CN109244276A - Organic Light Emitting Diode drives backboard manufacturing method - Google Patents
Organic Light Emitting Diode drives backboard manufacturing method Download PDFInfo
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- CN109244276A CN109244276A CN201811039263.8A CN201811039263A CN109244276A CN 109244276 A CN109244276 A CN 109244276A CN 201811039263 A CN201811039263 A CN 201811039263A CN 109244276 A CN109244276 A CN 109244276A
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- setting steps
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
A kind of Organic Light Emitting Diode driving backboard manufacturing method, comprising: a colored filter setting steps, a buffer layer setting steps, monoxide semiconductor layer setting steps, a grid setting steps, a yellow light processing step, a plasma-based processing step, interbedded insulating layer setting steps, a source drain metal layer setting steps, a passivation layer setting steps, an Organic Light Emitting Diode setting steps and a cathode setting steps.Above-mentioned manufacturing method use colorized optical filtering on piece arrangement thin film transistor (TFT) technique, and by transparent oxide semiconductor layer directly as anode in the way of, reduce light shield quantity, effectively reduce material cost.
Description
Technical field
The invention relates to a kind of backboard manufacturing methods, especially with respect to a kind of Organic Light Emitting Diode (Organic
Light-Emitting Diode, OLED) driving backboard manufacturing method, used light shield quantity can be reduced, light shield is reduced
Cost, and then reduce the overall cost of Organic Light Emitting Diode driving backboard.
Background technique
Compared to liquid crystal display panel, organic LED display panel has high saturation, low power consumption, without backlight
A variety of advantages such as mould group, therefore it is increasingly becoming the mainstream technology in display panel field.
However, above-mentioned organic LED display panel is in the fabrication process, colored filter setting is in film crystalline substance
Processing procedure on body pipe array (Color Filter on Array, COF) need to use at least 13 light shields, cause manufacturing cost inclined
It is high.
Therefore, it is necessary to provide a kind of Organic Light Emitting Diode driving backboard manufacturing method, deposited with solving the prior art
The excessively high problem of cost.
Summary of the invention
The present inventor in view of existing Organic Light Emitting Diode driving backboard the excessively high disadvantage of manufacturing cost, for improvement
It is insufficient and missing, and then creates a kind of Organic Light Emitting Diode driving backboard manufacturing method.
Present invention is primarily aimed at a kind of Organic Light Emitting Diode driving backboard manufacturing method is provided, can reduce is made
Light shield quantity reduces light shield cost, and then reduces the overall cost of Organic Light Emitting Diode driving backboard.
In order to achieve the above object, the present invention provides a kind of Organic Light Emitting Diode driving backboard manufacturing method, comprising:
One colored filter setting steps, including a colored filter is made on a substrate, wherein the colorized optical filtering
The a part of piece as luminous zone；
One buffer layer setting steps, including one buffer layer of deposition is in the substrate and the colorized optical filtering on piece；
Monoxide semiconductor layer setting steps, including deposition monoxide semiconductor layer is on the buffer layer；
One grid setting steps, including one gate insulating layer of deposition is in the buffer layer and the oxide semiconductor layer
On, then deposit a gate metal layer on the gate insulating layer；
One yellow light processing step, including a photoresist layer is set in the gate metal layer, using one of yellow light described
Photoresist layer defines a figure, and the gate metal layer according to the Etching and the gate insulating layer；
One plasma-based processing step, including to the oxide exposed to except the gate insulating layer and the gate metal layer
The part of semiconductor layer carries out plasma-based processing to reduce the reduction of its resistance, and makes the part of the exposed oxide semiconductor layer
A N+ conductor layer is formed using as an anode；
Interbedded insulating layer setting steps, including interbedded insulating layer is deposited to the N+ conductor layer, the gate insulator
On layer and the gate metal layer, and two contact holes are formed on the interlayer insulating film；
On one source drain metal layer setting steps, including one source drain metal layer to the interlayer insulating film of deposition,
A source electrode and a drain electrode are made with the source drain metal layer, wherein the source electrode and the drain electrode are located at described two
In contact hole；
One passivation layer setting steps, including a passivation layer is deposited to the interlayer insulating film, the source electrode and the drain electrode
On, and the passivation layer is etched to form an active region, wherein the anode exposes in the active region；
One Organic Light Emitting Diode setting steps, including setting one Organic Light Emitting Diode into the active region described in
On anode；And
On one cathode setting steps, including setting one cathode to the active region, wherein cathode covering is described organic
Light emitting diode.
By above-mentioned technological means, the present invention includes following advantages:
1. the present invention arranges thin film transistor (TFT) (Thin film transistor (TFT) on using in colorized optical filtering on piece
Color filter (CF), TOC) technique, and by transparent oxide semiconductor layer directly as anode in the way of, by light shield
8-9 are reduced to, while reducing light shield cost, reduces the use of two layers of organic photoresist, effectively reduces material cost.
2. the anode can be manufactured with IGZTO.Since IGZTO serves not only as the anode material of organic light-emitting diode
Material also as the active layer material of TFT, therefore saves one of yellow light etch process of anode production.Meanwhile present invention eliminates
Traditional handicraft planarization layer and pixel defining layer two procedures, save three light shields, have not only reduced light shield cost, but also reduce
Material cost.
In an embodiment of the present invention, the colored filter setting steps include making a black square on the substrate
Battle array, the buffer layer setting steps include depositing the buffer layer in the substrate, the black matrix" and the colorized optical filtering
On piece.
In an embodiment of the present invention, the oxide semiconductor layer includes a metal oxide semiconductor layer, the gold
The material for belonging to oxide semiconductor layer is selected from the group being made of indium gallium zinc, indium oxide zinc-tin and indium gallium zinc-tin.
In an embodiment of the present invention, the metal oxide semiconductor layer with a thickness of
In an embodiment of the present invention, the gate insulating layer is made with Si oxide (SiOx) or silicon nitride (SiNx)
It makes,
In an embodiment of the present invention, the gate insulating layer is a plural layers.
In an embodiment of the present invention, the gate insulating layer thickness is
In an embodiment of the present invention, the gate metal layer is with molybdenum (Mo), aluminium (Al), copper (Cu), titanium (Ti) or its conjunction
Gold manufacture.
In an embodiment of the present invention, the gate metal layer with a thickness of
In an embodiment of the present invention, the interlayer insulating film is manufactured with SiOx or SiNx.
In an embodiment of the present invention, the interlayer insulating film is a plural layers.
In an embodiment of the present invention, the interlayer insulating film with a thickness of
In an embodiment of the present invention, the source drain metal layer is with molybdenum (Mo), aluminium (Al), copper (Cu), titanium (Ti), or
The manufacture of its alloy.
In an embodiment of the present invention, the source drain metal layer thickness is
In an embodiment of the present invention, the passivation layer is manufactured with SiOx or SiNx.
In an embodiment of the present invention, the passivation layer thickness is
In an embodiment of the present invention, the Organic Light Emitting Diode is set with evaporation process or ink-jet printing technique
It sets.
In an embodiment of the present invention, the Organic Light Emitting Diode is a white organic LED.
For above content of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly, Bing cooperates institute's accompanying drawings, makees
Detailed description are as follows:
Detailed description of the invention
Fig. 1 is that Organic Light Emitting Diode of the present invention drives corresponding to the colored filter setting steps of backboard manufacturing method
The side sectional view of Organic Light Emitting Diode driving backboard semi-finished product.
Fig. 2 is that Organic Light Emitting Diode of the present invention drives the buffer layer setting steps of backboard manufacturing method and oxide partly to lead
The side sectional view of the driving backboard semi-finished product of Organic Light Emitting Diode corresponding to body layer setting steps.
Fig. 3 is that Organic Light Emitting Diode of the present invention drives organic hair corresponding to the grid setting steps of backboard manufacturing method
The side sectional view of optical diode driving backboard semi-finished product.
Fig. 4 is that Organic Light Emitting Diode of the present invention drives organic hair corresponding to the yellow light processing step of backboard manufacturing method
Optical diode drives the side sectional view of backboard semi-finished product, wherein a photoresist layer is arranged in the gate metal layer.
Fig. 5 is the yellow light processing step and plasma-based processing step that Organic Light Emitting Diode of the present invention drives backboard manufacturing method
The side sectional view of corresponding Organic Light Emitting Diode driving backboard semi-finished product, wherein the grid according to an Etching is golden
Belong to layer and the gate insulating layer.
Fig. 6 is that Organic Light Emitting Diode of the present invention drives corresponding to the interlayer insulating film setting steps of backboard manufacturing method
The side sectional view of Organic Light Emitting Diode driving backboard semi-finished product.
Fig. 7 drives the source drain metal layer setting steps of backboard manufacturing method right for Organic Light Emitting Diode of the present invention
The side sectional view for the Organic Light Emitting Diode driving backboard semi-finished product answered.
Fig. 8 is organic corresponding to the passivation layer setting steps of Organic Light Emitting Diode of the present invention driving backboard manufacturing method
The side sectional view of light emitting diode driving backboard semi-finished product.
Fig. 9 drives the Organic Light Emitting Diode setting steps of backboard manufacturing method right for Organic Light Emitting Diode of the present invention
The side sectional view for the Organic Light Emitting Diode driving backboard semi-finished product answered.
Figure 10 is organic corresponding to the cathode setting steps of Organic Light Emitting Diode of the present invention driving backboard manufacturing method
The side sectional view of light emitting diode driving backboard semi-finished product.
Figure 11 is the step flow chart that Organic Light Emitting Diode of the present invention drives backboard manufacturing method.
Figure 12 be Organic Light Emitting Diode of the present invention drive backboard manufacturing method step flow chart, wherein the step of be connect
The step of continuous Figure 11.
Specific embodiment
Please refer to Figure 11 and Figure 12, Organic Light Emitting Diode of the present invention (Organic Light-Emitting Diode,
OLED) driving backboard manufacturing method includes: a colored filter (Color Filter) setting steps S01, buffer layer setting
Step S02, monoxide semiconductor layer setting steps S03, a grid setting steps S04, a yellow light processing step S05, an electricity
Slurry processing step S06, interbedded insulating layer setting steps S07, a source drain metal layer setting steps S08, a passivation layer are set
Set step S09, an Organic Light Emitting Diode setting steps S10 and a cathode setting steps S11.
Fig. 1 is please referred to, the colored filter setting steps S01 includes making a colored filter on a substrate SB
CF, wherein a part of the colored filter CF as luminous zone.The substrate SB is a glass substrate.In the execution step
When rapid, the production that the substrate SB just carries out colored filter CF can be first cleaned.In an embodiment of the present invention, the colored filter
Mating plate setting steps S01 includes making a black matrix" (Black Matrix) BM on the substrate.The black matrix" BM
On the one hand colored filter CF light leakage and colour mixture are prevented, still further aspect can be used for for thin film transistor (TFT) (Thin Film
Transistor, TFT) shading.
Referring to figure 2., the buffer layer setting steps S02 includes one buffer layer BF of deposition in the substrate SB and the coloured silk
On colo(u)r filter CF.In an embodiment of the present invention, the buffer layer setting steps S02 includes depositing the buffer layer described
On substrate, the black matrix" BM and the colored filter CF.
The oxide semiconductor layer setting steps S03 includes deposition monoxide semiconductor layer OX in the buffer layer BF
On.
Referring to figure 3., the grid setting steps S04 includes one gate insulating layer GI of deposition in the buffer layer BF and institute
It states on oxide semiconductor layer OX, then deposits a gate metal layer GE on the gate insulating layer GI.It is real in the present invention one
It applies in example, the gate insulating layer GI is manufactured with Si oxide (SiOx) or silicon nitride (SiNx).Alternatively, the gate insulator
Layer GI is a plural layers.The gate insulating layer GI with a thickness ofIn an embodiment of the present invention, the grid
Pole metal layer GE is with the manufacture of molybdenum (Mo), aluminium (Al), copper (Cu), titanium (Ti) or its alloy.The gate metal layer GE with a thickness of
Referring to figure 4. and Fig. 5, the yellow light processing step S05 include one photoresist layer PR of setting in the gate metal layer
On GE, a figure, and the gate metal layer according to the Etching are defined in the photoresist layer PR using one of yellow light
The GE and gate insulating layer GI.
The plasma-based processing step S06 includes to exposing to except the gate insulating layer GI and gate metal layer GE
The part of oxide semiconductor layer OX carry out plasma-based and handle to reduce its resistance, and make the exposed oxide semiconductor layer
The part of OX forms a N+ conductor layer N using as an anode.The part of anode below the gate insulating layer GI not by
Plasma-based handles and keeps characteristic of semiconductor, and as a channel TFT.In addition, the oxide semiconductor layer OX includes a metal
The material of oxide semiconductor layer, the metal oxide semiconductor layer is selected from by indium gallium zinc, indium oxide zinc-tin and oxidation
The group that indium gallium zinc-tin is constituted.The metal oxide semiconductor layer OX with a thickness of
Fig. 6 is please referred to, the interlayer insulating film setting steps S07 includes deposition interbedded insulating layer IL (Interlayer
Dielectric, ILD) on the N+ conductor layer N, the gate insulating layer GI and the gate metal layer GE, and described
Two contact hole H are formed on interlayer insulating film IL.In an embodiment of the present invention, the interlayer insulating film IL is with Si oxide
(SiOx) or silicon nitride (SiNx) manufactures.Alternatively, the interlayer insulating film IL is a plural layers.The interlayer insulating film IL
With a thickness of
Fig. 7 is please referred to, the source drain metal layer setting steps S08 includes one source drain metal layer of deposition described in
On interlayer insulating film IL, the drain electrode of a source electrode (Source Electrode) S and one is made with the source drain metal layer
(Drain Electrode) D, wherein the source S and the drain D are located in the two contact holes H.In the present invention one
In embodiment, the source drain metal layer is with the manufacture of molybdenum (Mo), aluminium (Al), copper (Cu), titanium (Ti) or its alloy.The source
Pole drain metal layer with a thickness of
Fig. 8 is please referred to, the passivation layer setting steps S09 includes that deposition one is passivated (Passivation, PV) layer PV to institute
It states in interlayer insulating film (Inter Layer Dielectric) IL, the source S and described drain D, and etches the passivation
Layer PV is to form an active region (Active Area), wherein the anode exposes in the active region.Implement in the present invention one
In example, the passivation layer PV is manufactured with Si oxide (SiOx) or silicon nitride (SiNx).The passivation layer PV with a thickness of
Fig. 9 is please referred to, the Organic Light Emitting Diode setting steps S10 includes that an Organic Light Emitting Diode OL is arranged to institute
It states on the anode in active region.
Figure 10 is please referred to, the cathode setting steps S11 includes on one cathode CA to the active region of setting, wherein described
Cathode CA covers the Organic Light Emitting Diode OL.The Organic Light Emitting Diode OL can be a white organic LED
OL.In addition, the Organic Light Emitting Diode OL can be arranged with evaporation process or ink-jet printing technique.
By above-mentioned technological means, the present invention includes following advantages:
1. the present invention is using arrangement thin film transistor (TFT) (the Thin film transistor (TFT) on colored filter CF
On Color filter (CF), TOC) technique, and by transparent oxide semiconductor layer OX directly as anode in the way of,
Light shield is reduced to 8-9, while reducing light shield cost, reduces the use of two layers of organic photoresist, effectively reduces material
Cost.
2. the anode can be manufactured with IGZTO, since IGZTO serves not only as the luminous anode material of Organic Light Emitting Diode OL
Material also as the active layer material of TFT, therefore saves one of yellow light etch process of anode production.Meanwhile present invention eliminates
Traditional handicraft planarization layer and pixel defining layer two procedures, save three light shields, have not only reduced light shield cost, but also reduce
Material cost.
3. the black matrix" BM both plays isolation colored filter CF leakage in the embodiment of setting black matrix" BM
Optical issue, also light shield layer as TFT simultaneously, reduces the production of light shield layer (Light Shielding Layer).
Claims (10)
1. a kind of Organic Light Emitting Diode drives backboard manufacturing method, which is characterized in that the described method includes:
One colored filter setting steps, including a colored filter is made on a substrate, wherein the colored filter is made
For a part of luminous zone；
One buffer layer setting steps, including one buffer layer of deposition is in the substrate and the colorized optical filtering on piece；
Monoxide semiconductor layer setting steps, including deposition monoxide semiconductor layer is on the buffer layer；
One grid setting steps, including one gate insulating layer of deposition connect on the buffer layer and the oxide semiconductor layer
Deposition one gate metal layer on the gate insulating layer；
One yellow light processing step, including a photoresist layer is set in the gate metal layer, using one of yellow light in the photoresist
Layer defines a figure, and the gate metal layer according to the Etching and the gate insulating layer；
One plasma-based processing step, including partly being led to the oxide exposed to except the gate insulating layer and the gate metal layer
The part of body layer carries out plasma-based and handles to reduce its resistance, and the part of the exposed oxide semiconductor layer is made to form a N+
Conductor layer is using as an anode；
Interbedded insulating layer setting steps, including deposition interbedded insulating layer to the N+ conductor layer, the gate insulating layer and
In the gate metal layer, and two contact holes are formed on the interlayer insulating film；
On one source drain metal layer setting steps, including one source drain metal layer to the interlayer insulating film of deposition, with institute
It states source drain metal layer and makes a source electrode and a drain electrode, wherein the source electrode and the drain electrode are located at two contact
In hole；
On one passivation layer setting steps, including deposition one passivation layer to the interlayer insulating film, the source electrode and the drain electrode, and
The passivation layer is etched to form an active region, wherein the anode exposes in the active region；
One Organic Light Emitting Diode setting steps, including setting one organic light-emitting diode element into the active region described in
On anode；And
On one cathode setting steps, including setting one cathode to the active region, wherein the cathode covers the organic light emission
Diode element.
2. the method as described in claim 1, it is characterised in that: the colored filter setting steps include on the substrate
Make a black matrix", the buffer layer setting steps include deposit the buffer layer the substrate, the black matrix" and
The colorized optical filtering on piece.
3. the method as described in claim 1, it is characterised in that: the oxide semiconductor layer includes that a metal oxide is partly led
The material of body layer, the metal oxide semiconductor layer is selected from by indium gallium zinc, indium oxide zinc-tin and indium gallium zinc-tin structure
At group.
4. the method as described in claim 1, it is characterised in that: the oxide semiconductor layer with a thickness of
5. the method as described in claim 1, it is characterised in that: the gate insulating layer is nitrogenized with Si oxide (SiOx) or silicon
Object (SiNx) manufacture.
6. the method as described in claim 1, it is characterised in that: the gate insulating layer is a plural layers.
7. the method as described in claim 1, it is characterised in that: the gate insulating layer thickness is
8. the method as described in claim 1, it is characterised in that: the gate metal layer with molybdenum (Mo), aluminium (Al), copper (Cu),
Titanium (Ti) or the manufacture of its alloy.
9. the method as described in claim 1, it is characterised in that: the gate metal layer with a thickness of
10. the method as described in claim 1, it is characterised in that: the interlayer insulating film is manufactured with SiOx or SiNx.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811039263.8A CN109244276A (en) | 2018-09-06 | 2018-09-06 | Organic Light Emitting Diode drives backboard manufacturing method |
| PCT/CN2018/107927 WO2020047916A1 (en) | 2018-09-06 | 2018-09-27 | Method for manufacturing organic light-emitting diode drive backplate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811039263.8A CN109244276A (en) | 2018-09-06 | 2018-09-06 | Organic Light Emitting Diode drives backboard manufacturing method |
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| CN201811039263.8A Pending CN109244276A (en) | 2018-09-06 | 2018-09-06 | Organic Light Emitting Diode drives backboard manufacturing method |
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| WO (1) | WO2020047916A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817578A (en) * | 2019-02-27 | 2019-05-28 | 深圳市华星光电半导体显示技术有限公司 | The production method of Organic Light Emitting Diode backboard |
| WO2023178764A1 (en) * | 2022-03-24 | 2023-09-28 | 深圳市华星光电半导体显示技术有限公司 | Oled display panel and manufacturing method therefor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230102457A (en) * | 2021-12-30 | 2023-07-07 | 엘지디스플레이 주식회사 | Organic light emitting display device and organic light emitting display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107293555A (en) * | 2017-06-19 | 2017-10-24 | 深圳市华星光电技术有限公司 | The preparation method and its structure of bottom emitting type white light OLED panel |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293554A (en) * | 2017-06-19 | 2017-10-24 | 深圳市华星光电技术有限公司 | The preparation method and its structure of top-emitting OLED panel |
| CN107680993B (en) * | 2017-10-23 | 2019-12-24 | 深圳市华星光电半导体显示技术有限公司 | OLED panel and manufacturing method thereof |
| CN107946345B (en) * | 2017-11-22 | 2020-12-11 | 京东方科技集团股份有限公司 | Color film substrate, preparation method thereof and display device |
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2018
- 2018-09-06 CN CN201811039263.8A patent/CN109244276A/en active Pending
- 2018-09-27 WO PCT/CN2018/107927 patent/WO2020047916A1/en active Application Filing
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293555A (en) * | 2017-06-19 | 2017-10-24 | 深圳市华星光电技术有限公司 | The preparation method and its structure of bottom emitting type white light OLED panel |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817578A (en) * | 2019-02-27 | 2019-05-28 | 深圳市华星光电半导体显示技术有限公司 | The production method of Organic Light Emitting Diode backboard |
| WO2020172996A1 (en) * | 2019-02-27 | 2020-09-03 | 深圳市华星光电半导体显示技术有限公司 | Fabrication method for organic light-emitting diode backplane |
| WO2023178764A1 (en) * | 2022-03-24 | 2023-09-28 | 深圳市华星光电半导体显示技术有限公司 | Oled display panel and manufacturing method therefor |
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Application publication date: 20190118 |