Where face is not intended to abandon the body matter, also should not be considered as applicant and the theme is not thought of as to disclosed hair
A part of bright theme.
Claims (14)
1. a kind of pre-plastic package lead frame characterized by comprising multiple leadframes units, the leadframes unit is extremely
There is conducting element on the outermost side less, buried between the conducting element of the adjacent leadframes unit by pre-plastic package technique
Embedded with insulating layer, the insulating layer coats at least partly lateral wall of the conducting element.
2. pre-plastic package lead frame as described in claim 1, which is characterized in that the thickness of the insulating layer is less than the conduction
The thickness of element, the upper surface of the insulating layer is concordant with the upper surface of the conducting element, and the conducting element is located at described
Matcoveredn is formed on lateral wall below insulating layer.
3. pre-plastic package lead frame as claimed in claim 2, which is characterized in that the lower surface of the insulating layer and the conduction
Element, which is located between the lateral wall below the insulating layer, forms groove, and the groove is to the adjacent leadframes unit institute
The conducting element for including carries out chemical etching and obtains.
4. pre-plastic package lead frame as claimed in claim 3, which is characterized in that limit the outer of the conducting element of the groove
Side wall is face of slope structure, and the protective layer is formed in the face of slope structure.
5. pre-plastic package lead frame as described in claim 1, which is characterized in that the lower surface of the conducting element is switched to institute
The back side of leadframes unit is stated, the lower surface of the conducting element forms matcoveredn.
6. pre-plastic package lead frame as described in claim 1, which is characterized in that the insulating layer connects adjacent as connector
The leadframes unit.
7. pre-plastic package lead frame as described in claim 1 or 6, which is characterized in that the adjacent leadframes unit is led
The lateral wall of electric device is recessed inwardly to form card slot, and the lower end of the insulating layer extends outward to form protrusion, the protrusion insertion
The card slot.
8. pre-plastic package lead frame as described in claim 1, which is characterized in that the leadframes unit further includes that insulation is filled out
Layer is filled, and, through pre-plastic package technique potting in the insulation fill stratum and multiple metallic conduction posts independent of each other；Its
In, the metallic conduction post on the outermost side forms the conducting element.
9. a kind of semiconductor package characterized by comprising
Pre-plastic package lead frame as described in claim 1 to 8 any one；
Semiconductor chip corresponding with multiple leadframes units, the semiconductor chip and the corresponding pre-plastic package
Conducting element electrical connection in lead frame；
Plastic packaging layer, coat positive, the described insulating layer of the pre-plastic package lead frame upper surface and the semiconductor chip.
10. a kind of semiconductor packages unit characterized by comprising
Leadframes unit comprising: the lateral wall of conducting element on the outermost side, the conducting element passes through pre-plastic package work
Skill is formed with insulating layer, and the insulating layer coats at least partly lateral wall of the conducting element；
Semiconductor chip is electrically connected with the conducting element in the leadframes unit；
Plastic packaging layer, coat positive, the described insulating layer of the leadframes unit upper surface and the semiconductor chip.
11. a kind of method for packaging semiconductor characterized by comprising
Pre-plastic package lead frame as described in claim 1 to 8 any one is provided；
Chemical etching is carried out to the lower surface of the conducting element, keeps the lower surface of the insulating layer exposed, the conducting element
Lateral wall formed face of slope structure；
Protective layer is formed in the lower surface of the face of slope structure and the conducting element；
By semiconductor chip upside-down mounting to the front of the pre-plastic package lead frame, make the weld pad of the semiconductor core on piece with it is described
The pin of pre-plastic package lead frame is electrically connected to each other；
The front of the semiconductor chip and the pre-plastic package lead frame is coated comprehensively with insulating materials, forms plastic packaging layer,
Obtain semiconductor package.
12. method for packaging semiconductor as claimed in claim 11, which is characterized in that
In the step of providing pre-plastic package lead frame, the conducting element of the adjacent leadframes unit bypasses the insulating layer
Lower section be linked together；
In the step of carrying out chemical etching, chemical erosion is carried out to the part that the conducting element is located at the lower section of the insulating layer
It carves, so that the conducting element is ablated to around the part of the lower section of the insulating layer, and makes the lower surface of the insulating layer
Exposure.
13. method for packaging semiconductor as claimed in claim 11, which is characterized in that in the step of providing pre-plastic package lead frame
In, the leadframes unit further includes insulation fill stratum, and, through pre-plastic package technique potting in the insulation fill stratum
And multiple metallic conduction posts independent of each other；
Wherein, the metallic conduction post on the outermost side forms the conducting element, and the upper surface of the metallic conduction post connects
The front for passing to the leadframes unit forms the pin, and the lower surface of the metallic conduction post is switched to the lead frame
The lower surface at the back side of frame unit, all metallic conduction posts is each formed with the protective layer.
14. method for packaging semiconductor as claimed in claim 11, which is characterized in that after the step of forming plastic packaging layer, institute
State method further include: the Cutting Road between the adjacent leadframes unit cuts the insulating layer and the plastic packaging layer, makes
The semiconductor package separation is obtained, semiconductor packages unit is obtained.
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| CN201811244111.1A CN109256367B (en) | 2018-10-24 | 2018-10-24 | Pre-plastic package lead frame, semiconductor package structure, unit and package method thereof |
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| CN111106089A (en) * | 2019-11-29 | 2020-05-05 | 青岛歌尔微电子研究院有限公司 | High-density pin QFN packaging structure and method |
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| CN109256367B (en) | 2024-03-22 |
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