CN109225086A - 微流道装置的制造方法和微流道装置 - Google Patents
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Abstract
一种微流道装置的制造方法和微流道装置，所述方法先提供一以玻璃材质制成的模具，该模具具有一中空模穴以及围绕该中空模穴的一挡墙；再使该模具设置于一硅基板，该硅基板具有一对应该中空模穴的成形面以及一凸出于该成形面的微流道阳模；接着将聚二甲基硅氧烷倒至该中空模穴，并进行烘烤，以使该聚二甲基硅氧烷硬化成一微流道装置，该微流道装置具有一对应于该微流道阳模的微流道结构，且该微流道装置的侧壁高度介于3毫米至30毫米之间。由于该模具的材质为玻璃，可以制造出侧壁高度大于3毫米的微流道装置，因此可以防止负压吸力不足的问题。
Description
技术领域
本发明为涉及一种微流道装置，尤指一种微流道装置的制造方法及其结构。
背景技术
随着半导体技术与生物技术的蓬勃发展，结合微结构的制造技术与生医检测技术而发展出的微流道反应器，是提高反应产物品质和提高过程效率的重要技术手段，并已被广泛的应用于化工、材料及制药等领域，是相关领域中的必备用品。
而微流道的应用如中国台湾专利公告第I421340号的“微流道晶片及其使用方法”，其包括有一基材以及至少一组织培养区，该基材具有一表面，该至少一组织培养区，形成于该基材的表面，且该组织培养区具有一微流道，其是由多个具有一预定深度的几何形结构所连接形成，该微流道具有分别位于该微流道的两端的一输入口与一输出口，且该微流道底部开设有至少一气体交换孔。
又由于聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)具有良好的光学穿透性、生物相容性高以及化学性质稳定等优点，已广泛的被用来做为微流道的基材，然而，以现在的厚模光阻或是干模技术都难以使制得的聚二甲基硅氧烷的侧壁高度高于一足以产生充足负压的高度，而运用压克力作为制造模具时，由于压克力于多次烘烤后会产生形变，并因为热膨胀系数等关系，而使得聚二甲基硅氧烷溢流，故无法达成小线宽流道的需求及脱模快速的重复性工业生产需求。尤其是负压型的聚二甲基硅氧烷微流道的侧壁高度如果低于该足以产生充足负压的高度，将会造成负压吸力不足而使得应用受到很大的限制，且无法充分发挥出微流道的原本设计优点，因此，如何制作出一种具有足以产生充足负压的高度的聚二甲基硅氧烷微流道，实为相关业者所面临的课题。
发明内容
本发明的主要目的，在于解决聚二甲基硅氧烷微流道的侧壁高度不足，而导致负压吸力不足的问题。
为达上述目的，本发明提供一种微流道装置的制造方法，包含有以下步骤：
S1：提供一由玻璃材质制成的模具，该模具具有一中空模穴以及围绕该中空模穴的一挡墙，该挡墙具有一不低于3毫米的高度；
S2：将该模具设置于一硅基板上，该硅基板具有一对应该中空模穴的成形面以及一凸出于该成形面的微流道阳模；
S3：倒入一未硬化的聚二甲基硅氧烷至该中空模穴，并进行烘烤，以使该聚二甲基硅氧烷硬化成一微流道装置；以及
S4：将该微流道装置脱离该中空模穴与该硅基板，该微流道装置具有一对应于该微流道阳模的微流道结构，且该微流道装置的侧壁高度介于3毫米至30毫米之间。
为达上述目的，本发明更提供一种由前述方法制成的微流道装置。
于本发明一实施例中，该模具的该中空模穴的至少一边角经一圆滑处理而成为一圆滑角。
于本发明一实施例中，于步骤S2之后，涂布一脱模剂于该中空模穴与该成形面上。
综上所述，本发明相较于先前技术所具有的优点在于：
(1)本发明中，由于该模具的材质为玻璃，其热膨胀系数与该硅基板接近、该模具与该硅基板的表面平整度高、于多次加热烘烤后不会产生形变，故可以防止该聚二甲基硅氧烷于加热烘烤时溢流，而减少后续修整的工作。
(2)本发明中，通过玻璃材质的该模具可以制造出侧壁高度大于一足以产生充足负压的高度的微流道装置，故在结构设计上，可达成更深的垂直流道，因而可产生更强的负压，防止负压吸力不足的问题。
(3)本发明中，由于该模具的该中空模穴的至少一边角经一圆滑处理而成为一圆滑角，故经该模具所制得的该微流道装置亦相对应地具有圆滑角，并搭配脱膜剂的使用，有利于后续脱膜作业，不仅可提高脱模的速度、增加制造速度，并可避免该微流道装置破损。
附图说明
图1为本发明一实施例的步骤流程示意图。
图2为本发明一实施例的模具平面示意图。
图3A～图3F为图2中A-A剖面的制作流程示意图。
图4为本发明一实施例的成品示意图。
具体实施方式
涉及本发明的详细说明及技术内容，现就配合图式说明如下：
请参阅图1至图4所示，本发明为一种微流道装置的制造方法及其结构，该微流道装置40具有一微流道结构41且其侧壁高度介于3毫米至30毫米之间，而其制造方法包含有以下步骤：
S1：如图3A所示，提供一模具10，该模具10是由玻璃材质制成，且具有一中空模穴11以及围绕该中空模穴11的一挡墙12，且该挡墙12具有一不低于3毫米的高度h。
而于其中，该模具的制造方法可以为利用激光加工的方式，来对玻璃进行加工而形成该模具10，以使该模具10具有该中空模穴11以及围绕该中空模穴11的该挡墙12，但该模具10的制造方法也可以使用其他方式，不以激光加工的方式为限。而后，也可以如图2所示，对该中空模穴11的至少一边角作一圆滑处理，而形成一圆滑角13，然为了后续脱模作业顺利进行，也可视情况对多个边角进行该圆滑处理以形成多个圆滑角13。本发明一实施例中，该圆滑处理为一激光加工法，然其他方法亦适用于本发明中而无特别限制。
S2：如图3B至图3D所示，将该模具10设置于一硅基板20上，该硅基板20具有一对应该中空模穴11的成形面21以及一凸出于该成形面21的微流道阳模22。本发明中所使用的硅基板20举例可为硅晶圆，然其他适合的含硅基板亦可应用于本发明中而没有特别的限制。
本发明一实施例中，该模具10是与该硅基板20直接接触。更具体地，举例来说，是通过一阳极接合法令该模具10与该硅基板20之间产生一键结而结合，故在本发明中不需要如现有技术般地在该模具10与该硅基板20之间另外通过如粘着剂的材料来形成一粘着层，避免现有技术中因使用粘着剂而可能产生的溢胶问题，也避免了该粘着层可能影响该模具10与该硅基板20的对齐精准性的缺陷。
至于该硅基板20的制作方法，如图3B及图3C所示，于该硅基板20的该成形面21上形成一图形化光阻遮罩50，再对该硅基板20进行蚀刻，而于该硅基板20上形成该微流道阳模22，最后，再移除该图形化光阻遮罩50即可，而形成该微流道阳模22的技术手段不以此为限。此外，该硅基板20可以于制造开始前就先行制作好，且该模具10与该硅基板20的制作顺序亦不限于该模具10先、该硅基板20后。
于步骤S2之后更包含有下列步骤：
S2A：涂布一脱模剂(图未示)于该中空模穴11与该成形面21上，以利于后续脱模，而该脱模剂可以为氟系列脱模剂、蜡系列脱模剂、表面活性剂、及其组合等等，然本领域具有通常知识者可视情况选用而没有限制。
S3：如图3E所示，倒入一未硬化的聚二甲基硅氧烷30至该中空模穴11，并进行烘烤，以使该聚二甲基硅氧烷30硬化成一微流道装置40(示于图3F)，而于此步骤中，更包含有下列步骤：
S3A：先制作该聚二甲基硅氧烷30，将一高分子材料与一硬化剂混合形成该聚二甲基硅氧烷30，并静置约10至30分钟，以先去除部分气泡，且该高分子材料与该硬化剂的重量比例介于8比1至12比1之间，但不以此为限。本发明一实施例中，该高分子材料可为一聚硅氧烷，而该硬化剂举例可为脂肪胺、脂环胺、芳香胺、聚酰胺等等，但不以此为限。
S3B：倒入未硬化的该聚二甲基硅氧烷30至该中空模穴11内，并将其置于负压的环境下，直到该聚二甲基硅氧烷30内的气泡浮出并破裂。
S3C：接着，烘烤以硬化该聚二甲基硅氧烷30而形成该微流道装置40。于一实施例中，可在100℃至120℃的温度下进行烘烤，而烘烤时间介于半小时至两小时之间，而烘烤温度及烘烤时间会随各个制造而有所不同，不以此为限。
S4：如图3F及图4所示，将该微流道装置40脱离该中空模穴11与该硅基板20，且该微流道装置40具有一对应于该微流道阳模22的微流道结构41，而由于该模具10与该硅基板20的表面平整度高且热膨胀系数接近、于多次加热烘烤后不会产生形变，使得未硬化的该聚二甲基硅氧烷30在加热的过程中不会溢流，而可减少后续修整的工作。再者，经实际测试发现：根据本发明的方法所制得的侧壁高度为4毫米的微流道装置40仅需3分钟即可将10μm的液体吸入该微流道装置40的腔体中；然而，当以侧壁高度为2毫米的微流道装置40进行相同测试时，则得耗时6分钟方能将相同量的液体吸入其腔体中。
综合来说，经由本发明的方法制造以及所制得的微流道装置，相较于现有技术及经现有技术所制得的微流道而言，至少具有以下优点：
(1)本发明中，由于该模具的材质为玻璃，其热膨胀系数与该硅基板接近、该模具与该硅基板的表面平整度高、于多次加热烘烤后不会产生形变，故可以防止该聚二甲基硅氧烷于加热烘烤时溢流，而减少后续修整的工作。
(2)本发明中，通过玻璃材质的该模具可以制造出侧壁高度大于一足以产生充足负压的高度的微流道装置，故在结构设计上，可达成更深的垂直流道，因而可产生更强的负压，防止负压吸力不足的问题。
(3)本发明中，通过涂布该脱模剂，可利于后续脱模，以提高脱模的速度、增加制造速度，并可避免该微流道装置破损。
(4)本发明中，由于该模具的该中空模穴的至少一边角经一圆滑处理而成为一圆滑角，故经该模具所制得的该微流道装置也相对应地具有圆滑角，并搭配脱膜剂的使用，有利于后续脱膜作业，不仅可提高脱模的速度、增加制造速度，并可避免该微流道装置破损。
Claims (10)
1.一种微流道装置的制造方法，其特征在于，所述方法包含有以下步骤：
步骤S1：提供一由玻璃材质制成的模具，所述模具具有一中空模穴以及围绕所述中空模穴的一挡墙，所述挡墙具有一不低于3毫米的高度；
步骤S2：将所述模具设置于一硅基板上，所述硅基板具有一对应所述中空模穴的成形面和一凸出于所述成形面的微流道阳模；
步骤S3：将一未硬化的聚二甲基硅氧烷倒入至所述中空模穴，并进行烘烤，以使所述聚二甲基硅氧烷硬化成一微流道装置；以及
步骤S4：使所述微流道装置脱离所述中空模穴与所述硅基板，所述微流道装置具有一对应于所述微流道阳模的微流道结构，且所述微流道装置的侧壁高度介于3毫米至30毫米之间。
2.根据权利要求1所述的微流道装置的制造方法，其特征在于，所述硅基板的制备包含以下步骤：
在所述硅基板的所述成形面上形成一图形化光阻遮罩，再对所述硅基板进行蚀刻，而在所述硅基板上形成所述微流道阳模；以及
移除所述图形化光阻遮罩。
3.根据权利要求1所述的微流道装置的制造方法，其特征在于，在所述步骤S2之后，还包含有以下步骤：
步骤S2A：在所述中空模穴与所述成形面上涂布一脱模剂，所述脱模剂选自于由氟系列脱模剂、蜡系列脱模剂、表面活性剂、以及它们的组合所组成的群组。
4.根据权利要求1所述的微流道装置的制造方法，其特征在于，在所述步骤S3之中，还包含有以下步骤：
步骤S3A：将一高分子材料与一硬化剂混合形成所述聚二甲基硅氧烷，所述高分子材料与所述硬化剂的重量比例介于8比1至12比1之间；
步骤S3B：将未硬化的所述聚二甲基硅氧烷倒入至所述中空模穴内，并置于负压的环境下，使所述聚二甲基硅氧烷内的气泡浮出并破裂；以及
步骤S3C：烘烤以硬化所述聚二甲基硅氧烷而形成所述微流道装置。
5.根据权利要求4所述的微流道装置的制造方法，其特征在于，所述高分子材料为一聚硅氧烷。
6.根据权利要求1所述的微流道装置的制造方法，其特征在于，所述模具与所述硅基板直接接触。
7.根据权利要求1所述的微流道装置的制造方法，其特征在于，通过一阳极接合法而使所述模具与所述硅基板之间产生一键结而结合。
8.根据权利要求1所述的微流道装置的制造方法，其特征在于，所述模具的所述中空模穴的至少一边角经一圆滑处理而成为一圆滑角。
9.根据权利要求8所述的微流道装置的制造方法，其特征在于，通过一激光加工法进行所述圆滑处理。
10.一种微流道装置，其特征在于，所述微流道装置是使用根据权利要求1至9中任一项所述的方法制成的。
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